CN107768326B - A silicon carbide power device packaging structure - Google Patents
A silicon carbide power device packaging structure Download PDFInfo
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- CN107768326B CN107768326B CN201710947525.XA CN201710947525A CN107768326B CN 107768326 B CN107768326 B CN 107768326B CN 201710947525 A CN201710947525 A CN 201710947525A CN 107768326 B CN107768326 B CN 107768326B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 53
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000017525 heat dissipation Effects 0.000 claims abstract description 26
- 229910000679 solder Inorganic materials 0.000 claims abstract description 23
- 239000004033 plastic Substances 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical group [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明提供一种碳化硅器件封装结构，包括：芯片，用于实现器件的主要功能；基板，用于连接到芯片并提供散热；塑封体，用于提供芯片和基板的外部塑封；其中基板表面的中间部位设置有凸起的键合部，芯片表面设置有凹进的键合配位部，当基板和芯片通过焊料键合时，键合部与键合配位部嵌套连接。本发明能够使得功率器件获得更低的结温，提高工作的可靠性。
The invention provides a silicon carbide device packaging structure, including: a chip, used to realize the main functions of the device; a substrate, used to connect to the chip and provide heat dissipation; a plastic package, used to provide external plastic packaging of the chip and the substrate; wherein the surface of the substrate The middle part of the chip is provided with a raised bonding part, and the surface of the chip is provided with a recessed bonding coordination part. When the substrate and the chip are bonded by solder, the bonding part and the bonding coordination part are nested and connected. The invention can make the power device obtain lower junction temperature and improve the working reliability.
Description
技术领域technical field
本发明涉及半导体器件技术领域，尤其涉及一种碳化硅功率器件封装结构。The invention relates to the technical field of semiconductor devices, in particular to a silicon carbide power device packaging structure.
背景技术Background technique
相对于以硅为代表的第一代半导体和以砷化镓为代表的第二代半导体，第三代半导体材料碳化硅(SiC)具有比硅更大的禁带宽度和更高的临界击穿场强，相比同等条件下的硅功率器件，SiC的耐压程度约为硅材料的100倍，特别是近年来碳化硅器件厂商陆续推出的肖特基二极管(SBD/JBS)结构产品，耐压范围已经达到600V-1700V。同时，碳化硅具有较高的热导率和较低的本征载流子浓度，能够承受约600℃的结温，使得碳化硅器件的工作温度极限大大提高。另外，碳化硅器件的电子饱和速率较高，正向导通电阻大大减小，功率损耗大幅度地降低，适合大电流大功率运用。所以，碳化硅被认为是新一代高效能电力电子器件重要的发展方向，在新能源汽车、轨道交通、机车牵引、智能电网等领域具有广阔的应用前景。Compared with the first-generation semiconductor represented by silicon and the second-generation semiconductor represented by gallium arsenide, the third-generation semiconductor material silicon carbide (SiC) has a larger band gap and higher critical breakdown than silicon Compared with silicon power devices under the same conditions, the withstand voltage of SiC is about 100 times that of silicon materials, especially the Schottky diode (SBD/JBS) structure products launched by silicon carbide device manufacturers in recent years. The voltage range has reached 600V-1700V. At the same time, silicon carbide has high thermal conductivity and low intrinsic carrier concentration, and can withstand a junction temperature of about 600°C, which greatly increases the operating temperature limit of silicon carbide devices. In addition, the electron saturation rate of silicon carbide devices is high, the forward conduction resistance is greatly reduced, and the power loss is greatly reduced, which is suitable for high-current and high-power applications. Therefore, silicon carbide is considered to be an important development direction of a new generation of high-efficiency power electronic devices, and has broad application prospects in new energy vehicles, rail transit, locomotive traction, smart grids and other fields.
