CN107479341A - A kind of developing method for reducing etching barrier layer residual - Google Patents
A kind of developing method for reducing etching barrier layer residual Download PDFInfo
- Publication number
- CN107479341A CN107479341A CN201710824329.3A CN201710824329A CN107479341A CN 107479341 A CN107479341 A CN 107479341A CN 201710824329 A CN201710824329 A CN 201710824329A CN 107479341 A CN107479341 A CN 107479341A
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- CN
- China
- Prior art keywords
- composite construction
- barrier layer
- etching barrier
- desired speed
- developing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 68
- 230000004888 barrier function Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002131 composite material Substances 0.000 claims abstract description 89
- 238000010276 construction Methods 0.000 claims abstract description 86
- 238000004140 cleaning Methods 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims abstract description 19
- 238000011161 development Methods 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a kind of developing method for reducing etching barrier layer residual, applied to preparing in two grid composite construction, following steps are specifically included：Step S1, the composite construction after exposure-processed is sent in a development chamber；Step S2, to the surface spray developing liquid of composite construction；Step S3, control composite construction is rotated with one first desired speed, developer solution is fully contacted with the etching barrier layer of composite structure surface；Step S4, control composite construction to be more than the second desired speed of the first desired speed with one to rotate；Step S5, cleaning solvent is sprayed to the surface of composite construction, and maintains the second desired speed to be stopped the rotation after rotating to a scheduled time.The beneficial effect of its technical scheme is, the etching barrier layer after dissolving and the developer solution of residual are removed from composite construction, can effectively reduce the etching barrier layer of residual, to the influence of the quality of double-grid structure ultimately formed.
Description
Technical field
The present invention relates to technical field of semiconductor preparation, more particularly to a kind of development side for reducing etching barrier layer residual
Method.
Background technology
The composite construction of double-grid structure is formed, as shown in figure 1, the composite construction includes high voltage device regions, low-voltage device
Part area and storage region, wherein the high-voltage grid oxygen layer on high tension apparatus region, and on low-voltage device region
Low pressure grid oxide layer by the combination of photoetching process and etching technics, it is necessary to be removed, its operating procedure letter is described below, and is first
An etching barrier layer is formed in high-voltage grid oxygen layer and low pressure grid oxide layer, then etching barrier layer is carried out by photoetching process
Photoetching treatment, to correspond to the active zone position of high voltage device regions on etching barrier layer, and correspond to the active of low-voltage device area
Zone position forms the window of windowing, and corresponding high-voltage grid oxygen layer and low pressure grid oxide layer are performed etching then according to window, and
In the development link of photoetching process, to after the etching barrier layer on the composite construction of exposure-processed carries out solubility value, needing
Composite construction after dissolving is cleaned twice, to remove the dissolved etch stopper of the developer solution of residual and residual
Layer, but this cleaning operation still can remain dissolved etch stopper between each active area and adjacent shallow trench
Layer, cause final graphics imaging failure, have impact on two grid quality.
The content of the invention
For carrying out existing above mentioned problem of developing to the etching barrier layer at the top of composite construction in the prior art, now provide
One kind is intended in development link, can be removed the developer solution of the etching barrier layer of the dissolving on composite construction and residual,
And then the etching resistance of residual can be avoided to influence the developing method that composite construction ultimately forms two grid quality
Concrete technical scheme is as follows：
A kind of developing method for reducing etching barrier layer residual, applied to preparing in two grid composite construction, wherein, in
The top of the composite construction covers an etching barrier layer and is exposed processing to the composite construction, specifically includes following step
Suddenly：
Step S1, the composite construction after exposure-processed is sent in a development chamber；
Step S2, to the surface spray developing liquid of the composite construction；
Step S3, control the composite construction to be rotated with one first desired speed, make the developer solution and the composite junction
The etching barrier layer on structure surface fully contacts；
Step S4, control the composite construction to be more than the second desired speed of first desired speed with one to rotate；
Step S5, to the composite construction surface spray cleaning solvent, and maintain second desired speed rotate to
Stopped the rotation after one scheduled time.
Preferably, the top of the composite construction is grid oxide layer, and the method bag of processing is exposed to the composite construction
Include：
Step A1, the surface of the grid oxide layer is coated by coating technique to form the etching barrier layer；
Step A2, processing is exposed to the etching barrier layer by exposure technology, the figure on mask plate is turned
Move on the etching barrier layer.
