CN107785240A - Substrate heating equipment, substrate heating method and infrared heater - Google Patents
Substrate heating equipment, substrate heating method and infrared heater Download PDFInfo
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- CN107785240A CN107785240A CN201710573155.8A CN201710573155A CN107785240A CN 107785240 A CN107785240 A CN 107785240A CN 201710573155 A CN201710573155 A CN 201710573155A CN 107785240 A CN107785240 A CN 107785240A
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- infrared heater
- heating
- infrared
- heater
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- 239000000758 substrate Substances 0.000 title claims abstract description 380
- 238000010438 heat treatment Methods 0.000 title claims abstract description 328
- 238000000034 method Methods 0.000 title claims description 54
- 238000005452 bending Methods 0.000 claims abstract description 116
- 239000012298 atmosphere Substances 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims description 38
- 239000002904 solvent Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 48
- 239000000203 mixture Substances 0.000 description 33
- 229920001721 polyimide Polymers 0.000 description 32
- 239000007788 liquid Substances 0.000 description 28
- 239000004642 Polyimide Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 24
- 230000009471 action Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 9
- 230000008602 contraction Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000006837 decompression Effects 0.000 description 7
- 230000033001 locomotion Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000012530 fluid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007790 scraping Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001442589 Convoluta Species 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001146 hypoxic effect Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Drying Of Solid Materials (AREA)
- Furnace Details (AREA)
Abstract
The substrate heating equipment of present embodiment, including：Relief portion, the atmosphere of the receiving space of the substrate to being coated with solution depressurize；Infrared heater, substrate described in infrared heating can be passed through；The infrared heater is in the tubulose in the bending of multiple positions, and including：Bending section, bent in a manner of protruding laterally；Cap, it is configured at least a portion from bending section described in outer side covers.
Description
Technical field
The present invention relates to substrate heating equipment, substrate heating method and infrared heater.
Background technology
In recent years, the following market demand be present：Used instead of glass substrate with flexible resin substrate as electricity
The substrate of sub- device.Such resin substrate is for example using polyimide film.For example, polyimide film is coated with substrate
Formed after the solution of the precursor of polyimides, by the process (heating process) heated to the substrate.As poly-
The solution of imido precursor, such as the polyamide acid varnish being made up of polyamic acid and solvent be present (referring for example to patent text
Offer 1 and patent document 2).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2001-210632 publications
Patent document 2：International Publication No. 2009/104371
Patent document 3：Japanese Unexamined Patent Publication 2006-170524 publications
The content of the invention
Invention technical problems to be solved
However, above-mentioned heating process includes：Make the first process and make polyamic acid that solvent evaporates at a lower temperature
The second process solidified at relatively high temperatures.Consider in the second process, using infrared heater, can be added by infrared ray
Hot substrate.As infrared heater, such as known have in W types or U-shaped infrared heater (referring for example to patent document
3).But W types or U-shaped infrared heater, expose the part bent in a manner of protruding laterally, the part exposed with
Other parts, which are compared, to cool, therefore problem be present in terms of the balance of Temperature Distribution of infrared heater is improved.
In view of situation as the above, it is an object of the invention to provide a kind of substrate heating equipment, substrate heating method
And infrared heater, it is possible to increase the balance of the Temperature Distribution of infrared heater.
For solving the scheme of above-mentioned technical problem
The substrate heating equipment of the scheme of the present invention, it is characterised in that including：Relief portion, the base to being coated with solution
The atmosphere of the receiving space of plate is depressurized；Infrared heater, substrate described in infrared heating, the infrared ray can be passed through
Heater is in the tubulose in the bending of multiple positions, and including：Bending section, bent in a manner of protruding laterally；Cap, configuration
For from least a portion of bending section described in outer side covers.
According to this composition, because infrared heater includes being configured at least one of lid from outer side covers bending section
Portion, so exposing for bending section can be avoided, cool so as to suppress bending section compared with other parts.That is, because
At least a portion of bending section can be heated from outside by cap, so can suppress bending section produces temperature with other parts
Difference.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater.
Can also be that in above-mentioned substrate heating equipment, the infrared heater also includes multiple straight portions, described straight
Portion has long side in a first direction, and is configured side by side in the second direction intersected with the first direction, the bending
Portion links the end in the straight portion of adjacent 2, and the cap is in a manner of from the multiple bending sections of outer side covers described
Linearly extend in second direction.
According to this composition, cap linearly extends in a second direction in a manner of from the multiple bending sections of outer side covers,
Thus, it is possible to avoid multiple bending sections to expose together, therefore multiple bending sections can be suppressed together and sent out compared with other parts
Raw cooling.That is, because multiple bending sections can be heated together from outside by cap, can suppress multiple bending sections with
Other parts produce temperature difference.Therefore, it is possible to effectively improve the balance of the Temperature Distribution of infrared heater.It is in addition, infrared
Line heater also includes multiple straight portions, and thus multiple straight portions are adjacent to each other, it is possible to increase mutual heating temp, therefore can be
The balance of the Temperature Distribution of infrared heater is improved under higher temperature, the multiple straight portion has long side in a first direction,
And configure side by side in the second direction intersected with first direction.
Can also be that in above-mentioned substrate heating equipment, the interval between the cap and bending section is than adjacent 2
Interval between the straight portion is small.
According to this composition, with make between cap and bending section at intervals of the interval between adjacent 2 straight portions more than
Situation compares, and can more reliably avoid exposing for bending section, therefore can more reliably suppress bending section and other parts
Compared to cooling.That is, can because can more reliably heat at least a portion of bending section from outside by cap
More reliably suppress bending section and produce temperature difference with other parts.Therefore, it is possible to more reliably improve the temperature of infrared heater
Spend the balance of distribution.
Can also be that in above-mentioned substrate heating equipment, the infrared heater also includes：First introduction part, if
Put in one end of the infrared heater；Second introduction part, is arranged on the other end of the infrared heater, and described first
At least one party of introduction part and second introduction part is arranged on the end of the cap.
However, if the first introduction part is got too close to the second introduction part, in the presence of the part temperature than other parts
The tendency that temperature more cools.But according to this composition, because the first introduction part is remote to a certain extent with the second introduction part,
Partly cool so infrared heater can be suppressed.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater.
Can also be, in above-mentioned substrate heating equipment, under vertical view state, the outside shape of the infrared heater
The central portion of shape rectangular shaped, first introduction part and second introduction part on one side of the infrared heater
It is opposed to configure.
According to this composition, because the first introduction part is remote to a certain extent with the second introduction part, can suppress infrared
Line heater partly cools.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater.
Can also be, in above-mentioned substrate heating equipment, under vertical view state, the outside shape of the infrared heater
Shape rectangular shaped, the first introduction part configuration is in the side on one side of the infrared heater, second introduction part
Configure the opposite side on described one side.
According to this composition because in infrared heater from any one in the first introduction part or the second introduction part to
The part of bending section is the U-shaped tubulose in 2 position bendings (i.e. along three in addition to described one side of infrared heater
The shape on side), so compared with straight tube-like and the situation of L word tubuloses, it is possible to increase the flexibility of infrared heater.Cause
This, even if one side thermal expansion or thermal contraction of infrared heater, can also utilize the flexibility of infrared heater
To allow the expansion on described one side or contraction.
Can also be, in above-mentioned substrate heating equipment, under vertical view state, the outside shape of the infrared heater
Shape rectangular shaped, the first introduction part configuration is in a corner of the infrared heater, the second introduction part configuration
Diagonal section in a corner.
According to this composition, under vertical view state, the allocation position of the first introduction part and the second introduction part is with infrared ray
Point symmetry on the basis of the center of heater, and the first introduction part and the second introduction part compared with far from.Thus, even if
In the case of first introduction part and the cooling further than other parts of the second introduction part, mutual cooling temperature will not be also reduced
Degree, so as to avoid infrared heater partly excessive drop temperature, therefore can improve infrared heater as much as possible
The balance of Temperature Distribution.
Can also be that in above-mentioned substrate heating equipment, under vertical view state, the infrared heater is point-symmetrically
Shape.
According to this composition, compared with situation of the infrared heater in asymmetrical shape under vertical view state, Neng Gougeng
Reliably improve the balance of the Temperature Distribution of infrared heater.
Can also be, in above-mentioned substrate heating equipment, under vertical view state, the outside shape of the infrared heater
Shape rectangular shaped, first introduction part and second introduction part are adjacently configured at the one of the infrared heater
Corner.
, can because the distance between the first introduction part and the second introduction part become minimum according to this composition
Suppress the thermal expansion or thermal contraction of infrared heater by ground.
Can also be, in above-mentioned substrate heating equipment, under vertical view state, first introduction part and described
At least a portion of two introduction parts enters in the outer shape of the infrared heater.
According to this composition because can be avoided when configuring infrared heater the first introduction part and the second introduction part into
To hinder, so the free degree of layout can be improved.For example, when laying multiple infrared heaters on a surface, can keep away
Exempt from 2 adjacent infrared heaters to interfere at the first introduction part and the second introduction part, therefore being capable of neat shakedown
If multiple infrared heaters.
Can also be that in above-mentioned substrate heating equipment, in addition to unit heater, the unit heater are configured to
Multiple infrared heaters are laid on a surface.
According to this composition, because possessing above-mentioned infrared heater, the Temperature Distribution of unit heater can be improved
Balance.In addition, in the case where can individually control multiple infrared heaters, the infrared heating of a part can be made
The output of device is bigger than the output of other infrared heaters, so the good heating of Temperature Distribution can be carried out to substrate.Example
Such as, in the case where the temperature of the corner of substrate is relatively low, configuration is made in the infrared heater of position corresponding with the part
Output is bigger than the output of other infrared heaters, thus only improves the temperature of the part, it is possible to increase the overall temperature of substrate
Degree distribution.
Can also be that in above-mentioned substrate heating equipment, the unit heater includes：Multiple first infrared heatings
Device, in one direction laying configuration；Multiple second infrared heaters, with one to parallel direction upper berth establishing
Put, second infrared heater by with the boundary portion of 2 adjacent first infrared heaters abut in a manner of,
Configured with one to being laid with first infrared heater on the direction intersected.
According to this composition, because the Temperature Distribution of the first infrared heater and the Temperature Distribution of the second infrared heater
Can reciprocally it supplement, so the balance of the Temperature Distribution of unit heater can be improved further.
Can also be that in above-mentioned substrate heating equipment, under vertical view state, second infrared heater has
With the first infrared heater identical shape.
According to this composition, under vertical view state the second infrared heater have it is different with the first infrared heater
The situation of shape is compared, and can more reliably improve the balance of the Temperature Distribution of unit heater.Even if in addition, change substrate chi
It is very little, also infrared heater can be equally spaced configured, and substrate can be carried out by changing the number of infrared heater
The good heating of Temperature Distribution.However, in the case where infrared heater is simple straight tube, if substrate size becomes big,
The length elongation for making straight tube is needed, therefore there is a possibility that to be difficult to the thermal expansion for allowing infrared heater.But according to this
Form, even if substrate size becomes big, the size of infrared heater will not also change, therefore easily infrared ray can be allowed to add
The thermal expansion of hot device.
Can also be that in above-mentioned substrate heating equipment, under vertical view state, second infrared heater has
Make first infrared heater be rotated by 90 ° after shape.
According to this composition, because can reciprocally be supplemented with the second infrared heater using the first infrared heater
The Temperature Distribution as caused by the shape of infrared heater, so the Temperature Distribution of unit heater can be improved further
Balance.