近些年随着材料、工艺、结构的逐渐成熟，使得碳化硅器件日益小型化、高功率化，散热性在碳化硅器件可靠性设计中的重要程度愈加突显。电子器件的失效往往与其工作温度密切相关，据统计，大约占比55％的电子产品失效是由散热不良引起的温度过高或者过热的相关问题导致的。除此之外，散热不良引起的高温对电子元器件的电学特性也会有一定的影响，例如，温度的改变会引起晶体管和集成电路的电流增益变化，进而带来寄生电容、电阻等的改变，影响电信号传输特性等。因此，工业生产中需要降低碳化硅功率器件的工作温度，保证碳化硅功率器件封装良好的散热性能。In recent years, with the gradual maturity of materials, processes, and structures, silicon carbide devices have become increasingly miniaturized and high-power, and the importance of heat dissipation in the reliability design of silicon carbide devices has become increasingly prominent. The failure of electronic devices is often closely related to their operating temperature. According to statistics, about 55% of electronic product failures are caused by excessive temperature or overheating related problems caused by poor heat dissipation. In addition, the high temperature caused by poor heat dissipation will also have a certain impact on the electrical characteristics of electronic components. For example, changes in temperature will cause changes in the current gain of transistors and integrated circuits, which in turn will lead to changes in parasitic capacitance, resistance, etc. , affecting the transmission characteristics of electrical signals, etc. Therefore, it is necessary to reduce the operating temperature of silicon carbide power devices in industrial production to ensure good heat dissipation performance of silicon carbide power device packages.
结点是微电子器件中电能集中活动并产生绝大部分热量的区域，也是芯片中的最热的部分，结点的最高允许温度被芯片的性能、可靠性、芯片和封装材料性质等条件所限制。碳化硅功率器件的热设计即通过合理的冷却方法保证碳化硅功率器件的结点温度低于结点的最高允许温度。The junction is the area where the electrical energy concentrates and generates most of the heat in the microelectronic device, and it is also the hottest part of the chip. The maximum allowable temperature of the junction is determined by the performance, reliability, properties of the chip and packaging materials and other conditions of the chip. limit. The thermal design of silicon carbide power devices is to ensure that the junction temperature of silicon carbide power devices is lower than the maximum allowable temperature of the junction through reasonable cooling methods.
目前，微电子封装提供了从芯片至外部表面的传热途径，现有技术中，对于晶体管外形(Transistor Out-Line，TO)封装器件而言，热流路径主要有三种：一、芯片工作时产生的热量通过焊料层传至金属基板，再通过基板外表面将热量散至环境；二、芯片工作时产生的热量直接通过塑封材料传至外界；三、芯片工作时产生的热量通过引线传至金属管脚，通过金属管脚再传至外部环境。由于塑封材料热导率很低，引线传至金属管脚的热量有限，因此，芯片产生的热量主要是通过第一种散热路径将热量散至外部环境，然而，这样的散热量仍然难以满足日益提高的芯片功能的散热需求。At present, microelectronic packaging provides a heat transfer path from the chip to the external surface. In the prior art, for Transistor Out-Line (TO) packaged devices, there are three main heat flow paths: 1. The heat flow path generated when the chip is working The heat from the chip is transmitted to the metal substrate through the solder layer, and then the heat is dissipated to the environment through the outer surface of the substrate; 2. The heat generated by the chip is directly transmitted to the outside world through the plastic packaging material; 3. The heat generated by the chip is transmitted to the metal through the lead wire. The pins are transmitted to the external environment through the metal pins. Due to the low thermal conductivity of the plastic packaging material, the heat transfer from the leads to the metal pins is limited. Therefore, the heat generated by the chip is mainly dissipated to the external environment through the first heat dissipation path. However, such heat dissipation is still difficult to meet the increasing demands. Increased heat dissipation requirements for chip functions.
因此，亟需设计一种碳化硅功率器件的封装结构，解决现有技术的碳化硅功率器件封装散热量不足的技术问题。Therefore, there is an urgent need to design a packaging structure for silicon carbide power devices to solve the technical problem of insufficient heat dissipation in silicon carbide power device packaging in the prior art.
发明内容Contents of the invention
本发明提供的碳化硅功率器件的封装结构，能够针对现有技术的不足，有效提高碳化硅功率器件封装结构的散热效果。The encapsulation structure of the silicon carbide power device provided by the present invention can effectively improve the heat dissipation effect of the encapsulation structure of the silicon carbide power device in view of the deficiencies in the prior art.
本发明提供一种碳化硅器件封装结构，包括：The present invention provides a silicon carbide device packaging structure, including:
芯片，用于实现所述器件的主要功能；A chip for realizing the main functions of the device;
基板，用于连接到所述芯片并提供散热；a substrate for connecting to the chip and providing heat dissipation;
塑封体，用于提供芯片和基板的外部塑封；The plastic package is used to provide the external plastic package of the chip and the substrate;
其中所述基板表面的中间部位设置有凸起的键合部，所述芯片表面设置有凹进的键合配位部，当所述基板和芯片通过焊料键合时，所述键合部与所述键合配位部嵌套连接。Wherein the middle part of the surface of the substrate is provided with a raised bonding part, and the surface of the chip is provided with a concave bonding coordination part, when the substrate and the chip are bonded by solder, the bonding part and The bonding coordination parts are nested connected.
