CN107728426A - Photoresist composition and method for forming metal pattern using the same - Google Patents
Photoresist composition and method for forming metal pattern using the same Download PDFInfo
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- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
本发明公开一种述光刻胶组合物，包括：酚醛清漆系树脂、二叠氮化物系感光性化合物、噻二唑系化合物、第一溶剂以及第二溶剂，其中，所述噻二唑系化合物选自用以下化学式1表示的化合物，所述第一溶剂的沸点为110℃至190℃，所述第二溶剂的沸点为200℃至400℃。<化学式1>在所述化学式1中，对X1、X2以及R3的说明请参照本说明书的记载。
The invention discloses a photoresist composition, comprising: novolac resin, diazide photosensitive compound, thiadiazole compound, first solvent and second solvent, wherein the thiadiazole The compound is selected from the compounds represented by the following Chemical Formula 1, the first solvent has a boiling point of 110°C to 190°C, and the second solvent has a boiling point of 200°C to 400°C. <chemical formula 1> In the chemical formula 1, please refer to the description in this specification for the description of X 1 , X 2 and R 3 .
Description
技术领域technical field
本发明涉及一种光刻胶组合物以及使用该组合物的金属图案的形成方法。The present invention relates to a photoresist composition and a method for forming a metal pattern using the composition.
背景技术Background technique
目前，正在研发各种各样的显示装置，液晶显示装置(liquid crystal display)、有机电致发光显示装置(organic electroluminescent display)以及等离子体显示面板(plasma display panel)等平板显示装置就是其例。Currently, various display devices are being developed, and flat display devices such as liquid crystal displays, organic electroluminescent displays, and plasma display panels are examples.
通常，使用于显示装置的显示基板包括：薄膜晶体管，作为驱动各像素区域的开关元件；连接于所述薄膜晶体管的信号配线；以及像素电极。所述信号配线包括传递栅极驱动信号的栅极线以及与所述栅极线交叉并传递数据驱动信号的数据线。Generally, a display substrate used in a display device includes: a thin film transistor as a switching element for driving each pixel region; a signal wiring connected to the thin film transistor; and a pixel electrode. The signal wiring includes a gate line transmitting a gate driving signal and a data line crossing the gate line and transmitting a data driving signal.
通常，为了形成所述薄膜晶体管、信号线以及像素电极，使用光刻工序。光刻工序在对象层上形成光刻胶图案，将所述光刻胶图案用作掩膜而对对象层进行图案化，从而获取期望的图案。Generally, in order to form the thin film transistors, signal lines, and pixel electrodes, a photolithography process is used. The photolithography process forms a photoresist pattern on a target layer, uses the photoresist pattern as a mask to pattern the target layer, and obtains a desired pattern.
在所述光刻工序中，在所述光刻胶图案与所述对象层的粘合力较低时，歪斜(skew)增加，这会导致线的不良，难于形成金属图案。In the photolithography process, when the adhesion between the photoresist pattern and the object layer is low, skew increases, which leads to defective lines and makes it difficult to form a metal pattern.
发明内容Contents of the invention
本发明提供一种新型光刻胶组合物以及使用该组合物的金属图案的形成方法。The invention provides a novel photoresist composition and a method for forming a metal pattern using the composition.
根据一方面，提供一种光刻胶组合物，包括：According to one aspect, a photoresist composition is provided, comprising:
酚醛清漆系树脂；Novolac resins;
二叠氮化物系感光性化合物；Diazide photosensitive compound;
噻二唑系化合物；Thiadiazole compounds;
第一溶剂；以及the first solvent; and
第二溶剂，second solvent,
其中，所述噻二唑系化合物选自用以下化学式1表示的化合物，Wherein, the thiadiazole-based compound is selected from compounds represented by the following chemical formula 1,
所述第一溶剂的沸点为110℃至190℃，所述第二溶剂的沸点为200℃至400℃。The boiling point of the first solvent is 110°C to 190°C, and the boiling point of the second solvent is 200°C to 400°C.
<化学式1><chemical formula 1>
在所述化学式1中，In said chemical formula 1,
X1是N或C(R1)，X2是N或C(R2)，X 1 is N or C(R 1 ), X 2 is N or C(R 2 ),
R1至R3彼此独立地选自氢、被取代或未被取代的C1-C20烷基、被取代或未被取代的C1-C20烷氧基、被取代或未被取代的C3-C10环烷基、被取代或未被取代的C6-C30芳基、被取代或未被取代的C1-C30杂芳基、-S(Q1)以及-N(Q2)(Q3)，R 1 to R 3 are independently selected from hydrogen, substituted or unsubstituted C 1 -C 20 alkyl, substituted or unsubstituted C 1 -C 20 alkoxy, substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 6 -C 30 aryl, substituted or unsubstituted C 1 -C 30 heteroaryl, -S(Q 1 ) and -N( Q 2 )(Q 3 ),
选自所述被取代的C1-C20烷基、被取代的C1-C20烷氧基、被取代的C3-C10环烷基、被取代的C6-C30芳基以及被取代的C1-C30杂芳基的取代基中的至少一个，选自重氢、-F、-Cl、-Br、-I、羟基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基，selected from the substituted C 1 -C 20 alkyl, substituted C 1 -C 20 alkoxy, substituted C 3 -C 10 cycloalkyl, substituted C 6 -C 30 aryl and At least one of the substituents of the substituted C 1 -C 30 heteroaryl is selected from heavy hydrogen, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 10 alkyl , C 1 -C 10 alkoxy and C 6 -C 20 aryl,
所述Q1至Q3彼此独立地选自氢、重氢、-F、-Cl、-Br、-I、羟基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基。The Q 1 to Q 3 are independently selected from hydrogen, heavy hydrogen, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 10 alkyl, C 1 -C 10 Alkoxy and C 6 -C 20 aryl.
根据另一方面，提供一种金属图案的形成方法，包括：According to another aspect, a method for forming a metal pattern is provided, including:
在基板上形成金属层的步骤；the step of forming a metal layer on the substrate;
在所述金属层上涂布如上所述的光刻胶组合物，从而形成涂层的步骤；coating the photoresist composition as described above on the metal layer, thereby forming a coating step;
对所述涂层进行加热的步骤；the step of heating said coating;
对所述涂层进行曝光的步骤；exposing said coating to light;
部分去除所述涂层，形成光刻胶图案的步骤；以及partially removing said coating to form a photoresist pattern; and
将所述光刻胶图案用作掩膜，对所述金属层进行图案化的步骤。patterning the metal layer using the photoresist pattern as a mask.
所述光刻胶组合物包括用所述化学式1表示的噻二唑系化合物，因此与基板之间的粘合力出色，可以形成减少了在蚀刻过程中发生的歪斜(skew)的金属图案。The photoresist composition includes the thiadiazole-based compound represented by the Chemical Formula 1, and thus has excellent adhesion to a substrate, and can form a metal pattern with reduced skew occurring during etching.
所述光刻胶组合物包括所述第一溶剂与第二溶剂，因此可以形成厚度均匀且图案形状的均匀度出色的金属图案。The photoresist composition includes the first solvent and the second solvent, so a metal pattern having uniform thickness and excellent pattern shape uniformity can be formed.
附图说明Description of drawings
图1至图7是示意性地显示根据一实现例的金属图案的形成方法的图。1 to 7 are diagrams schematically showing a method of forming a metal pattern according to an implementation example.
符号说明Symbol Description
10：基板 20：金属层10: Substrate 20: Metal layer
25：金属图案 30：涂层25: metal pattern 30: coating
35：光刻胶图案 LEA：曝光区域35: Photoresist Pattern LEA: Exposure Area
LBA：遮光区域LBA: shading area
具体实施方式Detailed ways
本发明可以进行各种转换且可以具有多种实施例，将特定实施例例示于附图中并在详细说明中具体说明。本发明的效果和特征以及实现它们的方法，通过参照在下文中与附图一同详细说明的实施例变得更加明确。但是，本发明并不限定于以下公开的实施例，而可以体现为各种形式。While the present invention is susceptible to various transformations and embodiments, specific embodiments are shown in the drawings and described in detail in the detailed description. Effects and features of the present invention and methods for achieving them will become more apparent by referring to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be embodied in various forms.
在本说明书中，第一及第二等术语并不具有限定的意义，其使用的目的在于将一个构成要素与其他构成要素区别开。In this specification, terms such as first and second do not have a limiting meaning, and are used for the purpose of distinguishing one constituent element from other constituent elements.
在本说明书中，单数的表述只要在上下文中没有明确表示不同含义，则包括复数的表述。In this specification, a singular expression includes a plural expression as long as it does not clearly indicate a different meaning in the context.
在本说明书中，“包括”或者“具有”等术语表示说明书上记载的特征或者构成要素的存在，并不预先排除一个以上的其他特征或者构成要素的附加可能性。In this specification, terms such as "comprising" or "having" indicate the existence of the features or constituent elements described in the specification, and do not preclude the possibility of adding one or more other features or constituent elements in advance.
