CN107758607A - A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio - Google Patents
A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio Download PDFInfo
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- CN107758607A CN107758607A CN201710910028.2A CN201710910028A CN107758607A CN 107758607 A CN107758607 A CN 107758607A CN 201710910028 A CN201710910028 A CN 201710910028A CN 107758607 A CN107758607 A CN 107758607A
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- 238000002360 preparation method Methods 0.000 title claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims abstract description 8
- 238000004528 spin coating Methods 0.000 claims abstract description 8
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000010894 electron beam technology Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 239000002904 solvent Substances 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 8
- 238000009499 grossing Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 238000002164 ion-beam lithography Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004113 cell culture Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- -1 isopropyls Amine Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
本发明揭示了一种高深宽比高保形纳米级正型结构的制备方法，本发明用旋涂的方法在提供的衬底上旋涂一层正性光刻胶聚甲基丙烯酸甲酯，并置于热板上前烘；利用电子束曝光技术对样品进行曝光显影得到预期的聚甲基丙烯酸甲酯微纳结构；利用磁控溅射镀膜沉积技术在样品上共形沉积一层功能材料薄膜；利用旋涂的方式在溅射处理后的样品上旋涂一层平坦化层氢倍半硅氧烷；然后把样品置于热板上低温烘烤以去除平坦化材料中的溶剂；再对样品用斜角离子束抛光设备以角度小于90°的夹角进行抛光处理直到除去聚甲基丙烯酸甲酯上表面所有金属为止；最后用氧等离子对样品进行处理以达到去除聚甲基丙烯酸甲酯并进行无应力释放最终的高深宽比高保形纳米级正型结构。
The invention discloses a method for preparing a high aspect ratio and high conformal nanoscale positive structure. The invention uses a spin coating method to spin coat a layer of positive photoresist polymethyl methacrylate on the provided substrate, and Pre-baking on a hot plate; using electron beam exposure technology to expose and develop the sample to obtain the expected micro-nano structure of polymethyl methacrylate; using magnetron sputtering coating deposition technology to conformally deposit a layer of functional material film on the sample ; spin-coat a layer of planarization layer hydrogen silsesquioxane on the sample after sputtering treatment by spin coating; then place the sample on a hot plate and bake at low temperature to remove the solvent in the planarization material; The sample is polished with an angled ion beam polishing device at an angle less than 90° until all metals on the upper surface of the polymethyl methacrylate are removed; finally, the sample is treated with oxygen plasma to remove the polymethyl methacrylate And perform stress-free release of the final high aspect ratio and high conformal nanoscale positive structure.
Description
Technical field：
The present invention relates to a kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio, available for optical field,
Biological field, field of acoustics.
Background technology：
The high conformal nanoscale eurymeric structure of high-aspect-ratio, has broad application prospects in optical field and biological field,
Especially, traditional optical imagery and micro-nano technology technology are limited by diffraction limit, based on surface phasmon
The high conformal artificial micro-structure of (surface plamon polaritions, SPPs) can be realized super by the modulation to light
Resolution imaging；Cell culture of biological field etc. high conformal also has certain requirement for the high-aspect-ratio of micro-nano structure.
The preparation of traditional micro-nano structure is that exposure imaging, vaporization function material, wet method remove photoresist on a photoresist,
Or directly perform etching after development, so as to realize in micro-nano structure pattern transfer on photoresist to functional material, however,
Traditional processing method can not meet conformal filling due to evaporating, and due to the effect of capillary force, nothing during wet etching
Method processes high conformal, high-aspect-ratio micro-nano structure.
The content of the invention：
The invention aims to overcome evaporation in the prior art can not meet conformal filling, wet etching capillary force etc.
Cause it is difficult to ensure that the shortcomings that prepared by high-aspect-ratio high conformal structure.The technical solution adopted by the present invention is first in polymethyl
Make expected nanoscale eurymeric structure using electron beam exposure development on sour methyl esters, then through magnetron sputtering carry out conformal filling,
It is then spin coated onto one layer of SOG material or hydrogen silsesquioxane carries out planarization process, polished again through angled ion beam until poly- methyl
The method that the material of methyl acrylate upper surface all removes, remaining polymethyl methacrylate is removed through dry etching.
To reach above-mentioned technique effect, this patent comprises the following steps that：
A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio, comprises the following steps：
Step 1: providing substrate, and cleaned；
Step 2: the spin coating photoresist on substrate, and carry out front baking；
Step 3: photoresist is exposed；
Step 4: the sample after exposure is developed；
Step 5: using coating process in photoresist superficial deposit functional membranes；
Step 6: in one layer of smoothing material of spin coating on the substrate of deposited functional membranes；
Step 7: baking, removes the solvent in smoothing material, further planarization；
Step 8: using glossing, planarization layer and the functional membranes of protrusion are removed, until being polished to lower floor
Untill photoresist；
Step 9: remove remaining photoresist using selective removal technology or heating；It is conformal so as to obtain high-aspect-ratio height
Nanoscale eurymeric structure graph.
Further to improve, the photoresist in the step 2 is polymethyl methacrylate, and ZEP520 or eurymeric are purple
Outer photoresist.
It is further to improve, in the step 3, development, the light are exposed to photoresist top layer using photoetching technique
Lithography be electron beam lithography, Ion Beam Lithography Technology, ultraviolet or extreme ultraviolet technology, X-ray exposure technology, swash
Light interference lithography technology or nano impression；The time of development is more than 30 seconds.
Further to improve, the coating process in the step 5 is ald, magnetron sputtering, plating, ion plating
Or chemical vapor deposition；The functional membranes of deposition are solid-state optical medium, mechanical wave medium, magnetizing mediums or dielectric；It is described
Dielectric includes metal and semi-conducting material.
It is further to improve, the planarization layer in the step 6 is polymethyl methacrylate, spin on glass or
Hydrogen silsesquioxane.
Temperature that is further to improve, being toasted in the step 7<100 DEG C, the time of baking is 5~10 minutes.
Further to improve, polishing method is in the step 8：Chemically mechanical polishing, MRF or ion beam
Polishing；Selective removal technology includes in the step 9：Dry etching, wet etching.
Further to improve, the functional material that whole planarization layer and photoresist upper stratas are polished in the step 8 is thin
Film.
Further to improve, the time of selective removal is to remove remaining photoresist or directly thermal decomposition in the step 9
Remaining photoresist is removed to be defined.
The nanoscale eurymeric knot that a kind of any of the above-described high conformal autologous preparation method of nanoscale of high-aspect-ratio makes
Structure is used to make plane super lenses, nano gap SERS substrate, high density transducer, high-aspect-ratio X ray
Zone plate, master grating or special high-density grating, or for super transmission or high-aspect-ratio electrode pair, sensor electrode.
The beneficial effects of the present invention are advanced width can not be met by solving in existing optics and biological field minute manufacturing
Than high conformal structure preparation the problem of, using the method can be prepared on substrate with high-aspect-ratio height is conformal, dimensional accuracy,
The nanoscale eurymeric structure of the features such as low surface roughness, small structural stress, it is optical field and the minimum yardstick of biological field, pole
High accuracy processing provides a kind of effective method.
Brief description of the drawings
In order that the object, technical solutions and advantages of the present invention are clearer, the present invention is made below in conjunction with accompanying drawing into
The detailed description of one step, wherein：
Fig. 1 is that the structural representation after polymethyl methacrylate is got rid of on substrate
Fig. 2 is that the structural representation after development is exposed to polymethyl methacrylate
Fig. 3 is that the schematic diagram after conformal deposited is carried out using magnetron sputtering
Fig. 4 is to deposit the schematic diagram after smoothing material hydrogen silsesquioxane
Fig. 5 is the schematic diagram after the polishing of angled ion beam
Fig. 6 is the design sketch after polymethyl methacrylate removes
Simple symbol explanation in figure：
The photoresist of 1 chip (i.e. substrate) 2:Polymethyl methacrylate
The functional material metal Al of pattern 4 after the exposed development of 3 polymethyl methacrylates
5 smoothing materials：Functional material metal Al after the polishing of hydrogen silsesquioxane 6
Embodiment
The specific embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
(1) substrate is provided：Select monocrystalline substrate and be first cleaned by ultrasonic 300s with acetone, then with isopropanol ultrasound 300s,
And dried up with nitrogen.
