CN107785407A - A kind of OLED display panel and display device - Google Patents

Abstract

The invention discloses a kind of OLED display panel and display device, to increase the aperture opening ratio of OLED display panel.The OLED display panel, including：Underlay substrate；The thin film transistor (TFT) being arranged on the underlay substrate, and the power supply voltage signal line electrically connected with the thin film transistor (TFT)；The OLED luminescent devices being arranged on the thin film transistor (TFT), and the storage capacitance electrically connected with the power supply voltage signal line；Orthographic projection of the storage capacitance on the underlay substrate has overlapping region with orthographic projection of the power supply voltage signal line on the underlay substrate.

Description

A kind of OLED display panel and display device

technical field

The invention relates to the field of display technology, in particular to an OLED display panel and a display device.

Background technique

Active-matrix organic light emitting diode (AMOLED) displays have broad market applications. In the prior art, bottom emission OLED display devices are mainly used for large-scale displays, such as OLED TVs. However, large-size OLED displays have always had the problem of low aperture ratio.

For example, the structure of a bottom-emitting OLED display panel is shown in Figure 1 (take 2T1C as an example), and the two electrodes of the capacitor Cs are usually arranged in the area between TFT1 and TFT2, using the gate layers of TFT1 and TFT2 and other A layer of metal forms Cs. Therefore, a certain area needs to be occupied, which seriously affects the aperture ratio of the OLED device.

Contents of the invention

The invention provides an OLED display panel and a display device, which are used for increasing the aperture ratio of the OLED display panel.

An embodiment of the present invention provides an OLED display panel, the display panel comprising:

Substrate substrate;

a thin film transistor disposed on the base substrate, and a power supply voltage signal line electrically connected to the thin film transistor;

an OLED light-emitting device disposed on the thin film transistor, and a storage capacitor electrically connected to the power supply voltage signal line;

The orthographic projection of the storage capacitor on the base substrate and the orthographic projection of the power supply voltage signal line on the base substrate have an overlapping area.

In a possible implementation manner, in the above-mentioned display panel provided by the embodiment of the present invention, the OLED light-emitting device includes a first electrode, a light-emitting layer, a pixel definition layer, and a second electrode that are sequentially arranged on the thin film transistor ;

The storage capacitor includes a third electrode and a fourth electrode;

Wherein, the third electrode is arranged on the same layer as the first electrode and is insulated from each other, and the fourth electrode is arranged on the same layer as the second electrode and is insulated from each other.

In a possible implementation manner, in the above display panel provided by the embodiment of the present invention, the thin film transistor includes a switching thin film transistor and a driving thin film transistor arranged in the same layer.

In a possible implementation manner, in the above-mentioned display panel provided by the embodiment of the present invention, the thin film transistor includes an active layer, a gate insulating layer, a gate, an interlayer an insulating layer, a first pole and a second pole;

The display panel further includes: a first insulating layer disposed between the thin film transistor and the OLED light emitting device;

The first electrode in the OLED light-emitting device is electrically connected to the first electrode of the driving thin film transistor through the first via hole penetrating through the first insulating layer.

In a possible implementation manner, in the above display panel provided by the embodiment of the present invention, the power supply voltage signal line is electrically connected to the second electrode of the driving thin film transistor.

In a possible implementation manner, in the above-mentioned display panel provided by the embodiment of the present invention, the fourth electrode is electrically connected to the power supply voltage signal line through a second via hole, and the second via hole passes through the A pixel definition layer and the first insulating layer, and the orthographic projection of the second via hole on the base substrate is located within the orthographic projection of the third via hole on the base substrate, wherein the first Three via holes penetrate through the third electrode, so that the third electrode and the fourth electrode are insulated from each other;

The third electrode is electrically connected to the gate of the driving thin film transistor through a fourth via hole, the fourth via hole penetrates through the first insulating layer and the interlayer insulating layer, and the fourth via hole The orthographic projection of the hole on the base substrate is located within the orthographic projection of the fifth via hole on the base substrate, wherein the fifth via hole passes through the power supply voltage signal line so that the third electrode Insulated from the power supply voltage signal line.

In a possible implementation manner, in the above-mentioned display panel provided by the embodiment of the present invention, the second electrode of the switching thin film transistor is connected to the gate of the driving thin film transistor through the sixth via hole penetrating through the interlayer insulating layer. electrical connection.

In a possible implementation manner, in the above display panel provided by the embodiment of the present invention, the first electrode is an anode, and the second electrode is a cathode.

