CN107393820A - A kind of surface passivation liquid and its application for the passivation of tellurium manganese cadmium plane of crystal - Google Patents
A kind of surface passivation liquid and its application for the passivation of tellurium manganese cadmium plane of crystal Download PDFInfo
- Publication number
- CN107393820A CN107393820A CN201710414294.6A CN201710414294A CN107393820A CN 107393820 A CN107393820 A CN 107393820A CN 201710414294 A CN201710414294 A CN 201710414294A CN 107393820 A CN107393820 A CN 107393820A
- Authority
- CN
- China
- Prior art keywords
- passivation
- crystal
- surface passivation
- passivation solution
- cmt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
技术领域technical field
本发明属于化合物半导体材料制造技术领域，涉及一种表面钝化液及其用于碲锰镉晶体表面钝化的应用，该钝化液能够有效降低探测器表面的漏电流，提高探测器性能。The invention belongs to the technical field of compound semiconductor material manufacturing, and relates to a surface passivation solution and its application for surface passivation of cadmium tellurium manganese crystals. The passivation solution can effectively reduce the leakage current on the surface of a detector and improve the performance of the detector.
背景技术Background technique
碲锰镉(CMT)晶体具有平均原子序数高、禁带宽度大、电阻率高和载流子迁移率寿命积大等优点，由其制成的探测器吸收系数大，计数率大，体积小，使用方便并且能在室温下工作，成为目前核辐射探测器材料的发展重点。CMT的电子能带结构和半导体性质与碲锌镉十分相似，并在某些方面表现更为优异：如Mn2+离子可以更快的增加CMT的禁带宽度，Mn的分凝系数接近于1，生长态的CMT晶体的成分分布更加均匀等。CMT探测器可广泛用于医学成像、环境保护、工业监控、核安全检测、违禁品稽查以及天体物理研究等领域。但是，CMT表面的漏电流会使探测器不耐高压，引起本底噪声，导致器件的能量分辨率和载流子迁移率寿命乘积降低，从而影响其作为室温辐射探测器的应用。因此，需要采取有效的措施对CMT探测器表面进行钝化，以减小漏电流。Cadmium manganese telluride (CMT) crystal has the advantages of high average atomic number, large band gap, high resistivity, and large carrier mobility lifetime product. The detector made of it has a large absorption coefficient, a high count rate, and a small volume. , easy to use and can work at room temperature, has become the focus of the development of nuclear radiation detector materials. The electronic band structure and semiconductor properties of CMT are very similar to those of CdZnTe, and they perform better in some aspects: for example, Mn 2+ ions can increase the forbidden band width of CMT faster, and the segregation coefficient of Mn is close to 1. , the composition distribution of the grown CMT crystal is more uniform. CMT detectors can be widely used in medical imaging, environmental protection, industrial monitoring, nuclear safety detection, contraband inspection and astrophysics research and other fields. However, the leakage current on the surface of the CMT will make the detector not resistant to high voltage, causing background noise, resulting in a decrease in the product of energy resolution and carrier mobility lifetime of the device, thus affecting its application as a room temperature radiation detector. Therefore, it is necessary to take effective measures to passivate the surface of the CMT detector to reduce the leakage current.
化合物半导体的表面缺陷是产生表面漏电流的主要原因。CMT晶体经过化学腐蚀在去除机械抛光带来的损伤的同时会在表面形成富Te层，使表面电阻率降低，导致表面漏电流增大。而高性能的室温辐射探测器要求极低的漏电流。因此，必须采用合适的钝化方法改善CMT晶体的表面性质，即形成高阻氧化层来减少探测器的漏电流，提高探测器的性能。湿化学钝化法是常用的半导体表面处理方法，其优点是工艺和操作简单、成本低、效果好。湿化学钝化法主要是在表面形成硫化物或氧化物的膜。对于CMT的钝化，Kim等人(Effective Surface Passivation of CdMnTe Materials,Journal of ElectronicMaterials,39(2010)1015-1018)采用(NH4)2S溶液对CMT进行硫化，减少了漏电流。其缺点是处理过程须加热，这会在CMT晶体中引入新的缺陷。而氧化则是采用两种或两种以上试剂配合，如NH4F和H2O2的水溶液，其缺点是所需多种试剂且需调节pH值。目前，对于CMT晶体表面钝化的研究较少。因此，有必要发明一种工艺简单、效果好的形成高阻氧化层的钝化方法。Surface defects in compound semiconductors are the main cause of surface leakage currents. After chemical etching, the CMT crystal will form a Te-rich layer on the surface while removing the damage caused by mechanical polishing, which will reduce the surface resistivity and increase the surface leakage current. However, high-performance room-temperature radiation detectors require extremely low leakage currents. Therefore, a suitable passivation method must be used to improve the surface properties of the CMT crystal, that is, to form a high-resistance oxide layer to reduce the leakage current of the detector and improve the performance of the detector. Wet chemical passivation is a commonly used semiconductor surface treatment method, and its advantages are simple process and operation, low cost and good effect. The wet chemical passivation method is mainly to form a film of sulfide or oxide on the surface. For the passivation of CMT, Kim et al. (Effective Surface Passivation of CdMnTe Materials, Journal of Electronic Materials, 39 (2010) 1015-1018) used (NH 4 ) 2 S solution to vulcanize CMT to reduce leakage current. The disadvantage is that the process must be heated, which will introduce new defects in the CMT crystal. The oxidation is to use two or more reagents, such as NH 4 F and H 2 O 2 aqueous solution, the disadvantage is that many reagents are required and the pH value needs to be adjusted. At present, there are few studies on surface passivation of CMT crystals. Therefore, it is necessary to invent a passivation method for forming a high-resistance oxide layer with simple process and good effect.
发明内容Contents of the invention
针对现有技术中的缺陷和不足，本发明的目的在于提供一种表面钝化液及其用于碲锰镉晶体表面钝化的应用，利用该钝化液的钝化工艺简单且有效，尤其是对CMT晶体表面钝化的效果最好，解决传统硫化过程中需加热处理从而引入缺陷的技术问题或氧化工艺较复杂的问题。In view of the defects and deficiencies in the prior art, the object of the present invention is to provide a surface passivation solution and its application for surface passivation of cadmium tellurium manganese crystals. The passivation process utilizing the passivation solution is simple and effective, especially It has the best passivation effect on the surface of CMT crystal, and solves the technical problem of introducing defects due to heat treatment in the traditional vulcanization process or the problem of complicated oxidation process.
为了实现上述目的，本发明的技术方案如下：In order to achieve the above object, the technical scheme of the present invention is as follows:
一种表面钝化液，所述的表面钝化液的钝化剂为过硫酸钾。A surface passivation solution, the passivation agent of the surface passivation solution is potassium persulfate.
具体的，表面钝化液中过硫酸钾的质量百分含量为1％～5％。Specifically, the mass percent content of potassium persulfate in the surface passivation solution is 1%-5%.
一种表面钝化液，包括过硫酸钾和水，过硫酸钾与水的质量比为1:99～5:95。A surface passivation solution comprises potassium persulfate and water, and the mass ratio of potassium persulfate to water is 1:99-5:95.
所述的表面钝化液用于室温辐射探测器晶体表面钝化的应用。The surface passivation liquid is used for the application of room temperature radiation detector crystal surface passivation.
所述的表面钝化液用于碲锰镉晶体表面钝化的应用。The surface passivation solution is used for surface passivation of cadmium manganese telluride crystals.
具体的应用，将碲锰镉晶体在质量百分含量为表面钝化液中表面处理1～20min。In a specific application, the cadmium telluride manganese crystal is surface-treated in a surface passivation solution with a mass percentage content of 1-20 minutes.