可选地，上述键合部呈圆柱形，所述键合配合部呈圆孔型。Optionally, the above-mentioned bonding portion is in the shape of a cylinder, and the bonding portion is in the shape of a round hole.
可选地，上述键合部与所述基板一体成型。Optionally, the bonding portion is integrally formed with the substrate.
可选地，上述键合部与所述基板的材料均为铜。Optionally, the bonding portion and the substrate are made of copper.
可选地，上述芯片的键合配合部区域表面生长一层绝缘氧化膜。Optionally, an insulating oxide film is grown on the surface of the bonding part region of the above-mentioned chip.
可选地，上述绝缘氧化膜为SiO2膜。Optionally, the above-mentioned insulating oxide film is a SiO 2 film.
可选地，上述芯片的键合配合部和所述基片的键合部之间的空隙通过所述焊料进行填充。Optionally, the gap between the bonding portion of the chip and the bonding portion of the substrate is filled with the solder.
可选地，上述焊料为铅锡焊料。Optionally, the above-mentioned solder is lead-tin solder.
可选地，上述塑封体材料为环氧树脂。Optionally, the material of the plastic package is epoxy resin.
可选地，上述器件封装结构与TO-247封装外观尺寸相同。Optionally, the above-mentioned device package structure is the same as the TO-247 package in appearance size.
本发明提供的碳化硅功率器件封装结构，通过改善现有技术中的封装结构，使得器件的热量聚集于环形区域，并利用导热部件将热量快速散出，从而能够实现碳化硅功率器件能够获得更低的结温，进而提高碳化硅功率器件工作的可靠性。The silicon carbide power device packaging structure provided by the present invention, by improving the packaging structure in the prior art, makes the heat of the device gather in the annular area, and uses the heat conduction component to dissipate the heat quickly, so that the silicon carbide power device can be obtained more Low junction temperature, thereby improving the reliability of silicon carbide power devices.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without creative effort.
图1A为本发明一个实施例的碳化硅功率二极管的封装结构的基板结构主视图；FIG. 1A is a front view of a substrate structure of a package structure of a silicon carbide power diode according to an embodiment of the present invention;
图1B为本发明一个实施例的碳化硅功率二极管的封装结构的基板结构左视图；1B is a left view of the substrate structure of the packaging structure of the silicon carbide power diode according to one embodiment of the present invention;
图2A为本发明一个实施例中碳化硅功率二极管的封装结构的基板和芯片通过焊料键合后的结构主视图；Fig. 2A is a structural front view of the substrate and chip of the package structure of the silicon carbide power diode in one embodiment of the present invention after solder bonding;
图2B为本发明一个实施例中碳化硅功率二极管的封装结构的基板和芯片通过焊料键合后的结构左视图；2B is a left view of the package structure of the silicon carbide power diode in an embodiment of the present invention after the substrate and the chip are bonded by solder;
图3A为本发明一个实施例中碳化硅功率二极管的封装完成后的结构正视图；FIG. 3A is a front view of the structure after the silicon carbide power diode is packaged in one embodiment of the present invention;
图3B为本发明一个实施例中碳化硅功率二极管的封装完成后的结构左视图；Fig. 3B is a left view of the structure after the silicon carbide power diode is packaged in one embodiment of the present invention;
图4A为现有技术中的碳化硅功率器件现有封装结构的热仿真温度分布示意图；FIG. 4A is a schematic diagram of thermal simulation temperature distribution of an existing packaging structure of a silicon carbide power device in the prior art;
图4B为本发明一实施例提供的碳化硅功率器件的高散热封装结构的热仿真温度分布示意图。FIG. 4B is a schematic diagram of a thermal simulation temperature distribution of a high heat dissipation package structure of a silicon carbide power device provided by an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
本发明的一个实施例提供一种碳化硅功率二极管的封装结构，与现有技术相比，本发明实施例提供的碳化硅功率二极管封装结构在基板结构和芯片结构方面有所改进，从而达到提升二极管封装的散热性能的目的。An embodiment of the present invention provides a silicon carbide power diode packaging structure. Compared with the prior art, the silicon carbide power diode packaging structure provided by the embodiment of the present invention has improved substrate structure and chip structure, thereby achieving improved purpose of thermal performance of the diode package.
