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CN107785471A - The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic - Google Patents

The method for packing and UVLED base of ceramic encapsulating structures of a kind of UVLED base of ceramic Download PDF

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Publication number
CN107785471A
CN107785471A CN201710738391.0A CN201710738391A CN107785471A CN 107785471 A CN107785471 A CN 107785471A CN 201710738391 A CN201710738391 A CN 201710738391A CN 107785471 A CN107785471 A CN 107785471A
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uvled
ceramic
packaging
ceramic base
metal
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王太保
黄世东
王顾峰
于岩
杨涛
陈开康
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Zhejiang Tc Ceramic Electronic Co Ltd
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Zhejiang Tc Ceramic Electronic Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections

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  • Led Device Packages (AREA)

Abstract

一种UVLED陶瓷基座的封装方法及UVLED陶瓷基座封装结构,属于LED封装领域。封装方法包括:在陶瓷烧结体基板上设置金属层,得到陶瓷金属衬板前体,金属层包括电路连接部以及围绕电路连接部的封装连接部;在封装连接部上设置焊料层,及将封装金属框附于焊料层后进行封接得到UVLED陶瓷基座。UVLED陶瓷基座封装结构是采用前述的封装方法封装而成的。本发明在能够实现对UVLED陶瓷基座的无机封装,避免使用有机封装材料,延长LED器件的使用寿命基础上,低温制备出导电性及导热性均良好的UVLED陶瓷基座,并同时解决了金属层与陶瓷及框体结合力差的问题,从而提高了UVLED陶瓷基座的稳定性及可靠性。

A method for packaging a UVLED ceramic base and a packaging structure for a UVLED ceramic base, belonging to the field of LED packaging. The packaging method includes: setting a metal layer on the ceramic sintered body substrate to obtain a ceramic metal backing board precursor, the metal layer including a circuit connection part and a package connection part surrounding the circuit connection part; arranging a solder layer on the package connection part, and packaging After the metal frame is attached to the solder layer, it is sealed to obtain the UVLED ceramic base. The UVLED ceramic base packaging structure is packaged by the aforementioned packaging method. The invention realizes the inorganic packaging of the UVLED ceramic base, avoids the use of organic packaging materials, and prolongs the service life of the LED device. On the basis of low temperature, the UVLED ceramic base with good electrical conductivity and thermal conductivity is prepared, and at the same time, it solves the problem of metal The problem of poor bonding between the layer and the ceramic and the frame, thereby improving the stability and reliability of the UVLED ceramic base.

Description

一种UVLED陶瓷基座的封装方法及UVLED陶瓷基座封装结构A kind of packaging method of UVLED ceramic base and UVLED ceramic base packaging structure

技术领域technical field

本发明涉及LED封装领域,具体而言,涉及一种UVLED陶瓷基座的封装方法及UVLED陶瓷基座封装结构。The invention relates to the field of LED packaging, in particular to a packaging method for a UVLED ceramic base and a packaging structure for a UVLED ceramic base.

背景技术Background technique

随着LED技术的快速发展以及可见光领域的日趋成熟,短波长的紫外光发光二极管(UV LED)逐渐被广大研究人员所关注,由于其光谱波段集中在紫外范围内,相比传统紫外光源,拥有独一无二的优势,包括功耗低、发光响应快、可靠性高、辐射效率高、寿命长、对环境无污染、结构紧凑等诸多优点,故其具有广阔的市场应用前景,在丝网印刷、聚合物固化、环境保护、白光照明以及军事探测等领域都有重大应用价值。With the rapid development of LED technology and the maturity of the visible light field, short-wavelength ultraviolet light-emitting diodes (UV LEDs) have gradually attracted the attention of researchers. Because their spectral bands are concentrated in the ultraviolet range, compared with traditional ultraviolet light sources, they have Unique advantages, including low power consumption, fast luminous response, high reliability, high radiation efficiency, long life, no pollution to the environment, compact structure and many other advantages, so it has broad market application prospects, in screen printing, polymerization Solidification, environmental protection, white light lighting and military detection and other fields have great application value.

目前LED的主流封装方式是采用有机封装,且主要封装材料多为环氧树脂及硅树脂等有机材料。若对紫外LED而言,由于紫外光波长更短,辐射能量高,这些有机材料受到其长时间照射容易出现老化,从而降低LED芯片的发光效率,影响其使用性能和寿命。目前为了提高UVLED的寿命及使用性能,目前业内主要通过以下两种方式进行改善:一是从光和热等多方面延缓有机材料老化速度,在有机封装材料添加光稳定剂、抗氧剂和热稳定剂等方面来进行改善,但此方法并没有彻底解决根本问题,依然存在LED失效的风险。二、采用无机材料进行封装,现有UVLED陶瓷基座主要通过共烧技术也即 HTCC或LTCC实现,这两种方法虽然能避免有机材料的使用并且气密性较好,但各自依然存在一些工艺上所带来的缺点。At present, the mainstream packaging method of LED is organic packaging, and the main packaging materials are mostly organic materials such as epoxy resin and silicone resin. For ultraviolet LEDs, due to the shorter wavelength of ultraviolet light and high radiation energy, these organic materials are prone to aging when exposed to it for a long time, thereby reducing the luminous efficiency of the LED chip and affecting its performance and life. At present, in order to improve the life and performance of UVLED, the industry mainly improves in the following two ways: one is to delay the aging speed of organic materials from various aspects such as light and heat, and to add light stabilizers, antioxidants and heat to organic packaging materials. However, this method has not completely solved the fundamental problem, and there is still a risk of LED failure. 2. Use inorganic materials for packaging. The existing UVLED ceramic base is mainly realized by co-firing technology, that is, HTCC or LTCC. Although these two methods can avoid the use of organic materials and have better air tightness, there are still some processes in each The disadvantages brought about by the above.

