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CN107340082A - A kind of flexible film pressure sensor - Google Patents

A kind of flexible film pressure sensor Download PDF

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Publication number
CN107340082A
CN107340082A CN201710528899.8A CN201710528899A CN107340082A CN 107340082 A CN107340082 A CN 107340082A CN 201710528899 A CN201710528899 A CN 201710528899A CN 107340082 A CN107340082 A CN 107340082A
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CN
China
Prior art keywords
layer
flexible substrate
varistor
pressure sensor
varistor layer
Prior art date
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Pending
Application number
CN201710528899.8A
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Chinese (zh)
Inventor
熊作平
张珽
谷文
井华
王冉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Neng Sida Electronic Science And Technology Co Ltd
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Suzhou Neng Sida Electronic Science And Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Suzhou Neng Sida Electronic Science And Technology Co Ltd filed Critical Suzhou Neng Sida Electronic Science And Technology Co Ltd
Priority to CN201710528899.8A priority Critical patent/CN107340082A/en
Publication of CN107340082A publication Critical patent/CN107340082A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)

Abstract

The present invention relates to a kind of design of pressure sensor, specially a kind of flexible film pressure sensor can further improve transducer sensitivity by the synergy that the change in resistance of novel nano pressure sensitive and two varistor layer contacts area change, it is aided with the ultrathin film substrate of suitable Young's modulus again so as to solve hesitation, the problem of test repeatability difference, including the first flexible substrate, first electrode layer, first varistor layer, supporting layer, second flexible substrate, the second electrode lay and the second varistor layer, first varistor layer, first electrode layer and the first flexible substrate are sequentially connected, second varistor layer, the second electrode lay and the second flexible substrate are sequentially connected;Also include supporting layer, the supporting layer is fixed between the first flexible substrate and the second flexible substrate and by the first varistor layer and the second varistor layer, gap be present between first varistor layer and the second varistor layer.

Description

A kind of flexible film pressure sensor
Technical field
The present invention relates to a kind of design of pressure sensor, specially a kind of flexible film pressure sensor.
Background technology
In recent years, because diaphragm pressure sensor stability is good, small volume, high reliability, therefore in industry On be widely used.Diaphragm pressure sensor is generally considered to be a kind of ultra-thin multilayer electromechanical assembly, wherein sensing Arrangement electrode and connecting line, and done using suitable thin polymer film and epoxide resin material in order on element and its lamination The ultrathin packaging structure firm into one.When diaphragm pressure sensor by unexpected contact force or lasting change pressure, When pulling force, velocity field, electric signal can be produced, for exporting the corresponding control and operation for indicating and/or actuating machine.
In general, diaphragm pressure sensor includes four kinds of typical cases, i.e. electric switch, surge, strain and object The measurement of speed.Based on above-mentioned typical case, thin film sensor can be divided into four classes, i.e. switch, pressure gauge, strain gauge, electromagnetism speed Degree meter.It is also well known that the operation principle of four type thin film sensors is dependent on four kinds of different physics effects above in this area Should.Respectively:Electrical contact (switch) suddenly;Resistance under pressure (pressure drag) or strain (resistance) effect gradually changes;Pressure Electric charge under (piezoelectricity) or strain (electricity) effect gradually discharges;When conductor motion is into magnetic field, produced around conductor Electromotive force (electromotive force speed effect).In addition, those skilled in the art are seeking to enter diaphragm pressure sensor all the time One step is improved.For example, the applying date is on May 20th, 2003, the China of entitled " semiconductor pressure sensor of film type " Patent application 03123715.0 (publication number CN 1460846A, publication date on December 10th, 2003) discloses a kind of size reduction And sensitivity is not apparent from the semiconductor pressure sensor of reduction, it ensures the necessary sensitivity of sensor while cost is reduced And reliability.
With the hot development of wearable device, diaphragm pressure sensor can start to use in wearable device, so soft Diaphragm pressure sensor starts to obtain universal utilization, and the demand of pliable pressure detecting sensor is also increasingly increased.And by In the objective demand of flexibility, miniaturization, presently commercially available fexible film pressure sensor is caused to be primarily present range small, sluggish Effect is obvious, the problems such as difference occurs in test repeatability in the short time.
The content of the invention
It is an object of the present invention to provide a kind of flexible film pressure sensor can pass through the electricity of novel nano pressure sensitive The synergy that resistance rate changes and two varistor layer contacts area change further improves transducer sensitivity, then is aided with suitable poplar The ultrathin film substrate of family name's modulus is so as to solving the problems, such as hesitation, test repeatability difference.
Technical scheme is used by invention solves its technical problem:A kind of flexible film pressure sensor, including first Flexible substrate, first electrode layer, the first varistor layer, supporting layer, the second flexible substrate, the second electrode lay and the second varistor layer, institute State the first varistor layer, first electrode layer and the first flexible substrate to be sequentially connected, second varistor layer, the second electrode lay and second Flexible substrate is sequentially connected;Also include supporting layer, the supporting layer between the first flexible substrate and the second flexible substrate and First varistor layer and the second varistor layer are fixed, gap be present between first varistor layer and the second varistor layer.
Preferably, the supporting layer is for flake and between the flexible substrate of position first and the second flexible substrate.
Preferably, the supporting layer is ring-shaped support, first varistor layer and the second varistor layer are respectively positioned at branch Support the top and bottom of layer.
Preferably, the supporting layer is bar and is located at the side of the first varistor layer and the second varistor layer.
Preferably, first flexible substrate and the second flexible substrate are by ethylene-vinyl acetate copolymer, polyethylene The materials such as alcohol, dimethyl silicone polymer, PET, polymethyl methacrylate, polyimides and polyethylene At least one of be made.
Preferably, first varistor layer and the second varistor layer are with the spongy of three-dimensional poroid micro-structural.
Preferably, first varistor layer and the second varistor layer are made up of nano combined pressure sensitive, the nanometer is answered Closing pressure sensitive includes conductive material, high polymer material, dispersion and auxiliary agent.
Preferably, 1 μm -500 μm of the thickness of first varistor layer and the second varistor layer.
Preferably, the second electrode lay also may be provided in the first flexible substrate, in addition to conductive layer, the conductive layer It is located in the second flexible substrate..
The beneficial effect of invention is:The invention provides a kind of ultra-thin flexible film pressure sensor, mainly including first Flexible substrate, first electrode layer, the first varistor layer, supporting layer, and the second flexible substrate, the second electrode lay, the second varistor layer; When the varistor layer in flexible substrate is pressurized, the resistivity of nanometer pressure sensitive produces change and two varistor layer contacts area change Cause resistance variations and realize the perception to pressure, after pressure is removed, the resistivity of nanometer pressure sensitive returns to originally again Value.The application is entered using the change in resistance of novel nano pressure sensitive and the synergy of two varistor layer contacts area change One step improve transducer sensitivity, then be aided with suitable Young's modulus ultrathin film substrate can substantially change hesitation, survey The problems such as test mass renaturation difference is big.The flexible film pressure sensor of the present invention uses novel nano pressure sensitive, high sensitivity And output linearity, accurately sensed pressure it can change, and the frivolous compact, small power consumption of sensor bulk, cost are low, are adapted to various Application demand under different occasions, there is stronger versatility.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment one of the flexible film pressure sensor of the present invention.
Fig. 2 is the structural representation of the embodiment two of the flexible film pressure sensor of the present invention.
Fig. 3 is the structural representation of the embodiment three of the flexible film pressure sensor of the present invention.
Fig. 4 is the structural representation of the array flexible film pressure sensor of the present invention.
Brief description of the drawings:1st, the first flexible substrate, 2, first electrode layer, the 3, first varistor layer, 4, supporting layer, 5, second is soft Substrate, 6, the second electrode lay, the 7, second varistor layer, 8, conductive layer.
Embodiment
Invention is described in further detail presently in connection with accompanying drawing.These accompanying drawings are simplified schematic diagram, only to show Meaning mode illustrates the basic structure of invention, therefore it only shows the composition relevant with invention.
As illustrated, a kind of flexible film pressure sensor, including the first flexible substrate 1, first electrode layer 2, first pressure Photosensitive layer 3, supporting layer 4, the second flexible substrate 5, the varistor layer 7 of the second electrode lay 6 and second, first varistor layer 3, first electrode The flexible substrate 1 of layer 2 and first is sequentially connected, and second varistor layer 7, the flexible substrate 5 of the second electrode lay 6 and second connect successively Connect;Also include supporting layer 4, the supporting layer 4 is between the first flexible substrate 1 and the second flexible substrate 5 and pressure-sensitive by first The varistor layer 7 of layer 3 and second is fixed, and gap be present between the varistor layer 7 of the first varistor layer 3 and second.
The supporting layer 4 is for flake and between position the first flexible substrate 1 and the second flexible substrate 5.
The supporting layer 4 is ring-shaped support, and the varistor layer 7 of the first varistor layer 3 and second is respectively positioned at supporting layer 4 Top and bottom.
The supporting layer 4 is bar and is located at the side of the first varistor layer 3 and the second varistor layer 7.
The flexible substrate 5 of first flexible substrate 1 and second is by ethylene-vinyl acetate copolymer, polyvinyl alcohol, poly- diformazan At least one in the materials such as radical siloxane, PET, polymethyl methacrylate, polyimides and polyethylene Kind is made.
The varistor layer 7 of first varistor layer 3 and second is with the spongy of three-dimensional poroid micro-structural.
The varistor layer 7 of first varistor layer 3 and second is made up of nano combined pressure sensitive, the nano combined pressure-sensitive material Material includes conductive material, high polymer material, dispersion and auxiliary agent.
1 μm -500 μm of the thickness of the varistor layer 7 of first varistor layer 3 and second.
The second electrode lay 6 also be may be provided in the first flexible substrate 1, in addition to conductive layer 8, and the conductive layer 8 is located at In second flexible substrate 5.
First flexible substrate and the second flexible substrate can select different-thickness (1 μm -500 according to concrete application demand μm), different hardness (such as 2H, 4H), different light transmittances (may be selected all-transparent, it is translucent or opaque in one kind) it is soft thin Film, it is selected from, but not limited to, ethylene-vinyl acetate copolymer, polyvinyl alcohol, dimethyl silicone polymer, poly terephthalic acid second two The one or more combination of the materials such as ester, polymethyl methacrylate, polyimides and polyethylene uses.
The electrode layer is located in flexible substrate and area is less than Substrate Area, can be by etching or printing with patterning The electrode layer and electrode layer of brush technology controllable preparation different pattern and substrate strong bonded.
The varistor layer (can make all-transparent, it is translucent or opaque in one kind) cover positioned at electrode layer surface and completely Lid electrode layer, 1 μm -500 μm of varistor layer thickness, varistor layer has three-dimensional poroid micro-structural, and the size of micro-structural can be adjusted Section., can be wider to the range of linearity of varistor layer deformation based on the poroid micro-structural ambient pressure of the three-dimensional compared with traditional pressure sensitive material, The range of linearity of flexible film pressure sensor change in electric can be bigger, has greatly widened sensor detection range.It is pressure-sensitive Layer is to be formed using nano combined pressure sensitives such as CNTs by printing, spin coating technique film forming solidify afterwards, nano combined pressure Quick material includes conductive material (such as carbon nanomaterial, nano-metal particle, metal oxide, organic conductive polymer), height (such as phenolic resin, polyacrylic resin, polyester resin, polyamide, dimethyl silicone polymer, unsaturation are poly- for molecular material One or more in ester resin, epoxy resin, organic siliconresin, polyimides, rubber, ethylene-vinyl acetate copolymer etc. Mix in proportion), dispersion, auxiliary agent etc..Such as the present invention uses chemical treatment carbon Guan Laizeng when using CNT Its strong piezoresistive effect is further to improve device sensitivity.
In the specific implementation, embodiment one:As shown in figure 1, supporting layer be positioned at flexible substrate surface and first or The side (such as above, below, the left side or the right) of second varistor layer, had both fixed the first varistor layer and the second varistor layer ensure that device The stability of part, make to form a fixed gap between the first varistor layer and the second varistor layer again, the space can pass through supporting layer thickness And varistor layer thickness is adjusted.Supporting layer can be sticking thermoplastic, PUR, UV glue, double faced adhesive tape, epoxy glue, optics Glue etc., 1 μm -5000 μm of width, 1 μm -500 μm of thickness.
Embodiment two:As shown in Fig. 2 including the first flexible substrate, first electrode layer, the first varistor layer, supporting layer, with And second flexible substrate, the second electrode lay.First electrode layer is located at the first flexible substrate surface and is in close contact with substrate, first Varistor layer is covered in first electrode layer surface and is in close contact with electrode layer;Supporting layer is located at the first pressure-sensitive layer surface or support Layer positioned at flexible substrate surface and be looped around around the first varistor layer or supporting layer be located at flexible substrate surface and first press The side of photosensitive layer;The second electrode lay is located at the second flexible substrate surface and is in close contact with substrate.
Embodiment three:As shown in figure 3, mainly include the first flexible substrate, first electrode layer, and the second soft lining Bottom, the second conductive layer, the second varistor layer, supporting layer.First electrode layer is located at the first flexible substrate surface and closely connect with substrate Touch, the second conductive layer is located at the second flexible substrate surface and is in close contact with substrate, and the second varistor layer is covered in the second conductive layer Surface and with conductive layer be in close contact;Supporting layer is located at the second pressure-sensitive layer surface or supporting layer is located at the second flexible substrate surface And it is looped around around the second varistor layer or supporting layer is located at the second flexible substrate surface and in the side of the second varistor layer.Second The same first electrode layer of conductive, flexible substrate, electrode layer, varistor layer, the material of supporting layer are soft thin with the first single-point Membrane pressure sensor.
The present invention is also based on above-mentioned single-point flexible film pressure sensor and forms array flexible film pressure sensing Device.The array flexible film pressure sensor comprises at least an electrod-array, and the electrod-array can be soft at one Property substrate surface prepare multiple independent electrodes mutually, multiple mutual independent electrodes are prepared on another flexible substrate surface, The mutual independent electrode in two flexible substrate surfaces is mutually assembled by supporting layer every sky;Can also be in a flexible substrate table Face prepares common electrode layer, and multiple mutual independent electrodes, multiple mutual independent electricity are prepared on another flexible substrate surface Pole is mutually assembled to form sensor array with common electrode layer by supporting layer every sky.This array flexible film pressure sensor In each single-point type ultrathin film pressure sensor can independent acquisition pressure data, it is achieved thereby that gathering multiple spot simultaneously The technique effect of pressure data.
The invention provides the first array flexible film pressure sensor (as shown in a in Fig. 4), by one or more The unit to work independently of one another --- the arrangement of single-point type ultrathin film pressure sensor forms.
The invention provides second of array flexible film pressure sensor (as shown in b1 in Fig. 4 and b2), at one Flexible substrate surface prepares common electrode layer, and multiple mutual independent electrodes, common electrical are prepared on another flexible substrate surface Pole layer and multiple mutual independent electrode surfaces are all covered with varistor layer, and multiple mutual independent electrodes pass through with common electrode layer Supporting layer mutually forms sensor array every sky assembling.
The invention provides the third array flexible film pressure sensor (as shown in c1 in Fig. 4 and c2), at one Flexible substrate surface prepares multiple mutual independent electrodes, and multiple mutual independent electricity are prepared on another flexible substrate surface Pole, and multiple mutual independent electrode surfaces are all covered with varistor layer, two flexible substrate surfaces in one of flexible substrate Independent electrode is mutually assembled by supporting layer every sky mutually.
The invention provides the 4th kind of array flexible film pressure sensor (as shown in d1 in Fig. 4 and d2), at one Flexible substrate surface prepares multiple electrode pairs independently arranged mutually and forms array electrode layer, in another flexible substrate surface system The array varistor layer of the array varistor layer of standby corresponding distribution, array electrode layer and corresponding distribution is by supporting layer mutually every sky Assembling.
It is complete by above-mentioned description, relevant staff using the above-mentioned desirable embodiment according to invention as enlightenment Can without departing from the scope of the technological thought of the present invention', carry out various changes and amendments, this invention it is technical Scope is not limited to the content on specification, it is necessary to determines its technical scope according to right.

Claims (9)

  1. A kind of 1. flexible film pressure sensor, it is characterised in that:Including the first flexible substrate (1), first electrode layer (2), One varistor layer (3), supporting layer (4), the second flexible substrate (5), the second electrode lay (6) and the second varistor layer (7), first pressure Photosensitive layer (3), first electrode layer (2) and the first flexible substrate (1) are sequentially connected, second varistor layer (7), the second electrode lay (6) it is sequentially connected with the second flexible substrate (5);Also include supporting layer (4), the supporting layer (4) is located at the first flexible substrate (1) And second is between flexible substrate (5) and fixed by the first varistor layer (3) and the second varistor layer (7), first varistor layer (3) and Gap be present between (7) in the second varistor layer.
  2. 2. flexible film pressure sensor according to claim 1, it is characterised in that:The supporting layer (4) is flake And between the flexible substrate of position first (1) and the second flexible substrate (5).
  3. 3. flexible film pressure sensor according to claim 1, it is characterised in that:The supporting layer (4) is ring-type branch Thing is supportted, first varistor layer (3) and the second varistor layer (7) are located at the top and bottom of supporting layer (4) respectively.
  4. 4. flexible film pressure sensor according to claim 1, it is characterised in that:The supporting layer (4) is bar And positioned at the side of the first varistor layer (3) and the second varistor layer (7).
  5. 5. flexible film pressure sensor according to claim 1, it is characterised in that:First flexible substrate (1) and Second flexible substrate (5) is by ethylene-vinyl acetate copolymer, polyvinyl alcohol, dimethyl silicone polymer, poly terephthalic acid second two At least one of materials such as ester, polymethyl methacrylate, polyimides and polyethylene are made.
  6. 6. flexible film pressure sensor according to claim 1, it is characterised in that:First varistor layer (3) and Two varistor layers (7) are with the spongy of three-dimensional poroid micro-structural.
  7. 7. flexible film pressure sensor according to claim 1, it is characterised in that:First varistor layer (3) and Two varistor layers (7) are made up of nano combined pressure sensitive, and the nano combined pressure sensitive includes conductive material, macromolecule material Material, dispersion and auxiliary agent.
  8. 8. flexible film pressure sensor according to claim 1, it is characterised in that:First varistor layer (3) and 1 μm -500 μm of the thickness of two varistor layers (7).
  9. 9. flexible film pressure sensor according to claim 1, it is characterised in that:The second electrode lay (6) may be used also It is located in the first flexible substrate (1), in addition to conductive layer (8), the conductive layer (8) are located in the second flexible substrate (5).
CN201710528899.8A 2017-07-01 2017-07-01 A kind of flexible film pressure sensor Pending CN107340082A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109300614A (en) * 2018-09-26 2019-02-01 常州市利多合金材料有限公司 A kind of flexible elastic stress sensing conductive film and preparation method thereof
CN109744785A (en) * 2019-02-22 2019-05-14 浙江大学 An intelligent adaptive mattress based on flexible pressure sensor array
CN110265682A (en) * 2019-06-06 2019-09-20 深圳市致远动力科技有限公司 The preparation method of battery testing intermediate
CN111678624A (en) * 2020-07-11 2020-09-18 北京先智集成技术有限公司 Multi-channel flexible pressure sensor and preparation method thereof
CN113155399A (en) * 2021-04-06 2021-07-23 中国空气动力研究与发展中心高速空气动力研究所 Synchronous measurement method for three-dimensional continuous distribution of surface pressure and deformation of high-speed aircraft
CN113405700A (en) * 2021-07-05 2021-09-17 苏州慧闻纳米科技有限公司 Large-area film pressure sensor
CN114689217A (en) * 2022-03-31 2022-07-01 南京工业大学 A flexible pressure-sensitive layer, preparation method and application

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JP2003106912A (en) * 2001-09-28 2003-04-09 Denso Corp Pressure-sensitive resistor and pressure-sensitive sensor
JP2003344185A (en) * 2002-05-30 2003-12-03 Fujikura Ltd Pressure sensitive sensor
US20050128047A1 (en) * 2003-03-25 2005-06-16 Tomoyasu Watanabe Pressure-sensitive resistor and pressure-sensitive sensor using the same
CN103091005A (en) * 2011-11-07 2013-05-08 中国医药大学 Pressure sensing component
CN105987776A (en) * 2014-08-22 2016-10-05 利永环球科技股份有限公司 Instant response pressure sensor
CN207366108U (en) * 2017-07-01 2018-05-15 苏州能斯达电子科技有限公司 A kind of flexible film pressure sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003106912A (en) * 2001-09-28 2003-04-09 Denso Corp Pressure-sensitive resistor and pressure-sensitive sensor
JP2003344185A (en) * 2002-05-30 2003-12-03 Fujikura Ltd Pressure sensitive sensor
US20050128047A1 (en) * 2003-03-25 2005-06-16 Tomoyasu Watanabe Pressure-sensitive resistor and pressure-sensitive sensor using the same
CN103091005A (en) * 2011-11-07 2013-05-08 中国医药大学 Pressure sensing component
CN105987776A (en) * 2014-08-22 2016-10-05 利永环球科技股份有限公司 Instant response pressure sensor
CN207366108U (en) * 2017-07-01 2018-05-15 苏州能斯达电子科技有限公司 A kind of flexible film pressure sensor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109300614A (en) * 2018-09-26 2019-02-01 常州市利多合金材料有限公司 A kind of flexible elastic stress sensing conductive film and preparation method thereof
CN109744785A (en) * 2019-02-22 2019-05-14 浙江大学 An intelligent adaptive mattress based on flexible pressure sensor array
CN109744785B (en) * 2019-02-22 2023-11-24 浙江大学 Intelligent self-adaptive mattress based on flexible pressure sensor array
CN110265682A (en) * 2019-06-06 2019-09-20 深圳市致远动力科技有限公司 The preparation method of battery testing intermediate
CN111678624A (en) * 2020-07-11 2020-09-18 北京先智集成技术有限公司 Multi-channel flexible pressure sensor and preparation method thereof
CN113155399A (en) * 2021-04-06 2021-07-23 中国空气动力研究与发展中心高速空气动力研究所 Synchronous measurement method for three-dimensional continuous distribution of surface pressure and deformation of high-speed aircraft
CN113405700A (en) * 2021-07-05 2021-09-17 苏州慧闻纳米科技有限公司 Large-area film pressure sensor
CN114689217A (en) * 2022-03-31 2022-07-01 南京工业大学 A flexible pressure-sensitive layer, preparation method and application
CN114689217B (en) * 2022-03-31 2023-08-25 南京工业大学 A kind of flexible pressure-sensitive layer, preparation method and application

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Inventor after: Xiong Zuoping

Inventor after: Gu Wen

Inventor after: Jing Hua

Inventor before: Xiong Zuoping

Inventor before: Zhang Ting

Inventor before: Gu Wen

Inventor before: Jing Hua

Inventor before: Wang Ran