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CN107723796B - A kind of method for growing strontium molybdate crystal - Google Patents

A kind of method for growing strontium molybdate crystal Download PDF

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CN107723796B
CN107723796B CN201710991667.6A CN201710991667A CN107723796B CN 107723796 B CN107723796 B CN 107723796B CN 201710991667 A CN201710991667 A CN 201710991667A CN 107723796 B CN107723796 B CN 107723796B
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srmoo
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CN107723796A (en
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李凌云
王国强
于岩
潘坚福
杨志锋
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Fuzhou University
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/32Titanates; Germanates; Molybdates; Tungstates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12Salt solvents, e.g. flux growth
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors

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Abstract

The present invention provides a kind of for growing SrMoO4Crystal or active ions adulterate SrMoO4The method of crystal is prepared using top seed crystal flux growth metrhod, and fluxing agent used is Na 2MoO4+B2O3Or K2MoO4+B2O3Composite fluxing agent.In composite fluxing agent system, Na2MoO4Or K2MoO4With B2O3Molar ratio be 4:1, active ions Tm3+、Ho3+、Yb3+、Er3+Or Pr3+.Preparation SrMoO of the present invention4Crystal technology method, can be by SrMoO4The growth temperature of crystal reduces, while the volatility of melt system during the growth process, the growing environment of stable crystal can also be effectively reduced.