针对HTCC技术:也即在陶瓷粉中添加增塑剂、分散剂、粘结剂等有机成分,配成泥状浆料,用流延法制成生坯;然后依据各层的设计钻导通孔,采用丝网印刷金属浆料进行布线和填孔,最后将各生胚层叠加,最后在1500~1700℃高温下烧结并形成陶瓷基座。For HTCC technology: Add plasticizer, dispersant, binder and other organic components to the ceramic powder to make a muddy slurry, and make a green body by tape casting; then drill through holes according to the design of each layer , using screen printing metal paste for wiring and hole filling, and finally stacking each green layer, and finally sintering at a high temperature of 1500-1700 ° C to form a ceramic base.

针对LTCC技术:与HTCC类似,只是在陶瓷粉中混入30%-50%低熔点玻璃料,使烧结温度降低至850-900℃,因此可以采用导电率更好的铜银等金属作为电极和布线材料。For LTCC technology: similar to HTCC, only 30%-50% low-melting glass frit is mixed into the ceramic powder to reduce the sintering temperature to 850-900°C, so metals such as copper and silver with better conductivity can be used as electrodes and wiring Material.

发明内容Contents of the invention

本发明的目的在于提供一种UVLED陶瓷基座的封装方法,在实现对UVLED陶瓷基座的无机封装基础上,低温制备出导电性及导热性均良好的UVLED陶瓷基座,并解决了金属层与陶瓷及框体结合力差的问题。The purpose of the present invention is to provide a packaging method for UVLED ceramic bases. On the basis of realizing the inorganic packaging of UVLED ceramic bases, UVLED ceramic bases with good electrical and thermal conductivity are prepared at low temperature, and the metal layer is solved. The problem of poor bonding with ceramics and frames.

本发明的另一目的在于提供一种UVLED陶瓷基座封装结构,其能够提高UV LED陶瓷基座的稳定性及可靠性。Another object of the present invention is to provide a UV LED ceramic base packaging structure, which can improve the stability and reliability of the UV LED ceramic base.

本发明的实施例是这样实现的:Embodiments of the present invention are achieved like this:

一种UVLED陶瓷基座的封装方法,其包括:A packaging method for a UVLED ceramic base, comprising:

在陶瓷烧结体基板上设置金属层,得到陶瓷金属衬板前体,金属层包括电路连接部以及围绕电路连接部的封装连接部;A metal layer is arranged on the ceramic sintered body substrate to obtain a ceramic metal liner precursor, the metal layer includes a circuit connection part and a package connection part surrounding the circuit connection part;

在封装连接部上设置焊料层;以及providing a solder layer on the package connection; and

将封装金属框附于焊料层后进行封接。After attaching the packaging metal frame to the solder layer, it is sealed.

一种UVLED陶瓷基座封装结构,其是采用上述的封装方法封装而成的。A UVLED ceramic base packaging structure is packaged by the above-mentioned packaging method.

本发明实施例的有益效果是:The beneficial effects of the embodiments of the present invention are:

1、本发明选用主要成分为低熔点且导电性优异的银或银铜合金作为电路浆料层,并且基板选用陶瓷烧结体基板,无需加入过多低熔点玻璃料来降低烧结温度,导热性提高。故本发明制备UVLED陶瓷基座具有导热性、导电性均良好并且烧结温度低等优点。1. The present invention selects silver or silver-copper alloy with a low melting point and excellent electrical conductivity as the circuit paste layer, and the substrate adopts a ceramic sintered body substrate, without adding too much low melting point glass frit to reduce the sintering temperature and improve thermal conductivity . Therefore, the UVLED ceramic base prepared by the present invention has the advantages of good thermal conductivity and electrical conductivity, and low sintering temperature.

2、本发明通过选用与金属层热膨胀系数相匹配且延展性较好的框体如银、铜等与陶瓷金属衬板进行封接,封接后陶瓷基座残余应力较小,并且封接过程中封装金属框通过与焊料层形成的共晶液相,其能与陶瓷金属衬板得到较好的结合,并形成了致密的整体结构。由此制备UVLED陶瓷基座气密性良好,且金属层与框体及陶瓷烧结体基板结合力均较好,从而提高了UVLED陶瓷基座的稳定性及可靠性。2. The present invention seals the ceramic metal liner with a frame that matches the thermal expansion coefficient of the metal layer and has good ductility, such as silver and copper. After sealing, the residual stress of the ceramic base is small, and the sealing process Through the eutectic liquid phase formed by the metal frame of the middle package and the solder layer, it can be better combined with the ceramic metal liner and form a dense overall structure. The UVLED ceramic base thus prepared has good airtightness, and the bonding force between the metal layer and the frame body and the ceramic sintered body substrate is good, thereby improving the stability and reliability of the UVLED ceramic base.

附图说明Description of drawings

为了更清楚地说明本发明实施例的技术方案,In order to more clearly illustrate the technical solutions of the embodiments of the present invention,

下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。The accompanying drawings that need to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. Ordinary technicians can also obtain other related drawings based on these drawings without paying creative work.

图1为本发明的UVLED陶瓷基座的封装方法的工艺流程图;Fig. 1 is the process flow diagram of the encapsulation method of UVLED ceramic base of the present invention;

图2为本发明的UVLED陶瓷基座封装结构的结构示意图;Fig. 2 is a schematic structural view of the UVLED ceramic base packaging structure of the present invention;

图3为本发明的UVLED陶瓷基座封装结构的陶瓷金属衬板的局部放大图;3 is a partial enlarged view of the ceramic metal liner of the UVLED ceramic base package structure of the present invention;

图4为本发明的UVLED陶瓷基座封装结构在设置LED芯片后的结构示意图;Fig. 4 is a schematic structural view of the UVLED ceramic base packaging structure of the present invention after setting the LED chip;

图5为本发明中实施例1制备的UVLED陶瓷基座气密性测试图片;Fig. 5 is the picture of the airtightness test of the UVLED ceramic base prepared in Example 1 of the present invention;

图6为本发明中实施例1制备UVLED陶瓷基座结合力测试后图片,其中图a为金属层与陶瓷结合力测试后图片,图b为金属层与框体结合力测试后图片。Figure 6 is a picture after the bonding force test of the UVLED ceramic base prepared in Example 1 of the present invention, wherein Figure a is the picture after the metal layer and the ceramic bonding force test, and Figure b is the picture after the metal layer and the frame bonding force test.