In a possible implementation manner, in the above-mentioned display panel provided by the embodiment of the present invention, the display panel further includes: data lines and scan lines;

The data line is electrically connected to the first electrode of the switching thin film transistor, and the scanning line is electrically connected to the gate of the switching thin film transistor.

Correspondingly, an embodiment of the present invention further provides a display device, including any one of the above-mentioned OLED display panels provided by the embodiments of the present invention.

The beneficial effects of the present invention are as follows:

In the OLED display panel and display device provided by the embodiments of the present invention, the display panel includes: a base substrate; a thin film transistor disposed on the base substrate, and a power supply voltage signal line electrically connected to the thin film transistor ; an OLED light-emitting device arranged on the thin film transistor, and a storage capacitor electrically connected to the power supply voltage signal line; the orthographic projection of the storage capacitor on the substrate substrate is in line with the power supply voltage signal line The orthographic projections on the substrate substrate have overlapping regions. Therefore, in the OLED display panel provided by the embodiment of the present invention, the storage capacitor is arranged in an area overlapping with the power supply voltage signal line. Since the power supply voltage signal line is arranged in the non-opening area, the storage capacitor is arranged in the non-opening area, thereby further Increased the aperture ratio of the OLED display panel.

Description of drawings

FIG. 1 is a schematic structural diagram of an OLED display panel provided by the prior art;

FIG. 2 is a schematic structural diagram of an OLED display panel provided by an embodiment of the present invention;

3 is a schematic structural diagram of a second OLED display panel provided by an embodiment of the present invention;

4 is a schematic structural diagram of a third OLED display panel provided by an embodiment of the present invention;

FIG. 5 is a circuit diagram for driving an OLED light-emitting device according to an embodiment of the present invention;

FIG. 6 is a schematic structural diagram of a fourth OLED display panel provided by an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of a display device provided by an embodiment of the present invention.

Detailed ways

In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar structures in the drawings, and thus their repeated descriptions will be omitted. The words expressing position and direction described in the present invention are all described by taking the accompanying drawings as an example, but changes can also be made according to needs, and all changes are included in the protection scope of the present invention. The accompanying drawings of the present invention are only used to illustrate the relative positional relationship, and the layer thickness of some parts is drawn in an exaggerated manner for easy understanding, and the layer thickness in the drawings does not represent the proportional relationship of the actual layer thickness.

It should be noted that in the following description, specific details are set forth in order to fully understand the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific embodiments disclosed below. Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". The subsequent description of the specification is a preferred implementation mode for implementing the application, but the description is for the purpose of illustrating the general principle of the application, and is not intended to limit the scope of the application. The scope of protection of the present application should be defined by the appended claims. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or one or more intervening elements may be interposed.

Embodiments of the present invention provide an OLED display panel and a display device, which are used to increase the aperture ratio of the OLED display panel.

Referring to Fig. 2, an OLED display panel provided by an embodiment of the present invention includes: a base substrate (not shown in Fig. 2); a thin film transistor TFT (including TFT1 in Fig. 2 ) arranged on the base substrate and TFT2), and the power supply voltage signal line VDD electrically connected with the thin film transistor TFT; the OLED light-emitting device arranged on the thin film transistor TFT, and the storage capacitor Cs electrically connected with the power supply voltage signal line VDD; the storage capacitor Cs on the substrate The orthographic projection on the substrate and the orthographic projection of the power voltage signal line VDD on the base substrate have overlapping areas.

Specifically, the power supply voltage signal line VDD in the embodiment of the present invention is used to send a displayed voltage signal to the OLED light emitting device. In the present invention, the storage capacitor and the power supply voltage signal line VDD have an overlapping area, including that the orthographic projection of the storage capacitor on the substrate is completely within the orthographic projection of the power supply voltage signal line on the substrate, or the storage capacitor is on the substrate The partial area of the orthographic projection on the substrate is located within the orthographic projection of the power supply voltage signal line on the base substrate. Wherein, FIG. 2 is only illustrated by taking, but not limited to, an orthographic projection of the storage capacitor on the substrate completely within the orthographic projection of the power voltage signal line on the substrate.

Compared with the prior art, in the embodiment of the present invention, the storage capacitor is arranged in the area overlapping with the power supply voltage signal line. Since the power supply voltage signal line is arranged in the non-opening area, the storage capacitor in the present invention is arranged in the non-opening area. area, thereby further increasing the aperture ratio of the OLED display panel.

