CN107424897A - Plasma surface processor and plasma apparatus cavity body structure - Google Patents
Plasma surface processor and plasma apparatus cavity body structure Download PDFInfo
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- CN107424897A CN107424897A CN201710343046.7A CN201710343046A CN107424897A CN 107424897 A CN107424897 A CN 107424897A CN 201710343046 A CN201710343046 A CN 201710343046A CN 107424897 A CN107424897 A CN 107424897A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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Abstract
本发明涉及真空设备领域,公开了一种等离子体表面处理设备和等离子体设备腔体结构,等离子体设备腔体结构包括:料盒、射频电极和接地电极;等离子体表面处理设备包括设置有进气模块和抽气口的真空等离子腔体,真空等离子腔体内设置有料盒、射频电极和接地电极。料盒内装有多个标的物,这些标的物在料盒内间隔设置,并使任意相邻的两个标的物之间预留有供气流通过的间隙;料盒的侧壁上设置有若干个通风槽,通风槽和间隙数量相对应设置,使得通风槽和间隙共同构成了经过标的物表面的气流通道;射频电极位于料盒的一侧,且正对气流通道;接地电极至少有一部分位于接地电极位于料盒的另一侧,且正对气流通道。本发明能够提高标的物的表面处理效果。
The invention relates to the field of vacuum equipment, and discloses a plasma surface treatment equipment and a cavity structure of the plasma equipment. The cavity structure of the plasma equipment includes: a material box, a radio frequency electrode and a grounding electrode; the plasma surface treatment equipment includes The gas module and the vacuum plasma cavity of the gas extraction port are provided with a material box, a radio frequency electrode and a ground electrode in the vacuum plasma cavity. There are multiple targets in the material box, and these targets are arranged at intervals in the material box, and a gap for air flow is reserved between any two adjacent targets; there are several targets on the side wall of the material box Ventilation slots, the number of ventilation slots and gaps are set correspondingly, so that the ventilation slots and gaps together form an air flow channel passing through the surface of the target; the radio frequency electrode is located on one side of the material box, and is facing the air flow channel; at least a part of the ground electrode is located on the ground The electrodes are located on the other side of the cartridge, facing the airflow channel. The invention can improve the surface treatment effect of the target object.
Description
技术领域technical field
本发明涉及真空设备领域,特别涉及一种等离子体表面处理设备和等离子体设备腔体结构。The invention relates to the field of vacuum equipment, in particular to a plasma surface treatment equipment and a cavity structure of the plasma equipment.
背景技术Background technique
真空等离子体清洗工艺,是指在真空腔体里,通过电极,在一定的压力情况下产生高能量的无序等离子体,通过等离子体轰击被清洗产品,也就是标的物表面,以达到清洗目的的一种等离子体表面处理工艺。The vacuum plasma cleaning process refers to the generation of high-energy disordered plasma under a certain pressure through the electrodes in the vacuum chamber, and the plasma bombards the product to be cleaned, that is, the surface of the target object, to achieve the purpose of cleaning A plasma surface treatment process.
半导体衬底、引线框架、集成电路板是现今半导体生产流程各个阶段的产品。在生产过程中,常常都需要利用到真空等离子体表面处理设备来清洗表面。因此这些产品都是常见的真空等离子清洗的标的物。Semiconductor substrates, lead frames, and integrated circuit boards are products at various stages of today's semiconductor production process. In the production process, it is often necessary to use vacuum plasma surface treatment equipment to clean the surface. These products are therefore common targets for vacuum plasma cleaning.
在现有的技术中,通常通过料盒盛放标的物,在料盒上常常设置有通风槽,这些通风槽用于通过等离子气体,以保证清洗效果。In the prior art, the target object is usually contained in a magazine, and ventilation slots are often arranged on the magazine, and these ventilation slots are used to pass plasma gas to ensure cleaning effect.
在表面处理时,气体是否能够有效通过标的物表面及气体均匀性是影响处理效果的重要因素。然而由于现有技术的结构限制,气体在经过通风槽时,难以有效地流过标的物的中心部位,尽管标的物的边缘处理效果符合预期,标的物的中部的处理效果却难以令人满意。During surface treatment, whether the gas can effectively pass through the surface of the target and the uniformity of the gas are important factors affecting the treatment effect. However, due to the structural limitations of the prior art, it is difficult for the gas to effectively flow through the center of the object when passing through the ventilation slots. Although the edge treatment effect of the object meets expectations, the treatment effect in the middle of the object is not satisfactory.
发明内容Contents of the invention
本发明的目的在于提供一种等离子体表面处理设备,能够提高标的物表面的处理效果。The purpose of the present invention is to provide a plasma surface treatment equipment, which can improve the treatment effect on the surface of the object.
为了解决上述技术问题,本发明提供了一种真空等离子体表面处理设备,包括:In order to solve the above technical problems, the present invention provides a vacuum plasma surface treatment equipment, comprising:
设置有进气模块和抽气口的真空等离子体腔体,真空等离子腔体内设置有料盒、射频电极和接地电极;A vacuum plasma chamber with an air intake module and an air extraction port is provided, and a material box, a radio frequency electrode and a ground electrode are arranged in the vacuum plasma chamber;
料盒内装有多个标的物,这些标的物在料盒内间隔设置,并使任意相邻的两个标的物之间预留有供气流通过的间隙;在料盒的侧壁上开有若干个通风槽,通风槽和间隙相对应设置,使得通风槽和间隙共同构成了经过标的物表面的气流通道;There are multiple targets in the material box, and these targets are arranged at intervals in the material box, and a gap for air flow is reserved between any adjacent two targets; there are several holes on the side wall of the material box. Two ventilation slots, the ventilation slots and the gaps are set correspondingly, so that the ventilation slots and the gaps together form an air flow channel through the surface of the target;
射频电极位于料盒的一侧,且正对气流通道;The radio frequency electrode is located on one side of the cartridge and is facing the airflow channel;
接地电极至少有一部分位于料盒的另一侧,且正对气流通道;At least a part of the grounding electrode is located on the other side of the cartridge and faces the airflow channel;
气体经由进气模块进入真空等离子腔体内,在射频电极和接地电极的电场作用下电离,通过气流通道并对标的物的表面进行处理,再从抽气口中被抽出。The gas enters the vacuum plasma cavity through the air intake module, is ionized under the electric field of the radio frequency electrode and the ground electrode, passes through the gas flow channel and treats the surface of the target object, and then is drawn out from the gas extraction port.
本发明还提供了一种等离子体设备腔体结构,包括:料盒、射频电极和接地电极;The present invention also provides a plasma equipment cavity structure, including: a material box, a radio frequency electrode and a ground electrode;
料盒内装有多个标的物,这些标的物在料盒内间隔设置,并使任意相邻的两个标的物之间预留有供气流通过的间隙;料盒的侧壁上开有若干个通风槽,通风槽和间隙相对应设置,使得通风槽和间隙共同构成了经过标的物表面的气流通道;There are multiple targets in the material box, and these targets are arranged at intervals in the material box, and a gap for air flow is reserved between any adjacent two targets; there are several holes on the side wall of the material box. The ventilation slots, the ventilation slots and the gaps are arranged correspondingly, so that the ventilation slots and the gaps together constitute the air flow passage through the surface of the target;
射频电极位于料盒的一侧,且正对气流通道;The radio frequency electrode is located on one side of the cartridge and is facing the airflow channel;
接地电极至少有一部分位于料盒的另一侧,且正对气流通道。At least a part of the grounding electrode is located on the other side of the magazine, facing the airflow channel.
相对现有技术而言,本发明通过将射频电极设置在料盒的一侧,使得从射频电极中放出的等离子气体可以毫无阻碍地通过预留的气流通道。由于气体的流动路径更加可控,因此能够提高标的物的中央部位的处理效果。Compared with the prior art, the present invention arranges the radio frequency electrode on one side of the material box, so that the plasma gas released from the radio frequency electrode can pass through the reserved air flow channel without hindrance. Because the flow path of the gas is more controllable, the treatment effect of the central part of the target can be improved.
作为优选,标的物为半导体衬底、引线框架或集成电路板。此三者均为半导体工业中的常规产品,改进这三者的表面处理效果具有重要意义。Preferably, the target object is a semiconductor substrate, a lead frame or an integrated circuit board. These three are conventional products in the semiconductor industry, and it is of great significance to improve the surface treatment effect of these three.
作为优选,接地电极形成为框体,料盒位于接地电极所形成的框体内部;Preferably, the ground electrode is formed as a frame, and the magazine is located inside the frame formed by the ground electrode;
其中,框体上与射频电极相对的面上设置有若干个通风孔,气体通过气流通道和通风孔,再从抽气口中被抽出。通常,真空腔为方形腔体,而接地电极形成的框体在真空腔的内部。设置通风孔,使得气体在通过气流通道后可以直接从通风孔散出,其流动更加顺畅。Wherein, several ventilation holes are provided on the surface of the frame body opposite to the radio frequency electrode, and the gas passes through the air flow channel and the ventilation holes, and then is drawn out from the air suction port. Usually, the vacuum chamber is a square chamber, and the frame formed by the ground electrode is inside the vacuum chamber. Ventilation holes are provided, so that the gas can be directly released from the ventilation holes after passing through the airflow channel, and the gas flows more smoothly.