图标:100-UVLED陶瓷基座封装结构;110-陶瓷烧结体基板; 120-金属层;121-电路连接部;122-封装连接部;123-第一金属层; 124-第二金属层;130-焊料层;140-封装金属框;150-陶瓷金属衬板; 200-LED芯片;210-导电线。Icon: 100-UVLED ceramic base packaging structure; 110-ceramic sintered body substrate; 120-metal layer; 121-circuit connection part; 122-package connection part; 123-first metal layer; 124-second metal layer; 130 -solder layer; 140-encapsulation metal frame; 150-ceramic metal lining board; 200-LED chip; 210-conductive wire.

需要说明的是,本发明的金属层120在陶瓷烧结体基板110上沿横向划分,金属层120包括电路连接部121和封装连接部122;沿纵向划分,金属层120包括第一金属层123和第二金属层124。因此,也可以理解:电路连接部121和封装连接部122均包括第一金属层 123和第二金属层124。It should be noted that, the metal layer 120 of the present invention is divided laterally on the ceramic sintered body substrate 110, and the metal layer 120 includes a circuit connection part 121 and a package connection part 122; The second metal layer 124 . Therefore, it can also be understood that both the circuit connecting portion 121 and the package connecting portion 122 include the first metal layer 123 and the second metal layer 124 .

具体实施方式Detailed ways

下面将结合实施例对本发明的实施方案进行详细描述,但是本领域技术人员将会理解,下列实施例仅用于说明本发明,而不应视为限制本发明的范围。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。Embodiments of the present invention will be described in detail below in conjunction with examples, but those skilled in the art will understand that the following examples are only for illustrating the present invention, and should not be considered as limiting the scope of the present invention. Those who do not indicate the specific conditions in the examples are carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used were not indicated by the manufacturer, and they were all conventional products that could be purchased from the market.

现有的UVLED陶瓷基座制作工艺主要为共烧技术也即HTCC 或LTCC。发明人在研究中发现,以上工艺存在一定的问题。The existing UVLED ceramic base manufacturing process is mainly co-firing technology, that is, HTCC or LTCC. The inventor found in research that there are certain problems in the above process.

例如,HTCC技术存在烧结温度高,能耗巨大,金属导体材料选择受限且导电性差等缺点,目前导体材料主要为熔点较高的钨、钼、锰等金属及其合金。For example, HTCC technology has disadvantages such as high sintering temperature, huge energy consumption, limited selection of metal conductor materials and poor conductivity. At present, conductor materials are mainly metals such as tungsten, molybdenum, manganese and their alloys with high melting points.

LTCC技术中,由于制备的UVLED陶瓷基座热导率相对较低,且共烧的材料存在匹配性问题,导致其烧结后易变形开裂,使得金属层与陶瓷结合力相对较差(<50N),因而也导致UVLED陶瓷基座应用时可靠性较低。In LTCC technology, due to the relatively low thermal conductivity of the prepared UVLED ceramic base, and the matching problem of the co-fired material, it is easy to deform and crack after sintering, making the bonding force between the metal layer and the ceramic relatively poor (<50N) , which also leads to low reliability in the application of UVLED ceramic bases.

依据现有技术的缺陷,本发明提出一种制作UVLED陶瓷基座封装结构的工艺。Based on the defects of the prior art, the present invention proposes a process for manufacturing a UVLED ceramic base packaging structure.

本发明的一种UVLED陶瓷基座封装结构100的封装方法如图1 所示的工艺流程图,包括以下步骤:The packaging method of a UVLED ceramic base packaging structure 100 of the present invention is a process flow diagram as shown in Figure 1, comprising the following steps:

步骤1:设置金属层120Step 1: Setting Metal Layer 120

在陶瓷烧结体基板110上设置金属层120,获得陶瓷金属衬板150 的前体。陶瓷烧结体基板可为氮化铝陶瓷、氧化铝陶瓷或氮化硅陶瓷,优选设置:氮化铝陶瓷作为陶瓷烧结体基板,陶瓷烧结体基板的形状和厚度均不受限制,只要能够用于制备金属化陶瓷基板即可。金属层 120包括电路连接部121以及围绕电路连接部121的封装连接部122。较佳地,通过印刷方式设置金属层120。其中,印刷可以分一次或多次,如两次、三次、四次以及更多次进行。The metal layer 120 is provided on the ceramic sintered body substrate 110 to obtain a precursor of the ceramic metal backing board 150 . The ceramic sintered body substrate can be aluminum nitride ceramics, alumina ceramics or silicon nitride ceramics. Preferably, aluminum nitride ceramics is used as the ceramic sintered body substrate. The shape and thickness of the ceramic sintered body substrate are not limited, as long as it can be used for The metallized ceramic substrate can be prepared. The metal layer 120 includes a circuit connection portion 121 and a package connection portion 122 surrounding the circuit connection portion 121 . Preferably, the metal layer 120 is provided by printing. Wherein, printing can be divided into one or more times, such as two times, three times, four times and more times.

在一些示例中,印刷设置金属层120是分两次进行的,且印刷工艺可通过以下内容而被限定。In some examples, printing to set the metal layer 120 is performed twice, and the printing process can be defined as follows.

首先,在陶瓷烧结体基板110上进行第一次印刷,印刷的金属浆料为第一金属浆料。Firstly, the first printing is performed on the sintered ceramic substrate 110, and the printed metal paste is the first metal paste.

