CN107785405A - Array base palte and preparation method thereof - Google Patents
Array base palte and preparation method thereof Download PDFInfo
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- CN107785405A CN107785405A CN201711049540.9A CN201711049540A CN107785405A CN 107785405 A CN107785405 A CN 107785405A CN 201711049540 A CN201711049540 A CN 201711049540A CN 107785405 A CN107785405 A CN 107785405A
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- array base
- base palte
- membrane structure
- thin film
- tft
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000012528 membrane Substances 0.000 claims abstract description 68
- 239000010409 thin film Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000003086 colorant Substances 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 235000016804 zinc Nutrition 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of array base palte and preparation method thereof, belongs to display technology field, it can solve the characteristic of existing thin film transistor (TFT) is influenceed by the light of Organic Light Emitting Diode, causes to show the problem of black picture highlights.The array base palte of the present invention includes substrate, and the substrate is divided into the sub-pixel of multiple different colours, and each sub-pixel includes driving area, capacitive region and luminous zone, and each drive in area is provided with least one thin film transistor (TFT)；Organic Light Emitting Diode is provided with the luminous zone, the first color membrane structure corresponding with sub-pixel colors where luminous zone is provided with below the Organic Light Emitting Diode, the second color membrane structure is provided with below the thin film transistor (TFT), the first color membrane structure of second color membrane structure and at least one color is set with layer.
Description
Technical field
The invention belongs to display technology field, and in particular to a kind of array base palte and preparation method thereof.
Background technology
In the prior art, it is thin preparing in the preparation process of bottom emitting type Organic Light Emitting Diode (OLED) display panel
Before film transistor (TFT), it will usually which the position that active layer is corresponded in substrate is initially formed light shield layer, to prevent illumination pair
(TFT) characteristic impacts.
Inventor has found, although light shield layer can avoid influence of the ambient light (light beyond display panel) to TFT,
But due to TFT than OLED closer to substrate, namely OLED position, light that OLED send more much higher than TFT position
TFT zone can be exposed to after diffusive transport in display panel, influence TFT characteristics, cause display panel when being shown
Existing black picture highlights phenomenon.
The content of the invention
It is contemplated that at least solves one of technical problem present in prior art, there is provided one kind can reduce organic hair
The array base palte of influence of the pipeline that optical diode is sent to tft characteristicses.
Technical scheme is a kind of array base palte used by solving present invention problem, including substrate, the substrate point
For the sub-pixel of multiple different colours, each sub-pixel includes driving area, capacitive region and luminous zone, and each drive in area is provided with extremely
A few thin film transistor (TFT)；Be provided with Organic Light Emitting Diode in the luminous zone, be provided with below the Organic Light Emitting Diode with
First color membrane structure corresponding to sub-pixel colors where luminous zone, the thin film transistor (TFT) lower section are provided with the second color membrane structure, institute
The first color membrane structure for stating the second color membrane structure and at least one color is set with layer.
Preferably, the array base palte is bottom emitting type array base palte；
Below second color membrane structure, metal light shield layer is provided with the position of the active layer of corresponding thin film transistor (TFT).
It is further preferred that the thin film transistor (TFT) is top gate type thin film transistor.
Preferably, second color membrane structure is set with the first red color membrane structure with layer.
Preferably, the array base palte is top emission type array base palte；
Below first color membrane structure, reflector layer is provided with the position of corresponding Organic Light Emitting Diode.
Preferably, the thin film transistor (TFT) in each driving area includes a driving transistor；
Storage capacitance is provided with the capacitive region, the storage capacitance includes the first pole plate and the second pole plate, wherein first
Pole plate sets and is connected with layer with the anode of the Organic Light Emitting Diode of same sub-pixel, while the driving crystal also with same sub-pixel
The drain electrode of pipe is connected.
It is further preferred that the anode of the Organic Light Emitting Diode is made up of tin indium oxide.