进一步地,作为优选,等离子体表面处理设备还包括设置在接地电极所形成的框体的内壁上的定位条,定位条用于限定料盒的位置。设置定位条限定料盒的位置,不仅节约了料盒定位的时间,而且经由定位条的阻挡,可以避免过多的气体在料盒与电极之间流走,改善气体在腔体内流通的均匀性。Further, preferably, the plasma surface treatment equipment further includes a positioning bar arranged on the inner wall of the frame formed by the ground electrode, and the positioning bar is used to limit the position of the cartridge. Setting the positioning bar to limit the position of the material box not only saves the time for positioning the material box, but also prevents too much gas from flowing away between the material box and the electrode through the blocking of the positioning bar, and improves the uniformity of gas circulation in the cavity .
更进一步地,作为优选,料盒为长方体,定位条有4个,且这四个定位条分别对应料盒在长度方向上的四条边形成卡槽,料盒沿所述长度方向滑动并卡入所述卡槽。Further, preferably, the magazine is a cuboid, and there are four positioning bars, and these four positioning bars respectively correspond to the four sides of the magazine in the length direction to form a slot, and the magazine slides along the length direction and snaps in The card slot.
采用滑动卡入的方式可以方便料盒的装卸,四角定位也具有稳定的固定效果。The way of sliding and snapping in can facilitate the loading and unloading of the material box, and the positioning of the four corners also has a stable fixing effect.
作为优选,通风孔的数量、形状和位置都分别与通风槽相一致。框体上的通风孔与料盒的侧壁上的通风槽一一对应,能够尽可能地减少阻挡物,使气体的流动更加流畅。Preferably, the number, shape and position of the ventilation holes are respectively consistent with the ventilation slots. The ventilation holes on the frame correspond to the ventilation grooves on the side wall of the material box one by one, which can reduce obstructions as much as possible and make the gas flow more smoothly.
另外,作为优选,真空等离子腔体内设置有偶数个料盒,且这些料盒被分成两组,这两组料盒分别位于射频电极的两侧。料盒和射频电极被包围在接地电极所形成的框体的内部。在真空等离子腔体内的两侧都设置料盒可以提高真空等离子体腔体的空间利用率。In addition, preferably, an even number of cartridges is arranged in the vacuum plasma chamber, and these cartridges are divided into two groups, and the two groups of cartridges are respectively located on both sides of the radio frequency electrode. The cartridge and the radio frequency electrode are enclosed inside the frame formed by the ground electrode. Arranging magazines on both sides of the vacuum plasma chamber can improve the space utilization rate of the vacuum plasma chamber.
作为优选,抽气口位于正对射频电极的位置,且抽气口的抽气方向垂直于气体在气流通道内的流动方向。相对平行布置的抽气口,垂直布置的抽气口统一了气体流动的方向,防止气体对冲。Preferably, the gas pumping port is located at a position facing the radio frequency electrode, and the gas pumping direction of the gas pumping port is perpendicular to the flow direction of the gas in the gas flow channel. Compared with the gas inlets arranged in parallel, the gas inlets arranged vertically unify the direction of the gas flow and prevent gas from hedging.
另外,作为优选,进气模块位于正对射频电极的位置,且进气模块的进气方向与料盒的高度方向相一致。当进气模块的进气方向与料盒高度方向一致时,可以避免射频电极对气体流向的阻挡。而且,正对射频电极设置的进气模块能够使气体充分电离再进入气流通道处理标的物的表面。In addition, preferably, the air intake module is located at a position facing the radio frequency electrode, and the air intake direction of the air intake module is consistent with the height direction of the magazine. When the air intake direction of the air intake module is consistent with the height direction of the material box, the obstruction of the gas flow direction by the radio frequency electrode can be avoided. Moreover, the air intake module directly facing the radio frequency electrode can fully ionize the gas and then enter the gas flow channel to process the surface of the target.
作为优选,进气模块有两个,且这两个进气模块分别位于射频电极的两侧。两侧都设置有进气模块,相比单一一侧的进气模块而言也能够更好地利用真空等离子体腔体的内部空间,提高气体分布的均匀性。Preferably, there are two air intake modules, and the two air intake modules are respectively located on both sides of the radio frequency electrode. Air intake modules are provided on both sides, which can make better use of the inner space of the vacuum plasma cavity and improve the uniformity of gas distribution compared with the intake modules on one side.
另外,作为优选,表面处理包括清洗、活化、氧化物去除、纳米涂层或者表面接枝。本发明能够实现多种类型的表面处理,因此能够满足不同材质的表面处理要求。In addition, preferably, the surface treatment includes cleaning, activation, oxide removal, nano-coating or surface grafting. The invention can realize various types of surface treatment, and thus can meet the surface treatment requirements of different materials.