第一金属浆料包括第一导电成分。第一导电成分包括Ag和Cu 及活性成分,用于在陶瓷烧结体基板110上形成导电层。活性成分包括Ti、Zr和Hf中的至少一种。例如,活性成分为Ti,或者活性成分为Zr,或者活性成分为Hf,或者活性成分为Ti和Hf的混合物,或者活性成分为Ti和Zr的混合物,或者活性成分为Zr和Hf的混合物,或者活性成分为Ti、Zr和Hf的混合物。The first metal paste includes a first conductive composition. The first conductive component includes Ag and Cu and an active component for forming a conductive layer on the ceramic sintered body substrate 110 . The active ingredient includes at least one of Ti, Zr and Hf. For example, the active ingredient is Ti, or the active ingredient is Zr, or the active ingredient is Hf, or the active ingredient is a mixture of Ti and Hf, or the active ingredient is a mixture of Ti and Zr, or the active ingredient is a mixture of Zr and Hf, or The active ingredient is a mixture of Ti, Zr and Hf.

本发明采用的陶瓷烧结体基板110是氮化铝陶瓷,活性成分中的活性元素Ti、Zr或Hf与氮化铝反应形成结合层,例如氮化铝与Ti 反应生成氮化钛,使得金属层120与陶瓷烧结体基板110能够紧密结合。同时,如果使用氧化铝陶瓷烧结体基板,则钛与氧化铝反应生成氧化钛;类似的实施方式还可以是:使用氮化硅陶瓷烧结体基板,则钛与氮化硅反应生成氮化钛和硅化钛。The ceramic sintered body substrate 110 used in the present invention is aluminum nitride ceramics, and the active elements Ti, Zr or Hf in the active component react with aluminum nitride to form a bonding layer, for example, aluminum nitride and Ti react to form titanium nitride, so that the metal layer 120 and the ceramic sintered body substrate 110 can be closely bonded. At the same time, if an alumina ceramic sintered body substrate is used, titanium reacts with alumina to generate titanium oxide; a similar embodiment can also be: using a silicon nitride ceramic sintered body substrate, then titanium reacts with silicon nitride to generate titanium nitride and Titanium silicide.

按质量百分比计,Ag、Cu占第一导电成分总量的95%-98%,活性成分占第一导电成分总量的2%-5%。按照该配比形成的第一金属浆料以及由第一金属浆料形成的第一金属层123,该金属层中的活性成分高温下能够直接与陶瓷烧结体基板110反应形成结合层,从而保证金属层与陶瓷烧结体基板紧密结合。第一金属浆料除上述第一导电成分和活性成分以外,还包括有机粘结剂及有机溶剂等其他有机成分。In terms of mass percentage, Ag and Cu account for 95%-98% of the total amount of the first conductive component, and the active component accounts for 2%-5% of the total amount of the first conductive component. According to the first metal paste formed according to the ratio and the first metal layer 123 formed by the first metal paste, the active components in the metal layer can directly react with the ceramic sintered body substrate 110 at high temperature to form a bonding layer, thereby ensuring The metal layer is tightly combined with the ceramic sintered body substrate. In addition to the above-mentioned first conductive component and active component, the first metal paste also includes other organic components such as an organic binder and an organic solvent.

然后,在第一金属浆料上进行第二次印刷,印刷的金属浆料为第二金属浆料。Then, the second printing is performed on the first metal paste, and the printed metal paste is the second metal paste.

第二金属浆料的粘度小于第一金属浆料的粘度,使得第二金属浆料在陶瓷烧结体基板110上的流动性大于第一金属浆料在陶瓷烧结体基板110上的流动性,从而弥补第一金属浆料在陶瓷烧结体基板 110上形成的小凹坑,使得整个金属层120的表面更加光滑平整。第二金属浆料包括第二导电成分。第二导电成分包括Ag和Cu。第二导电成分的银铜质量比大于第一导电成分的银铜质量比。也即是,第二导电成分中按质量百分比计银所占的比重相对于第一导电成分中大。第二金属浆料除上述第二导电成分以外,还包括有机粘结剂及有机溶剂等其他有机成分。The viscosity of the second metal paste is smaller than the viscosity of the first metal paste, so that the fluidity of the second metal paste on the ceramic sintered body substrate 110 is greater than the fluidity of the first metal paste on the ceramic sintered body substrate 110, thereby The small pits formed on the ceramic sintered body substrate 110 by the first metal paste are made up, so that the surface of the entire metal layer 120 is smoother and more even. The second metal paste includes a second conductive composition. The second conductive composition includes Ag and Cu. The silver-to-copper mass ratio of the second conductive component is greater than the silver-to-copper mass ratio of the first conductive component. That is to say, the weight percentage of silver in the second conductive component is larger than that in the first conductive component. In addition to the above-mentioned second conductive component, the second metal paste also includes other organic components such as an organic binder and an organic solvent.

因此,按照上述方法设置的金属层120在真空烧结后实质包括两层,即由第一金属浆料形成的第一金属层123以及由第二金属浆料形成的第二金属层124。如图3所示,由第一金属浆料制成的第一金属层123设置于陶瓷烧结体基板110的表面。由第二金属浆料制成的第二金属层124设置于第一金属层123的表面。Therefore, the metal layer 120 formed according to the above method substantially includes two layers after vacuum sintering, namely, the first metal layer 123 formed by the first metal paste and the second metal layer 124 formed by the second metal paste. As shown in FIG. 3 , the first metal layer 123 made of the first metal paste is disposed on the surface of the sintered ceramic substrate 110 . The second metal layer 124 made of the second metal paste is disposed on the surface of the first metal layer 123 .

步骤2:设置焊料层130和封装金属框140Step 2: setting the solder layer 130 and the package metal frame 140

在金属层120的封装连接部122上设置焊料层130。焊料层130 也采用印刷的方式设置。焊料层130是由银铜浆料制成的。焊料层 130按质量百分比计包括72~77%的Ag和23~28%的Cu。A solder layer 130 is provided on the package connection portion 122 of the metal layer 120 . The solder layer 130 is also provided by printing. The solder layer 130 is made of silver copper paste. The solder layer 130 includes 72-77% of Ag and 23-28% of Cu in mass percentage.

将封装金属框140附于焊料层130。封装金属框140的材质可以是银或铜,优先设置金属框为Cu,尤其是无氧铜。其能够很好地与陶瓷金属衬板150的前体进行封接匹配。在将封装金属框140附于焊料层130之前对封装金属框140进行预处理,预处理先后包括除油和去氧化步骤,以除去封装金属框140表面的油污及表面的氧化物。A package metal frame 140 is attached to the solder layer 130 . The packaging metal frame 140 can be made of silver or copper, and the metal frame is preferably set to be Cu, especially oxygen-free copper. It is a good sealing match to the precursor of the ceramic metal liner 150 . Before the packaging metal frame 140 is attached to the solder layer 130, the packaging metal frame 140 is pretreated, and the pretreatment includes degreasing and deoxidizing steps to remove oil stains and surface oxides on the packaging metal frame 140 surface.

步骤3:封装金属框140与陶瓷金属衬板150的前体真空封接Step 3: Packaging the metal frame 140 and the precursor of the ceramic metal liner 150 for vacuum sealing

在上述步骤完成之后,将陶瓷金属衬板150的前体以及封装金属框140一起在真空条件下封接。封接温度为780℃-950℃,封接时间为10min-60min。真空条件为真空度高于5×10-2Pa,也即是压力低于5×10-2Pa。After the above steps are completed, the precursor of the ceramic metal backing board 150 and the packaging metal frame 140 are sealed together under vacuum conditions. The sealing temperature is 780°C-950°C, and the sealing time is 10min-60min. The vacuum condition is that the degree of vacuum is higher than 5×10 -2 Pa, that is, the pressure is lower than 5×10 -2 Pa.

在封接过程中,焊料层130与封装金属框140能够形成共晶液相,使得封装金属框140通过设置在陶瓷金属衬板150前体上的焊料层 130与陶瓷金属衬板150的前体得到良好的接触,并形成了致密整体结构,进而使得制备的UVLED陶瓷基座封装结构100具有气密性优良及其各部彼此间结合力优异等优点。During the sealing process, the solder layer 130 and the packaging metal frame 140 can form a eutectic liquid phase, so that the packaging metal frame 140 passes through the solder layer 130 disposed on the precursor of the ceramic metal backing board 150 and the precursor of the ceramic metal backing board 150 A good contact is obtained, and a dense overall structure is formed, so that the prepared UVLED ceramic base packaging structure 100 has the advantages of excellent air tightness and excellent bonding force between each part.

根据上述封装方法制备出的UVLED陶瓷基座封装结构100如图 2所示,UVLED陶瓷基座封装结构100包括陶瓷金属衬板150、焊料层130以及封装金属框140。其中,陶瓷金属衬板150包括陶瓷烧结体基板110和金属层120。金属层120采用印刷的方式设置在陶瓷烧结体基板110的两侧表面。焊料层130设置在金属层120的封装连接部122上。封装金属框140设置在焊料层130上,构成用于封装 LED芯片200的框架结构。The UVLED ceramic base packaging structure 100 prepared according to the above packaging method is shown in FIG. Wherein, the ceramic metal liner 150 includes a ceramic sintered body substrate 110 and a metal layer 120 . The metal layer 120 is disposed on both sides of the sintered ceramic substrate 110 by printing. The solder layer 130 is disposed on the package connection portion 122 of the metal layer 120 . The encapsulating metal frame 140 is disposed on the solder layer 130 to form a frame structure for encapsulating the LED chip 200 .

请参照图3,沿纵向划分,金属层120包括由上述第一金属浆料形成的第一金属层123以及由第二金属浆料形成的第二金属层124。第一金属层123设置在陶瓷烧结体基板110的两侧表面,第二金属层 124设置在第一金属层123的表面。Referring to FIG. 3 , divided vertically, the metal layer 120 includes a first metal layer 123 formed by the above-mentioned first metal paste and a second metal layer 124 formed by the second metal paste. The first metal layer 123 is provided on both surfaces of the ceramic sintered body substrate 110, and the second metal layer 124 is provided on the surface of the first metal layer 123.

请参照图4,LED芯片200设置在金属层120的电路连接部121 上,并且LED芯片200通过导电线210与金属层120的电路连接部 121连接。LED芯片200是紫外光LED芯片。Referring to FIG. 4 , the LED chip 200 is disposed on the circuit connection portion 121 of the metal layer 120 , and the LED chip 200 is connected to the circuit connection portion 121 of the metal layer 120 through a conductive wire 210 . The LED chip 200 is an ultraviolet LED chip.

需要说明的是,本发明的金属层120并非是设置在陶瓷烧结体基板上连续的层结构,而是根据所需电路图形呈现出电路图案,因此,金属层120的电路连接部121和封装连接部122可连续、可不连续,本发明对此没有限制。金属层120的电路连接部121主要指金属层120的用于设置LED芯片200以及导电线210的部分。金属层120 的封装连接部122主要指金属层120的用于设置焊料层130以及封装金属框140的部分。It should be noted that the metal layer 120 of the present invention is not a continuous layer structure disposed on the ceramic sintered body substrate, but presents a circuit pattern according to the required circuit pattern. Therefore, the circuit connection part 121 of the metal layer 120 is connected to the package. The portion 122 may be continuous or discontinuous, and the present invention is not limited thereto. The circuit connection portion 121 of the metal layer 120 mainly refers to the portion of the metal layer 120 where the LED chip 200 and the conductive wire 210 are disposed. The package connection part 122 of the metal layer 120 mainly refers to the part of the metal layer 120 where the solder layer 130 and the package metal frame 140 are disposed.

通过上述封装方法的UVLED陶瓷基座气密性良好,同时具有烧结温度低、导电性和导热性均较好、金属层与框体及陶瓷烧结体基板结合力均较好等优点,从而提高了其后续应用时的稳定性及可靠性。The UVLED ceramic base through the above packaging method has good airtightness, and has the advantages of low sintering temperature, good electrical conductivity and thermal conductivity, and good bonding force between the metal layer and the frame body and the ceramic sintered substrate. The stability and reliability of its subsequent application.

下面结合实施例对本发明进一步说明。Below in conjunction with embodiment the present invention is further described.

实施例1Example 1

选取114.3mm×114.3mm的氮化铝陶瓷烧结体基板110对其表面进行超声波清洗处理后待用。通过第一次印刷将第一金属浆料印刷在陶瓷烧结体基板110表面上,形成第一金属层123。通过第二次印刷将第二金属浆料印刷在由第一金属浆料形成的第一金属层123上,形成第二金属层124。通过第一次印刷和第二次印刷,在陶瓷烧结体基板110上设置金属层120,从而获得陶瓷金属衬板150的前体。An aluminum nitride ceramic sintered body substrate 110 with a size of 114.3mm×114.3mm is selected for use after ultrasonic cleaning treatment is performed on its surface. The first metal paste is printed on the surface of the sintered ceramic substrate 110 through the first printing to form the first metal layer 123 . The second metal paste is printed on the first metal layer 123 formed of the first metal paste by the second printing to form the second metal layer 124 . Through the first printing and the second printing, the metal layer 120 is provided on the ceramic sintered body substrate 110 , thereby obtaining a precursor of the ceramic metal backing plate 150 .

在金属层120的封装连接部122上设置焊料层130。焊料层130 的设置也采用印刷的方式,其中,焊料层130按质量百分比计包括 72%的Ag以及28%的Cu。A solder layer 130 is provided on the package connection portion 122 of the metal layer 120 . The setting of the solder layer 130 is also by printing, wherein the solder layer 130 includes 72% Ag and 28% Cu by mass percentage.

在本实施例中,封装金属框140是由无氧铜制成的。对封装金属框140进行预处理。具体为,预处理先后包括除油及去氧化处理,也即先利用重油清洗剂对封装金属框140进行除油处理。其次,在室温 (20℃-30℃)下,使用质量分数为10wt%的硫酸溶液浸泡3min进行去氧化处理,去除铜箔表面的氧化物,然后吹干,除去铜箔表面的杂质。然后将经预处理后材质为无氧铜的封装金属框140附于焊料层 130。In this embodiment, the packaging metal frame 140 is made of oxygen-free copper. Pretreatment is performed on the packaging metal frame 140 . Specifically, the pretreatment successively includes degreasing and deoxidizing treatment, that is, degreasing treatment is first performed on the packaging metal frame 140 with a heavy oil cleaning agent. Secondly, at room temperature (20°C-30°C), soak in a sulfuric acid solution with a mass fraction of 10wt% for 3 minutes for deoxidation treatment to remove oxides on the surface of the copper foil, and then blow dry to remove impurities on the surface of the copper foil. Then, the package metal frame 140 made of oxygen-free copper after pretreatment is attached to the solder layer 130 .

最后,将陶瓷金属衬板150的前体和封装金属框140在真空条件下进行封接。封接温度为850℃,封接时间为30min,真空度为1× 10-3Pa。Finally, the precursor of the ceramic metal backing board 150 and the packaging metal frame 140 are sealed under vacuum conditions. The sealing temperature is 850°C, the sealing time is 30 minutes, and the vacuum degree is 1×10 -3 Pa.

由此,便制得本发明的UVLED氮化铝陶瓷基座封装结构,进而对其进行相关测试,测试结果见表1。Thus, the UVLED aluminum nitride ceramic base packaging structure of the present invention was prepared, and then related tests were performed on it. The test results are shown in Table 1.

实施例2Example 2

除封装金属框为Ag框,预处理工序中往重油清洗剂添加3-5g 高目数氧化铝抛光粉,同时实现除油及去氧化处理之外,其他与实施例1一样。由此,便制得本发明的UVLED氮化铝陶瓷基座封装结构,进而对其进行相关测试,测试结果见表1。Except that the packaging metal frame is an Ag frame, 3-5g of high-mesh aluminum oxide polishing powder is added to the heavy oil cleaning agent in the pretreatment process, and the degreasing and deoxidizing treatment are realized at the same time, the others are the same as in Example 1. Thus, the UVLED aluminum nitride ceramic base packaging structure of the present invention was prepared, and then related tests were performed on it. The test results are shown in Table 1.

实施例3Example 3

除陶瓷烧结体基板材质为氧化铝之外,其他与实施例1一样。Except that the material of the ceramic sintered body substrate is alumina, the others are the same as in Embodiment 1.

由此,便制得本发明的UVLED陶瓷基座封装结构,进而对其进行相关测试,测试结果见表1。Thus, the UVLED ceramic base packaging structure of the present invention was prepared, and then related tests were performed on it. The test results are shown in Table 1.

比较例1Comparative example 1

除封装金属框为铁镍合金框,预处理工序仅包括除油步骤之外,其他与实施例1一样。Except that the packaging metal frame is an iron-nickel alloy frame, and the pretreatment process only includes the degreasing step, the others are the same as in Embodiment 1.

由此,便制得UVLED氮化铝陶瓷基座,进而对其进行相关测试,测试结果见表1。In this way, the UVLED aluminum nitride ceramic base was prepared, and then related tests were carried out. The test results are shown in Table 1.

比较例2Comparative example 2

选用市售的低温共烧技术(LTCC)制备的UVLED氧化铝陶瓷基座,进而对其进行相关测试,测试结果见表1。The commercially available low temperature co-firing technology (LTCC) was used to prepare the UVLED alumina ceramic base, and then related tests were carried out on it. The test results are shown in Table 1.

比较例3Comparative example 3

选用市售的高温共烧技术(HTCC)制备的UVLED氧化铝陶瓷基座,进而对其进行相关测试,测试结果见表1。The commercially available UVLED alumina ceramic base prepared by high-temperature co-firing technology (HTCC) was selected, and then relevant tests were carried out on it. The test results are shown in Table 1.

UVLED陶瓷基座评价:Evaluation of UVLED ceramic base:

1)气密性评价:1) Air tightness evaluation:

常温下在UVLED陶瓷基座中封装框内滴红墨水,滴定时既要保证红墨水与框内壁四周接触,也要禁止其从框上表面溢出;滴红墨水后静置2h,观察其渗透情况。At room temperature, drip red ink in the UVLED ceramic base package frame. When titrating, it is necessary to ensure that the red ink is in contact with the inner wall of the frame and prevent it from overflowing from the upper surface of the frame. After dripping the red ink, let it stand for 2 hours to observe its penetration. .

2)结合力评价2) Evaluation of binding ability

a.金属层与陶瓷烧结体基板a. Metal layer and ceramic sintered body substrate

利用焊锡片(Φ2mm)将T针与金属层方块(2*2mm)焊接在一起,然后采用电子万能拉力试验机(鑫鸿XDL-500N) 将T针从陶瓷金化基板上拉脱,得到的拉力值(N),并观察其分离现象,样品测试数量为20pcs。若金属层与陶瓷分离,结合力NG则评价为“×”;若金属层与陶瓷混合分离,则结合力OK,则评价为“○”。然后统计各分离状态数量作为评价结果。Use a solder sheet (Φ2mm) to weld the T-pin and the metal layer square (2*2mm), and then use an electronic universal tensile testing machine (Xinhong XDL-500N) to pull the T-pin off the ceramic gold substrate. Tensile force value (N), and observe its separation phenomenon, the sample test quantity is 20pcs. If the metal layer is separated from the ceramics, the bonding strength is NG, and the evaluation is "×"; if the metal layer and the ceramics are mixed and separated, the bonding force is OK, and the evaluation is "○". Then count the number of each separation state as the evaluation result.

b.金属层与框体b. Metal layer and frame

框体剥离后利用体视显微镜观察其与陶瓷烧结体基板的各自分离状态,样品测试数量为100pcs。若框体与陶瓷烧结体基板上金属层分离则金属层与框体间结合力差,评价为“×”;若框体与陶瓷烧结体基板呈混合分离,也即基板表面陶瓷被剥离,金属层与框体间结合力优异,则评价为“○”。若以上两种分离状态均存在,则结合力一般,评价为“△”,然后统计各分离状态数量作为评价结果。After the frame was peeled off, its separation state from the ceramic sintered body substrate was observed with a stereo microscope, and the number of samples tested was 100pcs. If the frame is separated from the metal layer on the sintered ceramic substrate, the bonding force between the metal layer and the frame is poor, and the evaluation is "×"; When the bonding force between the layer and the frame was excellent, it was evaluated as "◯". If both of the above two separation states exist, the binding force is average, and the evaluation is "△", and then the number of each separation state is counted as the evaluation result.

3)耐冷热冲击性能评价3) Evaluation of cold and heat shock resistance

采用型号TSG-71S-A型温度冲击试验箱,将UVLED陶瓷基座样品从-40℃升到125℃,用时6min,然后从125℃降到-40℃,用时 4min,再将样品从-40℃升到125℃,用时6min,如此循环,每50次循环目视观察样品是否出现裂纹或剥离。Using the model TSG-71S-A temperature shock test chamber, the UVLED ceramic base sample was raised from -40°C to 125°C for 6 minutes, then dropped from 125°C to -40°C for 4 minutes, and then the sample was raised from -40°C The temperature is raised to 125°C for 6 minutes, and this cycle is repeated, and the sample is visually observed for cracks or peeling every 50 cycles.

表1.测试结果Table 1. Test Results

由上表可知,本发明中实施例制备的陶瓷基座2h后红墨水无渗透,也即气密性全部OK,具体见图5。而比较例1制备的陶瓷基座2h后红墨水存在渗透现象。这主要是因为其框体为可伐合金,其与金属层热膨胀系数匹配性及延展性均相对较差,在烧结时易产生较大残余应力,从而导致其与陶瓷金属衬板结合欠佳,影响了UVLED陶瓷基座气密性及可靠性。It can be seen from the above table that the ceramic base prepared in the embodiment of the present invention has no red ink penetration after 2 hours, that is, the airtightness is all OK, see Figure 5 for details. However, the red ink permeated the ceramic base prepared in Comparative Example 1 after 2 hours. This is mainly because the frame is made of Kovar alloy, which has relatively poor thermal expansion coefficient matching and ductility with the metal layer. It is easy to generate large residual stress during sintering, which leads to poor bonding with the ceramic metal lining. It affects the airtightness and reliability of the UVLED ceramic base.

对各组陶瓷基座进行结合力测试,将金属层与陶瓷基板及框体剥离后,除了比较例1,其他各组分离状态全部均为混合分离。另外还可以看出相对比较例2、3制备的陶瓷基座,本发明实施例制备陶瓷基座的金属层与陶瓷基板剥离后拉力值较大,其值均远大于100N,说明本发明金属层与陶瓷基板及框体结合力均优异,具体见图6。The bonding strength of each group of ceramic bases was tested. After the metal layer was peeled off from the ceramic substrate and the frame, except for Comparative Example 1, the separation states of the other groups were all mixed and separated. In addition, it can also be seen that compared with the ceramic bases prepared in Comparative Examples 2 and 3, the tensile force value after the metal layer of the ceramic base prepared in the embodiment of the present invention is peeled off from the ceramic substrate is relatively large, and the values are all much greater than 100N, indicating that the metal layer of the present invention Excellent bonding force with ceramic substrate and frame, see Figure 6 for details.

对各组陶瓷基座进行耐热冲击测试,结果显示各实施例制备的陶瓷基座耐热冲击性较好,均大于2000次,而其他比较例制备的陶瓷基座均小于800次。说明本发明制备的UVLED陶瓷基座可靠性较高。The thermal shock resistance test was carried out on each group of ceramic bases, and the results showed that the thermal shock resistance of the ceramic bases prepared in each example was better than 2000 times, while the ceramic bases prepared in other comparative examples were less than 800 times. It shows that the reliability of the UVLED ceramic base prepared by the present invention is high.

另外本发明选用主要成分为银铜合金作为电路浆料层,相对比较例3选用的钨浆料,其具有更低的熔点且更高的导电性。其次在比较例2陶瓷基座制备工艺中,生坯片和金属浆料的烧结是同时进行的,为了降低生坯的烧结温度,往往需要在生坯中过多低熔点玻璃料,这会大大降低陶瓷基座的导热性。而本发明中选用的基板为陶瓷烧结体基板,也即生坯片和金属浆料的烧结是逐次进行,无需往生坯中加入低熔点玻璃料,其导热性更高。因此可以得出,本发明UVLED陶瓷基座同时具有较高的导电性和导热性,并且烧结温度低等优点。In addition, the present invention uses silver-copper alloy as the circuit paste layer, which has a lower melting point and higher conductivity than the tungsten paste used in Comparative Example 3. Secondly, in the preparation process of the ceramic base of Comparative Example 2, the sintering of the green sheet and the metal paste is carried out at the same time. In order to reduce the sintering temperature of the green body, it is often necessary to add too much low-melting glass frit in the green body, which will greatly Reduce the thermal conductivity of the ceramic base. However, the substrate selected in the present invention is a ceramic sintered body substrate, that is, the sintering of the green sheet and the metal paste is carried out successively, and there is no need to add low-melting point glass frit to the green body, and its thermal conductivity is higher. Therefore, it can be concluded that the UVLED ceramic base of the present invention has the advantages of high electrical conductivity and thermal conductivity, and low sintering temperature.

以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1.一种UVLED陶瓷基座的封装方法,其特征在于,其包括:1. A packaging method for a UVLED ceramic base, characterized in that it comprises: 在陶瓷烧结体基板上设置金属层,得到陶瓷金属衬板前体,所述金属层包括电路连接部以及围绕所述电路连接部的封装连接部;A metal layer is arranged on the ceramic sintered body substrate to obtain a ceramic metal backing board precursor, the metal layer includes a circuit connection part and a packaging connection part surrounding the circuit connection part; 在所述封装连接部上设置焊料层;以及providing a solder layer on the package connection; and 将封装金属框附于所述焊料层后进行封接。Sealing is performed after attaching the package metal frame to the solder layer. 2.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,所述陶瓷烧结体基板为氮化铝陶瓷、氧化铝陶瓷或氮化硅陶瓷。2. The packaging method of the UVLED ceramic base according to claim 1, wherein the ceramic sintered body substrate is aluminum nitride ceramics, alumina ceramics or silicon nitride ceramics. 3.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,采用印刷的方式在所述陶瓷烧结体基板上设置所述金属层。3. The packaging method of the UVLED ceramic base according to claim 1, wherein the metal layer is provided on the ceramic sintered body substrate by printing. 4.根据权利要求3所述的UVLED陶瓷基座的封装方法,其特征在于,在所述陶瓷烧结体基板上印刷所述金属层包括第一次印刷和第二次印刷。4. The packaging method of the UVLED ceramic base according to claim 3, wherein printing the metal layer on the ceramic sintered body substrate comprises first printing and second printing. 5.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,采用印刷的方式在所述封装连接部上设置所述焊料层。5. The packaging method of the UVLED ceramic base according to claim 1, characterized in that, the solder layer is provided on the packaging connection part by printing. 6.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,所述金属层及焊料层的成分均包括银或银铜合金。6. The packaging method of the UVLED ceramic base according to claim 1, wherein the components of the metal layer and the solder layer both include silver or a silver-copper alloy. 7.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,所述封装金属框的材质是银或铜。7. The packaging method of the UVLED ceramic base according to claim 1, wherein the packaging metal frame is made of silver or copper. 8.根据权利要求1至7中任一项所述的UVLED陶瓷基座的封装方法,其特征在于,所述焊料层按质量百分比计包括72~77%的Ag和23~28%的Cu。8. The method for packaging UVLED ceramic bases according to any one of claims 1 to 7, wherein the solder layer comprises 72-77% Ag and 23-28% Cu by mass percentage. 9.根据权利要求1所述的UVLED陶瓷基座的封装方法,其特征在于,设置在所述焊料层上的封装金属框与陶瓷金属衬板前体之间的封接是在真空条件下进行的,且封接温度为780℃-950℃,封接时间为10min-60min。9. The encapsulation method of UVLED ceramic base according to claim 1, is characterized in that, the sealing between the encapsulation metal frame that is arranged on the described solder layer and the ceramic metal liner precursor is carried out under vacuum condition , and the sealing temperature is 780°C-950°C, and the sealing time is 10min-60min. 10.一种UVLED陶瓷基座封装结构,其特征在于,所述UVLED陶瓷基座封装结构是采用如权利要求1至9中任一项所述的封装方法封装而成的。10. A UVLED ceramic base packaging structure, characterized in that the UVLED ceramic base packaging structure is packaged by the packaging method according to any one of claims 1 to 9.
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