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CN107453743A - A kind of application method of wireless communication field multiplexer - Google Patents

A kind of application method of wireless communication field multiplexer Download PDF

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Publication number
CN107453743A
CN107453743A CN201710663727.1A CN201710663727A CN107453743A CN 107453743 A CN107453743 A CN 107453743A CN 201710663727 A CN201710663727 A CN 201710663727A CN 107453743 A CN107453743 A CN 107453743A
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CN
China
Prior art keywords
semiconductor
oxide
metal
multiplexer
drain electrode
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CN201710663727.1A
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Chinese (zh)
Inventor
李海莲
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Individual
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Individual
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Priority to CN201710663727.1A priority Critical patent/CN107453743A/en
Publication of CN107453743A publication Critical patent/CN107453743A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002Switching arrangements with several input- or output terminals

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Abstract

The invention discloses a kind of application method for wireless communication field multiplexer, wherein multiplexer includes:Supply voltage, output resistance R1 and R2, metal-oxide-semiconductor T1 T9, the conducting of metal-oxide-semiconductor is controlled by being connected to the control signal of metal-oxide-semiconductor, so as to control the output of multiplexer.The defects of multiplexer application method in the present invention improves traditional multiplexer, noise is reduced while operating efficiency is improved.

Description

A kind of application method of wireless communication field multiplexer
Technical field
The present invention relates to wireless communication technology field, and in particular to a kind of multiplexer.
Background technology
The background of related of the present invention is illustrated below, but these explanations might not form the existing of the present invention Technology.
In the field of wireless communication, multiplexer is a kind of common device.But there is effect in traditional multiplexer Rate is low, the big problem of noise, have impact on the operating efficiency of whole system.
The content of the invention
The purpose of the present invention is exactly in order to solve the above problems, so as to propose a kind of multichannel for wireless communication field Multiplexer, with an improved the defects of traditional multiplexer, the structure of the multiplexer includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end leakage with metal-oxide-semiconductor T5 and T7 respectively Extremely it is connected;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and It is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T9 Source ground;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8 Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one Hold power supply Bias;
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Compared with prior art, the beneficial effects of the present invention are:The operating efficiency of multiplexer is improved, and is reduced Noise.
Brief description of the drawings
By that will become more and the specific embodiment part provided, the features and advantages of the present invention referring to the drawings It is readily appreciated that, in the accompanying drawings:
Fig. 1 is the structural representation of multiplexer proposed by the present invention;
Embodiment
The illustrative embodiments of the present invention are described in detail with reference to the accompanying drawings.Illustrative embodiments are retouched State merely for the sake of demonstration purpose, and be definitely not to the present invention and its application or the limitation of usage.
The present invention proposes a kind of multiplexer, and the multiplexer includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end leakage with metal-oxide-semiconductor T5 and T7 respectively Extremely it is connected;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and It is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T9 Source ground;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8 Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one Hold power supply Bias;
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Optionally, above-mentioned metal-oxide-semiconductor can be NMOS tube or PMOS.
The invention also provides a kind of application method of multiplexer, the multiplexer includes:One supply voltage, point Lian Jie not output resistance R1 and R2;Wherein drain electrode of the R1 other end respectively with metal-oxide-semiconductor T5 and T7 is connected;R2 other end difference Drain electrode with metal-oxide-semiconductor T6 and T8 is connected;Drain electrode of metal-oxide-semiconductor T5 and the T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 is connected, metal-oxide-semiconductor T6 It is connected with drain electrode of the T8 source electrode respectively with metal-oxide-semiconductor T2 and T4;T1 is connected with T2 source electrode, and is commonly connected to metal-oxide-semiconductor T9's Drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The source ground of the T9;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8 Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one Hold power supply Bias;
It is high level to set control signal ctrl1, and control signal ctrl2 is low level so that multiplexer output Signal be (p1, n1);
It is low level to set control signal ctrl1, and control signal ctrl2 is high level so that multiplexer output Signal be (p2, n2).
Although with reference to illustrative embodiments, invention has been described, but it is to be understood that the present invention does not limit to The embodiment that Yu Wenzhong is described in detail and shown, in the case of without departing from claims limited range, this Art personnel can make various changes to the illustrative embodiments.

Claims (1)

1. a kind of application method of wireless communication field multiplexer, this method includes a multiplexer, the multiplexing Device includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end drain electrode phase with metal-oxide-semiconductor T5 and T7 respectively Even;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 Drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and jointly It is connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The leakage of the T9 Pole is grounded;Grid the incoming control signal ctrl1, the metal-oxide-semiconductor T7 and T8 of the metal-oxide-semiconductor T5 and T6 grid Access Control letter Number ctrl2;Described T1, T2, T3, T4 grid connect described input signal p1, n1, p2, n2 respectively;The grid of the T9 meets institute State bigoted power supply Bias;
It is characterized in that:It is high level to set the control signal ctrl1, and the control signal ctrl2 is low level so that more The signal of path multiplexer output end is (p1, n1);
It is low level to set the control signal ctrl1, and the control signal ctrl2 is high level so that multiplexer is defeated The signal for going out end is (p2, n2).
CN201710663727.1A 2017-05-04 2017-05-04 A kind of application method of wireless communication field multiplexer Pending CN107453743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710663727.1A CN107453743A (en) 2017-05-04 2017-05-04 A kind of application method of wireless communication field multiplexer

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CN201710305852.5A CN107124171A (en) 2017-05-04 2017-05-04 A kind of multiplexer for wireless communication field
CN201710663727.1A CN107453743A (en) 2017-05-04 2017-05-04 A kind of application method of wireless communication field multiplexer

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310509B1 (en) * 1998-12-08 2001-10-30 Triquint Semiconductor, Inc. Differential multiplexer with high bandwidth and reduced crosstalk
US20110254595A1 (en) * 2010-04-20 2011-10-20 Mstar Semiconductor, Inc. Flip-Flop and Frequency Dividing Circuit with Flip-Flop
CN103080768A (en) * 2010-09-09 2013-05-01 德克萨斯仪器股份有限公司 Terahertz phased array system
CN104052440A (en) * 2013-03-13 2014-09-17 美国亚德诺半导体公司 Apparatus and methods for signal loss detection

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313688A1 (en) * 2011-06-09 2012-12-13 Shukh Alexander M Nonvolatile Multiplexer Circuit
CN205883169U (en) * 2016-08-05 2017-01-11 成都维星科技有限公司 Low noise amplifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310509B1 (en) * 1998-12-08 2001-10-30 Triquint Semiconductor, Inc. Differential multiplexer with high bandwidth and reduced crosstalk
US20110254595A1 (en) * 2010-04-20 2011-10-20 Mstar Semiconductor, Inc. Flip-Flop and Frequency Dividing Circuit with Flip-Flop
CN103080768A (en) * 2010-09-09 2013-05-01 德克萨斯仪器股份有限公司 Terahertz phased array system
CN104052440A (en) * 2013-03-13 2014-09-17 美国亚德诺半导体公司 Apparatus and methods for signal loss detection

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Application publication date: 20171208