In a specific embodiment, in order to further illustrate how to set up the storage capacitor so that the storage capacitor and the power supply voltage signal line VDD have an overlapping area and are connected to each other, the structure shown in FIG. 3 is obtained by cutting FIG. 2 along the P1-P2 direction, as shown in FIG. As shown in 3, the OLED light-emitting device includes a first electrode 021, a light-emitting layer 022, a pixel definition layer 023, and a second electrode 024 sequentially arranged on the base substrate 01; the storage capacitor Cs includes a third electrode C1 and a fourth electrode C2 ; Wherein, the third electrode C1 is set on the same layer as the first electrode 021 and is insulated from each other, and the fourth electrode C2 is set on the same layer as the second electrode 024 and is insulated from each other. Therefore, the third electrode C1 and the fourth electrode C2 in the storage capacitor Cs in the embodiment of the present invention can be manufactured simultaneously with the OLED light emitting device, thereby further simplifying the process of manufacturing the display panel.

It should be noted that the size of the third electrode and the fourth electrode and the distance between the third electrode and the fourth electrode in the storage capacitor of the present invention can be set according to the size of the storage capacitor in actual needs, and no specific details are given here. limited.

In a specific embodiment, in the above display panel provided by the embodiment of the present invention, referring to FIG. 2 , the thin film transistor TFT includes a switching thin film transistor TFT1 and a driving thin film transistor TFT2. Wherein, the film layers of the switching thin film transistor TFT1 and the driving thin film transistor TFT2 are respectively arranged in the same layer.

Specifically, the structure shown in FIG. 4 is obtained by cutting along the P3-P4 direction according to FIG. 2. As shown in FIG. 4, the driving thin film transistor TFT2 includes an active layer 031, a gate insulating Layer 037, gate 032, interlayer insulating layer 033, first pole 034 and second pole 035; the display panel further includes: a first insulating layer 036 arranged between the driving thin film transistor TFT2 and the OLED light emitting device; the OLED light emitting device The first electrode 021 is electrically connected to the first electrode 034 of the driving thin film transistor through the first via hole V1 penetrating through the first insulating layer 036 .

It should be noted that the driving thin film transistor TFT2 in the embodiment of the present invention is only of but not limited to a top-gate structure, and may also include a bottom-gate structure. In the embodiment of the present invention, the first pole 034 can be a source, and the second pole 035 can be a drain; or, the first pole 034 can be a drain, and the second pole 035 can be a source. No specific limitation is made here.

In a specific embodiment, in the above display panel provided by the embodiment of the present invention, referring to FIG. 4 , the power supply voltage signal line VDD is electrically connected to the second pole 035 of the driving thin film transistor TFT2. Specifically, the power supply voltage signal line VDD is arranged on the same layer as the first pole or the second pole of the driving thin film transistor.

Specifically, when the OLED light emitting device emits light, it is necessary to provide the voltage signal of the power voltage signal line VDD to the light emitting device by turning on the switching thin film transistor TFT1 and the driving thin film transistor TFT2. As shown in Figure 5, the circuit structure for driving OLED light-emitting devices to emit light includes a switching thin film transistor TFT1, a driving thin film transistor TFT2, and a storage capacitor Cs. Turn on and provide the signal in the data line 04 to the storage capacitor Cs and the gate of the driving thin film transistor TFT2, so that the driving thin film transistor TFT2 provides the voltage signal of the power voltage signal line VDD to the OLED light emitting device. In the present invention, the fourth electrode of the storage capacitor Cs is electrically connected to the power supply voltage signal line VDD, and the third electrode of the storage capacitor Cs is electrically connected to the gate of the driving thin film transistor TFT2.

It should be noted that when cutting along the direction of P1-P2 in FIG. 2 , obviously the position of the driving thin film transistor TFT2 is not cut, because when forming the driving thin film transistor TFT2, a whole layer of gate insulating layer 037, The interlayer insulating layer 033 and the first insulating layer 036. Therefore, when cutting along the direction of P1-P2, the gate insulating layer 037, the interlayer insulating layer 033 and the The first insulating layer 036. In addition, the display panel also includes a power supply voltage signal line VDD and a data line 04 , wherein the power supply voltage signal line VDD and the data line 04 can be arranged on the same layer and insulated from each other, which is not specifically limited here.

The manner in which the fourth electrode C2 of the storage capacitor Cs is electrically connected to the power voltage signal line VDD, and the third electrode C1 is electrically connected to the gate of the driving thin film transistor TFT2 will be described below through specific embodiments.

In a specific embodiment, in the above-mentioned display panel provided by the embodiment of the present invention, the structure shown in FIG. 4 is obtained by cutting FIG. 2 along the P3-P4 direction. As shown in FIG. 4, the fourth electrode C2 passes through the second via hole V2 is electrically connected to the power supply voltage signal line VDD, wherein the second via hole V2 penetrates the pixel definition layer 023 and the first insulating layer 036, and the orthographic projection of the second via hole V2 on the base substrate is located at the third via hole V3 In the orthographic projection on the base substrate, the third via hole V3 runs through the third electrode C1, so that the third electrode C1 and the fourth electrode C2 are insulated from each other; cutting Fig. 2 along the direction of P5-P6 to obtain Fig. 6 As shown in FIG. 6, the third electrode C1 is electrically connected to the gate 032 of the drive transistor TFT2 through the fourth via hole V4, and the fourth via hole V4 penetrates the first insulating layer 036 and the interlayer insulating layer 033. And the orthographic projection of the fourth via hole V4 on the base substrate is located within the orthographic projection of the fifth via hole V5 on the base substrate, wherein the fifth via hole V5 penetrates the power supply voltage signal line VDD, so that the third electrode C1 and The power supply voltage signal lines VDD are insulated from each other.

Specifically, the third electrode C1 in the storage capacitor Cs is electrically connected to the gate 032 of the driving transistor TFT2 through the fourth via hole V4, since the gate 032 of the driving transistor TFT2 is electrically connected to the source or drain of the switching thin film transistor TFT1 Therefore, the third electrode C1 is electrically connected to the source or the drain of the switching thin film transistor TFT1. In the present invention, the orthographic projection of the fourth via hole V4 on the substrate is located within the orthographic projection of the fifth via hole V5 on the substrate, so that the radius of the fourth via hole V4 is smaller than the radius of the fifth via hole V5, that is The fourth via is located within the range of the fifth via. In the embodiment of the present invention, when the third electrode C1 is electrically connected to the gate 032 of the driving thin film transistor TFT2, although it passes through the film layer where the power voltage signal line is located, it is insulated from the power voltage signal line. Specifically, the fourth electrode C2 in the storage capacitor Cs is electrically connected to the power supply voltage signal line VDD through the second via hole V2. In the present invention, the orthographic projection of the second via hole V2 on the substrate is located at the third via hole V3 In the orthographic projection on the base substrate, the radius of the second via hole V2 is smaller than the radius of the third via hole V3, that is, the second via hole V2 is located within the range of the third via hole V3. In the embodiment of the present invention, when the fourth electrode is electrically connected to the power supply voltage signal line, although the fourth electrode passes through the film layer where the third electrode C1 is located, it is insulated from the third electrode C1.

It should be noted that the third electrode C1 in the storage capacitor can also be electrically connected to the gate of the driving thin film transistor in other ways, and the fourth electrode C2 in the storage capacitor can also be electrically connected to the power supply voltage signal line in other ways.

In a specific embodiment, in the above-mentioned display panel provided by the embodiment of the present invention, referring to FIG. 6 , the second electrode 135 of the switching thin film transistor TFT1 is connected to the gate of the driving thin film transistor TFT2 through the sixth via hole V6 penetrating the interlayer insulating layer 033. The pole 032 is electrically connected.

In a specific embodiment, in the above display panel provided by the embodiment of the present invention, the first electrode is an anode, and the second electrode is a cathode. Specifically, the first electrode in the embodiment of the present invention may be an anode, and the second electrode may be a cathode; or, the first electrode may be a cathode, and the second electrode may be an anode. The first electrode in the embodiment of the present invention serves as an anode and may be formed of various conductive materials. For example, the first electrode (as an anode of the organic light emitting device OLED) may be formed as a transparent electrode or a reflective electrode according to its use. When the first electrode is formed as a transparent electrode, the first electrode may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In2O3), etc., when the first electrode is formed as a reflective electrode When, the reflective layer can be formed of Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr or their mixture, and ITO, IZO, ZnO or In2O3 etc. can be formed on the on the reflective layer. A second electrode (as a cathode of the organic light emitting device OLED) is located on the light emitting layer. The second electrode may be formed of Ag or Al. If a voltage is applied between the first electrode and the second electrode, the light emitting layer emits visible light, thereby realizing an image that can be recognized by a user.

In a specific embodiment, in the above-mentioned display panel provided by the embodiment of the present invention, referring to FIG. 2 , the display panel further includes: a data line 04 and a scanning line 05; the data line 04 is electrically connected to the first electrode of the switching thin film transistor TFT1, and the scanning The line 05 is electrically connected to the gate of the switching thin film transistor TFT1.

Based on the same inventive concept, an embodiment of the present invention further provides a display device, including any one of the above-mentioned OLED display panels provided by the embodiments of the present invention. As shown in FIG. 6 , it may include: the above-mentioned display panel provided by the embodiment of the present invention. The display device can be any product or component with a display function such as a mobile phone (as shown in FIG. 6 ), a tablet computer, a television set, a monitor, a notebook computer, a digital photo frame, a navigator, and the like. For the embodiment of the display device, reference may be made to the above embodiment of the display panel, and repeated descriptions will not be repeated.

To sum up, in the OLED display panel and display device provided by the embodiments of the present invention, the display panel includes: a base substrate; a thin film transistor disposed on the base substrate, and a power supply voltage signal line electrically connected to the thin film transistor; An OLED light-emitting device arranged on the thin film transistor, and a storage capacitor electrically connected to the power supply voltage signal line; the orthographic projection of the storage capacitor on the base substrate overlaps with the orthographic projection of the power supply voltage signal line on the base substrate area. Therefore, in the OLED display panel provided by the embodiment of the present invention, by arranging the storage capacitor in an area overlapping with the power supply voltage signal line, since the power supply voltage signal line is generally arranged in a non-opening area, the storage capacitor is not arranged in the opening area, Thus, the aperture ratio of the OLED display panel is further increased.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims (10)

1. A kind of OLED display panel, is characterized in that, described display panel comprises: Substrate substrate; a thin film transistor disposed on the base substrate, and a power supply voltage signal line electrically connected to the thin film transistor; an OLED light-emitting device disposed on the thin film transistor, and a storage capacitor electrically connected to the power supply voltage signal line; The orthographic projection of the storage capacitor on the base substrate and the orthographic projection of the power supply voltage signal line on the base substrate have an overlapping area. 2. The display panel according to claim 1, wherein the OLED light-emitting device comprises a first electrode, a light-emitting layer, a pixel definition layer, and a second electrode sequentially arranged on the thin film transistor; The storage capacitor includes a third electrode and a fourth electrode; Wherein, the third electrode is arranged on the same layer as the first electrode and is insulated from each other, and the fourth electrode is arranged on the same layer as the second electrode and is insulated from each other. 3. The display panel according to claim 2, wherein the thin film transistors comprise switching thin film transistors and driving thin film transistors. 4. The display panel according to claim 3, wherein the thin film transistor comprises an active layer, a gate insulating layer, a gate, an interlayer insulating layer, a second insulating layer, and an active layer disposed on the base substrate in sequence. first and second poles; The display panel further includes: a first insulating layer disposed between the thin film transistor and the OLED light emitting device; The first electrode in the OLED light-emitting device is electrically connected to the first electrode of the driving thin film transistor through the first via hole penetrating through the first insulating layer. 5. The display panel according to claim 4, wherein the power supply voltage signal line is electrically connected to the second electrode of the driving thin film transistor. 6. The display panel according to claim 5, wherein the fourth electrode is electrically connected to the power supply voltage signal line through a second via hole, and the second via hole penetrates through the pixel definition layer and the pixel definition layer. The first insulating layer, and the orthographic projection of the second via hole on the base substrate is located within the orthographic projection of the third via hole on the base substrate, wherein the third via hole penetrates the third electrode, insulating the third electrode and the fourth electrode from each other; The third electrode is electrically connected to the gate of the driving thin film transistor through a fourth via hole, the fourth via hole penetrates through the first insulating layer and the interlayer insulating layer, and the fourth via hole The orthographic projection of the hole on the base substrate is located within the orthographic projection of the fifth via hole on the base substrate, wherein the fifth via hole passes through the power supply voltage signal line so that the third electrode Insulated from the power supply voltage signal line. 7. The display panel according to claim 6, characterized in that, The second electrode of the switching thin film transistor is electrically connected to the gate of the driving thin film transistor through the sixth via hole penetrating through the interlayer insulating layer. 8. The display panel according to claim 2, wherein the first electrode is an anode, and the second electrode is a cathode. 9. The display panel according to claim 4, further comprising: Data lines and scan lines; The data line is electrically connected to the first electrode of the switching thin film transistor, and the scanning line is electrically connected to the gate of the switching thin film transistor. 10. A display device, comprising the OLED display panel according to any one of claims 1-9.