CN107547054B

CN107547054B - Separated compensation inductance internal matching power amplifier

Info

Publication number: CN107547054B
Application number: CN201710799593.6A
Authority: CN
Inventors: 张勇
Original assignee: Innogration Suzhou Co ltd
Current assignee: Innogration Suzhou Co ltd
Priority date: 2017-09-07
Filing date: 2017-09-07
Publication date: 2020-03-27
Anticipated expiration: 2037-09-07
Also published as: CN107547054A

Abstract

The invention discloses a separated compensation inductance internal matching power amplifier which comprises an active device, wherein the active device is provided with an output impedance matching network, the output impedance matching network comprises a high-pass network, the high-pass network comprises a direct current blocking capacitor, the output of the active device is connected with an output lead through a first inductor, the output lead is connected with the ground through a second inductor, and the output lead is used as an output end. The structure enables the design to be simple and flexible, the mutual inductance between the first inductor and the second inductor and the inductance of the Ld can be reduced, and the radio frequency bandwidth and the efficiency of the amplifier are improved. Meanwhile, the limited design space can be fully utilized, and the compensation requirement of the parasitic capacitance at low frequency (for example, lower than 1GHz) can be realized.

Description

Separated compensation inductance internal matching power amplifier

Technical Field

The present invention relates to an amplifier including an output impedance matching network, and in particular to a split compensation in-inductor matching power amplifier.

Background

US7,119,623 discloses an output circuit for a high power semiconductor amplifier element, wherein an inductance and a capacitance are configured to compensate an output capacitance of the semiconductor amplifier. The circuit disclosed in US7,119,623 (one example is shown in figure 1) provides compensation for the output capacitance 20 of the power transistor 18 by using a series circuit connected in parallel with the circuit comprising the

inductances

22, 26, 30 and capacitances 24, 32. A power supply lead 34 is connected to a node 31 between the inductor 30 and the capacitor 32.

In many cases, such as disclosed in US7,119,623 and US6,646,321, where internal matching requires high-pass matching components and high-value inductance inside the device package, an example of the high-pass matching component circuit architecture is shown in fig. 2, whose physical structure is shown in fig. 3, due to the limited space available for device design and due to the limitations of component parameter limits, it is particularly difficult to achieve this in a simple manner in low frequency (e.g., below 1GHz) applications, which usually requires multiple crossed bond wires, which can introduce significant mutual inductance, while increasing the inductance of Ld, thereby affecting device performance. Furthermore, for high frequency devices (e.g. above 1GHz), low Q low loss broadband matching is also required, so it is desirable that Ld be as short as possible and that mutual inductance be as small as possible. Therefore, a large Ld inductance and mutual inductance inevitably exist in the non-separated compensation inductance internal matching technology, which can result in:

1. the operating bandwidth is limited.

2. The power amplification efficiency deteriorates.

3. Harmonic modulation is not accurate enough.

Disclosure of Invention

In view of the above technical problems, an object of the present invention is to provide a split compensation inductor internal matching power amplifier, which has a simple and flexible design, can reduce the mutual inductance between a first inductor and a second inductor and the inductance of Ld, and improve the radio frequency bandwidth and efficiency of the amplifier. Meanwhile, the limited design space can be fully utilized, and the compensation requirement of the parasitic capacitance at low frequency (for example, lower than 1GHz) can be realized.

In order to solve the problems in the prior art, the technical scheme provided by the invention is as follows:

a split compensation inductance internal matching power amplifier comprises an active device, wherein the active device is provided with an output impedance matching network, the output impedance matching network comprises a high-pass network, the high-pass network comprises a direct current blocking capacitor, the output of the active device is connected with an output lead through a first inductor, the output lead is connected with the ground through a second inductor, and the output lead serves as an output end.

Preferably, the active device and the output impedance matching network are packaged on the same substrate.

Preferably, the first inductor and the second inductor are both formed by a plurality of metal wire groups.

Preferably, the metal wire group of the first inductor and the metal wire group of the second inductor are in a separated state in a physical space.

Compared with the scheme in the prior art, the invention has the advantages that:

1. the structure can make the design flexible, can fully utilize the limited design space and realize the compensation requirement at low frequency (for example, lower than 1 GHz). The volume is small and exquisite, easily integrated, with low costs.

2. The spatial separation of the metal wire group of the first inductor and the metal wire group of the second inductor can effectively reduce the mutual inductance between the first inductor and the second inductor and the inductance of the Ld, thereby improving the radio frequency bandwidth and efficiency of the amplifier and being beneficial to realizing accurate harmonic modulation.

Drawings

The invention is further described with reference to the following figures and examples:

FIG. 1 is a circuit diagram of an output circuit for a power transistor having a compensation circuit;

FIG. 2 is a schematic representation of an internal matching scheme for an active device;

FIG. 3 is a schematic diagram of the package of FIG. 2;

FIG. 4 is a circuit diagram of a power amplifier of the present invention;

FIG. 5 is a schematic view of a first package of the present invention;

FIG. 6 is a second package of the present invention;

fig. 7a and 7b show an implementation of MCM (multi-chip module) hybrid integration.

Detailed Description

The above-described scheme is further illustrated below with reference to specific examples. It should be understood that these examples are for illustrative purposes and are not intended to limit the scope of the present invention. The conditions used in the examples may be further adjusted according to the conditions of the particular manufacturer, and the conditions not specified are generally the conditions in routine experiments.

Example (b):

as shown in fig. 4, a split compensation inductance internal matching power amplifier includes an active device D401 having an output 402, the active device 401 has an output impedance matching network, the output impedance matching network includes a high-pass network, the high-pass network includes that the output 402 of the active device 401 is connected to an output lead 404 via a first inductance (direct-connection inductance) Ld 403, the output lead 402 is connected to a dc blocking capacitor Ci 406 via a second inductance (compensation inductance) Li 405, the other end of the dc blocking capacitor 406 is connected to ground, and the output lead 404 serves as an output end of the power amplifier. The output 402 of the active device 401 is the drain connection of the active device 401 in this embodiment.

In the package, the first inductor 403 and the second inductor 405 are generally formed by a plurality of metal wire sets, as shown in fig. 5 and 6. The metal wire set of the first inductor 403 is physically separated from the metal wire set of the second inductor 405. The second inductor 405 can balance the source-drain capacitance of the active device, reduce the transmission phase of the output matching network, and make the phase of the output unit less than 90 degrees. The spatial separation of the metal wire group of the second inductor and the metal wire group of the first inductor can effectively reduce the mutual inductance between the compensation inductor and the direct connection inductor, thereby improving the radio frequency bandwidth and efficiency of the amplifier and being beneficial to realizing accurate harmonic modulation.

There are two packaging implementations, the first one is as shown in fig. 5, the dc blocking capacitor 406 is located at the left side of the active chip D401 (the amplifier is placed from left to right according to input to Output), and the direct-connection inductor Ld 403 is connected to the active chip D401 and the Output terminal Output. The metal wire group of the compensation inductor Li 405 is located on the upper side and the lower side of the metal wire group of the active chip D401 and the direct-connection inductor L403D, and the compensation inductor 405 is connected to the dc blocking capacitor (ground) Ci 406 and the Output terminal Output. The ground of the dc blocking capacitor 406 is not shown.

In the second embodiment, as shown in fig. 6, the blocking capacitor Ci 406 is located at the upper and lower sides of the active chip D (the amplifier is placed from left to right according to input to Output), and the direct-connection inductor Ld is connected to the active chip D and the Output terminal Output. The metal wire group of the compensation inductor Li is positioned on the upper side and the lower side of the metal wire group of the active chip D and the direct-connected inductor Ld, and the compensation inductor is connected with the blocking capacitor Ci and the Output end Output.

The packaging form of the present invention may adopt the conventional packaging implementation of the power tube or the hybrid integrated implementation of the MCM (multi-chip module), as shown in fig. 7a and 7b, all active devices and peripheral matching circuits are placed on the same base and connected by bonding wires, and the peripheral matching circuits may be planar circuits such as a PCB (printed circuit board), a ceramic substrate, etc., or IPDs (integrated passive devices). Flexible design, small size and low cost.

It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims

1. A split compensation inductance internal matching power amplifier comprises an active device, wherein the active device is provided with an output impedance matching network, the output impedance matching network comprises a high-pass network, the high-pass network is characterized in that the high-pass network comprises a DC blocking capacitor, the output of the active device is connected with an output lead through a first inductor, the output lead is connected with the ground through a second inductor, and the output lead is used as an output end.

2. The matched power amplifier in split compensation inductance of claim 1, wherein the active device and the output impedance matching network are packaged on the same substrate.

3. The matched power amplifier in separated compensation inductor as claimed in claim 1 or 2, wherein the first inductor and the second inductor are both composed of a plurality of metal wire groups.

4. The matched power amplifier in split compensation inductor as recited in claim 3, wherein the metal wire set of the first inductor is physically separated from the metal wire set of the second inductor.