CN107715815A - A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary - Google Patents
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title abstract description 14
- 239000012530 fluid Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims description 143
- 238000005192 partition Methods 0.000 claims description 27
- 229920005591 polysilicon Polymers 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 2
- 239000007790 solid phase Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Abstract
Description
技术领域technical field
本发明涉及粒状多晶硅生产领域，尤其涉及一种声波辅助的粒状多晶硅流化床生产装置。The invention relates to the field of granular polysilicon production, in particular to a sound wave-assisted granular polysilicon fluidized bed production device.
背景技术Background technique
多晶硅（polycrystalline silicon），单质硅的一种形态。高温熔融状态下，具有较大的化学活泼性，能与几乎任何材料作用。具有半导体性质，是极为重要的优良半导体材料。多晶硅又是生产单晶硅的直接原料，是当代人工智能、自动控制、信息处理、光电转换等半导体器件的电子信息基础材料，被称为“微电子大厦的基石”。多晶硅的生产技术主要为改良西门子法和流化床法。西门子法通过气相沉积的方式生产柱状多晶硅，为了提高原料利用率和环境友好，在前者的基础上采用了闭环式生产工艺即改良西门子法。流化床法是将硅烷通入以多晶硅晶种作为流化颗粒的流化床中，使硅烷裂解并在晶种上沉积，从而得到颗粒状多晶硅。历史上两种技术却几乎是同时起步，西门子法凭借着纯度优势脱颖而出，在20世纪60年代取得统治地位，目前流化床法颗粒硅的市场份额（约15%左右）远小于西门子法。在光伏产业这个庞大的的应用市场没有开启之前，成本之于多晶硅的生产没有那么敏感，因而埋没了流化床法低能耗的优势，发展流化床法生产颗粒状多晶硅具能有效降低生产成本。Polycrystalline silicon (polycrystalline silicon), a form of elemental silicon. In the high-temperature molten state, it has great chemical activity and can interact with almost any material. It has semiconductor properties and is an extremely important excellent semiconductor material. Polysilicon is the direct raw material for the production of monocrystalline silicon. It is the basic electronic information material for semiconductor devices such as artificial intelligence, automatic control, information processing, and photoelectric conversion. It is called "the cornerstone of the microelectronics building." Polysilicon production technologies are mainly improved Siemens method and fluidized bed method. The Siemens method produces columnar polysilicon by vapor deposition. In order to improve the utilization rate of raw materials and be environmentally friendly, a closed-loop production process, namely the improved Siemens method, is adopted on the basis of the former. The fluidized bed method is to pass silane into a fluidized bed with polysilicon seeds as fluidized particles, so that silane is cracked and deposited on the seeds to obtain granular polysilicon. In history, the two technologies started almost at the same time. The Siemens method stood out by virtue of its purity advantage and gained a dominant position in the 1960s. At present, the market share of fluidized bed granular silicon (about 15%) is much smaller than that of the Siemens method. Before the huge application market of the photovoltaic industry was opened, the cost was not so sensitive to the production of polysilicon, so the advantages of low energy consumption of the fluidized bed method were buried. The development of the fluidized bed method to produce granular polysilicon can effectively reduce production costs. .
流化床法生产颗粒状多晶硅是利用经过精馏提纯或吸附处理的高纯反应气体SiH4或SiHCl3，与流化气体H2，从流化床反应器底部或侧方气体进口通入，高纯硅粉（晶种）从反应器顶部进入反应器内。反应气体在合适的气速下，可将粒径为0.01～1 mm的硅粉吹扫呈现出流化状态。与此同时，在反应器外部加热器的作用下，反应器内部维持在恒定温度，高纯硅粉表面发生化学气相沉积现象，高纯硅粉逐渐生长至直径为0.2~3.0 mm的近似球形颗粒。流化床法生产颗粒状多晶硅存在三个技术不利：1、硅烷的均相分解形成的微小无定形硅颗粒易被吹走，造成损失；2、硅烷的异相沉积（气相沉积，简称CVD）也可能发生在流化床的器壁上，造成物料损失；3、颗粒状硅烷与流化床壁面的摩擦引入金属杂质，降低颗粒硅的纯度。The production of granular polysilicon by the fluidized bed method is to use the high-purity reaction gas SiH4 or SiHCl3 after rectification purification or adsorption treatment, and the fluidization gas H2 to enter from the bottom or side gas inlet of the fluidized bed reactor, and the high-purity silicon The powder (seed) enters the reactor from the top of the reactor. The reaction gas can sweep the silicon powder with a particle size of 0.01 to 1 mm at a suitable gas velocity and present a fluidized state. At the same time, under the action of the external heater of the reactor, the inside of the reactor is maintained at a constant temperature, and chemical vapor deposition occurs on the surface of the high-purity silicon powder, and the high-purity silicon powder gradually grows into approximately spherical particles with a diameter of 0.2-3.0 mm . There are three technical disadvantages in the production of granular polysilicon by the fluidized bed method: 1. The tiny amorphous silicon particles formed by the homogeneous decomposition of silane are easily blown away, causing losses; 2. The heterogeneous deposition of silane (vapor phase deposition, CVD for short) It may also occur on the wall of the fluidized bed, causing material loss; 3. The friction between granular silane and the wall of the fluidized bed introduces metal impurities and reduces the purity of granular silicon.
声波（Sound Wave 或 Acoustic Wave）是声音的传播形式，声波是一种机械波，由物体振动产生。声波在气体中的传播能够引起气体的振动，对于气体中的固体颗粒，由于惯性的作用大颗粒往往不会随着气体振动而保持在原来的位置，小颗粒惯性小随着气体震动。气体和颗粒、大颗粒和小颗粒的这种不同步振动强化颗粒与气体之间的传质。Sound wave (Sound Wave or Acoustic Wave) is the propagation form of sound, and sound wave is a kind of mechanical wave, which is produced by the vibration of objects. The propagation of sound waves in the gas can cause the vibration of the gas. For the solid particles in the gas, due to the effect of inertia, the large particles will not always stay in the original position with the vibration of the gas, and the small particles will vibrate with the gas due to the small inertia. This asynchronous vibration of gas and particles, large and small particles, enhances the mass transfer between particles and gas.
发明内容Contents of the invention
本发明为解决上述技术现状而提供一种声波辅助的粒状多晶硅流化床生产装置，将声波装置引入到粒状多晶硅流化床生产装置，利用声波的强化颗粒与气体传质的特性从而强化粒状多晶硅的生产减小均相分解的不利影响。本发明解决上述技术问题所采用的技术方案为一种声波辅助的粒状多晶硅流化床生产装置，其特征在于所述的生产装置由声波发生器1、流化床外壁3、锥形圆环面4、内套筒5、圆环气体均布器6、圆环隔断面7、锥形圆环气体均布器8、出料管9、同心套管10和加热器12构成；所述的流化床外壁3由上圆锥封头31、圆筒壁32和下圆锥封头33组成；所述上圆锥封头31的侧面设置有晶种进口管2和废气排出口14；所述圆筒壁32通过锥形圆环面4与内套筒5的上端连接、通过圆环气体均布器6与内套筒5的中间连接、通过圆环隔断面7与内套筒5的下端连接；所述锥形圆环面4、内套筒5、圆筒壁32和圆环气体均布器6围成了第一气体缓冲腔；所述圆环隔断面7、内套筒5、圆筒壁32和圆环气体均布器6围成了第二气体缓冲腔；所述第二气体进口13设置在圆筒壁32上并与第一气体缓冲腔连通；所述加热器12设置在第二气体缓冲腔的内部；所述的锥形圆环气体均布器8的外边沿与圆环隔断面7的内边沿连接，气体均布器8的出料口82与出料管9的一端连接，所述出料管9穿过下圆锥封头；所述圆环隔断面7、锥形圆环气体均布器8、出料管9和下圆锥封头33围成了第三气体缓冲腔；所述第一氢气进口11设置在下圆锥封头33上并与第三气体缓冲腔连通；所述同心套管10穿过出料管9并深入到生产装置的内部。The present invention provides an acoustic-assisted granular polysilicon fluidized bed production device to solve the above-mentioned technical situation. The acoustic wave device is introduced into the granular polysilicon fluidized bed production device, and the granular polysilicon is strengthened by using the characteristics of the sound wave to strengthen particle and gas mass transfer. The production reduces the adverse effects of homogeneous decomposition. The technical solution adopted by the present invention to solve the above-mentioned technical problems is a sound wave-assisted granular polysilicon fluidized bed production device, which is characterized in that the production device consists of a sound wave generator 1, a fluidized bed outer wall 3, a conical torus 4. The inner sleeve 5, the annular gas distributor 6, the annular partition surface 7, the conical annular gas distributor 8, the discharge pipe 9, the concentric sleeve 10 and the heater 12; The outer wall 3 of the chemical bed is composed of an upper conical head 31, a cylindrical wall 32 and a lower conical head 33; the side of the upper conical head 31 is provided with a seed crystal inlet pipe 2 and an exhaust gas outlet 14; the cylindrical wall 32 is connected to the upper end of the inner sleeve 5 through the tapered annular surface 4, connected to the middle of the inner sleeve 5 through the annular gas distributor 6, and connected to the lower end of the inner sleeve 5 through the annular partition surface 7; The conical annular surface 4, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 enclose the first gas buffer chamber; the annular partition surface 7, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 surround the second gas buffer chamber; the second gas inlet 13 is arranged on the cylindrical wall 32 and communicates with the first gas buffer chamber; the heater 12 is arranged on the second The inside of the gas buffer chamber; the outer edge of the conical annular gas distributor 8 is connected to the inner edge of the annular partition surface 7, and the outlet 82 of the gas distributor 8 is connected to one end of the outlet pipe 9 , the discharge pipe 9 passes through the lower conical head; the annular partition surface 7, the conical annular gas distributor 8, the discharge pipe 9 and the lower conical head 33 enclose a third gas buffer chamber ; The first hydrogen inlet 11 is set on the lower conical head 33 and communicates with the third gas buffer chamber; the concentric sleeve 10 passes through the discharge pipe 9 and goes deep into the interior of the production device.
作为改进，所述的同心套管10的中心轴与出料管9的中心轴重合，且同心套管10的外径小于出料管9的内径10~50 mm。As an improvement, the central axis of the concentric sleeve 10 coincides with the central axis of the discharge pipe 9 , and the outer diameter of the concentric sleeve 10 is 10-50 mm smaller than the inner diameter of the discharge pipe 9 .
作为改进，所述的内套筒5上开有直径为1~3 mm的气孔51，内套筒5的开孔率为5~10%。As an improvement, the inner sleeve 5 is provided with air holes 51 with a diameter of 1-3 mm, and the opening ratio of the inner sleeve 5 is 5-10%.
作为改进，所述的圆环气体均布器6上开有直径为0.5~2 mm的气孔61，圆环气体均布器6的开孔率为10~15%。As an improvement, the air hole 61 with a diameter of 0.5-2 mm is opened on the circular gas distributor 6, and the opening rate of the circular gas distributor 6 is 10-15%.
进一步改进，所述的锥形圆环气体均布器8上开有直径为2~5 mm的气孔81，锥形圆环气体均布器8的开孔率为10~18%。As a further improvement, the conical circular gas distributor 8 is provided with pores 81 with a diameter of 2-5 mm, and the opening ratio of the conical circular gas distributor 8 is 10-18%.
再改进，所述的气孔51的中心轴与内套筒5的中心轴相交形成交角ɑ，ɑ的角度值为10~45度。Further improvement, the central axis of the air hole 51 intersects with the central axis of the inner sleeve 5 to form an angle α, and the value of the angle α is 10-45 degrees.
与现有技术相比，本发明的优点在于：利用声波发生器生产的声波强化流化床内气、固相的传质，从而加快气相沉积速度，有利于加快生产速度、减少均相分解的物料损失；在内套筒上开孔，在内套筒内壁上形成气垫，防止了硅在器壁表面的沉积，减少维护时间和物料损失。Compared with the prior art, the present invention has the advantages of: utilizing the sound waves produced by the sonic generator to strengthen the mass transfer of gas and solid phases in the fluidized bed, thereby speeding up the gas phase deposition speed, which is conducive to speeding up the production speed and reducing the risk of homogeneous decomposition. Material loss: Holes are opened on the inner sleeve to form an air cushion on the inner wall of the inner sleeve, which prevents the deposition of silicon on the surface of the wall and reduces maintenance time and material loss.
附图说明Description of drawings
图1是本发明的一种声波辅助的粒状多晶硅流化床生产装置的结构示意图。Fig. 1 is a structural schematic diagram of a sonic-assisted granular polysilicon fluidized bed production device of the present invention.
图2是本发明的内套筒的结构示意图。Fig. 2 is a structural schematic diagram of the inner sleeve of the present invention.
图3是本发明的圆环气体均布器的结构示意图。Fig. 3 is a schematic structural view of the annular gas distributor of the present invention.
图4是本发明的锥形圆环气体均布器的俯视结构示意图。Fig. 4 is a top structural schematic view of the conical circular gas distributor of the present invention.
图5是本发明的锥形圆环气体均布器的正视结构示意图。Fig. 5 is a front structural schematic view of the conical circular gas distributor of the present invention.
其中：1为声波发生器，2为晶种进口管，3为流化床外壁，4为锥形圆环面，5为内套筒，6为圆环气体均布器，7为圆环隔断面，8为锥形圆环气体均布器，9为同心套管，10为第一氢气进口，11为加热器，12为第二氢气进口，13为废气排出口，31为上圆锥封头，32为圆筒壁，33为下圆锥封头，51为气孔，61为气孔，81为气孔，82为出料口。Among them: 1 is the acoustic wave generator, 2 is the inlet pipe of the crystal seed, 3 is the outer wall of the fluidized bed, 4 is the conical ring surface, 5 is the inner sleeve, 6 is the ring gas distributor, 7 is the ring partition 8 is a conical ring gas distributor, 9 is a concentric sleeve, 10 is the first hydrogen inlet, 11 is the heater, 12 is the second hydrogen inlet, 13 is the exhaust gas outlet, and 31 is the upper conical head , 32 is a cylinder wall, 33 is a lower conical head, 51 is an air hole, 61 is an air hole, 81 is an air hole, and 82 is a discharge port.
具体实施方式Detailed ways
以下结合附图1、附图2、附图3，附图4和附图5，通过实施例对本发明作进一步详细描述。Below in conjunction with accompanying drawing 1, accompanying drawing 2, accompanying drawing 3, accompanying drawing 4 and accompanying drawing 5, the present invention is described in further detail through embodiment.
实施例1Example 1
一种声波辅助的粒状多晶硅流化床生产装置由声波发生器1、流化床外壁3、锥形圆环面4、内套筒5、圆环气体均布器6、圆环隔断面7、锥形圆环气体均布器8、出料管9、同心套管10和加热器12构成；流化床外壁3由上圆锥封头31、圆筒壁32和下圆锥封头33组成；圆锥封头31的侧面设置有晶种进口管2和废气排出口14；圆筒壁32通过锥形圆环面4与内套筒5的上端连接、通过圆环气体均布器6与内套筒5的中间连接、通过圆环隔断面7与内套筒5的下端连接；锥形圆环面4、内套筒5、圆筒壁32和圆环气体均布器6围成了第一气体缓冲腔；圆环隔断面7、内套筒5、圆筒壁32和圆环气体均布器6围成了第二气体缓冲腔；第二气体进口13设置在圆筒壁32上并与第一气体缓冲腔连通；所述加热器12设置在第二气体缓冲腔的内部；锥形圆环气体均布器8的外边沿与圆环隔断面7的内边沿连接，气体均布器8的出料口82与出料管9的一端连接，出料管9穿过下圆锥封头；所述圆环隔断面7、锥形圆环气体均布器8、出料管9和下圆锥封头33围成了第三气体缓冲腔；述第一氢气进口11设置在下圆锥封头33上并与第三气体缓冲腔连通；同心套管10穿过出料管9并深入到生产装置的内部。同心套管10的中心轴与出料管9的中心轴重合，且同心套管10的外径小于出料管9的内径10 mm。内套筒5上开有直径为3 mm的气孔51，内套筒5的开孔率为5%。圆环气体均布器6上开有直径为0.5 mm的气孔61，圆环气体均布器6的开孔率为15%。锥形圆环气体均布器8上开有直径为5mm的气孔81，锥形圆环气体均布器8的开孔率为10%。气孔51的中心轴与内套筒5的中心轴相交形成交角ɑ，ɑ的角度值为10度。An acoustic-assisted granular polycrystalline silicon fluidized bed production device consists of an acoustic wave generator 1, an outer wall of a fluidized bed 3, a conical annular surface 4, an inner sleeve 5, an annular gas distributor 6, an annular partition surface 7, Conical annular gas distributor 8, discharge pipe 9, concentric casing 10 and heater 12; fluidized bed outer wall 3 is composed of upper conical head 31, cylindrical wall 32 and lower conical head 33; conical The side of the head 31 is provided with a seed inlet pipe 2 and an exhaust gas outlet 14; the cylindrical wall 32 is connected to the upper end of the inner sleeve 5 through the conical annular surface 4, and connected to the inner sleeve through the annular gas distributor 6. The middle connection of 5 is connected to the lower end of the inner sleeve 5 through the annular partition surface 7; the conical annular surface 4, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 enclose the first gas Buffer chamber; the ring partition surface 7, the inner sleeve 5, the cylinder wall 32 and the ring gas uniform distributor 6 enclose the second gas buffer chamber; the second gas inlet 13 is arranged on the cylinder wall 32 and connected with the first A gas buffer chamber communicates; the heater 12 is arranged inside the second gas buffer chamber; the outer edge of the conical annular gas distributor 8 is connected to the inner edge of the annular partition surface 7, and the gas distributor 8 The discharge port 82 is connected to one end of the discharge pipe 9, and the discharge pipe 9 passes through the lower conical head; The head 33 surrounds the third gas buffer chamber; the first hydrogen inlet 11 is arranged on the lower conical head 33 and communicates with the third gas buffer chamber; the concentric sleeve 10 passes through the discharge pipe 9 and penetrates into the interior of the production device . The central axis of the concentric sleeve 10 coincides with the central axis of the discharge pipe 9, and the outer diameter of the concentric sleeve 10 is 10 mm smaller than the inner diameter of the discharge pipe 9. An air hole 51 with a diameter of 3 mm is opened on the inner sleeve 5, and the opening ratio of the inner sleeve 5 is 5%. The gas hole 61 with a diameter of 0.5 mm is opened on the circular gas distributor 6, and the opening ratio of the circular gas distributor 6 is 15%. The gas hole 81 with a diameter of 5mm is opened on the conical circular gas distributor 8, and the opening rate of the conical circular gas distributor 8 is 10%. The central axis of the air hole 51 intersects with the central axis of the inner sleeve 5 to form an angle α, and the value of the angle α is 10 degrees.
实施例2Example 2
一种声波辅助的粒状多晶硅流化床生产装置由声波发生器1、流化床外壁3、锥形圆环面4、内套筒5、圆环气体均布器6、圆环隔断面7、锥形圆环气体均布器8、出料管9、同心套管10和加热器12构成；流化床外壁3由上圆锥封头31、圆筒壁32和下圆锥封头33组成；圆锥封头31的侧面设置有晶种进口管2和废气排出口14；圆筒壁32通过锥形圆环面4与内套筒5的上端连接、通过圆环气体均布器6与内套筒5的中间连接、通过圆环隔断面7与内套筒5的下端连接；锥形圆环面4、内套筒5、圆筒壁32和圆环气体均布器6围成了第一气体缓冲腔；圆环隔断面7、内套筒5、圆筒壁32和圆环气体均布器6围成了第二气体缓冲腔；第二气体进口13设置在圆筒壁32上并与第一气体缓冲腔连通；所述加热器12设置在第二气体缓冲腔的内部；锥形圆环气体均布器8的外边沿与圆环隔断面7的内边沿连接，气体均布器8的出料口82与出料管9的一端连接，出料管9穿过下圆锥封头；所述圆环隔断面7、锥形圆环气体均布器8、出料管9和下圆锥封头33围成了第三气体缓冲腔；述第一氢气进口11设置在下圆锥封头33上并与第三气体缓冲腔连通；同心套管10穿过出料管9并深入到生产装置的内部。同心套管10的中心轴与出料管9的中心轴重合，且同心套管10的外径小于出料管9的内径50 mm。内套筒5上开有直径为2 mm的气孔51，内套筒5的开孔率为10%。圆环气体均布器6上开有直径为2 mm的气孔61，圆环气体均布器6的开孔率为10%。锥形圆环气体均布器8上开有直径为2mm的气孔81，锥形圆环气体均布器8的开孔率为18%。气孔51的中心轴与内套筒5的中心轴相交形成交角ɑ，ɑ的角度值为45度。An acoustic-assisted granular polycrystalline silicon fluidized bed production device consists of an acoustic wave generator 1, an outer wall of a fluidized bed 3, a conical annular surface 4, an inner sleeve 5, an annular gas distributor 6, an annular partition surface 7, Conical annular gas distributor 8, discharge pipe 9, concentric casing 10 and heater 12; fluidized bed outer wall 3 is composed of upper conical head 31, cylindrical wall 32 and lower conical head 33; conical The side of the head 31 is provided with a seed inlet pipe 2 and an exhaust gas outlet 14; the cylindrical wall 32 is connected to the upper end of the inner sleeve 5 through the conical annular surface 4, and connected to the inner sleeve through the annular gas distributor 6. The middle connection of 5 is connected to the lower end of the inner sleeve 5 through the annular partition surface 7; the conical annular surface 4, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 enclose the first gas Buffer chamber; the ring partition surface 7, the inner sleeve 5, the cylinder wall 32 and the ring gas uniform distributor 6 enclose the second gas buffer chamber; the second gas inlet 13 is arranged on the cylinder wall 32 and connected with the first A gas buffer chamber communicates; the heater 12 is arranged inside the second gas buffer chamber; the outer edge of the conical annular gas distributor 8 is connected to the inner edge of the annular partition surface 7, and the gas distributor 8 The discharge port 82 is connected to one end of the discharge pipe 9, and the discharge pipe 9 passes through the lower conical head; The head 33 surrounds the third gas buffer chamber; the first hydrogen inlet 11 is arranged on the lower conical head 33 and communicates with the third gas buffer chamber; the concentric sleeve 10 passes through the discharge pipe 9 and penetrates into the interior of the production device . The central axis of the concentric sleeve 10 coincides with the central axis of the discharge pipe 9, and the outer diameter of the concentric sleeve 10 is 50 mm smaller than the inner diameter of the discharge pipe 9. An air hole 51 with a diameter of 2 mm is opened on the inner sleeve 5, and the opening ratio of the inner sleeve 5 is 10%. The gas hole 61 with a diameter of 2 mm is opened on the circular gas distributor 6, and the opening rate of the circular gas distributor 6 is 10%. The gas hole 81 with a diameter of 2mm is opened on the conical circular gas distributor 8, and the opening rate of the conical circular gas distributor 8 is 18%. The central axis of the air hole 51 intersects with the central axis of the inner sleeve 5 to form an angle α, and the value of the angle α is 45 degrees.
实施例3Example 3
一种声波辅助的粒状多晶硅流化床生产装置由声波发生器1、流化床外壁3、锥形圆环面4、内套筒5、圆环气体均布器6、圆环隔断面7、锥形圆环气体均布器8、出料管9、同心套管10和加热器12构成；流化床外壁3由上圆锥封头31、圆筒壁32和下圆锥封头33组成；圆锥封头31的侧面设置有晶种进口管2和废气排出口14；圆筒壁32通过锥形圆环面4与内套筒5的上端连接、通过圆环气体均布器6与内套筒5的中间连接、通过圆环隔断面7与内套筒5的下端连接；锥形圆环面4、内套筒5、圆筒壁32和圆环气体均布器6围成了第一气体缓冲腔；圆环隔断面7、内套筒5、圆筒壁32和圆环气体均布器6围成了第二气体缓冲腔；第二气体进口13设置在圆筒壁32上并与第一气体缓冲腔连通；所述加热器12设置在第二气体缓冲腔的内部；锥形圆环气体均布器8的外边沿与圆环隔断面7的内边沿连接，气体均布器8的出料口82与出料管9的一端连接，出料管9穿过下圆锥封头；所述圆环隔断面7、锥形圆环气体均布器8、出料管9和下圆锥封头33围成了第三气体缓冲腔；述第一氢气进口11设置在下圆锥封头33上并与第三气体缓冲腔连通；同心套管10穿过出料管9并深入到生产装置的内部。同心套管10的中心轴与出料管9的中心轴重合，且同心套管10的外径小于出料管9的内径25 mm。内套筒5上开有直径为1 mm的气孔51，内套筒5的开孔率为8%。圆环气体均布器6上开有直径为1 mm的气孔61，圆环气体均布器6的开孔率为12%。锥形圆环气体均布器8上开有直径为4 mm的气孔81，锥形圆环气体均布器8的开孔率为13%。气孔51的中心轴与内套筒5的中心轴相交形成交角ɑ，ɑ的角度值为15度。An acoustic-assisted granular polycrystalline silicon fluidized bed production device consists of an acoustic wave generator 1, an outer wall of a fluidized bed 3, a conical annular surface 4, an inner sleeve 5, an annular gas distributor 6, an annular partition surface 7, Conical annular gas distributor 8, discharge pipe 9, concentric casing 10 and heater 12; fluidized bed outer wall 3 is composed of upper conical head 31, cylindrical wall 32 and lower conical head 33; conical The side of the head 31 is provided with a seed inlet pipe 2 and an exhaust gas outlet 14; the cylindrical wall 32 is connected to the upper end of the inner sleeve 5 through the conical annular surface 4, and connected to the inner sleeve through the annular gas distributor 6. The middle connection of 5 is connected to the lower end of the inner sleeve 5 through the annular partition surface 7; the conical annular surface 4, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 enclose the first gas Buffer chamber; the ring partition surface 7, the inner sleeve 5, the cylinder wall 32 and the ring gas uniform distributor 6 enclose the second gas buffer chamber; the second gas inlet 13 is arranged on the cylinder wall 32 and connected with the first A gas buffer chamber communicates; the heater 12 is arranged inside the second gas buffer chamber; the outer edge of the conical annular gas distributor 8 is connected to the inner edge of the annular partition surface 7, and the gas distributor 8 The discharge port 82 is connected to one end of the discharge pipe 9, and the discharge pipe 9 passes through the lower conical head; The head 33 surrounds the third gas buffer chamber; the first hydrogen inlet 11 is arranged on the lower conical head 33 and communicates with the third gas buffer chamber; the concentric sleeve 10 passes through the discharge pipe 9 and penetrates into the interior of the production device . The central axis of the concentric sleeve 10 coincides with the central axis of the discharge pipe 9, and the outer diameter of the concentric sleeve 10 is 25 mm smaller than the inner diameter of the discharge pipe 9. An air hole 51 with a diameter of 1 mm is opened on the inner sleeve 5, and the opening ratio of the inner sleeve 5 is 8%. The gas hole 61 with a diameter of 1 mm is opened on the circular gas distributor 6, and the opening ratio of the circular gas distributor 6 is 12%. The gas hole 81 with a diameter of 4 mm is opened on the conical circular gas distributor 8, and the opening ratio of the conical circular gas distributor 8 is 13%. The central axis of the air hole 51 intersects with the central axis of the inner sleeve 5 to form an angle α, and the value of the angle α is 15 degrees.
实施例4Example 4
一种声波辅助的粒状多晶硅流化床生产装置由声波发生器1、流化床外壁3、锥形圆环面4、内套筒5、圆环气体均布器6、圆环隔断面7、锥形圆环气体均布器8、出料管9、同心套管10和加热器12构成；流化床外壁3由上圆锥封头31、圆筒壁32和下圆锥封头33组成；圆锥封头31的侧面设置有晶种进口管2和废气排出口14；圆筒壁32通过锥形圆环面4与内套筒5的上端连接、通过圆环气体均布器6与内套筒5的中间连接、通过圆环隔断面7与内套筒5的下端连接；锥形圆环面4、内套筒5、圆筒壁32和圆环气体均布器6围成了第一气体缓冲腔；圆环隔断面7、内套筒5、圆筒壁32和圆环气体均布器6围成了第二气体缓冲腔；第二气体进口13设置在圆筒壁32上并与第一气体缓冲腔连通；所述加热器12设置在第二气体缓冲腔的内部；锥形圆环气体均布器8的外边沿与圆环隔断面7的内边沿连接，气体均布器8的出料口82与出料管9的一端连接，出料管9穿过下圆锥封头；所述圆环隔断面7、锥形圆环气体均布器8、出料管9和下圆锥封头33围成了第三气体缓冲腔；述第一氢气进口11设置在下圆锥封头33上并与第三气体缓冲腔连通；同心套管10穿过出料管9并深入到生产装置的内部。同心套管10的中心轴与出料管9的中心轴重合，且同心套管10的外径小于出料管9的内径40 mm。内套筒5上开有直径为2 mm的气孔51，内套筒5的开孔率为6%。圆环气体均布器6上开有直径为1.5 mm的气孔61，圆环气体均布器6的开孔率为14%。锥形圆环气体均布器8上开有直径为3mm的气孔81，锥形圆环气体均布器8的开孔率为15%。气孔51的中心轴与内套筒5的中心轴相交形成交角ɑ，ɑ的角度值为35度。An acoustic-assisted granular polycrystalline silicon fluidized bed production device consists of an acoustic wave generator 1, an outer wall of a fluidized bed 3, a conical annular surface 4, an inner sleeve 5, an annular gas distributor 6, an annular partition surface 7, Conical annular gas distributor 8, discharge pipe 9, concentric casing 10 and heater 12; fluidized bed outer wall 3 is composed of upper conical head 31, cylindrical wall 32 and lower conical head 33; conical The side of the head 31 is provided with a seed inlet pipe 2 and an exhaust gas outlet 14; the cylindrical wall 32 is connected to the upper end of the inner sleeve 5 through the conical annular surface 4, and connected to the inner sleeve through the annular gas distributor 6. The middle connection of 5 is connected to the lower end of the inner sleeve 5 through the annular partition surface 7; the conical annular surface 4, the inner sleeve 5, the cylinder wall 32 and the annular gas distributor 6 enclose the first gas Buffer chamber; the ring partition surface 7, the inner sleeve 5, the cylinder wall 32 and the ring gas uniform distributor 6 enclose the second gas buffer chamber; the second gas inlet 13 is arranged on the cylinder wall 32 and connected with the first A gas buffer chamber communicates; the heater 12 is arranged inside the second gas buffer chamber; the outer edge of the conical annular gas distributor 8 is connected to the inner edge of the annular partition surface 7, and the gas distributor 8 The discharge port 82 is connected to one end of the discharge pipe 9, and the discharge pipe 9 passes through the lower conical head; The head 33 surrounds the third gas buffer chamber; the first hydrogen inlet 11 is arranged on the lower conical head 33 and communicates with the third gas buffer chamber; the concentric sleeve 10 passes through the discharge pipe 9 and penetrates into the interior of the production device . The central axis of the concentric sleeve 10 coincides with the central axis of the discharge pipe 9, and the outer diameter of the concentric sleeve 10 is 40 mm smaller than the inner diameter of the discharge pipe 9. An air hole 51 with a diameter of 2 mm is opened on the inner sleeve 5, and the opening ratio of the inner sleeve 5 is 6%. There are air holes 61 with a diameter of 1.5 mm on the circular gas distributor 6, and the opening rate of the circular gas distributor 6 is 14%. The gas hole 81 with a diameter of 3mm is opened on the conical circular gas distributor 8, and the opening rate of the conical circular gas distributor 8 is 15%. The central axis of the air hole 51 intersects with the central axis of the inner sleeve 5 to form an angle α, and the value of the angle α is 35 degrees.
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