在本说明书中，光刻胶图案是在将金属层图案化时使用的掩膜，意味着对通过涂布光刻胶组合物而形成的涂层进行局部曝光而形成的预定的图案。In this specification, a photoresist pattern is a mask used when patterning a metal layer, and means a predetermined pattern formed by partially exposing a coating layer formed by applying a photoresist composition.
在本说明书中，金属图案意味着使用所述光刻胶图案并通过蚀刻工序将金属层图案化而形成的预定的图案。In this specification, a metal pattern means a predetermined pattern formed by patterning a metal layer through an etching process using the photoresist pattern.
在本说明书中，沸点意味着在1气压(760mmHg)下液态化合物开始向气态发生相变的温度。In this specification, the boiling point means the temperature at which a liquid compound starts to undergo a phase transition to a gaseous state at 1 atmosphere (760 mmHg).
在本说明书中，C1-C20烷基意味着碳原子数为1至20的线型或者分枝型脂肪族烃一价(monovalent)基团，具体的示例包含甲基、乙基、丙基、异丁基、仲丁基、叔丁基、戊基、异戊基、己基等。In this specification, C 1 -C 20 alkyl means a linear or branched aliphatic hydrocarbon monovalent group with 1 to 20 carbon atoms, specific examples include methyl, ethyl, propylene Base, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, etc.
在本说明书中，C1-C20烷氧基意味着具有-OA101(其中，A101是所述C1-C20烷基)化学式的一价基团，作为它的具体示例包含甲氧基、乙氧基、异丙氧基等。In this specification, C 1 -C 20 alkoxy means a monovalent group having the chemical formula -OA 101 (wherein A 101 is the C 1 -C 20 alkyl group), and specific examples thereof include methoxy base, ethoxy, isopropoxy, etc.
在本说明书中，C3-C10环烷基意味着碳原子数为3至10的一价饱和烃单环基团，作为它的具体示例，包含环丙基、环丁基、环戊基、环己基、环庚基等。In this specification, C 3 -C 10 cycloalkyl means a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and its specific examples include cyclopropyl, cyclobutyl, cyclopentyl , cyclohexyl, cycloheptyl, etc.
在本说明书中，C6-C30芳基意味着具有碳原子数为6至30个的碳环芳香族系的一价(monovalent)基团，C6-C60亚芳基意味着具有碳原子数为6至60个的碳环芳香族系的二价(divalent)基团。所述C6-C60芳基的具体例包括苯基、萘基、蒽基、菲基、芘基、基(chrysenyl)等。In this specification, a C 6 -C 30 aryl group means a monovalent (monovalent) group of a carbocyclic aromatic system having 6 to 30 carbon atoms, and a C 6 -C 60 arylene group means a group having a carbon A carbocyclic aromatic divalent group having 6 to 60 atoms. Specific examples of the C 6 -C 60 aryl include phenyl, naphthyl, anthracenyl, phenanthrenyl, pyrenyl, Base (chrysenyl) and so on.
在本说明书中，C1-C30杂芳基意味着将从N、O、Si、P以及S中选择的至少一个杂原子作为环形成原子包含且具有碳原子数为1至30个的杂环芳系的一价基团。In this specification, the C 1 -C 30 heteroaryl group means that at least one heteroatom selected from N, O, Si, P, and S is contained as a ring-forming atom and has a heteroatom having 1 to 30 carbon atoms. Monovalent group of ring aromatic system.
在本说明书中，从被取代的C1-C20烷基、被取代的C1-C20烷氧基、被取代的C3-C10环烷基、被取代的C6-C30芳基以及被取代的C1-C30杂芳基的取代基中所选择的至少一个，选自重氢、-F、-Cl、-Br、-I、羟基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基。In this specification, from substituted C 1 -C 20 alkyl, substituted C 1 -C 20 alkoxy, substituted C 3 -C 10 cycloalkyl, substituted C 6 -C 30 aromatic group and at least one of the substituents of the substituted C 1 -C 30 heteroaryl group selected from deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 - C 10 alkyl, C 1 -C 10 alkoxy and C 6 -C 20 aryl.
在本说明书中，Q1至Q3彼此独立地选自氢、重氢、-F、-Cl、-Br、-I、羟基、氰基、硝基、C1-C10烷基、C1-C10烷氧基以及C6-C20芳基。In this specification, Q 1 to Q 3 are independently selected from hydrogen, heavy hydrogen, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 10 alkyl, C 1 -C 10 alkoxy and C 6 -C 20 aryl.
以下，对根据本发明的一实现例的光刻胶组合物进行说明。Hereinafter, a photoresist composition according to an implementation example of the present invention will be described.
所述光刻胶组合物包括酚醛清漆系树脂(novolac resin)、二叠氮化物(diazide)系感光性化合物、噻二唑系化合物、第一溶剂以及第二溶剂。The photoresist composition includes a novolac resin, a diazide photosensitive compound, a thiadiazole compound, a first solvent and a second solvent.
所述酚醛清漆系树脂是粘合剂树脂，成为所述光刻胶组合物的基本成分(base)，且为碱溶性。The novolak-based resin is a binder resin, serves as a base of the photoresist composition, and is alkali-soluble.
所述酚醛清漆系树脂可以包括酚类化合物与醛类化合物或者酮类化合物的缩聚物。例如，所述酚醛清漆系树脂可以通过在酸催化剂下使酚类化合物与醛类化合物或者酮类化合物缩聚反应而制造。The novolac-based resin may include a polycondensate of a phenolic compound and an aldehyde compound or a ketone compound. For example, the novolak-based resin can be produced by polycondensing a phenolic compound with an aldehyde compound or a ketone compound under an acid catalyst.
所述酚类化合物可以包括选自酚、邻甲酚、间甲酚、对甲基苯酚、2,3-二甲基苯酚、3,4-二甲基苯酚、3,5-二甲基苯酚、2,4-二甲基苯酚、2,6-二甲基苯酚、2,3,6-三甲基苯酚、2-叔丁基酚、3-叔丁基酚、4-叔丁基酚、2-甲基间苯二酚、4-甲基间苯二酚、5-甲基间苯二酚、4-叔丁基儿茶酚、2-甲氧基酚、3-甲氧基酚、2-丙基苯酚、3-丙基苯酚、4-丙基苯酚、2-异丙基苯酚、2-甲氧基-5-甲基苯酚、2-叔丁基-5-甲基苯酚、百里酚以及异麝香草酚(isothymol)中的至少一种。The phenolic compound may include phenol, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol , 2,4-dimethylphenol, 2,6-dimethylphenol, 2,3,6-trimethylphenol, 2-tert-butylphenol, 3-tert-butylphenol, 4-tert-butylphenol , 2-methylresorcinol, 4-methylresorcinol, 5-methylresorcinol, 4-tert-butylcatechol, 2-methoxyphenol, 3-methoxyphenol , 2-propylphenol, 3-propylphenol, 4-propylphenol, 2-isopropylphenol, 2-methoxy-5-methylphenol, 2-tert-butyl-5-methylphenol, At least one of thymol and isothymol.
所述醛类化合物可以包括选自甲醛、福尔马林、多聚甲醛、三聚甲醛、乙醛、丙醛、苯甲醛、苯乙醛、α-苯丙醛、β-苯丙醛、邻羟基苯甲醛、间羟基苯甲醛、对羟基苯甲醛、邻氯苯甲醛、间氯苯甲醛、对氯苯甲醛、邻甲基苯甲醛、间甲基苯甲醛、对甲基苯甲醛、对乙基苯甲醛、p-n-丁基苯甲醛以及对苯二甲醛中的至少一种。The aldehyde compounds may include formaldehyde, formalin, paraformaldehyde, paraformaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, phenylacetaldehyde, alpha-phenylpropionaldehyde, beta-phenylpropionaldehyde, ortho Hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, o-tolualdehyde, m-tolualdehyde, p-tolualdehyde, p-ethyl At least one of benzaldehyde, p-n-butylbenzaldehyde and terephthalaldehyde.
所述酮类化合物可以包括选自丙酮、甲基乙基酮、二乙基酮以及二苯基酮的至少一种。The ketone compound may include at least one selected from acetone, methyl ethyl ketone, diethyl ketone and diphenyl ketone.
所述酸催化剂可以从硫酸、盐酸、甲酸、乙酸以及草酸中选择。The acid catalyst can be selected from sulfuric acid, hydrochloric acid, formic acid, acetic acid and oxalic acid.
根据一实现例，所述酚醛清漆系树脂包括间甲酚与对甲基苯酚的缩聚物，所述间甲酚对所述对甲基苯酚的重量比可以是2:8至8:2。根据另一实现例，所述间甲酚对所述对甲基苯酚的重量比可以是5:5。如果所述间甲酚对所述对甲基苯酚的重量比在所述范围内，则可以形成厚度均匀、斑点少的光刻胶图案。According to an implementation example, the novolac resin includes a polycondensate of m-cresol and p-cresol, and the weight ratio of the m-cresol to the p-cresol may be 2:8 to 8:2. According to another implementation example, the weight ratio of the m-cresol to the p-cresol may be 5:5. If the weight ratio of the m-cresol to the p-cresol is within the range, a photoresist pattern with uniform thickness and less spots can be formed.