Can also be that in above-mentioned substrate heating equipment, in addition to heating part, the heating part are matched somebody with somebody across the substrate
Put in the side opposite with the infrared heater, and the substrate can be heated.
, can be more effectively because the heating of heating part and the heating of infrared heater are complemented each other according to this composition
Heat substrate.
Can also be, in above-mentioned substrate heating equipment, in addition to can accommodate the substrate, the heating part and
The chamber of the infrared heater.
According to this composition, because the heating-up temperature of substrate can be managed in intracavitary, substrate can be effectively heated.
Can also be, in above-mentioned substrate heating equipment, the substrate, the heating part and the infrared heating
The shared chamber of device accommodates.
According to this composition, heating of the heating part to substrate can be carried out together in shared intracavitary and added with infrared ray
Heating of the hot device to substrate.That is, the feelings without being housed inside mutually different chamber as heating part and infrared heater
Condition is like that, it is necessary to time for making substrate be conveyed between 2 different chambers.Therefore, it is possible to more efficiently carry out substrate
Heating.In addition, compared with the situation of 2 chamber different with possessing, device integral miniaturization can be made.
Can also be that in above-mentioned substrate heating equipment, the solution is only coated on the first surface of the substrate,
The heating part is configured in the side opposite with the first surface of the substrate i.e. side of second surface.
According to this composition, because from heat caused by heating part from the side of the second surface of substrate towards first surface
Side is transmitted, so substrate can be heated effectively.In addition, during using heating part heating substrate, can efficiently enter
Row is applied to volatilization or the imidizate (such as exhaust in film forming) of the solution of substrate.
Can also be, in above-mentioned substrate heating equipment, in the heating part and the infrared heater extremely
A few side can periodically heat the substrate.
According to this composition, compared with being only capable of with the situation of stationary temperature heating substrate with heating part and infrared heater
Compared with the membrance casting condition for the solution that can efficiently heat substrate to be adapted to be coated on substrate.Therefore, the solution for being coated on substrate is made
Periodically dry, can solidify well.
Can also be that in above-mentioned substrate heating equipment, in addition to position adjustment portion, the position adjustment portion can adjust
At least one party and the relative position of the substrate in the whole heating part and the infrared heater.
According to this composition, compared with not possessing the situation in the position adjustment portion, the heating-up temperature of substrate is easily adjusted.
For example, heating part and infrared heater can be made close to substrate, energy in the case where the heating-up temperature of substrate to be made uprises
Enough in the case of the heating-up temperature step-down of substrate to be made, make heating part and infrared heater away from substrate.Therefore, easily
Periodically heat substrate.
Can also be that in above-mentioned substrate heating equipment, the position adjustment portion includes that the substrate can be made in institute
State the move portion moved between heating part and the infrared heater.
According to this composition, moved by making substrate between heating part and infrared heater, by heating part and red
At least one party of outside line heater is configured in the state of fixed position, can adjust the heating-up temperature of substrate.It is it is therefore not necessary to another
Outer setting can make the device that at least one party of heating part and infrared heater moves, therefore can be formed tune with simple
The heating-up temperature of integral basis plate.
Can also in above-mentioned substrate heating equipment, be set between the heating part and the infrared heater
The delivery section of the substrate can be conveyed by being equipped with, in the delivery section formed with can make what the move portion passed through to pass through portion.
According to this composition, because in the case of making substrate mobile between heating part and infrared heater, base can be made
Plate is by by portion, so substrate need not be made to be moved around delivery section.It is therefore not necessary to it is provided for making substrate in addition around defeated
The device of portion and movement is sent, can be with the simple movement for being formed swimmingly progress substrate.
Can also be that in above-mentioned substrate heating equipment, the move portion includes multiple pins, and the multiple pin can prop up
The second surface of side opposite with the first surface of the substrate is held, and can be moved up in the normal direction of the second surface
Dynamic, the front end of the multiple pin is configured in the face parallel with the second surface.
According to this composition, because substrate can be heated in the state of stably supporting substrates, can make to be coated on
The solution-stabilized ground film forming of substrate.
Can also in above-mentioned substrate heating equipment, in the heating part formed with multiple inserting holes, make described add
In the normal direction upper shed of the second surface, the front end of the multiple pin can be supported via the multiple inserting hole in hot portion
It is connected to the second surface.
According to this composition, because the handing-over of substrate, energy can be carried out between multiple pins and heating part in short time
Enough heating-up temperatures for efficiently adjusting substrate.
Can also be that in above-mentioned substrate heating equipment, the heating part is electric hot plate.
According to this composition, because homogenize in the face of substrate the heating-up temperature of substrate, film can be improved
Characteristic.For example, substrate is heated in the state of being abutted on the surface for making electric hot plate with the second surface of substrate, thus, it is possible to improve
The inner evenness of the heating-up temperature of substrate.
Can also in above-mentioned substrate heating equipment, in addition to the temperature detection of the substrate temperature can be detected
Portion.
According to this composition, substrate temperature can be grasped in real time.For example, based on the testing result of temperature detecting part to substrate
Heated, deviate desired value so as to suppress substrate temperature.
Can also in above-mentioned substrate heating equipment, in addition to recoverer, can reclaim from being coated on the substrate
The solution evaporation solvent.
According to this composition, can prevent from the solvent of solution evaporation to factory's side discharge.In addition, it is connected to by recoverer
In the case of the pipeline of relief portion (vavuum pump), can prevent from liquefying again from the solvent of solution evaporation and adverse current to vavuum pump
It is interior.And then cleaning fluid can be used as to recycle from the solvent of solution evaporation.For example, cleaning fluid can be used in the clear of spray nozzle front end
Cleaning of liquid wash, being attached to scraping part etc., the scraping part scrape to the liquid being attached on nozzle.
The substrate heating method of the scheme of the present invention, it is characterised in that include following process：Process is depressurized, to coating
The atmosphere of the receiving space of the substrate of solution is depressurized；Heating process, by substrate described in infrared heating, add described
In thermal technology's sequence, using infrared heater by substrate described in infrared heating, the infrared heater is at multiple positions
The tubulose of bending, including：Bending section, bent in a manner of protruding laterally；Cap, it is configured to from bending section described in outer side covers
At least a portion.
According to this method, in heating process, because infrared heater includes being configured to from outer side covers bending section
At least one of cap, so exposing for bending section can be avoided, sent out so as to suppress bending section compared with other parts
Raw cooling.That is, because at least a portion of bending section can be heated from outside by cap, bending section and its can be suppressed
He partly produces temperature difference.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater.
The present invention a scheme infrared heater, be can by the infrared heater of infrared heating substrate,
Characterized in that, the infrared heater is in the tubulose in the bending of multiple positions, and including：Bending section, with convex laterally
The mode gone out is bent；Cap, it is configured at least a portion from bending section described in outer side covers.
According to this composition, because infrared heater includes being configured at least one of lid from outer side covers bending section
Portion, so exposing for bending section can be avoided, cool so as to suppress bending section compared with other parts.That is, because
At least a portion of bending section can be heated from outside by cap, so can suppress bending section produces temperature with other parts
Difference.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater.
Invention effect
In accordance with the invention it is possible to provide a kind of substrate heating equipment and infrared heater, it is possible to increase infrared ray adds
The balance of the Temperature Distribution of hot device.
Brief description of the drawings
Fig. 1 is the stereogram of the substrate heating equipment of first embodiment.
Fig. 2 is the top view for the infrared heater for showing first embodiment.
Fig. 3 is the figure for illustrating conveying roller, substrate and the configuration relation of heating part.
Fig. 4 is for illustrating the figure of the one of the action of the substrate heating equipment of first embodiment.
Fig. 5 be subsequent figure 4, first embodiment substrate heating equipment action specification figure.
Fig. 6 be subsequent figure 5, first embodiment substrate heating equipment action specification figure.
Fig. 7 is the top view of the first variation of the infrared heater for showing first embodiment.
Fig. 8 is the top view of the second variation of the infrared heater for showing first embodiment.
Fig. 9 is the top view of the infrared heater of second embodiment.
Figure 10 is for illustrating the figure of the one of the action of the substrate heating equipment of second embodiment.
Figure 11 be subsequent figure 10, second embodiment substrate heating equipment action specification figure.
Figure 12 be subsequent figure 11, second embodiment substrate heating equipment action specification figure.
Figure 13 is the top view of the infrared heater of the 3rd embodiment.
Figure 14 is the top view of the unit heater of the 4th embodiment.
Figure 15 is the top view of the unit heater of the 5th embodiment.
Embodiment
Hereinafter, embodiments of the present invention are illustrated referring to the drawings.In the following description, XYZ right angles are set to sit
Mark system, while with reference to the XYZ rectangular coordinate systems, while being illustrated to the position relationship of each part.By the regulation in horizontal plane
Direction is as X-direction, using direction orthogonal with X-direction in the horizontal plane as Y-direction, will respectively with X-direction and Y-direction just
The direction (i.e. vertical direction) of friendship is used as Z-direction.
(first embodiment)
<Substrate heating equipment>
Fig. 1 is the stereogram of the substrate heating equipment 1 of first embodiment.
As shown in figure 1, substrate heating equipment 1 possesses：Chamber 2, relief portion 3, gas supply part 4, heating part 5, infrared ray add
Hot device 6, position adjustment portion 7, delivery section 8, temperature detecting part 9, recoverer 11, swing part 12 and control unit 15.Control unit 15
The generally inscape of control base board heater 1.For convenience, in Fig. 1, chamber 2, relief portion 3 are shown with double dot dash line
And gas supply part 4.
<Chamber>
Chamber 2 can accommodate substrate 10, heating part 5 and infrared heater 6.Substrate 10, heating part 5 and infrared ray add
Hot device 6 is housed inside shared chamber 2.Chamber 2 is formed as the box-like of cuboid.Specifically, chamber 2 with lower component by being formed：Rectangle
The top plate 21 of shape；The bottom plate 22 of rectangular plate-like, it is opposed with top plate 21；Rectangular box-like perisporium 23, with top plate 21 and bottom plate
22 neighboring is connected.For example, the -X direction side of perisporium 23 is provided with substrate carrying-in/carrying-out mouth 23a, for relative to chamber 2
Move into and take out of substrate 10.
Chamber 2 is configured to accommodate substrate 10 with confined space.For example, using welding etc. seamlessly engage top plate 21,
Each connecting portion of bottom plate 22 and perisporium 23, thus, it is possible to improve the air-tightness in chamber 2.
<Relief portion>
Relief portion 3 is connected to the corner near the substrate carrying-in/carrying-out mouth 23a of the -Y direction side of bottom plate 22.Relief portion 3
Can be to being depressurized in chamber 2.For example, relief portion 3 possesses the mechanism of decompressor of pump machanism etc..The mechanism of decompressor possesses vavuum pump 13.
In addition, the connecting portion of relief portion 3 is not limited to the angle near the substrate carrying-in/carrying-out mouth 23a of the -Y direction side of bottom plate 22
Portion.Relief portion 3 can also be connected to chamber 2.
Relief portion 3 can be depressurized to the atmosphere of the receiving space of substrate 10, and the substrate 10 is coated with for being formed
The solution (hereinafter referred to as " polyimides formation liquid ") of polyimide film (polyimides).Polyimides formation is for example wrapped with liquid
Containing polyamic acid or polyimide powder.Polyimides formation is only coated on the first table of the substrate 10 of rectangular tabular with liquid
Face 10a (upper surface).In addition, solution is not limited to polyimides formation liquid.As long as solution is used for shape on the substrate 10
Into defined film.