It is further preferred that the storage capacitance includes the first pole plate, the second pole plate, tri-electrode successively from bottom to up,
Wherein, second pole plate and the grid of driving transistor are set with layer, the tri-electrode and the driving crystal with sub-pixel
The drain electrode of pipe sets and is connected with layer；
And first is provided with the first insulating barrier between pole plate and the second pole plate, and second is provided between the second pole plate and tri-electrode
Insulating barrier.
It is further preferred that the luminescent layer of the Organic Light Emitting Diode is above the second insulating barrier；
In the luminous zone, the first via, the organic light-emitting diodes are provided with the first insulating barrier and the second insulating barrier
The luminescent layer of pipe is connected by the anode of the first via and Organic Light Emitting Diode.
Another technical scheme is a kind of preparation method of array base palte used by solving present invention problem, the battle array
Row substrate is any one above-mentioned array base palte, and the preparation method includes：
The position that thin film transistor (TFT) and the Organic Light Emitting Diode in a kind of sub-pixel of color are corresponded in substrate uses
Patterning processes form the figure of the second color membrane structure and the first color membrane structure respectively；
Organic Light Emitting Diode and thin film transistor (TFT) are formed in the substrate for completing above-mentioned steps.
In the array base palte of the present invention, the lower section of thin film transistor (TFT) is provided with the second color membrane structure, utilizes the second color membrane structure
The position of thin film transistor (TFT) is raised, in a direction that is perpendicular to the base, shortens thin film transistor (TFT) and Organic Light Emitting Diode
The distance between, the light propagation sent so as to effectively reduce Organic Light Emitting Diode exposes to the active of thin film transistor (TFT)
On layer, avoid impacting the characteristic of thin film transistor (TFT).Meanwhile second color membrane structure and the first color membrane structure set with layer,
The complexity of preparation technology will not be increased.Also, when preparing array base palte, the first color membrane structure and the second coloured silk can be initially formed
Membrane structure, thin film transistor (TFT) is re-formed, so as to avoid the ultraviolet when forming the first color membrane structure and the second color membrane structure
(UV) illumination impacts to the active layer of thin film transistor (TFT), lifts the reliability of thin film transistor (TFT).
Brief description of the drawings
Fig. 1 is the structural representation of the array base palte of embodiments of the invention；
Wherein reference is：1st, substrate；21st, the first color membrane structure；22nd, the second color membrane structure 3, metal light shield layer；4、
Drain electrode；5th, grid；6th, gate insulation layer；7th, active layer；8th, source electrode；9th, anode；10th, luminescent layer；11st, the first pole plate；12nd, the second pole
Plate；13rd, tri-electrode；14th, the first insulating barrier；15th, the second insulating barrier；16th, attachment structure；17th, the 3rd insulating barrier；18th, negative electrode.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
As shown in figure 1, the present embodiment provides a kind of Organic Light Emitting Diode (OLED) array base palte, it includes substrate 1, base
Bottom 1 is divided to be included driving area, capacitive region and luminous zone, each drives in area for the sub-pixel of multiple different colours, each sub-pixel
Provided with least one thin film transistor (TFT) (TFT)；Organic Light Emitting Diode is provided with luminous zone, is provided with below Organic Light Emitting Diode
The first color membrane structure 21 corresponding with sub-pixel colors where luminous zone, it is color specifically, below thin film transistor (TFT) to be provided with second
Membrane structure 22, the first color membrane structure 21 of the second color membrane structure 22 and at least one color are set with layer.
Wherein, top, lower section refer to direction, specifically, as shown in figure 1, all structures of array base palte are all arranged at
The same side of substrate 1, lower section of any of which structure close to the direction of substrate 1 for the structure, the direction away from substrate 1 is the knot
The top of structure.
Wherein, above driving area, capacitive region and luminous zone are the divisions carried out from position to the region of sub-pixel.Its
In, luminous zone refers to form the region of the Organic Light Emitting Diode for display；Driving area and capacitive region are then to be used to form picture
The region of plain circuit (it is used to drive Organic Light Emitting Diode), specifically, capacitive region is used for the storage electricity for forming image element circuit
Hold, driving area is used for the other structures such as each thin film transistor (TFT) formed in image element circuit.
