CN107345294A - A kind of air intake structure of plasma apparatus - Google Patents
A kind of air intake structure of plasma apparatus Download PDFInfo
- Publication number
- CN107345294A CN107345294A CN201710615451.XA CN201710615451A CN107345294A CN 107345294 A CN107345294 A CN 107345294A CN 201710615451 A CN201710615451 A CN 201710615451A CN 107345294 A CN107345294 A CN 107345294A
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- air inlet
- gas
- inlet group
- source
- air
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- 238000004891 communication Methods 0.000 claims abstract description 8
- 238000005259 measurement Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 52
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005273 aeration Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of air intake structure of plasma apparatus, including vacuum chamber, the top or bottom of the vacuum chamber are connected with plasma source, and the bottom or top of the vacuum chamber are provided with the workbench for being used for placing workpiece；The vacuum chamber is circumferentially with the first air inlet group and the second air inlet group, and the first air inlet group has the first source of the gas by pipeline communication, and the second air inlet group has the second source of the gas by pipeline communication；The first air inlet group and the second air inlet group include at least three air inlets, and the air inlet is in perpendicular towards different directions.Invention increases the flexibility of intake method, more convenient etching or film forming for substrate requires adjustment intake method.
Description
Technical field
The present invention relates to plasma etching, deposition apparatus technical field, more particularly to a kind of entering for plasma apparatus
Depressed structure.
Background technology
Plasma enhanced chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition,
Abbreviation PECVD) it is to make the gas containing film composed atom by microwave or radio frequency etc., plasma is being partially formed, and wait
Gas ions chemism is very strong, it is easy to reacts, can go out desired film in deposition on substrate.
Reactive ion etching (Reactive Ions Etch, abbreviation RIE) is to make by microwave or radio frequency etc. containing etching
The gas of particle, plasma is being partially formed, and plasma chemistry activity is very strong, it is easy to react, final etching
Fall the material on partial substrate.
Conventional plasma etching or film-forming apparatus includes two air admission holes, and two air admission holes are respectively used to vacuum chamber
Reacting gas is inside passed through, but because the outgassing direction of air admission hole is fixed so that two kinds of reacting gas can only be with fixed mixing side
Formula air inlet, the adjustment to substrate etching or filming performance can not be realized.And the pressure and flow gradients of air admission hole and vacuum chamber compared with
Greatly, after radio frequency loading, the plasma uniformity consistency that starter obtains is difficult to ensure that.
The content of the invention
It is an object of the invention to provide a kind of air intake structure of plasma apparatus, to solve existing for above-mentioned prior art
Problem, having reacting gas, a variety of intake methods are available, with facilitate adjustment plasma substrate is performed etching or into
The performance of film.
To achieve the above object, the invention provides following scheme：
The invention provides a kind of air intake structure of plasma apparatus, including vacuum chamber, the top of the vacuum chamber or
Bottom is connected with plasma source, and the bottom or top of the vacuum chamber are provided with the workbench for being used for placing workpiece；The vacuum
Room is circumferentially with the first air inlet group and the second air inlet group, and the first air inlet group has the first source of the gas by pipeline communication, described
Second air inlet group has the second source of the gas by pipeline communication；The first air inlet group and the second air inlet group include at least three
Air inlet, the air inlet is in perpendicular towards different directions.
Preferably, the first air inlet group and the second air inlet group include three air inlets, enter described in three
Gas port is respectively facing tiltedly upper 30 °~60 °, horizontal and tiltedly lower 30 °~60 ° settings.
Preferably, three air inlets are respectively facing tiltedly upper 45 °, horizontal and tiltedly lower 45 ° of settings.
Preferably, the first air inlet group is relative with the second air inlet group or sets in the same direction.
Preferably, the first air inlet group and the angle of the second air inlet group in the horizontal plane are 30 °~150 °.
Preferably, an even gas cap is equipped with each air inlet, the even gas cap, which is gone into battle, shows several even stomatas.
Preferably, it is sequentially provided with each pipeline between the air inlet and first source of the gas or second source of the gas
One switch valve, a combiner valve is provided between first source of the gas or second source of the gas and the switch valve.
Preferably, the switch valve is electrically operated valve, and all electrically operated valves are controlled by a controller and opened and closed, described
The program for controlling the electrically operated valve to open and close is preset with controller.
Preferably, the thickness measurement sensor of the internal vacuum chamber, the thickness measurement sensor and the control are arranged in addition to
Device electrical connection processed, the controller can control the electrically operated valve respectively according to the detection data that the thickness measurement sensor feeds back
Keying.
Preferably, the thickness measurement sensor is laser caliper sensors or crystal oscillator thickness measurement sensor.
The present invention achieves following technique effect relative to prior art：The present invention by the surrounding of vacuum chamber set into
Gas group, and air inlet group is arranged at least three air inlets, the first source of the gas and the second source of the gas is had multigroup air inlet side
Case is available, adds the flexibility of intake method, be easy to more to facilitate etching or the film forming requirement for substrate adjust into
Gas mode.The even gas cap set on air inlet, the air-flow of gas can be made more dispersed, make two kinds of gases be easier to mix, increase
The uniformity of plasma, improve etching or the uniformity of filming performance.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing needed to use is briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the schematic diagram of the air intake structure of plasma apparatus of the present invention；
Wherein：1- vacuum chambers, 2- plasma sources, 3- workbench, 4- the first air inlet groups, 5- the second air inlet groups, 6- first
Source of the gas, the sources of the gas of 7- second, 8- air inlets, the even gas caps of 9-, 10- switch valves, 11- combiner valves, 12- controllers, 13- thickness measurings sensing
Device.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
It is an object of the invention to provide a kind of air intake structure of plasma apparatus, to solve existing for above-mentioned prior art
Problem, having reacting gas, a variety of intake methods are available, with facilitate adjustment plasma substrate is performed etching or into
The performance of film.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
As shown in Figure 1：Present embodiments provide a kind of air intake structure of plasma apparatus, including vacuum chamber 1, vacuum chamber
1 is used to provide reaction compartment to reacting gas and substrate.Vacuum chamber 1 need to be connected with vavuum pump, for abstraction reaction gas and instead
The intermediate product answered, the air pressure in vacuum chamber 1 are preferably no greater than 50Pa.The top of vacuum chamber 1 is connected with plasma source 2, etc.
Plasma source 2 is used to make reacting gas be ionized into plasma, to improve the chemical property of reacting gas.Plasma source 2
It is preferred that using radio frequency source, rf frequency is preferably 13.5MHz.The bottom of vacuum chamber 1 is provided with the workbench 3 for being used for placing workpiece,
Workbench 3 preferably uses rotatable turntable.
The left side of vacuum chamber 1 is provided with the first air inlet group 4, and the right side of vacuum chamber 1 is provided with the second air inlet group 5, the first air inlet group 4
It is oppositely arranged with the second air inlet group 5, two kinds of gases is interlocked, it is more uniform to mix.First air inlet group 4 and the second air inlet group
5 include three air inlets 8, three air inlets 8 be respectively facing oblique upper 30 °~60 ° (angles with horizontal plane), it is horizontal and tiltedly under
30 °~60 ° (angle with horizontal plane) is set.Three air inlets 8 are preferably respectively facing tiltedly upper 45 °, horizontal and oblique lower 45 ° set
Put.An even gas cap 9 is equipped with each air inlet 8, even gas cap 9, which is gone into battle, shows several even stomatas, so that the gas passed through point
Cloth is more uniform.
First air inlet group 4 has the first source of the gas 6 by pipeline communication, and the second air inlet group 5 has the second source of the gas by pipeline communication
7.First source of the gas 6 and the second source of the gas 7 are respectively used to provide reacting gas into vacuum chamber 1.Each source of the gas 6 of air inlet 8 and first
Or a switch valve 10 is sequentially provided with the second pipeline between source of the gas 7, switch valve 10 is preferably electrically operated valve, the first source of the gas 6 or
A combiner valve 11 is provided between second source of the gas 7 and switch valve 10, combiner valve 11 is preferably four-way valve.
All electrically operated valves are controlled by a controller 12 and opened and closed, and all electrically operated valves of control are preset with controller 12 and are opened
The program closed, and/or, the inside of vacuum chamber 1 is provided with thickness measurement sensor 13, and thickness measurement sensor 13 is preferably laser caliper sensors
Or crystal oscillator thickness measurement sensor, thickness measurement sensor 13 electrically connect with controller 12, controller 12 can be anti-according to thickness measurement sensor 13
The testing number of feedback is according to the keying for controlling electrically operated valve respectively in real time, to adjust film forming or etching process in time.
The open and-shut mode of three switch valves 10 in the air inlet group 5 of three switch valves 10 and second in first air inlet group 4 can
Any collocation, can change the ratio of two kinds of gas, realize that a variety of air inlet schemes are available.Such as first air inlet group 4 upper number
First and second switch valve 10 are opened, and first switch valve 10 of upper number of the second air inlet group 5 is opened, then, all
In the case that air inlet 8 is equal in magnitude, the aeration ratio of the first source of the gas 6 and the second source of the gas 7 is then 2:1.Similarly, the present invention can be real
The first existing source of the gas 6 and the aeration ratio of the second source of the gas 7 include 1:3,1:2,1:1,2:3,2:2,2:1,3:1,3:2 and 3:3.No
Only in this way, even same aeration ratio, such as the aeration ratio of the first source of the gas 6 and the second source of the gas 7 are 1:3, the present embodiment is also
Which air inlet 8 of the first air inlet group 4 can be opened by selection, further to adjust the admixture of two kinds of gas, to adjust
The effect of whole final etching or film forming.Therefore, the present embodiment is available comprising 49 kinds of air inlet schemes altogether, drastically increases
The flexibility of intake method.
It should be noted that：Plasma source 2 can be arranged on the top or bottom of vacuum chamber 1, with the phase of plasma source 2
Instead, workbench 3 can be arranged on the bottom or top of vacuum chamber 1.The top of vacuum chamber 1 can also set electrode, and make work
Make platform 3 and connect plasma source 2.Specific set-up mode can be depending on the type and requirement of plasma etching or film forming.
First air inlet group 4 and the second air inlet group 5 are not limited to be oppositely arranged, and can also be arranged on the same side of vacuum chamber 1, or set respectively
Put on the adjacent side of vacuum chamber 1, make that shape between the first air inlet group 4 and the second air inlet group 5 is at a certain angle, and angle can be
Arbitrary value in 30 °~150 °.And the quantity of the air inlet 8 of the first air inlet group 4 and the second air inlet group 5 is not limited to three,
It is every to be no less than three adjustment that can be achieved to the first source of the gas 6 and the air inlet scheme of the second source of the gas 7, to realize having a variety of air inlet sides
Case is available.And specifically set several air inlets 8 can be depending on the requirement of plasma etching or the equipment of film forming.
Apply specific case in this specification to be set forth the principle and embodiment of the present invention, above example
Explanation be only intended to help understand the present invention method and its core concept；Meanwhile for those of ordinary skill in the art,
According to the thought of the present invention, in specific embodiments and applications there will be changes.In summary, in this specification
Appearance should not be construed as limiting the invention.
Claims (10)
- A kind of 1. air intake structure of plasma apparatus, it is characterised in that：Including vacuum chamber, the top or bottom of the vacuum chamber Plasma source is connected with, the bottom or top of the vacuum chamber are provided with the workbench for being used for placing workpiece；The vacuum chamber It is circumferentially with the first air inlet group and the second air inlet group, the first air inlet group has the first source of the gas by pipeline communication, and described second Air inlet group has the second source of the gas by pipeline communication；The first air inlet group and the second air inlet group include at least three air inlets Mouthful, the air inlet is in perpendicular towards different directions.
- 2. the air intake structure of plasma apparatus according to claim 1, it is characterised in that：The first air inlet group and institute Stating the second air inlet group includes three air inlets, and three air inlets are respectively facing oblique upper 30 °~60 °, horizontal and oblique Lower 30 °~60 ° settings.
- 3. the air intake structure of plasma apparatus according to claim 2, it is characterised in that：Three air inlet difference Towards tiltedly upper 45 °, horizontal and tiltedly lower 45 ° of settings.
- 4. the air intake structure of plasma apparatus according to claim 1, it is characterised in that：The first air inlet group and institute The second air inlet group is stated to set relatively or in the same direction.
- 5. the air intake structure of plasma apparatus according to claim 1, it is characterised in that：The first air inlet group and institute It is 30 °~150 ° to state the angle of the second air inlet group in the horizontal plane.
- 6. the air intake structure of plasma apparatus according to claim 1, it is characterised in that：On each air inlet Provided with an even gas cap, the even gas cap, which is gone into battle, shows several even stomatas.
- 7. the air intake structure of plasma apparatus according to claim 1, it is characterised in that：Each air inlet and institute State and a switch valve is sequentially provided with the pipeline between the first source of the gas or second source of the gas, first source of the gas or second gas A combiner valve is provided between source and the switch valve.
- 8. the air intake structure of plasma apparatus according to claim 7, it is characterised in that：The switch valve is motor-driven valve Door, all electrically operated valves are controlled by a controller and opened and closed, and the control electrically operated valve is preset with the controller and is opened The program closed.
- 9. the air intake structure of plasma apparatus according to claim 8, it is characterised in that：It is also described true including being arranged on Thickness measurement sensor inside empty room, the thickness measurement sensor electrically connect with the controller, and the controller can be according to described The detection data of thickness measurement sensor feedback control the keying of the electrically operated valve respectively.
- 10. the air intake structure of plasma apparatus according to claim 9, it is characterised in that：The thickness measurement sensor is Laser caliper sensors or crystal oscillator thickness measurement sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615451.XA CN107345294A (en) | 2017-07-26 | 2017-07-26 | A kind of air intake structure of plasma apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710615451.XA CN107345294A (en) | 2017-07-26 | 2017-07-26 | A kind of air intake structure of plasma apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107345294A true CN107345294A (en) | 2017-11-14 |
Family
ID=60257119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710615451.XA Pending CN107345294A (en) | 2017-07-26 | 2017-07-26 | A kind of air intake structure of plasma apparatus |
Country Status (1)
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| CN (1) | CN107345294A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767545A (en) * | 2019-10-17 | 2020-02-07 | 上海华力集成电路制造有限公司 | Silicon wafer etching method |
| CN112899637A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | Air inlet system of coating device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| KR20120029797A (en) * | 2010-09-17 | 2012-03-27 | 주식회사 원익아이피에스 | Thin film deposition apparatus |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业系统株式会社 | Film formation device |
-
2017
- 2017-07-26 CN CN201710615451.XA patent/CN107345294A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
| KR20120029797A (en) * | 2010-09-17 | 2012-03-27 | 주식회사 원익아이피에스 | Thin film deposition apparatus |
| CN103314134A (en) * | 2011-03-15 | 2013-09-18 | 东芝三菱电机产业系统株式会社 | Film formation device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767545A (en) * | 2019-10-17 | 2020-02-07 | 上海华力集成电路制造有限公司 | Silicon wafer etching method |
| CN112899637A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | Air inlet system of coating device |
| CN112899637B (en) * | 2019-12-04 | 2023-03-31 | 江苏菲沃泰纳米科技股份有限公司 | Air inlet system of film coating device |
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Application publication date: 20171114 |
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