Preferably, first desired speed is 30rpm.
Preferably, the cleaning solvent is deionized water.
Preferably, second desired speed is 300rmp.
Preferably, the scheduled time is 25 seconds.
Preferably, a chuck is provided with the development chamber, the composite construction fixed placement passes through on the chuck
Controlling the rotating speed of the chuck makes the composite construction reach first desired speed or second desired speed.
Preferably, a first jet and second nozzle are provided with above the chuck；
The direction of the first jet is towards the composite construction, to spray the developer solution to the etching barrier layer
On；
The direction of the second nozzle towards the composite construction, to spray the cleaning solvent to the developer solution with
And cleaning removal is carried out by the etching barrier layer of the developing solution dissolution.
Above-mentioned technical proposal has the following advantages that or beneficial effect：By controlling the different rotating speed of composite construction, realizing
Developer solution is fully contacted with etching barrier layer while the etching barrier layer of exposed portion is completely dissolved, and will can also be dissolved
Etching barrier layer and the developer solution of residual afterwards removes from composite construction, can effectively reduce the etch stopper of residual
Layer, to the influence of the quality of double-grid structure ultimately formed.
Brief description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is structural representation of the background section on composite construction；
Fig. 2 is a kind of flow chart of the embodiment for the developing method for reducing etching barrier layer residual of the present invention；
Fig. 3 is in a kind of embodiment for the developing method for reducing etching barrier layer residual of the present invention, on being formed at exposure
The flow chart for the etching barrier layer managed.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Technical scheme includes a kind of developing method for reducing etching barrier layer residual.
A kind of embodiment for the developing method for reducing etching barrier layer residual, applied to preparing two grid composite construction
In, wherein, cover an etching barrier layer in the top of composite construction and processing is exposed to composite construction, as shown in Fig. 2 tool
Body comprises the following steps：
Step S1, the composite construction after exposure-processed is sent in a development chamber；
Step S2, to the surface spray developing liquid of composite construction；
Step S3, control composite construction is rotated with one first desired speed, makes the etching of developer solution and composite structure surface
Barrier layer fully contacts；
Step S4, control composite construction to be more than the second desired speed of the first desired speed with one to rotate；
Step S5, cleaning solvent is sprayed to the surface of composite construction, and maintains the second desired speed to rotate to a pre- timing
Between after stop the rotation.
For being that composite construction is placed on into development first when carrying out development treatment to composite construction in the prior art
In chamber, and make developer solution to the etching barrier layer spray developing liquid at the top of the composite construction of static placement and be exposed the quarter of processing
Erosion barrier layer portions are reacted, to dissolve the part for the etching barrier layer being exposed, then by composite construction after dissolving
Cleaning operation twice is carried out, to remove the developer solution of dissolved etching barrier layer and residual, but this processing mode is most
Or certain etching barrier layer is remained between the active area and adjacent shallow trench at the top of composite construction, influences most end form
Into double-grid structure quality.
In the present invention, composite construction be sent into development chamber after, to the etching barrier layer at the top of composite construction on spray developing
Liquid, and control the composite construction of spray developing liquid to be rotated with one first desired speed, so that developer solution uniformly covers
On etching barrier layer, developer solution is set fully to be contacted with etching barrier layer, to dissolve the part that etching barrier layer is exposed；
Then the rotating speed of composite construction is adjusted, is adjusted to the second desired speed more than the first desired speed, then
Spray cleaning solution to the surface of composite construction, make cleaning solution cleaning remove the developer solution that remains at the top of composite construction and
Dissolved etching barrier layer, after the scheduled time is maintained, stop the rotation of composite construction, to carry out follow-up etching operation.
Above-mentioned etching barrier layer can be photoresist layer.
In a kind of preferably embodiment, the top of composite construction is grid oxide layer, as shown in figure 3, entering to composite construction
The method of row exposure-processed includes：
Step A1, the surface of grid oxide layer is coated to form etching barrier layer by coating technique；
Step A2, processing is exposed to etching barrier layer by exposure technology, by the pattern transfer on mask plate extremely
On etching barrier layer.
As shown in fig. 1, above-mentioned grid oxide layer is respectively the high-voltage grid oxygen layer on high tension apparatus region, and is located at
Low pressure grid oxide layer on low-voltage device region.