所述酚醛清漆系树脂，通过凝胶渗透色谱法(GPC)测定的单分散聚苯乙烯换算的重均分子量可以是1,000至50,000g/mol。根据一实现例，所述酚醛清漆系树脂，通过凝胶渗透色谱法(GPC)测定的单分散聚苯乙烯换算的重均分子量可以是3,000至20,000g/mol。The novolac-based resin may have a monodisperse polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) of 1,000 to 50,000 g/mol. According to an implementation example, the novolac-based resin may have a monodisperse polystyrene-equivalent weight average molecular weight measured by gel permeation chromatography (GPC) of 3,000 to 20,000 g/mol.
在所述酚醛清漆系树脂的重均分子量低于约1,000时，所述酚醛清漆系树脂容易溶解于显影液而受损，在所述酚醛清漆系树脂的重均分子量超过约50,000时，在形成光刻胶图案时曝光的部分与不曝光的部分中对显影液的溶解度差异较小，因此很难得到鲜明的金属图案。When the weight average molecular weight of the novolac resin is less than about 1,000, the novolak resin is easily dissolved in a developer and damaged, and when the weight average molecular weight of the novolac resin exceeds about 50,000, the When the photoresist is patterned, the difference in the solubility of the developer between the exposed part and the non-exposed part is small, so it is difficult to obtain a clear metal pattern.
所述酚醛清漆系树脂的含量，相对于所述组合物的总含量100重量份，可以是5至30重量份。根据一实现例，所述酚醛清漆系树脂的含量，相对于所述组合物的总含量100重量份，可以是10至25重量份。在所述酚醛清漆系树脂的含量相对于所述组合物的总含量100重量份低于5重量份时，很难得到鲜明的光刻胶图案且容易产生斑点，在所述酚醛清漆系树脂的含量相对于所述组合物的总含量100重量份超过30重量份时，金属图案对基板的粘合力以及感光度可能会下降。The content of the novolak-based resin may be 5 to 30 parts by weight relative to 100 parts by weight of the total content of the composition. According to an implementation example, the content of the novolac resin may be 10 to 25 parts by weight relative to 100 parts by weight of the total composition. When the content of the novolak-based resin is less than 5 parts by weight relative to the total content of 100 parts by weight of the composition, it is difficult to obtain a clear photoresist pattern and spots are likely to occur. When the content exceeds 30 parts by weight with respect to 100 parts by weight of the total content of the composition, the adhesion of the metal pattern to the substrate and the sensitivity may decrease.
所述二叠氮化物系感光性化合物是难碱溶性，或者曝光时产生酸，且可以相变为碱溶性。另一方面，所述酚醛清漆系树脂在与碱溶性或者所述二叠氮化物系感光性化合物混合的状态下，由于物理相互作用，对碱的溶解度可能会显著下降。因此，涂层中曝光区域，由于所述二叠氮化物系感光性化合物的分解，可能会促进所述酚醛清漆系树脂对碱的溶解，但是，涂层中未曝光的区域，不发生那样的化学变化作用，因此还残留为难碱溶性。The diazide-based photosensitive compound is poorly alkali-soluble, or generates an acid upon exposure, and may change phase to alkali-soluble. On the other hand, when the novolak-based resin is mixed with an alkali-soluble or diazide-based photosensitive compound, the solubility to alkali may be significantly reduced due to physical interaction. Therefore, in the exposed area of the coating, due to the decomposition of the diazide photosensitive compound, the dissolution of the novolac resin to alkali may be promoted, but in the unexposed area of the coating, such a phenomenon does not occur. Chemical change, so it remains poorly soluble in alkali.
例如，所述二叠氮化物系感光性化合物可以包括醌二叠氮化物类化合物。所述醌二叠氮化物类化合物可以通过在弱碱环境下使二叠氮基萘醌磺酸酯卤素化合物与酚化合物反应而制造。For example, the diazide-based photosensitive compound may include a quinonediazide-based compound. The quinonediazide-based compound can be produced by reacting a naphthoquinonediazidesulfonate halogen compound with a phenol compound in a weakly alkaline environment.
所述酚化合物可以包括选自2,3,4-三羟基二苯甲酮、2,4,6-三羟基二苯甲酮、2,3,4,3’-四羟基二苯甲酮、2,3,4,4’-四羟基二苯甲酮、三(对羟基苯基)甲烷、1,1,1-三(对羟基苯基)乙烷以及4,4'-[1-[4-[1-[4-羟基苯基]-1-甲基乙基]苯基]亚乙基]联苯酚中的至少一种。The phenolic compound may include 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, tris(p-hydroxyphenyl)methane, 1,1,1-tris(p-hydroxyphenyl)ethane and 4,4'-[1-[ At least one of 4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylene]biphenol.
所述二叠氮基萘醌磺酸酯卤素化合物可以包括选自1,2-二叠氮基萘醌4-磺酸酯、1,2-二叠氮基萘醌5-磺酸酯以及1,2-二叠氮基萘醌6-磺酸酯中的至少一种。The halogen compound of diazidenaphthoquinone sulfonate may include 1,2-diazidonaphthoquinone 4-sulfonate, 1,2-diazidonaphthoquinone 5-sulfonate and 1 , at least one of 2-diazidonaphthoquinone 6-sulfonates.
根据一实现例，所述二叠氮化物系感光性化合物可以包括选自2,3,4-三羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯以及2,3,4,4’-四羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯中的至少一种。作为所述二叠氮化物系感光性化合物而使用2,3,4-三羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯以及2,3,4,4’-四羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯的混合物时，2,3,4-三羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯与2,3,4,4’-四羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯的重量比可以是2:8至5:5。According to an implementation example, the diazide-based photosensitive compound may include 2,3,4-trihydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate and 2 , at least one of 3,4,4'-tetrahydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate. As the diazide-based photosensitive compound, 2,3,4-trihydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate and 2,3,4,4 2,3,4-Trihydroxybenzophenone-1,2-diazido The weight ratio of naphthoquinone-5-sulfonate to 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate can be 2:8 to 5:5.
所述二叠氮化物系感光性化合物的含量，相对于所述组合物的总含量100重量份，可以是2至10重量份。根据一实现例，所述二叠氮化物系感光性化合物的含量，相对于所述组合物的总含量100重量份，可以是5至8重量份。在所述二叠氮化物系感光性化合物的含量相对于所述组合物的总含量100重量份不足2重量份时，涂层中曝光部分的溶解度增加，无法形成光刻胶图案，在所述二叠氮化物系感光性化合物的含量相对于所述组合物的总含量100重量份超过10重量份时，涂层中曝光部分的溶解度减少，从而无法通过碱性显影液进行显影。The content of the diazide-based photosensitive compound may be 2 to 10 parts by weight relative to 100 parts by weight of the total content of the composition. According to an implementation example, the content of the diazide-based photosensitive compound may be 5 to 8 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the diazide-based photosensitive compound is less than 2 parts by weight relative to the total content of 100 parts by weight of the composition, the solubility of the exposed portion in the coating layer increases, and a photoresist pattern cannot be formed. When the content of the diazide-based photosensitive compound exceeds 10 parts by weight with respect to 100 parts by weight of the total content of the composition, the solubility of the exposed portion in the coating layer decreases, making it impossible to develop with an alkaline developer.
所述噻二唑(Thiadiazol)系化合物提高所述光刻胶组合物的粘合性，从而发挥提高由所述光刻胶组合物形成的光刻胶图案对基板的粘合性的作用。所述噻二唑系化合物可以选自用以下化学式1表示的化合物。The thiadiazol-based compound improves the adhesiveness of the photoresist composition, thereby improving the adhesiveness of the photoresist pattern formed from the photoresist composition to the substrate. The thiadiazole-based compound may be selected from compounds represented by Chemical Formula 1 below.
<化学式1><chemical formula 1>
在所述化学式1中，X1可以是N或C(R1)，X2可以是N或C(R2)。其中，对所述R1以及R2的说明参照本说明书的记载。In the Chemical Formula 1, X 1 may be N or C(R 1 ), and X 2 may be N or C(R 2 ). Wherein , for the description of R1 and R2, refer to the description in this specification.
根据一实现例，在所述化学式1中，X1以及X2可以是N。According to an implementation example, in the chemical formula 1, X 1 and X 2 may be N.
在所述化学式1中，R1至R3彼此独立地可以选自氢、被取代或未被取代的C1-C20烷基、被取代或未被取代的C1-C20烷氧基、被取代或未被取代的C3-C10环烷基、被取代或未被取代的C6-C30芳基、被取代或未被取代的C1-C30杂芳基、-S(Q1)以及-N(Q2)(Q3)。其中，对Q1以及Q3的说明参照本说明书的记载。In the chemical formula 1, R 1 to R 3 independently of each other may be selected from hydrogen, substituted or unsubstituted C 1 -C 20 alkyl, substituted or unsubstituted C 1 -C 20 alkoxy , substituted or unsubstituted C 3 -C 10 cycloalkyl, substituted or unsubstituted C 6 -C 30 aryl, substituted or unsubstituted C 1 -C 30 heteroaryl, -S (Q 1 ) and -N(Q 2 )(Q 3 ). Among them, for the description of Q1 and Q3 , refer to the description in this manual.
例如，R1至R3彼此独立地从氢、C1-C10烷基、C1-C10烷氧基、苯基、联苯基、三联苯基、萘基、-S(Q1)以及-N(Q2)(Q3)中选择，For example, R 1 to R 3 are independently selected from hydrogen, C 1 -C 10 alkyl, C 1 -C 10 alkoxy, phenyl, biphenyl, terphenyl, naphthyl, -S(Q 1 ) and -N(Q 2 )(Q 3 ),
所述Q1至Q3彼此独立地可以从氢以及C1-C5烷基中选择。The Q 1 to Q 3 independently of each other can be selected from hydrogen and C 1 -C 5 alkyl.
根据一实现例，R1至R2彼此独立地可以从氢以及C1-C10烷基中选择，According to an implementation example, R 1 to R 2 can be independently selected from hydrogen and C 1 -C 10 alkyl,
R3可以从-SH以及-NH2中选择。R 3 can be selected from -SH and -NH 2 .
所述噻二唑系化合物可以包括3-巯基丙基甲基二甲氧基硅烷(3-Mercaptopropylmethyldimethoxysilane)、3-巯基丙基三甲氧基硅烷(3-Mercaptopropyltrimethoxysilane)或者它们的任意组合。The thiadiazole compound may include 3-Mercaptopropylmethyldimethoxysilane, 3-Mercaptopropyltrimethoxysilane or any combination thereof.
所述噻二唑系化合物的含量，相对于所述组合物的总含量100重量份，可以是0.01至0.25重量份。根据一实现例，所述噻二唑系化合物的含量，相对于所述组合物的总含量100重量份，可以是0.05至0.2重量份。在所述噻二唑系化合物的含量相对于所述组合物的总含量100重量份低于0.01重量份时，金属图案对基板的粘合力可能会下降，在所述噻二唑系化合物的含量相对于所述组合物的总含量100重量份超过0.1重量份时，很难得到鲜明的金属图案。The content of the thiadiazole-based compound may be 0.01 to 0.25 parts by weight relative to 100 parts by weight of the total content of the composition. According to an implementation example, the content of the thiadiazole-based compound may be 0.05 to 0.2 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the thiadiazole-based compound is less than 0.01 parts by weight relative to 100 parts by weight of the total content of the composition, the adhesion of the metal pattern to the substrate may decrease. When the content exceeds 0.1 part by weight with respect to 100 parts by weight of the total content of the composition, it becomes difficult to obtain a clear metal pattern.
所述第一溶剂发挥通过提高所述光刻胶组合物的溶解度使光刻胶层的形成变得容易的作用，沸点可以是110℃至190℃。所述第一溶剂的沸点比较低，所以具有较高的挥发性，在形成光刻胶层时，可以通过干燥工序容易去除，据此可以缩短工序时间。根据一实现例，所述第一溶剂的沸点可以是119℃至172℃。The first solvent plays a role of facilitating the formation of the photoresist layer by increasing the solubility of the photoresist composition, and may have a boiling point of 110°C to 190°C. The boiling point of the first solvent is relatively low, so it has high volatility, and can be easily removed through a drying process when forming the photoresist layer, thereby shortening the process time. According to an implementation example, the boiling point of the first solvent may be 119°C to 172°C.
根据一实现例，所述第一溶剂可以包括选自丙二醇甲醚醋酸酯(PGMEA)、苯甲醇、2-甲烷氧基乙基乙酯、丙二醇单甲醚、甲基乙基酮、甲基异丁基甲酮以及1-甲基-2-吡咯烷酮中的至少一种。根据又一实现例，所述第一溶剂可以选自丙二醇甲醚醋酸酯(PGMEA)以及苯甲醇。According to an implementation example, the first solvent may include propylene glycol methyl ether acetate (PGMEA), benzyl alcohol, 2-methoxyethyl ethyl ester, propylene glycol monomethyl ether, methyl ethyl ketone, methyl iso At least one of butyl ketone and 1-methyl-2-pyrrolidone. According to yet another implementation example, the first solvent may be selected from propylene glycol methyl ether acetate (PGMEA) and benzyl alcohol.
所述第一溶剂的含量，相对于所述组合物的总含量100重量份，可以是65至90重量份。根据一实现例，所述第一溶剂的含量，相对于所述组合物的总含量100重量份，可以是70至85重量份。在所述第一溶剂的含量相对于所述组合物的总含量100重量份低于65重量份时，所述光刻胶组合物的溶解度可能会下降，在所述第一溶剂的含量相对于所述组合物的总含量100重量份超过90重量份时，在光刻胶图案中可能会产生斑点。The content of the first solvent may be 65 to 90 parts by weight relative to 100 parts by weight of the total content of the composition. According to an implementation example, the content of the first solvent may be 70 to 85 parts by weight relative to 100 parts by weight of the total composition. When the content of the first solvent is less than 65 parts by weight relative to 100 parts by weight of the total composition, the solubility of the photoresist composition may decrease. When the total content of the composition exceeds 90 parts by weight per 100 parts by weight, spots may be generated in the resist pattern.
所述第二溶剂发挥在将所述光刻胶组合物涂布到基板时使厚度均匀且防止发生斑点以及倒锥现象的作用，沸点可以是200℃至400℃。根据一实现例，所述第二溶剂的沸点可以是216℃至255℃。The second solvent functions to make the thickness uniform and prevent spots and reverse cones when the photoresist composition is applied to a substrate, and has a boiling point of 200°C to 400°C. According to an implementation example, the boiling point of the second solvent may be 216°C to 255°C.
根据一实现例，所述第二溶剂可以包括选自二乙二醇二丁醚(DBDG)、三乙二醇二甲醚(DMTG)、戊二酸二甲酯、己二酸二甲酯、二甲基-2-戊二酸二甲酯、丁二酸二甲酯、己二酸二异丁酯、戊二酸二异丁脂以及丁二酸二异丁酯中的至少一种。根据另一实现例，所述第二溶剂可以选自二甲基-2-戊二酸二甲酯、己二酸二甲酯以及丁二酸二异丁酯。According to an implementation example, the second solvent may include diethylene glycol dibutyl ether (DBDG), triethylene glycol dimethyl ether (DMTG), dimethyl glutarate, dimethyl adipate, At least one of dimethyl-2-glutaric acid dimethyl, dimethyl succinate, diisobutyl adipate, diisobutyl glutarate and diisobutyl succinate. According to another implementation example, the second solvent may be selected from dimethyl-2-glutaric acid dimethyl, dimethyl adipate and diisobutyl succinate.
所述第二溶剂的含量，相对于所述组合物的总含量100重量份，可以是1至25重量份。根据一实现例，所述第二溶剂的含量，相对于所述组合物的总含量100重量份，可以是2至20重量份。在所述第二溶剂的含量相对于所述组合物的总含量100重量份低于1重量份时，光刻胶层金属图案可能会出现斑点，在所述第二溶剂的含量相对于所述组合物的总含量100重量份超过25重量份时，干燥时间增加，工序时间会变长。The content of the second solvent may be 1 to 25 parts by weight relative to 100 parts by weight of the total content of the composition. According to an implementation example, the content of the second solvent may be 2 to 20 parts by weight relative to 100 parts by weight of the total content of the composition. When the content of the second solvent is less than 1 part by weight relative to the total content of 100 parts by weight of the composition, spots may appear in the metal pattern of the photoresist layer. When the total content of 100 parts by weight of the composition exceeds 25 parts by weight, the drying time will increase and the process time will become long.
所述光刻胶组合物还可以包括添加剂，所述添加剂包括选自着色剂、分散剂、抗氧化剂、紫外线吸收剂、表面活性剂、均化剂、塑化剂、填料、颜料以及染料中的至少一种。The photoresist composition can also include additives, and the additives include selected from colorants, dispersants, antioxidants, ultraviolet absorbers, surfactants, leveling agents, plasticizers, fillers, pigments and dyes. at least one.
所述分散剂可以包括高分子型、非离子型、阴离子型或者阳离子型分散剂。例如，所述分散剂可以包括选自聚烷撑二醇(polyalkylene glycol)以及它的酯、聚氧化烯多元醇、酯氧化烯(ester alkylene oxide)酯烯化氧加合物(ester alkylene oxideadducts)、磺酸酯、磺酸盐、羧酸酯、羧酸盐、烷基酰胺烯化氧加合物以及烷基胺中的至少一种。The dispersant may include polymeric, nonionic, anionic or cationic dispersants. For example, the dispersing agent may include polyalkylene glycol (polyalkylene glycol) and its ester, polyoxyalkylene polyol, ester oxide alkylene (ester alkylene oxide) ester alkylene oxide adducts (ester alkylene oxide adducts) , sulfonate, sulfonate, carboxylate, carboxylate, alkylamide alkylene oxide adduct and at least one of alkylamine.
所述抗氧化剂可以包括选自2,2-硫代双(4-甲基-6-叔丁基酚)以及2,6-二叔丁基酚中的至少一种。The antioxidant may include at least one selected from 2,2-thiobis(4-methyl-6-tert-butylphenol) and 2,6-di-tert-butylphenol.
所述紫外线吸收剂可以包括选自2-(3叔丁基-5-甲基-2-羟基苯基)-5-氯-苯并三唑以及烷氧基苯甲酮(Alkoxy benzophenone)中的至少一种。The ultraviolet absorber may include selected from 2-(3 tert-butyl-5-methyl-2-hydroxyphenyl)-5-chloro-benzotriazole and alkoxy benzophenone (Alkoxy benzophenone) at least one.
所述表面活性剂发挥改善与基板之间的涂布性的作用，可以使用氟系表面活性剂或者硅系表面活性剂。The surfactant functions to improve coatability with the substrate, and a fluorine-based surfactant or a silicon-based surfactant can be used.
所述添加剂的含量，相对于所述组合物的总含量100重量份，可以是0.01至30重量份。The content of the additive may be 0.01 to 30 parts by weight relative to 100 parts by weight of the total content of the composition.
所述光刻胶组合物可以通过在第一溶剂与第二溶剂的混合溶液中混合酚醛清漆系树脂、二叠氮化物系感光性化合物以及用所述化学式1表示的噻二唑系化合物来制造。例如，所述光刻胶组合物可以通过将酚醛清漆系树脂、二叠氮化物系感光性化合物以及用所述化学式1表示的噻二唑系化合物投入到包含第一溶剂与第二溶剂的混合溶剂的搅拌机后在40至80℃的温度下搅拌而制造。The photoresist composition can be produced by mixing a novolac resin, a diazide photosensitive compound, and a thiadiazole compound represented by the chemical formula 1 in a mixed solution of a first solvent and a second solvent. . For example, the photoresist composition can be obtained by adding a novolac resin, a diazide photosensitive compound, and a thiadiazole compound represented by the chemical formula 1 into a mixed solvent containing a first solvent and a second solvent. The solvent is manufactured by stirring at a temperature of 40 to 80°C after agitator.
以下，参照附图说明利用根据本发明的一实现例的光刻胶组合物的金属图案的形成方法。Hereinafter, a method of forming a metal pattern using a photoresist composition according to an implementation example of the present invention will be described with reference to the drawings.
图1至图7是示意性地显示根据本发明的一实现例的金属图案的形成方法的图。1 to 7 are diagrams schematically showing a method of forming a metal pattern according to an implementation example of the present invention.
参照图1，在基板10上形成金属层20。所述金属层20可以包括铜、铬、铝、钼、镍、锰、钛、银或者它们的合金。根据一实现例，所述金属层20可以包括铜。Referring to FIG. 1 , a metal layer 20 is formed on a substrate 10 . The metal layer 20 may include copper, chromium, aluminum, molybdenum, nickel, manganese, titanium, silver or alloys thereof. According to an implementation example, the metal layer 20 may include copper.
另外，所述金属层20可以具有单层结构或者包括彼此不同的金属层的多层结构。例如，所述金属层20可以包括铜层以及配置于所述铜层下方的钛层，或者可以包括铜层以及配置于所述铜层下方的锰层。另外，在所述金属层20与所述基板10之间还可以形成有包括铟氧化物、锡氧化物、锌氧化物、铟锌氧化物、铟锡氧化物、铟镓氧化物、铟镓锌氧化物等的金属氧化物层。例如，所述铜层的厚度可以是约至约所述钛层以及所述金属氧化物层的厚度可以是约至约 In addition, the metal layer 20 may have a single-layer structure or a multi-layer structure including metal layers different from each other. For example, the metal layer 20 may include a copper layer and a titanium layer disposed below the copper layer, or may include a copper layer and a manganese layer disposed below the copper layer. In addition, between the metal layer 20 and the substrate 10 may also be formed a layer comprising indium oxide, tin oxide, zinc oxide, indium zinc oxide, indium tin oxide, indium gallium oxide, indium gallium zinc Oxide and other metal oxide layers. For example, the thickness of the copper layer can be about to about The thickness of the titanium layer and the metal oxide layer can be about to about
参照图2，在所述金属层20上涂布光刻胶组合物形成涂层30。对所述光刻胶组合物的说明参照本说明书的记载。Referring to FIG. 2 , a photoresist composition is coated on the metal layer 20 to form a coating 30 . For the description of the photoresist composition, refer to the description in this specification.
所述光刻胶组合物可以通过如旋涂法、狭缝涂布法、浸涂法、喷涂法或者印刷法等通常的涂布方法涂布到金属层20上。The photoresist composition can be coated on the metal layer 20 by a common coating method such as spin coating, slit coating, dip coating, spray coating or printing.
例如，在通过狭缝涂布法涂布所述光刻胶组合物时，涂布速度可以是10至400mm/s。For example, when the photoresist composition is coated by a slit coating method, the coating speed may be 10 to 400 mm/s.
接着，在真空室内，在0.5至3.0Torr的压力下，对所述涂层30进行减压干燥30秒至100秒。通过所述减压干燥，可以部分去除涂层中的溶剂。Next, in a vacuum chamber, the coating 30 is dried under reduced pressure for 30 seconds to 100 seconds under a pressure of 0.5 to 3.0 Torr. The solvent in the coating can be partially removed by the drying under reduced pressure.
参照图3，为了预烘干，加热形成有所述涂层30的基板10。为了所述预烘干，在加热板(heat plate)中，可以在约80℃至约120℃的温度下，对所述基板10加热约30秒至约100秒。Referring to FIG. 3 , for pre-baking, the substrate 10 on which the coating layer 30 is formed is heated. For the pre-baking, the substrate 10 may be heated for about 30 seconds to about 100 seconds at a temperature of about 80° C. to about 120° C. in a heat plate.
通过所述预烘干，追加去除涂层中的溶剂，可以提高所述涂层30的形状稳定性。Through the pre-drying, the solvent in the coating is additionally removed, which can improve the shape stability of the coating 30 .
参照图4，向所述涂层30照射具有400nm至500nm的波长的光1至20秒，使其部分曝光。为了所述涂层30的部分曝光，可以使用具有与曝光区域(LEA)对应的透光层以及与遮光区域(LBA)对应的遮光层的掩膜。作为曝光方法可以利用高压水银灯、氙灯、碳弧灯、卤素灯、复印机用冷阴极管、LED、半导体激光等周知的手段。Referring to FIG. 4 , light having a wavelength of 400 nm to 500 nm is irradiated to the coating layer 30 for 1 to 20 seconds to be partially exposed. For the partial exposure of the coating 30, a mask having a light-transmitting layer corresponding to the exposed area (LEA) and a light-shielding layer corresponding to the light-shielding area (LBA) can be used. Well-known means such as a high-pressure mercury lamp, a xenon lamp, a carbon arc lamp, a halogen lamp, a cold-cathode tube for copiers, an LED, and a semiconductor laser can be used as an exposure method.
例如，在所述光刻胶组合物为正(positive)型时，在与所述曝光区域(LEA)对应的涂层30中，感光性化合物被活性化，对显影液的溶解度增加。For example, when the photoresist composition is a positive type, in the coating layer 30 corresponding to the exposed area (LEA), the photosensitive compound is activated to increase the solubility of the developer.
参照图5，使所述曝光的涂层30与显影液接触而部分去除涂层30。所述显影液可以使用氢氧化钠、氢氧化钾等碱金属或者碱土金属的氢氧化物；乙胺、正丙胺等一级胺类；二乙胺、二正丙胺等二级胺类；三甲胺、甲基二乙胺、二甲基乙胺等三级胺类；二甲基乙醇胺、甲基二乙醇氨、三乙醇胺等三级醇胺类；吡咯、哌啶、N-甲基哌啶、n-甲基吡咯烷、1,8-二氮杂二环[5,4,0]-7-十一碳烯、1,5-二氮杂二环[4,3,0]-5-壬烯等环状三级胺类；吡啶、紫堇定(Corydine)、二甲基吡啶、喹啉(quinoline)等芳香族三级胺类；四甲基氢氧化铵、四乙基氢氧化铵等四级铵盐的水溶液等。根据一实现例，作为所述显影液可以使用四甲基氢氧化铵水溶液。Referring to FIG. 5, the exposed coating layer 30 is exposed to a developer to partially remove the coating layer 30. Referring to FIG. The developing solution can use hydroxides of alkali metals such as sodium hydroxide and potassium hydroxide or alkaline earth metals; primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; trimethylamine , methyldiethylamine, dimethylethylamine and other tertiary amines; dimethylethanolamine, methyldiethanolamine, triethanolamine and other tertiary alcohol amines; pyrrole, piperidine, N-methylpiperidine, n-methylpyrrolidine, 1,8-diazabicyclo[5,4,0]-7-undecene, 1,5-diazabicyclo[4,3,0]-5- Nonene and other cyclic tertiary amines; pyridine, corydine, lutidine, quinoline and other aromatic tertiary amines; tetramethylammonium hydroxide, tetraethylammonium hydroxide Such as the aqueous solution of quaternary ammonium salt, etc. According to an implementation example, an aqueous solution of tetramethylammonium hydroxide may be used as the developing solution.
