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CN107564882A - 电路板构件和用于制造电路板构件的方法 - Google Patents

电路板构件和用于制造电路板构件的方法 Download PDF

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Publication number
CN107564882A
CN107564882A CN201710518799.7A CN201710518799A CN107564882A CN 107564882 A CN107564882 A CN 107564882A CN 201710518799 A CN201710518799 A CN 201710518799A CN 107564882 A CN107564882 A CN 107564882A
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China
Prior art keywords
intermediate plate
semiconductor element
circuit board
terminal contact
board member
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CN201710518799.7A
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CN107564882B (zh
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托马斯·戈特瓦尔德
克里斯蒂安·勒斯勒
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Schweizer Electronic AG
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Schweizer Electronic AG
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Abstract

本发明涉及一种电子组件、即电路板构件，具有：第一半导体元件(14)，其布置在导电的中间板(16)的上侧上，从而使半导体元件(14)的端子接触部(18)与中间板(16)电连接；和第二半导体元件(15)，其布置在中间板(16)的下侧上。第二半导体元件(15)具有第一端子接触部(17)和第二端子接触部(19)，其中这两个端子接触部(17、19)在中间板(16)的方向上取向，并且其中，第一端子接触部(17)与中间板(16)接触，并且其中，第二端子接触部(19)不与中间板(16)接触。此外，本发明涉及用于制造这样的电路板构件的方法。

Description

电路板构件和用于制造电路板构件的方法
技术领域
本发明涉及一种电路板构件和用于制造电路板构件的方法。
背景技术
如果在电子组件、如电路板构件中将多个半导体元件相互接线(例如以所谓的电子半桥布置形式)，那么一般选择如下地布置半导体元件，使得能良好地接触端子接触部(Anschlusskontakte)。这例如发生于半导体元件并排布置在一个平面中的时候，见WO2014/139674 A1。
发明内容
本发明的目的在于，提出一种紧凑的电路板构件和用于制造紧凑的电路板构件的方法。从所谓的现有技术出发，该目的通过具有权利要求1所述的特征的电路板构件以及具有权利要求15所述的特征的方法实现。有利的实施方式在从属权利要求中给出。
在根据本发明的电子组件、即电路板构件中，第一半导体元件布置在导电的中间板的上侧上，从而使半导体元件的端子接触部(Anschlusskontakte)\与中间板全面积地电接触。第二半导体元件布置在中间板的下侧上。第二半导体元件具有第一端子接触部和第二端子接触部，这两个端子接触部在中间板的方向上取向。第一端子接触部与中间板接触，第二端子接触部不与中间板接触。中间板形成电路板构件的相位分接器。
在根据本发明的用于制造电路板构件的方法中，第一半导体元件布置在导电的中间板的上侧上，从而使半导体元件的端子接触部与中间板全面积地电接触。第二半导体元件布置在中间板的下侧上。第二半导体元件包括第一端子接触部和第二端子接触部，其中，这两个端子接触部在中间板的方向上取向。第一端子接触部与中间板接触。第二端子接触部不与中间板接触。中间板设计为电路板构件的相位分接器。
术语“上/下”或者“上侧/下侧”涉及附图中所选的示图并且不应理解为有关电路板构件的特定取向的限制。接下来为了方便描述，第一半导体元件被称为上面的元件并且第二半导体元件被称为下面的元件。这也不理解为一种限制。
通过中间板建立在第一半导体元件的端子接触部与第二半导体元件的第一端子接触部之间的导电的连接。通过使半导体元件与中间板的不同侧面连接，产生半导体元件的节省空间的布置可行性，该半导体元件延伸经过不同平面。通过使第二端子接触部不与中间板接触，避免了在第二半导体元件的两个端子接触部之间的短路，这两个端子接触部在中间板的方向上取向。
经由设计为相位分接器的中间板导出高电流。对于将高电流引导到中间板中来说有利的是，第一半导体元件的端子接触部与中间板全面积地电接触。与端子接触部与中间板不是全面积的电接触的电子组件(US 2016/0172279 A1)不同，根据本发明的电路板构件设计用于将高电流引入到中间板中。中间板不用作为相位分接器的电子组件(US 2009/0189291 A1)用于其它的目的并且是不相关的现有技术。
第一半导体元件和/或第二半导体元件能够具有下述特征。半导体元件能够在其上侧具有第一端子接触部和第二端子接触部。第一端子接触部能够设计为源极，第二端子接触部能够设计为栅极。半导体元件能够在其下侧具有第三端子接触部。第三端子接触部能够设计为漏极。第三端子接触部能够大面积地延伸经过半导体元件的上侧。例如，第三端子接触部能够延伸经过由半导体元件撑开的面积的至少70％、优选至少80％、进一步优选90％。第三端子接触部能够形成闭合的面而不在内部被中断。
第一端子接触部能够大面积地延伸经过半导体元件的下侧。第一端子接触部能够具有内部的凹槽，在凹槽之中布置有第二端子接触部。第一端子接触部占据的面积能够至少是第二端子接触部占据的面积的2倍(Faktor)、优选至少为5倍、进一步优选至少为10倍。第二端子接触部占据的面积能够延伸经过由半导体元件撑开的面积的至少70％、优选至少80％、进一步优选90％。
根据本发明，第一半导体元件的特别能够是漏极触点的第三端子接触部与中间板全面积地电连接。在本发明的一个实施方式中，第二半导体元件的特别能够是源极触点的第一端子接触部也与中间板全面积地电接触。
第二半导体元件的第一端子接触部和第二端子接触部能够布置在共同的平面，该平面平行于中间板。中间板能够具有凹槽，以便避免在中间板与第二半导体元件的第二端子接触部之间的电接触。凹槽能够以绝缘材料填充。
凹槽能够具有通孔的形状，其延伸穿过中间板。随后能够使第二端子接触部从中间板的上侧起被接触。为了该目的，电路板构件能够包括电导体，其延伸穿过通孔并且与第二端子接触部接触。导体与中间板之间的中间空间能够以电绝缘的材料填充，例如绝缘树脂。
导体能够相关于中间板的平面形成环。环的内部能够以绝缘材料填充。环具有朝向中间板的上侧的正面端部(Stirnende)以及朝向中间板的下侧的正面端部。环能够在一个或这两个正面端部处利用由导电材料制成的层封闭。正如环那样，材料层与中间板电绝缘。材料层能够布置在与中间板的表面相同的平面中。
这样的结构能够由此产生，首先在中间板中钻孔，孔对应于下面的半导体元件的第二端子接触部的位置。孔能够以绝缘材料填充，在其中随后钻直径更小的孔。涂敷在该更小的孔的壁中的由导电材料制成的涂层形成环形结构形式的层间电路接通部。环形结构能够在其两个端部上扩展，从而形成剩余环。环形结构的内腔能够以(通常不能导电的)树脂封闭。接下来中间板能够在其整个表面上涂有(电镀)由导电材料制成的层，从而在相关的正面端部上封闭了环形结构。为了使环形结构针对中间板电绝缘，能够去除电镀层的围绕环形结构的区域，例如能够通过光刻技术/蚀刻。
也可行的是，与环形结构连接的连接面从环形结构向外延伸(Fan out散开)，而不与中间板电接触。经由该连接面能够直接制造电接触。随后能够取消填充环形结构。然而还必须通过腐蚀进程释放剩余环和接触面。
附加于或替代于所描述的通孔，中间板在与第二半导体元件的第二端子接触部相对置的区域中具有相比于与第二半导体元件的第一端子接触部相对置的区域中更小的材料厚度。随后能够在中间板的表面上放置第一端子接触部，同时第二端子接触部与中间板间隔开。
材料厚度更小的区域能够构造为盲孔。盲孔形成与第二端子接触部相邻的凹陷部，而不断开中间板。盲孔能够完全通过第二半导体元件遮盖。在第二端子接触部和盲孔之间的空隙能够以电绝缘的材料、例如绝缘的树脂填充。第二端子接触部能够延伸穿过第二半导体元件。因此，第二端子接触部能够从第二半导体元件的与中间板相对置的一侧来接触。
也可行的是，材料厚度更小的区域延伸穿过第二半导体元件的边界。在第二半导体元件的第二端子接触部与中间板之间能够布置绝缘层，其能够例如由绝缘的树脂组成。在绝缘层和第二半导体元件之间能够设计导电层，其与第二端子接触部导电地连接。由此，第二端子接触部能够从中间板的下侧起被接触，而不必使得导体延伸穿过下面的半导体元件。
半导体元件的端子接触部和中间板之间的连接能够通过促进粘附的层制造，该层能导电并且涂在端子接触部和中间板之间。合适的方法例如是银烧结、扩散焊接、导电粘合、软焊接等。下面的半导体元件的第二端子接触部能够与导体元件连接，其与中间板机械连接，然而相对于中间板电绝缘。第二端子接触部和导体元件之间的连接能够以相应的方式制造。
在两个半导体元件与中间板连接之后，边界能够嵌入到由电绝缘材料制成的层中，其中，能够附加地层叠有铜膜。通过合适的方法、例如激光钻孔能够在绝缘材料和铜膜中生成通道(μ通孔，μ-Vias)，通过该通道能穿过绝缘层接触选出的端子接触部。特别地，在此能够涉及端子接触部，其布置在上面的半导体元件的上侧上和/或下面的半导体元件的下侧上。对此附加地或可替换地，能够穿过层接触导体，该导体横穿中间板的平面然而针对中间板电绝缘。通过使开口以能导电的材料填充，能够在电绝缘材料的表面上生成连接面，在该连接面处例如能够连接插接触点。为了避免不期望的通过电流和短路，能够再次将根据本发明的电路板构件嵌入到电绝缘的层中，从而仅还能从外面接触插接触点。插接触点分别形成外部触点，其也在电路板构件的最终状态中保持能接触的。
电绝缘的层能够由纤维增强的材料、特别是由纤维增强的塑料材料制成。电绝缘的层能够具有用于电路板构件的承载的功能。特别地，根据本发明的电路板构件能够自承载有中间板和电绝缘的层。自承载的电路板构件适用于没有将电路板构件施加到基板上的应用。
可行的是，电路板构件在其最终状态中不仅在上侧上而且也在下侧上具有一个或多个外部触点。为了能够简单地连接电路板构件，有利的能够是，所有的外部触点布置在电子组件的一侧上。其中能够排除中间板自身，例如根据本发明的电路板构件构造为半桥布置并且经由中间板制造到电路板构件的相位的接触。特别地，能够在电路板构件的上侧上布置所有的外部触点。
对此能够给出导电路线，其从下面的半导体元件的下侧穿过中间板的平面延伸直到电路板构件的上侧为止。导电路线能够针对中间板电绝缘和/或针对其它的导电线路电绝缘，其他的导电线路从下面的半导体元件延伸直到电路板构件的上侧为止。导电路线能够包括中间板的一部分，该部分与中间板的与半导体元件连接的部分电绝缘。也可行的是，导电路线包括一个或多个层间电路接通部，其从电路板构件的上侧延伸穿过中间板的平面。
在电路板构件的上侧上和/或下侧上能够设置冷却元件。冷却元件能够包括例如冷却肋形式的扩大表面，经由其能够将热量从半导体元件排出。特别地，当在电路板构件的下侧上不设置外部触点的时候，能够在电路板构件的下侧上设置冷却元件。这特别是发生于在外部触点引导向电路板构件的上侧时。冷却元件能够大面积地在X-Y方向上实施，从而使其在Z方向上完全覆盖由第一和/或第二半导体元件撑开的面。半导体元件能够如下地布置，使得其在Z方向上相交。X-Y方向相当于由中间板撑开的垂直于Z方向的平面。
冷却元件能够经由填充间隙的层(热界面材料，其例如是膏、液体或柔性膜的形式)与电路板构件连接。填充间隙的层能够是导电的，然而具有良好的导热性。由此能够实现的是，填充间隙的层能够直接与电路板构件的导电部分接触。填充间隙的层能够同时是促进粘附的层，通过其制造在冷却元件和电路板构件之间的机械连接。
半导体元件能够安装在中间板的表面上，使得半导体元件相对于中间板的表面突起。也能够实现的是，在中间板中构造用于容纳半导体元件的凹陷部(空穴)。空穴能够如下地确定大小，即半导体元件的表面位于与中间板的表面相同的平面中，或者半导体元件的表面甚至轻微地在中间板中下沉。由此接下来能够以绝缘层压印组件，而不为半导体元件施加过量的压力。
半导体元件的端子接触部能够直接与中间板连接。也能够实现的是，中间板首先嵌入到由电绝缘的材料构成的层中，并且端子接触部通过电绝缘的材料中的通道(μ通孔)被接触。绝缘体的厚度能够随着应用的压力级别变化。材料能够是光纤增强或不增强的。材料的导热性能够例如在0.1W/mK和20W/mK之间、优选在0.2W/mK和10W/mK之间。对此，电绝缘的材料能够首先涂有铜膜并且随后配设导电层(电镀)，以便使得半导体元件的端子接触部与导电层接触。半导体元件能够放置在导电层上或容纳在导电层的空穴中。通过涂敷电绝缘的层和铜膜，能够通过光刻工艺和蚀刻使得下面的元件的这两个触点相互电绝缘地实施。
中间板自身能够形成电路板构件的外部触点。对此中间板的特定区域能够一开始就保持不具有由涂敷在中间板的其它区域中的电绝缘的层。也能够实现的是，事后再次去除这样的电绝缘的层，以便暴露中间板。随后能够使得电导体直接与中间板连接，例如通过焊、电焊或硬焊。在不能从外面接触中间板的替代实施方式中，中间板能够通过压入触点接触。在电路板构件中能够设计用于压入触点的层间电路接通部。
半导体元件能够是功率半导体，例如MOSFET或IGBT形式。功率半导体能够分别包括三个端子接触部，其中一个构造为漏极，一个构造为源极并且一个构造为栅极。源极和栅极能够布置在功率半导体的一侧上。漏极端子能够布置在功率半导体的相对置的一侧上。在本发明的意义中，下面的功率半导体的源极端子能够形成第一端子接触部并且与中间板的下侧连接。在本发明的意义中，下面的功率半导体的栅极端子能够为第二端子接触部，其虽然在与源极端子相同的方向上取向，但是与中间板绝缘。栅极端子能够通过导体接触，该导体穿过中间板的平面被导向电路板构件的上侧，然而与中间板绝缘。也能够实现延伸穿过功率半导体(TSV–穿透硅通孔)的栅极触点。随后实现与下侧的连接。
上面的功率半导体的漏极端子能够与中间板的上侧连接。两个功率半导体的源极与中间板接触一次且漏极与中间板接触一次，两个功率半导体的这种布置被称为半桥布置。中间板形成功率半导体的该半桥布置的相位。
由中间板撑开的平面被称为X-Y平面。半导体元件能够如下地布置，使得其在与该平面垂直的Z方向上重叠。该重叠能够包括下面的半导体元件的面积的至少20％，优选至少50％、进一步优选至少70％。半导体元件能够如下地布置，使得下面的功率半导体的第二端子接触部保持不重叠。由此能够实现根据本发明的电路板构件的紧凑的设计方案，然而热量输出也集中在中间板的较小的区域上。特别地，当电路板构件在热学上高负载的时候，因此重要的也能够是将半导体元件布置为其在Z方向上不重叠的。
中间板的大小应当规定为，其能够经受住在电路板构件的运行中出现的电流。经由电路板引导的电流强度能够位于10A和300A之间并且特别地大于50A，优选大于100A。中间板的为半导体元件提供的安装面大于由半导体元件撑开的面，特别是其两倍，优选是三倍。中间板的厚度能够位于0.5mm和2.5mm之间，优选1mm和2mm之间。
电路板构件形式的根据本发明的电子组件能够是电路板的组成部分或自身形成电路板。中间板和根据本发明的电路板构件的电绝缘的层能够形成电路板的承载结构。电路板例如能够包括三个半桥，其共同联接成B-6桥。也能够实现的是，电路板包括半桥，其以其它的方式功能性地嵌入到电路板中。根据本发明的电路板构件的制造以电路板制造工艺为基础，如下述单独得出的那样。
附图说明
接下来在参考附图的情况下根据有利的实施方式示例性地描述本发明。在此示出：
图1是根据本发明的电路板构件；
图2至10是在制造根据图1的部件时的方法步骤；
图11至25是根据本发明的电子组件的替代实施方式的示意图；
图26是根据本发明的电路板构件的半导体元件的仰视图；
图27是图26的半导体元件的俯视图。
具体实施方式
图1示出了作为电路板构件的电子组件，在其中，第一功率半导体14和第二功率半导体15的形式的两个半导体元件从上或下与铜片形式的中间板16(引线框)连接。功率半导体14、15中的每个都包括源极端子17、漏极端子18和栅极端子19。在此，根据图26、27大面积地设计源极和漏极端子，从而使其覆盖功率半导体14、15的表面的主要部分。栅极端子占据较小的面积。源极端子17和栅极端子19相应地共同布置在功率半导体14、15的一侧上。漏极端子18位于功率半导体14、15的相对置的一侧上。
附图分别仅示出了根据本发明的功能区域。边缘的另一边，电路板构件能够具有另外的功能。例如，三个半桥能够共同联接为B-6桥，或者半桥能够形成电路板的功能性的元件。
功率半导体14、15在半桥布置中与中间板16连接。因此形成在上面的功率半导体17的漏极端子18和中间板16之间的电接触以及在下面的功率半导体15的源极端子17和中间板16之间的电接触。功率半导体14、15的该布置的相位直接经由中间板16分接，其右面的部段是暴露的。通过该布置形成用于半桥的相位分接的中间板。
导体20从下面的功率半导体15的栅极端子19朝向电路板构件的上侧延伸。导体20横穿中间板16，然而与中间板16电绝缘。
由这两个功率半导体14、15和中间板16组成的布置从上和下压印有由不导电的材料制成的层21、22。在层21、22上又涂敷了导电层23、24，其通过设计在层21、22中的通道与功率半导体14、15的端子接触部连接。导电层23、24如下地划分为相互电分离的区域，即在功率半导体14、15的不同端子接触部之间没有短路。
在图1中，第一外部触点25经由延伸穿过不导电层21的通道与上面的功率半导体14的栅极端子19连接。第二外部触点26与上面的功率半导体14的源极端子17连接。第三外部触点27与下面的功率半导体15的栅极端子19经由导体20电连接。下面的导电层24与下面的功率半导体15的漏极端子18连接。
为了制造这样的电路板构件，在第一步骤(图2)中在中间板16中生成孔30。孔30以由绝缘的树脂制成的栓塞31封闭(图3)，并且在栓塞31中生成另外的孔32(图4)。在孔32中制造层间电路接通部33(图5)，其遮蔽孔33的孔壁。层间电路接通部33的内腔以由绝缘材料制成的栓塞封闭。在涂覆导电层之后能够电镀表面(图6)。层间电路接通部33的区域通过蚀刻与中间板16电绝缘(图7)，从而出现导体20，其横穿中间板16的平面。
功率半导体14、15能够与如上准备的中间板16连接(图8)。对此，在中间板16和功率半导体14、15的相应的端子接触部之间涂敷导电的、促进粘附的层34。通过层34，功率半导体14、15不仅电子地与中间板16连接还机械地与中间板16连接。下面的功率半导体15的栅极端子19以相同的方式与导体20连接。
功率半导体14、15在由绝缘材料制成的层21、22中层叠(einlaminieren)。在没有空穴的安装中能够暴露层21、22的用于容纳组件的部分。在层21、22中设计通道，通过通道能接触功率半导体14、15的端子接触部。在图9的截面图中能够看到四个通道，其延伸到上面的功率半导体14的源极端子17。一个通道延伸到上面的功率半导体14的栅极端子19。一个通道延伸到导体20。多个通道通过下面的绝缘层22延伸到下面的功率半导体15的漏极端子18。通过电镀增强导电层23、24，从而使导电层也填充通道并且因此与功率半导体14、15的端子接触部接触。
根据图10，在下面的导电层24上安装冷却体35，其大面积地延伸。冷却体35经由中间层36与导电层24连接。中间层36起电绝缘的作用，然而具有良好的导热性。在上面的功率半导体14的源极端子17上连接插头36，其同时作为冷却元件起作用。下面的功率半导体15的漏极端子18直接经由导电层24来接触(在所示区域之外)。
在根据图11的可替换的实施方式中，代替冷却体35而连接有第二插头37，其同时作为冷却元件起作用。经由插头37能够对下面的功率半导体15的漏极端子18做出反应。
图12示出了另一个变体，在其中中间板16的第一部段38和第二部段39相互电绝缘。部段38形成相位，在其上连接有上面的功率半导体15的漏极端子18和下面的功率半导体15的源极端子17。经由部段39制造在下面的功率半导体15的漏极端子18和电路板构件的上侧之间的电接触。插头37一方面作为冷却元件并且另一方面作为对于下面的功率半导体15的漏极触点18的连接器起作用。此外，功率半导体14、15容纳在中间板16的部段38的空穴40、41中。为了避免导电层23、24的不期望的向外接触，能够涂敷由电绝缘的材料制成的层42、43(图13)。
代替两个相互电绝缘的部段38、39，也能够生成中间板16中的大面积的断开部，其以电绝缘的材料44填充并且在多个层间电路接通部45中生成。以该方式也能够制造在下面的功率半导体15的漏极端子18与电路板构件的上侧处的插头37之间的电接触。
图14示出了一个实施方式，在其中能够直接由中间板16分接以下相位，该相位与上面的功率半导体14的漏极端子18连接并与下面的功率半导体15的源极端子17连接。如果中间板16在根据图15的替换实施方式中压入到由电绝缘材料制成的层21、22中，那么也能够通过压入触点46实现相位的分接，该压入触点压入到层间电路接通部中，该层间电路接通部穿透中间板16。
代替下面的功率半导体15的栅极端子19与导体20从电路板构件的上侧起接触，能够根据图16设置导体47，其穿过功率半导体15导向功率半导体15的下侧(TSV-穿透硅通孔)。因此能够实现的是，下面的功率半导体15的栅极端子19从电路板构件的下侧起被接触，见图17的端子48。图18和19示出了相应的变体，在其中功率半导体14、15容纳在中间板16的空穴40、41中。
能够实现的是，中间板16在下面的功率半导体15的栅极端子19之上具有断开部(参见图16至19)，以便避免在栅极端子19和中间板16之间的短路。可替换地，根据图20能够在中间板16中构造设计为盲孔的凹槽49。由此出现的空腔在以层压树脂压制时回填。
图21示出了一个实施方式，在其中中间板16的与下面的功率半导体15的栅极端子19相对置的区域相对于与下面的功率半导体15的源极端子17相对置的区域回缩。由此能够使得源极端子17与中间板16接触，同时栅极端子19被间隔开，从而不发生电接触。栅极端子19能够经由导电层50接触，该导电层自身经由电绝缘的层51与中间板16分离。中间板16中的有关的阶梯能够要么相加地通过电镀、要么相减地通过蚀刻生成。材料厚度更小的区域能够随后涂有由绝缘材料制成的层以及铜膜。通过电蚀刻能够增强所期望的区域中的导电层。图22示出了所属的变体，在其中在层压之后功率半导体14、15容纳在中间板16的空穴中。
在根据图23的替换的实施方式中，中间板16直接被压制有绝缘层52、53和所属的铜膜。在功率半导体14、15和中间板16之间的电接触通过层52、53之中的通道(μ通孔)制造，该层以导电材料填充并且与导电层54、55接触。可替换地，也在层54、55中能够实现的是，功率半导体14、15在空穴40、41中下降(图24)。中间板16的远离功率半导体14、15的部段能够从绝缘的涂层52、53中排除，以便能够实现到相位的电通道。

Claims (24)

1.一种电路板构件，具有：第一半导体元件(14)，所述第一半导体元件布置在导电的中间板(16)的上侧上，从而使所述第一半导体元件(14)的端子接触部(18)与所述中间板(16)全面地电接触；第二半导体元件(15)，所述第二半导体元件布置在所述中间板(16)的下侧上，其中，所述第二半导体元件(15)具有第一端子接触部(17)和第二端子接触部(19)，其中，这两个端子接触部(17、19)在所述中间板(16)的方向上取向，并且其中，所述第一端子接触部(17)与所述中间板(16)接触，其中，所述第二端子接触部(19)不与所述中间板(16)接触，并且其中，所述中间板(16)形成所述电路板构件的相位分接器。
2.根据权利要求1所述的电路板构件，其特征在于，所述中间板(16)具有凹槽(30、49)，以便避免在所述中间板(16)与所述第二半导体元件(15)的所述第二端子接触部(19)之间的电接触。
3.根据权利要求2所述的电路板构件，其特征在于，所述凹槽具有通孔(30)的形状，所述通孔延伸穿过所述中间板(16)。
4.根据权利要求3所述的电路板构件，其特征在于，电导体(20)延伸穿过所述通孔(30)。
5.根据权利要求4所述的电路板构件，其特征在于，所述电导体(20)环形地构造在所述中间板(16)的平面中。
6.根据权利要求1至5中任一项所述的电路板构件，其特征在于，所述中间板(16)在与所述第二半导体元件(15)的所述第二端子接触部(19)相对置的区域中具有相比于与所述第二半导体元件(15)的所述第一端子接触部(17)相对置的区域更小的材料厚度。
7.根据权利要求1至6中任一项所述的电路板构件，其特征在于，所述第二半导体元件(15)的所述第二端子接触部(19)从所述中间板(16)的上侧起被接触。
8.根据权利要求1至7中任一项所述的电路板构件，其特征在于，所述第二半导体元件(15)的所述第二端子接触部(19)延伸穿过所述第二半导体元件(15)。
9.根据权利要求1至8中任一项所述的电路板构件，其特征在于，所述第一半导体元件(14)和/或所述第二半导体元件(15)嵌入到由电绝缘的材料制成的层(21、22)中，并且所述半导体元件(14、15)的所述端子接触部(17、18、19)通过所述层(21、22)中的通道被接触。
10.根据权利要求1至9中任一项所述的电路板构件，其特征在于，所有的外部触点(25、26、27)布置在所述中间板(16)的所述上侧上。
11.根据权利要求1至10中任一项所述的电路板构件，其特征在于，所述中间板(16)嵌入到由电绝缘的材料制成的层(52、53)中，并且所述半导体元件(14、15)的所述端子接触部(17、18)通过所述层(52、53)中的通道与所述中间板(16)接触。
12.根据权利要求1至11中任一项所述的电路板构件，其特征在于，电绝缘的所述层(52、53)由纤维增强的材料形成，和/或电绝缘的所述层(52、53)具有用于所述电路板构件的承载的功能。
13.根据权利要求1至12中任一项所述的电路板构件，其特征在于，所述第一半导体元件(14)的所述端子接触部(18)是第一功率半导体的漏极端子，所述第二半导体元件的所述第一端子接触部(17)是第二功率半导体的源极端子，并且所述第二半导体元件(15)的所述第二端子接触部(19)是所述第二功率半导体的栅极端子。
14.一种电路板，包括根据权利要求1至14中任一项所述的电路板构件。
15.一种用于制造电路板构件的方法，其中，第一半导体元件(14)布置在导电的中间板(16)的上侧上，从而所述半导体元件(14)的端子接触部(18)与所述中间板(16)全面地电接触，并且其中，第二半导体元件(15)布置在所述中间板(16)的下侧上，其中，所述第二半导体元件(15)具有第一端子接触部(17)和第二端子接触部(19)，其中，这两个端子接触部(17、19)在所述中间板(16)的方向上取向，并且其中，所述第一端子接触部(17)与所述中间板(16)接触，其中，所述第二端子接触部(19)不与所述中间板(16)接触，并且其中，所述中间板(16)构造为所述电路板构件的相位分接器。
16.根据权利要求15所述的方法，其特征在于，在安装所述半导体元件(14、15)之前在所述中间板(16)中生成第一孔(30)，所述孔的位置对应于下面的半导体元件(15)的所述第二端子接触部(19)。
17.根据权利要求16所述的方法，其特征在于，所述孔(30)填充有绝缘材料(31)，在所述孔中随后钻孔形成直径更小的第二孔(32)。
18.根据权利要求17所述的方法，其特征在于，所述第二孔(32)的壁涂有导电材料制成的层，从而出现环形结构(33)。
19.根据权利要求18所述的方法，其特征在于，涂敷一个层，利用所述层将所述环形结构(33)的正面端部封闭。
20.根据权利要求19所述的方法，其特征在于，所述环形结构(33)与周围环境电绝缘。
21.根据权利要求15所述的方法，其特征在于，在安装所述半导体元件(14、15)之前在所述中间板(16)中生成材料厚度更小的区域，所述材料厚度更小的区域对应于下面的半导体元件(15)的所述第二端子接触部(19)的位置。
22.根据权利要求21所述的方法，其特征在于，所述材料厚度更小的区域构造为盲孔(49)。
23.根据权利要求21所述的方法，其特征在于，所述材料厚度更小的区域越过所述第二半导体元件(15)向外延伸。
24.根据权利要求15至23中任一项所述的方法，其特征在于，在安装所述半导体元件(14、15)之前首先将所述中间板嵌入到由电绝缘材料制成的层(52、53)中，并且所述端子接触部通过电绝缘材料中的通道被接触。
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