In above-mentioned technical proposal, at the top of the grid oxide layer of composite construction on, carry out coating technique and form etching barrier layer
Method is technology well known to those skilled in the art, and here is omitted；
Wherein in exposure technology, in addition to the method for the rear baking operation of alignment, selection Exposure mode and progress is ability
Technology known to field technique personnel, here is omitted.
In a kind of preferably embodiment, the first desired speed is 30rpm.
In a kind of preferably embodiment, cleaning solvent is deionized water.
In a kind of preferably embodiment, the second desired speed is 300rmp.
In a kind of preferably embodiment, the scheduled time is 25 seconds.
Illustrated below with a kind of specific embodiment, in the prior art, development treatment is being carried out to composite construction
When, it is that composite construction is placed in development chamber first, and sprayed to the etching barrier layer at the top of the composite construction of static placement
Developer solution makes developer solution be reacted with being exposed the etch stopper layer segment of processing, to dissolve the etching barrier layer being exposed
Part, then by carrying out cleaning operation twice to composite construction after dissolving, cleaning operation each time is as follows, controls wafer
Rotating speed is 600rpm, sprays cleaning solvent to the surface of composite construction, the time of each cleaning operation maintains 15 seconds, this
Processing mode most or at the top of composite construction is to be remained necessarily between the active area of composite construction and adjacent shallow trench
Etching barrier layer, influence the quality of double-grid structure ultimately formed.
In the present invention, composite construction be sent into development chamber after, to the etching barrier layer at the top of composite construction on spray developing
Liquid, and control the composite construction of spray developing liquid to be rotated with the rotating speed of a 30rmp, so that developer solution is uniformly covered on
On etching barrier layer, developer solution is set fully to be contacted with etching barrier layer, to dissolve the part that etching barrier layer is exposed.
Then the rotating speed for adjusting composite construction is 300rmp, then sprays cleaning solution to the surface of composite construction, is made clear
Dilution cleaning removes the developer solution remained at the top of composite construction and dissolved etching barrier layer, after maintaining 25 seconds,
Stop the rotation of composite construction, to carry out follow-up etching operation.
In a kind of preferably embodiment, be provided with a chuck in the chamber that develops, composite construction fixed placement on chuck,
By controlling the rotating speed of chuck composite construction is reached the first desired speed or the second desired speed.
In a kind of preferably embodiment, a first jet and second nozzle are provided with above chuck；
The direction of first jet is towards composite construction, on spray developing liquid to etching barrier layer；
The direction of second nozzle is towards composite construction, to spray cleaning solvent to developer solution and be dissolved by the developing
Etching barrier layer carries out cleaning removal.
In above-mentioned technical proposal, first jet and second nozzle may be provided with corresponding transmission pipeline, and it corresponds to defeated respectively
Go out developer solution and cleaning solvent, preferable cleaning solvent is deionized water.
Preferred embodiments of the present invention are the foregoing is only, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.
Claims (8)
1. a kind of developing method for reducing etching barrier layer residual, applied to preparing in two grid composite construction, its feature exists
In being covered in the top of the composite construction and an etching barrier layer and be exposed processing to the composite construction, specifically included
Following steps：
Step S1, the composite construction after exposure-processed is sent in a development chamber；
Step S2, to the surface spray developing liquid of the composite construction；
Step S3, control the composite construction to be rotated with one first desired speed, make the developer solution and the composite construction table
The etching barrier layer in face fully contacts；
Step S4, control the composite construction to be more than the second desired speed of first desired speed with one to rotate；
Step S5, cleaning solvent is sprayed to the surface of the composite construction, and maintains second desired speed to rotate to one pre-
Stopped the rotation after fixing time.
2. developing method according to claim 1, it is characterised in that the top of the composite construction is grid oxide layer, to institute
Stating composite construction and being exposed the method for processing includes：
Step A1, the surface of the grid oxide layer is coated by coating technique to form the etching barrier layer；
Step A2, processing is exposed to the etching barrier layer by exposure technology, by the pattern transfer on mask plate extremely
On the etching barrier layer.
3. developing method according to claim 1, it is characterised in that first desired speed is 30rpm.
4. developing method according to claim 1, it is characterised in that the cleaning solvent is deionized water.
5. developing method according to claim 1, it is characterised in that second desired speed is 300rmp.
6. developing method according to claim 1, it is characterised in that the scheduled time is 25 seconds.
7. developing method according to claim 1, it is characterised in that a chuck is provided with the development chamber, it is described multiple
Structure fixed placement is closed on the chuck, it is pre- by controlling the rotating speed of the chuck composite construction is reached described first
Determine rotating speed or second desired speed.
8. developing method according to claim 1, it is characterised in that be provided with above the chuck first jet with
And second nozzle；
The direction of the first jet is towards the composite construction, to spray the developer solution to the etching barrier layer；
The direction of the second nozzle towards the composite construction, to spray the cleaning solvent to the developer solution and by
The etching barrier layer of the developing solution dissolution carries out cleaning removal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824329.3A CN107479341A (en) | 2017-09-13 | 2017-09-13 | A kind of developing method for reducing etching barrier layer residual |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710824329.3A CN107479341A (en) | 2017-09-13 | 2017-09-13 | A kind of developing method for reducing etching barrier layer residual |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107479341A true CN107479341A (en) | 2017-12-15 |
Family
ID=60585386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710824329.3A Pending CN107479341A (en) | 2017-09-13 | 2017-09-13 | A kind of developing method for reducing etching barrier layer residual |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784009A (en) * | 2022-06-20 | 2022-07-22 | 广州粤芯半导体技术有限公司 | Preparation method of embedded flash memory |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10232498A (en) * | 1997-02-19 | 1998-09-02 | Nec Kyushu Ltd | Developing device |
| TW200512798A (en) * | 2003-09-23 | 2005-04-01 | Mosel Vitelic Inc | Method for developing |
| CN101158820A (en) * | 2006-10-04 | 2008-04-09 | 株式会社迅动 | Method and apparatus for rinsing a substrate during lithographic development processing |
| CN101393401A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Developing method of photolithographic process |
| EP2112687A2 (en) * | 2008-04-22 | 2009-10-28 | Imec | Method for fabricating a dual workfunction semiconductor device and the device made thereof |
| CN102298275A (en) * | 2010-06-23 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | Developing method |
| CN102385262A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Development method of photoetching process |
| CN102479712A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Method for manufacturing double-gate oxide semiconductor device |
| CN102650835A (en) * | 2011-02-24 | 2012-08-29 | 东京毅力科创株式会社 | Developing method and apparatus using organic-solvent containing developer |
| CN103197514A (en) * | 2012-01-09 | 2013-07-10 | 上海微电子装备有限公司 | Developing method capable of effectively reducing defect of pore development |
| CN103631100A (en) * | 2012-08-29 | 2014-03-12 | 无锡华润上华半导体有限公司 | Wafer development apparatus and method |
-
2017
- 2017-09-13 CN CN201710824329.3A patent/CN107479341A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10232498A (en) * | 1997-02-19 | 1998-09-02 | Nec Kyushu Ltd | Developing device |
| TW200512798A (en) * | 2003-09-23 | 2005-04-01 | Mosel Vitelic Inc | Method for developing |
| CN101158820A (en) * | 2006-10-04 | 2008-04-09 | 株式会社迅动 | Method and apparatus for rinsing a substrate during lithographic development processing |
| CN101393401A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Developing method of photolithographic process |
| EP2112687A2 (en) * | 2008-04-22 | 2009-10-28 | Imec | Method for fabricating a dual workfunction semiconductor device and the device made thereof |
| CN102298275A (en) * | 2010-06-23 | 2011-12-28 | 中芯国际集成电路制造(上海)有限公司 | Developing method |
| CN102385262A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Development method of photoetching process |
| CN102479712A (en) * | 2010-11-29 | 2012-05-30 | 无锡华润上华半导体有限公司 | Method for manufacturing double-gate oxide semiconductor device |
| CN102650835A (en) * | 2011-02-24 | 2012-08-29 | 东京毅力科创株式会社 | Developing method and apparatus using organic-solvent containing developer |
| CN103197514A (en) * | 2012-01-09 | 2013-07-10 | 上海微电子装备有限公司 | Developing method capable of effectively reducing defect of pore development |
| CN103631100A (en) * | 2012-08-29 | 2014-03-12 | 无锡华润上华半导体有限公司 | Wafer development apparatus and method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784009A (en) * | 2022-06-20 | 2022-07-22 | 广州粤芯半导体技术有限公司 | Preparation method of embedded flash memory |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171215 |
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