<Gas supply part>
Gas supply part 4 is connected to the corner near the top plate 21 of the +X direction side of perisporium 23.Gas supply part 4 can
Adjust the state of the internal atmosphere of chamber 2.Gas supply part 4 supplies nitrogen (N into chamber 22), helium (He), argon gas (Ar) etc.
Inert gas.In addition, the connecting portion of gas supply part 4 is not limited to the angle near the top plate 21 of the +X direction side of perisporium 23
Portion.As long as gas supply part 4 is connected to chamber 2.In addition it is also possible to by the supply gas when substrate cools, for base
Plate cools down.
The oxygen concentration of the internal atmosphere of chamber 2 can be adjusted by gas supply part 4.The oxygen concentration of the internal atmosphere of chamber 2
It is more low better that (quality criteria) is preferably.Specifically, preferably by the oxygen concentration of the internal atmosphere of chamber 2 be set to 100ppm with
Under, more preferably it is set to below 20ppm.
For example, as described later, in the atmosphere when the polyimides formation to being coated on substrate 10 is solidified with liquid, lead to
Cross makes oxygen concentration below the preferable upper limit, can easily to carry out the solidification of polyimides formation liquid like this.
<Heating part>
Heating part 5 is configured in the lower section in chamber 2.Heating part 5 can heat substrate 10 with the first temperature.The energy of heating part 5
It is enough periodically to heat substrate 10.Temperature range comprising the first temperature is, for example, the scope of more than 20 DEG C and less than 300 DEG C.
Heating part 5 is configured in side opposite with the first surface 10a of substrate 10 i.e. second surface 10b (lower surface) side.
5 rectangular tabular of heating part.Heating part 5 being capable of supporting substrates 10 from below.The upper surface of heating part 5 is in along base
The first surface 10a of plate 10 tabular surface.Heating part 5 is, for example, electric hot plate.
<Infrared heater>
Infrared heater 6 is configured in the top in chamber 2.Infrared heater 6 can be with higher than the first temperature
Two temperature heat substrate 10.Infrared heater 6 is separately set with heating part 5.Infrared heater 6 being capable of the stage
Heat substrate 10 to property.Temperature range comprising second temperature is, for example, the scope of more than 200 DEG C and less than 600 DEG C.It is infrared
Line heater 6 is configured in the first surface 10a of substrate 10 side.
Infrared heater 6 is supported by top plate 21.Consolidating near the top plate 21 that infrared heater 6 is fixed in chamber 2
Positioning is put.The peak wavelength scope of infrared heater 6 is, for example, the scope of more than 1.5 μm and less than 4 μm.It is in addition, infrared
The peak wavelength scope of line heater 6 is not limited to above range, can as requested specification and be set as various scopes.
Fig. 2 is the top view of the infrared heater 6 of first embodiment.
As shown in Fig. 2 infrared heater 6 is in the tubulose in the bending of multiple positions.Under vertical view state, infrared heating
The outer shape rectangular shaped of device 6.The length on one side of the outer shape of infrared heater 6 is, for example, 225mm or so.It is red
The total length (pipeline total length) of outside line heater 6 is, for example, 2475mm or so.Infrared heater 6 is for example formed by quartz ampoule.
Infrared heater 6 possesses：Straight portion group 30, bending section group 31, the 32,33, first introduction part of cap 34 and second
Introduction part 35.
Straight portion group 30 possesses multiple (for example, being 9 in present embodiment) straight portion 30a~30i.Straight portion 30a~30i be in
There is the straight tube-like of long side (length) on first direction V1.Straight portion 30a~30i in (intersection) orthogonal with first direction V1 second
It is arranged in parallel with the V2 of direction multiple.Multiple straight portion 30a~30i separated on second direction V2 substantially identical interval S1 (in
Spacing between mandrel) configure.Interval S1 between the straight portion 30a~30i of adjacent 2 is, for example, 25mm or so.In addition, from
Two direction V2 side is carried out towards opposite side, with straight portion 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i order
Configuration.
Bending section group 31 possesses multiple (for example, being 8 in present embodiment) bending section 31a~31h.Bending section 31a~
31h is bent in a manner of in protruding laterally.Bending section 31a~31h links the end of 2 adjacent straight portion 30a~30i.Example
Such as, bending section 31a links straight portion 30a one end and straight portion 30b one end.That is, bending section 31a~31h is red to link
The bending section that the mode of the end of the straight portion 30a~30i in adjacent 2 in outside line heater 6 is bent.It is curved under vertical view state
Pars convoluta 31a~31h is in the U-shaped tubulose protruded laterally.In addition, from second direction V2 side towards opposite side, with bending section
31a, 31b, 31c, 31d, 31e, 31f, 31g, 31h order are configured.
Cap 32,33 linearly prolongs in a manner of from the multiple bending section 31a~31h of outer side covers on second direction V2
Stretch.Specifically, cap 32,33 possesses：First cap 32, from first direction V1 side cover 4 bending section 31b, 31d,
31f、31h；Second cap 33,4 bending sections 31a, 31c, 31e, 31g are covered from first direction V1 opposite side.
First cap 32 is linked to the straight portion 30a of second direction V2 side one end.First cap 32 is in second
Direction V2 has the straight tube-like of long side.Interval S2 (center between centers between first cap 32 and bending section 31b, 31d, 31f, 31h
Spacing) the interval S1 between adjacent 2 straight portion 30a~30i is substantially identical size.First cap 32 and bending
Interval S2 between portion 31b, 31d, 31f, 31h is, for example, 25mm or so.
Second cap 33 is linked to the straight portion 30i of second direction V2 opposite side one end.Second cap 33 is in L word pipes
Shape.That is, the second cap 33 possesses：Lid main body 33a, there is long side on second direction V2；Extension 33b, it is linked to lid main body
33a one end, and there is long side on V1 in a first direction.Between second cap 33 and bending section 31a, 31c, 31e, 31g
Interval S3 (spacing of center between centers) and adjacent 2 straight portion 30a~30i between interval S1 be substantially identical size.
The interval S3 between lid main body 33a and bending section 31a, 31c, 31e, 31g in second cap 33 is, for example, 25mm or so.Separately
Outside, the interval between the extension 33b in the second cap 33 and straight portion 30a is also 25mm or so.
First introduction part 34 is arranged at one end of infrared heater 6.First introduction part 34 is configured in infrared ray and added
The side on one side of hot device 6.Specifically, the first introduction part 34 is arranged at one end of the first cap 32.Under vertical view state,
First introduction part 34 is partly into the outer shape of infrared heater 6.
Second introduction part 35 is arranged at the other end of infrared heater 6.Second introduction part 35 is configured in infrared ray
The opposite side on one side of heater 6.Second introduction part 35 is configured in the opposite side of the first introduction part 34 on second direction V2.
Specifically, the second introduction part 35 is arranged at one end of the extension 33b in the second cap 33.Under vertical view state, second
Introduction part 35 is partly into the outer shape of infrared heater 6.
<Position adjustment portion>
As shown in figure 1, position adjustment portion 7 is configured in the lower section of chamber 2.Position adjustment portion 7 can adjust heating part 5 and
The relative position of infrared heater 6 and substrate 10.Position adjustment portion 7 possesses move portion 7a and drive division 7b.Move portion 7a is
The columnar part of (Z-direction) extension up and down.Move portion 7a upper end is fixed in the lower surface of heating part 5.Drive division 7b can
Move up and down move portion 7a.Move portion 7a can be such that substrate 10 is moved between heating part 5 and infrared heater 6.Specifically
For, in the state of substrate 10 is positioned in the upper surface of heating part 5, move portion 7a, can by drive division 7b driving
Substrate 10 is set to move up and down (reference picture 5 and Fig. 6).
Drive division 7b is configured in the outside of chamber 2.Therefore, even if assuming to produce particle with drive division 7b driving, lead to
Crossing makes in chamber 2 to be confined space, can also avoid invasion of the particle into chamber 2.
<Delivery section>
Delivery section 8 is configured in chamber 2 between heating part 5 and infrared heater 6.Delivery section 8 being capable of conveying substrate
10.In delivery section 8 formed with can make that move portion 7a passes through by portion 8h.Delivery section 8 possesses along the conveying side of substrate 10
The multiple conveying roller 8a configured to i.e. X-direction.
Multiple conveying roller 8a are remotely configured in the +Y direction side of perisporium 23 and -Y direction side.That is, it is perisporium by portion 8h
Space between the conveying roller 8a of 23 +Y direction side and the conveying roller 8a of the -Y direction side of perisporium 23.
For example, in the +Y direction side of perisporium 23 and -Y direction side, respectively it is configured with prolongs in the Y direction along the X direction
The multiple axles (not shown) stretched.Each conveying roller 8a is rotated by drive mechanism driving (not shown) around each axle.
Fig. 3 is the figure for illustrating conveying roller 8a, substrate 10 and heating part 5 configuration relation.Fig. 3 adds corresponding to substrate
The top view of thermal 1.For convenience, chamber 2 is shown with double dot dash line in figure 3.
In figure 3, reference L1 is the defeated of conveying roller 8a and the -Y direction side of perisporium 23 of the +Y direction side of perisporium 23
Send intervals (hereinafter referred to as " roller away from interval ") of the roller 8a away from (apart).In addition, reference L2 is the Y-direction of substrate 10
Length (hereinafter referred to as " zig ").In addition, reference L3 is the length (hereinafter referred to as " heating of the Y-direction of heating part 5
Minister's degree ").
As shown in figure 3, roller is smaller than zig L2 away from interval L1, and it is bigger (L3 than heating part length L3<L1<L2).
Roller is bigger than heating part length L3 away from interval L1, and thus move portion 7a can be together with heating part 5 by passing through portion's 8h (reference pictures
5 and Fig. 6).
<Temperature detecting part>
As shown in figure 1, temperature detecting part 9 is configured in outside chamber 2.Temperature detecting part 9 can detect the temperature of substrate 10.Tool
For body, temperature detecting part 9 is arranged on the top of top plate 21.Window (not shown) is installed in top plate 21.Temperature detection
The temperature of substrate 10 is detected through the window of top plate 21 in portion 9.Temperature detecting part 9 is, for example, the non-contact temperature for radiating thermometer etc.
Spend sensor.In addition, though 1 temperature detecting part 9 is illustrate only in Fig. 1, but the quantity of temperature detecting part 9 is not limited to 1,
Can also be multiple.For example, it is preferable to it is to configure multiple temperature detecting parts 9 at the central portion of top plate 21 and four angles.
<Recoverer>
Recoverer 11 is connected to the pipeline of relief portion 3 (vavuum pump 13).Recoverer 11 can be reclaimed from being coated on substrate 10
The solvent that is volatilized with liquid of polyimides formation.
<Swing part>
Swing part 12 is configured in the -X direction side of substrate 10 in chamber 2.Swing part 12 can swing substrate 10.In substrate
In 10 heated states, swing part 12 for example makes the direction pendulum of substrate 10 in the direction along X/Y plane or along the Z direction
It is dynamic.In addition, the allocation position of swing part 12 is not limited to the -X direction side of the substrate 10 in chamber 2.Swing part 12 for example also may be used
To be arranged at position adjustment portion 7.
