CN107622980B - Semiconductor device, method for manufacturing same, and epoxy resin composition for semiconductor encapsulation - Google Patents
Semiconductor device, method for manufacturing same, and epoxy resin composition for semiconductor encapsulation Download PDFInfo
- Publication number
- CN107622980B CN107622980B CN201710574007.8A CN201710574007A CN107622980B CN 107622980 B CN107622980 B CN 107622980B CN 201710574007 A CN201710574007 A CN 201710574007A CN 107622980 B CN107622980 B CN 107622980B
- Authority
- CN
- China
- Prior art keywords
- resin composition
- thermosetting resin
- sealing material
- semiconductor device
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 204
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 162
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 162
- 239000000203 mixture Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000005538 encapsulation Methods 0.000 title claims description 7
- 239000011342 resin composition Substances 0.000 claims abstract description 235
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 220
- 239000003566 sealing material Substances 0.000 claims abstract description 193
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 70
- 239000011231 conductive filler Substances 0.000 claims abstract description 59
- 239000005011 phenolic resin Substances 0.000 claims abstract description 36
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229920001568 phenolic resin Polymers 0.000 claims abstract description 26
- 239000000945 filler Substances 0.000 claims description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 238000007789 sealing Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 23
- 239000012765 fibrous filler Substances 0.000 claims description 22
- 239000000835 fiber Substances 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 18
- 239000010439 graphite Substances 0.000 claims description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 18
- 239000007787 solid Substances 0.000 claims description 17
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 16
- 239000004917 carbon fiber Substances 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000012778 molding material Substances 0.000 claims description 10
- 239000000047 product Substances 0.000 description 77
- 238000012360 testing method Methods 0.000 description 47
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 40
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 31
- 239000002245 particle Substances 0.000 description 30
- 229920005989 resin Polymers 0.000 description 30
- 239000011347 resin Substances 0.000 description 30
- 238000000465 moulding Methods 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 25
- -1 1,3-phenylenediisopropylidene Chemical group 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000007822 coupling agent Substances 0.000 description 19
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 14
- 238000000748 compression moulding Methods 0.000 description 14
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- 238000010292 electrical insulation Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000011417 postcuring Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 229920003986 novolac Polymers 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 238000001721 transfer moulding Methods 0.000 description 8
- 239000004305 biphenyl Substances 0.000 description 7
- 235000010290 biphenyl Nutrition 0.000 description 7
- 229930185605 Bisphenol Natural products 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 6
- 239000006229 carbon black Substances 0.000 description 6
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 6
- 239000012948 isocyanate Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920000768 polyamine Polymers 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000003575 carbonaceous material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000011256 inorganic filler Substances 0.000 description 5
- 229910003475 inorganic filler Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000001993 wax Substances 0.000 description 5
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 4
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 4
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 4
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 4
- PVFQHGDIOXNKIC-UHFFFAOYSA-N 4-[2-[3-[2-(4-hydroxyphenyl)propan-2-yl]phenyl]propan-2-yl]phenol Chemical compound C=1C=CC(C(C)(C)C=2C=CC(O)=CC=2)=CC=1C(C)(C)C1=CC=C(O)C=C1 PVFQHGDIOXNKIC-UHFFFAOYSA-N 0.000 description 4
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 4
- GIXXQTYGFOHYPT-UHFFFAOYSA-N Bisphenol P Chemical compound C=1C=C(C(C)(C)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GIXXQTYGFOHYPT-UHFFFAOYSA-N 0.000 description 4
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 4
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 4
- 229920000877 Melamine resin Polymers 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 229920001807 Urea-formaldehyde Polymers 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 4
- 150000001409 amidines Chemical class 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 229930003836 cresol Natural products 0.000 description 4
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 239000003063 flame retardant Substances 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 4
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 150000002513 isocyanates Chemical class 0.000 description 4
- 229940018564 m-phenylenediamine Drugs 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 150000003839 salts Chemical group 0.000 description 4
- 229920002545 silicone oil Polymers 0.000 description 4
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000012644 addition polymerization Methods 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000006082 mold release agent Substances 0.000 description 3
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 2
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 2
- VADKRMSMGWJZCF-UHFFFAOYSA-N 2-bromophenol Chemical compound OC1=CC=CC=C1Br VADKRMSMGWJZCF-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 2
- HDPBBNNDDQOWPJ-UHFFFAOYSA-N 4-[1,2,2-tris(4-hydroxyphenyl)ethyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 HDPBBNNDDQOWPJ-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- SDDLEVPIDBLVHC-UHFFFAOYSA-N Bisphenol Z Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)CCCCC1 SDDLEVPIDBLVHC-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N butadiene group Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000007517 lewis acids Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 2
- JRNGUTKWMSBIBF-UHFFFAOYSA-N naphthalene-2,3-diol Chemical compound C1=CC=C2C=C(O)C(O)=CC2=C1 JRNGUTKWMSBIBF-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 235000019809 paraffin wax Nutrition 0.000 description 2
- 235000010603 pastilles Nutrition 0.000 description 2
- 235000019271 petrolatum Nutrition 0.000 description 2
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 150000004714 phosphonium salts Chemical class 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000005077 polysulfide Substances 0.000 description 2
- 229920001021 polysulfide Polymers 0.000 description 2
- 150000008117 polysulfides Polymers 0.000 description 2
- 229920006295 polythiol Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 239000002516 radical scavenger Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011134 resol-type phenolic resin Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 150000007970 thio esters Chemical class 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 125000006839 xylylene group Chemical group 0.000 description 2
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- ASKRKIHKCXVOPT-UHFFFAOYSA-N C(=O)(O)C(O)C(O)C(=O)O.C(=O)(O)C(O)C(O)C(=O)O.N(CCO)CCO Chemical compound C(=O)(O)C(O)C(O)C(=O)O.C(=O)(O)C(O)C(O)C(=O)O.N(CCO)CCO ASKRKIHKCXVOPT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- 240000006413 Prunus persica var. persica Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004164 Wax ester Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- ZEASXVYVFFXULL-UHFFFAOYSA-N amezinium metilsulfate Chemical compound COS([O-])(=O)=O.COC1=CC(N)=CN=[N+]1C1=CC=CC=C1 ZEASXVYVFFXULL-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- ZDZHCHYQNPQSGG-UHFFFAOYSA-N binaphthyl group Chemical group C1(=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12 ZDZHCHYQNPQSGG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004206 montan acid ester Substances 0.000 description 1
- 235000013872 montan acid ester Nutrition 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 150000004002 naphthaldehydes Chemical class 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical class CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 1
- 239000004209 oxidized polyethylene wax Substances 0.000 description 1
- 235000013873 oxidized polyethylene wax Nutrition 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000009517 secondary packaging Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
The semiconductor device of the present invention includes: a semiconductor element (30); a first sealing material (10) which seals the semiconductor element (30) so as to cover the surface of the semiconductor element (30), and which is formed from a cured product of a first thermosetting resin composition; and a second sealing material (20) which seals the first sealing material (10) so as to cover the surface of the first sealing material (10), and which is formed from a cured product of a second thermosetting resin composition different from the first thermosetting resin composition, the second thermosetting resin composition being an epoxy resin composition containing an epoxy resin, a phenolic resin curing agent, a curing accelerator, and a conductive filler.
Description
Technical Field
The present invention relates to a semiconductor device, a method for manufacturing the semiconductor device, an epoxy resin composition for sealing a semiconductor, and a resin composition.
Background
In recent years, with the development and popularization of information communication technologies such as the internet, studies on the use of electromagnetic waves have been conducted not only for communication devices such as personal computers and mobile phones but also for various electronic devices that do not use electromagnetic waves until now. Meanwhile, many studies have been made on electronic devices using electromagnetic waves to suppress the occurrence of various problems such as malfunction, functional failure, and malfunction of the electronic devices due to the influence of electromagnetic wave noise emitted from other electronic devices. In view of such circumstances, various techniques have been reported for a sealing material to which electromagnetic wave absorption capability is imparted.
As a technique for a sealing material to which electromagnetic wave absorption capability is imparted, for example, the following is given.
Patent document 1 describes a resin composition for sealing a semiconductor, which is obtained by blending an epoxy resin with composite material particles having an electromagnetic wave shielding function, the composite material particles being formed by dispersing particles containing at least one of a metal-based material, a ferrite-based material and a carbon-based material in the resin. This document also describes a technique for a semiconductor device in which a semiconductor element is directly sealed with the above resin composition for sealing a semiconductor.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2008-1757
Disclosure of Invention
However, from the viewpoint of the balance between electromagnetic wave shielding properties and electrical insulation properties, there is still room for improvement in the conventional semiconductor device having the sealing material provided with electromagnetic wave absorbing ability as described in patent document 1 and the like.
From the above findings, the present invention provides a technique relating to the fabrication of a semiconductor device having an excellent balance between electromagnetic wave shielding properties and electrical insulation properties.
According to the present invention, there is provided a semiconductor device having:
a semiconductor element;
a first sealing material which seals the semiconductor element so as to cover a surface of the semiconductor element, the first sealing material being formed from a cured product of a first thermosetting resin composition; and
a second sealing material which seals the first sealing material so as to cover a surface of the first sealing material and is formed of a cured product of a second thermosetting resin composition different from the first thermosetting resin composition,
the second thermosetting resin composition is an epoxy resin composition containing an epoxy resin, a phenolic resin curing agent, a curing accelerator, and a conductive filler.
In addition, according to the present invention, there is provided a method of manufacturing a semiconductor device, including:
forming a first sealing material by sealing the semiconductor element with a cured product of a first thermosetting resin composition so as to cover a surface of the semiconductor element; and
a step of sealing the first sealing material with a cured product of a second thermosetting resin composition different from the first thermosetting resin composition so as to cover the surface of the first sealing material to form a second sealing material,
the second thermosetting resin composition is an epoxy resin composition containing an epoxy resin, a phenolic resin curing agent, a curing accelerator, and a conductive filler.
Further, according to the present invention, there is provided an epoxy resin composition for semiconductor encapsulation, which is used for forming a second encapsulating material for encapsulating a first encapsulating material so as to cover a surface of the first encapsulating material, wherein the first encapsulating material is formed of a cured product of a thermosetting resin composition so as to cover a surface of a semiconductor element,
the epoxy resin composition for sealing a semiconductor comprises an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler.
Further, according to the present invention, there is provided a resin composition comprising:
a molding material group composed of the first thermosetting resin composition for forming the first sealing material in the semiconductor device; and
and a molding material group composed of the second thermosetting resin composition for forming the second sealing material in the semiconductor device.
Effects of the invention
According to the present invention, a technique relating to the manufacture of a semiconductor device having an excellent balance between electromagnetic wave shielding properties and electrical insulation properties can be provided.
Drawings
The above and other objects, features and advantages will be more apparent from the following description of preferred embodiments and the accompanying drawings.
Fig. 1 is a diagram showing an example of a semiconductor device according to the present embodiment.
Fig. 2 is a diagram showing an example of the semiconductor device according to the present embodiment.
Detailed Description
Hereinafter, embodiments will be described with reference to the drawings. In all the drawings, the same components are denoted by the same reference numerals, and the description thereof is omitted as appropriate.
< semiconductor device >
Fig. 1 is a diagram showing an example of a semiconductor device 100 according to the present embodiment. Note that, although the semiconductor device 100 according to the present embodiment is described by way of example as being electrically connected by a bonding wire, the semiconductor device 100 is not limited to a device using a bonding wire.
