CN107509311A - The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode - Google Patents
The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode Download PDFInfo
- Publication number
- CN107509311A CN107509311A CN201710516294.7A CN201710516294A CN107509311A CN 107509311 A CN107509311 A CN 107509311A CN 201710516294 A CN201710516294 A CN 201710516294A CN 107509311 A CN107509311 A CN 107509311A
- Authority
- CN
- China
- Prior art keywords
- copper
- base material
- clad plate
- powder
- plate base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
Abstract
The present invention relates to copper-clad plate technical field, and in particular to the method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode, the operating process of product：1st, dielectric constant be 50 100, loss mixed less than 0.0001 ceramic powder with polytetrafluoroethylene (PTFE) powder, technical characteristic：(a) ceramic powder particle diameter is by polytetrafluoroethylene (PTFE) powder particle diameter burden；(b) ceramic powder will be well mixed with polytetrafluoroethylene (PTFE) powder.2nd, two kinds of powder forming and sinterings are processed into blank, technical characteristic:(a) 100kg/cm2 of pressure 60 during two kinds of thing powder shapings；(b) sintering temperature is 380 DEG C and the time is 50h.3rd, blank is lathed plate, for thickness of slab from 0.5 9mm, this plate is the copper-clad plate base material of 6.5≤Dk≤10, without using glass fabric bigger than normal, energy-conserving and environment-protective are lost in manufacture craft of the present invention；Because polytetrafluoroethylene (PTFE) and ceramic powder loss are small, 6.5 obtained≤Dk≤10 copper-clad plate substrate medium losses are low.
Description
Technical field
The present invention relates to copper-clad plate technical field, and in particular to a kind of to make covering for 6.5≤Dk≤10 using turning mode
The method of copper coin base material.
Background technology
Prior art using high-k filler doping ptfe emulsion resin, by filler and resin batch mixing,
The baking of glass fabric gluing is made the copper-clad plate base material of 6.5≤Dk≤10, complex process and can cause environmental pollution.Skill of the present invention
Art mixes the ceramic powder and polytetrafluoroethylene (PTFE) powder that dielectric constant is 50-100, and various thickness are lathed after forming and sintering
Plate, thickness of slab can be achieved from 0.5-9mm, and this plate is exactly the base material for making the copper-clad plate of 6.5≤Dk≤10.The present invention without using
The glass fabric of copper-clad plate upstream firm production, saves resource；Without using the glass fabric for being lost bigger than normal base material is situated between
Matter loss reduces.
The content of the invention
(1) technical problem solved
In view of the shortcomings of the prior art, copper is covered using what turning mode made 6.5≤Dk≤10 the invention provides a kind of
The method of plate base material so that without using the glass fabric that loss is bigger than normal, energy-conserving and environment-protective in manufacture craft；Due to polytetrafluoroethylene (PTFE)
It is relatively low that 6.5 small, obtained≤Dk≤10 copper-clad plate substrate medium losses are lost with ceramic powder.
(2) technical scheme
To realize object above, the present invention is achieved by the following technical programs：
A kind of method for the copper-clad plate base material that 6.5≤Dk≤10 are made using turning mode, it is characterised in that：Including following
Operating procedure：
1. dielectric constant is the titanium dioxide of 50-100, loss less than 0.00005, calcium titanate hybrid ceramic powder and poly- four
PVF powder mixes；
2. two kinds of powder forming and sinterings are processed into blank；
3. blank is lathed plate, this plate is the copper-clad plate base material of 6.5≤Dk≤10.
Preferably, the hybrid ceramic powder particle size of the step 1. is by polytetrafluoroethylene (PTFE) powder particle diameter burden.
Preferably, the ceramic powder of the step 1. will be well mixed with polytetrafluoroethylene (PTFE) powder.
Preferably, pressure is 60-100kg/cm when the two kinds of powder powder of the step 2. are molded2。
Preferably, sintering temperature is 380 DEG C during step sintering 2. and sintering time is 50h.
Preferably, the thickness range of the plate of the step 3. is 0.5-9mm, and turning device therefor is peeler.
Preferably, 1. the mass ratio of hybrid ceramic powder titanium dioxide and calcium titanate is 4 to the step:6 to 3:7；Ceramics
The dielectric constant 50-100 of powder.
Preferably, 1. ceramic powder accounts for polytetrafluoroethylene (PTFE) powder and the ratio of ceramic powder sum to the step is 40-60%.
(3) beneficial effect
6.5≤Dk that prior art is produced≤10 copper-clad plate base material shortcoming losses are bigger than normal, the production consumption of glass fabric
The environmental pollution that can and bring.Without using the glass fabric that loss is bigger than normal, energy-conserving and environment-protective in manufacture craft of the present invention；Due to poly-
Tetrafluoroethene and ceramic powder loss are small, and 6.5 obtained≤Dk≤10 copper-clad plate substrate medium losses are low.
Embodiment
, below will be in the embodiment of the present invention to make the purpose, technical scheme and advantage of the embodiment of the present invention clearer
Technical scheme be clearly and completely described, it is clear that described embodiment is part of the embodiment of the present invention, rather than
Whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, belongs to the scope of protection of the invention.
A kind of method for the copper-clad plate base material that 6.5≤Dk≤10 are made using turning mode, including following operating procedure：
1. dielectric constant is the titanium dioxide of 50-100, loss less than 0.00005, calcium titanate hybrid ceramic powder and poly- four
PVF powder mixes；
2. two kinds of powder forming and sinterings are processed into blank；
3. blank is lathed plate, this plate is the copper-clad plate base material of 6.5≤Dk≤10.
The hybrid ceramic powder particle size of step 1. is by polytetrafluoroethylene (PTFE) powder particle diameter burden.
The ceramic powder of step 1. will be well mixed with polytetrafluoroethylene (PTFE) powder.
Pressure is 60-100kg/cm when the two kinds of powder powder of step 2. are molded2。
Sintering temperature is 380 DEG C during step sintering 2. and sintering time is 50h.
The thickness range of the plate of step 3. is 0.5-9mm, and turning device therefor is peeler.
1. the mass ratio of hybrid ceramic powder titanium dioxide and calcium titanate is 4 to step:6 to 3:7；The dielectric of ceramic powder is normal
Number 50-100.
1. ceramic powder accounts for polytetrafluoroethylene (PTFE) powder and the ratio of ceramic powder sum to step is 40-60%.
6.5≤Dk that prior art is produced≤10 copper-clad plate base material shortcoming losses are bigger than normal, the production consumption of glass fabric
The environmental pollution that can and bring.Without using the glass fabric that loss is bigger than normal, energy-conserving and environment-protective in manufacture craft of the present invention；Due to poly-
Tetrafluoroethene and ceramic powder loss are small, and 6.5 obtained≤Dk≤10 copper-clad plate substrate medium losses are low.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those
Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element also be present in process, method, article or equipment including the key element.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
The present invention is described in detail, it will be understood by those within the art that：It still can be to foregoing each implementation
Technical scheme described in example is modified, or carries out equivalent substitution to which part technical characteristic；And these modification or
Replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (9)
- A kind of 1. method for the copper-clad plate base material that 6.5≤Dk≤10 are made using turning mode, it is characterised in that：Including following behaviour Make step：1. dielectric constant is titanium dioxide, calcium titanate hybrid ceramic powder and the polytetrafluoroethyl-ne of 50-100, loss less than 0.00005 Alkene powder mixes；2. two kinds of powder forming and sinterings are processed into blank；3. blank is lathed into plate, this plate is the copper-clad plate base material of 6.5≤Dk≤10.
- 2. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：The hybrid ceramic powder particle size of the step 1. is by polytetrafluoroethylene (PTFE) powder particle diameter burden.
- 3. the method for the copper-clad plate base material according to claim 1 or 2 that 6.5≤Dk≤10 are made using turning mode, its It is characterised by：The hybrid ceramic powder of the step 1. will be well mixed with polytetrafluoroethylene (PTFE) powder.
- 4. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：Pressure is 60-100kg/cm2 when the two kinds of powders of the step 2. are molded.
- 5. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：The temperature sintered during step sintering 2. is 380 DEG C and sintering time is 50h.
- 6. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：The plate thickness scope of the step 3. turning is 0.5-9mm, and turning device therefor is peeler.
- 7. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：1. the mass ratio of hybrid ceramic powder titanium dioxide and calcium titanate is 4 to the step:6 to 3:7；The dielectric of ceramic powder Constant 50-100.
- 8. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：1. ceramic powder accounts for polytetrafluoroethylene (PTFE) powder and the ratio of ceramic powder sum to the step is 40-60%.
- 9. the method for the copper-clad plate base material according to claim 1 that 6.5≤Dk≤10 are made using turning mode, its feature It is：The copper-clad plate base material of 6.5≤Dk≤10 is made using the method for turning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516294.7A CN107509311A (en) | 2017-06-29 | 2017-06-29 | The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516294.7A CN107509311A (en) | 2017-06-29 | 2017-06-29 | The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107509311A true CN107509311A (en) | 2017-12-22 |
Family
ID=60679536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710516294.7A Pending CN107509311A (en) | 2017-06-29 | 2017-06-29 | The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107509311A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108501488A (en) * | 2018-05-18 | 2018-09-07 | 吴东建 | A kind of high-frequency high-speed copper-clad plate and preparation method thereof |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN110602888A (en) * | 2019-09-18 | 2019-12-20 | 中国电子科技集团公司第四十六研究所 | Preparation method of aluminum-lined high-frequency substrate |
| CN111016231A (en) * | 2019-12-20 | 2020-04-17 | 江苏泰氟隆科技有限公司 | PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335180A (en) * | 1978-12-26 | 1982-06-15 | Rogers Corporation | Microwave circuit boards |
| CN102350825A (en) * | 2011-05-30 | 2012-02-15 | 周涛 | Process for preparing fluorine-containing high polymer high frequency circuit board material by hydrothermal method |
| CN106604536A (en) * | 2017-01-26 | 2017-04-26 | 上海逻骅投资管理合伙企业（有限合伙） | Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof |
-
2017
- 2017-06-29 CN CN201710516294.7A patent/CN107509311A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335180A (en) * | 1978-12-26 | 1982-06-15 | Rogers Corporation | Microwave circuit boards |
| CN102350825A (en) * | 2011-05-30 | 2012-02-15 | 周涛 | Process for preparing fluorine-containing high polymer high frequency circuit board material by hydrothermal method |
| CN106604536A (en) * | 2017-01-26 | 2017-04-26 | 上海逻骅投资管理合伙企业（有限合伙） | Polytetrafluoroethylene composite microwave dielectric material and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108501488A (en) * | 2018-05-18 | 2018-09-07 | 吴东建 | A kind of high-frequency high-speed copper-clad plate and preparation method thereof |
| CN110602888A (en) * | 2019-09-18 | 2019-12-20 | 中国电子科技集团公司第四十六研究所 | Preparation method of aluminum-lined high-frequency substrate |
| CN110564085A (en) * | 2019-09-20 | 2019-12-13 | 天津市天塑滨海氟塑料制品有限公司 | Manufacturing method of PTFE ceramic modified substrate film for high-performance circuit board |
| CN111016231A (en) * | 2019-12-20 | 2020-04-17 | 江苏泰氟隆科技有限公司 | PTFE ceramic film for 5G network high-performance copper-clad plate and processing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107509311A (en) | The method that the copper-clad plate base material of 6.5≤Dk≤10 is made using turning mode | |
| CN102730672A (en) | Production technology of large-specification extraordinary isotropic graphite material | |
| CN107311517A (en) | The method that Dk ＞ 10 copper-clad plate base material is made using turning mode | |
| CN105949725B (en) | A kind of epoxy resin-matrix high-dielectric composite material and preparation method thereof | |
| CN103101195B (en) | Preparation method of PTFE (Poly Tetra Fluoro Ethylene) film for flexible sealing board | |
| CN111849097B (en) | Preparation method of high-frequency low-dielectric material | |
| CN102219523A (en) | Low-temperature co-firing ceramic wave-absorbing material and preparation method thereof | |
| CN109203525A (en) | A kind of manufacturing process of high-strength polytetrafluoroethyl-ne film | |
| CN107493653A (en) | The high frequency FPC of Dk ＞ 10 are made using turning ion implanting plating mode | |
| CN111187478A (en) | Composite material and sheet for microwave circuit substrate, microwave circuit substrate and preparation method of microwave circuit substrate | |
| CN104311024A (en) | Microwave dielectric ceramic material with moderate dielectric constant and high quality factor and preparation method of microwave dielectric ceramic material | |
| CN107382291A (en) | The preparation method of the copper-clad plate base materials of 2.2≤Dk ＜ 6.5 | |
| CN107509308A (en) | The high frequency FPC of 6.5≤Dk≤10 is made using turning ion implanting plating mode | |
| CN107172821A (en) | The method for manufacturing cover clad laminate of 2.2≤Dk of one kind ＜ 6.5 | |
| CN103864426A (en) | Medium-sintering temperature stable microwave dielectric ceramic material | |
| CN107509312A (en) | A kind of preparation method of Dk ＞ 10 copper-clad plate | |
| EP3733776A1 (en) | Radome substrate and preparation method therefor | |
| CN101423645B (en) | A kind of dielectric composite material and preparation method thereof | |
| CN103000369A (en) | Method for preparing high voltage-resisting chip type ceramic capacitor | |
| CN112389038A (en) | High-dielectric and low-loss material based on capacitance and inductance synergistic effect and preparation method thereof | |
| CN106142754A (en) | Resin composition and high-frequency circuit base material manufactured by same | |
| CN104108694B (en) | A kind of negative thermal expansion material HfMnMo 2pO 12and preparation method thereof | |
| CN106565214A (en) | High-performance high-voltage capacitor ceramic material and preparation method thereof | |
| CN108299713A (en) | A kind of doping antibacterial oxide type high-strength polyethylene film and preparation method thereof | |
| CN107618122B (en) | The preparation method of polyether ketone ketone fine powder |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171222 |