Description

A method of for growing molybdic acid strontium crystal
Technical field
The contents of the present invention are a kind of for growing SrMoO4Crystal or active ions adulterate SrMoO4The side of crystal Method is related to technical field of optoelectronic functional materials, more particularly, to preparing a kind of work that can be used as solid optically functional device The artificial lens technical field of medium.
Background technique
Molybdate crystal due to having high density, good thermostabilization and irradiation stability, ideal flashing efficiency, Make they photo-luminescent devices, solid-state laser, optical fiber, in terms of application it is more.
Alkali earth molybdates ReMoO4(Re=Mg, Sr) is a kind of important optical crystal matrix.SrMoO4It is the system In important a member, it belongs to tetragonal crystal system, space group I41/ a, cell parameter are as follows: a=5.3897, c=12.0209 , z=4.In the crystal, Sr atom is eight-coordinate, and Mo atom is four-coordination.Every 6 SrO8Polyhedron is by sharing Sr-O Polyhedral a line and form a Sr6O42Group connects each other together, SrMoO4Crystalline framework can regard this as A little Sr6O42The cage structure that group is formed by connecting by way of sharing oxygen atom, MoO4Tetrahedron is filled in these caged The gap of structure.
SrMoO4For congruent melting compound, melt temperature is 1460 DEG C.The crystal can be prepared by czochralski method, Researcher is prepared for SrMoO using czochralski method4And it is doped with Tm3+、Ho3+、Yb3+、Er3+And Pr3+Equal active ions SrMoO4Crystal.Meanwhile Chinese patent CN200810070582.5, CN200810070576.X, CN200810070568.5 points Preparation doping Nd is not disclosed3+、Yb3+And Tm3+The SrMoO of ion4The preparation method of monocrystalline, what they were used is all czochralski method. The melting point compound is higher, and the MoO in raw material3Saturated vapor pressure is lower, volatile so as to cause raw material deviation at high temperature Standard stoichiometry ratio, so the SrMoO usually come out using Czochralski grown4Monocrystalline optical quality is to be improved.Therefore, existing Some preparation SrMoO4There are the solutions of following two problems demand in the method for monocrystalline: 1, growth temperature is high;2, melt is in high temperature Lower volatilization is serious.To solve above-mentioned two problems, Chinese patent CN200710009975.0 discloses a kind of improved czochralski method For growing SrMoO4Monocrystalline.In the improved czochralski method, author introduces NaMoO4As fluxing agent, by SrMoO4Monocrystalline Growth temperature is reduced to 1200 DEG C.But the growth temperature of the crystal is not still effectively reduced in this improved czochralski method, NaMoO simultaneously4Addition there is no Essential Action to melt system volatility at high temperature is reduced.
Utilize K2MoO4SrMoO can be prepared as fluxing agent4Monocrystalline uses K2MoO4As fluxing agent and control its Content in melt can also reduce SrMoO4The growth temperature of monocrystalline.But in whole system all it is in the molten state molybdenum Hydrochlorate, the volatility of system are still very serious.
Summary of the invention
To solve SrMoO4The growth temperature height and melt faced in the existing preparation method of monocrystalline volatilizees seriously at high temperature The problem of, the invention adopts the following technical scheme:
One kind is for growing SrMoO4The preparation method of crystal, which uses top seed crystal flux growth metrhod preparation, used Fluxing agent is Na 2MoO4+B2O3Or K2MoO4+B2O3Composite fluxing agent.In above two composite fluxing agent system, Na2MoO4 Or K2MoO4With B2O3Ratio be 4:1(molar ratio).When with SrMoO4-Na2MoO4-B2O3System grows SrMoO4Crystal When, solute SrMoO4Concentration be 25%-10%(molar ratio), crystal growth temperature section is 990 DEG C -880 DEG C, and rate of temperature fall is 0.5-5 DEG C/day, brilliant rotational speed rate is 5-60rpm;When with SrMoO4-K2MoO4-B2O3System grows SrMoO4When crystal, solute SrMoO4Concentration be 25%-10%(molar ratio), crystal growth temperature section be 1050 DEG C -850 DEG C, rate of temperature fall 0.5-5 DEG C/day, brilliant rotational speed rate are 5-60rpm;
The SrMoO prepared using the technical method4Crystal, crystal parameters are as follows: tetragonal crystal system, space group For I41/ a, cell parameter are as follows: a=5.3897, c=12.0209, z=4;
SrMoO is prepared using the technical method4When crystal, it can according to need and adulterate active ions thereto, such as Tm3+、 Ho3+、Yb3+、Er3+And Pr3+Ion etc., the Sr in these active ions replacement lattices2+, to prepare active ions doping SrMoO4Crystal, wherein the doping of active ions is 1-10 at.%;
In above-mentioned technical method, SrMoO4Raw material be SrCO3And MoO3, K2MoO4Raw material be K2CO3And MoO3, Na2MoO4Raw material be Na2CO3And MoO3, B2O3Then derive from H3BO3.At high temperature, above-mentioned raw materials are according to following chemical equation Formula is reacted:
Na2CO3+MoO3= Na2MoO4+CO2
K2CO3+MoO3= K2MoO4+CO2
SrCO3+MoO3=SrMoO4 +CO2
2H3BO3=3H2O↑+B2O3
In the above preparation method, B2O3Introducing be necessary. B2O3Introducing can effectively improve melt system Viscosity reduces the volatilization of melt system and entire melt is made to become thoroughly bright, is very beneficial for the molten of stable crystal growth Body environment.In order to illustrate B2O3Introducing be able to suppress the volatility of melt system, we devise one group of comparative test: we Choose SrMoO4-Na2MoO4-B2O3And SrMoO4-Na2MoO4System carries out thermogravimetric analysis, and raw materials used is AR grades of SrCO3、 Na2CO3、MoO3And H3BO3, the model SDT Q600 V8.2 Build 100 of thermogravimetric analyzer.SrMoO4-Na2MoO4-B2O3 System according to three 1:1:1 molar ratio ingredient 15mg, SrMoO4-Na2MoO4System according to the two 1:1 molar ratio ingredient 15mg.It tests two systems and rises to the variation of 900 DEG C of system gross masses with the raised relationship of temperature, heating rate 10 from room temperature DEG C/minute, 100 minutes are kept the temperature at 900 DEG C.Test result is as depicted in figs. 1 and 2.
As shown in Figure 1, two fluxing agent systems are before 500 DEG C with the H in raw material2O、H3BO3、SrCO3And Na2CO3 Participation physical-chemical reaction decompose, the quality of system will appear several places and die-offs or reduce in ladder shape.Specifically, SrMoO4-Na2MoO4Have in system raw material and holds evaporable H2The O and SrCO for being easy reaction decomposition3And Na2CO3, in temperature-rise period In have following variation: from room temperature to 71 DEG C, since the evaporation system TG of water has dropped to 96% from 100%;From 71 DEG C to 330 DEG C, Due to Na2CO3With MoO3It reacts, generates CO2, along with dehydration is continued, system TG is down to 84%;It is warming up to from 482 DEG C 490 DEG C, due to SrCO3With MoO3It reacts, generates CO2, system gross mass accounts for material quality and becomes 82.8% from 83%.
And the SrMoO before 500 DEG C4-Na2MoO4-B2O3System is from 71 DEG C to 330 DEG C in addition to there is Na2CO3With MoO3It reacts and generates CO2Except, there are also H3BO3The process of dehydration.Two individuals tie up to gross mass base between 500 DEG C to 800 DEG C Originally it remains unchanged.After 800 DEG C, as the temperature rises, SrMoO4-Na2MoO4-B2O3Gross mass it is nearly constant constant, and SrMoO4-Na2MoO4The gross mass of system is then also decreasing.
Fig. 2 is SrMoO4-Na2MoO4-B2O3And SrMoO4-Na2MoO4The thermogravimetric of holding stage after system is warming up to 900 DEG C Analysis, constant in system is SrMoO in 900 DEG C of holdings 100 minutes4-Na2MoO4-B2O3System gross mass is down to by 100% 98.6%, and SrMoO4-Na2MoO4System gross mass is down to 97.4% by 100%, due to B2O3Presence and reduce system melt Volatilization.The results show of Fig. 1 and Fig. 2, B2O3Apparent inhibiting effect can be played to the volatility of system.
By SrMoO4Crystal or the SrMoO of active ions doping4The Solid-state Optics device system that crystal is used to prepare, The Solid-state Optics device system can be used for particle detection, laser device, spectroscopy device, biomedicine or military field.
Beneficial effects of the present invention
Preparation SrMoO of the present invention4Crystal technology method, can be by SrMoO4The growth temperature of crystal reduces, together When the volatility of melt system during the growth process, the growing environment of stable crystal can also be effectively reduced.
Detailed description of the invention
Fig. 1 is SrMoO4-Na2MoO4-B2O3And SrMoO4-Na2MoO4System temperature rise period thermogravimetric map;
Fig. 2 is SrMoO4-Na2MoO4-B2O3And SrMoO4-Na2MoO4The heat of holding stage after system is warming up to 900 DEG C Multigraph spectrum;
Fig. 3 is the resulting SrMoO of embodiment 14Monocrystalline;
Fig. 4 is the resulting SrMoO of embodiment 24Monocrystalline;
Fig. 5 is the resulting Tm of embodiment 33+:SrMoO4Monocrystalline;
Fig. 6 is embodiment 1,2 resulting SrMoO4Monocrystalline and the resulting Tm of embodiment 33+:SrMoO4The XRD spectrum of monocrystalline;
Fig. 7 is 3 gained Tm of embodiment3+:SrMoO4Room temperature absorption spectrum;
Fig. 8 is 3 gained Tm of embodiment3+:SrMoO4Crystal Room temperature PL spectrum.
Specific embodiment
The present invention is further illustrated by the following examples, but protection scope of the present invention is not limited to following reality Apply example
Embodiment 1:
According to SrMoO4-Na 2MoO4-B2O3=1:4:1(molar ratio), system gross weight is 150 grams of specification after melting, weigh MoO3、SrCO3、Na2CO3And H3BO3Equal raw materials, the purity of above-mentioned raw materials are that analysis is pure.Platinum is put into after raw material is fully ground Golden crucible is placed in molten salt furnace, is warming up to powder fine melt, and keeps the temperature 24 hours after fine melt, and a platinum wire is wrapped in corundum seed The top of crystalline style is used as seed crystal, is then slowly drop down to ullage until contacting with liquid level.It quickly cools the temperature to molten Or more after cooled down 7 days with the speed of 5 DEG C/d again, then lift seed rod, room temperature be annealed to the rate of 20 DEG C/h, is obtained SrMoO4Polycrystalline cuts out the preferable seed crystal of quality in polycrystalline, and remaining polycrystal material is put into crucible and melts recycling. In the second wheel crystal growing process, the saturation point of system is first found, is 985 DEG C.In the temperature by seed crystal immersed in liquid level hereinafter, The rate of temperature fall of crystal growth be 1 DEG C/for 24 hours, brilliant rotational speed rate be 30rpm, growth time be 30 days, annealing rate be 15 DEG C/h 800 DEG C are down to, 20 DEG C/h is down to 600 DEG C, and 40 DEG C/h is down to 400 DEG C, is then quickly down to room temperature.With this growth technique, we are obtained The more excellent SrMoO of quality is arrived4Monocrystalline.
Embodiment 2:
According to SrMoO4- K2MoO4-B2O3=1:4:1(molar ratio), system gross weight is 180 grams of specification after melting, weigh MoO3、SrCO3、K2CO3And H3BO3Equal raw materials, the purity of above-mentioned raw materials are that analysis is pure.Platinum is put into after raw material is fully ground Crucible is placed in molten salt furnace, is warming up to powder fine melt, and keeps the temperature 24 hours after fine melt, and a platinum wire is wrapped in corundum seed crystal The top of bar is used as seed crystal, is then slowly drop down to ullage until contacting with liquid level.Quickly cool the temperature to fusing point Cooled down 3 days with the speed of 5 DEG C/d again after above, then lifts seed rod, room temperature is annealed to the rate of 10 DEG C/h, is obtained SrMoO4Polycrystalline cuts out the preferable seed crystal of quality in polycrystalline, and remaining polycrystal material is put into crucible and melts recycling. In the second wheel crystal growing process, the saturation point of system is first found, is 948 DEG C.In the temperature by seed crystal immersed in liquid level hereinafter, The rate of temperature fall of crystal growth be 2 DEG C/for 24 hours, brilliant rotational speed rate be 20rpm, growth time be 10 days, annealing rate be 15 DEG C/h It is down to room temperature.With the more excellent SrMoO of the available quality of this growth technique4Monocrystalline.
Embodiment 3:
According to SrMoO4-Na2MoO4-B2O3=1:4:1(molar ratio), Tm3+Account for SrMoO4Amount be 10at.%, system melt Gross weight is 200 grams of specification later, and weighs raw material according to following reaction formula:
(1-x) SrCO3+(x/3)Tm2O3+ MoO3=Sr1-xTm2x/3MoO4+(1-x)CO2
Wherein, Tm2O3Purity be 99/99%.Using seed crystal obtained in embodiment 1, in 985 DEG C of (saturations of the system Point) when by seed crystal immersed in liquid level hereinafter, and according to rate of temperature fall be 1 DEG C/for 24 hours, brilliant rotational speed rate be 30rpm technique, by 30 The second best in quality Tm can be obtained in it growth cycle3+Ion doping SrMoO4(Tm3+:SrMoO4) monocrystalline.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered It is considered as protection scope of the present invention.

Claims (4)

1.一种用于生长SrMoO4 晶体的方法,其特征在于,采用顶部籽晶助熔剂法制备SrMoO4晶体,所用助熔剂为Na2MoO4+B2O3或K2MoO4+B2O3的复合助熔剂;在上述两种复合助熔剂体系中,Na2MoO4或K2MoO4与B2O3的摩尔比为4:1;当用SrMoO4-Na2MoO4-B2O3体系来生长SrMoO4 晶体时,溶质SrMoO4的摩尔百分比为25%-10%,晶体生长温度区间为990℃-880℃,降温速率为0.5-5℃/天,晶转速率为5-60rpm;当用SrMoO4-K2MoO4-B2O3体系来生长SrMoO4 晶体时,溶质SrMoO4的摩尔百分比为25%-10%,晶体生长温度区间为1050℃-850℃,降温速率为0.5-5℃/天,晶转速率为5-60rpm。1. a method for growing SrMoO 4 crystal, is characterized in that, adopts top seed crystal flux method to prepare SrMoO 4 crystal, and used flux is Na 2 MoO 4 +B 2 O 3 or K 2 MoO 4 +B 2 O 3 composite flux; in the above two composite flux systems, the molar ratio of Na 2 MoO 4 or K 2 MoO 4 to B 2 O 3 is 4:1; when using SrMoO 4 -Na 2 MoO 4 -B 2 O 3 system to grow SrMoO 4 crystal, the mole percentage of solute SrMoO 4 is 25%-10%, the crystal growth temperature range is 990℃-880℃, the cooling rate is 0.5-5℃/day, and the crystal rotation rate is 5 -60rpm; when using the SrMoO 4 -K 2 MoO 4 -B 2 O 3 system to grow SrMoO 4 crystals, the mole percentage of solute SrMoO 4 is 25%-10%, the crystal growth temperature range is 1050 ℃ -850 ℃, cooling The rate is 0.5-5°C/day, and the crystal rotation rate is 5-60rpm. 2.根据权利要求1所述的一种用于生长SrMoO4 晶体的方法,其特征在于,SrMoO4的原料为SrCO3和MoO3,K2MoO4的原料为K2CO3和MoO3,Na2MoO4的原料为Na2CO3和MoO3,B2O3来源于H3BO32. a kind of method for growing SrMoO 4 crystal according to claim 1 is characterized in that, the raw material of SrMoO 4 is SrCO 3 and MoO 3 , the raw material of K 2 MoO 4 is K 2 CO 3 and MoO 3 , The raw materials of Na 2 MoO 4 are Na 2 CO 3 and MoO 3 , and B 2 O 3 comes from H 3 BO 3 . 3.一种用于生长激活离子掺杂的SrMoO4 晶体的方法,其特征在于,采用顶部籽晶助熔剂法制备激活离子掺杂的SrMoO4 晶体,所述激活离子的掺杂量为1-10 at.%,所述激活离子为Tm3+、Ho3+、Yb3+、Er3+或Pr3+,所用助熔剂为Na 2MoO4+B2O3或K2MoO4+B2O3的复合助熔剂;在上述两种复合助熔剂体系中,Na 2MoO4或K2MoO4与B2O3的摩尔比为4:1;当用激活离子-SrMoO4-Na2MoO4-B2O3体系来生长激活离子掺杂的SrMoO4 晶体时,溶质SrMoO4与Na 2MoO4+B2O3的摩尔比为1:3-9,晶体生长温度区间为990℃-880℃,降温速率为0.5-5℃/天,晶转速率为5-60rpm;当用激活离子-SrMoO4-K2MoO4-B2O3体系来生长激活离子掺杂的SrMoO4 晶体时,溶质SrMoO4与K2MoO4+B2O3的摩尔比为1:3-9,晶体生长温度区间为1050℃-850℃,降温速率为0.5-5℃/天,晶转速率为5-60rpm。3. A method for growing an activated ion-doped SrMoO 4 crystal, characterized in that, a top seed crystal flux method is used to prepare an activated ion-doped SrMoO 4 crystal, and the doping amount of the activated ion is 1- 10 at.%, the activated ions are Tm 3+ , Ho 3+ , Yb 3+ , Er 3+ or Pr 3+ , the flux used is Na 2 MoO 4 +B 2 O 3 or K 2 MoO 4 +B 2 O 3 composite flux; in the above two composite flux systems, the molar ratio of Na 2 MoO 4 or K 2 MoO 4 to B 2 O 3 is 4:1; when activated ion-SrMoO 4 -Na 2 is used The molar ratio of solute SrMoO 4 to Na 2 MoO 4 + B 2 O 3 is 1 : 3-9 , and the crystal growth temperature range is 990℃. -880 ℃, the cooling rate is 0.5-5 ℃/ day , and the crystal rotation rate is 5-60rpm ; , the molar ratio of solute SrMoO 4 to K 2 MoO 4 +B 2 O 3 is 1:3-9, the crystal growth temperature range is 1050℃-850℃, the cooling rate is 0.5-5℃/day, and the crystal rotation rate is 5-60rpm. 4.根据权利要求3所述的一种用于生长激活离子掺杂的SrMoO4 晶体的方法,其特征在于,SrMoO4的原料为SrCO3和MoO3,K2MoO4的原料为K2CO3和MoO3,Na2MoO4的原料为Na2CO3和MoO3,B2O3来源于H3BO3,激活离子来源于其氧化物。4. a kind of method for growing activated ion-doped SrMoO 4 crystal according to claim 3, is characterized in that, the raw material of SrMoO 4 is SrCO 3 and MoO 3 , the raw material of K 2 MoO 4 is K 2 CO 3 and MoO 3 , the raw materials of Na 2 MoO 4 are Na 2 CO 3 and MoO 3 , B 2 O 3 comes from H 3 BO 3 , and the active ions come from its oxides.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101457398A (en) * 2007-12-11 2009-06-17 中国科学院福建物质结构研究所 Ytterbium sodium ion double doped strontium molybdate laser crystal and preparation method thereof
CN101498045A (en) * 2008-01-31 2009-08-05 中国科学院福建物质结构研究所 Ytterbium strontium molybdate doped tunable laser crystal
CN102851029A (en) * 2012-06-30 2013-01-02 四川师范大学 Na4-3xEux(WO4)2-y(MoO4)y series fluorescent microcrystals and preparation method of chemical solution thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101457398A (en) * 2007-12-11 2009-06-17 中国科学院福建物质结构研究所 Ytterbium sodium ion double doped strontium molybdate laser crystal and preparation method thereof
CN101498045A (en) * 2008-01-31 2009-08-05 中国科学院福建物质结构研究所 Ytterbium strontium molybdate doped tunable laser crystal
CN102851029A (en) * 2012-06-30 2013-01-02 四川师范大学 Na4-3xEux(WO4)2-y(MoO4)y series fluorescent microcrystals and preparation method of chemical solution thereof

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