CN107567508A - The method of the layer for display manufacturing and the equipment of methods described are manufactured using water vapour - Google Patents
The method of the layer for display manufacturing and the equipment of methods described are manufactured using water vapour Download PDFInfo
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- CN107567508A CN107567508A CN201580078939.2A CN201580078939A CN107567508A CN 107567508 A CN107567508 A CN 107567508A CN 201580078939 A CN201580078939 A CN 201580078939A CN 107567508 A CN107567508 A CN 107567508A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention describes the method for layer and the equipment of methods described of the manufacture for multiple thin film transistor (TFT)s of display manufacturing.Methods described is included in processing gas atmosphere sputters including transparent conducting oxide layer from the target containing indium oxide.Processing gas atmosphere (222) includes water vapour, H2, and inert gas, the content of wherein water vapour is from 1% to 10%, wherein H2Content be from 2.2% to 20.0%, and the content of wherein inert gas is from 55.0% to 96.3%.Equipment (200) includes：Vacuum chamber (210)；One or more targets (220a, 220b) containing indium oxide, it is used to sputter including transparent conducting oxide layer inside vacuum chamber；Gas distributing system (230), for providing processing gas within vacuum chamber；With controller (240), it is connected to gas distributing system and is configured as performing the program code for being used for carrying out this method.
Description
Technical field
Present disclosure is related to the method and apparatus for the coated substrates in application of vacuum chamber.Especially, the disclosure
Content is related to the apparatus and method that at least one layer of sputter material is formed on the substrate for display manufacturing.
Background technology
In numerous applications, it is necessary in substrate, such as stringer on the glass substrate.Generally, in coating apparatus not
With coated substrates in chamber.For some applications, gas phase deposition technology coated substrates in a vacuum are used.Become known in substrate
If the drying method of upper deposition materials.For example, can by physical vapour deposition (PVD) (PVD) technique, chemical vapor deposition (CVD) technique or
The coated substrates such as plasma enhanced chemical vapor deposition (PECVD) technique.Generally, the technique is in substrate institute to be coated
Process equipment or processing chamber in perform.
Electronic installation, particularly electrooptical device show significantly reducing for cost in the past few years.In addition, display
In picture element density constantly increase.For TFT display, it is necessary to which a kind of high density TFT is integrated.However, although within device
Thin film transistor (TFT) (TFT) number increase, be still attempted to increase yield and attempt reduce manufacturing cost.
Therefore, it is lasting need to provide be used to adjusting during manufacture TFT display property (especially in regard to high quality and it is low into
Originally method and apparatus).
The content of the invention
In view of above, there is provided a kind of multiple film crystals according to the manufacture of independent claims for display manufacturing
The method of the layer of pipe and the equipment of methods described.It is further it is provided that a kind of including by the manufacture according to embodiment as described herein
The electronic installation of layer manufactured by the method for layer.Further advantage, feature, aspect and details will from dependent claims, from the perspective of
It is apparent in bright book and accompanying drawing.
According to the one side of present disclosure, there is provided a kind of to manufacture multiple thin film transistor (TFT)s for display manufacturing
The method of layer.Methods described is included in processing gas atmosphere sputters including transparent conducting oxide layer from the target containing indium oxide.It is described
Processing gas atmosphere includes water vapour, H2And inert gas, the content of wherein water vapour is that wherein H2's contains from 1% to 10%
Amount is from 2.2% to 20.0%, and the content of wherein inert gas is from 70.0% to 96.8%.
According to the further aspect of present disclosure, there is provided a kind of electronic installation, the electronic installation are included by basis
Layer manufactured by the method for the layer of the multiple thin film transistor (TFT)s of manufacture of embodiment as described herein.
According to the further aspect of present disclosure, there is provided a kind of equipment for depositing the layer for display manufacturing.Institute
Stating equipment includes：Vacuum chamber；One or more targets containing indium oxide, it is used to sputter transparent conductive oxide within vacuum chamber
Layer；Gas distributing system, for providing processing gas within vacuum chamber, wherein the vacuum chamber is for water vapour
First air inlet and for H2The second air inlet at be connected to gas distributing system, especially wherein described vacuum chamber enters one
Step is for O2The 3rd air inlet at be connected to gas distributing system；And controller, be connected to gas distributing system and by with
Configuration processor code is set to, wherein in configuration processor code, carries out being used to show according to the manufacture of embodiment as described herein
Show the method for the layer of multiple thin film transistor (TFT)s of device manufacture.
Brief description of the drawings
In order to which the features described above of present disclosure as described herein is understood in detail, can by reference to embodiment obtain with
The particularly description of upper brief overview.Accompanying drawing is related to the embodiment of present disclosure and is described in down：
Fig. 1 shows the signal for being used to deposit the equipment of the layer for display manufacturing according to embodiment as described herein
Figure；
Fig. 2 shows the signal for being used to deposit the equipment of the layer for display manufacturing according to embodiment as described herein
Figure；
Fig. 3 shows multiple thin film transistor (TFT)s of manufacture of the explanation according to embodiment as described herein for display manufacturing
Layer method block diagram；
Fig. 4 shows multiple thin film transistor (TFT)s of manufacture of the explanation according to embodiment as described herein for display manufacturing
Layer method block diagram.