附图说明Description of drawings
图1是本发明第一实施方式料盒的立体示意图;Fig. 1 is a three-dimensional schematic diagram of a magazine according to the first embodiment of the present invention;
图2是本发明第一实施方式等离子体表面处理设备的立体示意图;Fig. 2 is a three-dimensional schematic diagram of a plasma surface treatment device according to a first embodiment of the present invention;
图3是本发明第二实施方式等离子体表面处理设备的立体示意图;3 is a perspective view of a plasma surface treatment device according to a second embodiment of the present invention;
图4是本发明第三实施方式等离子体表面处理设备的正视示意图;4 is a schematic front view of plasma surface treatment equipment according to a third embodiment of the present invention;
图5是本发明第四实施方式等离子体表面处理设备的立体示意图;Fig. 5 is a three-dimensional schematic diagram of a plasma surface treatment device according to a fourth embodiment of the present invention;
图6是本发明第五、第六实施方式等离子体表面处理设备的仰视剖视示意图;Fig. 6 is a bottom-view sectional schematic view of the plasma surface treatment equipment according to the fifth and sixth embodiments of the present invention;
图7是本发明第七实施方式等离子体表面处理设备的正视示意图;7 is a schematic front view of plasma surface treatment equipment according to the seventh embodiment of the present invention;
图8是本发明第八实施方式等离子体设备腔体结构的正视示意图;Fig. 8 is a schematic front view of the cavity structure of the plasma equipment according to the eighth embodiment of the present invention;
图9是本发明第八实施方式等离子体设备腔体结构的立体示意图。Fig. 9 is a schematic perspective view of the cavity structure of the plasma equipment according to the eighth embodiment of the present invention.
附图标记说明:Explanation of reference signs:
1-真空等离子体腔体;2-料盒;3-进气模块;4-接地电极;4a-定位条;4b-通风孔;5-射频电极;6-标的物;7-抽气口;8-气流通道;8a-间隙;8b-通风槽;。1-vacuum plasma cavity; 2-material box; 3-intake module; 4-ground electrode; 4a-positioning bar; 4b-ventilation hole; 5-radio frequency electrode; Airflow channel; 8a-gap; 8b-ventilation slot;.
具体实施方式detailed description
实施方式一Implementation Mode 1
本发明的第一实施方式提供了一种等离子体表面处理设备,参见图1、图2结合所示,包括:The first embodiment of the present invention provides a plasma surface treatment device, as shown in Figure 1 and Figure 2, including:
设置有进气模块3和抽气口7的真空等离子体腔体1,真空等离子体腔体1内设置有料盒2、射频电极5和接地电极4;A vacuum plasma chamber 1 provided with an air intake module 3 and an air extraction port 7, and a cartridge 2, a radio frequency electrode 5 and a ground electrode 4 are arranged in the vacuum plasma chamber 1;
料盒2内装有多个标的物6,这些标的物6在料盒2内间隔设置,并使任意相邻的两个标的物6之间预留有供气流通过的间隙8a;在料盒2的侧壁上开有若干个通风槽8b,通风槽8b和间隙8a相对应设置,使得通风槽8b和间隙8a共同构成了经过标的物6表面的气流通道8;A plurality of targets 6 are housed in the magazine 2, and these targets 6 are arranged at intervals in the magazine 2, and a gap 8a for air flow is reserved between any adjacent two targets 6; There are several ventilation grooves 8b on the side wall, and the ventilation grooves 8b and the gaps 8a are set correspondingly, so that the ventilation grooves 8b and the gaps 8a together constitute the airflow channel 8 passing through the surface of the target 6;
射频电极5位于料盒2的一侧,且正对气流通道8;The radio frequency electrode 5 is located on one side of the cartridge 2 and faces the air flow channel 8;
接地电极4至少有一部分位于料盒2的另一侧,且正对气流通道8;At least a part of the ground electrode 4 is located on the other side of the cartridge 2, and is facing the airflow channel 8;
气体经由进气模块3进入真空等离子体腔体1内,在射频电极5和接地电极4的电场作用下电离,通过气流通道8并对标的物6的表面进行处理,再从抽气口7中被抽出。The gas enters the vacuum plasma cavity 1 through the air intake module 3, is ionized under the electric field of the radio frequency electrode 5 and the ground electrode 4, passes through the gas flow channel 8 and treats the surface of the target object 6, and then is drawn out from the gas extraction port 7 .
