CN107453743A - A kind of application method of wireless communication field multiplexer - Google Patents
A kind of application method of wireless communication field multiplexer Download PDFInfo
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- CN107453743A CN107453743A CN201710663727.1A CN201710663727A CN107453743A CN 107453743 A CN107453743 A CN 107453743A CN 201710663727 A CN201710663727 A CN 201710663727A CN 107453743 A CN107453743 A CN 107453743A
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- semiconductor
- oxide
- metal
- multiplexer
- drain electrode
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- 238000004891 communication Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/002—Switching arrangements with several input- or output terminals
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Abstract
The invention discloses a kind of application method for wireless communication field multiplexer, wherein multiplexer includes:Supply voltage, output resistance R1 and R2, metal-oxide-semiconductor T1 T9, the conducting of metal-oxide-semiconductor is controlled by being connected to the control signal of metal-oxide-semiconductor, so as to control the output of multiplexer.The defects of multiplexer application method in the present invention improves traditional multiplexer, noise is reduced while operating efficiency is improved.
Description
Technical field
The present invention relates to wireless communication technology field, and in particular to a kind of multiplexer.
Background technology
The background of related of the present invention is illustrated below, but these explanations might not form the existing of the present invention
Technology.
In the field of wireless communication, multiplexer is a kind of common device.But there is effect in traditional multiplexer
Rate is low, the big problem of noise, have impact on the operating efficiency of whole system.
The content of the invention
The purpose of the present invention is exactly in order to solve the above problems, so as to propose a kind of multichannel for wireless communication field
Multiplexer, with an improved the defects of traditional multiplexer, the structure of the multiplexer includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end leakage with metal-oxide-semiconductor T5 and T7 respectively
Extremely it is connected;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and
T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and
It is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T9
Source ground;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one
Hold power supply Bias;
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is
During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Compared with prior art, the beneficial effects of the present invention are:The operating efficiency of multiplexer is improved, and is reduced
Noise.
Brief description of the drawings
By that will become more and the specific embodiment part provided, the features and advantages of the present invention referring to the drawings
It is readily appreciated that, in the accompanying drawings:
Fig. 1 is the structural representation of multiplexer proposed by the present invention;
Embodiment
The illustrative embodiments of the present invention are described in detail with reference to the accompanying drawings.Illustrative embodiments are retouched
State merely for the sake of demonstration purpose, and be definitely not to the present invention and its application or the limitation of usage.
The present invention proposes a kind of multiplexer, and the multiplexer includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end leakage with metal-oxide-semiconductor T5 and T7 respectively
Extremely it is connected;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and
T3 drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and
It is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The T9
Source ground;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one
Hold power supply Bias;
When the control signal is high level, the metal-oxide-semiconductor conducting of the control signal connection, when the control signal is
During low level, the metal-oxide-semiconductor of the control signal connection is not turned on.
Optionally, above-mentioned metal-oxide-semiconductor can be NMOS tube or PMOS.
The invention also provides a kind of application method of multiplexer, the multiplexer includes:One supply voltage, point
Lian Jie not output resistance R1 and R2;Wherein drain electrode of the R1 other end respectively with metal-oxide-semiconductor T5 and T7 is connected;R2 other end difference
Drain electrode with metal-oxide-semiconductor T6 and T8 is connected;Drain electrode of metal-oxide-semiconductor T5 and the T7 source electrode respectively with metal-oxide-semiconductor T1 and T3 is connected, metal-oxide-semiconductor T6
It is connected with drain electrode of the T8 source electrode respectively with metal-oxide-semiconductor T2 and T4;T1 is connected with T2 source electrode, and is commonly connected to metal-oxide-semiconductor T9's
Drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The source ground of the T9;
The grid incoming control signal ctrl1 of the metal-oxide-semiconductor T5 and T6, the grid Access Control of the metal-oxide-semiconductor T7 and T8
Signal ctrl2;Described T1, T2, T3, T4 grid connect input signal p1, n1, p2, n2 respectively;It is inclined that the grid of the T9 connects one
Hold power supply Bias;
It is high level to set control signal ctrl1, and control signal ctrl2 is low level so that multiplexer output
Signal be (p1, n1);
It is low level to set control signal ctrl1, and control signal ctrl2 is high level so that multiplexer output
Signal be (p2, n2).
Although with reference to illustrative embodiments, invention has been described, but it is to be understood that the present invention does not limit to
The embodiment that Yu Wenzhong is described in detail and shown, in the case of without departing from claims limited range, this
Art personnel can make various changes to the illustrative embodiments.
Claims (1)
1. a kind of application method of wireless communication field multiplexer, this method includes a multiplexer, the multiplexing
Device includes:
One supply voltage, output resistance R1 and R2 are connected respectively;The wherein R1 other end drain electrode phase with metal-oxide-semiconductor T5 and T7 respectively
Even;Drain electrode of the R2 other end respectively with metal-oxide-semiconductor T6 and T8 is connected;Metal-oxide-semiconductor T5 and T7 source electrode respectively with metal-oxide-semiconductor T1 and T3
Drain electrode is connected, and the drain electrode of metal-oxide-semiconductor T6 and T8 source electrode respectively with metal-oxide-semiconductor T2 and T4 is connected;T1 is connected with T2 source electrode, and jointly
It is connected to metal-oxide-semiconductor T9 drain electrode;The T3 is connected with T4 source electrode, and is commonly connected to metal-oxide-semiconductor T9 drain electrode;The leakage of the T9
Pole is grounded;Grid the incoming control signal ctrl1, the metal-oxide-semiconductor T7 and T8 of the metal-oxide-semiconductor T5 and T6 grid Access Control letter
Number ctrl2;Described T1, T2, T3, T4 grid connect described input signal p1, n1, p2, n2 respectively;The grid of the T9 meets institute
State bigoted power supply Bias;
It is characterized in that:It is high level to set the control signal ctrl1, and the control signal ctrl2 is low level so that more
The signal of path multiplexer output end is (p1, n1);
It is low level to set the control signal ctrl1, and the control signal ctrl2 is high level so that multiplexer is defeated
The signal for going out end is (p2, n2).
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CN201710663727.1A CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
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CN201710305852.5A CN107124171A (en) | 2017-05-04 | 2017-05-04 | A kind of multiplexer for wireless communication field |
CN201710663727.1A CN107453743A (en) | 2017-05-04 | 2017-05-04 | A kind of application method of wireless communication field multiplexer |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310509B1 (en) * | 1998-12-08 | 2001-10-30 | Triquint Semiconductor, Inc. | Differential multiplexer with high bandwidth and reduced crosstalk |
US20110254595A1 (en) * | 2010-04-20 | 2011-10-20 | Mstar Semiconductor, Inc. | Flip-Flop and Frequency Dividing Circuit with Flip-Flop |
CN103080768A (en) * | 2010-09-09 | 2013-05-01 | 德克萨斯仪器股份有限公司 | Terahertz phased array system |
CN104052440A (en) * | 2013-03-13 | 2014-09-17 | 美国亚德诺半导体公司 | Apparatus and methods for signal loss detection |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120313688A1 (en) * | 2011-06-09 | 2012-12-13 | Shukh Alexander M | Nonvolatile Multiplexer Circuit |
CN205883169U (en) * | 2016-08-05 | 2017-01-11 | 成都维星科技有限公司 | Low noise amplifier |
-
2017
- 2017-05-04 CN CN201710663727.1A patent/CN107453743A/en active Pending
- 2017-05-04 CN CN201710305852.5A patent/CN107124171A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310509B1 (en) * | 1998-12-08 | 2001-10-30 | Triquint Semiconductor, Inc. | Differential multiplexer with high bandwidth and reduced crosstalk |
US20110254595A1 (en) * | 2010-04-20 | 2011-10-20 | Mstar Semiconductor, Inc. | Flip-Flop and Frequency Dividing Circuit with Flip-Flop |
CN103080768A (en) * | 2010-09-09 | 2013-05-01 | 德克萨斯仪器股份有限公司 | Terahertz phased array system |
CN104052440A (en) * | 2013-03-13 | 2014-09-17 | 美国亚德诺半导体公司 | Apparatus and methods for signal loss detection |
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Application publication date: 20171208 |