Embodiment
With detailed reference to the various embodiments of present disclosure, one or more examples of the embodiment are in accompanying drawing
In show.In the following description of accompanying drawing, identical label refers to identical part.Hereinafter, only describe on each reality
Apply the difference of mode.Each example be provided by way of explaining present disclosure and it is not intended that limit as present disclosure
System.In addition, the feature for being illustrated and described as a part for an embodiment can be used for other embodiment, or implement with other
Mode is used in combination to produce further embodiment.This description is intended to include these modifications and variations.
In this disclosure, expression " processing gas atmosphere " is understood to be inside processing chamber housing, is particularly used for sinking
The atmosphere in the vacuum processing chamber portion of the equipment of lamination." processing gas atmosphere " can have by the volume institute inside processing chamber housing
The volume specified.
In this disclosure, abridge " H2" hydrogen is represented, especially represent Gaseous Hydrogen.
In addition, in this disclosure, abridge " O2" oxygen is represented, especially represent gaseous oxygen.
In this disclosure, expression " degree of impalpable structure " can be regarded as impalpable structure in solid-state and determine with non-nothing
The ratio of shape structure.Non-amorphous structure can be crystalline texture.Impalpable structure can be vitreous texture.
In this disclosure, expression " sheet resistance " can be regarded as by the method system according to embodiment as described herein
The resistance for the layer made.Especially, " sheet resistance " can represent the situation that wherein described layer is considered as 2d solid.It is able to should manage
Solution, expression " sheet resistance " mean plane (that is, electric current be not orthogonal to layer) of the electric current along layer.Further, sheet resistance can table
Show the situation of the resistivity of uniform layer thickness.
In fig. 1 it is illustrated that the equipment for being used to deposit the layer for display manufacturing according to embodiment as described herein
200 schematic diagram.According to embodiment as described herein, the equipment for depositing the layer for display manufacturing includes：Vacuum
Chamber 210；One or more contain indium oxide, target 220a, 220b especially containing tin indium oxide (ITO), are used within vacuum chamber
In sputtering including transparent conducting oxide layer；Gas distributing system 230, for providing processing gas within vacuum chamber；And control
Device 240, it is connected to gas distributing system 230 and is configured as configuration processor code.In configuration processor code, carry out as herein
The method of layer of the described manufacture for multiple thin film transistor (TFT)s of display manufacturing.
As being exemplarily illustrated in Fig. 1, according to the embodiment that can be combined with other embodiment as described herein, vacuum
Chamber 210 is limited by chamber wall 211 and can be in the first air inlet 231 for water vapour and for H2The second air inlet 232
Place is connected to gas distributing system 230.As shown in fig. 1, the first air inlet 231 can be via with the first mass flow controller
First conduit of 234 (for example, first valves) is connected to gas distributing system 230, and first mass flow controller is configured
For the amount for controlling the water vapour provided to processing gas atmosphere 222.Second air inlet 232 can be via with the second quality stream
Second conduit of amount controller 235 (for example, second valve) is connected to gas distributing system 230, the second mass flow control
Device is configurable for control and provided to the H of processing gas atmosphere2Amount.
According to the embodiment that can be combined with other embodiment as described herein, gas distributing system may include to be used to carry
First source of the gas of water supply steam and for providing H2The second source of the gas.Therefore, equipment as described herein can be configurable for that
Water vapour and H is provided independently in this2, to cause the vapour content of the processing gas atmosphere 222 within vacuum chamber 210
And/or H2Content can be independently controlled.In addition, gas distributing system may include the 3rd source of the gas for providing inert gas.
According to the embodiment that can be combined with other embodiment as described herein, gas distributing system may include inert gas flow control
Device (not shown) processed, the inert gas flow amount controller are configurable for control and provided to the indifferent gas of processing gas atmosphere
The amount of body.
According to the embodiment that can be combined with other embodiment as described herein, gas distributing system may include to be used to carry
For the independent source of the gas of inert gas.Independent source of the gas for providing inert gas can be configurable for, such as by by vacuum
The independent air inlet that chamber is connected with for providing the independent source of the gas of inert gas, independently of water vapour and/or H2Inertia is provided
Gas is to processing gas atmosphere.According to some embodiments that can be combined with other embodiment as described herein, for providing
The independent source of the gas of inert gas can be used for providing inert gas/water vapor mixture, the inert gas/water vapor mixture
Processing gas atmosphere to vacuum chamber for example can be provided by the first air inlet.Additionally or alternatively, for providing
The independent source of the gas of inert gas can be used for providing inert gas/H2Mixture, the inert gas/H2Mixture can for example lead to
Cross the second air inlet and processing gas atmosphere to vacuum chamber is provided.
According to the embodiment that can be combined with other embodiment as described herein, for water vapour to be provided to vacuum chamber
First source of the gas of the gas distributing system 230 of the processing gas atmosphere 222 in room 210 can provide inert gas/water vapour mixing
Thing.The partial pressure of inert gas in inert gas/water vapor mixture can be from the lower limit for the inert gas partial pressures specified herein
Selected in scope between the upper limit of inert gas partial pressures.Therefore, point of the water vapour in inert gas/water vapor mixture
Selected in the scope that pressure can be between the lower limit of the steam partial pressure specified herein and the upper limit of steam partial pressure.
According to the embodiment that can be combined with other embodiment as described herein, for by H2There is provided to vacuum chamber
Second source of the gas of the gas distributing system 230 of the processing gas atmosphere 222 in 210 can provide inert gas/H2Mixture.Lazy
Property gas/H2The partial pressure of inert gas in mixture can be from the lower limit and inert gas of the inert gas partial pressures specified herein
Selected in scope between the upper limit of partial pressure.Therefore, in inert gas/H2H in mixture2Partial pressure can be specified from herein
H2The lower limit and H of partial pressure2Selected in scope between the upper limit of partial pressure.
Exemplary reference Fig. 1, according to the embodiment that can be combined with other embodiment as described herein, vacuum chamber
210 may include the outlet port 233 that is connected to delivery channel, and the delivery channel in vacuum chamber 210 with providing vacuum
Outlet pump 236 fluidly connects.
As shown in fig. 1, the first sedimentary origin 223a and the second sedimentary origin 223b can be provided within vacuum chamber 210.It is heavy
Product source can be for example the rotatable cathode with the target to be deposited on the material on substrate.Especially, the target can be oxygen-containing
Change the target of indium tin (ITO), the target especially containing ITO 90/10.According to embodiment as described herein, ITO 90/10 include than
Example is In2O3:SnO2=90:10 indium oxide (In2O3) and tin oxide (SnO2)。
According to the embodiment that can be combined with other embodiment as described herein, negative electrode can be had in the negative electrode
There are magnet assembly 221a, 221b rotatable cathode.Therefore, using equipment as described herein, can carry out magnetron sputtering with
In sedimentary.As being exemplarily illustrated in Fig. 1, the first sedimentary origin 223a and the second sedimentary origin 223b negative electrode may be connected to power supply
250.According to the property of depositing operation, negative electrode can be connected to AC power supplies or D/C power.For example, sputtering (the example from indium oxide target
Such as it is used for transparent conductive oxide film) behavior DC sputterings can be entered.In the case of dc sputtering, the first sedimentary origin 223a may be connected to
First D/C power and the second sedimentary origin 223b may be connected to the second D/C power.Therefore, for DC sputter, the second sedimentary origin 223b and
Second sedimentary origin 223b can have independent D/C power.According to the embodiment party that can be combined with other embodiment as described herein
Formula, DC sputterings may include that pulse DC is sputtered, and especially bipolar pulse DC is sputtered.Therefore, power supply can be configurable for providing arteries and veins
DC is rushed, especially bipolar pulse DC.Especially, for the first sedimentary origin 223a the first D/C power and for the second sedimentary origin
223b the second D/C power can be configurable for providing pulsed DC power.In fig. 1 it is illustrated that sedimentary origin and substrate to be coated
300 it is horizontally disposed.In some embodiments that can be combined with other embodiment disclosed herein, can be used sedimentary origin and
Substrate 300 to be coated is arranged vertically.
Exemplary reference Fig. 1, can be in vacuum chamber according to the embodiment that can be combined with other embodiment as described herein
Composition of the sensor 270 for measurement processing atmosphere 222 is provided in room 210.Especially, sensor 270 can be configured
For for measuring inert gas, water vapour, H within each content range such as specified herein2、O2With containing for residual gas
Amount.
As shown in fig. 1, according to the embodiment that can be combined with other embodiment as described herein, sensor 270, gas
Body distribution system 230 and outlet pump 236 can be connected to controller 240, and the gas distributing system 230 includes the first quality stream
The mass flow controller 235 of amount controller 234 and second.Controller 240 is controllable to include the He of the first mass flow controller 234
The gas distributing system 230 and outlet pump 236 of second mass flow controller 235, to be produced in vacuum chamber 210 and
Keep the processing atmosphere with composition as described herein.
According to the embodiment that can be combined with other embodiment as described herein, controller 240 can be connected to power supply.
Further, controller can be configurable for control supplied to the first sedimentary origin 223a the first power and be configurable for controlling
Second power of the system supplied to the second sedimentary origin 223b.
When the equipment 200 as described herein for depositing the layer for display manufacturing is used to carry out according to implementation as described herein
During the method for the manufacture layer of mode, substrate 300 may be disposed under sedimentary origin, as illustrated in Fig. 1.Substrate 300 can
It is disposed on substrate support 310.According to the embodiment that can be combined with other embodiment as described herein, for be coated
The baseplate support device of the substrate of cloth may be disposed in vacuum chamber.For example, baseplate support device may include conveying roller, magnetic conductance
Draw system and further feature.Baseplate support device may include for substrate to be coated to be driven in and out into vacuum chamber 210
Substrate drive system.
Exemplary reference picture 2, according to the embodiment that can be combined with other embodiment as described herein, vacuum chamber
210 can be for O2The 3rd air inlet 238 at be connected to gas distributing system 230.As shown in Figure 2, the 3rd air inlet 238
Gas distributing system 230 can be connected to via the 3rd conduit with the 3rd mass flow controller 237 (for example, the 3rd valve),
3rd mass flow controller is configurable for control and provided to the O of processing gas atmosphere 2222Amount.
According to the embodiment that can be combined with other embodiment as described herein, gas distributing system may include to be used to carry
For O2The 4th source of the gas.Therefore, equipment as described herein can be configurable for providing water vapour, H independently of one another2And O2, with
So that the vapour content and/or H2 contents and/or O of the processing gas atmosphere 222 within vacuum chamber 2102Content can be only
Site control.
According to the embodiment that can be combined with other embodiment as described herein, for by O2There is provided to vacuum chamber
4th source of the gas of the gas distributing system 230 of the processing gas atmosphere 222 in 210 can provide inert gas/O2Mixture.Lazy
Property gas/O2The partial pressure of inert gas in mixture can be from the lower limit and inert gas of the inert gas partial pressures specified herein
Selected in scope between the upper limit of partial pressure.Therefore, in inert gas/O2O in mixture2Partial pressure can be specified from herein
O2The lower limit and O of partial pressure2Selected in scope between the upper limit of partial pressure.
According to the embodiment that can be combined with other embodiment as described herein, gas distributing system 230 may include pump
And/or compressor reducer is for the processing gas atmosphere of pressure needed for the offer inside vacuum chamber.Especially, gas distributing system
It may include pump and/or compressor reducer for according to as herein by inert gas, H2, water vapour and O2The corresponding partial pressure upper limit and under
The specified corresponding partial pressure range of limit provides the partial pressure of inert gas and/or provides H2Partial pressure and/or provide water vapour point
Pressure and/or offer O2Partial pressure.
As shown in Figure 2, according to the embodiment that can be combined with other embodiment as described herein, the 3rd mass flow
Controller 237 may be connected to controller 240.Therefore, controller 240 can control gas distributing system 230 and outlet pump 236, institute
Stating gas distributing system 230 includes the first mass flow controller 234, the second mass flow controller 235, the 3rd mass flow
Controller 237, inert gas flow amount controller, so as to can produce and maintain in vacuum chamber 210 have as described herein into
The processing atmosphere processing atmosphere divided.Therefore, all the components of the processing gas atmosphere of the selection with composition as described herein can
It is controlled independently of each other.Especially, controller can be configurable for controlling gas distributing system to cause the stream of water vapour
Dynamic, H2Flowing, inert gas flowing and O2The energy of flow be controlled independently of each other, to establish with as described herein
The processing gas atmosphere of selected composition.Therefore, the composition of selected processing gas atmosphere can be adjusted highly precisely.
Therefore, it is configurable for according to the equipment of embodiment as described herein by using according to reality as described herein
The method of the manufacture layer of mode is applied to manufacture the layer of multiple thin film transistor (TFT)s for display manufacturing.
Fig. 3 shows multiple thin film transistor (TFT)s of manufacture of the explanation according to embodiment as described herein for display manufacturing
Layer method block diagram.Method 100 is included in processing gas atmosphere sputters 101 electrically conducting transparent oxygen from the target containing indium oxide
Compound layer.Especially, the target can be the target containing tin indium oxide (ITO), the target especially containing ITO 90/10.According to herein
Described embodiment, ITO 90/10 are In including ratio2O3:SnO2=90:10 indium oxide (In2O3) and tin oxide
(SnO2)。
According to the embodiment that can be combined with other embodiment as described herein, processing gas atmosphere include water vapour,
H2And inert gas.It should be understood that it can be added up according to the component content of the processing gas atmosphere of embodiment as described herein
100%.Especially, according to some embodiments that can be combined with other embodiment as described herein, water vapour, H2And inertia
The content of gas can add up the 100% of processing gas atmosphere.The group that inert gas can form from helium, neon, argon, krypton, xenon or radon
Selected in group.Especially, inert gas can be argon (Ar).
According to the embodiment that can be combined with other embodiment as described herein, the water vapour in processing gas atmosphere contains
Amount may be from 1% lower limit, especially 2.0% lower limit, more particularly 4% lower limit and 6% upper limit, especially 8%
The upper limit, the scope between more particularly 10.0% upper limit.By being sputtered in processing gas atmosphere from the target containing indium oxide
Vapour content in including transparent conducting oxide layer, wherein processing gas atmosphere is between lower and upper limit as described herein
Scope in select, can adjust oxide skin(coating) impalpable structure degree.Especially, by increasing in processing gas atmosphere
Vapour content, the degree of the impalpable structure in oxide skin(coating) can increase.
According to the embodiment that can be combined with other embodiment as described herein, the H in processing gas atmosphere2Content can
Come comfortable 2.2% lower limit, especially 4.2% lower limit, more particularly 6.1% lower limit and 10% upper limit, especially
Scope between 15.0% upper limit, more particularly 20.0% upper limit.On H2Lower limit, it should be appreciated that H2LEL be
4.1% and deactivation lower limit be 6.0%.By sputtering transparent conductive oxide from the target containing indium oxide in processing gas atmosphere
Layer, the wherein H in processing gas atmosphere2Content selects from the scope between lower and upper limit as described herein, adjustable
The degree of the impalpable structure of whole oxide skin(coating).Especially, by increasing the H in processing gas atmosphere2Content, in oxide skin(coating)
The degree of impalpable structure can increase.
Therefore, by with vapour content as described herein and H2From containing indium in the processing gas atmosphere of content
Target sputters including transparent conducting oxide layer, can suppress to crystallize the formation of ITO phases.In consideration of it, then for example lost by wet chemistry
In the case of the oxide skin(coating) for carving patterning sputtering, the reduction of crystallization ITO residues on the oxide layer can be realized.Therefore,
The quality of the patterned oxide layer for TFT display manufacture can be improved.In addition, there is water as described herein by providing
Steam content and H2The processing gas atmosphere of content, can be reduced or the H even in Processing for removing atmosphere2It is inflammable and blast
Risk.
According to the embodiment that can be combined with other embodiment as described herein, the inert gas in processing gas atmosphere
Content may be from 55% lower limit, especially 73% lower limit, more particularly 81% lower limit and 87.5% upper limit, especially
Scope between the upper limit on ground 92.0%, more particularly 96.3% upper limit.By in processing gas atmosphere from containing indium oxide
Target sputtering including transparent conducting oxide layer, wherein the content of the inert gas in processing gas atmosphere is under as described herein
Selected in scope between limit and the upper limit, can ensure that the quality of including transparent conducting oxide layer.Especially, have by providing such as this
The processing gas atmosphere of inert gas described in text, can be reduced or the H even in Processing for removing atmosphere2It is inflammable and blast
Risk.
According to the embodiment that can be combined with other embodiment as described herein, water vapour and H2Ratio come comfortable 4:
1 lower limit, especially 2:1 lower limit, more particularly 1:1.5 lower limit and 1:2 upper limit, especially 1:3 upper limit, particularly
Ground 1:Scope between 4 upper limit.By sputtering including transparent conducting oxide layer from the target containing indium oxide in processing gas atmosphere,
Water vapour and H wherein in processing gas atmosphere2The ratio of content is from the scope between lower and upper limit as described herein
Middle selection, the control to the degree of impalpable structure in oxide skin(coating) are improved.Therefore, the degree of impalpable structure can be by more
Accurately control, such as compared with the degree of the impalpable structure in wherein oxide skin(coating) can be only by the situation of water vapour control.
According to the embodiment that can be combined with other embodiment as described herein, the gross pressure of processing gas atmosphere can be come
Comfortable 0.2Pa lower limit, especially 0.3Pa lower limit, more particularly 0.4Pa lower limit and the 0.6Pa upper limit, especially
Scope between the 0.7Pa upper limit, more particularly the 0.8Pa upper limit.Especially, the gross pressure of processing gas atmosphere can be
0.3Pa.By sputtering including transparent conducting oxide layer, wherein processing gas atmosphere from the target containing indium oxide in processing gas atmosphere
Gross pressure be limited to select in the upper limit under as described herein, can adjust the degree of the impalpable structure of oxide skin(coating).Especially
Ground, by increasing the gross pressure of processing gas atmosphere, the degree of the impalpable structure in oxide skin(coating) can increase.
According to the embodiment that can be combined with other embodiment as described herein, processing gas is established in vacuum chamber
Before atmosphere, all composition gases of processing gas atmosphere can mix.Therefore, before including transparent conducting oxide layer is sputtered or the phase
Between, all composition gases of processing gas atmosphere can be supplied to vacuum chamber by identical gas spargers.Especially, according to
The selected composition of process described herein atmosphere, water vapour, H2, inert gas and O2Identical gas spargers can be passed through
Supplied to vacuum chamber.For example, the gas componant of the processing gas atmosphere of selection can be in selected processing gas via gas
Spray thrower mixes before providing into vacuum chamber in mixed cell.Therefore, according to can be with other embodiment party as described herein
Some embodiments that formula combines, the equipment for sedimentary may include mixed cell, and the mixed cell is used for selected
Processing gas gas componant provided via gas spargers into vacuum chamber before by the gas of selected processing gas
Body composition mixes.Therefore, highly uniform processing gas atmosphere can be established in vacuum chamber.Therefore, can be in vacuum chamber
Establish highly uniform processing gas atmosphere.
According to the embodiment that can be combined with other embodiment as described herein, the water vapour in processing gas atmosphere
Partial pressure may be from the lower limit in 0.004Pa (for example, wherein for the processing gas of the gross pressure lower limit with 0.2Pa
Atmosphere selection 2.0% water vapour content lower limit in the case of) and 0.8Pa the upper limit (for example, wherein for
The 0.8Pa gross pressure upper limit processing gas atmosphere selection 10.0% water vapour content the upper limit in the case of) between model
Enclose.
Therefore, it will be understood that the partial pressure of the water vapour in processing gas atmosphere can be by selected by processing gas atmosphere
Selected gross pressure of the vapour content (with percentage [%] for unit) with processing gas atmosphere (be with Pascal [Pa]
Unit) product calculate.Therefore, the selected higher limit and lower limit of the vapour content in processing gas atmosphere and
The selected higher limit and lower limit of the gross pressure of processing gas atmosphere, it can calculate and select the water in processing gas atmosphere to steam
The corresponding lower limit and higher limit of the partial pressure of vapour.
According to the embodiment that can be combined with other embodiment as described herein, the H in processing gas atmosphere2Point
Pressure may be from the lower limit in 0.0044Pa (for example, wherein for the processing gas atmosphere of the gross pressure lower limit with 0.2Pa
The H of selection 2.2%2In the case of the lower limit of content) and 0.16Pa the upper limit (for example, wherein for the total of 0.8Pa
The H of the processing gas atmosphere selection 20.0% of upper pressure limit2In the case of the upper limit of content) between scope.
Therefore, it will be understood that H in processing gas atmosphere2Partial pressure can pass through the selected H of processing gas atmosphere2Content
(with percentage [%] for unit) and the product of the selected gross pressure (with Pascal [Pa] for unit) of processing gas atmosphere are come
Calculate.Therefore, the H in processing gas atmosphere2The selected higher limit and lower limit and processing gas atmosphere of content it is total
The selected higher limit and lower limit of pressure, can calculate and select the H in processing gas atmosphere2Partial pressure corresponding lower limit
And higher limit.
According to some embodiments that can be combined with other embodiment as described herein, processing gas atmosphere 222 enters one
Step includes O2.O in processing gas atmosphere2Content may be from 0.5% lower limit, especially 1.0% lower limit, more particularly
1.5% lower limit and 3.0% upper limit, the especially scope between 4.0% upper limit, more particularly 15.0% upper limit.It is logical
Cross and sputter including transparent conducting oxide layer, the wherein O in processing gas atmosphere from the target containing indium oxide in processing gas atmosphere2Contain
Amount selects from the scope between lower and upper limit as described herein, can adjust and optimize oxide skin(coating) on low resistance
Sheet resistance.Especially, in order on low resistance optimization sheet resistance, O2Content must be from lower critical value and upper critical value
Between scope in select.For example, in O2In the case that content is less than lower critical value or higher than upper critical value, thin-layer electric can be obtained
The relatively high value of resistance.Therefore, embodiment as described herein provides the thin layer that oxide skin(coating) is adjusted and optimized on low resistance
Resistance.
It should be understood that water vapour, H are included according to processing gas atmosphere2, inert gas and O2Embodiment as described herein,
Water vapour, H2, inert gas and O2Respective content can add up the 100% of processing gas atmosphere.
According to the embodiment that can be combined with other embodiment as described herein, the O in processing gas atmosphere2Partial pressure
The lower limit in 0.001Pa be may be from (for example, being selected for the processing gas atmosphere of the gross pressure lower limit with 0.2Pa wherein
Select 0.5% O2In the case of the lower limit of content) and 0.12Pa the upper limit (for example, wherein for the stagnation pressure with 0.8Pa
The O of the processing gas atmosphere selection 15.0% of the power upper limit2In the case of the upper limit of content) between scope.
Therefore, it will be understood that O in processing gas atmosphere2Partial pressure can pass through the selected O of processing gas atmosphere2Content
(with percentage [%] for unit) and the product of the selected gross pressure (with Pascal [Pa] for unit) of processing gas atmosphere are come
Calculate.Therefore, the O in processing gas atmosphere2The selected higher limit and lower limit and processing gas atmosphere of content it is total
The selected higher limit and lower limit of pressure, can calculate and select the O in processing gas atmosphere2The corresponding lower limit of partial pressure and
Higher limit.
According to the embodiment that can be combined with other embodiment as described herein, the inert gas in processing gas atmosphere
Partial pressure may be from the lower limit in 0.11Pa (for example, wherein for the processing gas atmosphere of the gross pressure lower limit with 0.2Pa
Enclose the lower limit for the inert gas content that have selected 55%, the upper limit of 10% vapour content, 20% H2The upper limit of content and
5.0% O2In the case of the upper limit of content) and 0.7704Pa the upper limit (for example, wherein for the stagnation pressure with 0.8Pa
The processing gas atmosphere of the power upper limit have selected the upper limit of 96.3% inert gas content, 1% water vapour content lower limit,
2.2% H2The lower limit of content and 0.5% O2In the case of the lower limit of content) between scope.
Therefore, it will be understood that the partial pressure of the inert gas in processing gas atmosphere can be by selected by processing gas atmosphere
Select inert gas content (with percentage [%] for unit) and the selected gross pressure of processing gas atmosphere (is with Pascal [Pa]
Unit) product calculate.Therefore, according to the selected higher limit and lower limit of inert gas content in processing gas atmosphere and
The selected higher limit and lower limit of the gross pressure of processing gas atmosphere, can calculate and select the indifferent gas in processing gas atmosphere
The corresponding lower limit and higher limit of body partial pressure.
As Fig. 4 block diagram in be exemplarily illustrated, display system is used for according to the manufacture of embodiment as described herein
The method of the layer for the multiple thin film transistor (TFT)s made can further comprise water vapour and H is provided separately2102 to processing gas atmosphere
Enclose.This improves the control of the degree to the impalpable structure in oxide skin(coating) and impalpable structure can be precisely controlled
Degree.
According to the embodiment that can be combined with other embodiment as described herein, water vapour can be steamed with inert gas/water
Vapour mixture is provided to processing gas atmosphere.The partial pressure of inert gas in inert gas/water vapor mixture can be from such as originally
The upper limit of the lower limit of the inert gas partial pressures of literary defined to inert gas partial pressures selects.In inert gas/water vapor mixture
In the partial pressure of water vapour can be between the lower limit of steam partial pressure as prescribed herein and the upper limit of steam partial pressure
Scope selects.
According to the embodiment that can be combined with other embodiment as described herein, H2Can be with inert gas/H2Mixture carries
It is supplied to processing gas atmosphere.By with inert gas/H2Mixture is by H2There is provided to processing gas atmosphere, can reduce or even disappear
Except the H in gas distributing system2Inflammable and risk of explosion.In inert gas/H2The partial pressure of inert gas in mixture can
Selected from the scope between the lower limit for the inert gas partial pressures such as specified herein and the upper limit of inert gas partial pressures.In inertia
Gas/H2H in mixture2Partial pressure can be from the H such as specified herein2The lower limit and H of partial pressure2Model between the upper limit of partial pressure
Enclose middle selection.
According to the embodiment that can be combined with other embodiment as described herein, O2With inert gas/O2Mixture provides
To processing gas atmosphere.In inert gas/O2The partial pressure of inert gas in mixture can be from the indifferent gas such as specified herein
Selected in scope between the lower limit of body partial pressure and the upper limit of inert gas partial pressures.In inert gas/O2O in mixture2Point
Pressure can be from the O such as specified herein2The lower limit and O of partial pressure2Selected in scope between the upper limit of partial pressure.
Exemplary reference picture 4, according to the embodiment that can be combined with other embodiment as described herein, methods described can
Further comprise utilizing the vapour content and/or H in processing gas atmosphere2The impalpable structure of content control oxide layer
103 degree.Especially, by increasing vapour content and/or H in processing gas atmosphere2Content, the nothing in oxide skin(coating)
The degree of amorphous configuration can increase.Especially, by increasing the H in the first processing gas atmosphere2Content, number of dies are special
The number of dies of interface not between substrate and first layer can be reduced.
Further, as being exemplarily illustrated in Fig. 3 block diagram, according to can be combined with other embodiment as described herein
Embodiment, methods described can further comprise the O using in processing gas atmosphere2The thin layer of content control oxide layer
Resistance 104.Especially, in order to optimize the sheet resistance of layer stacking on low resistance after anneal, locate during layer deposits
O in process gases atmosphere2Content must select from the scope between lower and upper limit as described herein.According to embodiment party
Formula, after layer deposition, for example it can perform cycle of annealing in the temperature range from 200 DEG C to 250 DEG C.
According to the embodiment that can be combined with other embodiment as described herein, after including transparent conducting oxide layer annealing
Resistivity may be from μ Ohm cm of lower limit 100, especially under 210 μ Ohm cm lower limit, more particularly 220 μ Ohm cm
Limit and the 260 μ Ohm cm upper limit, especially in the scope between μ Ohm cm of the upper limit 280, the more particularly μ Ohm cm of the upper limit 400.
Especially, the resistivity after oxide skin(coating) annealing can be about 230 μ Ohm cm.
According to the embodiment that can be combined with other embodiment as described herein, processing gas atmosphere is by water vapour, H2、
Inert gas, O2Formed with residual gas.By water vapour, H2, inert gas, O2With the processing gas atmosphere of residual gas composition
Water vapour, H in enclosing2, inert gas and O2Content can be from scope between each lower limit and each upper limit as described herein
Middle selection.Residual gas can be any impurity or any pollutant in processing gas atmosphere.By water vapour, H2, inertia
Gas, O2In the processing gas atmosphere of residual gas composition, the content of residual gas can be the 0.0% of processing gas atmosphere
To 1.0%.According to the embodiment that can be combined with other embodiment as described herein, the content of residual gas is processing gas
The 0.0% of atmosphere.It should be understood that it can be added up to according to the component content of the processing gas atmosphere of embodiment as described herein
100%.Especially, processing gas atmosphere is not in the case where wherein residual gas is present in processing gas atmosphere or wherein
Containing residual gas, i.e. in the case that the content of residual gas is 0.0%, water vapour, H2, inert gas, O2With residual gas
Content can add up to the 100% of processing gas atmosphere.
According to the embodiment that can be combined with other embodiment as described herein, manufacture for the multiple of display manufacturing
The method of the layer of thin film transistor (TFT) can further comprise that especially wet chemical etch carrys out patterned layer for example by etching.This
Outside, may include for example to make layer anneal after patterning according to the method for the manufacture layer of embodiment as described herein.
According to embodiment as described herein, as manufactured by the method according to the manufacture layer of embodiment as described herein
Layer can be used in electronic installation, be particularly used in electrooptical device.Therefore, have by providing according to embodiment party as described herein
The electronic installation of the layer of formula, the quality of electronic installation can be improved.Especially, technical staff will be understood that, according to reality as described herein
The manufacture for applying mode is especially closed for the method for layer and the equipment of methods described of multiple thin film transistor (TFT)s of display manufacturing
The adjustment to TFT display property during manufacture is provided in high-quality and low cost.
Claims (15)
1. a kind of method (100) for the layer for manufacturing multiple thin film transistor (TFT)s for display manufacturing, comprising：
(101) including transparent conducting oxide layer is sputtered from the target containing indium oxide in processing gas atmosphere (222),
Wherein described processing gas atmosphere (222) includes water vapour, H2And inert gas,
The content of wherein water vapour be from 1% to 10%,
Wherein H2Content be from 2.2% to 20.0%, and
The content of wherein inert gas is from 55.0% to 96.8%.
2. the method as described in claim 1 (100),
Wherein water vapour and H2Ratio be from 4:1 to 1:4.
3. method (100) as claimed in claim 1 or 2,
The gross pressure of wherein described processing gas atmosphere (222) is from 0.2Pa to 0.8Pa.
4. method (100) as claimed any one in claims 1 to 3,
The partial pressure of water vapour wherein in the processing gas atmosphere (222) is from 0.002Pa to 0.08Pa.
5. the method (100) as any one of Claims 1-4,
H wherein in the processing gas atmosphere (222)2Partial pressure be from 0.0044Pa to 0.16Pa.
6. the method (100) as any one of claim 1 to 5,
Wherein described processing gas atmosphere (222) further includes O2, and wherein O2Content be from 0.5% to 15.0%.
7. method (100) as claimed in claim 6,
O wherein in the processing gas atmosphere (222)2Partial pressure be from 0.001Pa to 0.12Pa.
8. the method (100) as any one of claim 1 to 7,
The partial pressure of inert gas wherein in the processing gas atmosphere (222) is from 0.11Pa to 0.7704Pa.
9. the method (100) as any one of claim 1 to 8,
Further include content and/or the processing gas atmosphere using the water vapour in the processing gas atmosphere (222)
(222) H in2Content control the oxide skin(coating) impalpable structure (103) degree.
10. method (100) as claimed in any one of claims 1-9 wherein,
Further include the thin layer that the oxide skin(coating) is controlled using the content of the water vapour in the processing gas atmosphere (222)
Resistance (104), wherein the resistivity is from 100 μ Ohm cm to 400 μ Ohm cm.
11. the method (100) as any one of claim 7 to 10,
Further include and utilize the O in the processing gas atmosphere (222)2Content control the thin layer of the oxide skin(coating)
Resistance (104), wherein the resistivity is from 100 μ Ohm cm to 400 μ Ohm cm.
12. the method (100) as any one of claim 7 to 11,
Wherein described processing gas atmosphere (222) is by water vapour, H2, inert gas, O2Formed with residual gas,
The content of wherein described water vapour is from 1% to 10%
Wherein described H2Content be from 2.2% to 20.0%,
The content of wherein described inert gas be from 55.0% to 96.3%,
Wherein described O2Content be from 0.5% to 15.0%, and
The content of wherein described residual gas is from 0.0 to 1.0%.
13. method (100) as claimed in claim 12,
Wherein described target is the target containing tin indium oxide (ITO), the target especially containing ITO 90/10,
The partial pressure of water vapour wherein in the processing gas atmosphere (222) be from 0.002Pa to 0.08Pa,
H wherein in the processing gas atmosphere2Partial pressure be from 0.0044Pa to 0.16Pa,
O wherein in the processing gas atmosphere2Partial pressure be from 0.001Pa to 0.12Pa,
The partial pressure of inert gas wherein in the processing gas atmosphere is from 0.11Pa to 0.7744Pa, and methods described enters one
Step includes：
The content of water vapour in the-utilization processing gas atmosphere (222) and/or the utilization processing gas atmosphere (222)
H2Content control the oxide skin(coating) impalpable structure (103) degree；With
- further include the content for utilizing the water vapour in the processing gas atmosphere (222) and/or utilize the processing gas
O in atmosphere (222)2Content control the sheet resistance (104) of the oxide skin(coating), wherein the resistivity is from 100 μ
Ohm cm to 400 μ Ohm cm.
14. a kind of electronic installation for including layer, the layer is made as the method (100) as any one of claim 1 to 13
Make.
15. a kind of equipment (200) for being used to deposit the layer for display manufacturing, comprising：
Vacuum chamber (210)；
One or more contain indium oxide, and the target (220a, 220b) especially containing tin indium oxide (ITO), the target is in the vacuum chamber
It is used to sputter including transparent conducting oxide layer within room；
Gas distributing system (230), for providing processing gas within the vacuum chamber, wherein the vacuum chamber
(210) in the first air inlet (234) for water vapour and for H2The second air inlet (235) place be connected to the gas point
Match system (230), especially wherein described vacuum chamber (210) is further for O2The 3rd air inlet (237) place connection
To the gas distributing system (230)；With
Controller (240), it is connected to the gas distributing system (230) and is configured as configuration processor code, wherein performing
During described program code, the method as any one of claim 1 to 13 is carried out.
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| JPS6318426A (en) * | 1986-07-09 | 1988-01-26 | Casio Comput Co Ltd | input device |
| JPH0950712A (en) * | 1995-08-07 | 1997-02-18 | Hitachi Ltd | Transparent conductive film and method for forming the same |
| CN1918672A (en) * | 2004-03-09 | 2007-02-21 | 出光兴产株式会社 | Thin film transistor, thin film transistor substrate, method for producing thin film transistor substrate, liquid crystal display device using thin film transistor substrate, apparatus and method for producing thin film transistor substrate, sputtering target, transparent conductive film and transparent electrode formed by using sputtering target, and apparatus and method for producing thin film transistor substrate |
| CN102159971A (en) * | 2008-10-17 | 2011-08-17 | 株式会社爱发科 | Antireflective film formation method, antireflective film, and film formation device |
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| JP2000127282A (en) * | 1998-10-23 | 2000-05-09 | Kanegafuchi Chem Ind Co Ltd | Transparent polymer film with transparent conductive film |
| JP2001168029A (en) * | 1999-12-10 | 2001-06-22 | Sony Corp | Method of forming semiconductor film and method of manufacturing thin film semiconductor device |
| KR101238926B1 (en) * | 2007-12-28 | 2013-03-06 | 가부시키가이샤 아루박 | Method and apparatus for forming transparent conductive film |
| CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
| JP7059747B2 (en) * | 2018-03-27 | 2022-04-26 | ソニーグループ株式会社 | Fine particle sorting method, fine particle sorting program and fine particle sorting system |
-
2015
- 2015-05-08 WO PCT/EP2015/060230 patent/WO2016180445A1/en active Application Filing
- 2015-05-08 KR KR1020177035389A patent/KR102109312B1/en active Active
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Patent Citations (4)
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|---|---|---|---|---|
| JPS6318426A (en) * | 1986-07-09 | 1988-01-26 | Casio Comput Co Ltd | input device |
| JPH0950712A (en) * | 1995-08-07 | 1997-02-18 | Hitachi Ltd | Transparent conductive film and method for forming the same |
| CN1918672A (en) * | 2004-03-09 | 2007-02-21 | 出光兴产株式会社 | Thin film transistor, thin film transistor substrate, method for producing thin film transistor substrate, liquid crystal display device using thin film transistor substrate, apparatus and method for producing thin film transistor substrate, sputtering target, transparent conductive film and transparent electrode formed by using sputtering target, and apparatus and method for producing thin film transistor substrate |
| CN102159971A (en) * | 2008-10-17 | 2011-08-17 | 株式会社爱发科 | Antireflective film formation method, antireflective film, and film formation device |
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| KR20180004785A (en) | 2018-01-12 |
| KR102109312B1 (en) | 2020-05-12 |
| CN114892129A (en) | 2022-08-12 |
| WO2016180445A1 (en) | 2016-11-17 |
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