其中,等离子体表面处理设备中可以设置有一个或多个料盒2.本发明的发明人建议,在每个料盒2中以每隔0.1cm至10cm设置一长为0.1cm至50cm、高为0.1cm至10cm的通风槽8b为优选的实施方案。(要写在权项中)例如,每隔0.2cm至2cm设置一长为1cm至5cm、高为0.2cm至2cm的通风槽8b为优选的实施方案。当然,实际使用时也可以不限于这一尺寸方案。优选地,通风槽8b和间隙8a数量可以相同且一一对应设置,更好地提高标的物6中部的处理效果。Wherein, one or more cartridges 2 can be arranged in the plasma surface treatment equipment. The inventor of the present invention suggests that a length of 0.1cm to 50cm and a height of 0.1cm to 10cm are set in each cartridge 2. A ventilation slot 8b of 0.1 cm to 10 cm is a preferred embodiment. (To be written in the claim) For example, it is a preferred embodiment that a ventilation slot 8b with a length of 1 cm to 5 cm and a height of 0.2 cm to 2 cm is set every 0.2 cm to 2 cm. Of course, it may not be limited to this size solution in actual use. Preferably, the number of the ventilation slots 8b and the gaps 8a can be the same and set in one-to-one correspondence, so as to better improve the treatment effect in the middle of the object 6 .
本领域普通技术人员知道,通过等离子体表面处理,标的物6表面能够发生物理、化学变化,例如对标的物6表面产生刻蚀而使其粗糙,或者,形成致密的交联层,或者引入含氧极性基团,从而使得标的物6的亲水性、粘接性、可染色性、生物相容性或者电性能得到改善。Those of ordinary skill in the art know that through plasma surface treatment, physical and chemical changes can occur on the surface of the target 6, such as etching the surface of the target 6 to make it rough, or forming a dense cross-linked layer, or introducing Oxygen polar groups, so that the hydrophilicity, adhesiveness, dyeability, biocompatibility or electrical properties of the target object 6 are improved.
在本实施方式中,表面处理包括清洗、活化、氧化物去除、纳米涂层或者表面接枝。本发明能够实现多种类型的表面处理,因此能够满足不同材质的表面处理要求,包括零件、薄膜和电路板等。In this embodiment, the surface treatment includes cleaning, activation, oxide removal, nano-coating or surface grafting. The invention can realize various types of surface treatment, so it can meet the surface treatment requirements of different materials, including parts, films and circuit boards.
另外,在本实施方式中,所适用的标的物6为可以层叠堆放的物品。具体来说,标的物6可以为半导体衬底、引线框架或集成电路板。此三者均为半导体工业中的常规产品,改进这三者的表面处理效果具有重要意义。In addition, in this embodiment, the applicable target object 6 is an article that can be stacked. Specifically, the target object 6 may be a semiconductor substrate, a lead frame or an integrated circuit board. These three are conventional products in the semiconductor industry, and it is of great significance to improve the surface treatment effect of these three.
相对现有技术而言,本发明通过将射频电极5设置在料盒2的一侧,使得从射频电极5中放出的等离子气体可以毫无阻碍地通过预留的气流通道8。由于气体的流动路径更加可控,因此能够提高标的物6的中央部位的处理效果。Compared with the prior art, the present invention arranges the radio frequency electrode 5 on one side of the cartridge 2, so that the plasma gas released from the radio frequency electrode 5 can pass through the reserved air flow channel 8 without hindrance. Since the flow path of the gas is more controllable, the treatment effect of the central part of the object 6 can be improved.
实施方式二Implementation mode two
本发明的第二实施方式提供了一种真空等离子体清洁设备。第二实施方式是第一实施方式的进一步改进,主要改进之处在于,在本发明的第二实施方式中,参见图3所示,接地电极4形成为框体,料盒2位于接地电极4所形成的框体内部。A second embodiment of the present invention provides a vacuum plasma cleaning device. The second embodiment is a further improvement of the first embodiment. The main improvement is that, in the second embodiment of the present invention, as shown in FIG. Inside the formed frame.
其中,框体上与射频电极5相对的面上设置有若干个通风孔4b,气体通过气流通道8和通风孔4b,再从抽气口7中被抽出。通常,真空等离子体腔体1为方形,而接地电极4形成的框体在真空等离子体腔体1的内部。设置通风孔4b,使得气体在通过气流通道8后可以直接从通风孔4b散出,其流动更加顺畅。Among them, several ventilation holes 4b are provided on the surface of the frame body opposite to the radio frequency electrode 5, and the gas passes through the air flow channel 8 and the ventilation holes 4b, and then is drawn out from the air suction port 7. Usually, the vacuum plasma chamber 1 is square, and the frame formed by the ground electrode 4 is inside the vacuum plasma chamber 1 . Ventilation holes 4b are provided so that the gas can be released directly from the ventilation holes 4b after passing through the airflow channel 8, and the flow thereof is smoother.
在本实施方式中,通风孔4b的数量、形状和位置可以分别与通风槽8b相一致,也可以如图3所示在框体上均匀密布。框体上的通风孔4b与料盒2的侧壁上的通风槽8b一一对应,能够尽可能地减少阻挡物,使气体的流动更加流畅。In this embodiment, the number, shape and position of the ventilation holes 4b can be consistent with the ventilation grooves 8b, or can be uniformly and densely distributed on the frame as shown in FIG. 3 . The ventilation holes 4b on the frame correspond one-to-one to the ventilation slots 8b on the side wall of the cartridge 2, which can reduce obstacles as much as possible and make the gas flow more smoothly.
实施方式三Implementation Mode Three
本发明的第三实施方式提供了一种真空等离子体清洁设备。第三实施方式是第一或第二实施方式中任意一实施方式的进一步改进,主要改进之处在于,在本发明的第三实施方式中,参见图4所示,等离子体表面处理设备还包括设置在接地电极4所形成的框体的内壁上的定位条4a,定位条4a用于限定料盒2的位置。设置定位条4a限定料盒2的位置,不仅节约了料盒2定位的时间,而且经由定位条4a的阻挡,可以避免过多的气体在料盒2与电极之间流走,改善气体在腔体内流通的均匀性。A third embodiment of the present invention provides a vacuum plasma cleaning device. The third embodiment is a further improvement of any one of the first or second embodiments. The main improvement is that, in the third embodiment of the present invention, as shown in FIG. 4 , the plasma surface treatment equipment also includes The positioning bar 4a is arranged on the inner wall of the frame body formed by the ground electrode 4, and the positioning bar 4a is used to limit the position of the cartridge 2. Setting the positioning bar 4a to limit the position of the material box 2 not only saves the time for locating the material box 2, but also prevents too much gas from flowing between the material box 2 and the electrode through the blocking of the positioning bar 4a, and improves the flow of gas in the cavity. Uniformity of circulation in the body.
在本实施方式中,料盒2为长方体,定位条4a有4个,且这四个定位条4a分别对应所述料盒2在长度方向上的四条边形成卡槽,所述料盒2沿所述长度方向滑动并卡入所述卡槽。In this embodiment, the material box 2 is a cuboid, and there are four positioning bars 4a, and these four positioning bars 4a respectively correspond to the four sides of the material box 2 in the length direction to form a slot, and the material box 2 along the The longitudinal direction slides and snaps into the slot.
采用滑动卡入的方式可以方便料盒2的装卸,四角定位也具有稳定的固定效果。The loading and unloading of the material box 2 can be facilitated by adopting the way of sliding and snapping in, and the positioning of the four corners also has a stable fixing effect.
实施方式四Implementation Mode Four
本发明的第四实施方式提供了一种等离子体表面处理设备。第四实施方式是第二实施方式的进一步改进,主要改进之处在于,在本发明的第四实施方式中,参见图5所示,真空等离子体腔体1内设置有偶数个料盒2,且这些料盒2被分成两组,这两组料盒2分别位于射频电极5的两侧。A fourth embodiment of the present invention provides a plasma surface treatment device. The fourth embodiment is a further improvement of the second embodiment. The main improvement is that, in the fourth embodiment of the present invention, as shown in FIG. These cartridges 2 are divided into two groups, and the two groups of cartridges 2 are respectively located on both sides of the radio frequency electrode 5 .
料盒2和射频电极5被包围在接地电极4所形成的框体的内部。在真空等离子体腔体1内的两侧都设置料盒2可以提高真空等离子体腔体1的空间利用率。The magazine 2 and the radio frequency electrode 5 are enclosed in the frame formed by the ground electrode 4 . The space utilization rate of the vacuum plasma chamber 1 can be improved by arranging the cartridges 2 on both sides of the vacuum plasma chamber 1 .
实施方式五Implementation Mode Five
本发明的第五实施方式提供了一种等离子体表面处理设备。第五实施方式是第一至第四实施方式中任意一实施方式的进一步改进,具体而言,在本发明的第五实施方式中,参见图6所示,对抽气口7的位置作出了进一步改进。A fifth embodiment of the present invention provides a plasma surface treatment device. The fifth embodiment is a further improvement of any one of the first to fourth embodiments. Specifically, in the fifth embodiment of the present invention, as shown in FIG. Improve.
其中抽气口7位于正对射频电极5的位置,且抽气口7的抽气方向垂直于气体在气流通道8内的流动方向。相对平行布置的抽气口7,垂直布置的抽气口7统一了气体流动的方向,防止气体对冲。The pumping port 7 is located at the position facing the RF electrode 5 , and the pumping direction of the pumping port 7 is perpendicular to the flow direction of the gas in the gas flow channel 8 . Compared with the gas extraction ports 7 arranged in parallel, the gas extraction ports 7 arranged vertically unify the direction of gas flow and prevent the gas from colliding.
实施方式六Embodiment Six
本发明的第六实施方式提供了一种等离子体表面处理设备。第六实施方式是第一至第五实施方式中任意一实施方式的进一步改进,主要改进之处在于,在本发明的第六实施方式中,同样参见图6所示,进气模块3位于正对射频电极5的位置,且进气模块3的进气方向与料盒2的高度方向相一致。A sixth embodiment of the present invention provides a plasma surface treatment device. The sixth embodiment is a further improvement of any one of the first to fifth embodiments. The main improvement is that, in the sixth embodiment of the present invention, also referring to FIG. 6 , the air intake module 3 is located at the front For the position of the radio frequency electrode 5 , the air intake direction of the air intake module 3 is consistent with the height direction of the cartridge 2 .
具体而言,参见图6,进气模块3包括沿着射频电极5的长度方向间隔设置的多个进气孔,从这些进气孔吹出的气体可以更好地经过射频电极5的表面。Specifically, referring to FIG. 6 , the air intake module 3 includes a plurality of air intake holes arranged at intervals along the length direction of the radio frequency electrode 5 , and the gas blown from these air intake holes can better pass through the surface of the radio frequency electrode 5 .
其中,优选的,可以在每4cm至5cm的间隔下设置进气孔,而且进气孔的尺寸半径可以是3mm至5mm。进气模块3正对射频电极5时,可以避免射频电极5对气体流向的阻挡。而且,正对射频电极5设置的进气模块3能够使气体充分电离再进入气流通道8处理标的物6的表面。Wherein, preferably, air inlet holes may be provided at intervals of 4 cm to 5 cm, and the size radius of the air inlet holes may be 3 mm to 5 mm. When the air intake module 3 faces the radio frequency electrode 5, it can avoid the radio frequency electrode 5 from obstructing the gas flow direction. Moreover, the air intake module 3 disposed facing the radio frequency electrode 5 can fully ionize the gas and then enter the gas flow channel 8 to process the surface of the target object 6 .
实施方式七Implementation Mode Seven
本发明的第七实施方式提供了一种等离子体表面处理设备。第七实施方式是第六实施方式的进一步改进,主要改进之处在于,在本发明的第七实施方式中,参见图7所示,进气模块3有两个,且这两个进气模块3分别位于射频电极5的两侧。两侧都设置有进气模块3,相比单一一侧的进气模块3而言也能够更好地利用真空等离子体腔体1的内部空间,提高气体分布的均匀性。A seventh embodiment of the present invention provides a plasma surface treatment device. The seventh embodiment is a further improvement of the sixth embodiment. The main improvement is that, in the seventh embodiment of the present invention, as shown in FIG. 7, there are two air intake modules 3, and the two air intake modules 3 are located on both sides of the radio frequency electrode 5 respectively. The air intake modules 3 are provided on both sides, so that the inner space of the vacuum plasma chamber 1 can be better utilized compared with the air intake modules 3 on one side, and the uniformity of gas distribution can be improved.
实施方式八Embodiment Eight
本发明的第八实施方式提供了一种等离子体设备腔体结构,参见图8所示,包括料盒2、射频电极5和接地电极4。The eighth embodiment of the present invention provides a cavity structure of a plasma device, as shown in FIG. 8 , including a cartridge 2 , a radio frequency electrode 5 and a ground electrode 4 .
在本发明的第八实施方式中,参见图9所示,料盒2内装有多个标的物6,这些标的物6在料盒2内间隔设置,并使任意相邻的两个标的物6之间预留有供气流通过的间隙8a;料盒2的侧壁上开有若干个通风槽8b,通风槽8b和间隙8a相对应设置,使得通风槽8b和间隙8a共同构成了经过标的物6表面的气流通道8;In the eighth embodiment of the present invention, as shown in FIG. 9, a plurality of targets 6 are housed in the cartridge 2, and these targets 6 are arranged at intervals in the cartridge 2, and any adjacent two targets 6 A gap 8a is reserved between them for the passage of air flow; several ventilation grooves 8b are opened on the side wall of the cartridge 2, and the ventilation groove 8b and the gap 8a are set correspondingly, so that the ventilation groove 8b and the gap 8a together constitute the passage of the target object. 6 surface air flow channels 8;
射频电极5位于料盒2的一侧,且正对气流通道8;The radio frequency electrode 5 is located on one side of the cartridge 2 and faces the air flow channel 8;
接地电极4至少有一部分位于料盒2的另一侧,且正对气流通道8。At least a part of the ground electrode 4 is located on the other side of the magazine 2 and faces the airflow channel 8 .