As shown in fig. 1, a semiconductor device 100 according to the present embodiment includes: a semiconductor element (30); a first sealing material 10 formed of a cured product of a first thermosetting resin composition for sealing the semiconductor element 30 so as to cover the surface of the semiconductor element 30; and a second sealing material 20 which seals the first sealing material 10 so as to cover the surface of the first sealing material 10 and is formed of a cured product of a second thermosetting resin composition different from the first thermosetting resin composition. That is, the semiconductor device 100 according to the present embodiment may be said to include: a semiconductor element (30); a first sealing material 10 which seals the semiconductor element 30 and is formed from a cured product of a first thermosetting resin composition; and a second sealing material 20 which is disposed outside the surface of the first sealing material 10 opposite to the surface on which the semiconductor element 30 is disposed and which is formed of a cured product of a second thermosetting resin composition different from the first thermosetting resin composition. In the present embodiment, the second thermosetting resin composition is an epoxy resin composition containing an epoxy resin, a phenol resin curing agent, a curing accelerator, and a conductive filler. Thus, a semiconductor device having an excellent balance between electromagnetic wave shielding characteristics and electrical insulation characteristics can be realized.
As described above, the semiconductor device 100 according to the present embodiment is characterized by having the first sealing material 10 that seals the semiconductor element 30 and the second sealing material 20 that is formed of a cured product of the second thermosetting resin composition containing the conductive filler and seals the first sealing material 10. In other words, the semiconductor device 100 according to the present embodiment has a structure in which 2 kinds of sealing materials are arranged in a predetermined order outside the semiconductor element 30. More specifically, the semiconductor device 100 according to the present embodiment is configured such that the semiconductor element 30 is sealed with the first sealing material 10, and the second sealing material 20 having electromagnetic wave shielding properties imparted thereto by including a conductive filler is disposed outside the first sealing material 10. Therefore, according to the semiconductor device 100 of the present embodiment, the first sealing material 10 can exhibit electrical insulation properties, and the second sealing material 20 can exhibit electromagnetic wave shielding properties.
As shown in fig. 1, the semiconductor element 30 included in the semiconductor device 100 according to the present embodiment is mounted on and fixed to the substrate 50 via the die-bonding material cured product 80. The substrate 50 may be a lead frame or an organic substrate. Further, electrode pads (not shown) of the semiconductor element 30 and electrode pads 70 on the substrate 50 are electrically connected by bonding wires 60. That is, in the semiconductor device 100 shown in fig. 1, a structural body including the semiconductor element 30, the first sealing material 10, and the second sealing material 20 is formed on the substrate 50.
Note that, in the semiconductor device 100 according to the present embodiment, as long as the semiconductor element 30, the first sealing material 10, and the second sealing material 20 are formed in the above-described arrangement, a so-called Fan-out type in which a rewiring layer is further formed outside the chip mounting region may be used.
As described above, the semiconductor device 100 according to the present embodiment includes the first sealing material 10 and the second sealing material 20, but may be further sealed with a sealing material different from these sealing materials.
In the semiconductor device 100 according to the present embodiment, when the linear expansion coefficient at 25 ℃ of the first sealing material 10 is L1 and the linear expansion coefficient at 25 ℃ of the second sealing material 20 is L2, the upper limit of the absolute value of L1-L2 is preferably 30ppm or less, more preferably 28ppm or less, still more preferably 26ppm or less, and most preferably 20ppm or less. In this way, it is possible to suppress the occurrence of internal stress in the interface between the second sealing material 20 and the first sealing material 10 and the interface region between the second sealing material 20 or the first sealing material 10 and the substrate 50. This makes it possible to realize the semiconductor device 100 having excellent adhesion between 2 kinds of sealing materials and excellent adhesion between each sealing material 10 (20) and the substrate 50. Further, by setting the absolute value of L1 to L2 within the above numerical range, it is possible to form the semiconductor device 100 having excellent reflow resistance and long-term reliability. In particular, the above-mentioned effect tends to be more pronounced when the upper limit of the absolute value of L1-L2 is 20ppm or less.
The lower limit of the absolute value of L1-L2 is not limited, and may be, for example, 0ppm or more. The absolute value of L1 to L2 is preferably as close to 0ppm as possible.
In the present embodiment, from the viewpoint of more uniformly improving the adhesion between the first sealing material 10 and the second sealing material 20 and the adhesion between the first sealing material 10 and the substrate 50, the upper limit value of the linear expansion coefficient L1 of the first sealing material 10 (cured product of the first thermosetting resin composition) at 25 ℃ is preferably 30ppm or less, and more preferably 20ppm or less, for example.
From the same viewpoint as the above upper limit, the lower limit of the linear expansion coefficient L1 of the first sealing material 10 at 25 ℃ is preferably 1ppm or more, and more preferably 5ppm or more, for example.
In the present embodiment, from the viewpoint of more uniformly improving the adhesion between the second sealing material 20 and the first sealing material 10 and the adhesion between the second sealing material 20 and the substrate 50, the upper limit value of the linear expansion coefficient L2 of the second sealing material 20 (cured product of the second thermosetting resin composition) at 25 ℃ is preferably 50ppm or less, and more preferably 40ppm or less.
From the same viewpoint as the above upper limit, the lower limit of the linear expansion coefficient L2 of the second sealing material 20 at 25 ℃ is, for example, preferably 10ppm or more, and more preferably 20ppm or more.
Among them, the linear expansion coefficient L1 at 25 ℃ of the first sealing material 10 (cured product of the first thermosetting resin composition) and the linear expansion coefficient L2 at 25 ℃ of the second sealing material 20 (cured product of the second thermosetting resin composition) can be measured, for example, as follows. First, a desired thermosetting resin composition was injection-molded using a progressive die molding machine under conditions of a mold temperature of 175 ℃, an injection pressure of 9.8MPa, and a curing time of 3 minutes, to obtain a test piece having a length of 15mm × a width of 4mm × a thickness of 3 mm. Subsequently, the obtained test piece was subjected to heat treatment and post-curing at 175 ℃ for 4 hours. Next, the test piece after post-curing was measured using a thermal expansion meter.
In the semiconductor device 100 shown in fig. 1, when the position where the semiconductor element 30 is disposed is set as the center, the first sealing material 10 is disposed at a position closer to the center than the second sealing material 20. In the semiconductor device 100 according to the present embodiment, it is preferable that the linear expansion coefficients at 25 ℃ of the semiconductor element 30, the first sealing material 10, and the second sealing material 20 be smaller as the members disposed on the center side are. That is, with the semiconductor device 100 of fig. 1, the coefficient of linear expansion L1 at 25 ℃ of the first sealing material 10 is preferably smaller than, for example, the coefficient of linear expansion L2 at 25 ℃ of the second sealing material 20. In the first sealing member 10 and the second sealing member 20, the upper limit of the absolute value of L2-L1 calculated from the linear expansion coefficient L1 at 25 ℃ of the first sealing member 10 disposed on the center side and the linear expansion coefficient L2 at 25 ℃ of the second sealing member 20 disposed at a position further from the center than the first sealing member 10 is preferably 30ppm or less, more preferably 28ppm or less, further preferably 26ppm or less, and most preferably 20ppm or less. This can alleviate the influence of internal stress generated in the semiconductor element 30 and the interface region between the sealing material 10 (20) and the substrate 50 on the semiconductor device 100. Therefore, the semiconductor device 100 having excellent adhesion between 2 kinds of sealing materials and excellent adhesion between each sealing material 10 (20) and the substrate 50 can be realized.
The lower limit of the absolute value of L2-L1 is not limited, and may be, for example, 0ppm or more. The absolute value of L1 to L2 is preferably as close to 0ppm as possible.
In the semiconductor device 100 according to the present embodiment, as shown in fig. 2, the first sealing material 10 may be covered with the second sealing material 20 so that a part of the first sealing material 10 is exposed. Specifically, the second sealing material 20 in the semiconductor device 100 according to the present embodiment may be formed so as to cover only the top surface of the first sealing material 10.
In the semiconductor device 100 according to the present embodiment, it is preferable that the entire surface area of the first sealing material 10 is covered with the second sealing material 20 so that the entire surface area of the first sealing material 10 is not exposed, as shown in fig. 1, from the viewpoint of improving the adhesion between the first sealing material 10 and the second sealing material 20 and consequently more uniformly exhibiting the electromagnetic wave shielding property and the electrical insulation property. That is, in the semiconductor device 100 according to the present embodiment, the second sealing material 20 may cover a part of the surface of the first sealing material 10 or may cover the entire surface thereof, but it is preferable to cover the entire surface of the first sealing material 10 so that the entire surface of the first sealing material 10 is not exposed from the viewpoint of more uniformly exhibiting the electromagnetic wave shielding property and the electrical insulation property.
In the semiconductor device 100 according to the present embodiment, the first sealing material 10 may cover a part of the surface of the semiconductor element 30 or may cover the entire surface thereof, but it is preferable to cover the entire surface area of the semiconductor element 30 so that the entire surface area of the semiconductor element 30 is not exposed from the viewpoint of exhibiting good electrical insulation properties.
Next, a method for manufacturing the semiconductor device 100 according to the present embodiment will be described.
First, the semiconductor element 30 is mounted on the substrate 50. Next, the substrate 50 and the semiconductor element 30 are connected to each other by the bonding wires 60. Next, the semiconductor element 30 and the bonding wire 60 are sealed with the first sealing material 10 made of a cured product of the first thermosetting resin composition so as to cover the surface of the semiconductor element 30. Thereafter, the first sealing material 10 is sealed with a cured product of a second thermosetting resin composition different from the first thermosetting resin composition so as to cover the surface of the first sealing material 10, thereby forming a second sealing material 20. Thus, the semiconductor device 100 according to the present embodiment is manufactured.
Examples of the method for sealing and molding the first sealing member 10 or the second sealing member 20 include a progressive die molding method, a compression molding method, and a lamination molding method. The first sealing member 10 and the second sealing member 20 may be formed by the same method or different methods.
In the present embodiment, the seal molding and the production of the cured product can be performed under the following conditions, for example. First, the conditions for seal molding may be, for example, a temperature of 120 ℃ to 200 ℃ for 10 seconds to 10 minutes. The conditions for producing a cured product by post curing (post cure) after the seal molding may be, for example, 150 ℃ to 180 ℃ inclusive, and 2 hours to 24 hours inclusive.
The semiconductor device 100 according to the present embodiment may be manufactured using a structure in which a semiconductor wafer is mounted on the substrate 50. In this case, the semiconductor device 100 according to the present embodiment can be manufactured by the following method.
First, a structure in which a semiconductor wafer is mounted on a substrate 50 is prepared. Next, a plurality of cuts of a predetermined width are formed in the semiconductor wafer along the dicing region of the semiconductor wafer from the surface of the structure opposite to the surface on which the substrate 50 is provided, thereby producing a plurality of semiconductor chips 30 obtained by singulating the semiconductor wafer. That is, the semiconductor wafer is half-diced from the surface of the structure opposite to the surface on which the substrate 50 is provided. Next, the first sealing material 10 and the second sealing material 20 were formed in the above-described manner. This enables a plurality of semiconductor devices 100 according to the present embodiment to be manufactured at the same time. That is, by the above method, a plurality of semiconductor devices 100 according to the present embodiment can be simultaneously manufactured.
In forming the cut mark, a dicing blade, a laser, or the like may be used. The width of the cut is not particularly limited, but is preferably 50 μm to 300 μm. Also, the cuts are preferably formed at equal intervals. The width of the scribe is usually set in consideration of conditions such as the strength of the semiconductor wafer after the formation of the scribe and the circuit arrangement. Therefore, the width of the scribe can be appropriately set within the above numerical range in the design stage of the semiconductor device 100 according to the above conditions.
Next, a thermosetting resin composition for forming the first sealing material 10 and the second sealing material 20 of the semiconductor device 100 according to the present embodiment will be described. Among them, the first thermosetting resin composition and the second thermosetting resin composition, which are the respective thermosetting resin compositions for forming the first sealing material 10 and the second sealing material 20, preferably contain a common resin component from the viewpoint of improving the adhesion between the first sealing material 10 and the second sealing material 20. That is, it is preferable that both the first thermosetting resin composition and the second thermosetting resin composition contain, for example, an epoxy resin.
The first thermosetting resin composition for forming the first sealing material 10 according to the present embodiment and the second thermosetting resin composition for forming the second sealing material 20 can be distributed in the market in the form of a combination of resins composed of both. The resin composition according to the present embodiment may include: a molding material group composed of a first thermosetting resin composition for forming the first sealing material 10; and a molding material group composed of a second thermosetting resin composition for forming the second sealing material 20. In the present embodiment, the molding material group made of the first thermosetting resin composition and the molding material group made of the second thermosetting resin composition are both preferably made of a solid resin composition.
In the present embodiment, the swirl length of the second thermosetting resin composition measured by the EMMI-1-66 method is preferably 50cm or more, more preferably 80cm or more, and still more preferably 85cm or more. Thus, when a semiconductor device is manufactured, the occurrence of defects such as the absence of a sealing material or the occurrence of voids can be suppressed. The upper limit of the swirl length may be 350cm or less, 300cm or less, or 280cm or less, for example. In this way, the sealing material formed of the second thermosetting resin composition can have good moldability.
The swirl length measured by the EMMI-1-66 method can be measured, for example, by the following method. A resin composition was injected into a mold for measuring a swirling length based on EMMI-1-66 under conditions of a mold temperature of 175 ℃, an injection pressure of 6.9MPa, and a curing time of 120 seconds using a low-pressure transfer molding Machine ("KTS-15" manufactured by Kohtaki Precision Machine Co., ltd.), and the swirling length was measured as a swirling length. Wherein the unit is cm.
In the present embodiment, the swirl length of the first thermosetting resin composition measured by the EMMI-1-66 method is preferably 80cm to 250cm, more preferably 100cm to 230cm, and most preferably 110cm to 200 cm. Thus, when a semiconductor device is manufactured, occurrence of a trouble such as an unfilled sealing material or displacement of a wire can be suppressed. Here, the above-mentioned swirl length measured by the EMMI-1-66 method can be measured in the same manner as in the above-mentioned method for the second thermosetting resin composition.
In the present embodiment, the flexural strength of the cured product of the second thermosetting resin composition at 260 ℃ is preferably 0.5MPa to 50MPa, more preferably 1MPa to 30MPa, and still more preferably 2MPa to 20 MPa. This can suppress the occurrence of warpage in the semiconductor device. The flexural strength at 260 ℃ of the cured product can be measured in an atmosphere of 260 ℃ according to JIS K6911.
In the present embodiment, the flexural strength of the cured product of the first thermosetting resin composition at 260 ℃ is preferably 5MPa to 100MPa, and more preferably 10MPa to 50 MPa. This improves the adhesion between the sealing material and the substrate in the semiconductor device.
In the present embodiment, the electromagnetic wave shielding property of the cured product of the second thermosetting resin composition at a frequency of 1GHz is preferably 5dB to 100dB, more preferably 10dB to 70dB, from the viewpoint of improving the electromagnetic wave shielding property of a semiconductor device having a sealing material produced using the resin composition. The electromagnetic wave shielding property of the cured product at a frequency of 1GHz can be measured, for example, by the following method. The second thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes to obtain a test piece having a length of 110mm, a width of 110mm, and a thickness of 1 mm. The obtained test piece was subjected to heat treatment and post-curing at 175 ℃ for 4 hours. Subsequently, the test piece after post-curing was placed between a transmitting antenna and a receiving antenna of TR17301A manufactured by Advantest corporation, and the test piece was measured under the condition of a measurement frequency of 1 GHz.
The semiconductor device according to the present embodiment is excellent in that it has high electromagnetic wave shielding properties against high-frequency electromagnetic waves such as 1 GHz. High frequency electromagnetic waves such as 1GHz have larger electric energy and magnetic energy than electromagnetic waves having a frequency of less than 1 GHz. When semiconductor devices are arranged in high density in a mobile phone, a PC, or the like, high-frequency electromagnetic waves such as 1GHz interfere with the semiconductor devices, and cause malfunction of the semiconductor devices. The semiconductor device of the present invention has high electromagnetic wave shielding properties, and therefore, even if an electromagnetic wave having a high frequency such as 1GHz is generated, the semiconductor device is excellent from the viewpoint that malfunction of the semiconductor device is not easily caused.
The second thermosetting resin composition for forming the second sealing material 20 will be explained. The second thermosetting resin composition is an epoxy resin composition comprising an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler. From the viewpoint of handling properties, the form of the second thermosetting resin composition is preferably processed into a powder-granular, pastille or sheet form. That is, the form of the second thermosetting resin composition is preferably solid.
As described above, the second thermosetting resin composition contains an epoxy resin. The epoxy resin may be a monomer, oligomer or polymer having 2 or more epoxy groups in 1 molecule, regardless of the molecular weight or molecular structure. Specific examples of such epoxy resins include one or two or more compounds selected from the following: bisphenol type epoxy resins such as bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, bisphenol S type epoxy resin, hydrogenated bisphenol a type epoxy resin, bisphenol M type epoxy resin (4,4 '- (1,3-phenylenediisopropylidene) bisphenol type epoxy resin, 4,4' - (1,3-phenylenediisopropylidene) bisphenoxy resin, bisphenol P type epoxy resin (4,4 '- (1,4-phenylenediisopropylidene) bisphenol type epoxy resin), bisphenol Z type epoxy resin (4,4' -cyclohexadienebisphenol type epoxy resin), and the like; novolac-type epoxy resins such as phenol novolac-type epoxy resins, bromophenol novolac-type epoxy resins, cresol novolac-type epoxy resins, tetraphenolethane novolac-type epoxy resins, and novolac-type epoxy resins having a condensed ring aromatic hydrocarbon structure; biphenyl type epoxy resin; aralkyl type epoxy resins such as a xylylene type epoxy resin and a phenol aralkyl type epoxy resin having a biphenylene skeleton; epoxy resins having a naphthalene skeleton such as a naphthylene ether type epoxy resin, a naphthol type epoxy resin, a naphthalene type epoxy resin, a naphthalenediphenol type epoxy resin, a 2-to 4-functional epoxy type naphthol resin, a binaphthyl type epoxy resin, and a naphthylaralkyl type epoxy resin; an anthracene-type epoxy resin; phenoxy type epoxy resins; dicyclopentadiene type epoxy resins; norbornene-type epoxy resins; an adamantane type epoxy resin; heterocyclic epoxy resins such as fluorene-based epoxy resin, phosphorus-containing epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, bisphenol a novolac-type epoxy resin, bixylenol-type epoxy resin, trishydroxyphenylmethane-type epoxy resin, tetrahydroxyphenylethane-type epoxy resin, triglycidyl isocyanurate, and the like; glycidyl amines such as N, N '-tetraglycidyl m-xylylenediamine, N' -tetraglycidyl bisaminomethylcyclohexane and N, N-diglycidylaniline, copolymers of glycidyl (meth) acrylate and compounds having an ethylenically unsaturated double bond, epoxy resins having a butadiene structure, diglycidyl etherate of bisphenol, diglycidyl etherate of naphthalenediol, and glycidyl etherate of phenol. Among these, trishydroxyphenylmethane type epoxy resins, biphenyl type epoxy resins, bisphenol a type epoxy resins, and phenol aralkyl type epoxy resins having a biphenylene skeleton are more preferable. This improves reflow resistance of the semiconductor device and suppresses warpage.
The content of the epoxy resin is, for example, preferably 3% by mass or more, and more preferably 5% by mass or more, relative to the total amount of solid components of the second thermosetting resin composition. When the content of the epoxy resin is not less than the lower limit, it is possible to contribute to improvement in adhesion between the second sealing material 20 formed using the second thermosetting resin composition and the first sealing material 10 or the substrate 50. On the other hand, the content of the epoxy resin is, for example, preferably 40% by mass or less, and more preferably 35% by mass or less, relative to the total amount of the solid components of the second thermosetting resin composition. By setting the content of the epoxy resin to be not more than the above upper limit, the heat resistance and the moisture resistance of the second sealing material 20 formed using the second thermosetting resin composition can be improved.
As described above, the second thermosetting resin composition contains the phenolic resin curing agent. The phenolic resin curing agent may be any one that can react with an epoxy resin to cure the epoxy resin. Specifically, the phenolic resin curing agent is a monomer, oligomer or polymer having 2 or more phenolic hydroxyl groups in 1 molecule, and the molecular weight and molecular structure thereof are not particularly limited, and examples thereof include: novolak resins such as phenol novolak resin, cresol novolak resin, and naphthol novolak resin; multifunctional phenol resins such as trisphenol methane type phenol resins; modified phenolic resins such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; aralkyl-type resins such as phenol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton and naphthol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F. These can be used alone, or can be combined with 2 or more. Such a phenolic resin curing agent provides a good balance among flame resistance, moisture resistance, electrical characteristics, curability, storage stability, and the like. In particular, from the viewpoint of curability, a hydroxyl group equivalent of 90g/eq to 250g/eq is preferable.
In the second thermosetting resin composition according to the present embodiment, another curing agent may be used in combination with the phenolic resin curing agent. Examples of the curing agent that can be used in combination include an addition polymerization type curing agent, a catalytic type curing agent, and a condensation type curing agent.
Specific examples of the polyaddition type curing agent include aliphatic polyamines such as Diethylenetriamine (DETA), triethylenetetramine (TETA) and m-xylylenediamine (MXDA), aromatic polyamines such as diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA) and diaminodiphenylsulfone (DDS), and polyamine compounds such as Dicyandiamide (DICY) and organic acid dihydrazide; alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), and acid anhydrides including aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA); phenolic resin curing agents such as novolak-type phenolic resins and polyvinyl phenols; polythiol compounds such as polysulfides, thioesters and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; and organic acids such as carboxylic acid-containing polyester resins.
Specific examples of the catalyst-type curing agent include tertiary amine compounds such as Benzyldimethylamine (BDMA) and 2,4,6-tris-dimethylaminomethylphenol (DMP-30); imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI 24); lewis acids such as BF3 complexes, etc.
Specific examples of the condensation-type curing agent include resol-type phenolic resins; urea resins such as methylol group-containing urea resins; melamine resins such as methylol group-containing melamine resins, and the like.
When such other curing agents are used in combination, the lower limit of the mixing ratio of the phenolic resin curing agent is preferably 20% by mass or more, more preferably 30% by mass or more, and particularly preferably 50% by mass or more, based on the total curing agents. When the blending ratio is within the above range, flame resistance and solder resistance can be maintained, and good fluidity can be exhibited.
The lower limit of the blending ratio of the total curing agent is preferably 3% by mass or more, and more preferably 5% by mass or more, relative to the total amount of solid components of the second thermosetting resin composition. When the lower limit of the blending ratio is within the above range, good curability can be obtained. The upper limit of the mixing ratio of the total curing agent is preferably 30 mass% or less, and more preferably 25 mass% or less, with respect to the total amount of solid components of the second thermosetting resin composition. When the upper limit of the blending ratio is within the above range, good solder resistance can be obtained.
As described above, the second thermosetting resin composition contains a curing accelerator. The curing accelerator may be any one that can accelerate the crosslinking reaction between the epoxy group of the epoxy resin and the phenolic hydroxyl group of the phenolic resin curing agent, and any one used for a general epoxy resin composition for encapsulating a semiconductor can be used. Examples of the curing accelerator include phosphorus atom-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and adducts of phosphonium compounds and silane compounds; amidines and tertiary amines exemplified by 1,8-diazabicyclo- [5.4.0] -undecene-7, benzyldimethylamine, 2-methylimidazole, and nitrogen atom-containing compounds such as the quaternary salts of the amidines and amines, and the like can be used alone in 1 kind or in combination of 2 or more kinds.
The content of the curing accelerator is preferably 0.05% by mass or more and 2% by mass or less, and more preferably 0.1% by mass or more and 1.5% by mass or less, with respect to the entire second thermosetting resin composition. By setting the content of the curing accelerator to the lower limit or more, the curability of the second thermosetting resin composition can be suppressed from decreasing. In addition, by setting the content of the curing accelerator to the upper limit or less, it is possible to suppress a decrease in fluidity of the second thermosetting resin composition.
As described above, the second thermosetting resin composition contains the conductive filler. Examples of such a conductive filler include fibers and particles made of a material capable of imparting conductivity. In the present embodiment, the fiber means a fibrous filler. The particles mean particulate fillers.
Examples of such fibers include metal fibers and carbon fibers. Specific examples of the metal material constituting the metal fibers include copper, stainless steel, aluminum, nickel, titanium, tungsten, tin, lead, iron, silver, chromium, carbon, and alloys thereof. Among them, carbon is preferably contained as a main component from the viewpoint of imparting excellent electromagnetic wave shielding properties to the second sealing material 20. In the present embodiment, the conductive filler containing carbon as a main component means, for example, a filler containing carbon in an amount of 50 mass% or more based on the total amount of the conductive filler. Specific examples of the conductive filler containing carbon as a main component include graphite, carbon black, carbon, coke, diamond, black lead (graphite), carbon nanotube, fullerene, and carbon fiber.
When the conductive filler is a particle, the shape thereof may be flat, granular, plate-like, needle-like, or the like.
The content of the conductive filler is, for example, preferably 35% by mass or more and 65% by mass or less, and more preferably 40% by mass or more and 60% by mass or less, with respect to the total amount of solid components of the second thermosetting resin composition. This can more effectively improve the balance between the mechanical properties and the thermal properties and electromagnetic wave shielding properties of the second sealing material 20 obtained by molding the second thermosetting resin composition.
In the second thermosetting resin composition, at least 2 or more kinds of conductive fillers having different aspect ratios are preferably contained depending on the desired characteristics. When the second thermosetting resin composition contains at least 2 or more kinds of conductive fillers having different aspect ratios, carbon materials are preferably contained as 1 kind of the conductive fillers. In this case, as a specific combination of the conductive fillers that can be used, a combination containing the following fibrous filler and another filler having a smaller aspect ratio than the fibrous filler is exemplified. Specifically, the conductive filler of 2 or more types preferably contains at least graphite and carbon fiber. These conductive fillers may be surface-treated with a silane coupling agent such as an N-phenyl-3-aminopropyltrimethoxysilane coupling agent, an aluminate coupling agent, a titanate coupling agent, or the like, or may be treated with a bundling agent for improving adhesion to a resin and workability.
In the present embodiment, the aspect ratio is (long diameter)/(short diameter) of the conductive filler.
When the conductive filler is a fibrous filler, the major axis represents the length of the fibrous filler, and the minor axis represents the fiber diameter of the fibrous filler.
The long and short diameters of the particulate filler can be evaluated by direct observation using, for example, a scanning electron microscope or a transmission electron microscope. Hereinafter, an evaluation method using a scanning electron microscope will be described. First, the granular filler was fixed on a sample stage of SEM, and the shape was observed from the direction of the plane having the largest observation area of the granular filler by increasing the observation magnification to the maximum extent that only 1 particle entered the visual field. For example, the surface having the largest area for black lead observation corresponds to a cleavage plane. Next, the sample stage was rotated to observe the granular packing from the surface having the smallest observation area. For example, if the particulate filler is black lead, it corresponds to the laminated cross section of the plate-like structure of black lead. In the above observation, the smallest inscribed circle is set on the surface of the granular filler having the largest observation area, and the diameter thereof is measured and defined as the "major axis" of the granular filler. In addition, for the surface having the smallest observation area of the particulate filler, the pitch of the parallel lines drawn so that the 2 parallel lines are closest to each other and the particulate filler is sandwiched therebetween is defined as the "minor axis". This operation was performed on 100 arbitrarily selected particulate fillers, and the average value was calculated to obtain the aspect ratio.
From the viewpoint of forming a conductive path through the particulate filler by the fibrous filler and improving the electrical loss of the electromagnetic wave, the upper limit of the aspect ratio of the fibrous filler is, for example, preferably 60 or less, more preferably 50 or less, and still more preferably 40 or less.
From the same viewpoint as the above upper limit, the lower limit of the aspect ratio of the fibrous filler is, for example, preferably 5 or more, more preferably 10 or more, and still more preferably 20 or more.
As the conductive filler, 2 or more types of fillers having different aspect ratios are preferably used. Among these, the conductive filler of 2 or more types preferably contains, for example, the fibrous filler and the particulate filler described above. As the 2 or more kinds of conductive fillers, specifically, particles of graphite and carbon fibers are preferably contained. This can improve the electromagnetic wave shielding performance of the semiconductor device. Although the detailed mechanism is not clear, it is presumed that the electric loss of the electromagnetic wave can be further increased by forming the conductive path with 2 or more kinds of conductive fillers having different aspect ratios.
When the conductive filler of 2 or more types includes a particulate filler and a fibrous filler, the shape of the particles is preferably, for example, a scale-like shape. This enables the conductive path to be formed appropriately. As a specific combination of the particulate filler and the fibrous filler, graphite is preferably contained as the particulate filler and carbon fiber is preferably contained as the fibrous filler.
When the fibers and the particles are contained as the 2 or more kinds of conductive fillers, the lower limit of the content of the fibers is, for example, preferably 10 mass% or more, and more preferably 15 mass% or more with respect to the total amount of the solid components of the second thermosetting resin composition. Thus, the fibers as the conductive filler can be appropriately dispersed in the second thermosetting resin composition, and a conductive path suitable for improving the electromagnetic wave shielding property can be formed.
When the fibers and the particles are contained as 2 or more kinds of the conductive fillers, the upper limit of the content of the fibers is preferably 55 mass% or less, and more preferably 50 mass% or less, for example, with respect to the total amount of the solid components of the second thermosetting resin composition. This is preferable in view of being able to maintain the swirl length of the second thermosetting resin composition appropriately.
When the fibers and the particles are contained as the 2 or more kinds of conductive fillers, the lower limit of the content of the particles is preferably 20 mass% or more, and more preferably 30 mass% or more, with respect to the content of the fibers in the second thermosetting resin composition, for example. Thus, by filling the particles between the plurality of fibers, the plurality of fibers can form a conductive path more appropriately through the particles.
When the fibers and the particles are contained as the 2 or more kinds of conductive fillers, the upper limit of the content of the particles is preferably 150 mass% or less, more preferably 145 mass% or less, and further preferably 70 mass% or less, with respect to the content of the fibers in the second thermosetting resin composition, for example. Thus, the fibers are dispersed in the second thermosetting resin composition appropriately, and a conductive path suitable for improving electromagnetic wave shielding properties can be formed.
The other filler having a smaller aspect ratio than the fibrous filler may include one or more kinds of powder or granules of carbon materials selected from graphite, carbon black, carbon, coke, diamond, carbon nanotubes, black lead, fullerene, and the like. Among these, from the viewpoint of improving the balance between mechanical properties and electromagnetic wave shielding properties, the carbon material is preferably contained, and at least one of graphite and carbon black is more preferably contained.
In the second thermosetting resin composition according to the present embodiment, a colorant such as carbon black or iron oxide red; low-stress agents such as silicone oil and silicone rubber; release agents such as natural waxes including carnauba wax, synthetic waxes including toluene diisocyanate-modified oxidized waxes, higher fatty acids such as stearic acid and zinc stearate, and metal salts thereof, or esters such as paraffin wax and diethanolamine/ditartrate; flame retardants such as aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate and phosphazene, and various additives such as antioxidants.
The first thermosetting resin composition preferably contains an epoxy resin, a curing agent, a curing accelerator, and an inorganic filler. From the viewpoint of handling properties, the form of the first thermosetting resin composition is preferably processed into a powder-granular, pastille or sheet form. That is, the form of the first thermosetting resin composition is preferably a solid state.
The epoxy resin contained in the first thermosetting resin composition may be all of monomers, oligomers, and polymers having 2 or more epoxy groups in 1 molecule, regardless of the molecular weight and molecular structure thereof. Specific examples of such epoxy resins include one or two or more compounds selected from the following: bisphenol epoxy resins such as bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol E epoxy resin, bisphenol S epoxy resin, hydrogenated bisphenol a epoxy resin, bisphenol M epoxy resin (4,4 ' - (1,3-phenylenediisopropylidene) bisphenol epoxy resin), bisphenol P epoxy resin (4,4 ' - (1,4-phenylenediisopropylidene) bisphenol epoxy resin), and bisphenol Z epoxy resin (4,4 ' -cyclohexadienebisphenol epoxy resin); novolac-type epoxy resins such as phenol novolac-type epoxy resins, bromophenol novolac-type epoxy resins, cresol novolac-type epoxy resins, tetraphenolethane novolac-type epoxy resins, and novolac-type epoxy resins having a condensed ring aromatic hydrocarbon structure; biphenyl type epoxy resin; aralkyl type epoxy resins such as a xylylene type epoxy resin and a phenol aralkyl type epoxy resin having a biphenylene skeleton; epoxy resins having a naphthalene skeleton such as a naphthylene ether-type epoxy resin, a naphthol-type epoxy resin, a naphthalene-type epoxy resin, a naphthalenediphenol-type epoxy resin, a 2-to 4-functional epoxy-type naphthaldehyde resin, a binaphthyl-type epoxy resin, and a naphthylaralkyl-type epoxy resin; an anthracene-type epoxy resin; phenoxy type epoxy resins; a dicyclopentadiene type epoxy resin; norbornene-type epoxy resins; an adamantane type epoxy resin; heterocyclic epoxy resins such as fluorene-based epoxy resin, phosphorus-containing epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, bisphenol a novolac-type epoxy resin, bixylenol-type epoxy resin, trishydroxyphenylmethane-type epoxy resin, tetrahydroxyphenylethane-type epoxy resin, triglycidyl isocyanurate, and the like; glycidyl amines such as N, N '-tetraglycidyl m-xylylenediamine, N' -tetraglycidyl bisaminomethylcyclohexane and N, N-diglycidylaniline, copolymers of glycidyl (meth) acrylate and compounds having an ethylenically unsaturated double bond, epoxy resins having a butadiene structure, diglycidyl etherate of bisphenol, diglycidyl etherate of naphthalenediol, and glycidyl etherate of phenol. Among them, bisphenol type epoxy resins such as aralkyl type epoxy resins, biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins and tetramethyl bisphenol F type epoxy resins, and stilbene type epoxy resins preferably have crystallinity. This improves reflow resistance of the semiconductor device and suppresses warpage.
The content of the epoxy resin is preferably 3% by mass or more, and more preferably 5% by mass or more, based on the total solid content of the first thermosetting resin composition. When the content of the epoxy resin is not less than the lower limit, it is possible to contribute to improvement of adhesion between the sealing material formed using the first thermosetting resin composition and the semiconductor element. On the other hand, the content of the epoxy resin is, for example, preferably 20 mass% or less, and more preferably 17 mass% or less, with respect to the total solid content of the first thermosetting resin composition. By setting the content of the epoxy resin to the upper limit or less, the heat resistance and the moisture resistance of the sealing material formed using the first thermosetting resin composition can be improved. Therefore, the moisture resistance reliability and reflow resistance of the semiconductor device can be improved by the first thermosetting resin composition having the content of the epoxy resin within the above numerical range.
As described above, the first thermosetting resin composition according to the present embodiment may contain a curing agent. This improves the fluidity and workability of the resin composition.
The curing agent according to the present embodiment can be roughly classified into 3 types, for example, an addition polymerization type curing agent, a catalytic type curing agent, and a condensation type curing agent.
Specific examples of the addition polymerization type curing agent used as the curing agent include aliphatic polyamines such as Diethylenetriamine (DETA), triethylenetetramine (TETA), and m-xylylenediamine (MXDA), aromatic polyamines such as diaminodiphenylmethane (DDM), m-phenylenediamine (MPDA), and diaminodiphenylsulfone (DDS), and polyamine compounds such as Dicyandiamide (DICY) and organic acid dihydrazide; alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), and acid anhydrides including aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA); phenolic resin curing agents such as novolak-type phenolic resins and polyvinyl phenols; polythiol compounds such as polysulfides, thioesters, and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; and organic acids such as carboxylic acid-containing polyester resins.
Specific examples of the catalyst-type curing agent include tertiary amine compounds such as Benzyldimethylamine (BDMA) and 2,4,6-tris-dimethylaminomethylphenol (DMP-30); imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI 24); lewis acids such as BF3 complexes, etc.
Specific examples of the condensation-type curing agent include resol-type phenolic resins; urea resins such as methylol group-containing urea resins; melamine resins such as methylol group-containing melamine resins, and the like.
Among these, a phenol resin curing agent is preferable from the viewpoint of improving the balance among flame resistance, moisture resistance, electrical characteristics, curability, storage stability, and the like. The phenolic resin curing agent may be any of monomers, oligomers, and polymers having 1 molecule and 2 or more phenolic hydroxyl groups, and the molecular weight and molecular structure thereof are not particularly limited.
Specific examples of the phenolic resin curing agent include novolak resins such as phenol novolak resin, cresol novolak resin, and bisphenol novolak resin; polyvinyl phenol; polyfunctional phenol resins such as biphenyl aralkyl type phenol resins and triphenol methane type phenol resins; modified phenolic resins such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; aralkyl-type resins such as phenol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton and naphthol aralkyl resins having a phenylene skeleton and/or a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F. These may be used alone in 1 kind, or may be used in combination of 2 or more kinds. Among these, a polyfunctional phenol resin is preferable from the viewpoint of improving the reliability of a semiconductor device under high-temperature and high-humidity environmental conditions.
The content of the curing agent in the first thermosetting resin composition according to the present embodiment is preferably 2 mass% to 15 mass%, more preferably 3 mass% to 13 mass%, and most preferably 4 mass% to 11 mass% with respect to the entire first thermosetting resin composition. When the content of the curing agent is not less than the lower limit, the first thermosetting resin composition having sufficient fluidity can be obtained, and the moldability can be improved. In addition, by setting the content of the curing agent to be not more than the above upper limit, moisture resistance reliability and reflow resistance of the semiconductor device can be improved.
The first thermosetting resin composition according to the present embodiment may further contain a filler. Such a filler may be an inorganic filler or an organic filler which is generally used for a semiconductor sealing material. Specifically, examples of the inorganic filler include silica such as fused crushed silica, fused spherical silica, crystalline silica, and secondary aggregation silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica; glass fibers, and the like. Examples of such organic fillers include organic silica powder and polyethylene powder. These fillers may be used alone in 1 kind, or may be used in combination of 2 or more kinds. Among these, inorganic fillers are preferable, and fused spherical silica is particularly preferable.
In addition, the shape of the filler is preferably as spherical as possible and has a wide particle size distribution in order to suppress an increase in melt viscosity of the first thermosetting resin composition and to increase the content of the filler.
In addition, by mixing materials having different particle sizes, the inorganic loading amount can be increased. From the viewpoint of filling properties around the semiconductor element, the average particle diameter d50 of the filler is preferably 0.01 μm to 150 μm, more preferably 0.1 μm to 100 μm, and still more preferably 0.5 μm to 50 μm. In this way, the flowability of the resin composition can be controlled to be in a good state. In addition, in the present embodiment, from the viewpoint of improving the fluidity of the first thermosetting resin composition and improving the mechanical strength of the manufactured semiconductor device, it is preferable to use a filler having an average particle diameter d50 of 5 μm or less and a filler having an average particle diameter d50 of 10 μm or more in combination.
The average particle diameter d50 of the inorganic filler can be measured, for example, by using a laser diffraction particle size distribution measuring apparatus (LA-500, manufactured by HORIBA Co., ltd.).
The content of the filler in the first thermosetting resin composition according to the present embodiment is, for example, preferably 35% by mass or more and 94% by mass or less, more preferably 50% by mass or more and 93% by mass or less, and most preferably 65% by mass or more and 90% by mass or less, with respect to the entire first thermosetting resin composition. When the content of the filler is not less than the lower limit, the moisture absorption resistance and the reflow resistance can be improved more effectively while the low moisture absorption property and the low thermal expansion property are improved. In addition, when the content of the filler is not more than the above upper limit, it is possible to suppress a decrease in moldability due to a decrease in fluidity of the encapsulating epoxy resin composition, a shift of a bonding wire due to a high viscosity, and the like.
The first thermosetting resin composition according to the present embodiment may further contain a curing accelerator.
The curing accelerator may be any one that can accelerate a crosslinking reaction between an epoxy group of the epoxy resin and a curing agent (for example, a phenolic hydroxyl group of a phenol resin curing agent), and a compound used in a general epoxy resin composition for semiconductor encapsulation may be used. Examples of the curing accelerator include compounds containing a phosphorus atom such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphoric acid betaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound; amidines and tertiary amines exemplified by 1,8-diazabicyclo- [5.4.0] -undecene-7, benzyldimethylamine, 2-methylimidazole, and nitrogen atom-containing compounds such as the quaternary salts of the amidines and amines, and the like can be used alone in 1 kind or in combination of 2 or more kinds.
The content of the curing accelerator is preferably 0.05% by mass or more and 1% by mass or less, and more preferably 0.1% by mass or more and 0.8% by mass or less, with respect to the entire first thermosetting resin composition. When the content of the curing accelerator is not less than the lower limit, the curability of the first thermosetting resin composition can be suppressed from decreasing. In addition, by setting the content of the curing accelerator to the upper limit or less, it is possible to suppress a decrease in fluidity of the first thermosetting resin composition.
In addition to the above-mentioned components, one or more additives selected from a coupling agent, a leveling agent, a colorant, a release agent, a low-stress agent, a photosensitizer, an antifoaming agent, an ultraviolet absorber, a foaming agent, an antioxidant, a flame retardant, an ion scavenger, and the like may be added to the first thermosetting resin composition as needed. Examples of the coupling agent include epoxy silane coupling agents, cationic silane coupling agents, aminosilane coupling agents, 3-mercaptopropyltrimethoxysilane coupling agents, gamma-glycidoxypropyltrimethoxysilane coupling agents, N-phenyl-3-aminopropyltrimethoxysilane coupling agents, silane coupling agents such as mercaptosilane coupling agents, titanate coupling agents, silicone oil coupling agents, and the like. Examples of the leveling agent include acrylic copolymers. Examples of the colorant include carbon black. Examples of the release agent include synthetic waxes such as natural waxes and montanic acid esters, higher fatty acids or metal salts thereof, paraffin waxes, and oxidized polyethylene. Examples of the low-stress agent include silicone oil and silicone rubber. Examples of the ion scavenger include hydrotalcite. Examples of the flame retardant include aluminum hydroxide.
The present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within a range that can achieve the object of the present invention are also included in the present invention.
The embodiments of the present invention have been described above with reference to the drawings, but these are merely examples of the present invention, and various configurations other than the above-described configurations may be adopted.
Examples of the reference method are described below.
1. A semiconductor device, comprising:
a semiconductor element;
a first sealing material which seals the semiconductor element so as to cover a surface of the semiconductor element, the first sealing material being formed from a cured product of a first thermosetting resin composition; and
a second sealing material which seals the first sealing material so as to cover a surface of the first sealing material, and which is formed from a cured product of a second thermosetting resin composition different from the first thermosetting resin composition,
the second thermosetting resin composition is an epoxy resin composition containing an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler.
2. The semiconductor device according to claim 1, wherein the entire surface region of the first sealing material is covered with the second sealing material so that the entire surface region of the first sealing material is not exposed.
3. The semiconductor device according to claim 1 or 2, wherein the conductive filler contains carbon as a main component.
4. The semiconductor device according to any one of claims 1 to 3, wherein a content of the conductive filler is 35% by mass or more and 65% by mass or less with respect to a total amount of solid components of the second thermosetting resin composition.
5. The semiconductor device according to any one of claims 1 to 4, wherein the conductive filler contains at least 2 or more carbon materials having different aspect ratios.
6. The semiconductor device according to any one of claims 1 to 5, wherein the conductive filler contains graphite and carbon fiber.
7. The semiconductor device according to any one of claims 1 to 6, wherein an absolute value of L1-L2 is 30ppm or less, where L1 is a coefficient of linear expansion at 25 ℃ of the first sealing material, and L2 is a coefficient of linear expansion at 25 ℃ of the second sealing material.
8. The semiconductor device according to any one of claims 1 to 7, wherein the first thermosetting resin composition contains an epoxy resin, a curing agent, a curing accelerator, and a filler.
9. The semiconductor device according to any one of claims 1 to 8, wherein a structure body including the semiconductor element, the first sealing material, and the second sealing material is formed over a substrate.
10. A method of manufacturing a semiconductor device, comprising:
forming a first sealing material by sealing the semiconductor element with a cured product of a first thermosetting resin composition so as to cover a surface of the semiconductor element; and
a step of sealing the first sealing material with a cured product of a second thermosetting resin composition different from the first thermosetting resin composition so as to cover the surface of the first sealing material to form a second sealing material,
the second thermosetting resin composition is an epoxy resin composition containing an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler.
11. An epoxy resin composition for semiconductor encapsulation, which is used for forming a second encapsulating material for encapsulating a first encapsulating material so as to cover a surface of the first encapsulating material, wherein the first encapsulating material is formed by curing a thermosetting resin composition so as to cover a surface of a semiconductor element,
the epoxy resin composition for sealing a semiconductor comprises an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler.
12. A resin combination comprising:
a molding material group composed of the first thermosetting resin composition for forming the first sealing material in the semiconductor device according to any one of 1.9.; and
a molding material set composed of the second thermosetting resin composition for forming the second sealing material in the semiconductor device described in any one of 1.9.
Examples
The present invention will be described below with reference to examples and comparative examples, but the present invention is not limited to these examples.
< preparation of the first thermosetting resin composition >
For each of examples 1 to 6 and comparative example 1, a resin composition for sealing was prepared as follows. First, the raw materials blended in accordance with table 1 were mixed using a mixer at normal temperature, and then roll-kneaded at 70 to 100 ℃. Next, the obtained kneaded product was cooled and then pulverized, thereby obtaining a resin composition in a powder form as a first thermosetting resin composition. Details of each component in table 1 are described later. In addition, the unit in table 1 is mass%.
< preparation of second thermosetting resin composition >
For each of examples 1 to 6 and comparative example 2, a resin composition for sealing was prepared as follows. First, conductive fillers 1 to 3, which were surface-treated with a coupling agent 2 in advance at the blending amounts shown in table 1, were prepared. Next, the raw materials blended in accordance with table 1 were mixed using a mixer at normal temperature, and then roll-kneaded at 70 to 100 ℃. Next, the obtained kneaded product was cooled and then pulverized, thereby obtaining a resin composition in a powder form as a second thermosetting resin composition. Details of each component in table 1 are described later. In addition, the unit in table 1 is mass%.
The surface treatments of the conductive fillers 1 to 3 with the coupling agent 2 were performed as follows.
First, the conductive filler is put into a mixer, and stirring is started. Subsequently, the coupling agent 2 was put into the mixer, and the stirring was continued for 3 minutes. Thus, a mixture of the conductive filler and the coupling agent 2 was obtained. Next, the obtained mixture was taken out of the mixer and left for a predetermined time. In this manner, conductive fillers 1 to 3 surface-treated with the coupling agent 2 were produced.
(epoxy resin)
Epoxy resin 1: biphenyl type epoxy resin (YX 4000K, mitsubishi chemical Co., ltd.)
Epoxy resin 2: phenol aralkyl type epoxy resin having biphenylene skeleton (NC-3000, made by Nippon Kabushiki Kaisha)
Epoxy resin 3: bisphenol A type epoxy resin (YL 6810, mitsubishi chemical Co., ltd.)
Epoxy resin 4: a mixture of a phenol aralkyl type epoxy resin having a biphenylene skeleton and a biphenyl type epoxy resin (CER-3000-L, made by Nippon chemical Co., ltd.)
(Filler)
Filler 1: fused spherical silica (FB-950 FC, manufactured by electrochemical Co., ltd., average particle diameter d50:22 μm)
Filler 2: fused spherical silica (FB-105 FC, average particle diameter d50:12 μm, manufactured by electrochemical Co., ltd.)
Filler 3: fused spherical silica (FB-35, manufactured by electrochemical Co., ltd., average particle diameter d50:10 μm)
Filler 4: fused spherical silica (SO-25R, average particle diameter d50:0.5 μm, manufactured by Admatechs Co., ltd.)
Filler 5: fused spherical silica (SO-32R, average particle diameter d50:1 μm, manufactured by Admatechs Co., ltd.)
(curing agent)
Curing agent 1: phenol aralkyl resin having biphenylene skeleton (MEH-7851 SS, manufactured by Minghe Kabushiki Kaisha)
Curing agent 2: novolac type phenol resin (PR-HF-3, manufactured by Sumitomo Bakko Co., ltd.)
Curing agent 3: phenol aralkyl resin having a biphenylene skeleton (GPH-65, manufactured by Nippon Kagaku K.K.)
(curing accelerators)
Curing accelerator 1: a curing accelerator represented by the following formula (1)
The method for producing the curing accelerator 1 is as follows.
First, a separable flask (separable flash) equipped with a cooling tube and a stirrer was charged with 2,3-dihydroxynaphthalene 12.81g (0.080 mol), tetraphenylphosphonium bromide 16.77g (0.040 mol) and methanol 100ml, and dissolved by uniform stirring. Next, a sodium hydroxide solution prepared by dissolving 1.60g (0.04 mL) of sodium hydroxide in 10mL of methanol was slowly dropped into the separable flask. The crystal thus precipitated was filtered, washed with water, and vacuum-dried to obtain curing accelerator 1.
Curing accelerator 2: a curing accelerator represented by the following formula (2)
The method for producing the curing accelerator 2 is as follows.
First, a separable flask equipped with a cooling tube and a stirrer was charged with 4,4' -bisphenol S37.5 g (0.15 mol) and 100ml of methanol, and the mixture was dissolved by stirring at room temperature. Subsequently, a solution prepared by dissolving 4.0g (0.1 mol) of sodium hydroxide in 50mL of methanol in advance was added under stirring. Subsequently, a solution prepared by dissolving 41.9g (0.1 mol) of tetraphenylphosphonium bromide in 150mL of methanol was added. After that, stirring was continued for a while, and after adding 300mL of methanol, the solution in the separable flask was added dropwise to a large amount of water with stirring, thereby obtaining a white precipitate. The precipitate was filtered and dried to obtain curing accelerator 2 as white crystals.
Curing accelerator 3: a curing accelerator represented by the following formula (3)
The method for producing the curing accelerator 3 is as follows.
First, 249.5g of phenyltrimethoxysilane and 3238 g of 2,3-dihydroxynaphthalene were charged into a flask charged with 1800g of methanol to dissolve the respective components. Then, 231.5g of a 28 mass% sodium methoxide/methanol solution was added dropwise to the flask at room temperature with stirring. Subsequently, a solution prepared by dissolving tetraphenylphosphonium bromide 503.0g in methanol 600g in advance was added dropwise under stirring at room temperature, followed by mixing and precipitation of crystals. The crystal thus obtained was filtered, washed with water, and vacuum-dried to obtain a peach white crystal of the curing accelerator 3.
(conductive Filler)
Conductive filler 1: flaky graphite (PB-90, average particle size 15 μm, from Xicun Black lead corporation)
Conductive filler 2: carbon fiber (manufactured by Mitsubishi Yang Zhushi, dialead K223HM, 200 μm long diameter and 5 μm short diameter)
Conductive filler 3: carbon fiber (DKD, 200 μm long diameter and 10 μm short diameter, manufactured by Cytec Engineered Materials Inc.)
Among them, it was confirmed that the aspect ratios of the conductive fillers 1 to 3 were different.
(mold releasing agent)
Mold release agent 1: stearic acid (SR-Sakura manufactured by Nichiki Co., ltd.)
Mold release agent 2: toluene diisocyanate-modified oxidized wax (HAD-6548G, manufactured by Japan Paraffin Co., ltd.)
Mold release agent 3: diethanolamine ditartrate (ITOHWAX TP NC-133, available from Ito oil Co., ltd.)
Release agent 4: glycerol tri-montanic acid ester (produced by Clariant Japan, licolub WE-4)
Release agent 5: oxidized polyethylene wax (Licowax PED191 manufactured by Clariant Japan Co., ltd.)
(others)
Flame retardant: aluminum hydroxide (manufactured by Sumitomo chemical Co., ltd., CL-303)
The colorant: carbon black (carbon #5, mitsubishi chemical Co., ltd.)
Low-stress agents: alkyl-modified silicone oil (XZ-5600, manufactured by Momentive Performance Materials Japan Co., ltd.)
Coupling agent 1: 3-mercaptopropyltrimethoxysilane (S810, manufactured by CHISSO Co., ltd.)
Coupling agent 2: n-phenyl-3-aminopropyltrimethoxysilane (KBM-573, manufactured by shin-Etsu chemical Co., ltd.)
< production of semiconductor device according to embodiments 1 to 6 >
According to the method of the embodiment, the semiconductor device shown in fig. 1 is manufactured. First, a semiconductor element (20 mm × 20 mm) mounted on a substrate was sealed and molded using a first thermosetting resin composition, thereby producing a primary package. The molding of the first sealing material comprising the cured product of the first thermosetting resin composition was carried out using a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes. Next, the obtained primary package was used as an insert (insert), and the insert was sealed and molded using a second thermosetting resin composition, thereby producing a secondary package. The molding of the second sealing material comprising the cured product of the second thermosetting resin composition was carried out using a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes. After that, the obtained secondary package was post-cured (post cure) at 175 ℃ for 4 hours, to obtain the semiconductor device shown in fig. 1.
Production of semiconductor device of comparative example 1
A semiconductor device of comparative example 1 having the same configuration as that of the semiconductor device of example 1 was produced, except that the first thermosetting resin composition was used to mold the structures (sealing materials) corresponding to the first sealing material 10 and the second sealing material 20 in the semiconductor device of example 1 at one time.
In the production of the semiconductor device of comparative example 1, a structure (sealing material) corresponding to the first sealing material 10 and the second sealing material 20 shown in fig. 1 was produced by integrally molding a semiconductor element (20 mm × 20 mm) mounted on a substrate as an insert with the use of a first thermosetting resin composition. That is, in the semiconductor device of comparative example 1, the structures (sealing materials) corresponding to the first sealing material 10 and the second sealing material 20 shown in fig. 1 are integrally formed by the cured product of the first thermosetting resin composition. Further, the semiconductor device of comparative example 1 was obtained by molding a sealing material comprising a cured product of the first thermosetting resin composition using a compression molding machine under the conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, and then post-curing (post cure) under the conditions of 175 ℃ and 4 hours.
< production of semiconductor device according to comparative example 2 >
A semiconductor device of comparative example 1 having the same configuration as that of the semiconductor device of example 1 was produced, except that the structures (sealing materials) corresponding to the first sealing material 10 and the second sealing material 20 in the semiconductor device of example 1 were once molded using the second thermosetting resin composition. That is, the semiconductor device of comparative example 2 was produced in the same manner as in comparative example 1, except that the second thermosetting resin composition was used instead of the first thermosetting resin composition to produce the sealing material.
The obtained thermosetting resin compositions and semiconductor devices were subjected to the following measurements and evaluations.
Swirl length of each thermosetting resin composition: the first thermosetting resin composition and the second thermosetting resin composition prepared in the above manner were injected into a mold for measuring a swirl length based on EMMI-1-66, respectively, under conditions of a mold temperature of 175 ℃, an injection pressure of 6.9MPa, and a dwell time of 120 seconds, using a low-pressure die-casting Machine (Kohtaki Precision Machine Co., ltd., KTS-15), and the flow length was measured. Wherein the unit is cm. The larger the value of the swirl length measured, the better the flowability of the thermosetting resin composition.
Volume resistivity of cured product of each thermosetting resin composition at 150 ℃: the volume resistivity of the cured product of each thermosetting resin composition was measured by the following method. First, each thermosetting resin composition was injection-molded using a low-pressure transfer molding Machine (Kohtaki Precision Machine co., ltd. Manufacturer, KTS-30) under conditions of a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, thereby obtaining a disc-shaped molded article having a diameter of 100mm and a thickness of 3 mm. Subsequently, the obtained disc-shaped molded article was post-cured (post cure) at 175 ℃ for 4 hours to obtain a molded article composed of a cured product of each thermosetting resin composition. Then, a main electrode having a diameter of 300mm, a guard electrode having a diameter of 32mm, and a counter electrode having a diameter of 45mm were formed on the obtained molded body using a carbon paste, to obtain a test piece for measuring volume resistivity. Then, using the obtained test piece, the volume resistivity of the cured product of each thermosetting resin composition was measured by a method in accordance with JIS K6911 using a super insulator meter (R-503, manufactured by Kayaku Motor). Wherein the unit is omega cm. The measurement conditions were set to be under an atmosphere of 150 ℃ and a voltage of 500V was applied.
Flexural strength at 260 ℃ of a cured product of each thermosetting resin composition: first, each thermosetting resin composition was injection-molded using a low-pressure transfer molding Machine (Kohtaki Precision Machine co., ltd. Manufacturer, KTS-30) under conditions of a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, to obtain a molded article having a length of 15mm × a width of 10mm × a thickness of 4 mm. Subsequently, the obtained molded article was post-cured (post cure) at 175 ℃ for 4 hours to obtain a test piece composed of a cured product of each thermosetting resin composition. Next, the bending strength of the obtained test piece was measured in an atmosphere of 260 ℃ by a method according to JIS K6911. Wherein the unit is MPa.
Linear expansion coefficient at 25 ℃ of cured product of each thermosetting resin composition: first, each thermosetting resin composition was injection-molded using a low-pressure transfer molding Machine (Kohtaki Precision Machine co., ltd. Product, KTS-30) under conditions of a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, to obtain a molded article having a length of 15mm × a width of 4mm × a thickness of 3 mm. Subsequently, the obtained molded article was post-cured (post cure) at 175 ℃ for 4 hours to obtain a test piece composed of a cured product of each thermosetting resin composition. Then, the obtained test piece was heated at a temperature increase rate of 5 ℃ per minute using a thermal expansion meter (manufactured by Seiko Instrument Inc., TMA-120), and the linear expansion coefficient of the cured product at 25 ℃ was measured. Wherein the unit is ppm. In table 1 below, the value of the linear expansion coefficient at 25 ℃ of the cured product of the first thermosetting resin composition is represented by L1, and the value of the linear expansion coefficient at 25 ℃ of the cured product of the second thermosetting resin composition is represented by L2.
Moldability of the second thermosetting resin composition: for examples 1 to 6, structures for evaluating moldability of the second thermosetting resin composition were produced in the following manner. First, the first thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes to obtain a primary package (mold size: 55 mm. Times.50 mm, resin thickness: 0.7mm, semiconductor element size: 20 mm. Times.20 mm, resin thickness on semiconductor element: 0.4 mm). Then, the obtained primary package was used as an insert, and the second thermosetting resin composition was molded by a compression molding machine under the conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, and then post-cured (post cure) under the conditions of 175 ℃ and 4 hours to obtain a secondary package (mold size: 60mm × 70mm, resin thickness: 0.75 mm). Next, the presence of unfilled or voids in the sealant composed of the cured product of the second thermosetting resin composition in the obtained secondary package was confirmed by using an ultrasonic imaging apparatus (Hitachi Power Solutions co., ltd., inc.). In addition, the flash at the air hole part of the secondary packaging body is confirmed by visual inspection.
However, comparative example 1 and comparative example 2 were not evaluated.
The evaluation results are as follows.
Very good: in the obtained secondary package, unfilled regions or voids were not present in the sealing material composed of the cured product of the second thermosetting resin composition.
O: in the obtained secondary package, unfilled regions or voids were present in the sealing material comprising the cured product of the second thermosetting resin composition, but the average diameter thereof was 30 μm or less.
X: in the secondary package obtained, unfilled regions or voids having an average diameter of more than 30 μm were present in the sealing material composed of the cured product of the second thermosetting resin composition.
Electromagnetic wave shielding property of cured product of the second thermosetting resin composition: first, in comparative example 1, no evaluation was performed because the second thermosetting resin composition was not prepared. In examples 1 to 6 and comparative example 2, the electromagnetic wave shielding properties of the cured product of the second thermosetting resin composition were evaluated in the following manner. First, the second thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes to obtain a plate-shaped molded article having a length of 110mm, a width of 110mm, and a thickness of 1 mm. Subsequently, the obtained plate-shaped molded article was post-cured (post cure) at 175 ℃ for 4 hours to obtain a test piece composed of a cured product of the second thermosetting resin composition. The obtained test piece was placed between a transmitting antenna and a receiving antenna of TR17301A manufactured by Advantest corporation, and the electromagnetic wave shielding property of the test piece was measured under the condition of a measurement frequency of 1 GHz. Where the unit is dB.
Electromagnetic wave shielding properties of the sealing material provided in the semiconductor device: test pieces for evaluating the electromagnetic wave shielding properties of the sealing materials provided in the semiconductor devices of examples 1 to 6 were produced in the following manner. In addition, the test piece was manufactured so that the ratio of the thickness of the cured product of the first thermosetting resin composition to the thickness of the cured product of the second thermosetting resin composition in the test piece, that is, the thickness of the cured product of the first thermosetting resin composition to the thickness of the cured product of the second thermosetting resin composition was about 14: 1.
First, the first thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes to obtain a plate-shaped molded article 1 having a length of 100mm, a width of 100mm, and a thickness of 0.933 mm. Then, the obtained plate-shaped molded article was used as an insert, and the second thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, to obtain a plate-shaped molded article 2 having a length of 110mm × a width of 110mm × a thickness of 1 mm. Subsequently, the obtained plate-shaped molded article 2 was post-cured (post cure) at 175 ℃ for 4 hours, thereby obtaining a test piece in which the ratio of the thickness of the cured product of the first thermosetting resin composition to the thickness of the cured product of the second thermosetting resin composition, i.e., the thickness of the cured product of the first thermosetting resin composition to the thickness of the cured product of the second thermosetting resin composition, was about 14: 1.
A test piece for evaluating the electromagnetic wave shielding property of the sealing material provided in the semiconductor device of comparative example 1 was produced in the following manner. Specifically, a test piece of comparative example 1 was obtained by molding a test piece of the same size as the test piece of examples 1 to 6, which test piece was composed of a cured product of a first thermosetting resin composition and a cured product of a second thermosetting resin composition, using a compression molding machine under the conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, and then post-curing (post cure) under the conditions of 175 ℃ and 4 hours.
A test piece for evaluating the electromagnetic wave shielding property of the sealing material provided in the semiconductor device of comparative example 2 was produced in the following manner. Specifically, a test piece of comparative example 2 was obtained by molding a test piece having the same size as the test pieces of examples 1 to 6, which test piece was composed of a cured product of a first thermosetting resin composition and a cured product of a second thermosetting resin composition, using a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, and then post-curing (post cure) the second thermosetting resin composition under conditions of 175 ℃ and 4 hours.
The obtained test piece was placed between a transmitting antenna and a receiving antenna of TR17301A manufactured by Advantest, and the electromagnetic wave shielding property of the test piece was measured under the condition of a measurement frequency of 1 GHz.
The evaluation results are as follows.
Very good: showing values above 15 dB.
O: showing values above 5dB and less than 15 dB.
X: showing a value of less than 5 dB.
Volume resistivity of a sealing material provided in a semiconductor device at 150 ℃: in order to evaluate the electrical insulation characteristics of the semiconductor devices of the examples and comparative examples, the volume resistivity was measured. Test pieces for measuring the volume resistivity at 150 ℃ of the sealing materials provided in the semiconductor devices of examples 1 to 6 were prepared in the following manner. In addition, the test piece was prepared such that the thickness ratio of the cured product of the first thermosetting resin composition to the cured product of the second thermosetting resin composition in the test piece was about 14: 1, which was the same as the thickness ratio of the first sealing material to the second sealing material in the semiconductor devices of examples 1 to 6.
First, the first thermosetting resin composition was molded using a low-pressure transfer molding Machine (KTS-30, kohtaki Precision Machine co., ltd.) at a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, thereby obtaining a disc-shaped molded article 1 having a diameter of 90mm and a thickness of 2.8 mm. Then, using the obtained disc-shaped molded article 1 as an insert, the second thermosetting resin composition was molded using a low-pressure transfer molding Machine (KTS-30, manufactured by Kohtaki Precision Machine co., ltd.) under conditions of a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, thereby obtaining a disc-shaped molded article 2 having a diameter of 100mm and a thickness of 3 mm. Subsequently, the obtained disc-shaped molded article 2 was post-cured (post cure) at 175 ℃ for 4 hours to obtain a test piece.
A test piece for measuring the volume resistivity at 150 ℃ of the sealing material provided in the semiconductor device of comparative example 1 was prepared in the following manner. Specifically, a test piece having the same size as the test pieces of examples 1 to 6 was obtained by molding the first thermosetting resin composition using a low-pressure transfer molding Machine (Kohtaki Precision Machine co., ltd. Product, KTS-30) at a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, and then post-curing (post cure) at a temperature of 175 ℃ for 4 hours.
A test piece for evaluating the electromagnetic wave shielding property of the sealing material provided in the semiconductor device of comparative example 2 was produced in the following manner. Specifically, a test piece having the same size as the test pieces of examples 1 to 6 was obtained by molding the second thermosetting resin composition using a low-pressure transfer molding Machine (Kohtaki Precision Machine co., ltd. Product, KTS-30) at a mold temperature of 175 ℃, an injection pressure of 8.3MPa, and a curing time of 2 minutes, and then post-curing (post cure) at a temperature of 175 ℃ for 4 hours.
Next, a main electrode having a diameter of 30mm, a guard electrode having a diameter of 32mm, and a counter electrode having a diameter of 45mm were formed on the obtained test piece using the carbon paste. Then, the volume resistivity was measured under a DC voltage of 500V in an atmosphere of 150 ℃. The unit is Ω · cm.
Adhesion between sealing materials: the first thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes to obtain a primary package (mold size: 55 mm. Times.50 mm, resin thickness: 0.7mm, semiconductor element size: 20 mm. Times.20 mm, resin thickness on semiconductor element: 0.4 mm). Then, the obtained primary package was used as an insert, and the second thermosetting resin composition was molded by a compression molding machine under conditions of a mold temperature of 175 ℃, a molding pressure of 8.3MPa, and a curing time of 2 minutes, and then post-cured (post cure) was performed under conditions of 175 ℃ and 4 hours to obtain a secondary package (mold size: 60 mm. Times.70 mm, resin thickness: 0.75 mm).
The evaluation results are as follows.
O: peeling did not occur at the bonding interface between the cured product of the first thermosetting resin composition and the cured product of the second thermosetting resin composition.
X: peeling occurred at the bonding interface between the cured product of the first thermosetting resin composition and the cured product of the second thermosetting resin composition.
Adhesion between sealing materials in the semiconductor device after the reflow heat resistance test: in order to evaluate the reflow resistance of the semiconductor devices of the examples and comparative examples, the adhesion between the sealing materials after the reflow heat resistance test was evaluated by the following method. First, the semiconductor devices of examples 1 to 6 were subjected to humidification treatment at 30 ℃ for 60% RH and 192 hours. Next, the semiconductor device was passed 3 times through reflow soldering with a temperature profile having a maximum temperature of 260 ℃. Then, the obtained semiconductor device was subjected to nondestructive ultrasonic flaw detection test (SAT) using an ultrasonic microscope, and the state of separation at the bonding interface between the first sealing material made of a cured product of the first thermosetting resin composition and the second sealing material made of a cured product of the second thermosetting resin composition was tested.
The evaluation results are as follows.
Very good: without peeling at the joint interface (complete sealing of the two sealing materials)
O: although slight peeling was observed, the level was such that there was no practical problem.
The evaluation results of the above evaluation items are shown in table 1 below together with the blending ratio of each component.
[ TABLE 1 ]
As shown in table 1, the test pieces of the respective examples, which were composed of the cured product of the first thermosetting resin composition and the cured product of the second thermosetting resin composition, were excellent in the balance of the electromagnetic wave shielding property and the electrical insulating property. In addition, the semiconductor devices of the respective examples are also superior to the semiconductor devices of comparative examples 1 and 2 in the balance of electromagnetic wave shielding characteristics and electrical insulation characteristics.
This application claims 2016-139402 as a base priority from Japanese application laid-open at 7, 14.d., the entire disclosure of which is incorporated herein by reference.
Claims (12)
1. A semiconductor device is characterized by comprising:
a semiconductor element;
a first sealing material which seals the semiconductor element so as to cover a surface of the semiconductor element, and which is formed from a cured product of a first thermosetting resin composition; and
a second sealing material which seals the first sealing material so as to cover a surface of the first sealing material, and which is formed from a cured product of a second thermosetting resin composition different from the first thermosetting resin composition,
the second thermosetting resin composition is an epoxy resin composition comprising an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler,
the conductive filler includes a particulate filler and a fibrous filler,
the granular filler is graphite, and the granular filler is graphite,
the fibrous filler is carbon fiber, and the fibrous filler is carbon fiber,
the content of the carbon fiber in the second thermosetting resin composition is 10 to 50 mass% based on the total solid content of the second thermosetting resin composition,
the content of the graphite in the second thermosetting resin composition is 20 mass% or more and 150 mass% or less with respect to the content of the fiber in the second thermosetting resin composition.
2. The semiconductor device according to claim 1, wherein:
the conductive filler contains carbon in an amount of 50 mass% or more relative to the total amount of the conductive filler.
3. The semiconductor device according to claim 1 or 2, wherein:
the content of the conductive filler in the second thermosetting resin composition is 35 mass% or more and 65 mass% or less with respect to the total solid content of the second thermosetting resin composition.
4. The semiconductor device according to claim 1 or 2, wherein:
when the linear expansion coefficient at 25 ℃ of the first sealing material is L1 and the linear expansion coefficient at 25 ℃ of the second sealing material is L2, the absolute value of L1-L2 is 0ppm or more and 30ppm or less.
5. The semiconductor device according to claim 4, wherein:
the linear expansion coefficient L1 is smaller than the linear expansion coefficient L2.
6. The semiconductor device according to claim 1 or 2, wherein:
the first thermosetting resin composition includes an epoxy resin, a curing agent, a curing accelerator, and a filler.
7. The semiconductor device according to claim 1 or 2, wherein:
the entire surface region of the first sealing material is covered with the second sealing material so that the entire surface region of the first sealing material is not exposed.
8. The semiconductor device according to claim 1 or 2, wherein:
a structural body including the semiconductor element, the first sealing material, and the second sealing material is formed over a substrate.
9. A method for manufacturing a semiconductor device, comprising:
forming a first sealing material by sealing the semiconductor element with a cured product of a first thermosetting resin composition so as to cover a surface of the semiconductor element; and
a step of forming a second sealing material by sealing the first sealing material with a cured product of a second thermosetting resin composition different from the first thermosetting resin composition so as to cover the surface of the first sealing material,
the second thermosetting resin composition is an epoxy resin composition comprising an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler,
the conductive filler includes a particulate filler and a fibrous filler,
the granular filler is graphite, and the granular filler is graphite,
the fibrous filler is carbon fiber,
the content of the carbon fiber in the second thermosetting resin composition is 10 to 50 mass% based on the total solid content of the second thermosetting resin composition,
the content of the graphite in the second thermosetting resin composition is 20 mass% or more and 150 mass% or less with respect to the content of the fiber in the second thermosetting resin composition.
10. The method for manufacturing a semiconductor device according to claim 9, wherein:
and a step of forming the second sealing material by heat-treating the first sealing material and the second sealing material to post-cure them.
11. An epoxy resin composition for semiconductor encapsulation, characterized in that:
which is used for forming a second sealing material for sealing a first sealing material so as to cover a surface of the first sealing material, wherein the first sealing material is formed by curing a thermosetting resin composition so as to cover a surface of a semiconductor element,
the epoxy resin composition for semiconductor encapsulation comprises an epoxy resin, a phenolic resin curing agent, a curing accelerator and a conductive filler,
the conductive filler includes a particulate filler and a fibrous filler,
the granular filler is graphite, and the granular filler is graphite,
the fibrous filler is carbon fiber, and the fibrous filler is carbon fiber,
the content of the carbon fiber in the second thermosetting resin composition is 10 to 50 mass% based on the total solid content of the second thermosetting resin composition,
the content of the graphite in the second thermosetting resin composition is 20 mass% or more and 150 mass% or less with respect to the content of the fiber in the second thermosetting resin composition.
12. A resin composition, comprising:
a molding material set composed of the first thermosetting resin composition for forming the first sealing material in the semiconductor device according to any one of claims 1 to 8; and
a molding material set composed of the second thermosetting resin composition for forming the second sealing material in the semiconductor device according to any one of claims 1 to 8.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-139402 | 2016-07-14 | ||
| JP2016139402 | 2016-07-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107622980A CN107622980A (en) | 2018-01-23 |
| CN107622980B true CN107622980B (en) | 2023-02-14 |
Family
ID=61029060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710574007.8A Active CN107622980B (en) | 2016-07-14 | 2017-07-14 | Semiconductor device, method for manufacturing same, and epoxy resin composition for semiconductor encapsulation |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6891639B2 (en) |
| KR (1) | KR102394084B1 (en) |
| CN (1) | CN107622980B (en) |
| TW (1) | TWI755402B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018024832A (en) * | 2016-07-29 | 2018-02-15 | 住友ベークライト株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP6941737B2 (en) * | 2018-07-31 | 2021-09-29 | 京セラ株式会社 | Flake-shaped sealing resin composition and semiconductor device |
| JP7366538B2 (en) * | 2018-12-27 | 2023-10-23 | 住友ベークライト株式会社 | Hollow package and its manufacturing method |
| WO2020202556A1 (en) * | 2019-04-05 | 2020-10-08 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| JP7236326B2 (en) * | 2019-05-30 | 2023-03-09 | 東洋紡株式会社 | Electronic component sealing body and method for manufacturing electronic component sealing body |
| KR20220019022A (en) * | 2019-06-05 | 2022-02-15 | 바스프 에스이 | electromagnetic wave absorbing material |
| JP7434025B2 (en) * | 2019-10-02 | 2024-02-20 | 日東電工株式会社 | Resin molded product for optical semiconductor encapsulation and its manufacturing method |
| JP7476595B2 (en) * | 2020-03-18 | 2024-05-01 | 富士電機株式会社 | Semiconductor Device |
| EP4251686A1 (en) | 2020-11-30 | 2023-10-04 | Basf Se | Electromagnetic waves absorbing material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030024723A1 (en) * | 2001-06-12 | 2003-02-06 | Nitto Denko Corporation | Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition |
| JP2007287937A (en) * | 2006-04-17 | 2007-11-01 | Kyocera Chemical Corp | Resin-sealed semiconductor device and its manufacturing method |
| CN102339763A (en) * | 2010-07-21 | 2012-02-01 | 飞思卡尔半导体公司 | Method for assembling integrated circuit device |
| US20140204550A1 (en) * | 2013-01-22 | 2014-07-24 | Murata Manufacturing Co., Ltd. | Module board |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275741A (en) * | 1993-03-19 | 1994-09-30 | Toppan Printing Co Ltd | Semiconductor device |
| US20040265596A1 (en) * | 2003-04-28 | 2004-12-30 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition for semiconductor sealing and semiconductor device |
| US7170188B2 (en) * | 2004-06-30 | 2007-01-30 | Intel Corporation | Package stress management |
| US20070267737A1 (en) * | 2006-05-17 | 2007-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packaged devices and methods for forming packaged devices |
| JP5095136B2 (en) * | 2006-06-20 | 2012-12-12 | 京セラケミカル株式会社 | Manufacturing method of resin composition for semiconductor encapsulation |
| WO2016002833A1 (en) * | 2014-07-02 | 2016-01-07 | Dic株式会社 | Epoxy resin composition for electronic material, cured product thereof and electronic member |
-
2017
- 2017-05-31 JP JP2017108414A patent/JP6891639B2/en not_active Expired - Fee Related
- 2017-06-21 TW TW106120664A patent/TWI755402B/en not_active IP Right Cessation
- 2017-07-12 KR KR1020170088558A patent/KR102394084B1/en active Active
- 2017-07-14 CN CN201710574007.8A patent/CN107622980B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030024723A1 (en) * | 2001-06-12 | 2003-02-06 | Nitto Denko Corporation | Epoxy resin composition used for encapsulating semiconductor and semiconductor device using the composition |
| JP2007287937A (en) * | 2006-04-17 | 2007-11-01 | Kyocera Chemical Corp | Resin-sealed semiconductor device and its manufacturing method |
| CN102339763A (en) * | 2010-07-21 | 2012-02-01 | 飞思卡尔半导体公司 | Method for assembling integrated circuit device |
| US20140204550A1 (en) * | 2013-01-22 | 2014-07-24 | Murata Manufacturing Co., Ltd. | Module board |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107622980A (en) | 2018-01-23 |
| JP6891639B2 (en) | 2021-06-18 |
| KR102394084B1 (en) | 2022-05-04 |
| KR20180008307A (en) | 2018-01-24 |
| JP2018019067A (en) | 2018-02-01 |
| TW201804574A (en) | 2018-02-01 |
| TWI755402B (en) | 2022-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107622980B (en) | Semiconductor device, method for manufacturing same, and epoxy resin composition for semiconductor encapsulation | |
| KR102040766B1 (en) | Thermosetting resin composition, resin molded article and three-dimensional molded circuit part for LDS | |
| KR102490214B1 (en) | Manufacturing method of thermosetting resin composition for LDS and semiconductor device | |
| WO2013136769A1 (en) | Sealing resin composition and electronic device using same | |
| KR102511646B1 (en) | Resin composition for encapsulation, method for manufacturing electronic component and electronic component | |
| JP2019026715A (en) | Epoxy resin composition for collectively sealing, electronic device and method for manufacturing the same | |
| JP2021187868A (en) | Thermosetting resin composition and electronic device | |
| JP7248071B2 (en) | Encapsulating resin composition and semiconductor device | |
| KR20210108992A (en) | Resin composition for sealing, semiconductor device, and manufacturing method of a semiconductor device | |
| JP2023126267A (en) | powder | |
| KR102665491B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
| CN111989772B (en) | Resin composition for granular encapsulation, semiconductor device and method for producing same | |
| JP2021187982A (en) | Flame-retardant resin composition, and structure | |
| CN117222686B (en) | Sealing resin composition and electronic device using same | |
| CN116349008B (en) | Curable resin composition and electronic component device | |
| JP7501116B2 (en) | Flame-retardant resin composition and structure | |
| CN116670821A (en) | Sealing resin composition and semiconductor device | |
| JP2023020810A (en) | Flame-retardant resin composition and structure | |
| KR20240098466A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
| CN115340750A (en) | Resin composition for encapsulation and semiconductor device | |
| CN118946963A (en) | Sealing resin composition and method for producing single-sided sealing structure | |
| JP2021147498A (en) | Sealing resin composition and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |