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CN107500768A - A kind of preparation method of boron carbide ceramics, boron carbide ceramics and application thereof - Google Patents

A kind of preparation method of boron carbide ceramics, boron carbide ceramics and application thereof Download PDF

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CN107500768A
CN107500768A CN201710607749.6A CN201710607749A CN107500768A CN 107500768 A CN107500768 A CN 107500768A CN 201710607749 A CN201710607749 A CN 201710607749A CN 107500768 A CN107500768 A CN 107500768A
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boron carbide
preparation
silicate glass
powder
sintering
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柯于斌
曹磊
陶举洲
杜慧玲
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Institute of High Energy Physics of CAS
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Abstract

The application discloses a preparation method of boron carbide ceramic, the boron carbide ceramic and application thereof. The preparation method of the boron carbide ceramic comprises the steps of (1) uniformly mixing boron carbide powder and silicate glass powder to prepare a mixture; (2) adding a binder solution into the mixture, and granulating; (3) pouring the granulated particles into a mould, and pressing a biscuit at 5-30 MPa; (4) and drying the biscuit, and sintering the biscuit at a temperature lower than 1000 ℃ in an inert atmosphere, a reducing atmosphere or vacuum to prepare the boron carbide ceramic. The method realizes the low-temperature normal-pressure sintering of the boron carbide ceramic, and has the advantages of low energy consumption, simple and easy operation and low cost; the silicate glass powder has rich raw materials, low price and easy obtainment, thereby further reducing the cost; the prepared boron carbide ceramic contains no hydrogen, can greatly reduce neutron scattering background, and is particularly suitable for manufacturing neutron absorption and shielding devices around detectors. The method lays a foundation for the mass and large-scale production of the boron carbide ceramic material with good neutron shielding effect.

Description

一种碳化硼陶瓷的制备方法、碳化硼陶瓷及其应用A kind of preparation method of boron carbide ceramics, boron carbide ceramics and application thereof

技术领域technical field

本申请涉及碳化硼陶瓷领域,特别是涉及一种碳化硼陶瓷的制备方法,制备的碳化硼陶瓷,及其应用。The present application relates to the field of boron carbide ceramics, in particular to a method for preparing boron carbide ceramics, the prepared boron carbide ceramics, and applications thereof.

背景技术Background technique

碳化硼,别名黑钻石,通常为灰黑色微粉,是一种硬度仅次于金刚石和立方氮化硼的物质,莫氏硬度9.3,显微硬度55-67Gpa。碳化硼的化学稳定性好,常温下不与酸、碱和大多数化合物反应,仅在氢氟酸一硫酸、氢氟酸一硝酸混合物中有缓慢的腐蚀,是化学性质最稳定的化合物之一。同时,碳化硼密度小仅2.52g/cm3、高温硬度高,还有着优良的慢中子吸收能力。因此,碳化硼在耐磨、耐腐蚀器件、防弹材料、发动机喷头、喷砂嘴、陶瓷轴承、研磨介质、核能以及中子屏蔽材料等领域都有着重要的应用。Boron carbide, also known as black diamond, is usually gray-black micropowder. It is a substance whose hardness is second only to diamond and cubic boron nitride. The Mohs hardness is 9.3 and the microhardness is 55-67Gpa. Boron carbide has good chemical stability. It does not react with acids, alkalis and most compounds at room temperature. It only corrodes slowly in the mixture of hydrofluoric acid-sulfuric acid and hydrofluoric acid-nitric acid. It is one of the most stable chemical compounds. . At the same time, boron carbide has a low density of only 2.52g/cm 3 , high temperature hardness, and excellent slow neutron absorption capacity. Therefore, boron carbide has important applications in the fields of wear-resistant and corrosion-resistant devices, bullet-proof materials, engine nozzles, sandblasting nozzles, ceramic bearings, grinding media, nuclear energy, and neutron shielding materials.

由于碳化硼有着优良的中子吸收能力,使得其在核工业领域有着极其重要的地位。在目前传统的核工业领域使用较多的中子吸收材料就是碳化硼,在世界上已公布的反应堆中,相当大部分常选用碳化硼作为核反应堆的调节棒、控制棒、屏蔽棒以及中子屏蔽材料,其中屏蔽棒的重要性仅次于燃料元件。Boron carbide has an extremely important position in the nuclear industry because of its excellent neutron absorption capacity. Boron carbide is the most commonly used neutron absorbing material in the traditional nuclear industry at present. In the announced reactors in the world, quite a few of them often use boron carbide as the adjustment rods, control rods, shielding rods and neutron shielding of nuclear reactors. materials, the importance of shielding rods is second only to fuel elements.

碳化硼中C和B的原子半径很接近,二者的电负性相差很小,形成很强的共价键,共价键比例高达93.94%,导致纯碳化硼的致密化烧结极其困难。普通B4C粉末在2250-2300℃常压下烧结获得成品的相对密度只能达到80%-87%,通常需要使用碳化硼超细粉末并采用热压烧结、热等静压烧结或者近些年发展起来的放电等离子烧结(缩写SPS)技术在2000℃以上进行烧结;目前即使是加入烧结助剂其烧结温度也在1600℃以上。例如专利CN1541981A通过2200℃-2300℃的热压烧结制备轻质碳化硼装甲陶瓷;蒋国新和王声宏在1995年的文献报道“碳化硼的低温热压”中使用粒径小于1μm的碳化硼粉,添加Al2O3作为烧结助剂,在1750℃、35MPa热压条件下制备碳化硼陶瓷陶瓷。由于现有的碳化硼陶瓷的烧结工艺复杂、能耗高、成本昂贵,限制了其使用,也不适合大规模产业化生产。The atomic radii of C and B in boron carbide are very close, and the difference in electronegativity between the two is very small, forming a strong covalent bond with a covalent bond ratio as high as 93.94%, which makes the densification and sintering of pure boron carbide extremely difficult. Ordinary B 4 C powder is sintered at 2250-2300°C under normal pressure to obtain a relative density of the finished product that can only reach 80%-87%. Usually, it is necessary to use boron carbide ultrafine powder and adopt hot pressing sintering, hot isostatic pressing sintering or recent The spark plasma sintering (abbreviated as SPS) technology developed in 2009 is sintered at above 2000°C; even with the addition of sintering aids, the sintering temperature is above 1600°C. For example, the patent CN1541981A prepares lightweight boron carbide armored ceramics by hot pressing and sintering at 2200 ° C to 2300 ° C; Al 2 O 3 was used as a sintering aid to prepare boron carbide ceramics under the conditions of 1750℃ and 35MPa hot pressing. Due to the complex sintering process, high energy consumption and high cost of the existing boron carbide ceramics, its use is limited, and it is not suitable for large-scale industrial production.

中子是人类探索物质微观世界的有力手段,中子不带电、具有磁矩、穿透力强、能分辨轻元素、同位素和近邻元素,且对样品无破坏性,因此中子散射技术在生物、生命、国家能源、环境和新材料等研究领域有着重要作用。为适应不同领域的应用要求,需要建设各类不同用途的中子散射谱仪。在中子散射谱仪的设计建造中,信噪比是衡量各类谱仪性能的一个共同的重要指标。为了降低杂散中子所造成的谱仪的本底,需要在谱仪束线周围大量使用中子吸收材料。尤其是靠近中子探测器的束线周围,要求采用的中子吸收材料尽可能少的含有易产生杂散信号的活化元素如Ni、Co、Cu等元素和非弹性中子散射截面较大的元素如典型的H元素。而现有基于碳化硼的中子吸收材料为增强对高能中子的慢化效应,大多含有较多的H元素,如含硼聚乙烯等。专利CN 104310400A使用胶体粘结固化制备成型的碳化硼基中子吸收体,虽然降低了氢元素含量,但是该材料中仍含有一定量的氢元素,不适于用作探测器周围的中子吸收材料。Neutrons are a powerful means for human beings to explore the microscopic world of matter. Neutrons are uncharged, have magnetic moments, strong penetrating power, can distinguish light elements, isotopes and neighboring elements, and are non-destructive to samples. Therefore, neutron scattering technology is widely used in biology, Research fields such as life, national energy, environment and new materials play an important role. In order to meet the application requirements in different fields, it is necessary to build various types of neutron scattering spectrometers for different purposes. In the design and construction of neutron scattering spectrometers, the signal-to-noise ratio is a common and important index to measure the performance of various spectrometers. In order to reduce the background of the spectrometer caused by stray neutrons, it is necessary to use a large number of neutron-absorbing materials around the beamline of the spectrometer. Especially around the beamline of the neutron detector, it is required that the neutron absorbing material used should contain as few active elements as possible to generate stray signals, such as Ni, Co, Cu, etc. Elements such as typical H elements. However, most of the existing boron carbide-based neutron absorbing materials contain more H elements in order to enhance the moderation effect on high-energy neutrons, such as boron-containing polyethylene. Patent CN 104310400A uses colloidal bonding and solidification to prepare a shaped boron carbide-based neutron absorber. Although the hydrogen content is reduced, the material still contains a certain amount of hydrogen, which is not suitable for use as neutron absorbing materials around the detector. .

发明内容Contents of the invention

本申请的目的是提供一种新的碳化硼陶瓷的制备方法,制备的无氢碳化硼陶瓷及其应用。The purpose of this application is to provide a new preparation method of boron carbide ceramics, the prepared hydrogen-free boron carbide ceramics and its application.

本申请采用了以下技术方案:The application adopts the following technical solutions:

本申请的一方面公开了一种碳化硼陶瓷的制备方法,包括以下步骤,One aspect of the present application discloses a method for preparing boron carbide ceramics, comprising the following steps,

(1)将碳化硼粉和硅酸盐玻璃粉通过球磨或超声分散混合均匀,制成混合料;(1) Boron carbide powder and silicate glass powder are uniformly dispersed and mixed by ball milling or ultrasonic to make a mixture;

(2)在步骤(1)的混合料中加入粘结剂溶液,造粒;(2) Add binder solution in the compound of step (1), granulate;

(3)将步骤(2)制备的颗粒倒入模具中,在5-30MPa的压力下压制成素坯;(3) Pour the granules prepared in step (2) into a mould, and press it into a green body under a pressure of 5-30MPa;

(4)将步骤(3)的素坯烘干,然后在惰性气氛、还原性气氛或真空条件下烧结,制成碳化硼陶瓷,烧结的温度低于1000℃。(4) Drying the green body in step (3), and then sintering in an inert atmosphere, a reducing atmosphere or a vacuum condition to produce boron carbide ceramics, and the sintering temperature is lower than 1000°C.

其中,素坯烘干通常烘干至恒重;粘结剂溶液可以采用常规的粘结剂。Wherein, the green body is usually dried to a constant weight; the binder solution can use a conventional binder.

需要说明的是,本申请的制备方法,在碳化硼粉中添加硅酸盐玻璃粉,由于硅酸盐玻璃粉的引入,降低了烧结温度,首次实现了在低于1000℃的低温和常压下烧结制备碳化硼陶瓷。并且,本申请的制备方法,先对素坯进行烘干,去除其中大部分蒸馏水和易蒸发材料,最后在惰性气氛、还原性气氛或真空条件下烧结,克服了烧结过程中碳化硼的氧化问题,从而成功解决了烧结体吸水粉化问题,使制备的碳化硼陶瓷具有优异的防水性能。此外,本申请制备的碳化硼陶瓷中不含氢元素,特别适用于制作探测器周围的中子吸收和屏蔽器件。It should be noted that in the preparation method of this application, silicate glass powder is added to boron carbide powder. Due to the introduction of silicate glass powder, the sintering temperature is reduced, and the low temperature and normal pressure below 1000 ° C are realized for the first time. Boron carbide ceramics were prepared by sintering. Moreover, in the preparation method of the present application, the green body is first dried to remove most of the distilled water and evaporable materials, and finally sintered in an inert atmosphere, a reducing atmosphere or a vacuum condition, which overcomes the oxidation problem of boron carbide during the sintering process , so as to successfully solve the problem of water absorption and pulverization of the sintered body, so that the prepared boron carbide ceramics have excellent waterproof performance. In addition, the boron carbide ceramics prepared in the present application do not contain hydrogen elements, and are especially suitable for making neutron absorbing and shielding devices around detectors.

优选的,碳化硼粉占步骤(1)混合料总重量的50-90%,硅酸盐玻璃粉占步骤(1)混合料总重量的10-50%,粘结剂溶液的用量为步骤(1)混合料总重量的1.5-22%。Preferably, boron carbide powder accounts for 50-90% of the total weight of the mixture in step (1), silicate glass powder accounts for 10-50% of the total weight of the mixture in step (1), and the consumption of the binder solution is the step (1) 1) 1.5-22% of the total weight of the mixture.

需要说明的是,硅酸盐玻璃粉的加入会降低烧结温度,从而实现低温烧结,本申请的低温是指低于1000℃的温度,相对于现有的烧结方法来说属于低温;可以理解,硅酸盐玻璃粉加入的量会直接影响低温烧结的温度,但是,加入的量越大,也会影响碳化硼本身的材料性能,因此,本申请的优选方案中对碳化硼和硅酸盐玻璃粉的用量进行了限定,在实现低温烧结的同时,有效的保障碳化硼材料的自身性能。需要补充说明的是,本申请是在保障碳化硼陶瓷材料作为中子吸收屏蔽材料的角度限定的碳化硼和硅酸盐玻璃粉用量,如果是其它用途,例如耐磨耐腐蚀器件、防弹材料、发动机喷头、喷砂嘴、陶瓷轴承、研磨介质等,碳化硼和硅酸盐玻璃粉用量可以自行调整,只要能够实现低温烧结制备碳化硼陶瓷即可。It should be noted that the addition of silicate glass powder will reduce the sintering temperature, thereby achieving low-temperature sintering. The low temperature in this application refers to a temperature lower than 1000°C, which is a low temperature compared to the existing sintering methods; it can be understood that, The amount of silicate glass powder added will directly affect the temperature of low-temperature sintering, but the larger the amount added, it will also affect the material properties of boron carbide itself. Therefore, in the preferred solution of this application, boron carbide and silicate glass The amount of powder used is limited, while achieving low-temperature sintering, the performance of boron carbide materials can be effectively guaranteed. It should be added that this application is to ensure that boron carbide ceramic materials are used as neutron-absorbing shielding materials. If it is used for other purposes, such as wear-resistant and corrosion-resistant devices, bullet-proof materials, For engine nozzles, sandblasting nozzles, ceramic bearings, grinding media, etc., the amount of boron carbide and silicate glass powder can be adjusted by yourself, as long as it can be sintered at low temperature to prepare boron carbide ceramics.

优选的,碳化硼粉的纯度大于95wt.%,硅酸盐玻璃粉的纯度大于95wt.%,并且,碳化硼粉的粒径小于250微米。Preferably, the purity of the boron carbide powder is greater than 95wt.%, the purity of the silicate glass powder is greater than 95wt.%, and the particle size of the boron carbide powder is less than 250 microns.

优选的,硅酸盐玻璃粉中不含氢元素。Preferably, the silicate glass powder does not contain hydrogen.

需要说明的是,本申请的制备方法或者所制备的碳化硼陶瓷中,还可以含有其它添加剂,用以改善碳化硼陶瓷的性能,只要不含氢,不含易活化元素和非弹性中子散射截面较大的元素即可,其它掺杂元素或添加剂,可以参考现有的制备方法和碳化硼陶瓷,在此不做具体限定。It should be noted that the preparation method of the present application or the prepared boron carbide ceramics may also contain other additives to improve the performance of boron carbide ceramics, as long as it does not contain hydrogen, easily activated elements and non-elastic neutron scattering Elements with larger cross-sections are sufficient, and other doping elements or additives can refer to existing preparation methods and boron carbide ceramics, and are not specifically limited here.

优选的,粘结剂为聚乙烯醇、酚醛树脂、淀粉、糖类、纤维素和糊精中的至少一种。Preferably, the binder is at least one of polyvinyl alcohol, phenolic resin, starch, sugar, cellulose and dextrin.

优选的,素坯包括但不仅限于圆柱形、长条形或长板形。Preferably, the green body includes but not limited to a cylindrical shape, a strip shape or a long plate shape.

需要说明的是,素坯可以根据使用需求制备成各种形状,其中比较常见的即圆柱形、长条形或长板形。It should be noted that the green body can be prepared into various shapes according to the needs of use, among which the more common ones are cylindrical, long strip or long plate.

优选的,步骤(4)中烘干的温度低于100℃。Preferably, the drying temperature in step (4) is lower than 100°C.

优选的,步骤(4)中,烧结的温度为500℃-765℃,烧结时间为0.5h-4h。Preferably, in step (4), the sintering temperature is 500°C-765°C, and the sintering time is 0.5h-4h.

本申请的另一面公开了本申请的制备方法制备的碳化硼陶瓷。Another aspect of the present application discloses the boron carbide ceramic prepared by the preparation method of the present application.

需要说明的是,与现有的碳化硼材料相比,本申请的制备方法获得的碳化硼陶瓷,不含氢元素,特别适用于探测器周围的中子吸收屏蔽。It should be noted that, compared with the existing boron carbide materials, the boron carbide ceramics obtained by the preparation method of the present application do not contain hydrogen elements, and are especially suitable for neutron absorption shielding around detectors.

本申请的再一面公开了本申请的碳化硼陶瓷在中子吸收或中子屏蔽中的应用。Another aspect of the present application discloses the application of the boron carbide ceramic of the present application in neutron absorption or neutron shielding.

需要说明的是,本申请的碳化硼陶瓷不含氢元素,特别适用于探测器周围的中子吸收,因此可以应用于制备各种中子吸收或中子屏蔽的设备、零部件等。同样的,本申请的碳化硼陶瓷,也适用于一般的碳化硼材料的应用领域,例如耐磨耐腐蚀器件、防弹材料、发动机喷头、喷砂嘴、陶瓷轴承、研磨介质等。It should be noted that the boron carbide ceramics of the present application do not contain hydrogen elements, and are especially suitable for neutron absorption around detectors, so they can be applied to the preparation of various neutron absorption or neutron shielding equipment, parts, etc. Similarly, the boron carbide ceramics of the present application are also applicable to the application fields of general boron carbide materials, such as wear-resistant and corrosion-resistant devices, bullet-proof materials, engine nozzles, sandblasting nozzles, ceramic bearings, grinding media, etc.

本申请的有益效果在于:The beneficial effect of this application is:

本申请的碳化硼陶瓷制备方法,首次实现了碳化硼陶瓷的低温常压烧结,能耗低,制备工艺简单、易操作,大大节省了制备成本;所采用的硅酸盐玻璃粉添加材料原料丰富、价格低廉、十分容易获得,进一步降低了碳化硼陶瓷的原材料成本;并且,所制备的碳化硼陶瓷不含氢,特别适用于探测器周围的中子屏蔽吸收材料及器件。本申请的制备方法为大批量的规模化生产中子屏蔽效果良好的碳化硼陶瓷材料奠定了基础。The preparation method of boron carbide ceramics of the present application realizes sintering of boron carbide ceramics at low temperature and normal pressure for the first time, with low energy consumption, simple preparation process and easy operation, which greatly saves the preparation cost; the silicate glass powder used as an additive material is rich in raw materials , low price, very easy to obtain, further reducing the raw material cost of boron carbide ceramics; moreover, the prepared boron carbide ceramics do not contain hydrogen, and are especially suitable for neutron shielding absorbing materials and devices around detectors. The preparation method of the present application lays the foundation for mass production of boron carbide ceramic materials with good neutron shielding effects.

附图说明Description of drawings

图1是本申请实施例中制备的碳化硼陶瓷的X射线衍射分析图谱;Fig. 1 is the X-ray diffraction analysis spectrum of the boron carbide ceramics prepared in the embodiment of the present application;

图2是本申请实施例中制备的碳化硼陶瓷的差示扫描量热仪(缩写DSC)和热重(缩写TG)分析图谱;Fig. 2 is the differential scanning calorimetry (abbreviation DSC) and thermogravimetry (abbreviation TG) analysis collection of boron carbide ceramics prepared in the embodiment of the present application;

图3是本申请实施例中制备的碳化硼陶瓷的扫描电子显微镜图;Fig. 3 is the scanning electron microscope picture of the boron carbide ceramics prepared in the embodiment of the present application;

图4是本申请实施例中制备的碳化硼陶瓷的EDS能谱分析图和成分列表;Fig. 4 is the EDS energy spectrum analysis figure and composition list of the boron carbide ceramics prepared in the embodiment of the present application;

图5是本申请实施例中制备的碳化硼陶瓷的EDS能谱分析图和成分列表。Fig. 5 is an EDS energy spectrum analysis diagram and a composition list of boron carbide ceramics prepared in the examples of the present application.

具体实施方式detailed description

现有的中子吸收材料主要是碳化硼,但是,碳化硼烧结工艺条件复杂、成本高;并且,现有的碳化硼复合材料中仍含有一定量的氢元素,其较强的非弹性散射效应在用于中子吸收材料时会增加散射背底。因此,本申请经过大量研究和试验发现,在碳化硼粉中添加硅酸盐玻璃粉,能够有效的降低烧结温度,实现低温常压烧结,大大降低了烧结温度,降低生产能耗。并且,采用申请的制备方法获得的碳化硼陶瓷不含氢,特别适用于探测器周围的中子屏蔽吸收。The existing neutron absorbing material is mainly boron carbide, but the boron carbide sintering process conditions are complicated and the cost is high; moreover, the existing boron carbide composite material still contains a certain amount of hydrogen, and its strong inelastic scattering effect Adds scattering background when used with neutron absorbing materials. Therefore, the present application has found through a lot of research and experiments that adding silicate glass powder to boron carbide powder can effectively reduce the sintering temperature, realize low temperature and normal pressure sintering, greatly reduce the sintering temperature and reduce production energy consumption. Moreover, the boron carbide ceramics obtained by the preparation method of the application do not contain hydrogen, and are especially suitable for neutron shielding and absorption around detectors.

下面通过具体实施例对本申请作进一步详细说明。以下实施例仅对本申请进行进一步说明,不应理解为对本申请的限制。The present application will be described in further detail below through specific examples. The following examples only further illustrate the present application, and should not be construed as limiting the present application.

实施例一Embodiment one

本例采用重量份70%的碳化硼粉和重量份30%的硅酸盐玻璃粉制备碳化硼陶瓷,粘结剂溶液采用浓度5wt%的聚乙烯醇溶液,具体制备方法如下:In this example, 70% by weight of boron carbide powder and 30% by weight of silicate glass powder are used to prepare boron carbide ceramics. The binder solution is a polyvinyl alcohol solution with a concentration of 5 wt%. The specific preparation method is as follows:

(1)将70g碳化硼粉和30g硅酸盐玻璃粉通过球磨混合均匀,制成混合料;(1) 70g boron carbide powder and 30g silicate glass powder are mixed uniformly by ball milling to make a mixture;

(2)在步骤(1)的混合料中加入2g浓度5wt%的PVA溶液和适量蒸馏水,手动搅拌造粒成约400微米的颗粒;(2) Add 2g concentration of 5wt% PVA solution and an appropriate amount of distilled water in the mixture of step (1), manually stir and granulate into particles of about 400 microns;

(3)将步骤(2)制备的颗粒倒入金属模具中,在10MPa的压力下压制成直径为19.05mm高为4.8mm左右的圆柱形素坯;(3) Pour the granules prepared in step (2) into a metal mold, and press under a pressure of 10 MPa to form a cylindrical green body with a diameter of 19.05 mm and a height of about 4.8 mm;

(4)将步骤(3)的素坯在60℃下干燥至恒重,然后放入真空烧结炉中,抽真空并充入氮气,在氮气气氛下,待真空度下降到1×100Pa以下后,以2℃/min的升温速率升温至500℃,保温30min,以彻底排去有机物粘结剂,再以4℃/min的升温速率升温至765℃,保温90min,然后随炉冷却,得到本例的碳化硼陶瓷,形状和素坯基本保持一致。(4) Dry the biscuit in step (3) to constant weight at 60°C, then put it into a vacuum sintering furnace, evacuate it and fill it with nitrogen, and in a nitrogen atmosphere, wait until the vacuum degree drops to 1×10 0 Pa After that, raise the temperature to 500°C at a heating rate of 2°C/min and hold for 30 minutes to completely remove the organic binder, then raise the temperature to 765°C at a heating rate of 4°C/min, hold for 90 minutes, and then cool with the furnace Obtain the boron carbide ceramics of this example, the shape is basically consistent with the green body.

实施例二Embodiment two

本例采用重量份60%的碳化硼粉和重量份40%的硅酸盐玻璃粉制备碳化硼陶瓷,粘结剂溶液采用浓度5wt%的聚乙烯醇溶液。具体的,将60g碳化硼粉和40g硅酸盐玻璃粉通过球磨混合均匀,制成混合料;其余与实施例一相同,最后在真空烧结炉中烧结,随炉冷却,得到本例的碳化硼陶瓷。In this example, 60% by weight boron carbide powder and 40% by weight silicate glass powder are used to prepare boron carbide ceramics, and the binder solution is polyvinyl alcohol solution with a concentration of 5 wt%. Specifically, 60g of boron carbide powder and 40g of silicate glass powder are mixed uniformly by ball milling to make a mixture; the rest are the same as in Example 1, and finally sintered in a vacuum sintering furnace and cooled with the furnace to obtain the boron carbide of this example ceramics.

实施例三Embodiment Three

本例采用重量份70%的碳化硼粉和重量份30%的硅酸盐玻璃粉制备碳化硼陶瓷,粘结剂溶液采用浓度5wt%的聚乙烯醇溶液,具体制备方法如下:In this example, 70% by weight of boron carbide powder and 30% by weight of silicate glass powder are used to prepare boron carbide ceramics. The binder solution is a polyvinyl alcohol solution with a concentration of 5 wt%. The specific preparation method is as follows:

(1)将70g碳化硼粉和30g硅酸盐玻璃粉通过球磨混合均匀,制成混合料;(1) 70g boron carbide powder and 30g silicate glass powder are mixed uniformly by ball milling to make a mixture;

(2)在步骤(1)的混合料中加入2g浓度5wt%的PVA溶液和适量蒸馏水,造粒;(2) Add 2g concentration of 5wt% PVA solution and appropriate amount of distilled water in the mixture of step (1), granulate;

(3)将步骤(2)制备的颗粒倒入金属模具中,在10MPa的压力下压制成直径为19.05mm高为4.8mm左右的圆柱形素坯;(3) Pour the granules prepared in step (2) into a metal mold, and press under a pressure of 10 MPa to form a cylindrical green body with a diameter of 19.05 mm and a height of about 4.8 mm;

(4)将步骤(3)的素坯在60℃下干燥至恒重,然后放入氮气气氛烧结炉中,预先通氮气10min,氮气流量设置为30mL/min,然后以2℃/min的升温速率升温至500℃,保温30min,再以4℃/min的升温速率升温至765℃,保温90min,然后随炉冷却,得到本例的碳化硼陶瓷,形状和素坯基本保持一致。(4) Dry the biscuit in step (3) at 60°C to constant weight, then put it into a nitrogen atmosphere sintering furnace, pass nitrogen gas for 10 minutes in advance, set the nitrogen flow rate to 30mL/min, and then increase the temperature at 2°C/min Raise the temperature to 500°C, hold for 30 minutes, then raise the temperature to 765°C at a heating rate of 4°C/min, hold for 90 minutes, and then cool with the furnace to obtain the boron carbide ceramic of this example, whose shape is basically consistent with the green body.

实施例四Embodiment Four

本例采用重量份80%的碳化硼粉和重量份20%的硅酸盐玻璃粉制备碳化硼陶瓷,粘结剂溶液采用浓度5wt%的聚乙烯醇溶液。具体的,将80g碳化硼粉和20g硅酸盐玻璃粉通过球磨混合均匀,制成混合料;其余与实施例三相同,最后在氮气气氛烧结炉中烧结,随炉冷却,得到本例的碳化硼陶瓷。In this example, 80% by weight of boron carbide powder and 20% by weight of silicate glass powder are used to prepare boron carbide ceramics, and the binder solution is a polyvinyl alcohol solution with a concentration of 5wt%. Specifically, 80g of boron carbide powder and 20g of silicate glass powder are uniformly mixed by ball milling to make a mixture; the rest are the same as in Example 3, and finally sintered in a nitrogen atmosphere sintering furnace and cooled with the furnace to obtain the carbonization of this example. boron ceramics.

参考GB/T 6569-2006和GB/T 3808-2002,采用三点弯曲实验分别测定本申请四个实施例制备的碳化硼陶瓷的弯曲前度;使用摆锤式冲击试验机测定本申请四个实施例制备的碳化硼陶瓷的冲击韧性;测试结果如表1所示。With reference to GB/T 6569-2006 and GB/T 3808-2002, three-point bending experiments were used to measure the bending front of the boron carbide ceramics prepared in the four examples of the application; The impact toughness of the boron carbide ceramics prepared in the examples; the test results are shown in Table 1.

采用Archimede排水法测定四个实施例制备的碳化硼陶瓷的密度和显气孔率,测试结果如表1所示。The density and apparent porosity of the boron carbide ceramics prepared in the four examples were measured by the Archimede drainage method, and the test results are shown in Table 1.

表1碳化硼陶瓷性能测试Table 1 Performance test of boron carbide ceramics

实施例Example 密度(g/cm3)Density (g/cm 3 ) 显气孔率(%)Apparent porosity(%) 冲击韧性(kJ/m2)Impact toughness (kJ/m 2 ) 弯曲强度(MPa)Bending strength (MPa) 11 1.6221.622 22.9322.93 2.362.36 28.8928.89 22 1.7011.701 19.1919.19 2.842.84 36.2836.28 33 1.5601.560 25.9325.93 2.732.73 24.6524.65 44 1.5311.531 28.0728.07 1.761.76 15.8115.81

表1的结果显示,随着硅酸盐玻璃成分的提高,碳化硼陶瓷的力学性能,即弯曲强度和冲击韧性,以及密度都随着提高,气孔率随之降低;而在氮气气氛和真空中烧结相比,真空烧烧结密度和弯曲强度较大,而氮气气氛中烧结的显气孔率和冲击韧性相对较大。The results in Table 1 show that as the composition of silicate glass increases, the mechanical properties of boron carbide ceramics, namely, the bending strength and impact toughness, as well as the density increase, and the porosity decreases; while in nitrogen atmosphere and vacuum Compared with sintering, vacuum sintering has higher sintering density and bending strength, while sintering in nitrogen atmosphere has relatively higher apparent porosity and impact toughness.

使用国际通用的MCNPX软件计算不同配比下不同厚度的碳化硼陶瓷材料对不同波长中子的透过率,不同波长中子即不同能量的中子。其中,不同配比是指,碳化硼粉末的重量份,例如碳化硼为90wt.%,则硅酸盐玻璃粉为10wt.%,碳化硼为80wt.%,则硅酸盐玻璃粉为20wt.%,碳化硼为70wt.%,则硅酸盐玻璃粉为30wt.%,碳化硼为60wt.%,则硅酸盐玻璃粉为40wt.%。对不同厚度的计算,具体的,本例分别计算了各个配比下,1mm、2mm、3mm、4mm和5mm厚的碳化硼陶瓷对不同能量的中子的透过率。本例具体测试了波长1埃(缩写)、2埃和3埃的中子的透过率。计算结果如表2所示。The internationally used MCNPX software is used to calculate the transmittance of boron carbide ceramic materials with different thicknesses to neutrons of different wavelengths under different ratios, and neutrons of different wavelengths are neutrons of different energies. Among them, the different proportions refer to the parts by weight of boron carbide powder. For example, if boron carbide is 90wt.%, the silicate glass powder is 10wt.%, and boron carbide is 80wt.%, then the silicate glass powder is 20wt.%. %, boron carbide is 70wt.%, then silicate glass powder is 30wt.%, boron carbide is 60wt.%, then silicate glass powder is 40wt.%. For the calculation of different thicknesses, specifically, this example calculates the transmittance of boron carbide ceramics with a thickness of 1mm, 2mm, 3mm, 4mm and 5mm to neutrons of different energies under each ratio. In this example, a wavelength of 1 Angstrom (abbreviation ), 2 Angstrom and 3 Angstrom neutron transmittance. The calculation results are shown in Table 2.

表2碳化硼陶瓷的中子透过率Table 2 Neutron transmittance of boron carbide ceramics

表2的结果显示,对于同一厚度,一定波长或能量中子的透过率随着材料配比中碳化硼的增加减小;且当碳化硼含量为60%,厚度为5mm时,对于波长中子透过率仅为4.62E-05,而波长的中子则完全会被吸收。The results in Table 2 show that for the same thickness, the transmittance of neutrons of a certain wavelength or energy decreases with the increase of boron carbide in the material ratio; and when the boron carbide content is 60% and the thickness is 5mm, for the wavelength The neutron transmittance is only 4.62E-05, while the wavelength neutrons are completely absorbed.

使用X射线衍射仪分别对三个实施例制备的碳化硼陶瓷进行检测,得到衍射图,部分结果如图1所示,图1是实施例一制备的碳化硼陶瓷的分析结果图。X射线衍射分析结果显示,碳化硼的衍射峰强度明显,由于含有30%的硅酸盐玻璃,在10°至30°出现了“馒头峰”;并且没有出现氧化硼、硼酸等的衍射峰,如图1所示,说明该方法制备的碳化硼陶瓷成功解决了碳化硼的氧化问题。The boron carbide ceramics prepared in the three examples were detected by an X-ray diffractometer, and the diffraction patterns were obtained. Part of the results are shown in Figure 1, and Figure 1 is an analysis result diagram of the boron carbide ceramics prepared in Example 1. The results of X-ray diffraction analysis show that the intensity of the diffraction peak of boron carbide is obvious, and because it contains 30% silicate glass, a "steamed bread peak" appears at 10° to 30°; and no diffraction peaks of boron oxide, boric acid, etc. appear, As shown in Figure 1, it shows that the boron carbide ceramic prepared by this method successfully solves the oxidation problem of boron carbide.

使用差示扫描量热同步热重分析仪分别对四个实施例制备的碳化硼陶瓷进行检测,得到热分析图,部分结果如图2所示,图2是实施例三制备的素坯在氮气气氛中的分析结果图。差同步热分析结果显示,在100℃以下有一个明显的放热峰,即为水分蒸发;在100℃-550℃时为有机物的挥发过程;550℃-765℃为液相烧结过程。且25℃-1000℃没有明显的质量增加,表明碳化硼没有被氧化,如图2所示。The boron carbide ceramics prepared in the four examples were detected respectively using a differential scanning calorimetry synchronous thermogravimetric analyzer, and a thermogram was obtained. Part of the results are shown in Figure 2, and Figure 2 is the biscuit prepared in Example 3 under nitrogen Diagram of analysis results in atmosphere. The results of differential simultaneous thermal analysis show that there is an obvious exothermic peak below 100°C, which is the evaporation of water; between 100°C and 550°C, it is the volatilization process of organic matter; between 550°C and 765°C, it is the liquid phase sintering process. And there is no obvious mass increase at 25°C-1000°C, indicating that boron carbide has not been oxidized, as shown in Figure 2.

使用扫描电子显微镜分别观察三个实施例制备的碳化硼陶瓷的断面的显微结构,部分结果如图3所示,图3是实施例三制备的碳化硼陶瓷断面的观察结果图。扫描电子显微镜观察结果显示,该材料为脆性断裂,熔融的硅酸盐玻璃形成网状结构并将碳化硼颗紧密粘结,如图3所示。The microstructures of the cross-sections of the boron carbide ceramics prepared in the three examples were respectively observed using a scanning electron microscope. Part of the results are shown in FIG. 3 . The scanning electron microscope observation results show that the material is brittle fracture, and the molten silicate glass forms a network structure and tightly bonds the boron carbide particles, as shown in Figure 3.

使用EDS能谱分析仪分别对四个实施例制备的碳化硼陶瓷进行检测,得到分析图谱,部分结果如图4和图5所示,图4和图5是实施例三制备的碳化硼陶瓷的分析图谱,即分别图3中谱图1和谱图2对应的分析图。选取了四个区域,每个区域重复至少5次,其中忽略的峰为本底峰。EDS图谱表明,本申请四个实施例制备的碳化硼陶瓷材料都不含氢元素,如图4和图5所示。The boron carbide ceramics prepared by the four examples were detected respectively using an EDS energy spectrum analyzer, and the analysis spectrum was obtained. Part of the results are shown in Figure 4 and Figure 5, and Figure 4 and Figure 5 are the results of the boron carbide ceramics prepared in Example 3 Analysis spectrum, that is, the analysis diagram corresponding to spectrum 1 and spectrum 2 in Fig. 3 respectively. Four regions were selected, and each region was replicated at least 5 times, where the neglected peaks were background peaks. The EDS spectrum shows that the boron carbide ceramic materials prepared in the four examples of the present application do not contain hydrogen, as shown in Fig. 4 and Fig. 5 .

以上内容是结合具体的实施方式对本申请所作的进一步详细说明,不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说,在不脱离本申请构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本申请的保护范围。The above content is a further detailed description of the present application in conjunction with specific implementation modes, and it cannot be considered that the specific implementation of the present application is limited to these descriptions. For those of ordinary skill in the technical field to which this application belongs, some simple deduction or substitutions can be made without departing from the concept of this application, which should be deemed to belong to the protection scope of this application.

Claims (10)

  1. A kind of 1. preparation method of boron carbide ceramics, it is characterised in that:Comprise the following steps,
    (1) boron carbide powder and silicate glass powder are well mixed by ball milling or ultrasonic disperse, compound is made;
    (2) binder solution is added in the compound of step (1), is granulated;
    (3) particle prepared by step (2) is poured into mould, biscuit is pressed under 5-30MPa pressure;
    (4) biscuit of step (3) is dried, is then sintered under inert atmosphere, reducing atmosphere or vacuum condition, carbonization is made Boron ceramics, the temperature of the sintering are less than 1000 DEG C.
  2. 2. preparation method according to claim 1, it is characterised in that:The boron carbide powder accounts for step (1) compound gross weight The 50-90% of amount, the silicate glass powder account for the 10-50% of step (1) compound gross weight, the use of the binder solution Measure as the 1.5-22% of step (1) compound gross weight.
  3. 3. preparation method according to claim 1, it is characterised in that:The purity of the boron carbide powder is more than 95wt.%, institute The purity for stating silicate glass powder is more than 95wt.%, also, the particle diameter of the boron carbide powder is less than 250 microns.
  4. 4. preparation method according to claim 1, it is characterised in that:Protium is not contained in the silicate glass powder.
  5. 5. preparation method according to claim 1, it is characterised in that:The binding agent is polyvinyl alcohol, phenolic resin, shallow lake At least one of powder, carbohydrate, cellulose and dextrin.
  6. 6. preparation method according to claim 1, it is characterised in that:The biscuit includes but are not limited to cylinder, length Bar shaped or long plate shape.
  7. 7. according to the preparation method described in claim any one of 1-6, it is characterised in that:The temperature of drying in the step (4) Less than 100 DEG C.
  8. 8. according to the preparation method described in claim any one of 1-6, it is characterised in that:In the step (4), the temperature of sintering For 500 DEG C -765 DEG C, sintering time 0.5h-4h.
  9. 9. boron carbide ceramics prepared by the preparation method according to claim any one of 1-8.
  10. 10. application of the boron carbide ceramics according to claim 9 in neutron-absorbing or neutron shield.
CN201710607749.6A 2017-07-24 2017-07-24 A kind of preparation method of boron carbide ceramics, boron carbide ceramics and application thereof Pending CN107500768A (en)

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