CN107706136A - A kind of method for packing of semiconductor chip - Google Patents
A kind of method for packing of semiconductor chip Download PDFInfo
- Publication number
- CN107706136A CN107706136A CN201710963974.3A CN201710963974A CN107706136A CN 107706136 A CN107706136 A CN 107706136A CN 201710963974 A CN201710963974 A CN 201710963974A CN 107706136 A CN107706136 A CN 107706136A
- Authority
- CN
- China
- Prior art keywords
- support
- semiconductor chip
- conducting sphere
- insulating materials
- sensitive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000012856 packing Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000011810 insulating material Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 claims abstract description 15
- 238000009413 insulation Methods 0.000 claims abstract description 3
- 238000005538 encapsulation Methods 0.000 claims description 7
- 229920000297 Rayon Polymers 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- -1 acrylic nitrile Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Packaging Frangible Articles (AREA)
Abstract
Disclose a kind of method for packing of semiconductor chip, packaging mechanism includes chip carrier, chip carrier includes egative film, egative film is provided with semiconductor chip, the upper surface of semiconductor chip is coated with insulating materials, the inside of insulating materials is provided with conducting sphere, conducting sphere is coated with thermo-sensitive material, packaging mechanism is provided with and pushes support, push support and be provided with heating sheet, thermo-sensitive material can be heated and melt thermo-sensitive material by heating sheet, in the presence of longitudinal pressure, the upper and lower ends of conducting sphere contact with pushing heating sheet on support and semiconductor chip respectively, other unheated conducting spheres keep insulation.
Description
Technical field
The present invention relates to the field of semiconductor packages, more particularly, be related to it is a kind of be not required to welding just can be efficiently succinct
The method being packaged to semiconductor chip.
Background technology
Chip package mechanism be by chip package on a chip packaging carrying plate to protect the device of chip.Fig. 1 is existing
The encapsulation schematic diagram of technology, traditional semiconductor chip are had pad structure, are packaged by the way of welding, such a operation
Mode is not only relative complex, and caused heat and waste gas etc. can also affect to operator in welding process.
Metal lead wire is also associated with traditional conducting sphere, wiring is time-consuming, and efficiency is low, or even understands loose contact and make entirely to fill
Put and scrap.
The content of the invention
Therefore it provides the example of the present invention is to substantially solve caused by the limitation of association area and shortcoming one
Or more problem, omit welding process, be effectively simplified encapsulation flow.
According to technical scheme provided by the invention, described packaging mechanism includes chip carrier, described chip carrier bag
First egative film is included, one or more layers second egative film is provided with the first described egative film, the second described egative film is provided with
Semiconductor chip, the upper surface of described semiconductor chip are coated with least one layer of insulating materials, described insulating materials it is interior
Portion is provided with least individual conducting sphere, and described each conducting sphere is coated with the thermo-sensitive material that one or more layers surface is in smooth shape,
Support is pushed provided with first above the left side of described packaging mechanism, is pushed above the right side of described packaging mechanism provided with second
Support, described first push support and/or described second push support lower section side be provided with one or two heating it is thin
Piece, for described heating sheet with described conducting sphere in mapping corresponding relation, described heating sheet can be by described temperature-sensitive
Material is heated and melts described thermo-sensitive material, in the presence of longitudinal pressure, the upper and lower ends point of described conducting sphere
Do not contacted with the described heating sheet pushed on support and semiconductor chip, other unheated described conducting spheres keep exhausted
Edge.
Further, described first push support and/or described second push internal stent be provided with it is described plus
The heater that hot thin slice is connected.
Further, the heater is provided with regulation to the shifting switch of two temperature.
Further, described insulating materials is in viscose glue shape, and described insulating materials is by acrylic nitrile derivates and/or polyamides
Imine derivative forms.
Further, described thermo-sensitive material surface is smooth, is made by lapping mode.
Preferably, described thermo-sensitive material is temperature-sensitive epoxy resin, thickness 10nm-60nm.
In addition, the first described egative film is pmma substrate, unorganic glass substrate, high polymer material substrate and/or glass
Glass Fiber prepreg.
In addition, the second described egative film is made up of aluminium oxide ceramics, its firing temperature is 1679.3 DEG C -1989.2 DEG C, thoroughly
A length of 2.23-5.82 μm of ejected wave.
According to the present invention, in the hollow poroid of array inside described insulating materials, described conducting sphere is as hollow hole
In.
Further, described first push support and push the contact that support 7 is included in first area with described second
Part and the support section in second area, described first area and described second area are perpendicular to one another.
In addition, described first pushes the contact portion of support and described second and pushes shape between the contact portion of support
Into space.
According to the present invention, described semiconductor chip is provided with electrical contact, and conducting sphere contacts with described electrical contact.
The present invention replaces metal wire and insulating barrier by using the insulating cement containing conducting sphere, omits welding process, eliminates
The fatigue failure of traditional handicraft, low manufacture cost, substantially increase overall fastness and the reliability of connection.
Brief description of the drawings
Fig. 1 is traditional chip package structural scheme of mechanism.
Fig. 2 is the chip package structural scheme of mechanism of the present invention.
Fig. 3 is the encapsulation schematic flow sheet of the present invention.
Embodiment
With reference to specific embodiment, the invention will be further described.
Below with reference to embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure, method or the function that one of ordinary skill in the art is made according to these embodiments
On conversion be all contained in protection scope of the present invention.
Therefore it provides the example of the present invention is to substantially solve caused by the limitation of association area and shortcoming one
Or more problem, omit welding process, be effectively simplified encapsulation flow.
Referring to the drawings 2 and 3, described packaging mechanism includes chip carrier, and described chip carrier includes first bottom
Piece 1, is provided with one or more layers second egative film 2 on the first described egative film 1, and the second described egative film 2 is provided with semiconductor core
Piece 3, it is characterised in that the upper surface of described semiconductor chip 3 is coated with least one layer of insulating materials 4, described insulation material
The inside of material 4 is provided with least five conducting sphere 5, and described each conducting sphere 5 is coated with one or more layers surface in smooth shape
Thermo-sensitive material, the left side top of described packaging mechanism push support 6 provided with first, set above the right side of described packaging mechanism
There is second to push support 7, described first pushes support 6 and/or the described second lower section side for pushing support 7 is provided with one
Or two heating sheets 7, described heating sheet 7 is with described conducting sphere 5 in mapping corresponding relation, described heating sheet 7
Described thermo-sensitive material can be heated and melt described thermo-sensitive material, in the presence of longitudinal pressure, described leads
The upper and lower ends of electric ball 5 are contacted with the described heating sheet 7 pushed on support and semiconductor chip 3 respectively, and other are not heated
Described conducting sphere 5 keep insulation.
Described first pushes support 6 and/or described second pushes the inside of support 7 and be provided with and described heating sheet 7
The heater being connected（Not shown in figure）, the heater, which is provided with, to be adjusted to the shifting switch of different temperatures（In figure
It is not shown）, described heater temperature can adjust, and highest stable can will be heated to 1200 DEG C.
Described insulating materials is in viscose glue shape, and described insulating materials is derived by acrylic nitrile derivates and/or polyimides
Thing forms.
Described thermo-sensitive material is temperature-sensitive epoxy resin, thickness 10nm-60nm.
The first described egative film 1 is pmma substrate, unorganic glass substrate, high polymer material substrate and/or glass fibers
Tie up prepreg cloth.
The second described egative film 2 is made up of aluminium oxide ceramics, and its firing temperature is 1679.3 DEG C -1989.2 DEG C, transmitted wave
A length of 2.23-5.82 μm.
In the hollow poroid of array inside described insulating materials, described conducting sphere 5 is as in hollow hole.
Described first push support 6 and described second push support 7 be included in first area contact portion and
The support section of second area, described first area and described second area are perpendicular to one another.
Described first pushes the contact portion of support 6 and described second and pushes and formed between the contact portion of support 7
Space.
Described semiconductor chip 3 is provided with electrical contact, and conducting sphere 5 contacts with described electrical contact.
Described longitudinal pressure can be artificial force, can also be by Mechanical course.
Fig. 3 shows the encapsulation flow of the present invention, and referring to the drawings 3, the encapsulation process is as follows：The first step, in the first egative film 1
With fix semiconductor chip 3 on the second egative film 2, second step, the insulating cement containing conducting sphere 5 is coated in the upper surface of semiconductor chip 3,
3rd step, first is pushed in the presence of longitudinal pressure pushes support 6 and second and push support 7, the 4th step, opens the first gear shift
Switch, the 5th step, is preheated to conducting sphere 5, and the first shifting switch is disconnected after 4 seconds, the 6th step, the second gear shift is opened and opens
Close, the 7th step, conducting sphere 5 is heated, the second shifting switch is disconnected after 4 seconds, the 8th step is cooled to normal temperature, and the 9th step is right
Whole mechanism carries out plastic packaging, by framework and semiconductor chip integration.
For those skilled in the art, it is clear that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and do not carrying on the back
In the case of spirit or essential attributes from the present invention, the present invention can be realized in other specific forms.Therefore, no matter from which
From the point of view of a bit, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention will by appended right
Ask rather than described above limits, it is intended that all changes in the implication and scope of the equivalency of claim will be fallen
Include in the present invention.Any reference in claim should not be considered as to the involved claim of limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only those skilled in the art for clarity
Should
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms art technology
The other embodiment that personnel are appreciated that.
Claims (6)
1. a kind of method for packing of the semiconductor chip based on the packaging mechanism with temperature-sensitive insulating materials, described packaging mechanism
Including chip carrier, described chip carrier includes the first egative film 1 and the second egative film 2, and the second described egative film 2 is provided with and partly led
Body chip 3, the upper surface of described semiconductor chip 3 are coated with least one layer of insulating materials 4, described insulating materials 4 it is interior
Portion is provided with least five conducting sphere 5, and described each conducting sphere 5 is coated with one or more layers thermo-sensitive material, described temperature-sensitive material
Expect that surface is smooth, be made by lapping mode, the top of described packaging mechanism pushes support 6 and second provided with first and pushes support
7, described first pushes support 6 and/or the described second lower section side for pushing support 7 is provided with one or two heating sheet
7, described thermo-sensitive material can be heated and melt described thermo-sensitive material, described conduction by described heating sheet 7
The upper and lower ends subregion of ball 5 can contact with the described heating sheet 7 pushed on support and semiconductor chip 3 respectively,
Other unheated described conducting spheres 5 keep insulation, and described first pushes support 6 and/or described second push support 7
Inside is provided with the heater that is connected with described heating sheet 7, and the heater is provided with regulation to two temperature
Shifting switch, it is characterised in that encapsulation process is as follows：The first step, semiconductor core is fixed on the first egative film 1 and the second egative film 2
Piece 3, second step, the insulating cement containing conducting sphere 5, the 3rd step, in the presence of longitudinal pressure are coated in the upper surface of semiconductor chip 3
Push first and push support 6 and second and push support 7, the 4th step, open the first shifting switch, the 5th step, conducting sphere 5 is carried out
Preheating, the first shifting switch is disconnected after 4 seconds, the 6th step, the second shifting switch is opened, the 7th step, conducting sphere 5 is added
Heat, the second shifting switch is disconnected after 4 seconds, the 8th step, normal temperature is cooled to, the 9th step, plastic packaging is carried out to whole mechanism, by framework
With semiconductor chip integration.
2. a kind of packaging mechanism with temperature-sensitive insulating materials according to claim 2, described insulating materials are in viscose glue
Shape, described thermo-sensitive material are temperature-sensitive epoxy resin.
3. a kind of method for packing of semiconductor chip according to claim 1, described insulating materials inside is in array
Hollow poroid, described conducting sphere 5 is as in hollow hole.
4. a kind of method for packing of semiconductor chip according to claim 1-3 any one, described first pushes branch
Frame 6 and described second pushes support 7 and is included in the contact portion of first area and the support section in second area, described
First area and described second area are perpendicular to one another.
5. a kind of method for packing of semiconductor chip according to claim 1, described first pushes the contact site of support 6
Point and described second push and form space between the contact portion of support 7.
6. a kind of method for packing of semiconductor chip according to claim 1, described semiconductor chip 3 is provided with electrical
Contact, conducting sphere 5 contact with described electrical contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710963974.3A CN107706136A (en) | 2017-10-16 | 2017-10-16 | A kind of method for packing of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710963974.3A CN107706136A (en) | 2017-10-16 | 2017-10-16 | A kind of method for packing of semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706136A true CN107706136A (en) | 2018-02-16 |
Family
ID=61183862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710963974.3A Pending CN107706136A (en) | 2017-10-16 | 2017-10-16 | A kind of method for packing of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107706136A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115103524A (en) * | 2022-05-20 | 2022-09-23 | 信利光电股份有限公司 | Full-encapsulating method applied to components on FPC, FPC and display module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1900776A (en) * | 2005-07-21 | 2007-01-24 | 三洋爱普生映像元器件有限公司 | Liquid crystal display device and its manufacturing method |
| CN1936078A (en) * | 2006-09-01 | 2007-03-28 | 烟台硕德新材料有限公司 | Novel composite conductive microsphere and preparation method thereof |
| CN101057325A (en) * | 2003-04-24 | 2007-10-17 | 国际商业机器公司 | Lead free alloys for column/ball grid arrays, organic interposers and passive component assembly |
| CN105140197A (en) * | 2015-07-14 | 2015-12-09 | 华进半导体封装先导技术研发中心有限公司 | FAN-OUT packing structure with TSV and packaging method thereof |
-
2017
- 2017-10-16 CN CN201710963974.3A patent/CN107706136A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101057325A (en) * | 2003-04-24 | 2007-10-17 | 国际商业机器公司 | Lead free alloys for column/ball grid arrays, organic interposers and passive component assembly |
| CN1900776A (en) * | 2005-07-21 | 2007-01-24 | 三洋爱普生映像元器件有限公司 | Liquid crystal display device and its manufacturing method |
| CN1936078A (en) * | 2006-09-01 | 2007-03-28 | 烟台硕德新材料有限公司 | Novel composite conductive microsphere and preparation method thereof |
| CN105140197A (en) * | 2015-07-14 | 2015-12-09 | 华进半导体封装先导技术研发中心有限公司 | FAN-OUT packing structure with TSV and packaging method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115103524A (en) * | 2022-05-20 | 2022-09-23 | 信利光电股份有限公司 | Full-encapsulating method applied to components on FPC, FPC and display module |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180216 |