CN107785455A - A kind of solar-grade polysilicon piece surface treatment method - Google Patents
A kind of solar-grade polysilicon piece surface treatment method Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 79
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004381 surface treatment Methods 0.000 title claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 50
- 229910052580 B4C Inorganic materials 0.000 claims abstract description 12
- 239000002253 acid Substances 0.000 claims abstract description 12
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 12
- 150000003839 salts Chemical class 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229960002050 hydrofluoric acid Drugs 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 61
- 239000000243 solution Substances 0.000 description 16
- 239000002585 base Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及太阳能级半导体单晶硅片加工领域，尤其涉及一种太阳能级多晶硅片表面处理方法。The invention relates to the field of processing solar-grade semiconductor monocrystalline silicon wafers, in particular to a surface treatment method for solar-grade polycrystalline silicon wafers.
背景技术Background technique
在太阳能级半导体单晶硅片加工过程中，经线锯开方生成的多晶硅片由于表面粗糙，且线痕严重，不能直接对其进行切片。During the processing of solar-grade semiconductor monocrystalline silicon wafers, the polycrystalline silicon wafers produced by wire sawing cannot be sliced directly due to their rough surface and serious line marks.
在对多晶硅片进行切片之前，需要先对多晶硅片表面的线痕进行处理，现有专利201110121543.5，公开了一种太阳能级多晶硅片表面处理方法，使用金钢石磨轮对多晶硅片表面进行物理法机械研磨处理，以除去多晶硅片表面的线痕。然而在处理多晶硅片表面线痕时会在多晶硅片表面形成新的损伤层，容易导致切片后单晶硅片边缘产生蹦边等缺陷和不良，其采用碱腐蚀的方法对该损伤层进行腐蚀，但其在进行腐蚀时，容易造成硅片边缘有腐蚀坑，使得硅片应力不集中，硬度较差。Before slicing polycrystalline silicon wafers, it is necessary to process the line marks on the surface of polycrystalline silicon wafers. The existing patent 201110121543.5 discloses a surface treatment method for solar-grade polycrystalline silicon wafers. The surface of polycrystalline silicon wafers is subjected to physical and mechanical processing using a diamond grinding wheel. Grinding treatment to remove line marks on the surface of polysilicon wafers. However, a new damage layer will be formed on the surface of the polysilicon wafer when dealing with line marks on the surface of the polysilicon wafer, which will easily lead to defects and defects such as edge jumping on the edge of the monocrystalline silicon wafer after slicing. The method of alkali etching is used to corrode the damaged layer. However, when it is etched, it is easy to cause corrosion pits on the edge of the silicon wafer, so that the stress of the silicon wafer is not concentrated and the hardness is poor.
发明内容Contents of the invention
发明目的：为了克服现有技术中存在的不足，本发明提供一种硬度高，表面光滑的太阳能级多晶硅片表面处理方法。Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a surface treatment method for solar-grade polysilicon wafers with high hardness and smooth surface.
技术方案：为实现上述目的，本发明采用的技术方案为：Technical scheme: in order to achieve the above object, the technical scheme adopted in the present invention is:
一种太阳能级多晶硅片表面处理方法，包括以下步骤：A method for treating the surface of a solar-grade polysilicon wafer, comprising the following steps:
步骤1，采用粒度直径在12-16nm的粗碳化硼对多晶硅片表面进行机械粗研磨；Step 1, using coarse boron carbide with a particle size diameter of 12-16nm to perform rough mechanical grinding on the surface of the polycrystalline silicon wafer;
步骤2，采用粒度直径在1.5-2.5nm的细碳化硼对经过粗研磨的多晶硅片表面进行机械细研磨；Step 2, using fine boron carbide with a particle size diameter of 1.5-2.5 nm to perform mechanical fine grinding on the surface of the roughly ground polysilicon wafer;
步骤3，将经过细研磨后的多晶硅片中放入抛光液中进行腐蚀抛光，去除步骤2中多晶硅片表面的研磨产生的损伤层；Step 3, putting the finely ground polysilicon wafer into a polishing solution for etching and polishing, and removing the damaged layer produced by grinding the surface of the polysilicon wafer in step 2;
步骤4，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 4, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤5，将步骤4得到的多晶硅片放入旋转桶内进行边缘抛光；Step 5, putting the polysilicon wafer obtained in step 4 into a rotating bucket for edge polishing;
步骤6，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 6, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤7，对步骤6得到的多晶硅片进行清洗和烘干。Step 7, cleaning and drying the polysilicon wafer obtained in step 6.
所述抛光液为硝酸、氢氟酸、磷酸的混合液。The polishing solution is a mixed solution of nitric acid, hydrofluoric acid and phosphoric acid.
优选的：所述硝酸、氢氟酸、醋酸的质量比为4.5：3.5：8。Preferably: the mass ratio of nitric acid, hydrofluoric acid and acetic acid is 4.5:3.5:8.
优选的：所述步骤1中的粗研磨时间为20-30分钟。Preferably: the coarse grinding time in the step 1 is 20-30 minutes.
优选的：所述步骤2中的细研磨时间10-20分钟。Preferably: the fine grinding time in the step 2 is 10-20 minutes.
优选的：所述步骤3中每面的腐蚀厚度在0.03-0.05毫米。Preferably: the corrosion thickness of each surface in step 3 is 0.03-0.05 mm.
优选的：所述步骤5中旋转桶内设置有抛光衬垫和抛光液。Preferably: in the step 5, a polishing pad and a polishing liquid are arranged in the rotating barrel.
有益效果：本发明提供的一种太阳能级多晶硅片表面处理方法方法对经线锯切割生成的多晶硅片表面进行处理，不仅通过机械研磨消除了切割留下的线痕，而且通过抛光液蚀除去了多晶硅片表面的损伤层，另外对多晶硅片进行边缘抛光，使得其应力集中，硅片更为坚固。Beneficial effects: The method for treating the surface of a solar-grade polysilicon wafer provided by the present invention treats the surface of the polysilicon wafer cut by a wire saw, not only eliminating the line marks left by the cutting through mechanical grinding, but also removing the polysilicon through polishing liquid erosion In addition, the edge of the polysilicon wafer is polished to concentrate the stress and make the silicon wafer stronger.
具体实施方式Detailed ways
下面结合具体实施例，进一步阐明本发明，应理解这些实例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with specific embodiment, further illustrate the present invention, should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand the various equivalent forms of the present invention All modifications fall within the scope defined by the appended claims of this application.
实施例1Example 1
一种太阳能级多晶硅片表面处理方法，包括以下步骤：A method for treating the surface of a solar-grade polysilicon wafer, comprising the following steps:
步骤1，采用粒度直径在12nm的粗碳化硼对多晶硅片表面进行机械粗研磨；粗研磨时间为30分钟。In step 1, coarse boron carbide with a particle size diameter of 12nm is used to perform rough mechanical grinding on the surface of the polycrystalline silicon wafer; the rough grinding time is 30 minutes.
步骤2，采用粒度直径在2.5nm的细碳化硼对经过粗研磨的多晶硅片表面进行机械细研磨；细研磨时间10分钟。In step 2, mechanical fine grinding is carried out on the surface of the roughly ground polysilicon wafer by using fine boron carbide with a particle size diameter of 2.5 nm; the fine grinding time is 10 minutes.
步骤3，将经过细研磨后的多晶硅片中放入抛光液中进行腐蚀抛光，去除步骤2中多晶硅片表面的研磨产生的损伤层；所述抛光液为硝酸、氢氟酸、磷酸的混合液。所述硝酸、氢氟酸、醋酸的质量比为4.5：3.5：8。每面的腐蚀厚度在0.05毫米。Step 3, put the finely ground polysilicon wafer into a polishing solution for corrosion polishing, and remove the damaged layer produced by grinding the surface of the polysilicon wafer in step 2; the polishing solution is a mixed solution of nitric acid, hydrofluoric acid, and phosphoric acid . The mass ratio of nitric acid, hydrofluoric acid and acetic acid is 4.5:3.5:8. The thickness of the corrosion on each side is 0.05mm.
步骤4，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 4, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤5，将步骤4得到的多晶硅片放入旋转桶内进行边缘抛光；旋转桶内设置有抛光衬垫和抛光液，完成对多晶硅片的边缘抛光。Step 5, putting the polysilicon wafer obtained in step 4 into a rotating barrel for edge polishing; a polishing pad and a polishing liquid are arranged in the rotating barrel to complete the edge polishing of the polysilicon wafer.
步骤6，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 6, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤7，对步骤6得到的多晶硅片进行清洗和烘干。Step 7, cleaning and drying the polysilicon wafer obtained in step 6.
实施例2。Example 2.
一种太阳能级多晶硅片表面处理方法，包括以下步骤：A method for treating the surface of a solar-grade polysilicon wafer, comprising the following steps:
步骤1，采用粒度直径在16nm的粗碳化硼对多晶硅片表面进行机械粗研磨；粗研磨时间为20分钟。In step 1, coarse boron carbide with a particle size diameter of 16nm is used to perform mechanical rough grinding on the surface of the polycrystalline silicon wafer; the rough grinding time is 20 minutes.
步骤2，采用粒度直径在1.5nm的细碳化硼对经过粗研磨的多晶硅片表面进行机械细研磨；细研磨时间20分钟。In step 2, mechanical fine grinding is carried out on the surface of the roughly ground polysilicon wafer by using fine boron carbide with a particle size diameter of 1.5 nm; the fine grinding time is 20 minutes.
步骤3，将经过细研磨后的多晶硅片中放入抛光液中进行腐蚀抛光，去除步骤2中多晶硅片表面的研磨产生的损伤层；所述抛光液为硝酸、氢氟酸、磷酸的混合液。所述硝酸、氢氟酸、醋酸的质量比为4.5：3.5：8。每面的腐蚀厚度在0.05毫米。Step 3, put the finely ground polysilicon wafer into a polishing solution for corrosion polishing, and remove the damaged layer produced by grinding the surface of the polysilicon wafer in step 2; the polishing solution is a mixed solution of nitric acid, hydrofluoric acid, and phosphoric acid . The mass ratio of nitric acid, hydrofluoric acid and acetic acid is 4.5:3.5:8. The thickness of the corrosion on each side is 0.05mm.
步骤4，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 4, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤5，将步骤4得到的多晶硅片放入旋转桶内进行边缘抛光；旋转桶内设置有抛光衬垫和抛光液，完成对多晶硅片的边缘抛光。Step 5, putting the polysilicon wafer obtained in step 4 into a rotating barrel for edge polishing; a polishing pad and a polishing liquid are arranged in the rotating barrel to complete the edge polishing of the polysilicon wafer.
步骤6，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 6, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤7，对步骤6得到的多晶硅片进行清洗和烘干。Step 7, cleaning and drying the polysilicon wafer obtained in step 6.
该方法不仅通过机械研磨消除了切割留下的线痕，而且通过抛光液蚀除去了多晶硅片表面的损伤层，另外对多晶硅片进行边缘抛光，使得其应力集中，硅片更为坚固。This method not only eliminates the line marks left by cutting through mechanical grinding, but also removes the damaged layer on the surface of the polycrystalline silicon wafer through polishing liquid etching, and polishes the edge of the polycrystalline silicon wafer so that its stress is concentrated and the silicon wafer is stronger.
实施例3。Example 3.
一种太阳能级多晶硅片表面处理方法，包括以下步骤：A method for treating the surface of a solar-grade polysilicon wafer, comprising the following steps:
步骤1，采用粒度直径在14nm的粗碳化硼对多晶硅片表面进行机械粗研磨；粗研磨时间为25分钟。In step 1, coarse boron carbide with a particle size diameter of 14nm is used to perform rough mechanical grinding on the surface of the polycrystalline silicon wafer; the rough grinding time is 25 minutes.
步骤2，采用粒度直径在2nm的细碳化硼对经过粗研磨的多晶硅片表面进行机械细研磨；细研磨时间15分钟。Step 2: mechanically finely grind the surface of the roughly ground polysilicon wafer with fine boron carbide with a particle size diameter of 2 nm; the fine grinding time is 15 minutes.
步骤3，将经过细研磨后的多晶硅片中放入抛光液中进行腐蚀抛光，去除步骤2中多晶硅片表面的研磨产生的损伤层；所述抛光液为硝酸、氢氟酸、磷酸的混合液。所述硝酸、氢氟酸、醋酸的质量比为4.5：3.5：8。每面的腐蚀厚度在0.04毫米。Step 3, put the finely ground polysilicon wafer into a polishing solution for corrosion polishing, and remove the damaged layer produced by grinding the surface of the polysilicon wafer in step 2; the polishing solution is a mixed solution of nitric acid, hydrofluoric acid, and phosphoric acid . The mass ratio of nitric acid, hydrofluoric acid and acetic acid is 4.5:3.5:8. The thickness of the corrosion on each side is 0.04mm.
步骤4，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 4, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤5，将步骤4得到的多晶硅片放入旋转桶内进行边缘抛光；旋转桶内设置有抛光衬垫和抛光液，完成对多晶硅片的边缘抛光。Step 5, putting the polysilicon wafer obtained in step 4 into a rotating barrel for edge polishing; a polishing pad and a polishing liquid are arranged in the rotating barrel to complete the edge polishing of the polysilicon wafer.
步骤6，用强碱弱酸盐对步骤3得到的多晶硅片表面表面残留的抛光液中和掉；Step 6, using a strong base and a weak acid salt to neutralize the remaining polishing solution on the surface of the polycrystalline silicon wafer obtained in step 3;
步骤7，对步骤6得到的多晶硅片进行清洗和烘干。Step 7, cleaning and drying the polysilicon wafer obtained in step 6.
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications are also possible. It should be regarded as the protection scope of the present invention.
Claims (6)
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| CN201610731965.7A Pending CN107785455A (en) | 2016-08-26 | 2016-08-26 | A kind of solar-grade polysilicon piece surface treatment method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114701083A (en) * | 2022-06-06 | 2022-07-05 | 广东高景太阳能科技有限公司 | Silicon wafer cutting raw material processing method, system, medium and equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114701083A (en) * | 2022-06-06 | 2022-07-05 | 广东高景太阳能科技有限公司 | Silicon wafer cutting raw material processing method, system, medium and equipment |
| CN114701083B (en) * | 2022-06-06 | 2022-08-05 | 广东高景太阳能科技有限公司 | Silicon wafer cutting raw material processing method, system, medium and equipment |
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Application publication date: 20180309 |