<Substrate heating method>
Then the substrate heating method of present embodiment is illustrated.In the present embodiment, using above-mentioned substrate
Heater 1 heats to substrate 10.Control what is carried out in each part of substrate heating equipment 1 to move by control unit 15
Make.
Fig. 4 is the figure of one for illustrating the action of the substrate heating equipment 1 of first embodiment.Fig. 5 is subsequent figure 4
, the action specification figure of the substrate heating equipment 1 of first embodiment.Fig. 6 is the substrate of subsequent figure 5, first embodiment
The action specification figure of heater 1.
For convenience, in Fig. 4~Fig. 6, relief portion 3 among the inscape of substrate heating equipment 1, gas are eliminated
Supply unit 4, temperature detecting part 9, recoverer 11, the diagram of swing part 12 and control unit 15.
The substrate heating method of present embodiment includes：Depressurize process, the first heating process and the second heating process.
In process is depressurized, subtracted to being coated with polyimides formation with the atmosphere of the receiving space of the substrate 10 of liquid
Pressure.
As shown in figure 4, in process is depressurized, substrate 10 is configured in conveying roller 8a.In addition, in process is depressurized, heating
Portion 5 is located near bottom plate 22.In process is depressurized, heating part 5 and substrate 10 will not be transferred to substrate with the heat of heating part 5
10 degree is remote.In process is depressurized, the power supply of heating part 5 is connected.The temperature of heating part 5 is, for example, 250 DEG C or so.It is another
Aspect, in process is depressurized, disconnect the power supply of infrared heater 6.
In process is depressurized, the atmosphere of the receiving space of substrate 10 is set to be depressurized to below 500Pa from atmospheric pressure.For example,
Cavity pressure is set gradually to drop to 20Pa from atmospheric pressure in decompression process.
In process is depressurized, make the oxygen concentration of the internal atmosphere of chamber 2 low as much as possible.For example, in process is depressurized, make chamber
Vacuum in 2 is below 20Pa.Thereby, it is possible to make the oxygen concentration in chamber 2 be below 100ppm.
After process is depressurized, in the first heating process, substrate 10 is heated with the first temperature.
As shown in figure 5, in the first heating process, heating part 5 is moved to top, substrate 10 is positioned in heating part 5
Upper surface.Thus, by making heating part 5 abut the second surface 10b of substrate 10, the heat of heating part 5 is transferred directly to base
Plate 10.In the first heating process, the temperature of heating part 5 for example maintains 250 DEG C.Therefore, substrate temperature can rise to 250
℃.On the other hand, in the first heating process, the power supply of infrared heater 6 is constantly in off-state.
In addition, in the first heating process, heating part 5 is located at by portion 8h (reference picture 1).For convenience, in Fig. 5
In, the heating part 5 of (position during decompression process) before movement is shown with double dot dash line, is shown in solid (the first heating after movement
Position during process) heating part 5.
In the first heating process, in the state of the atmosphere of decompression process is kept, substrate temperature is 150 DEG C to 300 DEG C
Scope, substrate 10 is heated to so that be coated on substrate 10 polyimides formation liquid volatilization or imidizate.For example,
In the first heating process, the time heated to substrate 10 is below 10min.Specifically, in the first heating process,
The time heated to substrate 10 is set to 3min.For example, in the first heating process, make substrate temperature from 25 DEG C slowly
Rise to 250 DEG C.
After first heating process, in the second heating process, substrate 10 is entered with the second temperature higher than the first temperature
Row heating.In the second heating process, substrate 10 is heated using infrared heater 6, the infrared heater 6 and first adds
The heating part 5 used in thermal technology's sequence is separately set.In addition, the second heating process corresponds to the heating described in claim
Process.
As shown in fig. 6, in the second heating process, heating part 5 is set to be moved to position during than the first heating process more
Top, make substrate 10 close to infrared heater 6.For example, in the second heating process, the temperature of heating part 5 maintains 250
℃.In addition, in the second heating process, the power supply of infrared heater 6 is connected.For example, infrared heater 6 can be with 450
DEG C substrate 10 is heated.Therefore, substrate temperature can rise to 450 DEG C.In the second heating process, substrate 10 is than the
Closer to infrared heater 6 during one heating process, therefore the heat of infrared heater 6 is fully transferred to substrate 10.
In addition, in the second process, heating part 5 is located at conveying roller 8a (shown in Fig. 1 by portion 8h) top and red
The lower section of outside line heater 6.For convenience, in figure 6, (position during the first heating process) before moving is shown with double dot dash line
Heating part 5, be shown in solid it is mobile after (position during the second heating process) heating part 5.
In the second heating process, in the state of the atmosphere of decompression process is kept, substrate 10 is heated, makes substrate
The temperature of temperature from the first heating process is changed into less than 600 DEG C.For example, in the second heating process, make substrate temperature from 250 DEG C
Sharp rise to 450 DEG C.In addition, in the second heating process, cavity pressure is set to maintain below 20Pa.
Second heating process includes the refrigerating work procedure for cooling down substrate 10.For example, in refrigerating work procedure, keeping depressurizing work
Substrate 10 is cooled down in the state of the atmosphere or hypoxic atmosphere of sequence, substrate temperature is become from the temperature of the second heating process
For the temperature that can be conveyed to substrate 10.In refrigerating work procedure, the power supply of infrared heater 6 is disconnected.
By the process Jing Guo the above, volatilization or the acid imide of polyimides formation liquid in substrate 10 are coated
Change, and be coated the rearrangement of the strand when imidizate of the polyimides formation liquid of substrate 10, being capable of shape
Into polyimide film.
As described above, according to present embodiment, infrared heater 6 include being configured to from outer side covers bending section 31a~
31h at least one of cap 32,33, so can be avoided, so as to suppress to bend exposing for bending section 31a~31h
Portion 31a~31h cools compared with other parts.That is, because by cap 32,33 bending section 31a can be heated from outside
~31h at least a portion, so can suppress bending section 31a~31h produces temperature difference with other parts.Therefore, it is possible to carry
The balance of the Temperature Distribution of high IR line heater 6.
In addition, the straight line on second direction V2 in a manner of from the multiple bending section 31a~31h of outer side covers of cap 32,33
Extend shape, thus, it is possible to avoid multiple bending section 31a~31h to expose together, therefore multiple bendings can be suppressed together
Portion 31a~31h cools compared with other parts.That is, because by cap 32,33, can be heated together from outside more
Individual bending section 31a~31h, so can suppress multiple bending section 31a~31h produces temperature difference with other parts.Therefore, it is possible to
Efficiently improve the balance of the Temperature Distribution of infrared heater 6.In addition, infrared heater 6 is additionally included in first direction V1
Upper multiple straight portion 30a~30i that there is long side and configured side by side on the second direction V2 intersected with first direction V1, by
This is reciprocally adjacent by multiple straight portion 30a~30i, it is possible to increase mutual heating temp, therefore can be at relatively high temperatures
Improve the balance of the Temperature Distribution of infrared heater 6.
However, if the first introduction part 34 is got too close to the second introduction part 35, in the presence of temperature and other portions of the part
Tendency of the temperature divided compared to cooling.But according to present embodiment, by by the first introduction part 34 and the second introduction part 35
Both be arranged on the end of cap 32,33 because the first introduction part 34 and the second introduction part 35 are remote to a certain extent,
Infrared heater 6 can be suppressed partly to cool.Therefore, it is possible to improve the balance of the Temperature Distribution of infrared heater 6.This
Outside, according to present embodiment, by the distance (outside of infrared heater 6 for making the first introduction part 34 and the second introduction part 35
The length on one side of shape) it is 225mm or so, even if the thermal expansion of top plate 21 or thermal contraction of chamber 2, can also allow described swollen
Swollen or contraction.
In addition, under vertical view state, the outer shape rectangular shaped of infrared heater 6, the first introduction part 34 configures
In the side on one side of infrared heater 6, the second introduction part 35 configures the opposite side on described one side, following so as to play
Effect.Because turn into the U-shaped bent at 2 positions in infrared heater 6 from the second introduction part 35 to bending section 31h part
Tubulose (i.e. along the shape on three sides in addition to described one side of infrared heater 6), thus with straight tube-like and L word pipes
The situation of shape compares, it is possible to increase the flexibility of infrared heater 6.Therefore, even if described one side of infrared heater 6
Thermal expansion or thermal contraction, due to the flexibility of infrared heater 6, it can also allow the expansion or contraction on described one side.
In addition, under vertical view state, both the first introduction part 34 and the second introduction part 35 enter infrared heating
In the outer shape of device 6, thus when configuring infrared heater 6, because the first introduction part 34 can be avoided and second led
Entering portion 35 turns into obstruction, so the free degree of layout can be improved.For example, multiple infrared heaters 6 are laid on a surface
When, 2 adjacent infrared heaters 6 can be avoided to be interfered at the first introduction part 34 and the second introduction part 35, because
This can fitly lay multiple infrared heaters 6.
In addition, also including heating part 5, configured across substrate 10 in the side opposite with infrared heater 6, and can
Substrate 10 is heated, thus because the heating and the heating of infrared heater 6 of heating part 5 are complemented each other, can more effectively be added
Hot substrate 10.
In addition, also include the chamber 2 that can accommodate substrate 10, heating part 5 and infrared heater 6, thus, it is possible in chamber 2
The heating-up temperature of interior management substrate 10, therefore can effectively heat substrate 10.
In addition, substrate 10, heating part 5 and the shared chamber 2 of infrared heater 6 accommodate, thus, it is possible to share
Heating of the heating part 5 to substrate 10 and heating of the infrared heater 6 to substrate 10 are carried out in chamber 2 together.That is,
Without as heating part 5 and infrared heater 6 are housed inside the situation of mutually different chamber 2, it is necessary to for making base
The time that plate 10 conveys between 2 different chambers 2.Therefore, it is possible to more efficiently carry out the heating of substrate 10.In addition,
Compared with possessing the situation of 2 different chambers 2, device integral miniaturization can be made.
In addition, polyimides formation is only coated on the first surface 10a of substrate 10 with liquid, heating part 5 is configured in base
The first surface 10a of plate 10 opposite side is second surface 10b side, thus plays following effect.Because from heating part 5
Side of the caused heat from the second surface 10b of substrate 10 side towards first surface 10a is transmitted, so can be effectively
Heat substrate 10.In addition, during substrate 10 is heated using heating part 5, can efficiently carry out being applied to substrate 10
The volatilization of polyimides formation liquid or imidizate (such as exhaust in film forming).
In addition, heating part 5 and infrared heater 6 can periodically heat substrate 10, thus play following
Effect.With heating part 5 and infrared heater 6 be only capable of with stationary temperature heating substrate 10 situation compared with, Neng Gougao
Effect ground heating substrate 10 is with the membrance casting condition for the polyimides formation liquid for being adapted to be coated on substrate 10.Therefore, make to be coated on base
The polyimides formation of plate 10 is periodically dried with liquid, can be solidified well.
In addition, also including position adjustment portion 7, heating part 5 can be adjusted and infrared heater 6 is relative with substrate 10
Position, thus, compared with not possessing the situation in position adjustment portion 7, it is easily adjusted the heating-up temperature of substrate 10.For example, can
In the case where the heating-up temperature of substrate 10 to be made uprises, make heating part 5 and infrared heater 6 close to substrate 10, can
In the case of the heating-up temperature step-down of substrate 10 to be made, make heating part 5 and infrared heater 6 away from substrate 10.Therefore,
Easily periodically heat substrate 10.