接地电极4形成为框体,料盒2位于接地电极4所形成的框体内部;The ground electrode 4 is formed as a frame, and the cartridge 2 is located inside the frame formed by the ground electrode 4;
其中,框体上与射频电极5相对的面上设置有若干个通风孔4b。Wherein, several ventilation holes 4b are provided on the surface of the frame body opposite to the radio frequency electrode 5 .
气体进入等离子体设备腔体结构内,在射频电极5和接地电极4的电场作用下电离,通过气流通道8并对标的物6的表面进行处理,再被抽出。优选地,通风槽8b和间隙8a数量可以相同且一一对应设置,更好地提高标的物6中部的处理效果。The gas enters the cavity structure of the plasma equipment, is ionized under the action of the electric field of the radio frequency electrode 5 and the ground electrode 4, passes through the gas flow channel 8 and processes the surface of the target object 6, and is then extracted. Preferably, the number of the ventilation slots 8b and the gaps 8a can be the same and set in one-to-one correspondence, so as to better improve the treatment effect in the middle of the object 6 .
在本实施方式中,等离子体设备腔体结构还包括设置在接地电极4所形成的框体的内壁上的定位条4a,定位条4a用于限定料盒2的位置。设置通风孔4b,使得气体在通过气流通道8后可以直接从通风孔4b散出,其流动更加顺畅。其中通风孔4b的数量、形状和位置可以分别与通风槽8b相一致。In this embodiment, the cavity structure of the plasma equipment further includes a positioning bar 4 a arranged on the inner wall of the frame formed by the ground electrode 4 , and the positioning bar 4 a is used to limit the position of the cartridge 2 . Ventilation holes 4b are provided so that the gas can be released directly from the ventilation holes 4b after passing through the airflow channel 8, and the flow thereof is smoother. The number, shape and position of the ventilation holes 4b can be consistent with the ventilation slots 8b respectively.
料盒2可以为长方体,定位条4a可以有4个,且这四个定位条4a可以分别对应料盒2在长度方向上的四条边形成卡槽,料盒2能够沿长度方向滑动并卡入卡槽。采用滑动卡入的方式可以方便料盒2的装卸,四角定位也具有稳定的固定效果。The material box 2 can be a cuboid, and there can be four positioning bars 4a, and these four positioning bars 4a can respectively correspond to the four sides of the material box 2 in the length direction to form a card slot, and the material box 2 can slide along the length direction and snap in card slot. The loading and unloading of the material box 2 can be facilitated by adopting the way of sliding and snapping in, and the positioning of the four corners also has a stable fixing effect.
值得一提的是,本实施方式的等离子体设备腔体结构并不局限于应用在等离子体表面处理设备上。在其它的等离子体设备的领域也能得到应用。It is worth mentioning that the cavity structure of the plasma equipment in this embodiment is not limited to be applied to plasma surface treatment equipment. It can also be applied in other fields of plasma equipment.
本领域的普通技术人员可以理解,在上述的各实施方式中,为了使读者更好地理解本申请而提出了许多技术细节。但是,即使没有这些技术细节和基于上述各实施方式的种种变化和修改,也可以基本实现本申请各权利要求所要求保护的技术方案。因此,在实际应用中,可以在形式上和细节上对上述实施方式作各种改变,而不偏离本发明的精神和范围。Those of ordinary skill in the art can understand that in the foregoing implementation manners, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the above-mentioned embodiments, the technical solution claimed in each claim of the present application can be basically realized. Therefore, in practice, various changes may be made to the above-described embodiments in form and detail without departing from the spirit and scope of the present invention.
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Application publication date: 20171201 Assignee: Shanghai Jimagnesium Semiconductor Co.,Ltd. Assignor: SHANGHAI JET PLASMA CO.,LTD. Contract record no.: X2025980019339 Denomination of invention: Plasma surface treatment equipment and plasma equipment chamber structure Granted publication date: 20191115 License type: Open License Record date: 20250828 Application publication date: 20171201 Assignee: Shanghai Jidi Semiconductor Equipment Co.,Ltd. Assignor: SHANGHAI JET PLASMA CO.,LTD. Contract record no.: X2025980019345 Denomination of invention: Plasma surface treatment equipment and plasma equipment chamber structure Granted publication date: 20191115 License type: Open License Record date: 20250828 Application publication date: 20171201 Assignee: Shanghai Jichang Technology Co.,Ltd. Assignor: SHANGHAI JET PLASMA CO.,LTD. Contract record no.: X2025980019353 Denomination of invention: Plasma surface treatment equipment and plasma equipment chamber structure Granted publication date: 20191115 License type: Open License Record date: 20250828 |