CN107425836A - A kind of mosfet driver - Google Patents
A kind of mosfet driver Download PDFInfo
- Publication number
- CN107425836A CN107425836A CN201710701296.3A CN201710701296A CN107425836A CN 107425836 A CN107425836 A CN 107425836A CN 201710701296 A CN201710701296 A CN 201710701296A CN 107425836 A CN107425836 A CN 107425836A
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- CN
- China
- Prior art keywords
- operational amplifier
- semiconductor
- oxide
- poles
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses a kind of mosfet driver, including operational amplifier U1 and operational amplifier U2, the operational amplifier U1 in-phase ends connect 1.5V power supplys, operational amplifier U1 end of oppisite phase distinguishes connecting signal source V3 and operational amplifier U2 in-phase ends, operational amplifier U2 end of oppisite phase connects 1.5V power supplys, operational amplifier U1 output ends connection metal-oxide-semiconductor M1 G poles, metal-oxide-semiconductor M1 D poles connection 12V power supplys, metal-oxide-semiconductor M1 S poles connection metal-oxide-semiconductor M2 D poles, metal-oxide-semiconductor M2 S poles ground connection, metal-oxide-semiconductor M2 G poles concatenation operation amplifier U2 output end.The operational amplifier U1 and operational amplifier U2 use LM358.Mosfet driver of the present invention forms comparator drives MOSFET using two operational amplifiers, and cost is low, and driving effect is good.
Description
Technical field
The present invention relates to a kind of driver, specifically a kind of mosfet driver.
Background technology
Although MOSFET is voltage-type device, grid voltage reaches certain value, and MOSFET cans turn on, but due to
The physical characteristic of device in itself, parasitic capacitance presence is had between MOSFET grid and source electrode, so when MOSFET is used as height
During fast on-off circuit（As Switching Power Supply and motor drive）, grid just needs very big electric current just to make the conductings of MOSFET high speeds
And shut-off.In this case just need to use MOSFET drivings.
The content of the invention
It is an object of the invention to provide a kind of mosfet driver, to solve the problems mentioned in the above background technology.
To achieve the above object, the present invention provides following technical scheme：
A kind of mosfet driver, including operational amplifier U1 and operational amplifier U2, the operational amplifier U1 in-phase ends connect
Connect 1.5V power supplys, operational amplifier U1 end of oppisite phase difference connecting signal source V3 and operational amplifier U2 in-phase ends, operational amplifier
U2 end of oppisite phase connects 1.5V power supplys, operational amplifier U1 output ends connection metal-oxide-semiconductor M1 G poles, metal-oxide-semiconductor M1 D poles connection 12V electricity
Source, metal-oxide-semiconductor M1 S poles connection metal-oxide-semiconductor M2 D poles, metal-oxide-semiconductor M2 S poles ground connection, metal-oxide-semiconductor M2 G poles concatenation operation amplifier U2
Output end.
As further scheme of the invention：The operational amplifier U1 and operational amplifier U2 use LM358.
Compared with prior art, the beneficial effects of the invention are as follows：Mosfet driver of the present invention uses two operation amplifiers
Device forms comparator drives MOSFET, and cost is low, and driving effect is good.
Brief description of the drawings
Fig. 1 is the circuit diagram of mosfet driver.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Referring to Fig. 1, in the embodiment of the present invention, a kind of mosfet driver, including operational amplifier U1 and operation amplifier
Device U2, the operational amplifier U1 in-phase ends connect 1.5V power supplys, operational amplifier U1 end of oppisite phase difference connecting signal source V3 and
Operational amplifier U2 in-phase ends, operational amplifier U2 end of oppisite phase connection 1.5V power supplys, operational amplifier U1 output ends connection metal-oxide-semiconductor
M1 G poles, metal-oxide-semiconductor M1 D poles connection 12V power supplys, metal-oxide-semiconductor M1 S poles connection metal-oxide-semiconductor M2 D poles, metal-oxide-semiconductor M2 S poles connect
Ground, metal-oxide-semiconductor M2 G poles concatenation operation amplifier U2 output end.The operational amplifier U1 and operational amplifier U2 are used
LM358。
Operational amplifier U1 and U2 form comparator.When "-" input terminal voltage is higher than "+" input, comparator output
Low level, when "-" input terminal voltage is less than "+" input, comparator output high level.When V3 voltages are higher than 1.5V, half
Bridge driver exports low level, when V3 voltages are less than 1.5V, half-bridge driver output high level.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as to the involved claim of limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It is appreciated that other embodiment.
Claims (2)
1. a kind of mosfet driver, including operational amplifier U1 and operational amplifier U2, it is characterised in that the operation amplifier
Device U1 in-phase ends connect 1.5V power supplys, operational amplifier U1 end of oppisite phase difference connecting signal source V3 and the same phases of operational amplifier U2
End, operational amplifier U2 end of oppisite phase connection 1.5V power supplys, operational amplifier U1 output ends connection metal-oxide-semiconductor M1 G poles, metal-oxide-semiconductor M1
D poles connection 12V power supplys, metal-oxide-semiconductor M1 S poles connection metal-oxide-semiconductor M2 D poles, metal-oxide-semiconductor M2 S poles ground connection, metal-oxide-semiconductor M2 G poles connect
Connect operational amplifier U2 output end.
2. mosfet driver according to claim 1, it is characterised in that the operational amplifier U1 and operational amplifier
U2 uses LM358.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710701296.3A CN107425836A (en) | 2017-08-16 | 2017-08-16 | A kind of mosfet driver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710701296.3A CN107425836A (en) | 2017-08-16 | 2017-08-16 | A kind of mosfet driver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107425836A true CN107425836A (en) | 2017-12-01 |
Family
ID=60438189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710701296.3A Pending CN107425836A (en) | 2017-08-16 | 2017-08-16 | A kind of mosfet driver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107425836A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86210837U (en) * | 1986-12-29 | 1987-11-07 | 河北省科学院自动化研究所 | Power supply inverter consisting of integrated operational amplifiers |
| EP0764473A2 (en) * | 1995-09-25 | 1997-03-26 | Nordson Corporation | Improved electric gun driver |
| US20090167747A1 (en) * | 2007-12-27 | 2009-07-02 | Byd Company Limited | Tft-lcd driver circuit and lcd devices |
| CN101785187A (en) * | 2007-05-21 | 2010-07-21 | 先进模拟科技公司 | Reduce the MOSFET gate drivers of power consumption |
| CN201639533U (en) * | 2009-09-30 | 2010-11-17 | 依必安派特风机(上海)有限公司 | Power driver |
| CN102623061A (en) * | 2012-03-27 | 2012-08-01 | 上海宏力半导体制造有限公司 | Voltage stabilizing circuit for inhibition voltage of storage |
| CN106569014A (en) * | 2016-11-11 | 2017-04-19 | 中国人民解放军海军工程大学 | IGBT collector voltage discrete measurement circuit |
| CN206323284U (en) * | 2017-01-12 | 2017-07-11 | 深圳市群芯科创电子有限公司 | A kind of high-voltage MOS pipe drive circuit |
-
2017
- 2017-08-16 CN CN201710701296.3A patent/CN107425836A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86210837U (en) * | 1986-12-29 | 1987-11-07 | 河北省科学院自动化研究所 | Power supply inverter consisting of integrated operational amplifiers |
| EP0764473A2 (en) * | 1995-09-25 | 1997-03-26 | Nordson Corporation | Improved electric gun driver |
| CN101785187A (en) * | 2007-05-21 | 2010-07-21 | 先进模拟科技公司 | Reduce the MOSFET gate drivers of power consumption |
| US20090167747A1 (en) * | 2007-12-27 | 2009-07-02 | Byd Company Limited | Tft-lcd driver circuit and lcd devices |
| CN201639533U (en) * | 2009-09-30 | 2010-11-17 | 依必安派特风机(上海)有限公司 | Power driver |
| CN102623061A (en) * | 2012-03-27 | 2012-08-01 | 上海宏力半导体制造有限公司 | Voltage stabilizing circuit for inhibition voltage of storage |
| CN106569014A (en) * | 2016-11-11 | 2017-04-19 | 中国人民解放军海军工程大学 | IGBT collector voltage discrete measurement circuit |
| CN206323284U (en) * | 2017-01-12 | 2017-07-11 | 深圳市群芯科创电子有限公司 | A kind of high-voltage MOS pipe drive circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171201 |
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| RJ01 | Rejection of invention patent application after publication |