图1A示出了本发明一个实施例的碳化硅功率二极管的封装结构的基板结构主视图；图1B示出了本发明一个实施例的碳化硅功率二极管的封装结构的基板结构左视图。如图1A和图1B所示，本发明实施例提供的碳化硅功率二极管封装结构中的基板结构大致呈矩形，顶部两角具有斜边。优选的，基板的材料可以选用导热性能良好的金属，例如铜。典型的，矩形基板的高度为16mm，上半部宽14mm，下半部宽12mm，厚度为2mm。FIG. 1A shows a front view of a substrate structure of a silicon carbide power diode package structure according to an embodiment of the present invention; FIG. 1B shows a left view of a substrate structure of a silicon carbide power diode package structure according to an embodiment of the present invention. As shown in FIG. 1A and FIG. 1B , the substrate structure in the silicon carbide power diode packaging structure provided by the embodiment of the present invention is roughly rectangular, and the top two corners have hypotenuses. Preferably, the material of the substrate may be a metal with good thermal conductivity, such as copper. Typically, the height of the rectangular substrate is 16mm, the width of the upper half is 14mm, the width of the lower half is 12mm, and the thickness is 2mm.
在基板上半部的中间部分设置有通孔。通孔为圆形，典型的，通孔的直径为7mm，通孔的圆心距基板上边的长度为4.5mm。在基板下半部的中间部分设置有一个突出基板表面的圆柱体，圆柱体的圆心距基板左右两边的距离相等。典型的，圆柱体的圆心距离基板下半部左右两边的长度为6.5mm，圆柱体的圆心距基板底边的长度为4mm。典型的，圆柱体与基板一体成型，采用导热性能良好的金属制成，例如铜。典型的，圆柱体的直径为2mm，从基板表面突出的高为0.55mm。A through hole is provided in the middle part of the upper half of the substrate. The through hole is circular, typically, the diameter of the through hole is 7 mm, and the distance between the center of the through hole and the upper side of the substrate is 4.5 mm. A cylinder protruding from the surface of the substrate is arranged in the middle part of the lower half of the substrate, and the distance between the center of the cylinder and the left and right sides of the substrate is equal. Typically, the distance between the center of the cylinder and the left and right sides of the lower half of the substrate is 6.5 mm, and the distance between the center of the cylinder and the bottom edge of the substrate is 4 mm. Typically, the cylinder is integrally formed with the substrate and is made of a metal with good thermal conductivity, such as copper. Typically, the cylinder has a diameter of 2 mm and a height of 0.55 mm protruding from the substrate surface.
进一步的，除基板结构之外，本发明一个实施例的碳化硅功率二极管的封装结构还包括引线管脚焊料和芯片，特别的，在芯片的中心位置会设置一个圆形凹进区域，用于和基板上凸起的圆柱体进行嵌套和配合。Further, in addition to the substrate structure, the packaging structure of the silicon carbide power diode according to one embodiment of the present invention also includes lead solder and chips. In particular, a circular recessed area is set at the center of the chip for Nest and mate with raised cylinders on the base plate.
图2A示出了本发明一个实施例中碳化硅功率二极管的封装结构的基板和芯片通过焊料键合后的结构主视图；图2B示出了本发明一个实施例中碳化硅功率二极管的封装结构的基板和芯片通过焊料键合后的结构左视图。如图2A和图2B所示，芯片嵌套在封装结构的基板下半部凸出的圆柱上，芯片与基板通过焊料键合在一起。典型的，本发明一个实施例提供的芯片的横截面尺寸为5.36×5.36mm，芯片的中心处具有凹进的圆孔区域，圆孔区域的直径为2.2mm。Fig. 2A shows the front view of the package structure of the silicon carbide power diode in one embodiment of the present invention after the substrate and the chip are bonded by solder; Fig. 2B shows the package structure of the silicon carbide power diode in one embodiment of the present invention The left view of the structure after the substrate and chip are bonded by solder. As shown in FIG. 2A and FIG. 2B , the chip is nested on the cylinder protruding from the lower half of the substrate of the packaging structure, and the chip and the substrate are bonded together by solder. Typically, the cross-sectional size of the chip provided by an embodiment of the present invention is 5.36×5.36 mm, and the center of the chip has a concave circular hole area, and the diameter of the circular hole area is 2.2 mm.
特别的，由于芯片中心的凹进圆孔的典型直径为2.2mm，比基板上的凸出圆柱体直径略大，因此，在焊料键合后，芯片中心的凹进圆孔和基板上的凸出圆柱之间会存有空隙，该空隙会通过加入焊料来填补。In particular, since the typical diameter of the concave hole in the center of the chip is 2.2 mm, which is slightly larger than the diameter of the convex cylinder on the substrate, after solder bonding, the concave hole in the center of the chip and the convex cylinder on the substrate There will be a gap between the cylinders, which will be filled by adding solder.
