CN107515061A - A kind of touch sensor and preparation method thereof - Google Patents
A kind of touch sensor and preparation method thereof Download PDFInfo
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- CN107515061A CN107515061A CN201710693351.9A CN201710693351A CN107515061A CN 107515061 A CN107515061 A CN 107515061A CN 201710693351 A CN201710693351 A CN 201710693351A CN 107515061 A CN107515061 A CN 107515061A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011787 zinc oxide Substances 0.000 claims description 19
- 239000002070 nanowire Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000001338 self-assembly Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 6
- 229920002521 macromolecule Polymers 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 description 8
- 229920001971 elastomer Polymers 0.000 description 8
- 239000011701 zinc Substances 0.000 description 6
- 241000209094 Oryza Species 0.000 description 5
- 235000007164 Oryza sativa Nutrition 0.000 description 5
- 235000009566 rice Nutrition 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 230000000536 complexating effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The present invention provides a kind of touch sensor and preparation method thereof, belongs to sensor technical field, and it can solve the problems, such as that existing touch sensor drift, hysteresis, sensitivity is not high.In the touch sensor of the present invention, the pressure drag haptic unit being made up of nm-class conducting wire is uniformly arranged, and after touch sensor upper surface external object, the length of nm-class conducting wire itself reduces, and so as to cause self-resistance to reduce, the electric current for causing to flow through becomes big.The change of feedback current is measured, so as to perceive the information of external pressure, according to the external information of nm-class conducting wire feedback, overall external information can be obtained.Because pressure drag haptic unit is uniformly arranged, therefore the phenomenon of sensor drift and hysteresis can be avoided, improve tactility and resolving accuracy.
Description
Technical field
The invention belongs to sensor technical field, and in particular to a kind of touch sensor and preparation method thereof.
Background technology
Robot system needs various sensors to obtain the feedback information of correlation from environment.Due to robot
Vision system involves great expense, and control is complicated, and can not obtain visual information under dark situation or when having barrier, now touches
Feel that sensor obtains tactilely-perceptible ability with regard to significant for robot.Touch sensor can not only obtain robot
Hand and the contact position of object and the distribution function of contact force, and the object information that vision can not obtain can be obtained,
Such as vibrant characteristic, heat transfer characteristic, mechanical property etc., while tactile is also the conventional side of one kind that people is exchanged with robot
Formula.
Inventor has found that at least there are the following problems in the prior art：Existing touch sensor such as high-density pressure formula
The structure of touch sensor as shown in figure 1, this touch sensor is using the rubber containing conductive black particle as sensing element,
After contact external object, the conductive rubber effect of being under pressure so that the distance between conductive particle changes, and causes electricity
Resistance changes, so as to cause the electric current for flowing through upper and lower conductive rubber to change.The shortcomings that this sensor is due to conduction
Conductive particle skewness in rubber, and the phenomenon of drift and hysteresis occurs, cause touch sensitivity not high, at the same it is this tactile
Feel that sensor is also relatively simple to the feedback of the information of outside.
The content of the invention
A kind of the problem of present invention drifts about for existing touch sensor, lagged, sensitivity is not high, there is provided tactile sensing
Device and preparation method thereof.
Technical scheme is used by solving present invention problem：
A kind of touch sensor, including substrate, the multiple pressure drag haptic units uniformly arranged being formed on substrate are described
Pressure drag haptic unit includes first electrode, the second electrode being oppositely arranged, and is clipped in more between first electrode, second electrode
Root nm-class conducting wire.
Preferably, the second electrode is set compared to the first electrode closer to substrate, and the first electrode is remote
From the nm-class conducting wire one side be provided with for touch flexible cover sheet.
Preferably, the touch sensor also includes the detection unit being connected with the second electrode, is received for measuring
The change of rice current in wire, resistance or voltage.
Preferably, mutually insulated between the adjacent nm-class conducting wire.
Preferably, the first electrode includes the more row electrodes uniformly arranged, and the second electrode includes more
The row electrode of even arrangement, and the bearing of trend of row electrode and row electrode is mutually perpendicular to.
Preferably, a diameter of 10-300nm of the nm-class conducting wire, it is described to receive on the direction of the substrate
The size of rice wire is 0.5-50 μm.
Preferably, the first electrode is made up of grapheme material, and the second electrode is made up of ITO；The nanometer
Wire includes silver metal nano wire, zinc oxide nanowire.
Preferably, the zinc oxide nanowire is the cylindrical material being made up of the ZnO of stable hexagonal wurtzite structure.
The present invention also provides a kind of preparation method of touch sensor, including following preparation process：
Multiple second electrodes uniformly arranged are formed on substrate；
More nm-class conducting wires are formed on the second electrode；
First electrode is formed on nm-class conducting wire.
Preferably, more nm-class conducting wires of the formation are to use macromolecule complex reaction self assembly shape on the second electrode
Cheng Duogen nm-class conducting wires；Or
Prepare to form more nm-class conducting wires using saturated vapor reaction method.
In the touch sensor of the present invention, the pressure drag haptic unit being made up of nm-class conducting wire is uniformly arranged, and works as tactile sensing
After device upper surface external object, the length of nm-class conducting wire itself reduces, and so as to cause self-resistance to reduce, causes what is flowed through
Electric current becomes big.The change of feedback current is measured, so as to perceive the information of external pressure, the outside letter according to nm-class conducting wire feedback
Breath, can obtain overall external information.Because pressure drag haptic unit is uniformly arranged, therefore sensor drift and stagnant can be avoided
Phenomenon afterwards, improves tactility and resolving accuracy.
Brief description of the drawings
Fig. 1 is the structural representation of the touch sensor of embodiments of the invention 1；
Fig. 2-5 is the structural representation of the touch sensor of embodiments of the invention 2；
Fig. 6 is the preparation method flow chart of the touch sensor of embodiments of the invention 3；
Wherein, reference is：1st, substrate；2nd, pressure drag haptic unit；21st, first electrode；22nd, second electrode；23rd, nanometer
Wire；3rd, flexible cover sheet；4th, insulating barrier；5th, detection unit.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
The present embodiment provides a kind of touch sensor, including substrate 1, as shown in figure 1, including substrate 1, is formed at substrate 1
On multiple pressure drag haptic units 2 uniformly arranged, first electrode 21 that the pressure drag haptic unit 2 includes being oppositely arranged, the
Two electrodes 22, and more nm-class conducting wires 23 being clipped between first electrode 21, second electrode 22.
In the touch sensor of the present embodiment, the pressure drag haptic unit 2 being made up of nm-class conducting wire 23 is uniformly arranged, and works as tactile
After sensor upper surface external object, the length of nm-class conducting wire 23 itself reduces, and so as to cause self-resistance to reduce, causes
The electric current flowed through becomes big.The change of feedback current is measured, so as to perceive the information of external pressure, is fed back according to nm-class conducting wire 23
External information, overall external information can be obtained.Because pressure drag haptic unit 2 is uniformly arranged, therefore sensor can be avoided
Drift and the phenomenon of hysteresis, improve tactility and resolving accuracy.
Embodiment 2：
The present embodiment provides a kind of touch sensor, and as shown in Figure 2-5, including substrate 1 and the pressure drag on substrate 1 touch
Feel unit 2.Pressure drag haptic unit 2 is including between first electrode 21, second electrode 22 and first electrode 21, second electrode 22
More nm-class conducting wires 23.First electrode 21 includes the more row electrodes uniformly arranged, and second electrode 22 includes more uniformly arrangements
Row electrode, row electrode and row electrode crossing are set, and the bearing of trend of row electrode and row electrode is mutually perpendicular to.Nm-class conducting wire 23
One end be connected with first electrode 21, the other end is connected with second electrode 22.
In accompanying drawing corresponding to the present embodiment 2, it is shown that by first electrode 21, second electrode 22 and be clipped in first electrode
21st, the setting relation of the pressure drag haptic unit 2 that more nm-class conducting wires 23 between second electrode 22 are formed on substrate 1.Accompanying drawing
The size of shown each electrode, thickness etc. are only to illustrate.Specifically, the both ends of nm-class conducting wire 23 connect first electrode 21, respectively
Two electrodes 22, first electrode 21, the second electrode 22 of strip are uniformly arranged, uniformly arranged equivalent to nm-class conducting wire 23, this
Just solve the problems, such as existing conductive rubber formula touch sensor drift and hysteresis.
As a kind of preferred embodiment in the present embodiment, the first electrode 21 is made up of grapheme material, described
Second electrode 22 is made up of ITO.
It should be noted that the second electrode 22 being connected with the bottom of nm-class conducting wire 23 can use ITO materials, Huo Zheqi
He is suitable for the conductive material of the growth of nm-class conducting wire 23, and this kind of conductive material is convenient for etching micro Process.With receiving
The first electrode 21 that the top of rice wire 23 is connected is using with good conduction, printing opacity, the graphene of bendability characteristics.Need
Illustrate, the situation of a piece nm-class conducting wire 23 of growth is only schematically illustrate in accompanying drawing, specifically, the second electricity being made up of ITO
On each array element of pole 22, more nm-class conducting wires 23 can be grown.
In one embodiment, the touch sensor also includes the detection unit 5 being connected with the second electrode 22, uses
In the change of the measurement electric current of nm-class conducting wire 23, resistance or voltage.
In accompanying drawing corresponding to the present embodiment 5, it is shown that the annexation of pressure drag haptic unit 2 and detection unit 5, when tactile
When feeling that sensor contacts with upper surface with object, the external force that contactant is applied is delivered to the nanometer of sensitivity by first electrode 21
On wire 23, pressure drag haptic unit 2 is equivalent to a variable resistance, and the change of the resistance value detected according to detection unit 5 is big
The distribution situation that small and resistance value changes, it is possible to obtain the size of pressure and corresponding pressure distribution situation.
In one embodiment, mutually insulated between the adjacent nm-class conducting wire 23.And first electrode 21 is away from described
The one side of nm-class conducting wire 23 is provided with the flexible cover sheet 3 for touching.
In accompanying drawing corresponding to the present embodiment 2, Fig. 4, Fig. 5, the insulating barrier 4 of covering pressure drag haptic unit 2 is with the addition of, so that
Mutually insulated between the adjacent nm-class conducting wire 23.In addition, the flexible cover sheet 3 set in first electrode 21 is used to protect the
One electrode 21.
As a kind of optional embodiment in the present embodiment, a diameter of 10-300nm of the nm-class conducting wire 23, hanging down
Directly on the direction of the substrate 1, the size of the nm-class conducting wire 23 is 0.5-50 μm.
That is, the diameter of individual conductive nanowire 23 is in 100nm or so, length is at 1 μm or so, pressure drag haptic unit 2
Although being made up of more nano wires, the size of the obtained sensor array of nm-class conducting wire 23 still may be at micron amount
Level.Because the array of nm-class conducting wire 23 can experience the pressure from different directions, therefore this tactile sensing utensil exactly
There is higher sense of touch sensitivity.It is understood that when preparing nm-class conducting wire 23 using different preparation methods, what is obtained receives
The diameter and length difference of rice wire 23 are larger, and the size of general nm-class conducting wire 23 can be within the above range.
Preferably, the nm-class conducting wire 23 includes silver metal nano wire, zinc oxide nanowire.
Wherein, nm-class conducting wire 23 can be ZnO nano-wire material, can also be substituted by Ag metal nanometer lines, using saturation
Ag metal nanometer lines prepared by steam reaction method are vertical well with substrate 1, and the length of Ag nano wires is controllable, preparation temperature
Low, the resistance compared to other nano wires Ag metal nanometer lines is lower, and the power consumption of corresponding touch sensor can be lower.
Preferably, the zinc oxide nanowire is the cylindrical material being made up of the ZnO of hexagonal wurtzite structure.
Wherein, the cylindrical material that the ZnO of hexagonal wurtzite structure is formed is sufficiently stable, utilizes the method institute of Chemical self-assembly
The ZnO nano-wire of preparation can be evenly distributed in touch sensor, and this ZnO nanowire array touch sensor, which overcomes, leads
The shortcomings that electric rubber type sensor drift and hysteresis, the tactile data of feedback is more accurate.
Embodiment 3：
The present embodiment provides a kind of preparation method of touch sensor, as shown in figures 2-6, including following preparation process：
S01a, multiple second electrodes 22 uniformly arranged are formed on substrate 1；
Specifically, one layer of ITO can be deposited on substrate 1, second electrode 22 is formed after being patterned.
It is S01b, optional, the step of also including forming insulating barrier 4 after S01a steps；
Wherein, the effect of insulating barrier 4 is so that mutually insulated between the adjacent nm-class conducting wire 23 being subsequently formed.Tool
Body, insulating barrier 4 can be first covered on the substrate 1 for completing above-mentioned steps, then second electrode 22 will be corresponded in insulating barrier 4 again
On pre-set nm-class conducting wire 23 the insulating barrier 4 of position remove.
S02, more nm-class conducting wires 23 are formed in second electrode 22；
Specifically, providing the specific method of two kinds of formation nm-class conducting wires 23 herein, the first is can to use macromolecule network
Close reaction and more nm-class conducting wires 23 are self-assembly of in second electrode 22；Second is to prepare shape using saturated vapor reaction method
Cheng Duogen nm-class conducting wires 23.
Wherein, utilized by the use of the self-assembly method that chemically reacts to contain polar group high polymer long chain as self assembly network
Macromolecule complex reaction is self-assembly of the ZnO nano-wire being evenly distributed on substrate 1.ZnO nano-wire is as touch sensor
Sensing element, after touch sensor upper surface external object, the length of ZnO nano-wire itself reduces, so as to cause
Self-resistance reduces, and the electric current for causing to flow through becomes big.The change of feedback current is measured, so as to perceive the information of external pressure, according to
According to the external information of every ZnO nano-wire feedback, overall external information can be obtained.ZnO nano-wire is by stable hexagonal
The cylindrical material that the ZnO of wurtzite structure is formed, can uniformly be divided using the ZnO nano-wire prepared by the method for Chemical self-assembly
For cloth in touch sensor, this ZnO nanowire array touch sensor overcomes conductive rubber formula sensor drift and hysteresis
The shortcomings that, the tactile data of feedback is more accurate.
More specifically, first method can use macromolecule complexing and low-temperature oxidation sintering reaction, with polyvinyl alcohol
(PVA) high polymer material is complexed carrier to control crystal nucleation and growth as self assembly.First by uniformly dividing on PVA side chains
The polar group hydroxyl (- OH) of cloth and the Zn in zinc solution2+Complexing occurs for ion.Then ammoniacal liquor regulation complexing is added dropwise
Solution ph makes complex ion Zn for 8.5 ± 0.12+It is changed into Zn (OH)2, then substrate 1 immersed in this solution so as in the table of substrate 1
Face obtains more uniform Zn (OH)2Nano dot, then in 125 DEG C or so Zn (OH)2Nano dot is converted into ZnO by thermal decomposition and received
Rice point thereafter the ZnO nano point in 420 DEG C of sintering processes on substrate 1 in confinement of the PVA macromolecule networks skeleton to its diameter
Gradual oriented growth is into ZnO nano-wire down.
ZnO nano-wire is evenly distributed on substrate 1, has hexagonal wurtzite structure, and mostly along direction preferred orientation
Growth, a diameter of 100nm, length are 1 μm.
S03, first electrode 21 is formed on nm-class conducting wire 23.
Specifically, first electrode 21 can use grapheme material, graphene has good conduction, printing opacity, flexible
Characteristic, it is suitable as first electrode 21.
S04, optional, the step of also including forming flexible cover sheet 3 after S03 steps, flexible cover sheet 3 can be by rubber
Or other flexible materials composition.
Obviously, also many modifications may be made to for the embodiment of the various embodiments described above；Such as：The specific size of each electrode
It can be changed according to being actually needed；Specific material of each structure sheaf etc. can be adjusted according to being actually needed.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
- A kind of 1. touch sensor, it is characterised in that including substrate, the multiple pressure drag tactiles uniformly arranged being formed on substrate Unit, the pressure drag haptic unit include first electrode, the second electrode being oppositely arranged, and are clipped in first electrode, the second electricity More nm-class conducting wires between pole.
- 2. touch sensor according to claim 1, it is characterised in that the second electrode is compared to the first electrode Set closer to substrate, one side of the first electrode away from the nm-class conducting wire is provided with the flexible cover sheet for touching.
- 3. touch sensor according to claim 2, it is characterised in that the touch sensor also includes and described second The detection unit of electrode connection, for measuring nm-class conducting wire electric current, resistance or the change of voltage.
- 4. touch sensor according to claim 1, it is characterised in that between the adjacent nm-class conducting wire mutually absolutely Edge.
- 5. touch sensor according to claim 1, it is characterised in that what the first electrode was uniformly arranged including more Row electrode, the second electrode includes the more row electrodes uniformly arranged, and the bearing of trend of row electrode and row electrode mutually hangs down Directly.
- 6. touch sensor according to claim 1, it is characterised in that a diameter of 10-300nm of the nm-class conducting wire, On the direction of the substrate, the size of the nm-class conducting wire is 0.5-50 μm.
- 7. touch sensor according to claim 1, it is characterised in that the first electrode is made up of grapheme material, The second electrode is made up of ITO；The nm-class conducting wire includes silver metal nano wire, zinc oxide nanowire.
- 8. touch sensor according to claim 7, it is characterised in that the zinc oxide nanowire is by stable hexagonal The cylindrical material that the ZnO of wurtzite structure is formed.
- 9. a kind of preparation method of touch sensor, it is characterised in that including following preparation process：Multiple second electrodes uniformly arranged are formed on substrate；More nm-class conducting wires are formed on the second electrode；First electrode is formed on nm-class conducting wire.
- 10. the preparation method of touch sensor according to claim 7, it is characterised in that more nanometers of the formation are led Line is to be self-assembly of more nm-class conducting wires on the second electrode using macromolecule complex reaction；OrPrepare to form more nm-class conducting wires using saturated vapor reaction method.
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Cited By (3)
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| CN115504428A (en) * | 2021-06-22 | 2022-12-23 | 中国科学院微电子研究所 | A nanowire sensor and its preparation method |
| TWI803033B (en) * | 2021-10-26 | 2023-05-21 | 大陸商鵬鼎控股（深圳）股份有限公司 | Pressure sensing device and method of fabricating thereof |
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Application publication date: 20171226 |