CN107808838A - Drycorrosion apparatus and dry etching method - Google Patents
Drycorrosion apparatus and dry etching method Download PDFInfo
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- CN107808838A CN107808838A CN201711115335.8A CN201711115335A CN107808838A CN 107808838 A CN107808838 A CN 107808838A CN 201711115335 A CN201711115335 A CN 201711115335A CN 107808838 A CN107808838 A CN 107808838A
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- dry etching
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- 238000000034 method Methods 0.000 title claims abstract description 237
- 238000001312 dry etching Methods 0.000 title claims abstract description 48
- 238000012545 processing Methods 0.000 claims abstract description 200
- 238000011112 process operation Methods 0.000 claims abstract description 8
- 238000012544 monitoring process Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 16
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- 238000009530 blood pressure measurement Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 10
- 238000009434 installation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- LNDHQUDDOUZKQV-UHFFFAOYSA-J molybdenum tetrafluoride Chemical compound F[Mo](F)(F)F LNDHQUDDOUZKQV-UHFFFAOYSA-J 0.000 description 1
- PDKHNCYLMVRIFV-UHFFFAOYSA-H molybdenum;hexachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mo] PDKHNCYLMVRIFV-UHFFFAOYSA-H 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Drycorrosion apparatus, including processing procedure chamber, gas deflation assembly and manometric module, processing procedure chamber carries out dry etching process operations to treat processing assembly, gas deflation assembly is to discharge caused processing procedure product in dry etching processing procedure, and manometric module is to the pressure in monitoring processing procedure chamber in real time；The manometric module is arranged on processing procedure chamber, and the Drycorrosion apparatus also includes the sleeve pipe for being arranged on the junction of the manometric module and the processing procedure chamber, and described sleeve pipe is preventing that caused processing procedure product is flowed into manometric module in dry etching processing procedure.The Drycorrosion apparatus of the present invention, processing procedure product is trapped by sleeve pipe and flows into manometric module, the problems such as null offset, maintenance period is short, the cost of overhaul is high occurs so as to avoid manometric module from being influenceed by processing procedure product；And manometric module from being gone on gas deflation assembly on processing procedure chamber, reduce processing procedure product and deposit influence to manometric module.In addition, the invention also discloses a kind of dry etching method.
Description
Technical field
The present invention relates to the processing procedure manufacture field of display panel, more particularly to a kind of Drycorrosion apparatus and dry etching side
Method.
Background technology
At present, in low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) and organic light-emitting diodes
Manage (Organic Light-Emitting Diode, OLED) technique in, the gate line (being commonly called as gate electrode) of metal material and
Source/drain polar curve (Source-Drain line, is commonly called as gate electrode or source-drain electrode), and its film layer structure is usually molybdenum (Mo), titanium
(Ti), the individual layer or sandwich construction that at least one of material such as aluminium (Al) is formed.And in order to reach high-resolution products institute
Defined line width loss requirement, the pattern on light shield is transferred to the film layer structure of metal material usually using dry etch process
On, so as to process the gate line of above-mentioned metal material and source/drain polar curve equisignal line.
Because dry etch process processing procedure can produce substantial amounts of molybdenum fluoride (MoFx), molybdenum chloride (MoClx), aluminium chloride
(AlClx), the processing procedure product of the metallic salt such as titanium chloride (TiClx), and in existing dry etching machine equipment, its pressure measurement group
Part (such as to monitor the vacuum meter of the pressure of processing procedure intracavitary) lacks the safeguard procedures for such processing procedure product, is easy to
Influenceed by the processing procedure product and problems with occur：Generation null offset, maintenance period is short, the cost of overhaul is high etc..
The content of the invention
The embodiment of the present invention provides a kind of new Drycorrosion apparatus and method, and it can be prevented on existing Drycorrosion apparatus
The manometric modules such as vacuum meter are influenceed by processing procedure product, and so as to avoid the occurrence of null offset, maintenance period is short, the cost of overhaul is high
The problems such as.
In a first aspect, first embodiment of the invention provides a kind of Drycorrosion apparatus, including processing procedure chamber, an at least exhaust group
Part and at least a manometric module, the processing procedure chamber houses component to be processed, and carries out dry etching system to the component to be processed
Cheng Zuoye, the gas deflation assembly are connected to the processing procedure chamber, described to discharge caused processing procedure product in dry etching processing procedure
Manometric module the installation site of manometric module, is transferred to monitor the pressure in the processing procedure chamber in real time from gas deflation assembly
On processing procedure chamber, influence of the processing procedure product deposition to manometric module is reduced；Also wrapped on the processing procedure cavity wall of the Drycorrosion apparatus
Sleeve is included, described sleeve pipe is arranged at the junction of the manometric module and the processing procedure chamber, and is connected with the processing procedure chamber,
Described sleeve pipe prevents the caused processing procedure in dry etching processing procedure to trap the processing procedure product that processing procedure chamber flows to manometric module
Product is flowed into the manometric module.
Wherein, described sleeve pipe forms hackly inwall by way of sandblasting or plated film, and described sleeve pipe passes through thick
Rough uneven inwall traps the processing procedure product that process chamber flows to manometric module, reduces the processing procedure product to greatest extent
Flow into the manometric module.Sleeve pipe is easily installed and dismantled, and can be carried out together with processing procedure intracavitary portion miscellaneous part periodically
Cleaning and maintenance.
Wherein, the inwall of described sleeve pipe forms groove and/or projection to increase the roughness of described sleeve pipe, and by described
The groove and/or projection that inwall is formed trap the processing procedure product.
Wherein, in the side wall of the processing procedure chamber through offering measured hole, the manometric module by the measured hole with
The processing procedure chamber is connected, and described sleeve pipe is detachably arranged in the measured hole.
Wherein, described sleeve pipe from the inwall side of the processing procedure chamber be arranged on the measured hole in, and with the processing procedure chamber
Interior other parts are fixedly connected.
Wherein, described sleeve pipe includes body and flange, and the body is held in the measured hole, the flange along
The radial convex of the body is located at one end of the body, and supports on the inwall of the measurement bore edges.
Wherein, the manometric module includes vacuum meter and air valve, and the vacuum meter is connected to the processing procedure by pipeline
Chamber, the air valve are arranged on the pipeline between the vacuum meter and the processing procedure chamber, to control the vacuum meter with it is described
The conducting and cut-off of pipeline between processing procedure chamber.
Wherein, the processing procedure chamber has steam vent, and the gas deflation assembly includes vavuum pump and valve, and the vavuum pump leads to
To cross pipeline and be connected to the steam vent, the valve is arranged on the pipeline between the steam vent and the vavuum pump, to
Control the conducting and cut-off of the pipeline between the vavuum pump and the steam vent.
Wherein, the processing procedure chamber includes cavity, the Top electrode being arranged above the cavity and is arranged at the cavity
The etching gas being passed through in the cavity are changed into plasma by the bottom electrode of lower section, the Top electrode with the bottom electrode
(plasma-based), the plasma are reacted with the component to be processed, complete dry etching processing procedure.
Another method, the present invention also provide a kind of dry etching method, and it treats processing assembly by the Drycorrosion apparatus
Dry etching is carried out, the dry etching method comprises the following steps：
The cavity of the Drycorrosion apparatus is sealed, and the cavity is lined up vacuum by the gas deflation assembly of the Drycorrosion apparatus
State；
Etching gas are passed through in the cavity, the manometric module of the Drycorrosion apparatus detects the processing procedure in the cavity
Whether condition is up to standard；
When the process conditions that the manometric module measures are up to standard, the Top electrode in the cavity is powered with bottom electrode, makes
Etching gas in cavity form plasmoid (plasma-based state), and the ion, active atomic group or molecule in plasma-based are free
Base treats processing assembly and carries out Ions Bombardment and chemical reaction, realizes dry etching process operations；
After the completion of dry etching processing procedure, the gas deflation assembly is by processing procedure product caused by dry etching processing procedure from the cavity
Interior discharge.
In summary, the middle Drycorrosion apparatus provided according to embodiments of the present invention and method, are set in the measured hole
There is sleeve pipe, and the product that will flow into the manometric module is caught by described sleeve pipe, so as to avoid existing manometric module
Influenceed by processing procedure product and the problems such as null offset, maintenance period is short, the cost of overhaul is high occur.In addition, the present invention's is dry
In etching device, relatively existing Drycorrosion apparatus, the installation site of its manometric module switchs to be mounted directly from gas deflation assembly
On the processing procedure chamber, following beneficial effect is brought：1st, the sensitivity of the manometric module monitoring is added；2nd, the pressure measurement
The temperature of component changes with the temperature change of the processing procedure chamber, will not because of the manometric module temperature it is relatively low and cause
The product is deposited in the manometric module, finally influences the measurement accuracy of the manometric module；3rd, the survey is shortened
The path between component and the processing procedure chamber is pressed, so as to reduce the pipe being deposited between the manometric module and the processing procedure chamber
The product on road, also reduce influence of the product to the manometric module precision.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of Drycorrosion apparatus provided in an embodiment of the present invention.
Fig. 2 is the schematic diagram that the manometric module in the Drycorrosion apparatus shown in Fig. 1 is arranged on processing procedure chamber.
Fig. 3 is the flow chart for the dry etching method that another embodiment of the present invention provides.
Embodiment
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is carried out clear
Chu, it is fully described by.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiment party
Formula.The embodiment of base in the present invention, those of ordinary skill in the art are obtained on the premise of creative work is not made
The every other embodiment obtained, should all belong in the scope of protection of the invention.
In addition, the explanation of following embodiment is with reference to additional diagram, the spy implemented to illustrate the present invention can be used to
Determine embodiment.The direction term being previously mentioned in the present invention, for example, " on ", " under ", "front", "rear", "left", "right", " interior ",
" outer ", " side " etc., only it is the direction with reference to annexed drawings, therefore, the direction term used is to more preferably, more clearly say
It is bright and understand the present invention, rather than instruction or infer the device of meaning or element and must have specific orientation, with specific side
Position construction and operation, therefore be not considered as limiting the invention.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or detachably connected, or integratedly be connected
Connect；Can mechanically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements
The connection in portion.For the ordinary skill in the art, the tool of above-mentioned term in the present invention can be understood with concrete condition
Body implication.
In addition, in the description of the invention, unless otherwise indicated, " multiple " are meant that two or more.If this
Occurring the term of " process " in specification, it refers not only to independent process, when can not clearly be distinguished with other processes, as long as
It can realize that the effect desired by the process is then also included within this term.In addition, the numerical value represented in this specification with " ￣ "
Scope refers to the scope that " ￣ " front and rear numerical value recorded is included as minimum value and maximum.In the accompanying drawings, tie
The similar or identical unit of structure is indicated by the same numeral.
The embodiments of the invention provide a kind of Drycorrosion apparatus, and it can prevent the manometric modules such as vacuum meter by etching technics system
The influence of caused processing procedure product in journey, so as to avoid the occurrence of null offset, the problems such as maintenance period is short, the cost of overhaul is high.
It is described in detail individually below.
Refer to the structural representation of Fig. 1 and Fig. 2, Fig. 1 for Drycorrosion apparatus provided in an embodiment of the present invention, Fig. 2 Fig. 1
Manometric module in shown Drycorrosion apparatus is arranged on the schematic diagram on processing procedure chamber.The present invention Drycorrosion apparatus 100 to
Dry etching processing procedure is carried out to the film layer structure of each layer metal material on the substrate (including upper substrate and infrabasal plate) of display panel,
The various signal wires for making the film layer structure of metal material pattern and be formed on substrate, such as gate line, source/drain polar curve.
In an embodiment of the present invention, the Drycorrosion apparatus 100 include processing procedure chamber 10, at least one gas deflation assembly 30 and
At least one manometric module 50.The processing procedure chamber 10 to treat processing assembly (present invention in for display panel upper substrate or
Infrabasal plate) carry out dry etching process operations；The gas deflation assembly 30 is connected to the processing procedure chamber 10, to discharge dry etching processing procedure
In caused processing procedure product；The manometric module 50 is arranged on the processing procedure chamber 10, to monitor the processing procedure chamber in real time
Pressure in 10, so that whether the process conditions in processing procedure chamber 10 described in real-time judge are up to standard.Wherein, the manometric module 50 with
The junction of the processing procedure chamber 10 sets sleeve 70 (referring to Fig. 2), and the sleeve pipe 70 flows to trap the processing procedure chamber 10
The processing procedure product of manometric module 50, so as to prevent the processing procedure product in the processing procedure chamber 10 to be flowed into the pressure measurement group
In part 50.
The Drycorrosion apparatus that the present embodiment provides, relatively existing Drycorrosion apparatus, the installation site of manometric module 50 from
It is transferred on gas deflation assembly 30 on the processing procedure chamber 10, reduces influence of the processing procedure product deposition to manometric module 50；In addition,
The junction of the manometric module 50 and the processing procedure chamber 10 sets sleeve 70, and the system is trapped by described sleeve pipe 70
Journey product is flowed into the manometric module 50, so as to avoiding the manometric module 50 from being influenceed by the processing procedure product and
There is the problems such as null offset, maintenance period is short, the cost of overhaul is high.
In an embodiment of the present invention, described sleeve pipe 70 is made of the aluminum component of ceramics or plating anode film.
In an embodiment of the present invention, described sleeve pipe 70 is installed on the processing procedure chamber 10, and is located at the processing procedure chamber
10 with the access path of the manometric module 50.The sleeve pipe 70 has hackly inwall (figure is not marked), and thick by this
Rough uneven inwall traps the processing procedure product in the processing procedure chamber 10, prevents the processing procedure product from being flowed into through the sleeve pipe 70
In the manometric module 50, its measurement accuracy is influenceed to avoid the manometric module 50 from blocking.
In an embodiment of the present invention, the roughness of the inwall of described sleeve pipe 70 is set it is as big as possible, with enhancing
It traps the ability of the processing procedure product.Specifically, can be by forming raised and/or groove in the inwall of described sleeve pipe 70
And/or the stop configurations such as block increase the roughness of the inwall of described sleeve pipe 70, and in the present invention, the backstop knot of the inwall
Structure is not limited to the structures such as above-mentioned groove, projection, block, as long as making the inwall have the function of trapping processing procedure product.
In an embodiment of the present invention, described sleeve pipe 70 is formed rough by way of blasting treatment or plated film
Inwall.Wherein, the material of the blasting treatment is yttria (Y2O3), it will be understood that the material of the blasting treatment is not
It is limited to this.In the present invention, the roughness of the inwall of described sleeve pipe 70 and the method in the inwall of sleeve pipe 70 formation roughness are not done
It is specific to limit, as long as the inwall of described sleeve pipe 70 can be trapped largely described in the processing procedure product inflow in the processing procedure chamber 10
Manometric module 50, while real-time monitoring of the manometric module 50 to the processing procedure chamber 10 is not influenceed.
In another embodiment of the present invention, the characteristic of the processing procedure product can be also directed in one end of described sleeve pipe 70
Filter screen is set, to flow through the processing procedure product of the sleeve pipe 70 by the method for physics or chemistry to remove by the filter screen.
In another embodiment of the present invention, described sleeve pipe 70 can also be cancelled, and be changed in the manometric module 50 and institute
State the junction between processing procedure chamber 10 and one structure with filtering function, such as filter screen or filter membrane are set, to pass through the filter
The structure such as net or filter membrane traps the processing procedure product, prevents its from flowing into the manometric module 50.
Referring to Fig. 2, in an embodiment of the present invention, it is provided through in the side wall (figure is not marked) of the processing procedure chamber 10
Measured hole 11, the manometric module 50 is docked to the measured hole 11, and passes through the measured hole 11 and the phase of processing procedure chamber 10
Connection, so as to monitor the pressure in the processing procedure chamber 10 in real time, so that the process conditions in processing procedure chamber 10 described in real-time judge are
It is no up to standard.Described sleeve pipe 70 is detachably arranged in the measured hole 11, can catch be flowed into by the processing procedure chamber 10 it is described
While the processing procedure product of manometric module 50；Described sleeve pipe 70 can also be removed to obtain clear in time after processing procedure terminates
Reason, so that it is guaranteed that described sleeve pipe 70 traps the ability of the processing procedure product.
In an embodiment is invented, described sleeve pipe 70 is arranged on the measured hole from the inwall side of the processing procedure chamber 10
In 11, and mutually to be fixed with other part (not shown) in the processing procedure chamber 10, described sleeve pipe 70 is easily installed and dismantled, and
Periodic cleaning and maintenance can be carried out together with the inside miscellaneous part of processing procedure chamber 10.So as to its in the processing procedure chamber 10
Its part is together according to CT Cycle Time regular dismounting and cleaning.
In an embodiment of the present invention, described sleeve pipe 70 includes body 71 and formed in the convex of described one end of body 71
Edge 73, the body 71 are held in the measured hole 11, and radial convex of the flange 73 along the body 71 is located at described
One end of body 71, and support on the inwall at the edge of measured hole 11, conveniently to dismantle the sleeve pipe 70.It is appreciated that
, when described sleeve pipe 70 and other parts in the processing procedure chamber 10 are mutually fixed, then realized by the flange 73 and processing procedure
Interfixing between other parts in chamber 10, you can regular according to CT Cycle Time with together with the part in the processing procedure chamber 10
Cleaned after dismounting.
In an embodiment of the present invention, each manometric module 50 includes vacuum meter 51 and air valve 53, described true
Sky meter 51 is connected to the measured hole 11 on the processing procedure chamber 10 by pipeline (figure is not marked), and the air valve 53 is arranged on the pipeline
On, to control the conducting and cut-off of the pipeline between the vacuum meter 51 and the processing procedure chamber 10.When the air valve 53 controls
During the pipeline conducting, it is connected between the vacuum meter 51 and the processing procedure chamber 10, you can monitor the processing procedure chamber 10 in real time
Interior pressure.
In an embodiment of the present invention, the manometric module 50 is provided with two, and two manometric modules 50 is true
The reconnaissance range of sky meter 51 is different, and for 0~0.1Torr, (Torr is pressure unit to the reconnaissance range of one of vacuum meter 51, is
Atmospheric pressure 1/760), the reconnaissance range of another vacuum meter 51 is 0~2Torr.It is it is understood that not right in the present invention
The quantity of the manometric module 50 and the reconnaissance range of vacuum meter are specifically limited.
The air valve 53 to control the conducting and cut-off of the pipeline between the vacuum meter 51 and the processing procedure chamber 10, and
And only open in a low voltage state and turn on the pipeline between the vacuum meter 51 and processing procedure chamber 10；When in the processing procedure chamber 10
When pressure increases, such as when reaching atmospheric pressure in processing procedure chamber 10, the air valve 53 closure is ended the vacuum meter 51 with
Pipeline between processing procedure chamber 10, effectively protect the vacuum meter 51.In the present invention, not to the species and structure of the air valve 53
It is specifically limited, no longer describes herein.
The Drycorrosion apparatus 100 of the present invention, because the manometric module 50 is directly anchored on the processing procedure chamber 10, brings
Following beneficial effect：1st, the sensitivity that the manometric module 50 monitors is added；2nd, the temperature of the manometric module 50 with
The temperature change of the processing procedure chamber 10 and change, will not because of manometric module 50 temperature it is relatively low and cause product to be deposited on institute
State in manometric module 50, the final measurement accuracy for influenceing manometric module 50；3rd, the manometric module 50 and the processing procedure are shortened
Path between chamber 10, so as to reduce the processing procedure product on the pipeline being deposited between manometric module 50 and processing procedure chamber 10,
Also reduce influence of the processing procedure product to the precision of manometric module 50.
In an embodiment of the present invention, the processing procedure chamber 10 also has multiple steam vents (figure is not marked), each exhaust
Component 30 is connected by a steam vent with the processing procedure chamber 10.Each described gas deflation assembly 30 includes at least one true
Empty pump 31, and a corresponding steam vent is connected to by pipeline (figure is not marked), the processing procedure in the processing procedure chamber 10 to be given birth to
Detached into thing from the processing procedure chamber 10.
In an embodiment of the present invention, each gas deflation assembly 30 also includes an at least valve 33, each valve
Door 33 is arranged on the pipeline between a vavuum pump 31 and the processing procedure chamber 10, to control the vavuum pump 31 and processing procedure chamber 10
Between passage conducting and disconnection.It is appreciated that the valve 33 can be operated pneumatic valve, electrically operated valve or machinery valve
Any of, it is not specifically limited in the present invention.
In an embodiment of the present invention, the Drycorrosion apparatus also includes recovery component (not shown), multiple rows
Pneumatic module 30 is connected to the recovery component, and the processing procedure to be discharged by the recovery component to the gas deflation assembly 30 is given birth to
Recycled into thing.
In an embodiment of the present invention, the processing procedure chamber 10 includes cavity 12, is arranged at the upper of the top of cavity 12
Electrode 13 and the bottom electrode 15 for being arranged at the lower section of cavity 12, the component to be processed are placed on the default position in the cavity 12
Put.The etching gas being passed through in the cavity 12 are changed into plasma (i.e. plasma-based shape by the Top electrode 13 with bottom electrode 15
State), and the component to be processed in the cavity 12 is positioned over by the plasma etching.Above-mentioned measured hole 11 is through setting
In the side wall of the cavity 12, the steam vent, which runs through, to be arranged on the bottom wall of the cavity 12.
The operation principle of the Drycorrosion apparatus 100 of the present invention is as follows：
First, component to be processed is placed on the predetermined position in the cavity 12, and seals the cavity 12.
Secondly, the air in the cavity 12 is discharged by the gas deflation assembly 30, until reaching in the cavity 12
Vacuum state.So as to monitor the pressure in the processing procedure chamber 10 in real time, so as to the processing procedure bar in processing procedure chamber 10 described in real-time judge
Whether part is up to standard.
Then, toward being passed through etching gas in the cavity 12, and detected by the manometric module 50 in processing procedure chamber 10
Process conditions it is up to standard when, start to treat processing assembly and carry out dry etching operation.
It is understood that it can be passed through after etching gas and measured by the manometric module 50 in the cavity 12
Pressure reach process conditions after, then the Top electrode 13 and the bottom electrode 15 are powered, you can open dry etching processing procedure and make
Industry.Wherein, when the Top electrode 13 in the cavity 10 and bottom electrode 15 are powered, the etching gas in cavity 10 are made to form plasma-based
State, ion and/or active atomic group and/or molecular radical under the plasma-based state treat processing assembly carry out ion Hong
Hit and chemically react, realize dry etching process operations.Also, during processing procedure, it can also be monitored according to the manometric module 50
To parameter (i.e. pressure) adjust process parameter in the cavity 12 in real time.Meanwhile supervised in real time by the vacuum meter 51
During the pressure surveyed in the processing procedure chamber 10, the constantly trapping of sleeve pipe 70 in the measured hole 11 flows through institute with air-flow
State the processing procedure product of sleeve pipe 70, you can effectively prevent the processing procedure product from flowing into the vacuum meter 51.
Finally, after the completion of dry etching processing procedure, processing procedure product is discharged by the gas deflation assembly 30, and by described time
Receive component and reclaim the processing procedure product.
The Drycorrosion apparatus of the present invention, is provided with sleeve pipe 70, and prevent by described sleeve pipe 70 in the measured hole 11
The processing procedure product flows into the manometric module 50, occurs zero so as to avoid manometric module 50 from being influenceed by processing procedure product
The problems such as point drift, maintenance period are short, the cost of overhaul is high.In addition, in the Drycorrosion apparatus of the present invention, relatively existing dry etching
Device, the installation site of manometric module 50 switch to be directly installed on the processing procedure chamber 10 from gas deflation assembly 30, bring with
Lower beneficial effect：1st, the sensitivity that the manometric module 50 monitors is added；2nd, the temperature of the manometric module 50 is with described
The temperature change of processing procedure chamber 10 and change, will not because of manometric module 50 temperature it is relatively low and cause processing procedure product to be deposited on institute
State in manometric module 50, the final measurement accuracy for influenceing manometric module 50；3rd, the manometric module 50 and the processing procedure are shortened
Path between chamber 10, so as to reduce the generation of the processing procedure on the pipeline being deposited between the manometric module 50 and processing procedure chamber 10
Thing, also reduce influence of the processing procedure product to the precision of manometric module 50.
Fig. 3 is please combined in the lump, and Fig. 3 is the flow chart for the dry etching method that another embodiment of the present invention provides.The dry etching
Etching method treats processing assembly by above-mentioned Drycorrosion apparatus and carries out dry etching.In embodiments of the present invention, the dry etching side
Method comprises the following steps：
S301：After sealing the cavity 12, the cavity 12 is lined up vacuum state by the gas deflation assembly 30.
S302：It is passed through etching gas in the cavity 12, the process conditions in the inspection process chamber 10 of manometric module 50 are
It is no up to standard.
S303：When the process conditions that the manometric module 50 measures are up to standard, the Top electrode 13 in the cavity 12 is with
Electrode 15 is powered, and etching gas in cavity 10 is formed plasma-based state, ion and/or active atomic under the plasma-based state
Group and/or molecular radical treat processing assembly and carry out Ions Bombardment and chemical reaction, realize dry etching process operations.
S304：After the completion of dry etching processing procedure, the gas deflation assembly 30 by caused processing procedure product in dry etching processing procedure from
Discharged in the cavity 12.
In the present embodiment, before dry etching processing procedure starts, first component to be processed is placed on default in the cavity 12
Opening position, and the cavity 12 is sealed, then the air in the cavity 12 is discharged by the gas deflation assembly 30, until institute
State in cavity 12 and reach vacuum state, so as to monitor the pressure in the processing procedure chamber 10 in real time, so as to processing procedure described in real-time judge
Whether the process conditions in chamber 10 are up to standard.Also, in the present invention, after etching gas are passed through and the manometric module can be passed through
After 50 pressure measured in the cavity 12 reach process conditions, then the Top electrode 13 and the bottom electrode 15 are powered, i.e.,
Dry etching process operations can be opened.In addition, during processing procedure, can also be according to the parameter that the manometric module 50 monitors (i.e.
Pressure) process parameter in the cavity 12 is adjusted in real time.Meanwhile the processing procedure chamber is being monitored by the vacuum meter 51 in real time
During pressure in 10, the sleeve pipe 70 in the measured hole 11 can effectively prevent from flowing through the processing procedure generation of described sleeve pipe 70
Thing, you can effectively prevent the processing procedure product from flowing into the vacuum meter 51.
The dry etching method of the present invention, can effectively avoid the manometric module 50 from being influenceed by processing procedure product and occur zero
The problems such as point drift, maintenance period are short, the cost of overhaul is high.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the feature for combining the embodiment or example description
Included at least one embodiment or example of the present invention.In this manual, the schematic representation of above-mentioned term is differed
Surely identical embodiment or example are referred to.Moreover, specific features, structure, material or the feature of description can be any one
Combined in an appropriate manner in individual or multiple embodiments or example.
The Drycorrosion apparatus and dry etching method provided above the embodiment of the present invention is described in detail, herein
Apply specific case to be set forth the principle and embodiment of the present invention, the explanation of above example is only intended to help
Understand the method and its core concept of the present invention；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention,
There will be changes in specific embodiments and applications, in summary, this specification content should not be construed as to this
The limitation of invention.
Claims (10)
1. a kind of Drycorrosion apparatus, including processing procedure chamber, at least a gas deflation assembly and an at least manometric module, the processing procedure chamber holds
Component to be processed is put, and dry etching process operations are carried out to the component to be processed, the gas deflation assembly is connected to the processing procedure
Chamber, to discharge caused processing procedure product in dry etching processing procedure, the manometric module monitoring in the processing procedure chamber in real time
Pressure, it is characterised in that the manometric module be arranged on the processing procedure chamber on, the Drycorrosion apparatus also includes sleeve,
Described sleeve pipe is arranged at the junction of the manometric module and the processing procedure chamber, and is connected with the processing procedure chamber, described sleeve pipe
To trap the processing procedure product that processing procedure chamber flows to manometric module, the caused processing procedure generation logistics in dry etching processing procedure is prevented
Enter in the manometric module.
2. Drycorrosion apparatus as claimed in claim 1, it is characterised in that described sleeve pipe shape by way of sandblasting or plated film
Into hackly inwall, described sleeve pipe flows to the pressure measurement group to trap by hackly inwall by the process chamber
The processing procedure product of part.
3. Drycorrosion apparatus as claimed in claim 1, it is characterised in that the inwall of described sleeve pipe forms groove and/or projection
To increase the roughness of described sleeve pipe, and the groove that is formed by the inwall and/or projection trap the processing procedure product.
4. Drycorrosion apparatus as claimed in claim 1, it is characterised in that run through in the side wall of the processing procedure chamber and offer measurement
Hole, the manometric module are connected by the measured hole with the processing procedure chamber, and described sleeve pipe is detachably arranged in the survey
In metering-orifice.
5. Drycorrosion apparatus as claimed in claim 4, it is characterised in that described sleeve pipe is pacified from the inwall side of the processing procedure chamber
Splice in the measured hole, and with other parts of the processing procedure intracavitary.
6. Drycorrosion apparatus as claimed in claim 4, it is characterised in that described sleeve pipe includes body and flange, the pipe
Body is held in the measured hole, and radial convex of the flange along the body is located at one end of the body, and supports
On the inwall of the measurement bore edges.
7. the Drycorrosion apparatus as described in claim 1 to 6 any one, it is characterised in that the manometric module includes vacuum
Meter and air valve, the vacuum meter are connected to the processing procedure chamber by pipeline, the air valve be arranged on the vacuum meter with it is described
On pipeline between processing procedure chamber, to control the conducting and cut-off of the pipeline between the vacuum meter and the processing procedure chamber.
8. the Drycorrosion apparatus as described in claim 1 to 6 any one, it is characterised in that the processing procedure chamber has steam vent,
The gas deflation assembly includes vavuum pump and valve, and the vavuum pump is connected to the steam vent by pipeline, and the valve is set
Put on the pipeline between the steam vent and the vavuum pump, to control the pipe between the vavuum pump and the steam vent
The conducting and cut-off on road.
9. the Drycorrosion apparatus as described in claim 1 to 6 any one, it is characterised in that the processing procedure chamber includes cavity, set
The Top electrode being placed in above the cavity and the bottom electrode being arranged at below the cavity, the Top electrode and the bottom electrode
The etching gas being passed through in the cavity are changed into plasma, the plasma carries out anti-with the component to be processed
Should, complete dry etching processing procedure.
10. a kind of dry etching method, it is by the Drycorrosion apparatus as described in claim 1 to 9 any one to be processed group
Part carries out dry etching, and the dry etching method comprises the following steps：
The cavity of the Drycorrosion apparatus is sealed, and the cavity is lined up vacuum shape by the gas deflation assembly of the Drycorrosion apparatus
State；
Etching gas are passed through in the cavity, the manometric module of the Drycorrosion apparatus detects the process conditions in the cavity
It is whether up to standard；
When the process conditions that the manometric module measures are up to standard, the Top electrode in the cavity is powered with bottom electrode, makes cavity
Interior etching gas form plasma-based state, ion and/or active atomic group and/or molecular radical pair under the plasma-based state
Component to be processed carries out Ions Bombardment and chemical reaction, realizes dry etching process operations；
After the completion of dry etching processing procedure, the gas deflation assembly arranges processing procedure product caused by dry etching processing procedure out of described cavity
Go out.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711115335.8A CN107808838A (en) | 2017-11-13 | 2017-11-13 | Drycorrosion apparatus and dry etching method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711115335.8A CN107808838A (en) | 2017-11-13 | 2017-11-13 | Drycorrosion apparatus and dry etching method |
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| CN201711115335.8A Pending CN107808838A (en) | 2017-11-13 | 2017-11-13 | Drycorrosion apparatus and dry etching method |
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| CN108593198A (en) * | 2018-04-23 | 2018-09-28 | 武汉华星光电技术有限公司 | Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system |
| CN108896239A (en) * | 2018-04-24 | 2018-11-27 | 武汉华星光电技术有限公司 | Pressure gauge component and vacuum Drycorrosion apparatus |
| KR20200012551A (en) * | 2018-07-27 | 2020-02-05 | (주)아이솔루션 | An Apparatus for Exhausting a Gas from a Processing Chamber with an Improved Venting Efficiency |
| WO2020133782A1 (en) * | 2018-12-29 | 2020-07-02 | 武汉华星光电技术有限公司 | Dry etching machine and dry etching method |
| CN114001858A (en) * | 2020-07-28 | 2022-02-01 | 中微半导体设备(上海)股份有限公司 | Capacitance type film vacuum gauge, plasma reaction device and film preparation method |
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