优选的，可以在芯片中心的凹进圆孔表面生长一层绝缘薄膜，用于在进行焊料填充时保证芯片侧面与焊料的电学隔离。典型的，可以在芯片中心的凹进圆孔表面生长例如SiO2的氧化物膜。典型的，焊料应选用热导率较高的焊料，例如锡铅焊料，用于有效将热量传递到基板上凸起的铜柱，进而通过基板将热量散出。Preferably, an insulating film can be grown on the surface of the recessed circular hole in the center of the chip to ensure the electrical isolation between the side of the chip and the solder when the solder is filled. Typically, an oxide film such as SiO2 can be grown on the surface of the recessed circular hole in the center of the chip. Typically, the solder should be solder with high thermal conductivity, such as tin-lead solder, which is used to effectively transfer heat to the raised copper pillars on the substrate, and then dissipate the heat through the substrate.
图3A示出了本发明一个实施例中碳化硅功率二极管的封装完成后的结构正视图；图3B示出了本发明一个实施例中碳化硅功率二极管的封装完成后的结构左视图。如图3A和图3B所示，芯片与基板键合之后，通过塑封材料与功率器件管脚的装配完成功率器件最后的封装。典型的，本发明实施例中可以选取环氧树脂作为器件的整体塑封材料。Fig. 3A shows a front view of the packaged silicon carbide power diode in one embodiment of the present invention; Fig. 3B shows a left side view of the packaged silicon carbide power diode in one embodiment of the present invention. As shown in FIG. 3A and FIG. 3B , after the chip is bonded to the substrate, the final packaging of the power device is completed by assembling the plastic packaging material and the pins of the power device. Typically, epoxy resin can be selected as the overall molding material of the device in the embodiment of the present invention.
在本发明实施例提供的功率器件封装之后，器件在外观上与TO-247封装完全相同。即本发明实施例提供的碳化硅功率二极管通过改变碳化硅功率二极管的内部结构提高了器件的散热能力，但在碳化硅功率二极管的实际应用过程中与现有技术中的功率二极管没有外部结构区别。因此，本发明实施例提供的碳化硅功率器件可以不与现有封装结构发生冲突而直接替换现有器件，同时还提高了碳化硅功率器件在高温环境下的工作能力。需要说明的是，本发明提供的高散热封装结构不仅适用于TO-247封装结构，还适用于其他TO封装结构。After the package of the power device provided by the embodiment of the present invention, the appearance of the device is exactly the same as that of the TO-247 package. That is, the silicon carbide power diode provided by the embodiment of the present invention improves the heat dissipation capability of the device by changing the internal structure of the silicon carbide power diode, but there is no external structure difference between the silicon carbide power diode and the power diode in the prior art in the actual application process . Therefore, the silicon carbide power device provided by the embodiment of the present invention can directly replace the existing device without conflicting with the existing packaging structure, and at the same time improves the working capability of the silicon carbide power device in a high temperature environment. It should be noted that the high heat dissipation package structure provided by the present invention is not only applicable to the TO-247 package structure, but also applicable to other TO package structures.
图4A示出了现有技术中的碳化硅功率器件现有封装结构的热仿真温度分布示意图；图4B示出了本发明一实施例提供的碳化硅功率器件的高散热封装结构的热仿真温度分布示意图。在进行仿真对比过程中，为使得现有技术封装结构和本发明一实施例提供的芯片过电流以及单位体积热量产生量相同，优选使得现有技术封装结构和本发明一实施例提供的芯片截面积相同。典型的，取现有技术封装结构中的芯片截面尺寸为5×5mm，本发明一实施例提供的芯片封装结构中芯片截面尺寸为5.36×5.36mm，中心凸起的圆柱的直径为2.2mm，即令现有技术封装结构中的芯片截面积与本发明一实施例提供的芯片截面积相同。另外，由于两个芯片厚度相同所以体积也相同。Figure 4A shows a schematic diagram of the thermal simulation temperature distribution of the existing packaging structure of silicon carbide power devices in the prior art; Figure 4B shows the thermal simulation temperature of the high heat dissipation packaging structure of silicon carbide power devices provided by an embodiment of the present invention Distribution diagram. In the simulation comparison process, in order to make the chip overcurrent and heat generation per unit volume of the prior art packaging structure and an embodiment of the present invention the same, it is preferable to make the prior art packaging structure and the chip section provided by an embodiment of the present invention The area is the same. Typically, the cross-sectional size of the chip in the packaging structure of the prior art is 5×5 mm, the cross-sectional size of the chip in the chip packaging structure provided by an embodiment of the present invention is 5.36×5.36 mm, and the diameter of the central raised cylinder is 2.2 mm, that is, The cross-sectional area of the chip in the package structure of the prior art is the same as the cross-sectional area of the chip provided by an embodiment of the present invention. In addition, since the thickness of the two chips is the same, the volume is also the same.