In addition, position adjustment portion 7 includes that the shifting that substrate 10 moves between heating part 5 and infrared heater 6 can be made
Dynamic portion 7a, so as to be moved by making substrate 10 between heating part 5 and infrared heater 6, by heating part 5 and infrared ray
At least one party in heater 6 is configured in the state of fixed position, can adjust the heating-up temperature of substrate 10.It is therefore not necessary to
The device that can move at least one party of heating part 5 and infrared heater 6 is set in addition, therefore can be with simple structure
Into the heating-up temperature of adjustment substrate 10.
In addition, between heating part 5 and infrared heater 6, the delivery section 8 for being capable of conveying substrate 10 is provided with, defeated
Send formed with that can make that move portion 7a passes through by portion 8h in portion 8, so as to play following effect.Heated making substrate 10
Between portion 5 and infrared heater 6 in the case of movement, because substrate 10 can be made by that by portion 8h, need not make base
Plate 10 moves around delivery section 8.It is therefore not necessary to the device for making substrate 10 mobile around delivery section 8, energy are provided in addition
Enough with the simple movement for being formed swimmingly progress substrate 10.
In addition, heating part 5 is electric hot plate, thus, it is possible to homogenize the heating-up temperature of substrate 10 in the face of substrate 10,
Therefore membrane property can be improved.For example, add in the state of a surface of electric hot plate is abutted with the second surface 10b of substrate 10
Hot substrate 10, the inner evenness of the heating-up temperature thus, it is possible to improve substrate 10.
In addition, also include the temperature detecting part 9 that can detect the temperature of substrate 10, thus, it is possible to grasp substrate 10 in real time
Temperature.For example, being heated by the testing result based on temperature detecting part 9 to substrate 10, the temperature of substrate 10 can be suppressed
Deviate desired value.
In addition, also including recoverer 11, can reclaim from the molten of the polyimides formation liquid volatilization for being coated on substrate 10
Agent, thus, it is possible to prevent from the solvent of polyimides formation liquid volatilization to factory's side discharge.In addition, connected by recoverer 11
In the case of the pipeline of relief portion 3 (vavuum pump 13), the solvent not good liquor again from the volatilization of polyimides formation liquid can be prevented
Change and adverse current in vavuum pump 13.And then the solvent to be volatilized from polyimides formation by the use of liquid can recycle as cleaning fluid.Example
Such as, cleaning fluid can be used in the cleaning of spray nozzle front end, the cleaning of liquid for being attached to scraping part etc., and the scraping part is to attached
The liquid on nozzle is scraped.
In addition, infrared heater 6 is configured in the first surface 10a of substrate 10 side, thus from infrared heating
Heat caused by device 6 is transferred to second surface 10b side, the heating of heating part 5 from the first surface 10a of substrate 10 side
Heating with infrared heater 6 is complemented each other, and can more effectively heat substrate 10.
In addition, by the infrared heating of infrared heater 6, substrate 10 can be warming up to the second temperature in a short time
Degree.In addition, because infrared heater 6 can be made away from the state of, to be heated with substrate 10 to substrate 10 (so-called
Non-contact heating), so the cleaning (so-called cleaning heating) of substrate 10 can be kept.
In addition, because the peak wavelength scope of infrared heater is the scope of more than 1.5 μm and less than 4 μm, and 1.5
More than μm and the wavelength of less than 4 μm of scope is consistent with the absorbing wavelength of glass and water etc., therefore can more effectively add
Hot substrate 10 and the polyimides formation liquid for being coated on substrate 10.
In addition, also including the swing part 12 that can swing substrate 10, substrate 10 is swung thus, it is possible to one side, while heating base
Plate 10, therefore the temperature homogeneity of substrate 10 can be improved.
(the first variation)
Then, the first variation of first embodiment is illustrated using Fig. 7.
Fig. 7 is the top view of the first variation of the infrared heater for showing first embodiment.
In the first variation, relative to first embodiment, the shape of infrared heater is especially different.In Fig. 7
In, pair with first embodiment identical form assign identical reference, description is omitted.
<Infrared heater>
As shown in fig. 7, the length and total length on one side of the infrared heater 6A of this variation outer shape are than
The length of the infrared heater 6 (reference picture 2) of one embodiment is short.For example, the one of infrared heater 6A outer shape
The length on side is 210mm or so.For example, infrared heater 6A total length is 1890mm or so.
Straight portion 30a~30g is arranged in parallel with multiple (such as in this variation be 7) on second direction V2.This change
Interval S1 between the straight portion 30a~30g in adjacent 2 of shape example is more straight portion 30a~30g than adjacent 2 of first embodiment
Between interval S1 it is big.For example, the interval S1 between the straight portion 30a~30g in adjacent 2 of this variation is 30mm or so.
Cap 32,33 is in a manner of from multiple (such as 6 in this variation) bending section 31a~31f of outer side covers
Linearly extend on second direction V2.Specifically, cap 32,33 possesses：First cap 32, from the one of first direction V1
Side covers 3 bending sections 31b, 31d, 31f；Second cap 33, from first direction V1 opposite side cover 3 bending section 31a,
31c、31e。
Between the straight portion 30a~30g in S2 and adjacent 2, interval between first cap 32 and bending section 31b, 31d, 31f
Interval S1 be substantially identical size.Interval between first cap 32 and bending section 31b, 31d, 31f is, for example, a 30mm left sides
It is right.
Interval S3 (spacing of center between centers) between second cap 33 and bending section 31a, 31c, 31e with adjacent 2
Interval S1 between straight portion 30a~30g is substantially identical size.Lid main body 33a in second cap 33 and bending section 31a,
Interval between 31c, 31e is, for example, 30mm or so.In addition, between extension 33b and straight portion 30a in the second cap 33
Every being also 30mm or so.
As described above, according to this variation, the length on one side of the outer shape by making infrared heater 6A and
Total length is shorter than the length of the infrared heater 6 of first embodiment, can realize infrared heater 6A lightweight and
Densification.In addition, the infrared heater 6A of this variation can be without any problems as low temperature with (such as 350 DEG C~400 DEG C
Heating-up temperature) infrared heater use, therefore can realize cost degradation.
(the second variation)
Then, the second variation of first embodiment is illustrated using Fig. 8.
Fig. 8 is the top view of the second variation of the infrared heater for showing first embodiment.
In the second variation, relative to the first variation, the shape of infrared heater is especially different.In fig. 8,
Pair with the first variation identical form assign identical reference, description is omitted.
<Infrared heater>
As shown in figure 8, the length and total length on one side of the infrared heater 6B of this variation outer shape are than
The infrared heater 6A (reference picture 7) of one variation length will be grown.For example, infrared heater 6B total length is 2070mm
Left and right.In addition, the length on one side of infrared heater 6B outer shape is 210mm or so.
Between interval portion 30a~30g more straight than adjacent 2 between first cap 32 and bending section 31b, 31d, 31f
It is small to be spaced S1.Interval between first cap 32 and bending section 31b, 31d, 31f is, for example, 15mm or so.
Between interval portion 30a~30g more straight than adjacent 2 between second cap 33 and bending section 31a, 31c, 31e
It is small to be spaced S1.The interval S3 between lid main body 33a and bending section 31a, 31c, 31e in second cap 33 is, for example, a 15mm left sides
It is right.In addition, the interval between extension 33b and straight portion 30a in the second cap 33 is 30mm or so.
As described above, according to this variation, by making interval S2, S3 between cap 32,33 and bending section 31a~31f
Interval S1 between than adjacent 2 straight portion 30a~30g is small, plays following effect.With cap 32,33 and bending section 31a~
The situation that interval S2, S3 between 31f are interval more than the S1 between adjacent 2 straight portion 30a~30g compares, Neng Gougeng
Exposing for bending section 31a~31f is reliably avoided, therefore can more reliably suppress bending section 31a~31f and other parts phase
Than cooling.That is, because can more reliably heat at least one of bending section 31a~31f from outside by cap 32,33
Point, so can more reliably suppress bending section 31a~31f produces temperature difference with other parts.Therefore, it is possible to more reliably carry
The balance of high IR line heater 6B Temperature Distribution.
(second embodiment)
Then, second embodiment of the present invention is illustrated using Fig. 9~Figure 12.
Fig. 9 is the top view of the infrared heater 206 of second embodiment.
In this second embodiment, it is especially different relative to first embodiment, the shape of infrared heater.Scheming
In 9, pair with first embodiment identical form assign identical reference, description is omitted.
<Infrared heater>
As shown in figure 9, under vertical view state, the outer shape rectangular shaped of infrared heater 206.Infrared heating
Point-symmetrically shape (the axisymmetric shape) under vertical view state of device 206.
First cap 32 is linked to the straight portion 30a of second direction V2 side one end.First cap 32 is in second
There is the straight tube-like of long side on the V2 of direction.
Second cap 233 is linked to the straight portion 30i of second direction V2 opposite side one end.Second cap 233 be in
There is the straight tube-like of long side on second direction V2.
First introduction part 34 is configured in a corner of infrared heater 206.Specifically, the first introduction part 34 is set
It is placed in one end of the first cap 32.
Second introduction part 35 is configured in the diagonal section in a corner.Specifically, the second introduction part 35 is arranged at
One end of second cap 233.That is, on V1 in a first direction and second direction V2, the second introduction part 35 is configured in first and led
Enter the opposite side in portion 34.
Figure 10 is the figure of one for illustrating the action of the substrate heating equipment 201 of second embodiment.After Figure 11 is
Continue the action specification figure of Figure 10, second embodiment substrate heating equipment 201.Figure 12 is that subsequent figure 11, second is implemented
The action specification figure of the substrate heating equipment 201 of mode.
For convenience, in Figure 10~Figure 12, eliminate relief portion 3 among the inscape of substrate heating equipment 201,
Gas supply part 4, delivery section 8, temperature detecting part 9, recoverer 11, the diagram of swing part 12 and control unit 15.
In this second embodiment, it is especially different relative to first embodiment, the composition in position adjustment portion 207.
In Figure 10~Figure 12, pair with first embodiment identical form assign identical reference, description is omitted.
<Position adjustment portion>
As shown in Figure 10, position adjustment portion 207 possesses receiving portion 270, move portion 275 and drive division 279.
Receiving portion 270 is configured in the downside of chamber 2.Receiving portion 270 can accommodate move portion 275 and drive division 279.Hold
Receiving portion 270 is formed as the box-like of cuboid.Specifically, receiving portion 270 with lower component by being formed：First supporting of rectangular plate-like
Plate 271；Second support plate 272 of the rectangular plate-like opposed with the first support plate 271；Plate 273 is surrounded, with the first support plate 271
And second the neighboring of support plate 272 be connected, and in a manner of surrounding around move portion 275 and drive division 279
Cover move portion 275 and drive division 279.Alternatively, it is also possible to be not provided with surrounding plate 273.That is, position adjustment portion 207 at least has
Standby first support plate 271, move portion 275 and drive division 279.Such as it can also be provided with and surround the overall exterior of device
Lid.
The neighboring of first support plate 271 is connected to the lower end of the perisporium 23 of chamber 2.First support plate 271 also serves as
The bottom plate of chamber 2 works.Heating part 205 is configured with the first support plate 271.Specifically, heating part 205 in the chamber 2 by
First support plate 271 supports.
Plate 273 is surrounded to be continuously connected about 23 with perisporium.Chamber 2 is configured to accommodate substrate 10 in confined space.