最好的，将碲锰镉晶体在质量百分含量为5％的表面钝化液中表面处理5min。Preferably, the cadmium manganese telluride crystal is surface-treated in a surface passivation solution with a mass percent content of 5% for 5 minutes.
最好的，将碲锰镉晶体在质量百分含量为1％的表面钝化液中表面处理20min。Preferably, the cadmium manganese telluride crystal is surface-treated in a surface passivation solution with a mass percent content of 1% for 20 minutes.
另外，所述的碲锰镉晶体为已用化学方法进行两面镀金电极的碲锰镉晶体。In addition, the cadmium manganese telluride crystal is the cadmium manganese telluride crystal whose electrodes have been plated with gold on both sides by chemical methods.
本发明与现有的方法相比，具有如下优点：Compared with existing methods, the present invention has the following advantages:
本发明的表面钝化液仅需一种钝化试剂，工艺简单且效果明显；无须加热或调节pH值，处理条件温和。电流-电压(I-V)测试结果表明该方法能显著降低器件的表面漏电流。对于钝化前后的CMT晶体，当外加偏压为100V时，采用本发明的钝化方法钝化后的CMT晶体表面的漏电流电流与钝化前的CMT晶体表面的电流相比最高减小了约一个数量级。本发明不仅适用于CMT晶体，也可用于碲化镉和碲锌镉晶体的表面钝化处理。The surface passivation solution of the present invention only needs one passivation reagent, the process is simple and the effect is obvious; there is no need to heat or adjust the pH value, and the treatment conditions are mild. The current-voltage (I-V) test results show that the method can significantly reduce the surface leakage current of the device. For the CMT crystal before and after passivation, when the applied bias voltage is 100V, the leakage current on the surface of the CMT crystal after passivation using the passivation method of the present invention is compared with the current on the surface of the CMT crystal before the passivation. about an order of magnitude. The invention is not only applicable to CMT crystals, but also can be used for surface passivation treatment of cadmium telluride and cadmium zinc telluride crystals.
附图说明Description of drawings
图1为实施例1中钝化前后CMT晶体的I-V测试结果；Fig. 1 is the I-V test result of CMT crystal before and after passivation in embodiment 1;
图2为实施例2中钝化前后CMT晶体的I-V测试结果；Fig. 2 is the I-V test result of CMT crystal before and after passivation in embodiment 2;
图3为不同钝化剂钝化前后CMT晶体的I-V测试结果比较；Figure 3 is a comparison of I-V test results of CMT crystals before and after passivation by different passivators;
以下结合说明书附图和具体实施方式对本发明做具体说明。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
具体实施方式detailed description
一种室温辐射探测器用CMT晶体表面钝化的方法，包括如下步骤：A method for passivating the surface of a room temperature radiation detector with a CMT crystal, comprising the steps of:
(1)钝化液的配制：称取一定量的过硫酸钾，倒入装有去离子水的烧杯中，室温磁力搅拌，使过硫酸钾全部溶解后得到浓度为1％～5％的钝化液，上述钝化液中过硫酸钾与去离子水的质量比为1:99～5:95；(1) Preparation of passivation solution: Weigh a certain amount of potassium persulfate, pour it into a beaker equipped with deionized water, and stir magnetically at room temperature to obtain a passivation solution with a concentration of 1% to 5% after all potassium persulfate is dissolved. Chemical solution, the mass ratio of potassium persulfate and deionized water in the above-mentioned passivation solution is 1:99～5:95;
(2)表面钝化：把已用化学方法两面镀有金电极的CMT晶片(尺寸为10×10×2mm3)放入到上述过硫酸钾钝化液中进行表面处理，时间为1-20min；(2) Surface passivation: put the CMT wafer (size 10×10×2mm 3 ) that has been chemically plated with gold electrodes on both sides into the above-mentioned potassium persulfate passivation solution for surface treatment, and the time is 1-20min ;
(3)晶片的清洗与干燥：将完成钝化后的CMT晶片取出，放入去离子水中清洗2-3次以除去表面残留的各种离子，然后用氮气吹干，最后得到表面钝化的CMT晶片；(3) Cleaning and drying of the wafer: the CMT wafer after passivation is taken out, put into deionized water and cleaned for 2-3 times to remove various ions remaining on the surface, then blow dry with nitrogen, and finally obtain the surface passivated CMT chip;
其实，本发明的表面钝化液不仅限于CMT晶体的表面钝化，其他的如CZT晶体(碲锌镉晶体)等室温辐射探测器所用的晶体的表面钝化也可采用本发明中的表面钝化液。In fact, the surface passivation solution of the present invention is not limited to the surface passivation of CMT crystals, the surface passivation of other crystals used in room temperature radiation detectors such as CZT crystals (cadmium zinc telluride crystals) can also use the surface passivation of the present invention. Liquid.
