CN107579015B - The method for measurement of 3D nand memory hierarchic structure critical size - Google Patents
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- 238000005259 measurement Methods 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 60
- 230000000737 periodic effect Effects 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 238000000691 measurement method Methods 0.000 claims abstract description 9
- 238000003860 storage Methods 0.000 claims abstract description 7
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
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- 238000001039 wet etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 238000013316 zoning Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004744 fabric Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005055 memory storage Effects 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The embodiment of the present application provides a kind of method for measurement of 3D nand memory hierarchic structure critical size, which includes: that key dimension measurement area is arranged in the non-wordline area of storage unit；Multistage hierarchic structure is formed in wordline area, while forming the independent hierarchic structure of multiple periodic arrangements in the measurement area, wherein the independent hierarchic structure being formed in the measurement area and the hierarchic structure critical size having the same being formed in wordline area；Critical size measurement is carried out using hierarchic structure of the optical critical dimension measurement method to the periodic distribution in the measurement area, obtained measurement result is used to characterize the critical size of wordline area hierarchic structure.The measurement method can be realized the quick nondestructive measurement to 3D nand memory hierarchic structure critical size.Thus this method can be used for the on-line monitoring of the wordline area ladder pattern etching technics of 3D nand memory.
Description
Technical field
This application involves memory technology field more particularly to a kind of 3D nand memory hierarchic structure critical sizes
Method for measurement.
Background technique
The wordline area of existing 3D nand memory storage unit is usually ladder pattern, and main technological steps are to hand over
For cvd silicon oxide and thin film sacrificial layer is stacked, then by segmentation etching, this is alternately stacked film and forms ladder pattern, ladder
The critical sizes such as wall angle and step surface width directly affect the last part technologies such as vertical metal line.
Hierarchic structure critical size in existing 3D nand memory is often measured by transmission electron microscope (TEM), because
This needs wafer carrying out slice sample preparation, belongs to destructive measurement and measurement period is longer.Common scanning electron microscope
(SEM) the step surface width etc. that can only then measure ladder pattern, can not effectively measure the critical size of entire ladder pattern.
Summary of the invention
In view of this, in order to realize that the critical size for carrying out quick nondestructive to the hierarchic structure in 3D nand memory is surveyed
Amount, this application provides a kind of method for measurement of 3D nand memory hierarchic structure critical size.
In order to achieve the above object of the invention, the application adopts the technical scheme that
A kind of method for measurement of 3D nand memory hierarchic structure critical size, comprising:
In the non-wordline area of storage unit, key dimension measurement area is set；The film in the key dimension measurement area forms knot
Structure is identical as the film composed structure in wordline area；
Multistage hierarchic structure is formed in wordline area, while forming the independent ladder of multiple periodic arrangements in the measurement area
Structure, wherein the independent hierarchic structure being formed in the measurement area has identical with the hierarchic structure being formed in wordline area
Critical size；
It is carried out using hierarchic structure of the optical critical dimension measurement method to the periodic distribution in the measurement area crucial
Dimensional measurement, obtained measurement result are used to characterize the critical size of wordline area hierarchic structure.
Optionally, described to form multistage hierarchic structure in wordline area, while multiple periodically rows are formed in the measurement area
The independent hierarchic structure of cloth, specifically includes:
Cooperate multiple chemical wet etching integrated technique successively respectively to word by multiple tracks photoetching process and per pass photoetching process
Line area and measurement area carry out chemical wet etching, to form the N grade hierarchic structure of continuous uniform distribution in wordline area, while measuring
Area forms the independent hierarchic structure of M periodic arrangement, wherein N >=2, M >=2, and N and M are integer.
Optionally, it is described by multiple tracks photoetching process and per pass photoetching process cooperate multiple tracks chemical wet etching integrated technique according to
It is secondary that chemical wet etching is carried out to wordline area and measurement area respectively, to form continuous equally distributed multistage ladder knot in wordline area
Structure, while the independent hierarchic structure for forming multiple periodic arrangements in measurement area, specifically include:
Step A: wordline area and measurement area are respectively divided into several equally distributed area segments；
Step B: photoresist is coated above wordline area and measurement area, and carries out mask patterning, respectively in wordline area
Etching window is formed in an area segments in measurement area；
Step C: wordline area and measurement area are performed etching according to etching window；
Step D: the photoresist width above finishing wordline area and measurement area makes it reduce preset value, etching window
Width increases preset value, and the preset value is the step surface width in wordline area hierarchic structure；
Step E: continue to perform etching the wordline area and measurement area according to the etching window after finishing；
Step F: circulation executes step C and D, and an area segments in the wordline area form equally distributed n grades of ladder
Structure, while the independent hierarchic structure with n grades of steps is formed in an area segments for measuring area；Wherein, n is positive whole
Number；
Step G: removal photoresist, and photoresist is coated again above wordline area and measurement area, and carries out mask pattern
Change, to form etching window in another area segments in wordline area and measurement area respectively；
Circulation executes step C to step G, until in the N grade hierarchic structure of wordline area formation continuous uniform distribution, while
Measure the independent hierarchic structure that area forms M periodic arrangement, wherein N >=2, M >=2, and N and M are integer.
Optionally, the step A specifically:
It will according to the width ladder series that photoetching process is capable of forming with together with of the ladder number of levels in wordline area, step surface
Wordline area and measurement zoning are divided into several equally distributed area segments.
Optionally, the independent hierarchic structure for measuring area and being formed at least four periodic arrangement.
Optionally, the step series for being formed in the independent hierarchic structure in each of the measurement area is no less than 2.
Optionally, being formed in the independent hierarchic structure in each of the measurement area is inverted pyramid engraved structure.
Optionally, the multiple independent hierarchic structures for the periodic arrangement being formed in measurement area arrange in the same direction.
Optionally, the multiple independent hierarchic structures for measuring the periodic arrangement in area are formed in along measurement area in matrix row
Column.
Compared to the prior art, the application has the advantages that
As seen through the above technical solutions, method for measurement provided by the present application is formed and wordline area rank in non-memory functional areas
Terraced structure has the hierarchic structure of the periodic arrangement of identical critical size.In this way, can use optical critical dimension measurement side
Method measures the critical size of the hierarchic structure of the periodic arrangement of non-memory functional areas.Because of the pass of non-memory functional areas hierarchic structure
Key size is identical as the critical size of wordline area hierarchic structure, and therefore, the critical size of non-memory functional areas hierarchic structure measures
As a result the critical size of wordline area hierarchic structure can be characterized.Therefore, the application, which will not have, is repeated cyclically structure feature
The measurement of 3D nand memory hierarchic structure critical size replaces with and the rank of its periodic arrangement with identical critical size
The measurement of the critical size of terraced structure, but because the critical size of the structure structure of periodic arrangement can be by with quick nothing
The optical critical dimension method for measurement of damage feature measures.So the measurement method can be realized to 3D nand memory rank
The quick nondestructive of terraced structural key size measures.Thus this method can be used for the wordline area ladder pattern of 3D nand memory
The on-line monitoring of etching technics.
Detailed description of the invention
In order to which the specific embodiment of the application is expressly understood, used when the application specific embodiment is described below
Attached drawing do a brief description.
Fig. 1 is that the method for measurement process of 3D nand memory hierarchic structure critical size provided by the embodiments of the present application is shown
It is intended to；
Fig. 2 is the structure top view of the 3D nand memory storage unit in the embodiment of the present application；
Fig. 3 is a specific implementation flow diagram of step S102 provided by the embodiments of the present application；
Fig. 4 A to Fig. 4 G is a series of processing procedures of a specific implementation of step S102 provided by the embodiments of the present application
Corresponding the schematic diagram of the section structure.
Appended drawing reference:
200: non-memory functional areas, 210: key dimension measurement area, 100: storage functional areas, 110: wordline area, 411 Hes
411 ': the first etching window, 421: first order step, 431: the first rectangular channels, 410: sacrificial layer, 420: silicon oxide layer, 40 Hes
40 ': photoresist, the 412 and 412 ': the second etching window, 422: first order step, 432 second rectangular channels.
Specific embodiment
The specific embodiment of the application is described in detail with reference to the accompanying drawing.
It is visible based on wide range that existing optical critical dimension (Optical Critical Dimension, OCD), which measures,
A kind of quick nondestructive method for measurement of optical diffraction can only be measured with the target size for being repeated cyclically structure, and existing
3D NAND in hierarchic structure be pyramid, do not have and be repeated cyclically structure feature, be not available optical critical dimension amount
Survey method.
In order to using the wordline area hierarchic structure in optical critical dimension method for measurement measurement 3D nand memory
Critical size, present invention design are as follows: building a cycle arrangement, with wordline area hierarchic structure with identical pass
The hierarchic structure of key size.Because of the two critical size having the same, therefore, the crucial ruler of the hierarchic structure of the periodic arrangement
The critical size of the very little wordline area hierarchic structure that can be used for characterizing in 3D nand memory.In this way, 3D NAND can be deposited
The measurement of wordline area hierarchic structure critical size in reservoir can be converted to the crucial ruler of the hierarchic structure of the periodic arrangement
Very little measurement.And therefore the critical size of the hierarchic structure of the periodic arrangement can pass through this by learning key dimension measurement
Kind conversion can with quick nondestructive measure the critical size of the hierarchic structure in 3D nand memory.
Conceived based on foregoing invention, the embodiment of the present application provides a kind of 3D nand memory hierarchic structure critical size
Method for measurement.Please refer to Fig. 1.The method for measurement of the 3D nand memory hierarchic structure critical size the following steps are included:
S101: key dimension measurement area 210 is set in the non-memory functional areas 200 of storage unit；The critical size amount
The film composed structure for surveying area is identical as the film composed structure in wordline area.
Fig. 2 is the structure top view of the 3D nand memory storage unit in the embodiment of the present application.As shown in Fig. 2, storage
Unit includes store function area 100 and non-memory functional areas 200, and wherein store function area 100 includes wordline area 110, is deposited non-
The position of storage functional areas 200 is provided with key dimension measurement area 210, wherein the internal membrane structure in key dimension measurement area 210
It is identical with the internal membrane structure in wordline area 110.Corresponding internal membrane structure is that silica/sacrificial layer is alternately laminated
Structure.
S102: multistage hierarchic structure is formed in wordline area 110, while forming multiple periodically rows in the measurement area 210
The independent hierarchic structure of cloth, wherein the independent hierarchic structure being formed in the measurement area 210 and the rank being formed in wordline area
Terraced structure critical size having the same.
The subsequent specific implementation that will be described in step S102.
S103: using optical critical dimension measurement method to the hierarchic structure of the periodic distribution in the measurement area 210
Critical size measurement is carried out, the critical size of corresponding characterization 110 hierarchic structure of wordline area of obtained critical size.
Specifically, using optical critical dimension measurement method to the ladder knot of the periodic distribution in the measurement area 210
Height, width and the angle of structure, the critical size of corresponding characterization 110 hierarchic structure of wordline area of obtained measurement result.
The above are the method for measurement of 3D nand memory hierarchic structure critical size provided by the embodiments of the present application.At this
In method for measurement, the rank for the periodic arrangement that there is identical critical size with wordline area hierarchic structure is formed in non-memory functional areas
Terraced structure.In this way, can use the ladder knot of the periodic arrangement of optical critical dimension measurement method measurement non-memory functional areas
The critical size of structure.Because the critical size of non-memory functional areas hierarchic structure is identical as the critical size of wordline area hierarchic structure,
Therefore, the critical size measurement result of non-memory functional areas hierarchic structure can characterize the critical size of wordline area hierarchic structure.
Therefore, the application replaces the measurement for not having the 3D nand memory hierarchic structure critical size for being repeated cyclically structure feature
Be changed to the measurement of the critical size of the hierarchic structure of its periodic arrangement with identical critical size, and because periodically row
The critical size of the structure structure of cloth can be by having the characteristics that the optical critical dimension method for measurement of quick nondestructive measures.
So the measurement method can be realized the quick nondestructive measurement to 3D nand memory hierarchic structure critical size.The thus party
Method can be used for the on-line monitoring of the wordline area ladder pattern etching technics of 3D nand memory.
The specific implementation of step S102 is described below in detail.
In the embodiment of the present application, step S102 can be cooperated multiple by multiple tracks photoetching process and per pass photoetching process
Chemical wet etching integrated technique successively carries out chemical wet etching to wordline area and measurement area respectively, to form continuous uniform in wordline area
The N grade hierarchic structure of distribution, while in the independent hierarchic structure for measuring M periodic arrangement of area's formation, wherein N >=2, M >=2,
And N and M are integer.
Below with reference to an example of the implementation of Fig. 3 to Fig. 4 G detailed description step S102.
Referring to Fig. 3, the specific implementation can with specifically includes the following steps:
S1021: wordline area 110 and measurement area 210 are respectively divided into several equally distributed area segments.
It is to be appreciated that because photoresist is easy to aging in etching process, so, photoresist cannot be etched continuously many times
Technique sets one of photoetching process and carries out 3 etching processes in the embodiment of the present application.So one of photoetching process can only be right
Several grades of ladders should be formed, and step number is more in the manufacture of existing 3D nand memory, so, it usually needs multiple tracks photoetching
It etches integrated technique and completes wordline area ladder pattern segmentation etching, form continuous and uniformly distributed tens of grades of steps.
In order to enable, wordline identical as the hierarchic structure in wordline area in real memory in the hierarchic structure that wordline area is formed
Area can be divided according to the ladder number of levels in wordline area, the width ladder series that photoetching process is capable of forming with together with of step surface
Area segments.
S1022: carrying out first of photoetching process, in wordline area 110 and measures coating photoresist 40 above area 210, goes forward side by side
Row mask patterning, to form 411 He of the first etching window in an area segments in wordline area 110 and measurement area 210 respectively
411 ', it is performed etching according to film of first etching window 411 and 411 ' to wordline area 110 and measurement area 210.
Photoetching is coated above wordline area 110 and measurement area 210 using photoetching process customary in the art refering to Fig. 4 A
Glue 40, exposure, form mask pattern, to form for the first quarter in an area segments in wordline area 110 and measurement area 210 respectively
Fenetre mouth 411 and 411 ', according to first etching window 411 and 411 ' using anisotropic dry etching method to wordline area
110 perform etching with area 210 is measured, to form first order step 421 in wordline area 110, while forming one measuring area 210
A first rectangular channel 431, wherein the width of the first rectangular channel 431 is equal with the width of the first etching window 411 '.In the application
In embodiment, the width of the first rectangular channel 431 is set as x.
In the embodiment of the present application, an etching technics etches away one layer of 410/ silicon oxide layer of sacrificial layer, 420 alternating layer.Such as
This, step structure includes one layer of sacrificial layer 410 and one layer of silicon oxide layer 420.In addition, the sacrificial layer in store function area
The channel hole of memory device can be already formed in the stacked structure of 410/ silica 420.As an example, sacrificial layer 410 can
Think silicon nitride layer.
S1023: the photoresist width of 210 top of finishing wordline area 110 and measurement area for the first time makes it reduce preset value
The width of y, the first etching window increase preset value y, are continued according to the first etching window after finishing to 110 He of wordline area
The film for measuring area 210 performs etching.
The preset value is the step surface width in wordline area hierarchic structure.
As shown in Figure 4 B, the width of the photoresist 40 of 210 top of finishing wordline area 110 and measurement area, reduces it in advance
If value y, the width of the first etching window increase preset value y respectively, to expose more film surfaces, according to after finishing
One etching window continues to perform etching the film in the wordline area 110 and measurement area 210, at this point, the first of wordline area 110
Grade step continues etching and forms second level step, and the film surface of exposing is etched to form first order step, by the step
After etching, the step that a step surface width is y is formed in wordline area 110, while measuring the first rectangular channel in area 210
The inverted pyramid engraved structure that comprising step and step surface width is y is formed in 431.
S1024: second finishing wordline area 110 and the width for measuring the photoresist 40 above area 210, reduce it in advance
If value y, the width of the first etching window increases preset value y, is continued according to the first etching window after finishing to the wordline area
110 perform etching with area 210 is measured.
The specific implementation of the step is identical as S1023, after having executed the step, corresponding wordline area and measurement area
Membrane structure partial cutaway schematic is as shown in Figure 4 C.
S1025: removal photoresist 40, and second photoetching process is carried out, it is coated again above wordline area and measurement area
Photoresist 40 ', and carry out mask patterning, in wordline area 110 and to measure respectively and form the in another area segments in area 210
Two etching windows 412 and 412 ' are carried out according to film of second etching window 412 and 412 ' to wordline area 110 and measurement area 210
Etching.
After having executed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 D institute for measuring area
Show.The specific implementation of the step is identical as S1022, for the sake of brevity, is not described in detail herein.It is to be appreciated that the
Two etching windows 412 are identical as 411 shape of the first etching window, 411 ' shape of the second etching window 412 ' and the first etching window
It is identical.
S1026: finishing wordline area and the 40 ' width of photoresist above measurement area for the first time make it reduce preset value y,
The width of second etching window 412 and 412 ' increases preset value, is continued pair according to the second etching window 412 and 412 ' after finishing
The wordline area 110 and measurement area 210 perform etching, to form first order step 422 in wordline area 110, while measuring
Area 210 forms second rectangular channel 432.
After having executed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 E institute for measuring area
Show.The specific implementation of the step is identical as S1022, for the sake of brevity, is not described in detail herein.
40 ' width of photoresist above S1027: second finishing wordline area and measurement area, makes it reduce preset value, the
The width of two etching windows 412 and 412 ' increases preset value, is continued according to the second etching window 412 and 412 ' after finishing to institute
It states wordline area and measures area and perform etching.
After having executed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 F institute for measuring area
Show.The specific implementation of the step is identical as S1024, for the sake of brevity, is not described in detail herein.
Pass through the above twice photoetching photoetching process and be respectively cooperating with 2 lithographic etch process and measures area's 2 repetitions of formation
Hierarchic structure.
S1028: circulation executes multiple tracks photoetching process and multiple lithographic etch process, connects until being formed in wordline area 110
Continue equally distributed N grades of hierarchic structure, while in the independent hierarchic structure (independence for measuring M periodic arrangement of the formation of area 210
Hierarchic structure is signal period structure), wherein N >=2, M >=2, and N and M are integer.Ultimately form section shown in Fig. 4 G
Structure chart.
In order to relatively accurately measure the critical size of hierarchic structure, optionally, M >=4.It is formed in the measurement area
The step series of each independent hierarchic structure is no less than 2.Being formed in the independent hierarchic structure in each of the measurement area can be for
Pyramid engraved structure.
It is to be appreciated that in the embodiment of the present application, the position for the etching window that people having a common goal's photoetching process is not formed is different,
In, people having a common goal's photoetching process is not formed in the etching window in wordline area 110 and is located in different area segments, is formed in and measures area
210 etching window is located in different area segments, and the spacing between the etching window that people having a common goal's photoetching process is not formed is identical,
It is in periodic arrangement measuring area, can periodic arrangement in the same direction, can also in the form of two-dimensional matrix the period
Property arrangement.In this way, in the same direction, the distance between two neighboring etching window is equal.
According to the different arrangement forms for measuring the etching window in area 210 are formed in, accordingly, it is formed in the week for measuring area
The arrangement form of the independent hierarchic structure of phase property arrangement is also different.Correspondingly, it is formed in and measures the more of the periodic arrangement in area
A independent hierarchic structure arranges in the same direction, can also be arranged in arrays.
It is to be appreciated that being to cooperate twice etching technique with per pass photoetching process in the specific example of above-mentioned steps S102.
In this way, measuring the inverted pyramid structure that the signal period structure formed in area 210 includes 3 floor ladder.In fact, in this Shen
Please be in embodiment, per pass photoetching process does not limit cooperation twice etching technics, can cooperate 3 times or other etch work more times
Skill.
The above are the specific embodiments of the application.
Claims (9)
1. a kind of method for measurement of 3D nand memory hierarchic structure critical size, which is characterized in that the method for measurement packet
It includes:
In the non-wordline area of storage unit, key dimension measurement area is set；The film composed structure in the key dimension measurement area with
The film composed structure in wordline area is identical；
Multistage hierarchic structure is formed in wordline area, while forming the independent ladder knot of multiple periodic arrangements in the measurement area
Structure, wherein the independent hierarchic structure being formed in the measurement area and the hierarchic structure being formed in wordline area are having the same
Critical size, and the ladder number for the independent hierarchic structure being formed in the measurement area is less than the ladder being formed in wordline area
The ladder number of structure；
Critical size is carried out using hierarchic structure of the optical critical dimension measurement method to the periodic distribution in the measurement area
Measurement, obtained measurement result are used to characterize the critical size of wordline area hierarchic structure.
2. the method according to claim 1, wherein described form multistage hierarchic structure in wordline area, while
The independent hierarchic structure for measuring area and forming multiple periodic arrangements, specifically includes:
Chemical wet etching successively is carried out to wordline area and measurement area respectively by multiple tracks photoetching process, to form N grades of ranks in wordline area
Terraced structure, while in the independent hierarchic structure for measuring M periodic arrangement of area's formation；
Wherein, per pass photoetching process cooperates multiple chemical wet etching integrated technique；
N grade ladder continuous uniform distribution in the N grades of hierarchic structure, wherein N >=2, M >=2, and N and M are integer.
3. according to the method described in claim 2, it is characterized in that, it is described by multiple tracks photoetching process successively respectively to wordline area
Chemical wet etching is carried out with area is measured, to form N grades of hierarchic structures in wordline area, while forming M periodic arrangement measuring area
Independent hierarchic structure, specifically include:
Step A: zoning will be measured and be divided into several equally distributed area segments；
Step B: photoresist is coated above wordline area and measurement area, and carries out mask patterning, respectively in n grades of wordline area rank
One end of separate step on terraced structure bottom ladder forms in etching window and an area segments in measurement area and forms etching
Window；
Step C: wordline area and measurement area are performed etching according to etching window；
Step D: the photoresist width above finishing wordline area and measurement area makes it reduce preset value, the width of etching window
Increase preset value, the preset value is the step surface width in wordline area hierarchic structure；
Step E: continue to perform etching the wordline area and measurement area according to the etching window after finishing；
Step F: circulation executes step D and E, and an area segments in the wordline area form equally distributed n grades of hierarchic structure,
The independent hierarchic structure with n grades of steps is formed in an area segments for measuring area simultaneously；Wherein, n is positive integer；
Step G: removal photoresist, and photoresist is coated again above wordline area and measurement area, and carries out mask patterning, with
One end on the bottom ladder of the n grade hierarchic structure in wordline area far from step forms etching window respectively, and is measuring area
Another area segments on form etching window；
Circulation executes step C to step G, until forming N grades of hierarchic structures in wordline area, while forming M period measuring area
Property arrangement independent hierarchic structure, wherein N >=2, M >=2, and N and M are integer.
4. according to the method described in claim 3, it is characterized in that, the step A specifically:
It will be measured according to the width ladder series that photoetching process is capable of forming with together with of the ladder number of levels in wordline area, step surface
Zoning is divided into several equally distributed area segments.
5. method according to claim 1-4, which is characterized in that the measurement area is formed at least four period
Property arrangement independent hierarchic structure.
6. method according to claim 1-4, which is characterized in that be formed in each Essential Orders for measuring area
The step series of terraced structure is no less than 2.
7. method according to claim 1-4, which is characterized in that be formed in each Essential Orders for measuring area
Terraced structure is inverted pyramid engraved structure.
8. method according to claim 1-4, which is characterized in that be formed in and measure the periodic arrangement in area
Multiple independent hierarchic structures arrange in the same direction.
9. according to the method described in claim 8, it is characterized in that, being formed in the multiple independences for measuring the periodic arrangement in area
Hierarchic structure is arranged in arrays along area is measured.
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| CN110783342B (en) * | 2019-11-05 | 2022-08-09 | 长江存储科技有限责任公司 | Method for manufacturing semiconductor device |
| CN111211051B (en) * | 2020-01-02 | 2023-01-06 | 长江存储科技有限责任公司 | Step etching method, system, electronic device and computer readable storage medium |
| CN112909008B (en) * | 2021-03-16 | 2023-06-30 | 长江存储科技有限责任公司 | Three-dimensional memory and preparation method thereof |
| CN113394127B (en) * | 2021-06-16 | 2022-04-19 | 长江存储科技有限责任公司 | Method for monitoring critical dimension of 3D memory bridging structure |
| WO2023206158A1 (en) * | 2022-04-27 | 2023-11-02 | Intel NDTM US LLC | Consolidation of staircase area etch and cmos contact area etch in 3d nand |
| CN118019434B (en) * | 2024-04-10 | 2024-07-16 | 济南大学 | A method for reducing the damage rate of piezoelectric film on silicon substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110001691A (en) * | 2009-06-30 | 2011-01-06 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| CN102088019A (en) * | 2009-10-14 | 2011-06-08 | 旺宏电子股份有限公司 | Three-dimensional laminated element with interconnection structure and manufacturing method thereof |
-
2017
- 2017-08-31 CN CN201710772343.3A patent/CN107579015B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110001691A (en) * | 2009-06-30 | 2011-01-06 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
| CN102088019A (en) * | 2009-10-14 | 2011-06-08 | 旺宏电子股份有限公司 | Three-dimensional laminated element with interconnection structure and manufacturing method thereof |
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