CN107452199A - A kind of I V circuits of infrared receiving module - Google Patents
A kind of I V circuits of infrared receiving module Download PDFInfo
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- CN107452199A CN107452199A CN201710859215.2A CN201710859215A CN107452199A CN 107452199 A CN107452199 A CN 107452199A CN 201710859215 A CN201710859215 A CN 201710859215A CN 107452199 A CN107452199 A CN 107452199A
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- semiconductor
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- operational amplifier
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- G—PHYSICS
- G08—SIGNALLING
- G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
- G08C23/00—Non-electrical signal transmission systems, e.g. optical systems
- G08C23/04—Non-electrical signal transmission systems, e.g. optical systems using light waves, e.g. infrared
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- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
Abstract
The invention belongs to field of analog integrated circuit, the I V circuits of specially a kind of infrared receiving module, it can effectively reduce the PSRR of circuit in circuit front-end（PSRR）, improve the performance of circuit, it includes operational amplifier, the inverting input of operational amplifier is connected with output end, the output end of operational amplifier is sequentially connected with adjustable resistance R1 and photodiode, adjustable resistance R1 both ends are respectively voltage signal output end, it is characterized in that, it also includes metal-oxide-semiconductor PM0 and metal-oxide-semiconductor PM1, metal-oxide-semiconductor PM0 connects current source one end after being connected with metal-oxide-semiconductor PM1 source, bulk ends connect resistance R2 one end after being connected, grid end is grounded after being connected, the current source other end is all connected with power vd D with the resistance other end, metal-oxide-semiconductor PM1 drain terminal ground connection, the normal phase input end of metal-oxide-semiconductor PM0 drain terminal concatenation operation amplifier and electric capacity C0 one end, the electric capacity C0 other ends are grounded.
Description
Technical field
The invention belongs to field of analog integrated circuit, the I-V circuits of specially a kind of infrared receiving module.
Background technology
The function of present electronic product is more and more, and infrared remote control also just becomes the One function in many products.
The signal frequency of Infrared Remote-Control Sending is 38KHz infrared light, and I-V circuits are the whose forwardmost end portions of infrared receiving module, are
Photodiode is received the circuit that caused current signal after infrared light is converted into voltage signal, as shown in Figure 1.I-V circuits
Performance can directly affect the performance of infrared receiving module.
Traditional I-V circuits cause becoming increasingly complex for system power supply change as shown in Fig. 2 the peripheral circuit of product becomes more,
The ripple of different frequency component is also more and more on power supply, and these ripples can influence the output waveform of infrared receiving module, cause
Output has clutter.
The content of the invention
The problem of for upper circuit performance difference, the invention provides a kind of I-V circuits of infrared receiving module, it is in circuit
Front end can effectively reduce the PSRR of circuit（PSRR）, improve the performance of circuit.
Its technical scheme is such：A kind of I-V circuits of infrared receiving module, it includes operational amplifier, the fortune
The inverting input for calculating amplifier is connected with output end, and the output end of the operational amplifier is sequentially connected with adjustable resistance R1 and light
Electric diode, the adjustable resistance R1 both ends are respectively voltage signal output end, it is characterised in that its also include metal-oxide-semiconductor PM0 and
Metal-oxide-semiconductor PM1, the metal-oxide-semiconductor PM0 connect current source one end, bulk ends after being connected with the source of the metal-oxide-semiconductor PM1 and connected after being connected
Connecting resistance R2 one end, grid end are grounded after being connected, and the current source other end is all connected with power vd D, institute with the resistance other end
Metal-oxide-semiconductor PM1 drain terminal ground connection is stated, the drain terminal of the metal-oxide-semiconductor PM0 connects the normal phase input end and electric capacity C0 of the operational amplifier
One end, the electric capacity C0 other ends ground connection.
It is further characterized by, and the metal-oxide-semiconductor PM0 and the metal-oxide-semiconductor PM1 are PMOS.
After circuit using the present invention, metal-oxide-semiconductor PM0 and metal-oxide-semiconductor PM1 bulk ends are connected on VDD by resistance R2, and electric
Hinder the bulk of R2 and metal-oxide-semiconductor PM0, metal-oxide-semiconductor PM1 parasitic capacitance one low pass filter of formation, metal-oxide-semiconductor PM0 and metal-oxide-semiconductor PM1
The voltage at end is more stable, can effectively improve the PSRR of circuit, improves the performance of circuit.
Brief description of the drawings
Fig. 1 is infrared receiver schematic diagram；
Fig. 2 is traditional I-V circuit theory diagrams；
Fig. 3 is the I-V circuit theory diagrams of the present invention；
Fig. 4 is the PSRR comparative result figures of traditional circuit and circuit of the present invention.
Embodiment
As shown in Figure 3, the I-V circuits of a kind of infrared receiving module, it includes operational amplifier 1, PMOS PM0 and PMOS
Pipe PM1, the inverting input of operational amplifier 1 are connected with output end, and the output end of operational amplifier 1 is sequentially connected with adjustable resistance
R1 and photodiode 2, the photodiode of this side are external, the photodiode of the leftmost side in as Fig. 1, adjustable electric
Resistance R1 both ends are respectively voltage signal output end VOUTN and VOUTP, preamplifier of the output voltage signal to rear end, PMOS
Resistance R2 one end, grid end phase are connected after pipe PM0 connects the one end of current source 3 after being connected with PMOS PM1 source, bulk ends are connected
It is grounded after even, the other end of current source 3 is all connected with power vd D, PMOS PM1 drain terminal ground connection, PMOS PM0 with the resistance other end
Drain terminal concatenation operation amplifier normal phase input end and electric capacity C0 one end, the electric capacity C0 other ends ground connection.
Operation principle is as described below：Electric current flows through PMOS PM1, produces the Vds voltages of one, is carried for operational amplifier 1
For common-mode voltage, but this Vds voltage can change with power supply ripple.PMOS PM0 and PMOS PM1 bulk ends pass through
Resistance R2 is connected on VDD, and resistance R2 and PMOS PM0, PMOS PM1 parasitic capacitance form a low pass filter,
The voltage at PMOS PM0 and PMOS PM1 bulk ends is more stable.
PMOS PM0 work linear zones, resistance value is very big, and one is formed with electric capacity C0 and PMOS PM0 parasitic capacitance
The low pass filter of smaller bandwidth, it can effectively filter out PMOS PM1 Vds voltage 38KHz above high-frequency noises.Such I-
V output signals can be obviously improved at 38KHz, improve the performance of circuit.PSRR results such as Fig. 4 institutes of two kinds of structural circuits
Show, circuit structure of the invention is simple, and application effect is obvious.
Claims (2)
1. a kind of I-V circuits of infrared receiving module, it includes operational amplifier, the inverting input of the operational amplifier with
Output end is connected, and the output end of the operational amplifier is sequentially connected with adjustable resistance R1 and photodiode, the adjustable resistance
R1 both ends are respectively voltage signal output end, it is characterised in that it also includes metal-oxide-semiconductor PM0 and metal-oxide-semiconductor PM1, the metal-oxide-semiconductor PM0
Connection current source one end, bulk ends connect resistance R2 one end after being connected after being connected with the source of the metal-oxide-semiconductor PM1, grid end is connected
After be grounded, the drain terminal that the current source other end and the resistance other end are all connected with power vd D, the metal-oxide-semiconductor PM1 is grounded,
The drain terminal of the metal-oxide-semiconductor PM0 connects normal phase input end and electric capacity C0 one end of the operational amplifier, the electric capacity C0 other ends
Ground connection.
A kind of 2. I-V circuits of infrared receiving module according to claim 1, it is characterised in that the metal-oxide-semiconductor PM0 and
The metal-oxide-semiconductor PM1 is PMOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710859215.2A CN107452199B (en) | 2017-09-21 | 2017-09-21 | I-V circuit of infrared receiving module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710859215.2A CN107452199B (en) | 2017-09-21 | 2017-09-21 | I-V circuit of infrared receiving module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107452199A true CN107452199A (en) | 2017-12-08 |
| CN107452199B CN107452199B (en) | 2024-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710859215.2A Active CN107452199B (en) | 2017-09-21 | 2017-09-21 | I-V circuit of infrared receiving module |
Country Status (1)
| Country | Link |
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| CN (1) | CN107452199B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108181494A (en) * | 2017-12-29 | 2018-06-19 | 浙江航都电子科技有限公司 | A kind of integrated infrared voltage P/T module |
| CN110444004A (en) * | 2019-08-20 | 2019-11-12 | 无锡思泰迪半导体有限公司 | A kind of infrared remote control receives the output signal control system and control method of chip |
| CN111260854A (en) * | 2020-03-10 | 2020-06-09 | 深圳来电科技有限公司 | Circuit and method for improving infrared identification sensitivity and mobile power supply leasing equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323072A (en) * | 1991-09-24 | 1994-06-21 | Siemens Aktiengesellschaft | Interface circuit which suppresses interference |
| CN201060527Y (en) * | 2007-04-04 | 2008-05-14 | 武建钢 | Integrated bus system active infrared intrusion detector |
| CN102162828A (en) * | 2010-12-28 | 2011-08-24 | 哈尔滨工业大学 | Device and method for qualitatively detecting PCB (printed circuit board) board electromagnetic interference radiation performance |
| CN208766831U (en) * | 2017-09-21 | 2019-04-19 | 无锡思泰迪半导体有限公司 | The I-V circuit of infrared receiving module |
-
2017
- 2017-09-21 CN CN201710859215.2A patent/CN107452199B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323072A (en) * | 1991-09-24 | 1994-06-21 | Siemens Aktiengesellschaft | Interface circuit which suppresses interference |
| CN201060527Y (en) * | 2007-04-04 | 2008-05-14 | 武建钢 | Integrated bus system active infrared intrusion detector |
| CN102162828A (en) * | 2010-12-28 | 2011-08-24 | 哈尔滨工业大学 | Device and method for qualitatively detecting PCB (printed circuit board) board electromagnetic interference radiation performance |
| CN208766831U (en) * | 2017-09-21 | 2019-04-19 | 无锡思泰迪半导体有限公司 | The I-V circuit of infrared receiving module |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108181494A (en) * | 2017-12-29 | 2018-06-19 | 浙江航都电子科技有限公司 | A kind of integrated infrared voltage P/T module |
| CN110444004A (en) * | 2019-08-20 | 2019-11-12 | 无锡思泰迪半导体有限公司 | A kind of infrared remote control receives the output signal control system and control method of chip |
| CN110444004B (en) * | 2019-08-20 | 2024-05-03 | 杭州思泰微电子有限公司 | Output signal control system and control method of infrared remote control receiving chip |
| CN111260854A (en) * | 2020-03-10 | 2020-06-09 | 深圳来电科技有限公司 | Circuit and method for improving infrared identification sensitivity and mobile power supply leasing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107452199B (en) | 2024-02-13 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20221222 Address after: No. 295, Building 17, No. 2723, Fuchunwan Avenue, Chunjiang Street, Fuyang District, Hangzhou, Zhejiang, 310000 Applicant after: Hangzhou Sitai Microelectronics Co.,Ltd. Address before: 214028 No. 16, Changjiang Road, Xinwu District, Wuxi City, Jiangsu Province Applicant before: STEADICHIPS Inc. |
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