下面结合具体实施例来对本发明进一步说明。The present invention will be further described below in conjunction with specific embodiments.
实施例1：Example 1:
配制钝化液的烧杯用去离子水清洗干净，按过硫酸钾与去离子水的质量比为5:95的比例，称取5g过硫酸钾，倒入装有95g去离子水的烧杯中，室温磁力搅拌，使过硫酸钾全部溶解，得到浓度为5％的钝化液。把已用化学方法两面镀有金电极的CMT晶片(尺寸为10×10×2mm3)放入到上述所配制钝化液中进行表面钝化处理，时间为1min、2min和5min；将完成钝化后的CMT晶片取出，放入去离子水中清洗3次以除去表面残留的各种离子，然后晶片用氮气吹干，最后得到表面钝化的CMT晶片。Prepare the beaker of passivation solution clean with deionized water, be the ratio of 5:95 by the mass ratio of potassium persulfate and deionized water, take by weighing 5g potassium persulfate, pour in the beaker that 95g deionized water is housed, Stir magnetically at room temperature to dissolve all the potassium persulfate to obtain a passivation solution with a concentration of 5%. Put the CMT wafer (size 10×10×2mm 3 ) that has been chemically plated with gold electrodes on both sides into the passivation solution prepared above for surface passivation treatment, the time is 1min, 2min and 5min; the passivation will be completed The deionized CMT wafer was taken out, put into deionized water and cleaned 3 times to remove various ions remaining on the surface, and then the wafer was blown dry with nitrogen gas to finally obtain a surface-passivated CMT wafer.
实施例2：Example 2:
配制钝化液的烧杯用去离子水清洗干净，按过硫酸钾与去离子水的质量比为1:99的比例，称取1g过硫酸钾，倒入装有99g去离子水的烧杯中，室温磁力搅拌，使过硫酸钾全部溶解，得到浓度为1％的钝化液。把已用化学方法两面镀有金电极的CMT晶片(尺寸为10×10×2mm3)放入到上述所配制钝化液中进行表面钝化处理，时间为5min、10min和20min；将完成钝化后的CMT晶片取出，放入去离子水中清洗3次以除去表面残留的各种离子，然后晶片用氮气吹干，最后得到表面钝化的CMT晶片。Prepare the beaker of passivation solution and clean it with deionized water, be the ratio of 1:99 by the mass ratio of potassium persulfate and deionized water, take by weighing 1g potassium persulfate, pour in the beaker that 99g deionized water is housed, Stir magnetically at room temperature to dissolve all the potassium persulfate to obtain a passivation solution with a concentration of 1%. Put the CMT wafer (size 10×10×2mm 3 ) that has been chemically plated with gold electrodes on both sides into the passivation solution prepared above for surface passivation treatment, the time is 5min, 10min and 20min; the passivation will be completed The deionized CMT wafer was taken out, put into deionized water and cleaned 3 times to remove various ions remaining on the surface, and then the wafer was blown dry with nitrogen gas to finally obtain a surface-passivated CMT wafer.
