CN107805067A - A kind of dielectric constant microwave ceramic medium of zero frequency temperature coefficient and ultra-low loss and preparation method thereof - Google Patents
A kind of dielectric constant microwave ceramic medium of zero frequency temperature coefficient and ultra-low loss and preparation method thereof Download PDFInfo
- Publication number
- CN107805067A CN107805067A CN201711066157.4A CN201711066157A CN107805067A CN 107805067 A CN107805067 A CN 107805067A CN 201711066157 A CN201711066157 A CN 201711066157A CN 107805067 A CN107805067 A CN 107805067A
- Authority
- CN
- China
- Prior art keywords
- sio
- mgta
- microwave
- preparation
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 24
- 239000011230 binding agent Substances 0.000 claims description 11
- 239000011812 mixed powder Substances 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 5
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 3
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 claims description 3
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 3
- 238000005469 granulation Methods 0.000 claims description 3
- 230000003179 granulation Effects 0.000 claims description 3
- 235000019812 sodium carboxymethyl cellulose Nutrition 0.000 claims description 3
- 229920001027 sodium carboxymethylcellulose Polymers 0.000 claims description 3
- 229910052839 forsterite Inorganic materials 0.000 claims 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 239000004698 Polyethylene Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Inorganic materials O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims 1
- -1 polyethylene Polymers 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 229910004283 SiO 4 Inorganic materials 0.000 abstract description 32
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 abstract description 3
- 229910006404 SnO 2 Inorganic materials 0.000 abstract description 3
- 229910010413 TiO 2 Inorganic materials 0.000 abstract description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
本发明涉及一种零频率温度系数及超低损耗的低介电常数微波介质陶瓷及其制备方法,所述微波介质陶瓷的化学通式为xMg2SiO4‑(1‑x)MgTa2O6+y wt%B,所述B为ZnO、CuO、Al2O3、Ga2O3、TiO2、ZrO2、SnO2、MnO2、Nb2O5、Sb2O5和WO3中的至少一种,其中x代表Mg2SiO4占Mg2SiO4和MgTa2O6总摩尔量的百分数,0<x<1;y代表B占Mg2SiO4和MgTa2O6的总质量的百分数,0≤y≤5。The invention relates to a low dielectric constant microwave dielectric ceramic with zero frequency temperature coefficient and ultra-low loss and a preparation method thereof. The general chemical formula of the microwave dielectric ceramic is xMg 2 SiO 4 ‑(1‑x)MgTa 2 O 6 +y wt% B, said B is ZnO, CuO, Al 2 O 3 , Ga 2 O 3 , TiO 2 , ZrO 2 , SnO 2 , MnO 2 , Nb 2 O 5 , Sb 2 O 5 and WO 3 At least one, where x represents the percentage of Mg 2 SiO 4 in the total molar mass of Mg 2 SiO 4 and MgTa 2 O 6 , 0<x<1; y represents the percentage of B in the total mass of Mg 2 SiO 4 and MgTa 2 O 6 Percentage, 0≤y≤5.
Description
技术领域technical field
本发明属于微波介质陶瓷技术领域,具体涉及一种低介电常数、超低介电损耗、频率温度系数近零的微波介质陶瓷及其制备方法。The invention belongs to the technical field of microwave dielectric ceramics, and in particular relates to a microwave dielectric ceramic with low dielectric constant, ultra-low dielectric loss and nearly zero frequency temperature coefficient and a preparation method thereof.
背景技术Background technique
近年来,随着5G通讯技术、全球定位技术迅猛发展,作为微波滤波器、谐振器及振荡器等无线通讯器件用的高性能微波介质陶瓷需求量日益增多,尤其是超低微波介电损耗和近零频率温度系数的陶瓷。这种陶瓷既可以满足实现微波通信设备的可移动性、便携性、小型化、微型化的要求,又可以满足在微波范围具有高性能、高可靠性、大容量信息传输等工作特性要求,得到广泛关注。In recent years, with the rapid development of 5G communication technology and global positioning technology, the demand for high-performance microwave dielectric ceramics used as wireless communication devices such as microwave filters, resonators and oscillators is increasing, especially ultra-low microwave dielectric loss and Ceramics with near zero frequency temperature coefficient. This kind of ceramic can not only meet the requirements of mobility, portability, miniaturization, and miniaturization of microwave communication equipment, but also meet the requirements of high performance, high reliability, and large-capacity information transmission in the microwave range. extensive attention.
MgTa2O6具有较高的品质因数Qf值,中低介电常数εr和正的谐振频率温度系数τf(Qf=60000GHz,εr=30,τf=30ppm/℃)不能够满足实际需要,而Mg2SiO4同样也具有优异的微波介电性能(Qf=270000GHz,εr=6.8,τf=-67ppm/℃),也不能满足应用需求。MgTa 2 O 6 has a high quality factor Qf value, medium and low dielectric constant ε r and positive resonant frequency temperature coefficient τ f (Qf = 60000GHz, ε r = 30, τ f = 30ppm/℃) can not meet the actual needs , and Mg 2 SiO 4 also has excellent microwave dielectric properties (Qf = 270000 GHz, ε r = 6.8, τ f = -67ppm/°C), which cannot meet the application requirements.
发明内容Contents of the invention
针对上述问题,本发明的目的在于提供一种低介电常数、超低介电损耗、频率温度系数近零的微波介质陶瓷及其制备方法。In view of the above problems, the object of the present invention is to provide a microwave dielectric ceramic with low dielectric constant, ultra-low dielectric loss and nearly zero frequency temperature coefficient and its preparation method.
一方面,本发明提供了一种低介电常数、超低介电损耗的微波介质陶瓷,所述微波介质陶瓷的化学通式为xMg2SiO4-(1-x)MgTa2O6+y wt%B,所述B为ZnO、CuO、Al2O3、Ga2O3、TiO2、ZrO2、SnO2、MnO2、Nb2O5、Sb2O5和WO3中的至少一种,其中x代表Mg2SiO4占Mg2SiO4和MgTa2O6总摩尔量的百分数,0<x<1;y代表B占Mg2SiO4和MgTa2O6的总质量的百分数,0≤y≤5。On the one hand, the present invention provides a microwave dielectric ceramic with low dielectric constant and ultra-low dielectric loss. The general chemical formula of the microwave dielectric ceramic is xMg 2 SiO 4 -(1-x)MgTa 2 O 6 +y wt% B, said B being at least one of ZnO, CuO, Al 2 O 3 , Ga 2 O 3 , TiO 2 , ZrO 2 , SnO 2 , MnO 2 , Nb 2 O 5 , Sb 2 O 5 and WO 3 species, where x represents the percentage of Mg 2 SiO 4 in the total molar weight of Mg 2 SiO 4 and MgTa 2 O 6 , 0<x<1; y represents the percentage of B in the total mass of Mg 2 SiO 4 and MgTa 2 O 6 , 0≤y≤5.
本发明利用介质陶瓷复合技术对介质陶瓷的介电性能进行调节,以期满足应用需求,其机理是:利用频率温度系数相反的两种基体材料(MgTa2O6具有正的谐振频率温度系数τf=30ppm/℃,而Mg2SiO4具有负的频率温度系数τf=-67ppm/℃),通过控制两相相对成分含量(即摩尔比x:(1-x),0<x<1),获得频率温度系数近零的结果。此外在两种基体材料中加入适量B物质(B与Mg2SiO4和MgTa2O6的总质量的比y wt%,0≤y≤5),改善材料的烧结特性,稳定材料的介电性能。The present invention uses dielectric ceramic composite technology to adjust the dielectric properties of dielectric ceramics in order to meet the application requirements. The mechanism is: using two matrix materials with opposite frequency temperature coefficients (MgTa 2 O 6 has a positive resonance frequency temperature coefficient τ f =30ppm/°C, while Mg 2 SiO 4 has a negative frequency temperature coefficient τ f =-67ppm/°C), by controlling the relative composition content of the two phases (ie molar ratio x: (1-x), 0<x<1) , the result that the frequency temperature coefficient is close to zero is obtained. In addition, an appropriate amount of B substance (the ratio of B to the total mass of Mg 2 SiO 4 and MgTa 2 O 6 y wt%, 0≤y≤5) is added to the two matrix materials to improve the sintering characteristics of the material and stabilize the dielectric properties of the material performance.
较佳地,所述微波介质陶瓷的介电常数为6.9~28.3,品质因数Qf值为60000~275000GHz,谐振频率温度系数为-70~55ppm/℃。Preferably, the dielectric constant of the microwave dielectric ceramic is 6.9-28.3, the quality factor Qf is 60000-275000 GHz, and the resonant frequency temperature coefficient is -70-55 ppm/°C.
较佳地,0.5≤x≤0.7或/和1≤y≤3。Preferably, 0.5≤x≤0.7 or/and 1≤y≤3.
又,较佳地,当0.5≤x≤0.7和1≤y≤3时,所述微波介质陶瓷的介电常数为12.1~15.2,优选为13~15,品质因数Qf值为120000~152000GHz,优选为125000~140000GHz,谐振频率温度系数为-11~18ppm/℃,优选为0~4ppm/℃。Also, preferably, when 0.5≤x≤0.7 and 1≤y≤3, the dielectric constant of the microwave dielectric ceramic is 12.1-15.2, preferably 13-15, and the quality factor Qf value is 120000-152000 GHz, preferably 125,000 to 140,000 GHz, and the resonance frequency temperature coefficient is -11 to 18 ppm/°C, preferably 0 to 4 ppm/°C.
另一方面,本发明提供了一种如上述的微波介质陶瓷的制备方法,包括:In another aspect, the present invention provides a method for preparing the microwave dielectric ceramic as above, comprising:
将Mg2SiO4粉体和MgTa2O6粉体按xMg2SiO4-(1-x)MgTa2O6化学计量组成称量并混合,得到混合粉体;Weighing and mixing Mg 2 SiO 4 powder and MgTa 2 O 6 powder according to xMg 2 SiO 4 -(1-x)MgTa 2 O 6 stoichiometric composition to obtain mixed powder;
在所得混合粉体中加入B和粘结剂,经破碎,造粒和成型后,得到坯体;Add B and binder to the obtained mixed powder, and after crushing, granulation and molding, a green body is obtained;
将所得坯体在1300~1450℃下烧结4~16h,得到所述微波介质陶瓷。The obtained body is sintered at 1300-1450° C. for 4-16 hours to obtain the microwave dielectric ceramic.
较佳地,以MgO、Ta2O5、SiO2为原料,分别预先合成Mg2SiO4粉体和MgTa2O6粉体。Preferably, the Mg 2 SiO 4 powder and the MgTa 2 O 6 powder are pre-synthesized respectively using MgO, Ta 2 O 5 , and SiO 2 as raw materials.
又,较佳地,将MgO和SiO2混合后,在1000~1250℃下煅烧4~12h,得到Mg2SiO4。Also, preferably, after mixing MgO and SiO 2 , they are calcined at 1000-1250° C. for 4-12 hours to obtain Mg 2 SiO 4 .
又,较佳地,将MgO和Ta2O5混合后,在1000~1250℃下煅烧4~12h,得到MgTa2O6粉体。Also, preferably, after mixing MgO and Ta 2 O 5 , calcining at 1000-1250° C. for 4-12 hours to obtain MgTa 2 O 6 powder.
较佳地,所述B的质量为混合粉体质量的0~5wt%,优选为1~3wt%。Preferably, the mass of B is 0-5 wt%, preferably 1-3 wt%, of the mass of the mixed powder.
较佳地,所述粘结剂为聚乙烯醇PVA、聚乙烯醇缩丁醛PVB和羧甲基纤维素钠CMC中的至少一种,所述粘结剂的用量为混合粉体质量的2~4wt%。Preferably, the binding agent is at least one of polyvinyl alcohol PVA, polyvinyl butyral PVB and sodium carboxymethyl cellulose CMC, and the amount of the binding agent is 2% of the mixed powder quality. ~4wt%.
本发明的优点是:xMg2SiO4-(1-x)MgTa2O6+y wt%B复合微波介质陶瓷材料介电常数低且可调节范围广为6.9~28.3,品质因数高60000~275000GHz,谐振频率温度系数连续可调,可满足新一代通讯需求。The advantages of the present invention are: xMg 2 SiO 4 -(1-x)MgTa 2 O 6 +y wt%B composite microwave dielectric ceramic material has a low dielectric constant, a wide adjustable range of 6.9-28.3, and a high quality factor of 60,000-275,000 GHz , The resonant frequency temperature coefficient is continuously adjustable, which can meet the needs of the new generation of communication.
具体实施方式Detailed ways
以下通过下述实施方式进一步说明本发明,应理解,下述实施方式仅用于说明本发明,而非限制本发明。The present invention will be further described below through the following embodiments. It should be understood that the following embodiments are only used to illustrate the present invention, not to limit the present invention.
本发明中,所述低介电常数、高品质因数、近零频率温度系数的复合微波介质陶瓷,该微波介质陶瓷的化学式可表示为xMg2SiO4-(1-x)MgTa2O6+y wt%B。其中B可为ZnO、CuO、Al2O3、Ga2O3、TiO2、ZrO2、SnO2、MnO2、Nb2O5、Sb2O5和WO3中的至少一种。其中x代表Mg2SiO4占Mg2SiO4和MgTa2O6总摩尔量的百分数,0<x<1(优选为0.5≤x≤0.7);y代表B占Mg2SiO4和MgTa2O6的总质量的百分数,0≤y≤5(优选为1≤y≤3)。若B的加入量超过5wt%,将生成新的化合物,所述微波介质陶瓷的各项性能将偏离预测值。In the present invention, the composite microwave dielectric ceramic with low dielectric constant, high quality factor, and near-zero frequency temperature coefficient can be expressed as xMg 2 SiO 4 -(1-x)MgTa 2 O 6 + y wt% B. Wherein B can be at least one of ZnO, CuO, Al 2 O 3 , Ga 2 O 3 , TiO 2 , ZrO 2 , SnO 2 , MnO 2 , Nb 2 O 5 , Sb 2 O 5 and WO 3 . Where x represents the percentage of Mg 2 SiO 4 in the total molar weight of Mg 2 SiO 4 and MgTa 2 O 6 , 0<x<1 (preferably 0.5≤x≤0.7); y represents the percentage of B in Mg 2 SiO 4 and MgTa 2 O The percentage of the total mass of 6 , 0≤y≤5 (preferably 1≤y≤3). If the added amount of B exceeds 5wt%, new compounds will be generated, and various properties of the microwave dielectric ceramic will deviate from predicted values.
本发明中,所述微波介质陶瓷的介电常数为6.9~28.3,品质因数Qf值为60000~275000GHz,谐振频率温度系数为-70~55ppm/℃。当0.5≤x≤0.7,1≤y≤3时,在此范围内,复合微波介质陶瓷介电性能稳定,可重复性好,所述微波介质陶瓷的介电常数为12.1~15.2,优选为13~15,品质因数Qf值为120000~152000GHz,优选为125000~140000GHz,谐振频率温度系数为-11~18ppm/℃,优选为0~4ppm/℃。In the present invention, the dielectric constant of the microwave dielectric ceramic is 6.9-28.3, the quality factor Qf is 60000-275000 GHz, and the resonant frequency temperature coefficient is -70-55 ppm/°C. When 0.5≤x≤0.7, 1≤y≤3, within this range, the composite microwave dielectric ceramic has stable dielectric properties and good repeatability, and the dielectric constant of the microwave dielectric ceramic is 12.1 to 15.2, preferably 13 ~15, the quality factor Qf value is 120000~152000GHz, preferably 125000~140000GHz, and the temperature coefficient of resonance frequency is -11~18ppm/℃, preferably 0~4ppm/℃.
本发明的微波介质陶瓷,制备工艺简单,重复性良好,且微波介电性能优异。以下示例性地说明本发明提供的中低介电常数、极低介电损耗、频率温度系数近零的微波介质陶瓷的制备方法。The microwave dielectric ceramic of the invention has simple preparation process, good repeatability and excellent microwave dielectric properties. The following exemplifies the preparation method of microwave dielectric ceramics provided by the present invention with low and medium dielectric constant, extremely low dielectric loss, and frequency temperature coefficient near zero.
Mg2SiO4粉体和MgTa2O6粉体的制备。具体来说,以MgO、Ta2O5、SiO2为原料,分别预先合成Mg2SiO4粉体和MgTa2O6粉体。将MgO和SiO2或MgO和Ta2O5混合后,在1000~1250℃下煅烧4~12h,得到Mg2SiO4或MgTa2O6粉体。上述混合的方式可为球磨混合等。应注意,本发明中Mg2SiO4粉体和MgTa2O6粉体的制备并不仅限于上述制备方法。其他方法制备的Mg2SiO4粉体和MgTa2O6粉体也可用于此微波介质陶瓷的制备。Preparation of Mg 2 SiO 4 powder and MgTa 2 O 6 powder. Specifically, using MgO, Ta 2 O 5 , and SiO 2 as raw materials, Mg 2 SiO 4 powder and MgTa 2 O 6 powder were synthesized in advance, respectively. After mixing MgO and SiO 2 or MgO and Ta 2 O 5 , calcining at 1000-1250° C. for 4-12 hours to obtain Mg 2 SiO 4 or MgTa 2 O 6 powder. The above-mentioned mixing method may be ball milling and the like. It should be noted that the preparation of Mg 2 SiO 4 powder and MgTa 2 O 6 powder in the present invention is not limited to the above preparation methods. Mg 2 SiO 4 powder and MgTa 2 O 6 powder prepared by other methods can also be used in the preparation of this microwave dielectric ceramic.
将Mg2SiO4粉体和MgTa2O6粉体按xMg2SiO4-(1-x)MgTa2O6化学计量组成称量,并在混合粉体中加入B和粘结剂,经破碎,造粒和成型后,得到所需坯体。所述B的质量为混合粉体质量的0~5wt%,优选为1~3wt%。所述粘结剂可为聚乙烯醇(PVA)、聚乙烯醇缩丁醛(PVB)和羧甲基纤维素钠(CMC)等中的至少一种。所述粘结剂的用量可为混合粉体质量的2~4wt%。所述成型方式可为干压成型、冷等静压成型等。Weigh the Mg 2 SiO 4 powder and MgTa 2 O 6 powder according to the stoichiometric composition of xMg 2 SiO 4 -(1-x)MgTa 2 O 6 , add B and binder to the mixed powder, and crush , after granulation and molding, the desired green body is obtained. The mass of B is 0-5 wt%, preferably 1-3 wt%, of the mass of the mixed powder. The binder may be at least one of polyvinyl alcohol (PVA), polyvinyl butyral (PVB), sodium carboxymethylcellulose (CMC) and the like. The amount of the binder can be 2-4 wt% of the mass of the mixed powder. The forming method can be dry pressing forming, cold isostatic pressing forming and the like.
将所得坯体在1300℃~1450℃下烧结4~16h,得所述低介电常数微波介质陶瓷。The obtained green body is sintered at 1300° C. to 1450° C. for 4 to 16 hours to obtain the low dielectric constant microwave dielectric ceramic.
作为一个微波介质陶瓷的制备方法的示例,以高纯(纯度>99%)MgO、SiO2和Ta2O5为原料,在1000~1250℃(优选1000~1200℃)下煅烧4~12h合成Mg2SiO4粉体和MgTa2O6粉体,再按xMg2SiO4-(1-x)MgTa2O6化学计量组成称量,同时加入质量分数为y wt%的B,破碎后加入粘结剂进行造粒和成型,得到坯体;将所得坯体在1350~1450℃下烧结4~16h,得到所述微波介质陶瓷。As an example of a preparation method for microwave dielectric ceramics, high-purity (purity>99%) MgO, SiO 2 and Ta 2 O 5 are used as raw materials, and they are synthesized by calcining at 1000-1250°C (preferably 1000-1200°C) for 4-12h Mg 2 SiO 4 powder and MgTa 2 O 6 powder are weighed according to the stoichiometric composition of xMg 2 SiO 4 -(1-x)MgTa 2 O 6 , and at the same time, B is added with a mass fraction of y wt%. After crushing, add The binder is granulated and shaped to obtain a green body; the obtained green body is sintered at 1350-1450° C. for 4-16 hours to obtain the microwave dielectric ceramic.
测试制得陶瓷的微波介电性能。样品的直径和厚度使用千分尺测量。借助AgilentE8363A PNA网络分析仪,采用空腔法测量所制备圆柱形陶瓷材料的介电常数和介电损耗,将测试样品放入ESPEC MC-710F型高低温循环箱进行谐振频率温度系数的测量,温度范围为20~85℃,测试频率在9~16GHz范围内。The microwave dielectric properties of the prepared ceramics were tested. The diameter and thickness of the samples were measured using a micrometer. With the help of AgilentE8363A PNA network analyzer, the dielectric constant and dielectric loss of the prepared cylindrical ceramic materials were measured by the cavity method, and the test samples were placed in the ESPEC MC-710F high and low temperature cycle box to measure the temperature coefficient of the resonant frequency. The range is 20~85℃, and the test frequency is in the range of 9~16GHz.
下面进一步例举实施例以详细说明本发明。同样应理解,以下实施例只用于对本发明进行进一步说明,不能理解为对本发明保护范围的限制,本领域的技术人员根据本发明的上述内容做出的一些非本质的改进和调整均属于本发明的保护范围。下述示例具体的工艺参数等也仅是合适范围中的一个示例,即本领域技术人员可以通过本文的说明做合适的范围内选择,而并非要限定于下文示例的具体数值。Examples are given below to describe the present invention in detail. It should also be understood that the following examples are only used to further illustrate the present invention, and cannot be interpreted as limiting the protection scope of the present invention. Some non-essential improvements and adjustments made by those skilled in the art according to the above contents of the present invention all belong to this invention. protection scope of the invention. The specific process parameters and the like in the following examples are only examples of suitable ranges, that is, those skilled in the art can make a selection within a suitable range through the description herein, and are not limited to the specific values exemplified below.
本发明采用高纯度的MgO、Ta2O5、SiO2和B为原料进行制备xMg2SiO4-(1-x)MgTa2O6+y wt%B陶瓷,具体实施例如下。The present invention uses high-purity MgO, Ta 2 O 5 , SiO 2 and B as raw materials to prepare xMg 2 SiO 4 -(1-x)MgTa 2 O 6 +y wt%B ceramics, and specific examples are as follows.
实施例1Example 1
(1)将MgO、Ta2O5、SiO2分别按摩尔比MgO:Ta2O5=1:1和MgO:SiO2=2:1称量,加入氧化锆球和去离子水。球磨1~2小时,将球磨后的原料于干燥箱中烘干后于1100℃煅烧4h合成MgTa2O6和Mg2SiO4;(1) Weigh MgO, Ta 2 O 5 , and SiO 2 in molar ratios of MgO:Ta 2 O 5 =1:1 and MgO:SiO 2 =2:1, respectively, and add zirconia balls and deionized water. Ball mill for 1 to 2 hours, dry the ball-milled raw materials in a drying oven, and then calcinate at 1100°C for 4 hours to synthesize MgTa 2 O 6 and Mg 2 SiO 4 ;
(2)将合成的Mg2SiO4和MgTa2O6按照摩尔分数比为0.4:0.6、0.5:0.5、0.6:0.4、0.7:0.3、0.8:0.2称量放入加入氧化锆球、去离子水球磨罐中,球磨1~2h,烘干后,向粉料中加入质量分数为3%的PVA(聚乙烯醇)作为粘结剂造粒,压制成圆柱状胚体;(2) Weigh the synthesized Mg 2 SiO 4 and MgTa 2 O 6 according to the mole fraction ratio of 0.4:0.6, 0.5:0.5, 0.6:0.4, 0.7:0.3, 0.8:0.2 and add zirconia balls, deionized In the water ball mill tank, ball mill for 1 to 2 hours, after drying, add PVA (polyvinyl alcohol) with a mass fraction of 3% to the powder as a binder to granulate, and press it into a cylindrical embryo body;
(4)把圆柱状胚体在1350℃下保温8h烧结成瓷,即获得所需的复合微波介质陶瓷;(4) Sinter the cylindrical green body at 1350°C for 8 hours to obtain the required composite microwave dielectric ceramics;
(5)用网络分析仪和谐振腔测试步骤(4)制得的复合微波介质陶瓷微波介电性能。具体实施例的相关工艺参数和微波介电性能的测试结果详见表1。(5) Test the microwave dielectric properties of the composite microwave dielectric ceramic prepared in step (4) with a network analyzer and a resonant cavity. See Table 1 for the relevant process parameters and test results of microwave dielectric properties of specific embodiments.
表1为实施例1中涉及的实验结果:Table 1 is the experimental result involved in embodiment 1:
实施例2Example 2
仿照实施例1,在实施例1的基础上选取x=0.6组分,在第(2)步中添加B物质含量为1wt%,其余步骤与实施例1相同,测试结果详见表2。Follow example 1, select x=0.6 component on the basis of example 1, add B substance content in (2) step and be 1wt%, all the other steps are identical with example 1, test result sees table 2 for details.
表2为实施例2中涉及的实验结果:Table 2 is the experimental result involved in embodiment 2:
实施例3Example 3
仿照实施例2,在实施例2的基础上,选取B物质为ZnO,改变B物质的添加量,其余步骤与实施例1相同,测试结果详见表3。Follow example 2, on the basis of example 2, select material B as ZnO, change the amount of material B added, the rest of the steps are the same as in example 1, the test results are shown in Table 3.
表3为实施例3中涉及的实验结果:Table 3 is the experimental result involved in embodiment 3:
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711066157.4A CN107805067B (en) | 2017-11-02 | 2017-11-02 | Low-dielectric-constant microwave dielectric ceramic with zero-frequency temperature coefficient and ultralow loss and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711066157.4A CN107805067B (en) | 2017-11-02 | 2017-11-02 | Low-dielectric-constant microwave dielectric ceramic with zero-frequency temperature coefficient and ultralow loss and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107805067A true CN107805067A (en) | 2018-03-16 |
CN107805067B CN107805067B (en) | 2021-01-12 |
Family
ID=61591088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711066157.4A Active CN107805067B (en) | 2017-11-02 | 2017-11-02 | Low-dielectric-constant microwave dielectric ceramic with zero-frequency temperature coefficient and ultralow loss and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107805067B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108439969A (en) * | 2018-06-29 | 2018-08-24 | 无锡鑫圣慧龙纳米陶瓷技术有限公司 | A kind of low-k temperature-stable microwave-medium and preparation method thereof |
CN109503163A (en) * | 2018-12-20 | 2019-03-22 | 中国科学院上海硅酸盐研究所 | One kind having ultrahigh Q-value tantalic acid magnesium media ceramic and preparation method thereof |
CN113563061A (en) * | 2021-09-26 | 2021-10-29 | 广东康荣高科新材料股份有限公司 | Low dielectric constant dielectric material for single-cavity filter and preparation method thereof |
CN116589270A (en) * | 2023-05-29 | 2023-08-15 | 杭州电子科技大学 | Low-loss temperature-stable olivine type microwave dielectric ceramic and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1195651A (en) * | 1997-04-09 | 1998-10-14 | 阿莫同有限公司 | Dielectric ceramic compositions |
CN103319166A (en) * | 2013-05-28 | 2013-09-25 | 电子科技大学 | Microwave ceramic medium material and preparation method thereof |
-
2017
- 2017-11-02 CN CN201711066157.4A patent/CN107805067B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1195651A (en) * | 1997-04-09 | 1998-10-14 | 阿莫同有限公司 | Dielectric ceramic compositions |
CN103319166A (en) * | 2013-05-28 | 2013-09-25 | 电子科技大学 | Microwave ceramic medium material and preparation method thereof |
Non-Patent Citations (4)
Title |
---|
CHANG JUN JEON等: "Microwave Dielectric Properties of MgTiO3, MgTa2O6 /Polytetrafluoroethylene Composite", 《JOURNAL OF THE KOREAN CERAMIC SOCIETY》 * |
CHENG-LIANG HUANG等: "Structures and dielectric properties of a new dielectric material system xMgTiO3–(1−x)MgTa2O6 at microwave frequency", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
宋开新: "低介电常数微波介质陶瓷", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
王迎军: "《新型材料科学与技术 无机材料卷 中》", 31 October 2016, 华南理工大学出版 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108439969A (en) * | 2018-06-29 | 2018-08-24 | 无锡鑫圣慧龙纳米陶瓷技术有限公司 | A kind of low-k temperature-stable microwave-medium and preparation method thereof |
CN109503163A (en) * | 2018-12-20 | 2019-03-22 | 中国科学院上海硅酸盐研究所 | One kind having ultrahigh Q-value tantalic acid magnesium media ceramic and preparation method thereof |
CN113563061A (en) * | 2021-09-26 | 2021-10-29 | 广东康荣高科新材料股份有限公司 | Low dielectric constant dielectric material for single-cavity filter and preparation method thereof |
CN113563061B (en) * | 2021-09-26 | 2021-12-21 | 广东康荣高科新材料股份有限公司 | Low dielectric constant dielectric material for single-cavity filter and preparation method thereof |
CN116589270A (en) * | 2023-05-29 | 2023-08-15 | 杭州电子科技大学 | Low-loss temperature-stable olivine type microwave dielectric ceramic and preparation method thereof |
CN116589270B (en) * | 2023-05-29 | 2025-04-15 | 杭州电子科技大学 | Low-loss temperature-stable olivine-type microwave dielectric ceramic and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN107805067B (en) | 2021-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102442823B (en) | Microwave dielectric ceramic material and preparation method thereof | |
CN102531570B (en) | Low-temperature sintering microwave dielectric ceramic material with high Q value and preparation method thereof | |
CN101260001A (en) | Novel high-Q microwave dielectric ceramic material and its preparation method | |
CN107805067A (en) | A kind of dielectric constant microwave ceramic medium of zero frequency temperature coefficient and ultra-low loss and preparation method thereof | |
CN110282968A (en) | A kind of microwave dielectric ceramic materials and preparation method thereof | |
CN102219500A (en) | Medium-temperature sintered magnesium titanate-based microwave dielectric ceramics with high quality factor | |
CN107434411A (en) | Low Jie's high quality factor LTCC microwave dielectric materials and preparation method thereof | |
CN101362647A (en) | Lithium-based low-temperature sintered microwave dielectric ceramic material and its preparation | |
CN106542819A (en) | A kind of intermediary's microwave-medium ceramics and preparation method thereof | |
CN107382313B (en) | Microwave dielectric ceramic with ultrahigh quality factor, medium-low dielectric constant and near-zero temperature coefficient and preparation method thereof | |
CN114394827A (en) | Low-dielectric-constant silicate microwave dielectric ceramic and preparation method thereof | |
CN112125668B (en) | Medium low-loss LTCC microwave dielectric ceramic material and preparation method thereof | |
CN102887702A (en) | Low-temperature-sintered lithium-zinc-titanium microwave dielectric ceramic and preparation method thereof | |
CN107188563A (en) | A kind of magnesium zirconium niobium tantalum series microwave dielectric ceramic with high quality factor | |
CN102584232B (en) | A kind of microwave dielectric ceramic and preparation method thereof | |
CN102093053A (en) | New microwave medium ceramic material prepared through middle-temperature sintering | |
CN111377722A (en) | A kind of microwave dielectric ceramic material, microwave dielectric ceramic antenna and preparation method thereof | |
CN100378031C (en) | A low-temperature sintered microwave dielectric ceramic and its preparation method | |
CN112851347A (en) | Low-temperature sintered low-loss oxyfluoride microwave dielectric ceramic and preparation method thereof | |
CN106830919A (en) | Low-temperature sintering wolframite structure microwave-medium ceramics and preparation method thereof | |
CN112174653A (en) | Microwave dielectric ceramic material with high Qf and low dielectric constant and preparation method thereof | |
CN112408977A (en) | High-quality ceramic dielectric material and preparation method thereof | |
CN102850057A (en) | Method for lowering sintering temperature of neodymium niobate microwave dielectric ceramic by using copper oxide as additive | |
CN103951428B (en) | A kind of intermediate sintering temperature temperature-stable ceramics as low-loss microwave medium material | |
KR100842854B1 (en) | Low Temperature Sintered Microwave Dielectric Ceramics and Manufacturing Method Thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |