CN107329635A - Conductive structure and contact panel - Google Patents

Abstract

The present invention provides a kind of conductive structure and the contact panel comprising the conductive structure.A kind of conductive structure includes a conductive oxide layer and a dielectric oxide layer.Dielectric oxide layer is arranged on conductive oxide layer.Conductive oxide layer and the overall sheet resistance R of dielectric oxide layer meet 105 ohm/side≤R≤135 ohm/side.The conductive structure that the present invention is provided can both reduce the coupled capacitor between wire, can also prevent and wire short circuit.

Description

Conductive structure and touch panel

technical field

The invention relates to a conductive structure, in particular to a high-resistivity conductive structure and a touch panel for its application.

Background technique

A typical touch panel includes a cover, a touch sensing layer and wires. The touch sensing layer is disposed on the visible area of the cover. The wires are arranged on the non-visible area of the cover and electrically connected to the touch sensing layer. Generally speaking, the touch sensing layer includes a plurality of first electrode strings and a plurality of second electrode strings. The first electrode string and the second electrode string are separated and insulated, and the ends of the two electrode strings are connected with wires, so as to transmit the sensed touch signal to the signal processing unit.

In some wiring forms, the wires connecting the first electrode string and the wires connecting the second electrode string are distributed on the non-visible area of the cover in parallel. The coupling capacitance further increases the capacitance at the intersection of the first electrode string and the second electrode string, causing the capacitance at the intersection to be saturated before being touched, thereby affecting the touch sensing function of the intersection.

Therefore, some touch panels may further include a metal grounding structure, which is disposed between the wires connected to the first electrode string and the wires connected to the second electrode string, so as to reduce the coupling capacitance between the two wires, Therefore, the capacitance at the intersection of the first electrode string and the second electrode string is reduced.

However, since the resistance of the metal grounding structure is too low, when the distance between the metal structure and the wire is too close, it is easy to short circuit with the wire.

Contents of the invention

The conductive structure disclosed in the embodiments of the present invention can not only reduce the coupling capacitance between wires, but also prevent short circuit with the wires.

According to an embodiment of the present invention, a conductive structure includes a conductive oxide layer and a dielectric oxide layer. The dielectric oxide layer is disposed on the conductive oxide layer. The overall square resistance R of the conductive oxide layer and the dielectric oxide layer satisfies 105 ohm/square≤R≤135 ohm/square.

According to another embodiment of the present invention, a touch panel includes a light-transmitting cover plate, a plurality of electrode strings, a plurality of wires, and at least one aforementioned conductive structure. These electrode series are arranged on the light-transmitting cover plate and are insulated from each other. The wires are respectively electrically connected to the electrode strings. The aforementioned conductive structure is insulated from the electrode strings and the wires, and a part of the conductive structure is located between the wires, or between one of the electrode strings and one of the wires.

In the above embodiments, since the overall square resistance R jointly formed by the conductive oxide layer and the dielectric oxide layer satisfies 105 ohm/square≦R≦135 ohm/square, the overall resistivity of the conductive structure can be increased. Since the conductive structure with high resistivity is located between the wires or between the wires and the electrode strings, it can not only reduce the coupling capacitance between the wires or between the wires and the electrode strings by its conductive properties, but also reduce the coupling capacitance between the wires or the wires and the electrode strings by its high resistivity. nature to prevent short circuits.

According to another embodiment of the present invention, a touch panel includes a transparent cover plate, a touch sensing layer, an inner ground structure and an outer ground structure. The touch sensing layer is disposed on the transparent cover plate. The inner grounding structure is disposed on the transparent cover plate, surrounds the touch sensing layer, and is insulated from the touch sensing layer. The square resistance R of the internal grounding structure satisfies 105 ohm/square ≤ R ≤ 135 ohm/square. The outer ground structure surrounds the inner ground structure. The resistivity of the inner ground structure is higher than the resistivity of the outer ground structure.

In the above embodiments, since the inner ground structure is a conductive structure with higher resistivity than the outer ground structure, under the same length and cross-sectional area, the inner ground structure has a higher resistance, so it can facilitate electrostatic discharge (ElectroStatic discharge). Discharge (ESD) is exported from the external ground structure to the outside of the touch panel, so as to prevent the electrostatic discharge from affecting the wires and the touch sensing layer.

Description of drawings

FIG. 1 shows a top view of a touch panel according to an embodiment of the present invention;

FIG. 2 shows a cross-sectional view of the touch panel in FIG. 1 along line 2-2;

FIG. 3 shows X-ray diffraction diagrams of indium tin oxide layers formed under different oxygen fluxes;

FIG. 4 shows a top view of a touch panel according to another embodiment of the present invention;

FIG. 5 shows a top view of a touch panel according to another embodiment of the present invention;

FIG. 6 shows a top view of a touch panel according to another embodiment of the present invention;

FIG. 7 shows a top view of a touch panel according to another embodiment of the present invention.

Description of main symbols:

100: Translucent cover

110: inner surface

112: Opaque area

114: Translucent area

120: outer surface

200: touch sensing layer

210: first electrode string

212: first electrode

214: The first connecting part

220: second electrode string

222: second electrode

224: the second connecting part

230: Insulation block

300: first wire

400: Second wire

500, 500a: conductive structure

510: conductive oxide layer

520: Dielectric oxide layer

530: contact interface

600: insulation structure

700: ground terminal

800: external ground structure

A: intersection

D1, D2: length direction

G1, G2: Gap

detailed description

The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

A plurality of embodiments of the present invention will be disclosed in the following figures. For the sake of clarity, many practical details will be described together in the following description. However, those skilled in the art should understand that in some embodiments of the present invention, these practical details are not necessary, and thus should not be used to limit the present invention. In addition, for the sake of simplifying the drawings, some commonly used structures and components will be shown in a simple and schematic manner in the drawings. In addition, for the convenience of readers, the size of each component in the drawing is not drawn according to the actual scale.

FIG. 1 shows a top view of a touch panel according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the touch panel in FIG. 1 along line 2-2. As shown in FIGS. 1 and 2 , the touch panel includes a transparent cover 100 , a touch sensing layer 200 , a first wire 300 , a second wire 400 and a conductive structure 500 . The touch sensing layer 200 , the first wire 300 , the second wire 400 and the conductive structure 500 are disposed on the same side of the transparent cover 100 and can be covered and protected by the transparent cover 100 . The touch sensing layer 200 includes a first electrode string 210 and a second electrode string 220 . The first electrode series 210 and the second electrode series 220 are disposed on the transparent cover plate 100 . The first electrode string 210 has a length direction D1. The second electrode string 220 has a length direction D2. The length direction D1 of the first electrode string 210 intersects the length direction D2 of the second electrode string 220 , and the first electrode string 210 is insulated from the second electrode string 220 to prevent short circuit between them. The first wire 300 is electrically connected to the first electrode string 210 . The second wire 400 is electrically connected to the second electrode string 220 . At least part of the conductive structure 500 is located between the first wire 300 and the second wire 400 and separated from the first wire 300 and the second wire 400 . In other words, the first wire 300 is separated from the part of the conductive structure 500 by a gap G1 , and the second wire 400 is separated from the part of the conductive structure 500 by a gap G2 .

Since the conductive structure 500 exists between the first wire 300 and the second wire 400, the conductive structure 500 can prevent the first wire 300 and the second wire 400 from directly generating coupling capacitance, thereby reducing the contact between the first electrode string 210 and the second electrode. Capacitance at intersection A of string 220 . In other words, a coupling capacitance C1 is generated between the conductive structure 500 and the first wire 300 closest to the conductive structure 500 , and a coupling capacitance C2 is generated between the conductive structure 500 and the second wire 400 closest to the conductive structure 500 . These two coupling capacitors C1 and C2 will form an equivalent series capacitance, and the value of this equivalent series capacitance is Compared with the coupling capacitance directly formed by the first wire 300 and the second wire 400 , the equivalent series capacitance formed by the coupling capacitors C1 and C2 is relatively small. Therefore, disposing the conductive structure 500 between the first wire 300 and the second wire 400 can help reduce the coupling capacitance between the first wire 300 and the second wire 400 .

In addition, the conductive structure 500 can also prevent short circuit with the first wire 300 and/or the second wire 400 . Further, as shown in FIG. 2 , the conductive structure 500 includes a conductive oxide layer 510 and a dielectric oxide layer 520 . The dielectric oxide layer 520 is disposed on the conductive oxide layer 510 . The overall resistivity of the conductive oxide layer 510 and the dielectric oxide layer 520 is greater than at least twice the resistivity of the material of the conductive oxide layer 510, so that the overall square resistance R of the conductive oxide layer 510 and the dielectric oxide layer 520 satisfies 105 ohms /square≤R≤135 ohms/square. In other words, if the overall resistivity of the conductive structure 500 formed by the conductive oxide layer 510 and the dielectric oxide layer 520 is ρ1, and the material of the conductive oxide layer 510 has a resistivity of ρ2, then ρ1>2*ρ2 is satisfied.

The above-mentioned resistivity characteristic of the conductive structure 500 is caused by the oxygen flux during the fabrication of the conductive oxide layer 510 . Furthermore, during the manufacturing process of the conductive structure 500 , the conductive material of the conductive oxide layer 510 can be deposited on the transparent cover plate 100 by means of sputtering. During the sputtering process, the oxygen flux can be controlled between 20 sccm (Standard Cubic Centimeter per Minute, standard milliliter per minute) and 50 sccm, preferably 30 sccm to 40 sccm. After the conductive oxide layer 510 is formed, the dielectric oxide layer 520 may be formed on the conductive oxide layer 510 to form a contact interface 530 with the conductive oxide layer 510 . When the conductive oxide layer 510 is formed under such an oxygen flux, and then the dielectric oxide layer 520 is formed on the conductive oxide layer 510, the overall resistivity of the two will greatly exceed (more than twice) that of the conductive oxide layer 510. Material resistivity. With such characteristics, the square resistance R of the conductive structure 500 can satisfy 105 ohm/square≤R≤135 ohm/square and have a high resistivity, which is beneficial to prevent short circuit with the first wire 300 or short circuit with the second wire 400, Or short circuit with both the first wire 300 and the second wire 400 .

For example, the material of the conductive oxide layer 510 may include zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), indium aluminum oxide Zinc (IAZO) or any combination of the above, but the present invention is not limited thereto. The material of the dielectric oxide layer 520 may include silicon oxide, such as silicon dioxide (SiO 2 ) or organic oxide, but the invention is not limited thereto. When the conductive oxide layer 510 of the above material is formed with high-flux (for example: between 20 sccm and 50 sccm) of oxygen, together with the silicon oxide formed thereon, the resistivity of the conductive structure 500 can be effectively improved, And prevent short circuit problem.

Specifically, in some embodiments, the material of the conductive oxide layer 510 may be indium tin oxide (ITO), and the material of the dielectric oxide layer 520 may be silicon dioxide. In other words, the conductive oxide layer 510 can be an ITO layer, and the dielectric oxide layer 520 can be a silicon dioxide layer. The silicon dioxide layer is formed on the ITO layer and formed after the ITO layer such that the ITO layer is in contact with the silicon dioxide layer. During the formation of the ITO layer, the flow rate of oxygen may be between 20 sccm and 50 sccm. In this way, the overall resistance of the ITO layer and the silicon dioxide layer can reach at least 60 kohms (the thickness of the ITO layer is 60 nm), which is more than twice the resistance of the ITO (about 30 kohms). It can be seen that when the conductive oxide layer 510 is formed with high flux (eg, between 20 sccm and 50 sccm) of oxygen, the conductive structure 500 can have high resistivity. The following table lists the resistances of the experimental group and the control group of the conductive structure 500 to help illustrate that the conductive oxide layer 510 formed by high-flux oxygen, combined with the silicon dioxide layer, can help to greatly increase the resistivity of the conductive structure 500 .

In the above table, the conductive structure of the experimental group includes the ITO layer and the silicon dioxide layer formed on the ITO layer, and the ITO layer is in the high flux oxygen (for example: between 20 sccm and 50 sccm The conductive structure of control group 1 is an indium tin oxide layer with the same length and cross-sectional area. 2sccm to 3sccm), and the indium tin oxide layer does not cover the silicon dioxide layer; the conductive structure of the control group 2 includes the indium tin oxide layer with the same length and cross-sectional area, and the indium tin oxide layer is formed during the formation process The oxygen flux of the control group is the same as that of the experimental group. The difference between the control group 2 and the experimental group is that the indium tin oxide layer of the control group 2 is not covered with a silicon dioxide layer; the conductive structure of the control group 3 includes the same length and cross-section area of the indium tin oxide layer and the silicon dioxide layer formed on the indium tin oxide layer, and the difference between the control group three and the experimental group is that the indium tin oxide layer of the control group three is in low flux oxygen (such as 2sccm to 3sccm) formed below. From the comparison between control group 1 and control group 2 in the above table, it can be seen that when the indium tin oxide layer is formed under high-flux oxygen, compared with the indium tin oxide layer formed under low-flux oxygen, the resistance value will be lower. A small increase, but not much change. From the comparison between control group 1 and control group 3 in the above table, it can be seen that the resistance value of the indium tin oxide layer formed under low flux oxygen combined with the silicon dioxide layer does not change significantly. From the comparison between the experimental group and the control group 2 and 3 in the above table, it can be known that when the indium tin oxide layer is formed under high-flux oxygen and combined with the silicon dioxide layer, the resistance value of the formed conductive structure ( Such as: about 99.3 kohm to 113.0 kohm), which greatly exceeds the resistance value of the conductive structure formed when the indium tin oxide layer is formed under low-flux oxygen and combined with the silicon dioxide layer (such as: About 20.3 kohms to 22.0 kohms). The square resistance R of the conductive structure of the present invention satisfies 105 ohm/square≤R≤135 ohm/square, while the square resistance R of the conventional conductive structure formed under low flux oxygen is 65 ohm/square≤R≤85 ohm/square . Therefore, when the indium tin oxide layer is formed with high-flux oxygen and combined with the silicon dioxide layer, the conductive structure formed has a larger square resistance and resistivity, that is, under the same thickness and cross-sectional area, The resistance is larger.

In some embodiments, when the conductive oxide layer 510 is formed with a high flux (eg, between 20 sccm and 50 sccm) of oxygen, the crystallinity of the conductive oxide layer 510 in the (222) crystallographic direction may be greater than 70% and Less than 100%. For example, when the conductive oxide layer 510 is an ITO layer, the crystallinity of the ITO layer in the (222) crystallographic direction may be greater than 70% and less than 100%. The following uses X-ray diffraction data to help explain the effect of oxygen flux on crystallinity. Here, please refer to Figure 3, which shows the X-ray diffraction diagram of the indium tin oxide layer formed under different oxygen fluxes (XRD pattern). Through the analysis of the diffraction data in this figure, it can be seen that the crystallinity of the ITO layer in the (222) crystallographic direction can be controlled by the oxygen flux, and the crystallinity of the ITO layer in the (222) crystallographic direction is related to The oxygen flux is roughly positively correlated. Since the oxygen flux is approximately positively correlated with the crystallinity in the (222) crystallographic direction, and the oxygen flux is approximately positively correlated with the resistivity of the conductive structure 500, the conductive structure can be judged by the crystallinity Overall resistivity of 500. For example, if the crystallinity of the ITO layer of the conductive structure 500 in the (222) crystallographic direction is greater than 70%, it can be determined that the resistivity of the conductive structure 500 is high enough to prevent contact with the first wire 300 and/or the second wire 300. The two wires 400 are shorted. It can be understood that the crystallization direction and the corresponding crystallinity degree described herein are only examples, and the present invention is not limited thereto.

In some embodiments, as shown in FIG. 2 , the conductive oxide layer 510 is closer to the transparent cover plate 100 than the dielectric oxide layer 520 . Furthermore, in the fabrication process of the conductive structure 500, the conductive oxide layer 510 is first formed on the transparent cover plate 100 under high-flux oxygen, and then the dielectric oxide layer is formed on the conductive oxide layer 510 520 , so the conductive oxide layer 510 is closer to the light-transmitting cover plate 100 than the dielectric oxide layer 520 . In other words, the conductive oxide layer 510 is located between the dielectric oxide layer 520 and the transparent cover 100 .

In some embodiments, as shown in FIG. 1 and FIG. 2 , the transparent cover 100 includes an inner surface 110 and an outer surface 120 . The inner surface 110 is opposite to the outer surface 120 . The outer surface 120 can be used as a touch operation surface for the user. In some embodiments, the outer surface 120 may be provided with functional layers such as anti-smudge, anti-fingerprint, anti-scratch or anti-glare. The inner surface 110 has an opaque region 112 and a transparent region 114 . The opaque region 112 is adjacent to the transparent region 114 . In this embodiment, the opaque area 112 is the outer area (or peripheral area) of the inner surface 110, the light-transmitting area 114 is the inner area (or central area) of the inner surface 110, and is surrounded by the opaque area 112 . In some embodiments, the inner surface 110 and the outer surface 120 can be chemically or physically strengthened to improve the touch sensing layer 200, the first conductive wire 300, the second conductive wire 400 and the conductive layer under the transparent cover plate 100. The protective effect of structure 500. In other words, the touch sensing layer 200 , the first wire 300 , the second wire 400 and the conductive structure 500 are all disposed on the inner surface 110 of the transparent cover 100 and can be protected by the transparent cover 100 . In some embodiments, the opaque region 112 can be realized by disposing a light-shielding layer (such as ink) on the inner surface 110 , but the invention is not limited thereto.

In some embodiments, as shown in FIGS. 1 and 2 , the conductive structure 500 is located in the opaque region 112 of the inner surface 110 . However, since the material of the conductive oxide layer 510 of the conductive structure 500 can be a light-transmitting conductive material (such as indium tin oxide), and the material of the dielectric oxide layer 520 can be a light-transmitting dielectric material (such as silicon dioxide), the conductive structure The conductive structure 500 is light-transmitting without shielding other components. Therefore, in some embodiments, the conductive structure 500 may also be at least partially located in the light-transmitting region 114 of the inner surface 110, thereby helping to enlarge the area of the light-transmitting region 114. , that is, the visible area of the touch panel can be enlarged. It is worth noting that when the conductive structure 500 is located in the light-transmitting region 114, at least a part of the conductive structure 500 may be located between the second electrode string 220 and the first wire 300, so as to separate the second electrode string 220 from the first wire 300, so as to prevent the second electrode string 220 from directly generating coupling capacitance with the first wire 300. In other words, when the conductive structure 500 is located in the light-transmitting region 114 , both the effect of reducing the coupling capacitance between the second electrode string 220 and the first wire 300 and the effect of enlarging the visible area can be achieved.

In some implementations, as shown in FIG. 1 , the conductive structure 500 intersects with the projection of the first conductive wire 300 on the inner surface 110 of the light-transmitting cover 100 , and the conductive structure 500 is insulated from the first conductive wire 300 to avoid touching Signals generate unwanted outflows. For example, the touch panel further includes an insulating structure 600 . The insulating structure 600 is located at the intersection of the conductive structure 500 and the first wire 300 , and separates the conductive structure 500 from the first wire 300 , so as to insulate the conductive structure 500 from the first wire 300 . In some implementations, the conductive structure 500 is also insulated from the second wire 400 and the touch-sensing layer 200 to prevent unnecessary outflow of the touch signal. Further, as long as the projection of the conductive structure 500 on the inner surface 110 of the transparent cover plate 100 is consistent with the projection of the first electrode string 210 , the second electrode string 220 , the first wire 300 or the second wire 400 on the inner surface 110 If the projections intersect, the insulating structure 600 will be located between the conductive structure 500 and the first electrode string 210, the second electrode string 220, the first wire 300 or the second wire 400, so as to facilitate the insulation of the conductive structure 500 from these electrode strings and wires, In order to avoid unnecessary outflow of touch signals.

In some embodiments, as shown in FIG. 1 , the length direction D1 of the first electrode string 210 and the length direction D2 of the second electrode string 220 may be perpendicular to each other. Further, the length direction D1 can be the direction of the horizontal axis in FIG. 1 , and the length direction D2 can be the direction of the vertical axis in FIG. 1 . The first electrode string 210 may include a plurality of first electrodes 212 and a plurality of first connecting parts 214 . The first electrodes 212 and the first connecting portions 214 are arranged alternately along the length direction D1. Each first connecting portion 214 is connected to two adjacent first electrodes 212 in the length direction D1. Similarly, the second electrode string 220 may include a plurality of second electrodes 222 and a plurality of second connection parts 224 . The second electrodes 222 and the second connection portions 224 are alternately arranged along the length direction D2. Each second connecting portion 224 is connected to two adjacent second electrodes 222 in the length direction D2. In some implementations, the touch sensing layer 200 further includes an insulating block 230 . The insulating block 230 is located at the intersection A of the first electrode string 210 and the second electrode string 220 , and separates the first electrode string 210 from the second electrode string 220 to insulate them. For example, the insulating block 230 can be located between the first connection portion 214 of the first electrode string 210 and the second connection portion 224 of the second electrode string 220 to separate the first connection portion 214 from the second connection portion 224 . In some embodiments, the materials of the first electrode 212 , the first connecting portion 214 , the second electrode 222 and the second connecting portion 224 may be ITO or IZO, but the invention is not limited thereto.

In some embodiments, when the material of the first electrode string 210 and the second electrode string 220 is ITO, and the material of the conductive oxide layer 510 is also ITO, the two kinds of ITO crystallize at (222) The degree of crystallinity in the direction is different. Further, the conductive oxide layer 510 has higher crystallinity in the (222) crystallographic direction, and has higher resistivity, so as to prevent short circuits, and since the first electrode string 210 and the second electrode string 220 do not need to be intentionally Considering the short-circuit problem between the wires, it can have a lower resistivity and improve the touch sensitivity, so the crystallinity of the first electrode string 210 and the second electrode string 220 in the (222) crystallographic direction is comparable to that of the conductive oxide layer 510 The degree of crystallinity in the (222) crystallographic direction is low.

FIG. 4 shows a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 4 , the main difference between this embodiment and the foregoing embodiments is that: the touch panel of this embodiment further includes a ground terminal 700 . The conductive structure 500 is electrically connected to the ground terminal 700 . In this way, the conductive structure 500 can not only be used to reduce the coupling capacitance between the first wire 300 and the second wire 400 , but also be used as a ground structure of the touch panel. Therefore, external electrostatic discharge (ESD) is prevented from affecting the touch sensing layer 200 .

FIG. 5 shows a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 5 , the main difference between this embodiment and the embodiment shown in FIG. 4 lies in that the shape of the conductive structure 500 a is different from that of the aforementioned conductive structure 500 . Specifically, the conductive structure 500 a is ring-shaped and surrounds the touch sensing layer 200 . The conductive structure 500a is also electrically connected to the ground terminal 700, and can be used as a ground structure of the touch panel. In other words, the ring-shaped conductive structure 500 a that can be used for grounding surrounds the first electrode string 210 and the second electrode string 220 , which can further prevent ESD from affecting the touch function of the touch sensing layer 200 .

FIG. 6 shows a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 6 , the main difference between this embodiment and the embodiment shown in FIG. 5 is that the conductive structure 500 a is not electrically connected to the ground terminal. That is to say, the ring-shaped design of the conductive structure 500 a is not used for grounding, but mainly serves to reduce the coupling capacitance between the first wire 300 and the second wire 400 .

FIG. 7 shows a top view of a touch panel according to another embodiment of the present invention. As shown in FIG. 7 , the main difference between this embodiment and the embodiment shown in FIG. 5 is that this embodiment also includes an external ground structure 800 . The external ground structure 800 surrounds the conductive structure 500a, and the resistivity of the conductive structure 500a is higher than the resistivity of the external ground structure 800, so that most of the ESD can be guided out of the touch panel from the external ground structure 800, and ESD can be prevented from affecting the touch panel. The sensing layer 200 , the first wire 300 and the second wire 400 . Furthermore, both the conductive structure 500a and the external ground structure 800 are connected to the ground terminal 700, and the conductive structure 500a is surrounded by the external ground structure 800, and can be used as an internal ground structure of the touch panel. Since the conductive structure 500 a surrounds the touch-sensing layer 200 and the outer ground structure 800 surrounds the conductive structure 500 a, the conductive structure 500 a is closer to the touch-sensing layer 200 than the outer ground structure 800 . However, since the resistivity of the conductive structure 500a is higher than that of the external ground structure 800, when ESD occurs in the touch panel, it is easier for the ESD to travel to the external ground structure 800 with a lower resistivity than to the external ground structure 800 with low resistivity. The tall conductive structure 500a advances. In this way, ESD can be prevented from entering the conductive structure 500a, and the ESD can be further prevented from affecting the touch sensing layer 200 surrounded by the conductive structure 500a.

In some embodiments, the material of the conductive structure 500a is different from that of the external ground structure 800 . Further, the conductive structure 500 a may have a conductive oxide layer 510 and a dielectric oxide layer 520 (as shown in FIG. 2 ) like the conductive structure 500 , and the external ground structure 800 may be metal, but the present invention is not limited thereto. Since the conductive oxide layer 510 formed under high-flux oxygen can make the conductive structure 500a have a higher resistivity than metal, it is beneficial to make the resistivity of the conductive structure 500a higher than the resistivity of the external ground structure 800, thereby Helps ESD out of the touch panel from the external ground structure 800 .

In some implementations, the external ground structure 800 surrounds the first wire 300 and the second wire 400 to prevent ESD from affecting the first wire 300 and the second wire 400 . Specifically, in some implementations, the first wire 300 and the second wire 400 are at least partially located between the conductive structure 500 a and the external ground structure 800 .

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the present invention. within the scope of protection.

Claims (15)

1. a kind of conductive structure, it is characterised in that include：

One conductive oxide layer；And

One dielectric oxide layer, is arranged on the conductive oxide layer, the conductive oxide layer and the dielectric oxide layer Overall sheet resistance R meets 105 ohm/side≤R≤135 ohm/side.

2. conductive structure as claimed in claim 1, it is characterised in that the conductive oxide layer is in (222) crystallization side Upward crystallinity is more than 70% and less than 100%.

3. conductive structure as claimed in claim 1, it is characterised in that the material of the conductive oxide layer is comprising saturating Bright zinc oxide, tin indium oxide, indium zinc oxide, indium gallium zinc, aluminum zinc oxide, indium oxide aluminium zinc Or above-mentioned any combination.

4. the conductive structure as described in claim 1 or 3, it is characterised in that the dielectric oxide layer includes silica Compound or organic oxygen compound.

5. conductive structure as claimed in claim 1, it is characterised in that the conductive oxide layer is a tin indium oxide Layer, the dielectric oxide layer is a silicon dioxide layer, and the indium tin oxide layer contacts with the silicon dioxide layer.

6. the conductive structure as described in claim 1 or 5, it is characterised in that the conductive oxide layer passes through sputter Formed, the flow of oxygen is between 20sccm and 50sccm in the sputtering process.

7. a kind of contact panel, it is characterised in that include：

One euphotic cover plate；

Plural electrode array, is arranged on the euphotic cover plate, those electrode array mutually insulateds；

Complex lead, is electrically connected those electrode arrays；And

At least just like the conductive structure any one of claim 1 to 6, the conductive structure and those electricity Pole is gone here and there and those wire insulations, and the conductive structure at least a portion system between those wires, Or between the one of those electrode arrays and the one of those wires.

8. contact panel as claimed in claim 7, it is characterised in that the conductive oxide layer is than the dielectric oxidation Layer is closer to the euphotic cover plate.

9. contact panel as claimed in claim 7, it is characterised in that the conductive structure is ring-type, and ring Around those electrode arrays.

10. contact panel as claimed in claim 7, it is characterised in that further include an earth terminal, conduction knot Structure is electrically connected with the earth terminal.

11. contact panel as claimed in claim 7, it is characterised in that further include an external ground structure, surround The resistivity of the conductive structure, the wherein conductive structure is higher than the resistivity of the external ground structure.

12. contact panel as claimed in claim 7, it is characterised in that the conductive structure is transparent, part Or it is entirely located in the visible area of the contact panel.

13. a kind of contact panel, it is characterised in that include：

One euphotic cover plate；

One touch-control sensing layer, is arranged on the euphotic cover plate；

Ground structure in one, is arranged on the euphotic cover plate, and around the touch-control sensing layer, and with the touch-control Inductive layer insulate, and the sheet resistance R of the interior ground structure meets 105 ohm/side≤R≤135 ohm/side； And

One external ground structure, around the interior ground structure, the wherein resistivity of the interior ground structure is outer higher than this The resistivity of ground structure.

14. contact panel as claimed in claim 13, it is characterised in that the interior ground structure is conductive comprising one Oxide layer and a dielectric oxide layer, the dielectric oxidation series of strata are arranged on the conductive oxide layer, wherein Crystallinity of the conductive oxide layer on (222) crystallization direction is more than 70%.

15. contact panel as claimed in claim 13, it is characterised in that the conductive structure is transparent, portion Part or the visible area for being entirely located in the contact panel.