Design sketch as shown in Figure 1, elder generation drip 3% polymethyl methacrylate on substrate and rotate 5s with 1000r/s,
Then 4000r/s rotates 60s again, is placed in hot plate or baking oven with 180 DEG C of baking 300s；
Design sketch as shown in Figure 2, utilize electron beam exposure apparatus Raith 150two, using high pressure as 30KV, 30 μm of diaphragms
Fixed point exposure is carried out to polymethyl methacrylate, and the slice, thin piece after exposure at MIBK (methyl iso-butyl ketone (MIBK)):IPA (isopropyls
Amine)=1：Develop 60s in 3 developer solution, is then fixed 60s (at least 30s) with IPA, and dried up with nitrogen.
Be 80V in bias as shown in figure 3, using magnetron sputtering, electric current 0.8A, vacuum is sputters under conditions of 1 pa
Plated film 280 seconds.
Design sketch as shown in Figure 4, first the upper a few drop hydrogen silsesquioxane solution of drop on the sample after figure (3) processing, are used in combination
Spin coater is with 2000r/s spin coatings 60s.
Sample by spin coating hydrogen silsesquioxane film is toasted on hot plate with 50 DEG C (being not higher than 100 DEG C)
300s (5-10 minutes).
As shown in figure (5), using angled ion beam device, using high pressure as 500ev, line 100mA, angle is 10 ° to sample
Product are processed by shot blasting, untill the metal on polymethyl methacrylate upper strata all removes.
As shown in figure (6), oxygen plasma treatment 2-5min is utilized through scheming (5) treated sample, until gathering for remnants
Untill methyl methacrylate all removes, so as to obtain the high conformal metallic figure of high-aspect-ratio.
Claims (10)
- A kind of 1. high conformal autologous preparation method of nanoscale of high-aspect-ratio, it is characterised in that：Comprise the following steps：Step 1: providing substrate, and cleaned；Step 2: the spin coating photoresist on substrate, and carry out front baking；Step 3: photoresist is exposed；Step 4: the sample after exposure is developed；Step 5: using coating process in photoresist superficial deposit functional membranes；Step 6: in one layer of smoothing material of spin coating on the substrate of deposited functional membranes；Step 7: baking, removes the solvent in smoothing material；Step 8: using glossing, planarization layer and the functional membranes of protrusion are removed, until being polished to lower floor's photoetching Untill glue；Step 9: remove remaining photoresist using selective removal technology or heating；So as to obtain the high conformal nanometer of high-aspect-ratio Level eurymeric structure graph.
- 2. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Photoresist in the step 2 is polymethyl methacrylate, ZEP520 or eurymeric ultraviolet photoresist.
- 3. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：In the step 3, development is exposed to photoresist top layer using photoetching technique, the photoetching technique is electron beam exposure Technology, Ion Beam Lithography Technology, ultraviolet or extreme ultraviolet technology, X-ray exposure technology, laser interference photolithography technology are received Rice impressing；The time of development is more than 30 seconds.
- 4. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Coating process in the step 5 is ald, magnetron sputtering, plating, ion plating or chemical vapor deposition；Deposition Functional membranes be solid-state optical medium, mechanical wave medium, magnetizing mediums or dielectric；The dielectric includes metal and partly led Body material.
- 5. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Planarization layer in the step 6 is polymethyl methacrylate, spin on glass or hydrogen silsesquioxane.
- 6. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：The temperature toasted in the step 7<100 DEG C, the time of baking is 5~10 minutes.
- 7. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：Polishing method is in the step 8：Ion beam polishing, chemically mechanical polishing or MRF；Selected in the step 9 Selecting property removal technology includes：Dry etching, wet etching.
- 8. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：The functional membranes on whole planarization layer and photoresist upper stratas are polished in the step 8.
- 9. the high conformal autologous preparation method of nanoscale of a kind of high-aspect-ratio according to claim 1, its feature exist In：In the step 9 time of selective removal using remove remaining photoresist or directly thermal decomposition remove remaining photoresist as It is accurate.