在所述光刻胶组合物为正型时，与所述曝光区域(LEA)对应的涂层30被去除，下方的金属层20裸露，残留与所述遮光区域(LBA)对应的涂层30，形成光刻胶图案35。When the photoresist composition is positive, the coating 30 corresponding to the exposed area (LEA) is removed, the underlying metal layer 20 is exposed, and the coating 30 corresponding to the light-shielding area (LBA) remains , forming a photoresist pattern 35 .
参照图6以及图7，将所述光刻胶图案35用作掩膜对所述金属层20进行图案化，形成金属图案25，然后去除所述光刻胶图案35。因此，所述金属图案25具有与所述光刻胶图案35对应的形状。Referring to FIG. 6 and FIG. 7 , the metal layer 20 is patterned by using the photoresist pattern 35 as a mask to form the metal pattern 25 , and then the photoresist pattern 35 is removed. Therefore, the metal pattern 25 has a shape corresponding to the photoresist pattern 35 .
对所述金属层20的图案化，可以通过利用蚀刻液的湿法蚀刻进行，所述蚀刻液的成分可以根据所述金属层20所包含的物质而不同。例如，在所述金属层20包括铜时，所述蚀刻液可以包括磷酸、醋酸、硝酸以及水，还可以包括磷酸盐、醋酸盐、硝酸盐、金属氟化酸等。The patterning of the metal layer 20 can be performed by wet etching using an etchant, and the composition of the etchant can vary depending on the substance contained in the metal layer 20 . For example, when the metal layer 20 includes copper, the etching solution may include phosphoric acid, acetic acid, nitric acid, and water, and may also include phosphate, acetate, nitrate, metal fluoride acid, and the like.
在所述金属层20具有多层结构时，例如，在所述金属层20包括铜层以及位于所述铜层下方的钛层时，所述铜层以及所述钛层可以通过相同的蚀刻液一起蚀刻或者通过分别不同的蚀刻液蚀刻。When the metal layer 20 has a multi-layer structure, for example, when the metal layer 20 includes a copper layer and a titanium layer below the copper layer, the copper layer and the titanium layer can be passed through the same etching solution Etched together or by separate etchant.
另外，在所述金属层20的下方形成有金属氧化物层时，所述金属氧化层可以通过与所述金属层相同的蚀刻液蚀刻，或者通过分别不同的蚀刻液蚀刻。In addition, when a metal oxide layer is formed under the metal layer 20 , the metal oxide layer may be etched with the same etchant as that of the metal layer, or etched with a different etchant.
形成有利用了根据本发明的一实现例的光刻胶组合物的金属图案的基板，可以用作液晶显示装置的显示基板或者有机电致发光装置的显示基板等。A substrate formed with a metal pattern using the photoresist composition according to an implementation example of the present invention can be used as a display substrate of a liquid crystal display device or a display substrate of an organic electroluminescent device.
所述光刻胶组合物包括用所述化学式1表示的噻二唑系化合物，因此与基板之间的粘合力出色，可以形成在蚀刻过程中发生的歪斜(skew)减少的金属图案，所述光刻胶组合物包括所述第一溶剂以及第二溶剂，因此可以形成厚度均匀且图案形状的均匀度出色的金属图案。因此，在薄膜晶体管、信号线等的形成过程中，可以缩短光刻工序的时间，改善工序的可靠性。The photoresist composition includes the thiadiazole-based compound represented by the chemical formula 1, and thus has excellent adhesion to the substrate, and can form a metal pattern with reduced skew occurring during etching, so Since the photoresist composition includes the first solvent and the second solvent, a metal pattern having uniform thickness and excellent pattern shape uniformity can be formed. Therefore, in the process of forming thin film transistors, signal lines, etc., it is possible to shorten the time of the photolithography process and improve the reliability of the process.
以下，列举实施例更加具体地说明根据本发明的一实现例的光刻胶组合物。Hereinafter, examples will be given to describe the photoresist composition according to an implementation example of the present invention in more detail.
〈实施例〉<Example>
制造例1Manufacturing example 1
作为酚醛清漆系树脂将间甲酚与对甲基苯酚以5:5的重量比混合的单体混合物在草酸催化剂下与甲醛进行缩聚反应而得的重均分子量为3,000～30,000g/mol的酚醛清漆系树脂200g、作为二叠氮化物系感光性化合物以3:7的重量比包含2,3,4-三羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯以及2,3,4,4’-四羟基二苯甲酮-1,2-二叠氮基萘醌-5-磺酸酯的混合物48g、以及将作为噻二唑系化合物的3-巯基丙基甲基二甲氧基硅烷1.00g添加到作为第一溶剂的丙二醇甲醚醋酸酯(PGMEA)(沸点：146℃、粘度：1～1.2cP)1598g以及作为第二溶剂的戊二酸二甲酯(沸点：222～224℃、粘度：2～3cP)56g之后进行搅拌，从而制造了光刻胶组合物。As a novolak-based resin, a monomer mixture of m-cresol and p-cresol in a weight ratio of 5:5 is polycondensed with formaldehyde under an oxalic acid catalyst. Phenol with a weight average molecular weight of 3,000 to 30,000 g/mol 200 g of varnish-based resin, 2,3,4-trihydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonic acid in a weight ratio of 3:7 as a diazide-based photosensitive compound 48 g of a mixture of ester and 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate, and 3-mercapto as a thiadiazole compound Add 1.00 g of propylmethyldimethoxysilane to 1,598 g of propylene glycol methyl ether acetate (PGMEA) (boiling point: 146° C., viscosity: 1 to 1.2 cP) as the first solvent and glutaric acid diacetate as the second solvent. After stirring 56 g of methyl ester (boiling point: 222-224 degreeC, viscosity: 2-3 cP), the photoresist composition was manufactured.
制造例2Manufacturing example 2
除了作为第一溶剂用1523g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、作为第二溶剂用131g戊二酸二甲酯替代56g戊二酸二甲酯之外，利用与制造例1相同的方法制造了光刻胶组合物。In addition to replacing 1598 g propylene glycol methyl ether acetate (PGMEA) with 1523 g propylene glycol methyl ether acetate (PGMEA) as the first solvent, and replacing 56 g dimethyl glutarate with 131 g dimethyl glutarate as the second solvent, using A photoresist composition was produced in the same manner as in Production Example 1.
制造例3Manufacturing example 3
除了作为第一溶剂用1448g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、作为第二溶剂用206g戊二酸二甲酯替代56g戊二酸二甲酯之外，利用与制造例1相同的方法制造了光刻胶组合物。In addition to replacing 1598 g propylene glycol methyl ether acetate (PGMEA) with 1448 g propylene glycol methyl ether acetate (PGMEA) as the first solvent, and replacing 56 g dimethyl glutarate with 206 g dimethyl glutarate as the second solvent, using A photoresist composition was produced in the same manner as in Production Example 1.
制造例4Manufacturing example 4
除了作为第一溶剂用1372g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、作为第二溶剂用282g戊二酸二甲酯替代56g戊二酸二甲酯之外，利用与制造例1相同的方法制造了光刻胶组合物。In addition to replacing 1598 g propylene glycol methyl ether acetate (PGMEA) with 1372 g propylene glycol methyl ether acetate (PGMEA) as the first solvent, and replacing 56 g dimethyl glutarate with 282 g dimethyl glutarate as the second solvent, using A photoresist composition was produced in the same manner as in Production Example 1.
制造例5Manufacturing Example 5
除了作为噻二唑系化合物使用0.25g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 0.25 g of 3-mercaptopropylmethyldimethoxysilane was used as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, light was produced in the same manner as in Production Example 1. Resist composition.
制造例6Manufacturing example 6
除了作为噻二唑系化合物使用0.50g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，使用与制造例1相同的方法制造了光刻胶组合物。Except for using 0.50 g of 3-mercaptopropylmethyldimethoxysilane as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, a light was produced in the same manner as in Production Example 1. Resist composition.
制造例7Manufacturing example 7
除了作为噻二唑系化合物使用1.00g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except for using 1.00 g of 3-mercaptopropylmethyldimethoxysilane as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, a light was produced in the same manner as in Production Example 1. Resist composition.
制造例8Manufacturing example 8
除了作为噻二唑系化合物使用1.50g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 1.50 g of 3-mercaptopropylmethyldimethoxysilane was used as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, a light was produced in the same manner as in Production Example 1. Resist composition.
制造例9Manufacturing example 9
除了作为噻二唑系化合物使用2.50g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 2.50 g of 3-mercaptopropylmethyldimethoxysilane was used as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, light was produced in the same manner as in Production Example 1. Resist composition.
制造例10Manufacturing example 10
除了作为噻二唑系化合物使用3.75g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 3.75 g of 3-mercaptopropylmethyldimethoxysilane was used as the thiadiazole-based compound instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane, light was produced in the same manner as in Production Example 1. Resist composition.
比较制造例1Comparative Manufacturing Example 1
除了作为第一溶剂用1654g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、不使用作为第二溶剂的戊二酸二甲酯之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 1598 g of propylene glycol methyl ether acetate (PGMEA) was replaced with 1654 g of propylene glycol methyl ether acetate (PGMEA) as the first solvent, and dimethyl glutarate as the second solvent was not used, the same method as in Production Example 1 was used. A photoresist composition was fabricated.
比较制造例2Comparative Manufacturing Example 2
除了作为第一溶剂使用1523g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、作为第二溶剂用乳酸乙酯(沸点：151～155℃)131g替代戊二酸二甲酯56g之外，利用与制造例1相同的方法制造了光刻胶组合物。In addition to using 1523g of propylene glycol methyl ether acetate (PGMEA) instead of 1598g of propylene glycol methyl ether acetate (PGMEA) as the first solvent, and using 131g of ethyl lactate (boiling point: 151～155°C) as the second solvent to replace dimethyl glutarate Except for 56 g, a photoresist composition was produced by the same method as Production Example 1.
比较制造例3Comparative Manufacturing Example 3
除了作为第一溶剂使用1523g丙二醇甲醚醋酸酯(PGMEA)替代1598g丙二醇甲醚醋酸酯(PGMEA)、作为第二溶剂用乳酸乙酯(沸点：151～155℃)282g替代戊二酸二甲酯56g之外，利用与制造例1相同的方法制造了光刻胶组合物。In addition to using 1523g of propylene glycol methyl ether acetate (PGMEA) as the first solvent instead of 1598g of propylene glycol methyl ether acetate (PGMEA), as the second solvent, 282g of ethyl lactate (boiling point: 151～155°C) was used instead of dimethyl glutarate Except for 56 g, a photoresist composition was produced by the same method as Production Example 1.
比较制造例4Comparative Manufacturing Example 4
除了未使用作为噻二唑系化合物的3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。A resist composition was produced in the same manner as in Production Example 1 except that 3-mercaptopropylmethyldimethoxysilane, which is a thiadiazole-based compound, was not used.
比较制造例5Comparative Manufacturing Example 5
除了作为噻二唑系化合物使用5.00g 3-巯基丙基甲基二甲氧基硅烷替代1.00g3-巯基丙基甲基二甲氧基硅烷之外，利用与制造例1相同的方法制造了光刻胶组合物。Except that 5.00 g of 3-mercaptopropylmethyldimethoxysilane was used instead of 1.00 g of 3-mercaptopropylmethyldimethoxysilane as the thiadiazole-based compound, light was produced in the same manner as in Production Example 1. Resist composition.
实施例1Example 1
在将在所述制造例1中制造的光刻胶组合物狭缝涂布到在上部形成有横400mm×纵300mm大小的铜层的玻璃基板之后，在0.5Torr的压力下减压干燥60秒，并在110℃下加热所述基板150秒，从而形成1.90μm厚度的涂层。After slit-coating the photoresist composition produced in Production Example 1 above on a glass substrate with a copper layer of 400 mm in width x 300 mm in length, it was dried under reduced pressure at a pressure of 0.5 Torr for 60 seconds. , and heated the substrate at 110° C. for 150 seconds to form a coating with a thickness of 1.90 μm.
接着，使用光刻机(MA6,KarlSuss公司制造)向所述涂层照射具有365～436nm的波长的光1秒，从而使所述涂层部分曝光，使所述曝光的涂层与包括四甲基氢氧化铵的水溶液接触约60秒，从而形成了光刻胶图案。Then, use a photolithography machine (MA6, manufactured by KarlSuss) to irradiate the coating with light having a wavelength of 365-436nm for 1 second, thereby partially exposing the coating, so that the exposed coating and the The aqueous ammonium hydroxide solution was contacted for about 60 seconds, thereby forming a photoresist pattern.
实施例2Example 2
除了在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。A photoresist pattern was formed by the same method as in Example 1 except that drying under reduced pressure was performed at a pressure of 1.0 Torr.
实施例3Example 3
除了在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。A photoresist pattern was formed by the same method as in Example 1 except that drying under reduced pressure was performed at a pressure of 1.5 Torr.
实施例4Example 4
除了在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。A photoresist pattern was formed by the same method as in Example 1 except that drying under reduced pressure was performed at a pressure of 3.0 Torr.
实施例5Example 5
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例2中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1 except that the resist composition produced in Production Example 2 was used instead of the resist composition produced in Production Example 1.
实施例6Example 6
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例2中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例7Example 7
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例2中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例8Example 8
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例2中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例9Example 9
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例3中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1 except that the resist composition produced in Production Example 3 was used instead of the resist composition produced in Production Example 1.
实施例10Example 10
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例3中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in Production Example 3 instead of the photoresist composition produced in Production Example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例11Example 11
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例3中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in Production Example 3 instead of the photoresist composition produced in Production Example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例12Example 12
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例3中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in Production Example 3 instead of the photoresist composition produced in Production Example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例13Example 13
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例4中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1 except that the resist composition produced in Production Example 4 was used instead of the resist composition produced in Production Example 1.
实施例14Example 14
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例4中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in Production Example 4 instead of the photoresist composition produced in Production Example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例15Example 15
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例4中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in Production Example 4 instead of the photoresist composition produced in Production Example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例16Example 16
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述制造例4中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the production example 4 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using the same A photoresist pattern was formed by the same method as in Example 1.
实施例17Example 17
在将在所述制造例5中制造的光刻胶组合物狭缝涂布到在上部形成有横400mm×纵300mm大小的铜层的玻璃基板之后，在0.5Torr的压力下减压干燥60秒，并在110℃下加热所述基板150秒，从而形成1.90μm厚度的涂层。After slit-coating the photoresist composition produced in Production Example 5 above on a glass substrate with a copper layer of 400 mm in width x 300 mm in length, it was dried under reduced pressure for 60 seconds under a pressure of 0.5 Torr. , and heated the substrate at 110° C. for 150 seconds to form a coating with a thickness of 1.90 μm.
接着，使用光刻机(MA6,Karl Suss公司制造)向所述涂层照射具有365～436nm的波长的光1秒，从而使所述涂层部分曝光，使所述曝光的涂层与包括四甲基氢氧化铵的水溶液接触约60秒，从而形成了光刻胶图案。Next, use a photolithography machine (MA6, manufactured by Karl Suss) to irradiate the coating with light having a wavelength of 365 to 436 nm for 1 second, thereby partially exposing the coating, so that the exposed coating and the coating including four The aqueous solution of methylammonium hydroxide was contacted for about 60 seconds, thereby forming a photoresist pattern.
接着，用蚀刻液(TCE-J100，DONGJIN SEMICHEM株式会社)蚀刻裸露的铜层而形成了金属图案。Next, the exposed copper layer was etched with an etchant (TCE-J100, Dongjin Semichem Co., Ltd.) to form a metal pattern.
实施例18Example 18
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述制造例6中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了金属图案。A metal pattern was formed by the same method as in Example 17 except that the resist composition produced in Production Example 6 was used instead of the resist composition produced in Production Example 5.
实施例19Example 19
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述制造例7中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 17 except that the resist composition produced in Production Example 7 was used instead of the resist composition produced in Production Example 5.
实施例20Example 20
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述制造例8中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 17, except that the resist composition produced in Production Example 8 was used instead of the resist composition produced in Production Example 5.
实施例21Example 21
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述制造例9中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 17 except that the resist composition produced in Production Example 9 was used instead of the resist composition produced in Production Example 5.
实施例22Example 22
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述制造例10中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了金属图案。A metal pattern was formed by the same method as in Example 17 except that the resist composition produced in Production Example 10 was used instead of the resist composition produced in Production Example 5.
比较例1Comparative example 1
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例1中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1, except that the resist composition produced in Comparative Production Example 1 was used instead of the resist composition produced in Production Example 1. .
比较例2Comparative example 2
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例1中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 1 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例3Comparative example 3
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例1中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 1 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例4Comparative example 4
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例1中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 1 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例5Comparative Example 5
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例2中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1, except that the resist composition produced in Comparative Production Example 2 was used instead of the resist composition produced in Production Example 1. .
比较例6Comparative example 6
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例2中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例7Comparative Example 7
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例2中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例8Comparative Example 8
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例2中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 2 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例9Comparative Example 9
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例3中制造的光刻胶组合物之外，利用与实施例1相同的方法形成了光刻胶图案。A resist pattern was formed by the same method as in Example 1, except that the resist composition produced in Comparative Production Example 3 was used instead of the resist composition produced in Production Example 1. .
比较例10Comparative Example 10
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例3中制造的光刻胶组合物，并在1.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 3 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例11Comparative Example 11
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例3中制造的光刻胶组合物，并在1.5Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 3 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 1.5 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例12Comparative Example 12
除了替代在所述制造例1中制造的光刻胶组合物而使用在所述比较制造例3中制造的光刻胶组合物，并在3.0Torr的压力下进行了减压干燥之外，利用与实施例1相同的方法形成了光刻胶图案。In addition to using the photoresist composition produced in the comparative production example 3 instead of the photoresist composition produced in the production example 1, and drying under reduced pressure at a pressure of 3.0 Torr, using A photoresist pattern was formed in the same manner as in Example 1.
比较例13Comparative Example 13
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述比较制造例4中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了金属图案。A metal pattern was formed by the same method as in Example 17, except that the resist composition produced in Comparative Production Example 4 was used instead of the resist composition produced in Production Example 5.
比较例14Comparative Example 14
除了替代在所述制造例5中制造的光刻胶组合物而使用在所述比较制造例5中制造的光刻胶组合物之外，利用与实施例17相同的方法形成了金属图案。A metal pattern was formed by the same method as in Example 17, except that the resist composition produced in Comparative Production Example 5 was used instead of the resist composition produced in Production Example 5.
评价例1：光刻胶图案的锥度角(taper angle)以及CD大小测定Evaluation example 1: Measurement of taper angle and CD size of photoresist pattern
使用扫描电子显微镜测定在实施例1～16以及比较例1～12中制造的光刻胶图案的锥度角以及CD大小。其结果显示在表1中。The taper angles and CD sizes of the resist patterns produced in Examples 1 to 16 and Comparative Examples 1 to 12 were measured using a scanning electron microscope. The results are shown in Table 1.
其中，锥度角是测量在被蚀刻的金属膜的侧面观察的倾斜的值，CD大小是测量光刻胶膜末端与铜膜末端之间的距离的值。Here, the taper angle is a value measuring the inclination viewed from the side of the etched metal film, and the CD size is a value measuring the distance between the end of the photoresist film and the end of the copper film.
【表1】【Table 1】
参照表1可知，在实施例1～4中制造的光刻胶图案、实施例5～8中制造的光刻胶图案、实施例9～12中制造的光刻胶图案以及实施例13～16中制造的光刻胶图案与分别在比较例1～4中制造的光刻胶图案、比较例5～8中制造的光刻胶图案以及比较例9～12中制造的光刻胶图案相比，相对于减压干燥时的压力变化，锥度角以及CD大小的变化较小，因此光刻胶图案形状的均匀度较出色。Referring to Table 1, it can be seen that the photoresist patterns manufactured in Examples 1-4, the photoresist patterns manufactured in Examples 5-8, the photoresist patterns manufactured in Examples 9-12, and the photoresist patterns manufactured in Examples 13-16 Compared with the photoresist patterns manufactured in Comparative Examples 1 to 4, the photoresist patterns manufactured in Comparative Examples 5 to 8, and the photoresist patterns manufactured in Comparative Examples 9 to 12, respectively , Compared with pressure changes during reduced-pressure drying, changes in taper angle and CD size are small, so the uniformity of the photoresist pattern shape is excellent.
评价例2：金属图案的蚀刻歪斜测定Evaluation example 2: Measurement of etching skew of metal pattern
分别利用扫描电子显微镜测定在实施例17～22、比较例13以及14中制造的金属图案的蚀刻歪斜。其结果显示在以下表2中。The etching distortions of the metal patterns produced in Examples 17 to 22 and Comparative Examples 13 and 14 were measured with a scanning electron microscope, respectively. The results thereof are shown in Table 2 below.
【表2】【Table 2】
**由于蚀刻歪斜过大，无法通过SEM分析测定。**Cannot be determined by SEM analysis due to excessive etch skew.
通过所述表2可知，在实施例17～22中制造的金属图案与在比较例13以及14中制造的金属图案相比蚀刻歪斜较小，因此对基板的粘合力较出色。As can be seen from Table 2, the metal patterns produced in Examples 17 to 22 have less etching distortion than the metal patterns produced in Comparative Examples 13 and 14, and therefore have excellent adhesion to the substrate.
以上参照附图以及实施例对根据本发明的优选实现例进行了说明，但这仅仅是示意性的说明，本发明技术领域的普通技术人员应该能够理解通过以上所述可以导出各种变形以及等同的其他实现例。因此，本发明的保护范围应该由所附权利要求书进行限定。The preferred implementation examples according to the present invention have been described above with reference to the accompanying drawings and embodiments, but this is only a schematic illustration. Those of ordinary skill in the technical field of the present invention should be able to understand that various modifications and equivalents can be derived from the above. Other implementation examples of . Therefore, the protection scope of the present invention should be defined by the appended claims.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577089A (en) * | 2003-07-16 | 2005-02-09 | 住友化学工业株式会社 | Tinted photosensitive resin composition |
| CN101526738A (en) * | 2008-03-04 | 2009-09-09 | 东进世美肯株式会社 | Photoresist composition and method for making array base plate using the same |
| CN102549497A (en) * | 2009-09-10 | 2012-07-04 | 东丽株式会社 | Photosensitive resin composition and method for producing photosensitive resin film |
| CN102597876A (en) * | 2009-11-10 | 2012-07-18 | 索尼化学&信息部件株式会社 | Quinonediazide photosensitizer solution and positive-type resist composition |
| JP2014162818A (en) * | 2013-02-22 | 2014-09-08 | Toray Ind Inc | Heat-resistant resin composition, and method for producing heat-resistant resin film |
| CN104781731A (en) * | 2012-12-04 | 2015-07-15 | Az电子材料卢森堡有限公司 | Positive working photosensitive material |
| KR20150097578A (en) * | 2012-12-20 | 2015-08-26 | 도레이 카부시키가이샤 | Photosensitive resin composition, method for producing heat-resistant resin film and display device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4308585B2 (en) * | 2003-06-09 | 2009-08-05 | Ａｚエレクトロニックマテリアルズ株式会社 | Photosensitive resin composition adhesion improver and photosensitive resin composition containing the same |
| WO2009139335A1 (en) * | 2008-05-13 | 2009-11-19 | 旭化成イーマテリアルズ株式会社 | Photosensitive resin composition |
| JP4245077B1 (en) * | 2008-08-01 | 2009-03-25 | 住友ベークライト株式会社 | Photosensitive resin composition, cured film, protective film, insulating film, and semiconductor device using the same. |
| JP5637043B2 (en) * | 2011-03-30 | 2014-12-10 | 日本ゼオン株式会社 | Photosensitive resin composition |
| JP2013088711A (en) * | 2011-10-20 | 2013-05-13 | Nippon Zeon Co Ltd | Photosensitive resin composition |
| CN109298601A (en) * | 2012-09-18 | 2019-02-01 | 旭化成株式会社 | Photosensitive resin composition |
| JP2016018691A (en) * | 2014-07-09 | 2016-02-01 | Jsr株式会社 | Display or illumination device |
-
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-
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577089A (en) * | 2003-07-16 | 2005-02-09 | 住友化学工业株式会社 | Tinted photosensitive resin composition |
| CN101526738A (en) * | 2008-03-04 | 2009-09-09 | 东进世美肯株式会社 | Photoresist composition and method for making array base plate using the same |
| CN102549497A (en) * | 2009-09-10 | 2012-07-04 | 东丽株式会社 | Photosensitive resin composition and method for producing photosensitive resin film |
| CN102597876A (en) * | 2009-11-10 | 2012-07-18 | 索尼化学&信息部件株式会社 | Quinonediazide photosensitizer solution and positive-type resist composition |
| CN104781731A (en) * | 2012-12-04 | 2015-07-15 | Az电子材料卢森堡有限公司 | Positive working photosensitive material |
| KR20150097578A (en) * | 2012-12-20 | 2015-08-26 | 도레이 카부시키가이샤 | Photosensitive resin composition, method for producing heat-resistant resin film and display device |
| JP2014162818A (en) * | 2013-02-22 | 2014-09-08 | Toray Ind Inc | Heat-resistant resin composition, and method for producing heat-resistant resin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114479020A (en) * | 2022-02-22 | 2022-05-13 | 中国科学院化学研究所 | Polymer semiconductor photoresist with side chain containing azide group, and preparation method and application thereof |
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