CN107731781B - Semiconductor device with a plurality of semiconductor chips - Google Patents

Abstract

A semiconductor device, comprising: a first coil substantially located in a first plane; a second coil substantially located on the first plane; a connecting part connecting the first coil and the second coil; a third coil substantially located in a second plane, the second plane being different from the first plane; and a fourth coil substantially located in the second plane; the third coil and the first coil are connected through a penetrating structure, the fourth coil and the second coil are connected through a penetrating structure, and the third coil and the fourth coil are not directly connected.

Description

semiconductor element

technical field

The present invention relates to semiconductor components, in particular to semiconductor components that can be used as integrated inductors and integrated transformers.

Background technique

Inductors and transformers are important components used in RF integrated circuits to realize functions such as single-ended to differential signal conversion, signal coupling, and impedance matching. With the development of integrated circuits to System on Chip (SoC), integrated circuits Integrated inductors and integrated transformers have gradually replaced traditional discrete components and are widely used in radio frequency integrated circuits. However, the inductors and transformers in integrated circuits often occupy a large amount of chip area. Therefore, how to reduce the area of inductors and transformers in integrated circuits while maintaining the characteristics of components, such as inductance value, quality factor (quality factor) , Q) and coupling coefficient (couplingcoefficient, K), etc., become an important topic.

FIG. 1 is a structural diagram of a conventional 8-shaped integrated inductor. The 8-shaped integrated inductor 100 includes spiral coils 110 and 120 . The helical coils 110 , 120 include metal wire segments 112 , 122 and metal wire segments 114 , 124 . The metal line segments 112 , 122 are connected to the metal line segments 114 , 124 through a through structure located at a through position, and the through structure may be, for example, a via structure or a via array. In use, a signal is input from one terminal 111 or 121 of the 8-shaped integrated inductor 100 and output from the other terminal 121 or 111 . The disadvantage of the 8-shaped integrated inductor 100 is that the symmetry of the helical coils 110 and 120 itself is not good, so that the quality factor and inductance value of the 8-shaped integrated inductor 100 cannot be improved; moreover, the 8-shaped integrated inductor The distance between the two terminals 111 and 121 of the inductor 100 is far away (more obvious when the number of turns of the helical coil is large), which is not conducive to coupling with the differential element in the integrated circuit.

Contents of the invention

In view of the deficiencies of the prior art, an object of the present invention is to provide a semiconductor element to improve the element characteristics of the integrated inductor and the integrated transformer.

The invention discloses a semiconductor element, comprising: a first helical coil having a first end point and a second end point; a second helical coil substantially located on the same metal layer as the first helical coil; A connecting part, connecting the first helical coil and the second helical coil; a guiding line segment, connecting the first end point and the second end point with one end; wherein, the guiding line segment part and the connecting part At least one of them partially overlaps with the range surrounded by the second helical coil.

The present invention further discloses a semiconductor element, comprising: a first coil substantially located on a first plane; a second coil substantially located on the first plane; a connecting portion connecting the first coil and the second coil. a coil; a third coil substantially located in a second plane different from the first plane; and a fourth coil substantially located in the second plane; wherein the third coil and the first The coils are connected through the through structure, the fourth coil is connected with the second coil through the through structure, and the third coil and the fourth coil are not directly connected.

Compared with the conventional technology, the semiconductor element of the present invention has high symmetry, which is beneficial to improve the characteristics of the element.

The characteristics, implementation and effects of the present invention are described in detail as follows with reference to the drawings.

Description of drawings

Figure 1 is a structural diagram of a conventional 8-shaped integrated inductor;

2A is a structural diagram of a semiconductor device according to an embodiment of the present invention;

FIG. 2B is a detailed structure diagram of the semiconductor device of FIG. 2A;

3 is a structural diagram of a semiconductor element according to another embodiment of the present invention;

4 is a structural diagram of a semiconductor element according to another embodiment of the present invention;

5 is a structural diagram of a semiconductor element according to another embodiment of the present invention;

6 is a structural diagram of a semiconductor element according to another embodiment of the present invention;

FIG. 7A is a structural diagram of a semiconductor device 700 according to another embodiment of the present invention; and

7B to 7C are detailed structural diagrams of the semiconductor device 700 shown in FIG. 7A .

Detailed ways

The technical terms in the following explanations refer to the customary terms in this technical field. If some terms are explained or defined in this specification, the explanations of these terms shall be based on the descriptions or definitions in this specification.

FIG. 2A is a structural diagram of an embodiment of the semiconductor device of the present invention. The semiconductor device 200 includes spiral coils 210 and 220 . The helical coils 210 and 220 are connected by a connecting portion 230 . The metal line segments 250 a and 250 b are lead line segments of the semiconductor device 200 , and both constitute the lead line segment portion of the semiconductor device 200 . One end of the metal wire segment 250 a is connected to one end point 212 a of the helical coil 210 ; one end of the metal wire segment 250 b is connected to the other end point 212 b of the helical coil 210 . The central tap 240 of the semiconductor device 200 is connected to the helical coil 220 and is fabricated on another metal layer (different from the metal layer shown in light gray and the metal layer shown in oblique lines). The center tap 240 can be regarded as another leading segment of the semiconductor device 200 . Metal line segments located in different metal layers are connected through a through structure. The through structure can be, for example, a via structure or a via array.

FIG. 2B shows the independent structures of the helical coil 210 , the helical coil 220 and the connection part 230 to illustrate the connection relationship among them more clearly. The end points 212a and 212b of the helical coil 210 are respectively connected to the wire segments 250a and 250b. The spiral coil 210 includes metal wire segments 211a-211d; the metal wire segment 211b is fabricated on the upper metal layer (indicated by oblique lines), and the rest of the metal wire segments are fabricated on the lower metal layer (indicated in light gray). The helical coil 210 is a helical structure with two turns, and the inner coil is located in the range surrounded by the outer coil; the inner coil includes the lower half of the metal wire segment 211a and the metal wire segment 211d; the outer coil includes the upper half of the metal wire segment 211d and the metal wire segment 211d. Line segment 211c. Because the metal line segment 211b only occupies a small portion of the helical coil 210, the helical coil 210 is substantially located on the same metal layer, that is, substantially on the same plane. Similarly, the helical coil 220 includes metal wire segments 221 a - 221 d ; the metal wire segment 221 c is fabricated on the upper metal layer, and the rest of the metal wire segments are fabricated on the lower metal layer. The helical coil 220 is a helical structure with two turns, and the inner coil is located in the range surrounded by the outer coil; the inner coil includes the lower half of the metal wire segment 221b and the metal wire segment 221a; the outer coil includes the upper half of the metal wire segment 221a and the metal wire segment 221a. Line segment 221d. Similarly, the helical coils 220 are substantially located on the same metal layer, that is, substantially on the same plane. The helical coil 220 is connected to the central tap 240 via a connecting region 222c. The connection area 222c is located at the inner circle of the helical coil 220 and is the connection between the metal wire segment 221a and the metal wire segment 221b.

The connecting portion 230 includes a connecting line segment 231a and a connecting line segment 231b. Two ends of the connecting line segment 231a are respectively connected to the end point 212c of the helical coil 210 and the end point 222b of the helical coil 220;

Although the leading line segment of the semiconductor element 200 is connected to the helical coil 210 , it partially overlaps the area surrounded by the helical coil 220 , and does not partially overlap the area surrounded by the inner coil connected to the helical coil 210 . The center tap 240 is connected to the inner coil of the helical coil 220 . In this embodiment, the central tap 240 faces the right-hand direction in the figure, and partially overlaps the area surrounded by the helical coil 220; in different embodiments, the central tap 240 may face the left-hand direction in the figure, And it partially overlaps with the range surrounded by the helical coil 210 .

FIG. 3 is a structural diagram of a semiconductor device according to another embodiment of the present invention. The semiconductor device 300 includes spiral coils 310 and 320 . The helical coils 310 and 320 are connected by a connecting portion 330 . Similar to the connecting part 230, the connecting part 330 is composed of two connecting line segments, which will not be repeated here. The metal segments 350 a , 350 b , 350 c , and 350 d are lead segments of the semiconductor element 300 , and constitute the lead segment portion of the semiconductor element 300 . The metal wire segments 350a and 350c are connected to the helical coil 310 through the end point 312a; the metal wire segments 350b and 350d are connected to the helical coil 310 through the end point 312b. The central tap (not shown) of the semiconductor device 300 is connected to the helical coil 320 through the connection area 322 , and can be regarded as another leading segment of the semiconductor device 300 . The central tap of the semiconductor element 300 may face the right-hand direction in the figure and partially overlap the range surrounded by the helical coil 320; in different embodiments, the central tap may face the left-hand direction in the figure and overlap with the helical coil 320; The ranges surrounded by the shape coils 310 partially overlap.

The guiding line segment of the semiconductor device 300 extends toward the left-hand and right-hand directions in the figure, that is to say, the guiding line segment partially overlaps the area surrounded by the helical coil 310 and the helical coil 320 . The leading line segment forms an input port or an output port on both sides of the semiconductor device 300, which increases the flexibility of connecting the semiconductor device 300 to peripheral devices.

FIG. 4 is a structural diagram of a semiconductor device according to another embodiment of the present invention. The semiconductor device 400 includes helical coils 410 and 420 . The connecting line segments 430 a and 430 b constitute the connecting portion of the semiconductor element 400 . The helical coils 410 and 420 are connected by connecting parts; in more detail, the connecting line segment 430a connects the end point 412c of the helical coil 410 and the end point 422a of the helical coil 420, and the connecting line segment 430b connects the end point 412d of the helical coil 410 and the helical coil The end point 422b of the shape coil 420. The metal line segments 450 a and 450 b are lead line segments of the semiconductor device 400 , and they constitute the lead line segment portion of the semiconductor device 400 . One end of the metal wire segment 450 a is connected to one end point 412 a of the helical coil 410 ; one end of the metal wire segment 450 b is connected to the other end point 412 b of the helical coil 410 . The central tap (not shown) of the semiconductor device 400 is connected to the helical coil 420 through the connection region 422c, and can be regarded as another leading segment of the semiconductor device 400 . The central tap of the semiconductor element 400 can face the right-hand direction in the figure, and does not overlap with the range included by the helical coils 410 and 420; in different embodiments, the central tap can face the left-hand direction in the figure, and The areas surrounded by the helical coils 410 and 420 partially overlap.

The connecting portion of the semiconductor element 400 connects the outer turns of the helical coil 410 and the outer turn of the helical coil 420 , and partially overlaps the area surrounded by the helical coil 420 . In the embodiment shown in FIG. 4 , the number of turns of the helical coil 410 is an even number, so the leading line segment of the semiconductor device 400 partially overlaps the area surrounded by the helical coil 410 . In different embodiments, when the number of turns of the helical coil 410 is an odd number (such as 3 turns, 5 turns, 7 turns, etc.), the leading line segment of the semiconductor element 400 is not connected to the inner coil of the helical coil 410. Ranges overlap.

FIG. 5 is a structural diagram of a semiconductor device according to another embodiment of the present invention. The semiconductor device 500 includes helical coils 510 and 520 . The connecting line segments 530 a and 530 b constitute the connecting portion of the semiconductor element 500 . The helical coils 510 and 520 are connected by connecting parts; in more detail, the connecting line segment 530a connects the end point 512c of the helical coil 510 and the end point 522a of the helical coil 520, and the connecting line segment 530b connects the end point 512d of the helical coil 510 and the helical coil The end point 522b of the shape coil 520. The metal line segments 550 a and 550 b are lead line segments of the semiconductor device 500 , and they constitute the lead line segment portion of the semiconductor device 500 . One end of the metal wire segment 550 a is connected to one end point 512 a of the helical coil 510 ; one end of the metal wire segment 550 b is connected to the other end point 512 b of the helical coil 510 . The central tap (not shown) of the semiconductor device 500 is connected to the helical coil 510 through the connection region 512e, and can be regarded as another leading segment of the semiconductor device 500 . The central tap of the semiconductor element 500 can face the left-hand direction in the figure, and does not overlap with the range surrounded by the helical coils 510 and 520; in different embodiments, the central tap can face the right-hand direction in the figure, and The areas surrounded by the helical coils 510 and 520 partially overlap.

The helical coils 510 and 520 both have a three-turn helical structure. The end points 512 a and 512 b are located at the innermost coil of the helical coil 510 , and the end points 512 c and 512 d are located at the middle coil of the helical coil 510 . The end points 522 a and 522 b are located at the innermost turns of the helical coil 520 . The connecting portion of the semiconductor device 500 connects the middle coil of the helical coil 510 and the innermost coil of the helical coil 520 , and partially overlaps the area surrounded by the helical coil 520 . In the embodiment shown in FIG. 5 , the number of turns of the helical coil 510 is an odd number of turns, so the leading line segment of the semiconductor device 500 partially overlaps the area surrounded by the helical coil 510 . In different embodiments, when the number of turns of the helical coil 510 is an even number of turns (such as 2 turns, 4 turns, 6 turns, etc.), the leading line segment of the semiconductor element 500 is not surrounded by the inner coil of the helical coil 510. ranges overlap.

FIG. 6 is a structural diagram of a semiconductor device according to another embodiment of the present invention. The semiconductor device 600 includes spiral coils 610 and 620 . The connection line segments 630 a and 630 b constitute the connection portion of the semiconductor element 600 . The helical coils 610 and 620 are connected by connecting parts; in more detail, the connecting line segment 630a connects the end point 612c of the helical coil 610 and the end point 622a of the helical coil 620, and the connecting line segment 630b connects the end point 612d of the helical coil 610 and the helical coil The end point 622b of the shape coil 620. The metal line segments 650 a and 650 b are lead line segments of the semiconductor device 600 , and they constitute the lead line segment of the semiconductor device 600 . One end of the metal wire segment 650 a is connected to one end point 612 a of the helical coil 610 ; one end of the metal wire segment 650 b is connected to the other end point 612 b of the helical coil 610 . The central tap (not shown) of the semiconductor device 600 is connected to the helical coil 620 through the connection region 622 c, and can be regarded as another leading segment of the semiconductor device 600 . The central tap of the semiconductor element 600 may face the right-hand direction in the figure, partially overlapping with the range surrounded by the helical coil 620; in different embodiments, the central tap may face the left-hand direction in the figure, and overlap with the helical coil The ranges enclosed by 610 partially overlap.

The helical coils 610 and 620 both have a three-turn helical structure. The end points 612c and 612d are located at the innermost turns of the helical coil 610 , and the end points 622a and 622b are located at the innermost turns of the helical coil 620 . The connection portion of the semiconductor device 600 connects the innermost coil of the helical coil 610 and the innermost coil of the helical coil 620 , and partially overlaps the area surrounded by the helical coil 620 . The lead segment portion of the semiconductor element 600 is substantially located on the same metal layer as the helical coil 610 .

7A is a structural diagram of a semiconductor device 700 according to another embodiment of the present invention, which is substantially composed of a plurality of coils implemented on two different metal layers; FIGS. 7B and 7C are detailed structural diagrams of the semiconductor device 700. FIG. 7B shows the coil of the semiconductor device 700 located on the lower metal layer, including the coil 710 and the coil 720 . Similar to the connection part 230, the connection part 730 is composed of two connection line segments, which will not be repeated here. Coil 710 includes metal wire segments 711a and 711b. The end point 712c is one end point of the metal line segment 711a, and the other end point of the metal line segment 711a is connected to the connecting portion 730 . The end point 712d is one end point of the metal line segment 711b, and the other end point of the metal line segment 711b is connected to the connecting portion 730 . The coil 720 includes metal wire segments 721a and 721b. The end point 722 a is one end point of the metal line segment 721 a , and the other end point of the metal line segment 721 a is connected to the connecting portion 730 . The end point 722b is one end point of the metal line segment 721b, and the other end point of the metal line segment 721b is connected to the connecting portion 730 .

7C shows the coil of the semiconductor element 700 located on the upper metal layer, including coil 715 and coil 725, which are located on the same plane in the semiconductor structure, but different from the plane where coil 710 and coil 720 are located, and the two are not directly connected. Coil 715 includes wire segments 716a and 716b. The metal line segment 716a has end points 717a and 717c; the end point 717c is connected to the end point 712c of the coil 710 through the through structure, and the end point 717a is directly connected to the metal line segment 750a (as shown in FIG. 7A ). The metal line segment 716b has end points 717b and 717d; the end point 717d is connected to the end point 712d of the coil 710 through the through structure, and the end point 717b is directly connected to the metal line segment 750b (as shown in FIG. 7A ). The metal line segments 750 a and 750 b and the metal line segments 750 a - 1 and 750 b - 1 (manufactured in the third metal layer) extending therefrom constitute the lead line segment portion of the semiconductor device 700 . Coil 725 includes wire segments 726a and 726b. The metal wire segment 726a has an end point 727a; the end point 727a is connected to the end point 722a of the coil 720 through the through structure. The metal wire segment 726b has an end point 727b; the end point 727b is connected to the end point 722b of the coil 720 through the through structure. In one embodiment, the metal line segments 726a and 726b can actually be regarded as the same metal line segment (with endpoints 727a and 727b as its two ends). In this embodiment, the metal line segments 726a and 726b are regarded as different metal line segments, and the two are connected at the connecting region 727c. The connection region 727c is connected to the center tap of the semiconductor device 700 (composed of metal line segments 740 and 740 - 1 , as shown in FIG. 7A ) through the through structure.

As shown in FIG. 7A , the wire segments of coil 710 substantially overlap the wire segments of coil 715 , and the wire segments of coil 720 substantially overlap the wire segments of coil 725 . The leading line segment of the semiconductor device 700 partially overlaps the area surrounded by the coil 710 and the coil 715 ; the center tap of the semiconductor device 700 partially overlaps the area surrounded by the coil 720 and the coil 725 .

The aforementioned semiconductor elements 200 , 300 , 400 , 500 , 600 and 700 can be used as integrated inductors, more specifically, figure-eight integrated inductors. Taking the semiconductor element 200 as an example, the semiconductor element 200 includes two sensing units, one of which has a metal line segment 250a (equivalent terminal 212a) and a central tap 240 (equivalent connection area 222c) as its two ends, and the other sensing unit The metal line segment 250b (equivalent end point 212b ) and the center tap 240 (equivalent connection area 222c ) are its two ends. For the induction unit including the metal wire segment 250a, after the current flows into the semiconductor element 200 from the metal wire segment 250a, it first flows through the half helical coil 210, and then enters the helical coil 220 from the connecting part 230; the current continues to flow through the half helical coil After the coil 220, it flows out from the center tap 240 at last. For the induction unit including the metal wire segment 250b, after the current flows into the semiconductor element 200 from the metal wire segment 250b, it first flows through the other half of the helical coil 210, and then enters the helical coil 220 through the connecting part 230; the current continues to flow through the other half. After a helical coil 220, it flows out from the center tap 240 at last. Since the two sensing units have substantially the same length of metal wire segments, and the distribution of the metal wire segments in each metal layer is also the same, the semiconductor device 200 has excellent symmetry. Compared with the conventional technology, the 8-shaped integrated inductor of the present invention has better symmetry. In fact, the terminal 212a and the terminal 212b can be regarded as one of the input port and the output port of the integrated inductor, while the connection area 222c can be regarded as the other. The connection areas 222c, 322, 422c, 512e, 622c and 727c are the contact points of the center tap of the integrated inductor, and the metal line segments there are actually continuous but not disconnected. The metal line segment 250 a and the metal line segment 250 b may be disposed on a redistribution layer (Re-Distribution Layer, RDL).

The aforementioned semiconductor elements 200 , 300 , 400 , 500 , 600 and 700 can also be used as integrated transformers. When used as an integrated transformer, taking the semiconductor element 200 as an example, the helical coil 220 of the semiconductor element 200 can be disconnected from the connection region 222c to form two terminals. The integrated transformer uses the terminal 212a and the terminal 212b as one of its input port and output port, and uses the two terminals derived from the connection area 222c as the other. By changing the turns ratio of the helical coil 210 and the helical coil 220 , the impedance matching effect of the integrated transformer can be adjusted or the voltage magnification can be changed.

Most of the metal line segments of the semiconductor device of the present invention can be fabricated in the Ultra Thick Metal (UTM) layer and the redistribution layer in the semiconductor structure. Taking the semiconductor device 200 in FIG. 2B as an example, most of the metal line segments of the spiral coils 210 and 220 can be made on the ultra-thick metal layer (the metal layer shown in light gray), and a small part of the metal line segments can be made on the redistribution layer (shown by the oblique line). the metal layer). In different embodiments, most of the metal wire segments of the helical coils 210 and 220 can also be made on the redistribution layer, and a small part of the metal wire segments can be made on the ultra-thick metal layer. The center tap of the semiconductor device (the center tap 240 shown in FIG. 2A ) is fabricated on other metal layers between the substrate and the ultra-thick metal layer of the semiconductor structure. In semiconductor structures, there are dielectric layers (eg, silicon dioxide) between metal layers.

Please note that the shape, number of circles, dimensions and proportions of the components in the preceding drawings are only for illustration, and are for those skilled in the art to understand the present invention, and are not intended to limit the present invention. Moreover, although the above-disclosed embodiments take integrated inductors and integrated transformers as examples, this is not a limitation to the present invention. Persons skilled in the art can appropriately apply the present invention to other types of semiconductor elements according to the disclosure of the present invention.

Although the embodiments of the present invention are as described above, these embodiments are not intended to limit the present invention, and those skilled in the art can make changes to the technical characteristics of the present invention according to the explicit or implicit contents of the present invention. All these changes may belong to the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention must be defined by the scope of patent application in this specification.

Symbol Description

100 8-shaped integrated inductor

200, 300, 400, 500, 600, 700 semiconductor components

110, 120, 210, 220, 310, 320, 410, 420, 510, 520, 610, 620 helical coil

211a, 211b, 211c, 211d, 221a, 221b, 221c, 221d, 250a, 250b, 350a, 350b, 350c, 350d, 450a, 450b, 550a, 550b, 650a, 650b, 711a, 711b, 716a, 716b, 721a, 721b, 726a, 726b, 750a, 750b, 750a-1, 750b-1, 740, 740-1 Metal wire segments

212a, 212b, 212c, 212d, 222a, 222b, 312a, 312b, 412a, 412b, 412c, 412d, 422a, 422b, 512a, 512b, 512c, 512d, 522a, 522b, 612a, 612b, 612c, 612d, 622a, 622b, 712c, 712d, 717a, 717b, 717c, 717d, 722a, 722b, 727a, 727b endpoints

222c, 322, 422c, 512e, 622c, 727c connection area

230, 330, 730 connection part

240 center tap

710, 720, 715, 725 Coils

231a, 231b, 430a, 430b, 530a, 530b, 630a, 630b connect line segments.

Claims (9)

1. a kind of semiconductor element, includes:

One first spiral coil has a first end point and one second endpoint；

One second spiral coil is located at same metal layer with first spiral coil；

One interconnecting piece connects first spiral coil and second spiral coil；

The one end in one guidance line segment portion, the guidance line segment portion connects the first end point or second endpoint；

Wherein, the model that guidance at least one of the line segment portion and the interconnecting piece are surrounded with second spiral coil Part overlapping is enclosed,

Wherein, the semiconductor element also includes:

One center tap connects one in first spiral coil and second spiral coil；

Wherein, the semiconductor element is a product body inductance, includes:

One first sensing unit take the first end point and the center tap as the both ends of first sensing unit；And

One second sensing unit take second endpoint and the center tap as the both ends of second sensing unit.

2. semiconductor element according to claim 1, wherein first spiral coil includes:

One external coil；And

One Inside coil, in the range that the external coil is surrounded；

Wherein, the range section that the guidance line segment portion and second spiral coil are surrounded overlaps, and the first end Point and second end point are located at the Inside coil.

3. semiconductor element according to claim 2, wherein the guidance line segment portion also with first spiral coil The range section surrounded overlaps.

4. semiconductor element according to claim 1, wherein

First spiral coil includes:

One first external coil；And

One first Inside coil, in the range that first external coil is surrounded；And

Second spiral coil includes:

One second external coil；And

One second Inside coil, in the range that second external coil is surrounded；

Wherein, the range section that the interconnecting piece and second spiral coil are included overlaps, and the interconnecting piece connects First external coil and second external coil.

5. semiconductor element according to claim 1, wherein

First spiral coil includes:

One first external coil；And

One first Inside coil, in the range that first external coil is surrounded；And

Second spiral coil includes:

One second external coil；And

One second Inside coil, in the range that second external coil is surrounded；

Wherein, the range section that the interconnecting piece and second spiral coil are surrounded overlaps, and the interconnecting piece connects First Inside coil and second Inside coil.

6. semiconductor element according to claim 5, wherein the first end point and second end point are located at described the One external coil.

7. semiconductor element according to claim 1, also includes:

One third endpoint, one in first spiral coil and second spiral coil；And

One the 4th endpoint, positioned at first spiral coil or second spiral coil where the third endpoint；

Wherein, the semiconductor element is a product body transformer, using the first end point and second endpoint as the product One input port of body transformer and one in an output port, and using the third endpoint and the 4th endpoint as described defeated Enter another in port and the output port.

8. a kind of semiconductor element, includes:

One first coil is located at one first plane；

One second coil is located at first plane；

One interconnecting piece connects the first coil and second coil；

One tertiary coil, is located at one second plane, and second plane is different from first plane；And

One the 4th coil is located at second plane；

Wherein, the tertiary coil is connect with the first coil by running through structure, the 4th coil and second line Circle through structure by connecting, and the tertiary coil and the 4th coil are not directly connected.

9. semiconductor element according to claim 8, wherein the metal wire sections of the tertiary coil and the first coil Metal wire sections overlap and the 4th coil metal wire sections and second coil metal wire sections overlap.