- What 10. the high conformal autologous preparation method of nanoscale of any high-aspect-ratio of claim 1 to 10 made receives Meter level eurymeric structure is used to make plane super lenses, nano gap SERS substrate, high density transducer, profundity Width is than X ray zone plate, master grating or special high-density grating, or for super transmission or high-aspect-ratio electrode pair, sensor Electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710910028.2A CN107758607A (en) | 2017-09-29 | 2017-09-29 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710910028.2A CN107758607A (en) | 2017-09-29 | 2017-09-29 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
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Family
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| CN201710910028.2A Pending CN107758607A (en) | 2017-09-29 | 2017-09-29 | A kind of high conformal autologous preparation method of nanoscale of high-aspect-ratio |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164518A (en) * | 2018-10-11 | 2019-01-08 | 业成科技（成都）有限公司 | Super lens, preparation method and the optical module using it |
| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method for preparing large-area releasable micro-nano structures |
| CN111115563A (en) * | 2019-12-23 | 2020-05-08 | 湖南大学 | A kind of method of fully dry functional material stripping |
| WO2021083080A1 (en) * | 2019-10-30 | 2021-05-06 | 南京大学 | Preparation method for silicon nanometer needle array having extra-high depth to width ratio |
| CN113517363A (en) * | 2021-05-19 | 2021-10-19 | 西安电子科技大学 | Infrared photodetector and method of making the same |
| CN113793714A (en) * | 2021-07-28 | 2021-12-14 | 湖南大学 | Preparation method for large-area soft X-ray zone plate |
| CN114235037A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | High aspect ratio nanogap multiphysics coupling detection platform and detection method |
| CN114236964A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | Preparation method of broadband variable focus metalens |
| CN115968251A (en) * | 2021-10-08 | 2023-04-14 | 腾讯科技（深圳）有限公司 | Quantum bit component, preparation method of qubit component, chip and device |
| CN116511719A (en) * | 2023-05-25 | 2023-08-01 | 中山大学 | Method and system for preparing micro-nano structure by laser-electron beam and micro-nano structure |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164518A (en) * | 2018-10-11 | 2019-01-08 | 业成科技（成都）有限公司 | Super lens, preparation method and the optical module using it |
| CN109666917A (en) * | 2018-12-20 | 2019-04-23 | 长沙新材料产业研究院有限公司 | A kind of diamond surface structure and preparation method thereof |
| CN109879241A (en) * | 2019-02-25 | 2019-06-14 | 湖南大学 | A method for preparing large-area releasable micro-nano structures |
| WO2021083080A1 (en) * | 2019-10-30 | 2021-05-06 | 南京大学 | Preparation method for silicon nanometer needle array having extra-high depth to width ratio |
| CN111115563A (en) * | 2019-12-23 | 2020-05-08 | 湖南大学 | A kind of method of fully dry functional material stripping |
| CN113517363B (en) * | 2021-05-19 | 2022-11-11 | 西安电子科技大学 | Infrared photoelectric detector and manufacturing method thereof |
| CN113517363A (en) * | 2021-05-19 | 2021-10-19 | 西安电子科技大学 | Infrared photodetector and method of making the same |
| CN113793714A (en) * | 2021-07-28 | 2021-12-14 | 湖南大学 | Preparation method for large-area soft X-ray zone plate |
| CN115968251A (en) * | 2021-10-08 | 2023-04-14 | 腾讯科技（深圳）有限公司 | Quantum bit component, preparation method of qubit component, chip and device |
| CN114235037A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | High aspect ratio nanogap multiphysics coupling detection platform and detection method |
| CN114236964A (en) * | 2021-12-06 | 2022-03-25 | 中国科学院物理研究所 | Preparation method of broadband variable focus metalens |
| CN116511719A (en) * | 2023-05-25 | 2023-08-01 | 中山大学 | Method and system for preparing micro-nano structure by laser-electron beam and micro-nano structure |
| CN116511719B (en) * | 2023-05-25 | 2023-11-28 | 中山大学 | A method, system and micro-nano structure for preparing micro-nano structures using laser-electron beam |
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