Such as top plate 21 is seamlessly engaged by using welding etc., as the first support plate 271 of bottom plate and respectively connecting for perisporium 23
Socket part, it is possible to increase the air-tightness in chamber 2.
Move portion 275 possesses pin 276, telescoping tube 277 and base station 278.
Pin 276 is capable of the second surface 10b of supporting substrates 10, and can be in second surface 10b normal direction (Z side
To) on move.Pin 276 is the bar-like member extended up and down.The front end (upper end) of pin 276 can be connected to the second table of substrate 10
Face 10b, and being capable of the second surface 10b away from substrate 10.
Multiple pins 276 are provided with spaced intervals on the direction (X-direction and Y-direction) parallel with second surface 10b.
Multiple pins 276 are respectively formed as roughly the same length.The front-end configuration of multiple pins 276 is in the face parallel with second surface 10b
Interior (in X/Y plane).
Telescoping tube 277 is arranged between the first support plate 271 and base station 278.Telescoping tube 277 is to surround pin 276
The tubular part that the mode of surrounding is covered and extended up and down.Telescoping tube 277 the first support plate 271 and base station 278 it
Between stretch freely up and down.Telescoping tube 277 is, for example, vacuum corrugated pipe.
Telescoping tube 277 be provided with it is multiple, it is identical with the quantity of multiple pins 276.Front end (upper end) quilt of multiple telescoping tubes 277
It is fixed on the first support plate 271.Specifically, on the first support plate 271 formed with making the first support plate 271 in thickness direction
Multiple inserting hole 271h of upper shed.Each inserting hole 271h internal diameter is in the same size with the external diameter of each telescoping tube 277.Respectively
The front end of telescoping tube 277 is for example fitted each inserting hole 271h for being fixed on the first support plate 271.
Base station 278 is the plate-shaped member opposed with the first support plate 271.The upper surface of base station 278 is in along substrate 10
Second surface 10b tabular surface.The cardinal extremity (lower end) of multiple pins 276 and multiple flexible is fixed with the upper surface of base station 278
The cardinal extremity (lower end) of pipe 277.
The front end of multiple pins 276 can insert heating part 205.In heating part 205, in second surface 10b normal direction
The upper position overlapping with each inserting hole 271h (inner space of each telescoping tube 277) of the first support plate 271, formed with making heating
Multiple inserting hole 205h that portion 205 is open in second surface 10b normal direction (thickness direction of electric hot plate).
The front end of multiple pins 276 can be via the inner space of each telescoping tube 277 and each inserting hole of heating part 205
205h and the second surface 10b for being connected to substrate 10.Therefore, can be with parallel to X/Y plane by the front end of multiple pins 276
Mode supporting substrates 10.Multiple pins 276 while supporting the substrate 10 being contained in chamber 2, (join by the Z-direction movement in an edge chamber 2
According to Figure 10~Figure 12).
Drive division 279 is configured in the outside of chamber 2 i.e. in receiving portion 270.So even assume with the drive of drive division 279
Move and produce particle, be confined space by making in chamber 2, can also avoid invasion of the particle into chamber 2.
<Substrate heating method>
Then, the substrate heating method of present embodiment is illustrated.In the present embodiment, using above-mentioned substrate
Heater 201 heats to substrate 10.Controlled in the action that each part of substrate heating equipment 201 is carried out by control unit 15
System.In addition, for first embodiment identical process, eliminate its detailed description.
The substrate heating method of present embodiment includes decompression process, the first heating process and the second heating process.
In process is depressurized, depressurized to being coated with polyimides formation with the substrate 10 of liquid.
As shown in Figure 10, in process is depressurized, substrate 10 is away from heating part 205.Specifically, before making multiple pins 276
End is connected to the second surface of substrate 10 via the inner space of each telescoping tube 277 and each inserting hole 205 of heating part 205
10b, and substrate 10 is increased, thus make substrate 10 away from heating part 205.In process is depressurized, heating part 205 and substrate
10 will not be transferred to the heat of heating part 205 substrate 10 degree it is remote.In process is depressurized, the electricity of heating part 205 is connected
Source.The temperature of heating part 205, e.g. 250 DEG C or so.On the other hand, in process is depressurized, infrared heater 206 is disconnected
Power supply.
After process is depressurized, in the first heating process, substrate 10 is heated with the temperature of heating part 205.
As shown in figure 11, in the first heating process, by making multiple second surfaces of the front end of pin 276 away from substrate 10
10b, substrate 10 is set to abut heating part 205.That is, substrate 10 is made to be positioned in the upper surface of heating part 205.Accordingly, because heating part
205 abut the second surface 10b of substrate 10, so the heat of heating part 205 can be transferred directly to substrate 10.Heating part 205
Temperature for example maintains 250 DEG C in the first heating process.Therefore, substrate temperature can rise to 250 DEG C.On the other hand, exist
In first heating process, the power supply of infrared heater 206 is constantly in off-state.
After first heating process, in the second heating process, substrate 10 is heated with second temperature.
As shown in figure 12, in the second heating process, by making substrate 10 rise to position during than the first heating process
Higher position, make substrate 10 close to infrared heater 206.For example, in the second heating process, the temperature of heating part 205
Degree maintains 250 DEG C.In addition, in the second heating process, the power supply of infrared heater 206 is connected.For example, infrared heating
Device 206 can be heated with 450 DEG C to substrate 10.Therefore, substrate temperature can rise to 450 DEG C.In the second heating process
In, substrate 10 than in the first heating process closer to infrared heater 206, therefore the heat quilt of infrared heater 206
Fully it is transferred to substrate 10.
Afterwards, by with first embodiment identical process, be coated the polyimides formation liquid in substrate 10
Volatilization or imidizate, and be coated the strand when imidizate of the polyimides formation liquid of substrate 10
Rearrangement, polyimide film can be formed.
As described above, according to present embodiment, under vertical view state, the outer shape of infrared heater 206 is rectangular
Shape, the first introduction part 34 configures to be configured in a corner in a corner of infrared heater 206, the second introduction part 35
Diagonal section, thus, under vertical view state, the allocation position of the first introduction part 34 and the second introduction part 35 is with infrared heater
Turn into point symmetry on the basis of 206 center, and the first introduction part 34 and the second introduction part 35 compared with far from.Thus,
Even if in the case where the first introduction part 34 and the second introduction part 35 cool compared with other parts, will not also reduce mutual
Cool temperature, so as to avoid the partly excessive drop temperature of infrared heater 206, therefore can improve infrared ray as much as possible
The balance of the Temperature Distribution of heater 206.
In addition, under vertical view state, the point-symmetrically shape of infrared heater 206, thus with vertical view state, it is infrared
Line heater 206 compares in the situation of asymmetrical shape, can more reliably improve the Temperature Distribution of infrared heater 206
Balance.
In addition, move portion 275 include be capable of supporting substrates 10 second surface 10b and can be second surface 10b's
The multiple pins 276 moved in normal direction, the front end of multiple pins 276 are configured in the face parallel with second surface 10b, so as to
Play following effect.Substrate 10 can be heated in the state of stably supporting substrates 10, therefore coating can be made
In the polyimides formation liquid stably film forming of substrate 10.
In addition, in heating part 205, formed with making heating part 205 in the multiple of second surface 10b normal direction opening
Inserting hole 205h, the front end of each pin 276 can abut second surface 10b via each inserting hole 205h, so as to play following effect
Fruit.Handing-over of the substrate 10 between multiple pins 276 and heating part 205 can be carried out in a short time, therefore can efficiently be adjusted
The heating-up temperature of integral basis plate 10.
(the 3rd embodiment)
Then, third embodiment of the present invention is illustrated using Figure 13.
Figure 13 is the top view of the infrared heater 306 of the 3rd embodiment.
In the third embodiment, it is especially different relative to first embodiment, the shape of infrared heater.Scheming
In 13, pair with first embodiment identical form assign identical reference, description is omitted.
<Infrared heater>
As shown in figure 13, under vertical view state, the outer shape rectangular shaped of infrared heater 306.
First cap 32 is linked to the straight portion 30a of second direction V2 side one end.First cap 32 is in second
Direction V2 has the straight tube-like of long side.
Second cap 333 is linked to the straight portion 30i of second direction V2 opposite side one end.Second cap 333 is in U-shaped
Tubulose.That is, the second cap 333 possesses：Lid main body 333a, there is long side on second direction V2；First extension 333b, link
In lid main body 333a one end, and there is long side in a first direction on V1；Second extension 333c, is linked to the first extension
Portion 333b one end, and there is long side in a manner of from the first cap of outer side covers 32 on second direction V2.In addition, the
In the interval S3 and the second cap 333 between lid main body 333a and bending section 31a, 31c, 31e, 31g in two caps 333
Interval S4 between two extension 333c and the first cap 32 is substantially identical size.
First introduction part 34 and the second introduction part 35 are adjacently configured in a corner of infrared heater 306.
In first direction V1, the first introduction part 34 is configured than the inside of the second introduction part 35.That is, the first introduction part 34 is configured in curved
Between pars convoluta 31h and the second introduction part 35.
As described above, according to present embodiment, under vertical view state, the outer shape of infrared heater 306 is rectangular
Shape, the first introduction part 34 and the second introduction part 35 are adjacently configured in a corner of infrared heater 306, and thus
The distance between one introduction part 34 and the second introduction part 35 become minimum, therefore being capable of infrared heater always as much as possible
306 thermal expansion or thermal contraction.
(the 4th embodiment)
Then, the 4th embodiment of the present invention is illustrated using Figure 14.
Figure 14 is the top view of the unit heater 560 of the 4th embodiment.
In the 4th embodiment, relative to first embodiment, the allocation plan of infrared heater is especially different.
In fig. 14, pair formed with first embodiment identical and assign identical reference, description is omitted.
<Unit heater>
As shown in figure 14, the substrate heating equipment of present embodiment possesses unit heater 560, the unit heater
560 are formed by laying multiple (such as being in the present embodiment 11) infrared heaters 6.
Unit heater 560 possesses the first infrared heater group 561, the second infrared heater group 562 and the 3rd
Infrared heater group 563.
First infrared heater group 561 possesses multiple (such as being 4 in the present embodiment) first infrared heating
Device 561a~561d.It is configured at first direction V1 (direction) to multiple first infrared heater 561a~561d layings.Separately
Outside, enter from first direction V1 side towards opposite side, with first infrared heater 561a, 561b, 561c, 561d order
Row configuration.
Second infrared heater group 562 possesses multiple (such as being 3 in the present embodiment) second infrared heating
Device 562a~562c.It is configured at the side parallel with first direction V1 to multiple second infrared heater 562a~562c layings
To.In addition, from the side in the direction parallel with first direction V1 towards opposite side, with second infrared heater 562a, 562b,
562c order is configured.
3rd infrared heater group 563 possesses multiple (such as being 4 in the present embodiment) the 3rd infrared heating
Device 563a~563d.It is configured at the side parallel with first direction V1 to multiple 3rd infrared heater 563a~563d layings
To.In addition, from the side in the direction parallel with first direction V1 towards opposite side, with the 3rd infrared heater 563a, 563b,
563c, 563d order are configured.
Second infrared heater 562a~562c, with 2 adjacent first infrared heater 561a~561d's
The mode of boundary portion adjoining, on second direction V2 (with one to the direction intersected) with the first infrared heater 561a
~561d layings ground configuration.And then the second infrared heater 562a~562c, on second direction V2, with adjacent 2
3rd infrared heater 563a~563d boundary portion adjoining mode, on second direction V2 with the 3rd infrared heater
563a~563d layings ground configuration.That is, second infrared heater 562a~562c is configured to be sandwiched on second direction V2
The boundary portion of 2 adjacent first infrared heater 561a~561d and 2 adjacent the 3rd infrared heater 563a~
Between 563d boundary portion.
Under vertical view state, second infrared heater 562a~562c have with the first infrared heater 561a~
561d and the 3rd infrared heater 563a~563d identical shapes.In addition, first infrared heater 561a~561d,
Second infrared heater 562a~562c and the 3rd infrared heater 563a~563d, corresponding to first embodiment
Infrared heater 6.
As described above, according to present embodiment, possesses unit heater 560, the unit heater 560 is configured to one
Multiple infrared heaters 6 are laid on surface, so as to play following effect.Because possesses above-mentioned infrared heater 6, Neng Gouti
The balance of the Temperature Distribution of high unit heater 560.In addition, it can individually control the situation of multiple infrared heaters 6
Under, because the output of the infrared heater 6 of a part can be made bigger than the output of other infrared heaters 6, phase
The good heating of Temperature Distribution can be carried out for substrate 10.For example, in the case where the temperature of the corner of substrate 10 is relatively low, make
Configuration is bigger than the output of other infrared heaters 6 in the output of the infrared heater 6 of position corresponding with the part, by
This only improves the temperature of the part, so as to improve the overall Temperature Distribution of substrate 10.
In addition, unit heater 560 includes：Multiple first infrared heater 561a~561d, in the first direction V1 spread
If ground configures；Multiple second infrared heater 562a~562c, configured with laying along the direction parallel with first direction V1, the
Two infrared heater 562a~562c, to be abutted with the boundary portion of 2 adjacent first infrared heater 561a~561d
Mode, on the second direction V2 intersected with first direction V1 with first infrared heater 561a~561d laying match somebody with somebody
Put, so as to play following effect.Because first infrared heater 561a~561d Temperature Distribution adds with the second infrared ray
Hot device 562a~562c Temperature Distribution can be supplemented reciprocally, so unit heater 560 can be improved further
The balance of Temperature Distribution.
And then on second direction V2, second infrared heater 562a~562c and the 3rd infrared heater 563a
~563d is configured so that second infrared heater 562a~562c and 2 adjacent the 3rd infrared heaters to laying
563a~563d boundary portion adjoining.Because the 3rd infrared heater 563a~563d Temperature Distribution adds with the second infrared ray
Hot device 562a~562c Temperature Distribution can be supplemented reciprocally, so unit heater 560 can be improved further
The balance of Temperature Distribution.
In addition, under vertical view state, second infrared heater 562a~562c has and the first infrared heater
561a~561d and the 3rd infrared heater 563a~563d identical shapes, so as to play following effect.With bowing
Have first infrared heater 561a~561d and the 3rd infrared depending on second infrared heater 562a~562c under state
The situation of shapes different line heater 563a~563d is compared, and can more reliably improve the temperature point of unit heater 560
The balance of cloth.Even if in addition, changing substrate size, also can equally spaced be configured by changing the number of infrared heater 6
Infrared heater 6, and the good heating of Temperature Distribution can be carried out to substrate 10.However, it is simple in infrared heater
Straight tube in the case of, if substrate size becomes big, need the length elongation for making straight tube, therefore exist and be difficult to allow infrared ray to add
The possibility of the thermal expansion of hot device.But according to this composition, even if substrate size becomes big, the size of infrared heater 6 is not yet
It can change, therefore can easily allow the thermal expansion of infrared heater 6.
(the 5th embodiment)
Then, the 5th embodiment of the present invention is illustrated using Figure 15.
Figure 15 is the top view of the unit heater 660 of the 5th embodiment.
In the 5th embodiment, relative to the 4th embodiment, the allocation plan of infrared heater is especially different.
In fig.15, pair formed with the 4th embodiment identical and assign identical reference, description is omitted.
<Unit heater>
As shown in figure 15, the unit heater 660 of present embodiment, it is red to possess the first infrared heater group 561, second
Outside line heater group 662 and the 3rd infrared heater group 563.
Under vertical view state, second infrared heater 662a~662c have make the first infrared heater 561a~
561d or the 3rd infrared heater 563a~563d be rotated by 90 ° after shape.Specifically, under vertical view state, second
Infrared heater 662a~662c, having makes first infrared heater 561a~561d or the 3rd infrared heater
The shape that 563a~563d is starting point after (clockwise) is rotated by 90 ° to the right using its center.In addition, the first infrared heater
561a~561d, second infrared heater 662a~662c and the 3rd infrared heater 563a~563d correspond to first
The infrared heater 6 of embodiment.
As described above, according to present embodiment, under vertical view state, second infrared heater 662a~662c has and made
First infrared heater 561a~561d or the 3rd infrared heater 563a~563d be rotated by 90 ° after shape, thus
Utilize first infrared heater 561a~561d, second infrared heater 662a~662c and the 3rd infrared heater
563a~563d, the Temperature Distribution as caused by the shape of infrared heater 6 can be reciprocally supplemented, so can be further
Improve the balance of the Temperature Distribution of unit heater 660 in ground.
In addition, all shapes of each component parts shown in above-mentioned example or combination etc. are one, will based on design
Various changes can be carried out by asking etc..
In addition, although in the above-described embodiment, substrate, heating part and infrared heater are housed inside shared chamber
It is interior, but the present invention is not limited to this.For example, it is also possible to be heating part and infrared heater be housed inside it is mutually different
Chamber.
In addition, although in the above-described embodiment, both heating part and infrared heater can periodically add
Hot substrate, but the present invention is not limited to this.For example, it is also possible to it is at least one party's energy of heating part and infrared heater
It is enough periodically to heat substrate.In addition it is also possible to it is both heating part and infrared heater are only capable of with stationary temperature
Heat substrate.
Furthermore, it is possible to the inwall of chamber is set to reflect infrared ray in the above-described embodiment.For example, it may be make the interior of chamber
Wall is the minute surface (reflecting surface) formed by the metal of aluminium etc..Thus, the inwall with making chamber is the material phase that can absorb infrared ray
Compare, it is possible to increase the temperature homogeneity of intracavitary.
It is although of the invention and unlimited in addition, in the above-described embodiment, used multiple conveying rollers as delivery section
Due to this.For example, as delivery section, conveyer belt can be used, linear electromechanical actuator can also be used.For example, it is also possible to energy
It is enough to add conveyer belt and linear electromechanical actuator in the X direction.Thereby, it is possible to adjust the fed distance of the substrate in X-direction.
In addition it is also possible to the structure beyond using the composition (composition that portion is formed through in delivery section) shown in Fig. 3
In the case of as delivery section so that size of the heating part under vertical view state is more than or equal to chi of the substrate under vertical view state
It is very little.Thus, compared with the situation small with making size of size of the heating part under vertical view state than substrate under vertical view state, energy
The inner evenness of enough heating-up temperatures for further improving substrate.
Although in addition, in the above-described embodiment, in decompression process and the first heating process, connect the electricity of heating part
Source, the power supply of infrared heater is disconnected, but the present invention is not limited to this.For example, it is also possible to be, in decompression process and
The power supply of heating part and infrared heater is connected in first heating process.
In addition it is also possible to be the outer shape rectangular shaped of infrared heater in the above-described embodiment, first leads
Enter the central portion of portion and the second introduction part on one side of infrared heater to be opposed to configure.According to this composition, because first
Introduction part is remote to a certain extent with the second introduction part, partly cools so can suppress infrared heater.Therefore, it is possible to
Improve the balance of the Temperature Distribution of infrared heater.
In addition, each inscape recorded as above-mentioned embodiment or its variation, is not departing from the present invention's
In the range of purport, can carry out it is appropriately combined, in addition it is also possible among the obtained multiple inscapes of combination, suitably
Without using the inscape of a part.
Hereinafter, the present invention is more specifically illustrated by embodiment, but the present invention is not by following embodiment
Restriction.
The present inventor is confirmed by following evaluation：By making infrared heater include with from outer side covers bending section
The cap that configures of mode, it is possible to increase the balance of the Temperature Distribution of infrared heater.
(comparative example)
The infrared heater of comparative example uses the infrared heater for only possessing straight portion and bending section.That is, comparing
Do not possess cap in example.
(embodiment)
The infrared heater of embodiment uses the infrared heater for possessing straight portion, bending section and cap.I.e., relatively
In comparative example, the infrared heater of embodiment is also equipped with cap.In addition, the infrared heater of embodiment corresponds to first in fact
Apply the infrared heater 6 (reference picture 2) of mode.
(appreciation condition)
Hereinafter, to the temperature of substrate in comparative example and embodiment, when being heated by infrared heater
The appreciation condition of distribution illustrates.
Substrate is used as using glass substrate.Substrate is configured in the underface of infrared heater.The temperature of substrate is 450
℃。
In a substrate, it is (that is, overlapping in the normal direction of substrate to part corresponding with the length direction central portion in straight portion
Part) temperature (hereinafter referred to as " straight portion's temperature ") measure.In addition, in a substrate, pair part corresponding with bending section
The temperature (hereinafter referred to as " bending section temperature ") of (that is, in the overlapping part of the normal direction of substrate) measures.Moreover, calculate
The difference of straight portion's temperature and bending section temperature.
(evaluation result of the Temperature Distribution of the substrate when being heated by infrared heater)
In the case of comparative example, bending section is darker than straight portion.It can thus be appreciated that bending section temperature is lower than straight portion's temperature.Comparing
In the case of example, temperature difference is 5.8 DEG C.
In the case of the embodiment, bending section is darker than straight portion.But the bending section of embodiment is than the bending section of comparative example
It is bright.Even if it follows that in embodiment, bending section temperature is lower than straight portion's temperature, but its reduction degree is smaller than comparative example.
In the case of embodiment, temperature difference is 2.4 DEG C.
Known as described above, making infrared heater include the lid to be configured in a manner of outer side covers bending section
Portion, it is possible to increase the balance of the Temperature Distribution of infrared heater.In addition, understand that the Temperature Distribution of substrate can be improved.
Description of reference numerals
1st, 201 substrate heating equipment
2 chambers
3 relief portions
5th, 205 heating part
5a mounting surfaces
6th, the infrared heater of 6A, 6B, 206,306
7th, 207 position adjustment portion
7a, 275 move portions
8 delivery sections
8h passes through portion
9 temperature detecting parts
10 substrates
10a first surfaces
10b second surfaces
11 recoverers
The straight portion of 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i
31a, 31b, 31c, 31d, 31e, 31f, 31g, 31h bending section
32 first caps (cap)
33rd, 233,333 second cap (cap)
34 first introduction parts
35 second introduction parts
205h inserting holes
276 pins
560th, 660 unit heater
The infrared heater of 561a, 561b, 561c, 561d first
The infrared heater of 562a, 562b, 562c, 662a, 662b, 662c second
Interval between 2 adjacent S1 straight portions
Interval between S2, S3 cap and bending section
V1 first directions
V2 second directions
Claims (29)
1. a kind of substrate heating equipment, including：
Relief portion, the atmosphere of the receiving space of the substrate to being coated with solution depressurize；
Infrared heater, substrate described in infrared heating can be passed through；
The infrared heater is in the tubulose in the bending of multiple positions, and including：Bending section, in a manner of protruding laterally
Bending；Cap, it is configured at least a portion from bending section described in outer side covers.
2. substrate heating equipment as claimed in claim 1, it is characterised in that the infrared heater also includes multiple straight
Portion, the multiple straight portion have long side in a first direction, and in the second direction intersected with the first direction side by side
Configuration,
The bending section links the end in the straight portion of adjacent 2,
The cap linearly extends in this second direction in a manner of from the multiple bending sections of outer side covers.
3. substrate heating equipment as claimed in claim 2, it is characterised in that compare phase in the interval between the cap and bending section
Interval between 2 adjacent straight portions is small.
4. the substrate heating equipment as described in any one of claims 1 to 3, it is characterised in that the infrared heater
Also include：First introduction part, it is arranged on one end of the infrared heater；Second introduction part, it is arranged on the infrared ray and adds
The other end of hot device,
At least one party in first introduction part and second introduction part is arranged on the end of the cap.
5. substrate heating equipment as claimed in claim 4, it is characterised in that under vertical view state, the infrared heater
Outer shape rectangular shaped,
The central portion of first introduction part and second introduction part on one side of the infrared heater is opposed to match somebody with somebody
Put.
6. substrate heating equipment as claimed in claim 4, it is characterised in that under vertical view state, the infrared heater
Outer shape rectangular shaped,
First introduction part is configured in the side on one side of the infrared heater,
Opposite side of the second introduction part configuration on described one side.
7. substrate heating equipment as claimed in claim 4, it is characterised in that under vertical view state, the infrared heater
Outer shape rectangular shaped,
First introduction part is configured in a corner of the infrared heater,
Diagonal section of the second introduction part configuration in a corner.
8. substrate heating equipment as claimed in claim 7, it is characterised in that under vertical view state, the infrared heater
Point-symmetrically shape.
9. substrate heating equipment as claimed in claim 4, it is characterised in that under vertical view state, the infrared heater
Outer shape rectangular shaped,
First introduction part and second introduction part are adjacently configured at a corner of the infrared heater.
10. the substrate heating equipment as described in any one of claim 4~9, it is characterised in that under vertical view state, institute
At least a portion for stating the first introduction part and second introduction part enters in the outer shape of the infrared heater.
11. the substrate heating equipment as described in any one of claim 1~10, it is characterised in that also including heater list
Member, the unit heater are configured to lay multiple infrared heaters on a surface.
12. substrate heating equipment as claimed in claim 11, it is characterised in that the unit heater includes：Multiple first
Infrared heater, in one direction laying configuration；Multiple second infrared heaters, with one to parallel direction
Upper berth establishing is put,
Second infrared heater by with the boundary portion of 2 adjacent first infrared heaters abut in a manner of,
Configured with one to being laid with first infrared heater on the direction intersected.
13. substrate heating equipment as claimed in claim 12, it is characterised in that under vertical view state, second infrared ray
Heater has and the first infrared heater identical shape.
14. substrate heating equipment as claimed in claim 12, it is characterised in that under vertical view state, second infrared ray
Heater have make first infrared heater be rotated by 90 ° after shape.
15. the substrate heating equipment as described in any one of claim 1~14, it is characterised in that also including heating part, institute
State heating part to configure in the side opposite with the infrared heater across the substrate, and the substrate can be heated.
16. substrate heating equipment as claimed in claim 15, it is characterised in that also include that the substrate, described can be accommodated
Heating part and the chamber of the infrared heater.
17. substrate heating equipment as claimed in claim 16, it is characterised in that the substrate, the heating part and described
The shared chamber of infrared heater accommodates.
18. the substrate heating equipment as described in any one of claim 15~17, it is characterised in that the solution is only applied
Cloth the substrate first surface,
The heating part is configured in the side opposite with the first surface of the substrate i.e. side of second surface.
19. the substrate heating equipment as described in any one of claim 15~18, it is characterised in that the heating part and
At least one party in the infrared heater can periodically heat the substrate.
20. the substrate heating equipment as described in any one of claim 15~19, it is characterised in that also including position adjustment
Portion, the position adjustment portion can adjust at least one party and the substrate in the heating part and the infrared heater
Relative position.
21. substrate heating equipment as claimed in claim 20, it is characterised in that the position adjustment portion is described including that can make
The move portion that substrate moves between the heating part and the infrared heater.
22. substrate heating equipment as claimed in claim 21, it is characterised in that in the heating part and the infrared heating
The delivery section of the substrate can be conveyed by being provided between device,
In the delivery section formed with can make what the move portion passed through to pass through portion.
23. the substrate heating equipment as described in claim 21 or 22, it is characterised in that the move portion includes multiple pins, institute
Second surface with the first surface opposite side of the substrate can be supported by stating multiple pins, and can be in the second surface
Normal direction on move,
The front end of the multiple pin is configured in the face parallel with the second surface.
24. substrate heating equipment as claimed in claim 23, it is characterised in that in the heating part formed with multiple inserts
Hole, make normal direction upper shed of the heating part in the second surface,
The front end of the multiple pin can be connected to the second surface via the multiple inserting hole.
25. the substrate heating equipment as described in any one of claim 15~24, it is characterised in that the heating part is electricity
Hot plate.
26. the substrate heating equipment as described in any one of claim 1~25, it is characterised in that also include detecting
The temperature detecting part of the substrate temperature.
27. the substrate heating equipment as described in any one of claim 1~25, it is characterised in that also including recoverer, energy
Solvent of enough recovery from the solution evaporation for being coated on the substrate.
28. a kind of substrate heating method, it is characterised in that include following process：
Process is depressurized, the atmosphere of the receiving space of the substrate to being coated with solution depressurizes；
Heating process, by substrate described in infrared heating,
In the heating process, using infrared heater, by substrate described in infrared heating,
The infrared heater is in the tubulose in the bending of multiple positions, and including：Bending section, in a manner of protruding laterally
Bending；Cap, it is configured at least a portion from bending section described in outer side covers.
29. a kind of infrared heater, infrared heating substrate can be passed through, it is characterised in that the infrared heater is in
In the tubulose of multiple positions bending, and including：Bending section, bent in a manner of protruding laterally；Cap, it is configured to from outside
Cover at least a portion of the bending section.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016167793A JP6757629B2 (en) | 2016-08-30 | 2016-08-30 | Substrate heating device, substrate heating method and infrared heater |
| JP2016-167793 | 2016-08-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107785240A true CN107785240A (en) | 2018-03-09 |
| CN107785240B CN107785240B (en) | 2023-06-20 |
Family
ID=61437446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710573155.8A Active CN107785240B (en) | 2016-08-30 | 2017-07-14 | Substrate heating device, substrate heating method, and infrared heater |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6757629B2 (en) |
| KR (3) | KR102336748B1 (en) |
| CN (1) | CN107785240B (en) |
| TW (2) | TWI762146B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383944A (en) * | 2018-12-29 | 2020-07-07 | 东京应化工业株式会社 | Substrate heating apparatus, substrate processing system, and substrate heating method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030081945A1 (en) * | 2001-10-29 | 2003-05-01 | Dainippon Screen Mfg. Co., Ltd. | Heat treating apparatus and method |
| JP2005011852A (en) * | 2003-06-16 | 2005-01-13 | Tokyo Electron Ltd | Device and method for heat treatment |
| JP2005019479A (en) * | 2003-06-23 | 2005-01-20 | Tokyo Electron Ltd | Heating means, placing base, and heat treatment equipment |
| CN102810498A (en) * | 2011-06-02 | 2012-12-05 | 东京应化工业株式会社 | Heating device, coating device and heating method |
| CN104779181A (en) * | 2014-01-15 | 2015-07-15 | 株式会社东芝 | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
| JP2015141965A (en) * | 2014-01-28 | 2015-08-03 | 東京応化工業株式会社 | Recovery device, and substrate processing device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3060663B2 (en) * | 1991-11-15 | 2000-07-10 | 井関農機株式会社 | Tractor transmission case connection structure |
| JP3060633U (en) * | 1998-12-28 | 1999-09-07 | アイリスオーヤマ株式会社 | Assembled chest |
| JP3060663U (en) * | 1998-12-29 | 1999-09-07 | クリーン・テクノロジー株式会社 | Heating equipment |
| EP1113412B1 (en) * | 1999-12-27 | 2014-05-21 | Japan Display Inc. | Liquid crystal display apparatus and method for driving the same |
| JP2001210632A (en) | 2000-01-28 | 2001-08-03 | Sharp Corp | Formation method of polyimide film |
| JP2006170524A (en) | 2004-12-15 | 2006-06-29 | Tdk Corp | Kiln |
| US8573836B2 (en) * | 2006-10-26 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for evaluating a substrate mounting device |
| WO2009104371A1 (en) | 2008-02-20 | 2009-08-27 | シャープ株式会社 | Method for manufacturing flexible semiconductor substrate |
| CN101962759B (en) * | 2009-07-21 | 2012-07-25 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
| JP5428811B2 (en) * | 2009-12-04 | 2014-02-26 | 凸版印刷株式会社 | Substrate drying method, substrate drying apparatus, substrate manufacturing method, and flat panel display |
| JP5622701B2 (en) * | 2011-10-13 | 2014-11-12 | 東京エレクトロン株式会社 | Vacuum dryer |
-
2016
- 2016-08-30 JP JP2016167793A patent/JP6757629B2/en active Active
-
2017
- 2017-07-14 TW TW110100792A patent/TWI762146B/en active
- 2017-07-14 TW TW106123574A patent/TWI729167B/en active
- 2017-07-14 CN CN201710573155.8A patent/CN107785240B/en active Active
- 2017-07-28 KR KR1020170096211A patent/KR102336748B1/en active Active
-
2021
- 2021-08-03 KR KR1020210102169A patent/KR20210100054A/en not_active Ceased
-
2022
- 2022-07-22 KR KR1020220091268A patent/KR20220109367A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030081945A1 (en) * | 2001-10-29 | 2003-05-01 | Dainippon Screen Mfg. Co., Ltd. | Heat treating apparatus and method |
| JP2005011852A (en) * | 2003-06-16 | 2005-01-13 | Tokyo Electron Ltd | Device and method for heat treatment |
| JP2005019479A (en) * | 2003-06-23 | 2005-01-20 | Tokyo Electron Ltd | Heating means, placing base, and heat treatment equipment |
| CN102810498A (en) * | 2011-06-02 | 2012-12-05 | 东京应化工业株式会社 | Heating device, coating device and heating method |
| CN104779181A (en) * | 2014-01-15 | 2015-07-15 | 株式会社东芝 | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
| JP2015141965A (en) * | 2014-01-28 | 2015-08-03 | 東京応化工業株式会社 | Recovery device, and substrate processing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383944A (en) * | 2018-12-29 | 2020-07-07 | 东京应化工业株式会社 | Substrate heating apparatus, substrate processing system, and substrate heating method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180025177A (en) | 2018-03-08 |
| JP2018037191A (en) | 2018-03-08 |
| TW201807756A (en) | 2018-03-01 |
| TWI729167B (en) | 2021-06-01 |
| TW202129767A (en) | 2021-08-01 |
| KR20210100054A (en) | 2021-08-13 |
| KR102336748B1 (en) | 2021-12-07 |
| JP6757629B2 (en) | 2020-09-23 |
| CN107785240B (en) | 2023-06-20 |
| KR20220109367A (en) | 2022-08-04 |
| TWI762146B (en) | 2022-04-21 |
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