Specifically, in the array base palte that the present embodiment provides, the lower section of thin film transistor (TFT) is provided with the second color membrane structure 22, profit
(further from substrate 1) is raised into the position of thin film transistor (TFT) with the second color membrane structure 22, in longitudinal direction (perpendicular to substrate 1
Direction) on, shorten the distance between thin film transistor (TFT) and Organic Light Emitting Diode and (just set originally below Organic Light Emitting Diode
Have the first color membrane structure 21), the light propagation sent so as to effectively reduce Organic Light Emitting Diode exposes to film crystal
On the active layer 7 of pipe, avoid impacting the characteristic of thin film transistor (TFT).
Meanwhile first color membrane structure 21 be original structure in array base palte, and the second color membrane structure 22 and the first color film
Structure 21 is set with layer, will not increase the complexity of preparation technology.Also, due to the first color membrane structure 21 and the second color film knot
Structure 22 is located at the lower section of Organic Light Emitting Diode and thin film transistor (TFT), when preparing array base palte, can be initially formed the first color film
The color membrane structure 22 of structure 21 and second, re-forms thin film transistor (TFT), so as to avoid forming the first color membrane structure 21 and the
Ultraviolet (UV) illumination impacts to the active layer 7 of thin film transistor (TFT) during two color membrane structures 22, lifts the letter of thin film transistor (TFT)
Lai Xing.
Preferably, organic LED array substrate is that (light deviates from organic light emission to bottom emitting type array base palte from substrate 1
The side of diode is sent)；And the lower section of the second color membrane structure 22, it is provided with gold in the position of the active layer 7 of corresponding thin film transistor (TFT)
Belong to light shield layer 3.Metal light shield layer 3 is lighttight structure, in the prior art would generally be in the substrate 1 of bottom emitting type array base palte
The position of upper corresponding active layer 7 sets metal light shield layer 3, plays a part of blocking ambient, so as to reduce ambient light as far as possible
Line irradiates to be impacted to the characteristic of thin film transistor (TFT).
But the light that metal light shield layer 3 can also send Organic Light Emitting Diode reflexes to active layer 7, and sharp in the present embodiment
Increase the distance between active layer 7 and metal light shield layer 3 with the second color membrane structure 22, so that the light that metal light shield layer 3 reflects
Major part can not be re-reflected on active layer 7.And the light for reflexing to active layer 7 also can filter out it by the second color membrane structure 22
A middle part, therefore metal luminescent layer 10 can be effectively reduced into Organic Light Emitting Diode hair located at the lower section of the second color membrane structure 22
Influence of the light gone out to the characteristic of thin film transistor (TFT).Simultaneously as the increase of the distance between active and metal light shield layer 3, from
And avoid as far as possible during the high temperature such as reliability test because the heat absorption of metal light shield layer 3 heating is to the characteristic of thin film transistor (TFT)
Impact.
It is understood that the metal light shield layer 3 can be connected with the drain electrode 4 of thin film transistor (TFT), it is certain to make it have
Current potential.
Preferably, thin film transistor (TFT) is top gate type thin film transistor, is specifically as follows with indium gallium zinc (IGZO), six
Top gate type thin film transistor of the materials such as thiophene, polythiophene as active layer 7.As shown in figure 1, the grid of top gate type thin film transistor
Pole 5 is in the top of active layer 7.Reflexed to that is, the grid 5 of top gate type thin film transistor can not block metal light shield layer 3
The light of active layer 7, compared with bottom gate thin film transistor, the characteristic of top gate type thin film transistor is more susceptible to organic light emission two
The influence for the light that pole pipe is sent.That is, when the thin film transistor (TFT) on array base palte is top-gated thin film transistor (TFT), this
The effect that the characteristic of the structural defence thin film transistor (TFT) of the array base palte of embodiment is not influenceed by Organic Light Emitting Diode becomes apparent from.
Preferably, the second color membrane structure 22 is set with the first red color membrane structure 21 with layer.That is, the second color membrane structure
22 be red color membrane structure.Although the array base palte of the present embodiment can largely reduce Organic Light Emitting Diode institute
Irradiation of the light sent to the active layer 7 of thin film transistor (TFT), but still can not ensure that active layer 7 will not be shone by light
Penetrate, such as inside array base palte, the light that Organic Light Emitting Diode is sent may reflex to active layer by metal light shield layer 3
7.In the present embodiment, the second color membrane structure 22 is arranged to red color membrane structure, short wavelength light can be filtered out (because real
Trample middle discovery short wavelength light active layer 7 is influenceed it is bigger), so as to further improving shaded effect.
Preferably, the thin film transistor (TFT) each in driving area includes a driving transistor；Storage electricity is provided with capacitive region
Hold, storage capacitance includes the first pole plate 11 and the second pole plate 12, wherein the first pole plate 11 and the organic light-emitting diodes with sub-pixel
The anode 9 of pipe sets and is connected with layer, while is also connected with the drain electrode 4 of the driving transistor of same sub-pixel.
In the prior art, it is necessary to control organic light-emitting diode by image element circuit, and image element circuit includes driving
Dynamic transistor, storage capacitance etc..Active layer 7 of first pole plate 11 of existing storage capacitance generally with thin film transistor (TFT) is set with layer
Put, but the active layer 7 of thin film transistor (TFT) is frequently with materials such as indium gallium zincs (IGZO), to realize the switching function of active layer 7,
The electric conductivity of themselves is necessarily bad, therefore could be used as storage capacitance pole after must entering column conductor to the material of active layer 7
Plate, but IGZO etc. conductor chemical industry skill is complex, and conductor effect is not homogeneous enough, easily causes to show aberration in display
Problem.And the anode 9 of Organic Light Emitting Diode is generally by the preferable material of electric conductivity (such as metal, tin indium oxide etc.) shape
Into.Therefore same patterning processes can be used to form the first pole of storage capacitance and the anode 9 of Organic Light Emitting Diode simultaneously, so as to nothing
Need to enter column conductor chemical industry skill in capacitive region again, reduce preparation technology complexity, and avoid because IGZO conductorization is uneven
Caused by show aberration problem.
It is further preferred that the anode 9 of Organic Light Emitting Diode is made up of tin indium oxide (ITO).ITO has well saturating
Bright property and electric conductivity, it is the preferred material of the anode 9 as Organic Light Emitting Diode.Meanwhile using ITO as storage capacitance
The first pole plate 11, reduce dead resistance, improve the reliability of storage capacitance.
It is further preferred that storage capacitance includes the first pole plate 11, the second pole plate 12, tri-electrode successively from bottom to up
13, wherein, the second pole plate 12 and the grid 5 of driving transistor are set with layer, tri-electrode 13 and the driving crystal with sub-pixel
The drain electrode 4 of pipe sets and is connected with layer；And first is provided with the first insulating barrier 14, the second pole plate between pole plate 11 and the second pole plate 12
The second insulating barrier 15 is provided between 12 and tri-electrode 13.
Specifically, as shown in figure 1, the place layer of anode 9 of Organic Light Emitting Diode is located at each structure institute of driving transistor
In the lower section of layer, the second pole plate of storage capacitance about 12 both sides respectively with the face of 13 and first pole plate of tri-electrode 11 (and
One pole plate 11 and tri-electrode 13 connect), laminated body, capacitor is formed, therefore in the case where occupied area is constant, actual capacitance pole plate
Facing area double, realize bigger capacitance.Moreover, each pole plate of electric capacity is same with the original structure in array base palte
What layer was set, therefore it need not be manufactured separately, technique is simple.
Meanwhile in area is driven, it is exhausted that attachment structure 16, the first insulating barrier 14, active layer 7, grid are sequentially provided with from bottom to top
Edge layer 6, grid 5, the second insulating barrier 15,4 (source electrodes 8) of drain electrode, wherein, the second via is provided with the second insulating barrier 15, driving is brilliant
The drain electrode 4 of body pipe is connected by second via with active layer 7；The position of corresponding second via is provided with the in first insulating barrier 14
Three vias, the drain electrode 4 of driving transistor are connected by the 3rd via with attachment structure 16, attachment structure 16 and organic light-emitting diodes
The anode 9 of pipe and the first pole plate 11 of storage capacitance set with layer and connect that (i.e. attachment structure 16 is the first of storage capacitance
The part that pole plate 11 is extended in driving area, for realizing the first pole plate 11 and the connection of the drain electrode 4 of driving transistor).
Meanwhile as shown in figure 1, the place layer of anode 9 of Organic Light Emitting Diode is located under the active layer 7 of driving transistor
Side, the anode 9 and the segment difference of driving transistor are smaller (being less than 0.1um), can effectively solve the problem that in the prior art due to organic hair
The problem of flattening effect caused by the segment difference of optical diode and driving transistor is larger is bad, improve the luminous of array base palte
Uniformity.Also, the rectangular structure of anode 9 of the Organic Light Emitting Diode in the present embodiment is less, can effectively improve array base
The light extraction efficiency of plate.
It is understood that metal light shield layer 3 can be connected with attachment structure 16, so as to realize itself and driving transistor
The connection of drain electrode 4.
It is further preferred that the luminescent layer 10 of Organic Light Emitting Diode is located at the top of the second insulating barrier 15；In luminous zone,
The first via is provided with first insulating barrier 14 and the second insulating barrier 15, the luminescent layer 10 of Organic Light Emitting Diode passes through the first via
It is connected with the anode 9 of Organic Light Emitting Diode.
Specifically, as shown in figure 1, the top of the second insulating barrier 15 is additionally provided with the 3rd insulating barrier 17, the 3rd insulating barrier 17 covers
The source electrode 8 of driving transistor, drain electrode 4.First via runs through the 3rd insulating barrier 17, the second insulating barrier 15 and the first insulating barrier 14,
The luminescent layer 10 of Organic Light Emitting Diode is connected by first via with anode 9, and the top of luminescent layer 10 is provided with negative electrode 18.Also
It is to say, can be to play a part of pixel defining layer, directly using the first insulating barrier 14 and the second insulating barrier 15 in the present embodiment
Color film layer is formed on the second insulating barrier 15 formed with the first via, without forming picture above the second insulating barrier 15 again
Element defines layer, so as to simplify preparation technology.It is of course also possible to prepared on the second insulating barrier 15 formed with the first via
Pixel defining layer.Preferably, when array base palte is bottom emitting type array base palte, pixel defining layer can be by light-proof material shape
Into.
It is understood that the array base palte in the present embodiment can be bottom emitting type array base palte as previously described, but its
In each structure can be used for top emission type (light is sent from substrate 1 close to the side of Organic Light Emitting Diode) array base palte；When it
For top emission type array base palte when, the lower section of the first color membrane structure 21, reflector layer is provided with the position of corresponding Organic Light Emitting Diode.
That is, some light that Organic Light Emitting Diode is sent exposes to reflector layer through the first color membrane structure 21, then it is anti-by reflector layer
Projected after penetrating from the top of substrate 1.
Wherein, each structure in above array base palte can use conventional material, parameter, preparation method etc., such as：Each electricity
Pole (grid 5, drain electrode 4) and each pole plate, the signal lead material of storage capacitance can be conventional metal materials, such as silver-colored (Ag),
Copper (Cu), aluminium (Al), molybdenum (Mo) etc., or multiple layer metal such as molybdenum niobium alloy/copper/molybdenum niobium alloy (MoNb/Cu/MoNb) etc., or on
State the alloy material of metal, such as aluminium neodymium alloy (AlNd), molybdenum niobium alloy (MoNb) or metal and transparent conductive oxide
The stack architecture such as ITO/Ag/ITO that thing (such as ITO) is formed；First insulating barrier 14, the second insulating barrier 15, gate insulation layer 6 etc. are exhausted
The material of edge layer includes but is not limited to conventional such as silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON) medium
Material, or various new organic insulations, or the material such as aluminum oxide (AlOx) of high-k, hafnium oxide (HfOx),
Tantalum oxide (TaOx) etc..
Embodiment 2：
The present embodiment provides a kind of preparation method of array base palte, for preparing the array base palte of the offer of embodiment 1.The system
Preparation Method includes：
Step 1, the position for corresponding in substrate thin film transistor (TFT) and the Organic Light Emitting Diode in a kind of sub-pixel of color
Put the figure for forming the second color membrane structure and the first color membrane structure respectively using a patterning processes.
Step 2, Organic Light Emitting Diode and thin film transistor (TFT) are formed in the substrate for completing above-mentioned steps.
In the array base palte prepared by preparation method provided using the present embodiment, the lower section of Organic Light Emitting Diode is provided with
First color membrane structure, the lower section of thin film transistor (TFT) are provided with the second color membrane structure, using the second color membrane structure by thin film transistor (TFT)
Position is raised, and shortens the distance between thin film transistor (TFT) and Organic Light Emitting Diode in a longitudinal direction, so as to effective
Reduce the light propagation that Organic Light Emitting Diode is sent to expose on the active layer of thin film transistor (TFT), avoid to thin film transistor (TFT)
Characteristic impacts.
Meanwhile when preparing array base palte, due to being initially formed the first color membrane structure and the second color membrane structure, re-form film
Transistor, so as to avoid when forming the first color membrane structure and the second color membrane structure, ultraviolet (UV) illumination may be to thin
The active layer of film transistor impacts, and lifts the reliability of thin film transistor (TFT).
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of array base palte, including substrate, the substrate is divided into the sub-pixel of multiple different colours, and each sub-pixel includes driving
Dynamic area, capacitive region and luminous zone, each drive in area are provided with least one thin film transistor (TFT)；Organic hair is provided with the luminous zone
Optical diode, the Organic Light Emitting Diode lower section are provided with the first color membrane structure corresponding with sub-pixel colors where luminous zone,
Characterized in that,
The second color membrane structure, the first coloured silk of second color membrane structure and at least one color are provided with below the thin film transistor (TFT)
Membrane structure is set with layer.
2. array base palte according to claim 1, it is characterised in that
The array base palte is bottom emitting type array base palte；
Below second color membrane structure, metal light shield layer is provided with the position of the active layer of corresponding thin film transistor (TFT).
3. array base palte according to claim 2, it is characterised in that
The thin film transistor (TFT) is top gate type thin film transistor.
4. array base palte according to claim 1, it is characterised in that
Second color membrane structure is set with the first red color membrane structure with layer.
5. array base palte according to claim 1, it is characterised in that
The array base palte is top emission type array base palte；
Below first color membrane structure, reflector layer is provided with the position of corresponding Organic Light Emitting Diode.
6. array base palte according to claim 1, it is characterised in that
Thin film transistor (TFT) in each driving area includes a driving transistor；
Storage capacitance is provided with the capacitive region, the storage capacitance includes the first pole plate and the second pole plate, wherein the first pole plate
Set and be connected with layer with the anode of the Organic Light Emitting Diode of same sub-pixel, at the same also with the driving transistor of same sub-pixel
Drain electrode is connected.
7. array base palte according to claim 6, it is characterised in that
The anode of the Organic Light Emitting Diode is made up of tin indium oxide.
8. array base palte according to claim 6, it is characterised in that
The storage capacitance includes the first pole plate, the second pole plate, tri-electrode successively from bottom to up, wherein, second pole plate
Set with the grid of driving transistor with layer, the drain electrode of the tri-electrode and the driving transistor with sub-pixel set with layer and
It is connected；
And first is provided with the first insulating barrier between pole plate and the second pole plate, and the second insulation is provided between the second pole plate and tri-electrode
Layer.
9. array base palte according to claim 8, it is characterised in that
The luminescent layer of the Organic Light Emitting Diode is above the second insulating barrier；
In the luminous zone, the first via is provided with the first insulating barrier and the second insulating barrier, the Organic Light Emitting Diode
Luminescent layer is connected by the anode of the first via and Organic Light Emitting Diode.
10. a kind of preparation method of array base palte, it is characterised in that the array base palte is any described in claim 1 to 9
A kind of array base palte, the preparation method include：
The position of thin film transistor (TFT) and the Organic Light Emitting Diode in a kind of sub-pixel of color is corresponded in substrate using once
Patterning processes form the figure of the second color membrane structure and the first color membrane structure respectively；
Organic Light Emitting Diode and thin film transistor (TFT) are formed in the substrate for completing above-mentioned steps.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300917A (en) * | 2018-09-30 | 2019-02-01 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, and display panel |
| CN109887976A (en) * | 2019-03-07 | 2019-06-14 | 合肥鑫晟光电科技有限公司 | Array substrate and preparation method thereof, display panel and display device |
| CN110071148A (en) * | 2019-04-10 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | Organic LED display device and its manufacturing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1567077A (en) * | 2003-06-16 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor liquid crystal display and manufacturing method thereof |
| CN1964065A (en) * | 2006-12-06 | 2007-05-16 | 友达光电股份有限公司 | Pixel structure of active organic light emitting diode and manufacturing method thereof |
| CN103000662A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
| US20150091786A1 (en) * | 2013-10-02 | 2015-04-02 | Lg Display Co., Ltd. | Organic Light Emitting Display Device |
| CN107221552A (en) * | 2017-05-25 | 2017-09-29 | 深圳市华星光电技术有限公司 | The preparation method and TOC type OLED displays of TOC type OLED displays |
-
2017
- 2017-10-31 CN CN201711049540.9A patent/CN107785405B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1567077A (en) * | 2003-06-16 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor liquid crystal display and manufacturing method thereof |
| CN1964065A (en) * | 2006-12-06 | 2007-05-16 | 友达光电股份有限公司 | Pixel structure of active organic light emitting diode and manufacturing method thereof |
| CN103000662A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
| US20150091786A1 (en) * | 2013-10-02 | 2015-04-02 | Lg Display Co., Ltd. | Organic Light Emitting Display Device |
| CN107221552A (en) * | 2017-05-25 | 2017-09-29 | 深圳市华星光电技术有限公司 | The preparation method and TOC type OLED displays of TOC type OLED displays |
Cited By (21)
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|---|---|---|---|---|
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| US20200105789A1 (en) * | 2018-09-30 | 2020-04-02 | Boe Technology Group Co., Ltd. | Array substrate, method of manufacturing the same, and display panel |
| CN109887976A (en) * | 2019-03-07 | 2019-06-14 | 合肥鑫晟光电科技有限公司 | Array substrate and preparation method thereof, display panel and display device |
| WO2020206778A1 (en) * | 2019-04-10 | 2020-10-15 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode display device and manufacturing method therefor |
| CN110071148A (en) * | 2019-04-10 | 2019-07-30 | 深圳市华星光电半导体显示技术有限公司 | Organic LED display device and its manufacturing method |
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| CN110391283A (en) * | 2019-07-31 | 2019-10-29 | 上海天马微电子有限公司 | Organic light emitting display panel and organic light emitting display device |
| WO2021098610A1 (en) * | 2019-11-19 | 2021-05-27 | 京东方科技集团股份有限公司 | Display substrate, method for manufacturing same, and display apparatus |
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| US11882729B2 (en) | 2019-11-19 | 2024-01-23 | Hefei Boe Joint Technology Co., Ltd. | Display substrate and method for manufacturing the same, and display apparatus |
| CN113270422A (en) * | 2020-02-17 | 2021-08-17 | 合肥鑫晟光电科技有限公司 | Display substrate, preparation method thereof and display panel |
| WO2021164569A1 (en) * | 2020-02-17 | 2021-08-26 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display panel |
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| US12144204B2 (en) | 2020-02-17 | 2024-11-12 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Display substrate including a common buffer layer |
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