如图4A和图4B所示，在相同热耗散功率下，现有技术封装结构中的芯片最高温度为27.064℃，而在本发明一实施例提供的高散热封装结构下的芯片最高温度为26.433℃。由于设置器件基板外表面为恒温25℃，所以现有技术封装结构中的芯片的温升为2.064℃，本发明一实施例提供的高散热封装结构的芯片的温升为1.433℃，即本发明一实施例提供的高散热封装结构的芯片的温升在现有技术基础上降低了30.6％。进一步的，如果在实际工作中，现有技术封装结构中的芯片的温升为100℃时，在相同条件下本发明一实施例提供的高散热封装结构的芯片的温升仅为70℃。因此本发明封装结构能够有效降低碳化硅功率二极管工作时芯片的温度。As shown in Figure 4A and Figure 4B, under the same heat dissipation power, the maximum temperature of the chip in the package structure of the prior art is 27.064°C, while the maximum temperature of the chip under the high heat dissipation package structure provided by an embodiment of the present invention is 26.433°C. Since the outer surface of the device substrate is set at a constant temperature of 25°C, the temperature rise of the chip in the prior art package structure is 2.064°C, and the temperature rise of the chip with the high heat dissipation package structure provided by an embodiment of the present invention is 1.433°C, that is, the temperature rise of the chip of the present invention The temperature rise of the chip with the high heat dissipation package structure provided by one embodiment is reduced by 30.6% based on the prior art. Furthermore, if in actual work, the temperature rise of the chip in the package structure of the prior art is 100°C, the temperature rise of the chip with the high heat dissipation package structure provided by an embodiment of the present invention is only 70°C under the same conditions. Therefore, the packaging structure of the present invention can effectively reduce the temperature of the chip when the silicon carbide power diode is working.
特别的，由图4A和图4B可见，在现有技术封装结构中的芯片的最热结点位于芯片的几何中心处，而本发明一实施例提供的高散热封装结构的芯片的最热结点均匀分布在环形区域上。In particular, it can be seen from FIG. 4A and FIG. 4B that the hottest junction of the chip in the prior art packaging structure is located at the geometric center of the chip, while the hottest junction of the chip in the high heat dissipation packaging structure provided by an embodiment of the present invention is The points are evenly distributed over the annular area.
与现有的技术相比，本发明实施例提供的高散热封装结构的环形散热区域缓解了由于热量的高度集中而使芯片温度升高的问题，并且嵌套在芯片中心凹进区域的与散热基板相连的凸起铜柱结构使得流向芯片中心区域的热量通过铜柱快速有效地散出到基板，增加了芯片的热流路径，因此本发明实施例提供的高散热封装结构的器件能够适应更恶劣的工作环境。Compared with the existing technology, the annular heat dissipation area of the high heat dissipation package structure provided by the embodiment of the present invention alleviates the problem of the temperature rise of the chip due to the high concentration of heat, and the heat dissipation is nested in the concave area of the center of the chip. The raised copper pillar structure connected to the substrate enables the heat flowing to the central area of the chip to be quickly and effectively dissipated to the substrate through the copper pillar, which increases the heat flow path of the chip, so the device with a high heat dissipation package structure provided by the embodiment of the present invention can adapt to harsher conditions. working environment.
本发明实施例提供的碳化硅功率器件封装结构，通过改善现有技术中的封装结构，使得器件的热量聚集于环形区域，并利用导热部件将热量快速散出，从而能够实现碳化硅功率器件能够获得更低的结温，进而提高碳化硅功率器件工作的可靠性。The silicon carbide power device packaging structure provided by the embodiment of the present invention, by improving the packaging structure in the prior art, the heat of the device is gathered in the annular area, and the heat is quickly dissipated by the heat conducting component, so that the silicon carbide power device can be realized Obtain a lower junction temperature, thereby improving the reliability of silicon carbide power devices.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.
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