将上述钝化处理后的CMT晶片制成探测器，采用Agilent公司半导体参数分析仪对上述钝化前和钝化后的CMT晶片的表面分别进行I-V测试，测试结果如图1和2所示。由图1和2可见，当外加偏压为100V时，对比未钝化和钝化后的CMT晶片表面的漏电流，发现5％过硫酸钾钝化1min后和1％过硫酸钾钝化5min后相对于钝化前表面电流分别减小了约60％和50％，这说明钝化效果显著。随着钝化时间延长，CMT晶片表面的漏电流的逐渐减小，钝化后相对于钝化前表面电流最高减小了约一个数量级，即5％过硫酸钾钝化5min和1％过硫酸钾钝化20min就能达到最好的钝化效果。测试分析还发现，晶片表面形成了一层附着力强的氧化层，表面平整。探测器能量分辨率显著提高，加1000V偏压仍然能够正常工作。The above-mentioned passivated CMT wafer was made into a detector, and the surface of the above-mentioned CMT wafer before passivation and after passivation was respectively subjected to I-V testing by using a semiconductor parameter analyzer of Agilent Company. The test results are shown in Figures 1 and 2. As can be seen from Figures 1 and 2, when the applied bias voltage is 100V, the leakage current on the surface of the CMT wafer without passivation and passivation is compared, and it is found that 5% potassium persulfate passivated for 1min and 1% potassium persulfate passivated for 5min Compared with before passivation, the surface current decreases by about 60% and 50%, respectively, which shows that the passivation effect is remarkable. As the passivation time prolongs, the leakage current on the surface of the CMT wafer gradually decreases, and the surface current after passivation decreases by about an order of magnitude, that is, 5% potassium persulfate passivation for 5 minutes and 1% persulfate Potassium passivation for 20 minutes can achieve the best passivation effect. The test analysis also found that a layer of oxide layer with strong adhesion was formed on the surface of the wafer, and the surface was smooth. The energy resolution of the detector is significantly improved, and it can still work normally with a bias voltage of 1000V.
此外，发明人还进行了在相同配置方法(参考实施例1)情况下，实施例1中的钝化液与双氧水和硫化铵的钝化效果进行比较的试验，通过图3可知，相同浓度的不同钝化剂在相同时间内，钝化效果最佳的为过硫酸钾。因此，本发明是一种效果显著的钝化方法，具有广泛的应用前景。In addition, the inventor has also carried out under the same configuration method (referring to Example 1) the test that the passivation effect of the passivation solution in Example 1 is compared with hydrogen peroxide and ammonium sulfide, as can be seen from Figure 3, the same concentration Among the different passivators at the same time, potassium persulfate has the best passivation effect. Therefore, the present invention is a passivation method with remarkable effect and has wide application prospects.
以上所述实例仅用于说明本发明但并不限制本发明，本领域技术人员对本发明的方法所作的修改和改进，均应视为在本发明权利要求书确定的保护范围之内。The above examples are only used to illustrate the present invention but do not limit the present invention. The modifications and improvements made by those skilled in the art to the method of the present invention should be considered within the scope of protection determined by the claims of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710414294.6A CN107393820B (en) | 2017-06-05 | 2017-06-05 | surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710414294.6A CN107393820B (en) | 2017-06-05 | 2017-06-05 | surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107393820A true CN107393820A (en) | 2017-11-24 |
| CN107393820B CN107393820B (en) | 2019-12-13 |
Family
ID=60332973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710414294.6A Expired - Fee Related CN107393820B (en) | 2017-06-05 | 2017-06-05 | surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393820B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101525748A (en) * | 2009-04-17 | 2009-09-09 | 昆明理工大学 | Clean rare-earth salt passive film |
| CN101525747A (en) * | 2009-04-17 | 2009-09-09 | 昆明理工大学 | Clean rare-earth salt passivation solution |
| CN102856432A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Surface passivation method of silicon chip |
| CN103205742A (en) * | 2013-04-09 | 2013-07-17 | 海宁市科泰克金属表面技术有限公司 | Chromate-free passivator for zinc coating |
| CN103861740A (en) * | 2014-03-25 | 2014-06-18 | 中南大学 | Method for flotation separation of copper sulfide and lead concentrate processed through pre-oxidation |
| CN104795321A (en) * | 2015-03-02 | 2015-07-22 | 京东方科技集团股份有限公司 | Method for overcoming surface defect of polycrystalline silicon |
-
2017
- 2017-06-05 CN CN201710414294.6A patent/CN107393820B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101525748A (en) * | 2009-04-17 | 2009-09-09 | 昆明理工大学 | Clean rare-earth salt passive film |
| CN101525747A (en) * | 2009-04-17 | 2009-09-09 | 昆明理工大学 | Clean rare-earth salt passivation solution |
| CN102856432A (en) * | 2012-08-12 | 2013-01-02 | 安阳市凤凰光伏科技有限公司 | Surface passivation method of silicon chip |
| CN103205742A (en) * | 2013-04-09 | 2013-07-17 | 海宁市科泰克金属表面技术有限公司 | Chromate-free passivator for zinc coating |
| CN103861740A (en) * | 2014-03-25 | 2014-06-18 | 中南大学 | Method for flotation separation of copper sulfide and lead concentrate processed through pre-oxidation |
| CN104795321A (en) * | 2015-03-02 | 2015-07-22 | 京东方科技集团股份有限公司 | Method for overcoming surface defect of polycrystalline silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107393820B (en) | 2019-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | Self-powered ultraviolet photovoltaic photodetector based on graphene/ZnO heterostructure | |
| CN107123698A (en) | CdZnTe planar detector surface treatment methods | |
| Han et al. | High-performance UV detectors based on room-temperature deposited amorphous Ga 2 O 3 thin films by RF magnetron sputtering | |
| JP5659632B2 (en) | Boron-doped p-type silicon wafer iron concentration analysis method and analyzer, silicon wafer, and silicon wafer manufacturing method | |
| US10371658B2 (en) | Gas sensor and sensor apparatus | |
| Han et al. | Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene: N/βGa2O3: N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method | |
| Özerli et al. | The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs | |
| CN100485975C (en) | Coplanar gate anode tellurium-zinc-cadmium detector with capacitor gate and method for making same | |
| Lu et al. | Hole selective WOx and V2Ox contacts using solution process for silicon solar cells application | |
| Liu et al. | Self-powered gas sensor based on SiNWs/ITO photodiode | |
| Anttila et al. | Metal contamination removal on silicon wafers using dilute acidic solutions | |
| Bai et al. | InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability | |
| CN106680687A (en) | Precise measuring method of crystalline silicon body lifetime | |
| CN107393820B (en) | surface passivation solution and application thereof in surface passivation of cadmium manganese telluride crystals | |
| Luan et al. | Preparation and properties of hemispherical CdMnTe nuclear radiation detectors | |
| Ma et al. | Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si | |
| JP2776583B2 (en) | Semiconductor substrate processing solution and processing method | |
| Ruan et al. | Rectifying performance of p-type tin (II) sulfide contacts on n-type silicon: Effect of silicon nanowire sulfidation on electronic transport of heterojunction diodes | |
| CN114551646A (en) | Method for preparing high-performance solar blind detector by utilizing in-plane anisotropy of beta-phase gallium oxide crystal (100) | |
| CN109461668B (en) | Test method for contact resistivity between gold electrodes and cadmium zinc telluride wafers | |
| JP2981712B2 (en) | Manufacturing method of semiconductor radiation detector | |
| Saha et al. | Comparative investigation of Ga-and Sn-doped ZnO nanowires/p-Si heterojunctions for UV-photo sensing | |
| CN117144480A (en) | A method for surface treatment of cadmium zinc telluride crystal for nuclear radiation detectors | |
| Gal et al. | Band diagram and band line‐up of the polycrystalline CdS/Cu (In, Ga) Se2 heterojunction and its response to air annealing | |
| Naik et al. | Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191213 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |