CN107329206B - A kind of multichannel EML integrated package and its AWG production method - Google Patents
A kind of multichannel EML integrated package and its AWG production method Download PDFInfo
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- CN107329206B CN107329206B CN201710773969.6A CN201710773969A CN107329206B CN 107329206 B CN107329206 B CN 107329206B CN 201710773969 A CN201710773969 A CN 201710773969A CN 107329206 B CN107329206 B CN 107329206B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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Abstract
The present invention relates to optical module technical field, a kind of multichannel EML integrated package and its AWG production method are provided.Component includes shell, temperature monitoring circuit and integral type TEC, and hot face and two independent huyashi-chuuka (cold chinese-style noodles) including cobasis plate, the carrying one of the first huyashi-chuuka (cold chinese-style noodles) is heat sink, it is heat sink on be provided with Laser emission chip；Second huyashi-chuuka (cold chinese-style noodles) carries an AWG, and the entering light face of AWG is provided with lens array, and optical signal waveguide section is provided with the first groove after convergence is used for transmission in AWG, and SOA chip is provided in the first groove；Hot face is fixed on the inner wall of shell.Multichannel EML integrated package provided by the invention, not only by using integral type TEC, the laser side TEC and AWG side TEC of conventional separating making is fabricated to the integral type TEC in heat together face, to ensure that the coupling accuracy between laser and AWG, and the purpose of passive coupling may be implemented.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of optical modules, in particular to a multi-channel EML integrated component and an AWG manufacturing method thereof.
[ background of the invention ]
In modern communication systems, as the transmission capacity of the system increases, the speed of the optical device package increases, and the transmission distance of the device also increases. Particularly in the field of high-speed packaging, a Directly Modulated Semiconductor Laser (DML) gradually overcomes the influence of chirp, the modulation rate is higher and higher, and a DML-Modulated Laser component has a lower cost advantage and plays a role in determining the market of transmission distances of 10km and below. The Laser component adopting the external modulation structure has excellent performance and higher cost, and must aim at the market of more than 10Km, so that the integrated component of the long-distance transmission monolithic Modulated Laser (abbreviated as EML) has large market space.
At present, a system for long-distance transmission is mostly implemented by adopting a mode of adding a multi-channel EML integrated component and a packaged Semiconductor Optical Amplifier (SOA), and as shown in fig. 1, the system built by the mode is large in size, high in power consumption and high in cost. In addition, the EML component and the SOA component are connected through the optical fiber, and when the EML component and the SOA component are applied to a system, optical fiber coiling is needed, so that the process is complex, the insertion loss is large, phenomena of fiber breakage, fiber breakage and the like are easily caused, and the yield is influenced.
Fig. 2 is a schematic structural diagram of another conventional multi-channel EML integrated component, in which, because the TEC structure adopted by the multi-channel EML integrated component is two independent elements (as shown in TEC1 and TEC 2), the error in the Z-axis cannot be controlled to within 20um, and as shown in fig. 2, a separate lens must be used between the laser and the AWG to perform optical coupling between the laser, the separate lens and the AWG in an active light calibration manner. This implementation not only results in inefficient manufacturing, but also results in increased costs due to the additional need to configure the individual lenses.
[ summary of the invention ]
The technical problem to be solved by the invention is that the processing technology of the EML integrated component in the prior art is complex, and the coupling of the laser and the AWG can be completed only by adopting an active light-focusing mode; for the EML integrated component comprising the SOA structure, the device structure is complex, and the serial structure causes the problems that the size of the EML integrated component is large and the like.
The invention adopts the following technical scheme:
the invention provides a multi-channel EML integrated assembly, which comprises a tube shell 1, a temperature monitoring circuit and an integrated TEC2, wherein the integrated TEC2 comprises a hot surface 21 with a common substrate and two independent cold surfaces,
a first cold surface 22 of the two cold surface structures bears a heat sink 4, and a laser emission chip 5 and a first thermistor 3 are arranged on the heat sink 4;
the second cold surface 23 of the two cold surface structures bears an AWG6, the light entrance surface of the AWG6 is provided with a lens array 9, the waveguide segment for transmitting the converged optical signal in the AWG6 is provided with a first groove 31, and the first groove 31 is provided with an SOA chip 7; wherein, the AWG6 is also provided with a second thermistor 8;
the first thermistor 3, the second thermistor 8, a first loop formed by the first cold surface 22 and a first hot surface area 24 in the hot surface 21 of the common substrate, and a second loop formed by the second cold surface 23 and a second hot surface area 25 in the hot surface 21 of the substrate are respectively connected with a temperature monitoring circuit;
the hot side 21 is fixed to the inner wall of the housing 1.
Preferably, a second groove 32 is made on the AWG6 and located near the first groove 31, and the second thermistor 8 is disposed in the second groove 32; wherein the depth of the second groove 32 is such that the heat sensing region of the second thermistor 8 after completion of flip-chip bonding is at the same level as the waveguide of the AWG 6.
Preferably, the AWG6 is used for transmitting the converged optical signal waveguide segment and is provided with a lens 10 on the light exit surface side of the first groove 31.
Preferably, the difference in surface height between the first cold side and the second cold side on the hot side 21 of the common substrate is less than 20 um.
Preferably, the heat sink 4 is aluminum nitride ALN.
In a second aspect, the present invention further provides a method for manufacturing an AWG in a multi-channel EML integrated component, where the AWG6 has a complete optical waveguide structure on a base board, and the method includes:
manufacturing a first layer of mask on a light inlet surface of the AWG6 base plate, and performing a first round of corrosion; wherein, the pattern of the first layer mask is a circular spot corresponding to the center of each lens in the lens array 9;
after the first round of corrosion in preset time is finished, a second layer of mask is manufactured on the light inlet surface of the AWG6, and the second round of corrosion is carried out; sequentially carrying out n-round corrosion to obtain a lens array 9; wherein, the diameter of the circular spot in the pattern of each layer of the mask increases along with the increasing of the layer number.
Preferably, the manufacturing method further comprises controlling the growth rate of the mask thickness and the etching rate of the light entering surface of the AWG6 base plate in the etching solution so that the rates of the growth rate and the etching rate satisfy a preset ratio; the manufacturing method further comprises:
and manufacturing the thickness and the corrosion depth of each layer of mask, and finishing according to the preset proportion, so that the lens array 9 after finishing each round of corrosion can be represented according to the preset proportion through the current mask graph.
Preferably, mask patterns of a first groove 31 and a second groove 32 are manufactured, and the first groove 31 and the second groove 32 are etched; wherein the first groove 31 is located in the AWG6 for transmitting the condensed optical signal waveguide segment; the second groove 32 is located in the vicinity of the first groove 31, and the depth of the second groove 32 is such that the heat sensing region of the second thermistor 8 after completion of flip-chip bonding is located on the same level as the waveguide of the AWG 6.
Preferably, the step of forming the first mask layer is performed in accordance with the step of forming the first mask layer corresponding to the lens array 9, so as to complete the formation of the lens 10 disposed on the light exit surface side of the first groove 31.
Preferably, a conductive metal layer is formed at the bottom of the first groove 31 and the second groove 32, and the conductive metal layer is formed by metal organic chemical vapor deposition MOCVD after a mask layer of a conductive metal layer pattern is formed.
In a third aspect, the present invention further provides a method for manufacturing an AWG in a multi-channel EML integrated component, where the method for manufacturing includes:
growing an AWG host material on the wafer;
when the thickness of the grown AWG main body material reaches the preset position that the lens array is positioned at the lower edge of the AWG, starting to manufacture a mask pattern of the lens array on the AWG layer by layer; wherein, the mask patterns of the lens array on the AWG are sequentially manufactured according to the area change rule of the cross section of the lens from big to small and from small to big;
the step-by-step manufacturing of the mask pattern of the AWG upper lens array specifically comprises the following steps:
after the growth of the AWG main body material of the corresponding layer is manufactured each time, the mask pattern of the corresponding layer is removed, and the manufacturing of a new layer of mask pattern and the growth of the AWG main body material are started until the growth of the lens array is finished.
Preferably, the method further comprises:
when the thickness of the AWG main body material reaches the preset region where the optical waveguide is located, the growth of the AWG main body material is stopped, and a first mask pattern of the optical waveguide is manufactured; the boundary of the first mask pattern of the optical waveguide and the region for manufacturing the lens array on the AWG have a preset distance, and the non-shielded region of the first mask pattern is a region of the optical waveguide to be grown;
after the optical waveguide is grown, removing the first mask pattern; and recovering the process of manufacturing the mask pattern of the lens array on the AWG layer by layer and the growth of the AWG main body material.
Preferably, the method further comprises:
when the growing AWG main body material covers the preset region where the optical waveguide is located, the growing of the AWG main body material is stopped, and a second mask pattern of the optical waveguide is manufactured; the boundary of the second mask graph of the optical waveguide and the region for manufacturing the lens array on the AWG have a difference of a preset distance;
under the assistance of the second mask pattern, corroding an optical waveguide region for growing an optical waveguide material, and growing the optical waveguide material;
after the optical waveguide is grown, removing the second mask pattern; and recovering the process of manufacturing the mask pattern of the lens array on the AWG layer by layer and the growth of the AWG main body material.
Preferably, after growing the lens array and AWG host material, the method further comprises:
making a first groove and a second groove mask pattern, and etching the first groove and the second groove; wherein, the first groove is positioned in the AWG for transmitting the converged optical signal waveguide segment; the second groove is located in the vicinity of the first groove, and the depth of the second groove is such that the heat sensing region of the second thermistor after completion of flip-chip bonding is located on the same level as the waveguide of the AWG.
Preferably, a lens is disposed on the light exit surface side of the first groove, and the method further includes:
when the thickness of the grown AWG main body material reaches the preset position that the first groove is positioned at the lower edge position of the AWG and/or the lens in the first groove is positioned at the lower edge position of the AWG, starting to manufacture mask patterns of the first groove on the AWG and/or the lens in the first groove layer by layer; and, after the growth of the AWG main body material of the corresponding layer is made each time, the mask pattern of the corresponding layer is removed, and the making of a new layer of mask pattern and the growth of the AWG main body material are started until the growth of the first groove and/or the lens is finished.
Compared with the prior art, the invention has the beneficial effects that:
according to the multi-channel EML integrated component provided by the invention, the integrated TEC is adopted, and the laser side TEC and the AWG/SOA side TEC which are manufactured by conventional separation are manufactured into the integrated TEC with the common heating surface, so that the coupling precision between the laser and the AWG is ensured, and the purpose of passive coupling can be realized. Compared with the prior art, the mode of needing to borrow the coupling lens saves the manufacturing cost and the processing efficiency.
On the other hand, the invention also realizes the improvement of the control efficiency and the reduction of the production cost by a mode of manufacturing the first groove in the AWG, directly carrying out flip-chip welding of an SOA on the first groove of the AWG on the continuous devices needing two sections of optical fibers in the prior art and adopting a mode of sharing the integrated TEC to complete the control of the respective temperature.
[ description of the drawings ]
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a functional module architecture of an EML integrated component in the prior art provided by the present invention;
fig. 2 is a schematic structural diagram of an EML integrated component in the prior art provided by the present invention;
fig. 3 is a schematic structural diagram of an EML integrated component according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a functional module architecture of an EML integrated component according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an AWG in an EML integrated component according to an embodiment of the present invention;
fig. 6 shows a method for manufacturing AWG in an EML integrated component according to an embodiment of the present invention;
fig. 7 illustrates a method for manufacturing AWG in an EML integrated component according to an embodiment of the present invention;
fig. 8 is another method of manufacturing AWG in an EML integrated component according to an embodiment of the present invention;
fig. 9 shows a method for manufacturing AWG in an EML integrated component according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention adopts the packaging structure and the manufacturing method which integrate the SOA chip and the EML chip together, thereby not only greatly reducing the volume of the system and the cost, but also effectively reducing the power consumption of the whole system.
In addition, the processing and manufacturing of the EML component are completed by the existing independent TEC structure through the integrated TEC with the common-heating surface, so that the error precision between the laser and the AWG is improved, the active coupling in the prior art can be converted into the passive coupling, and the processing efficiency of the EML component is improved.
How the present invention can achieve the above technical solution will be illustrated by specific embodiments.
Example 1:
embodiment 1 of the present invention provides a multi-channel EML integrated component, as shown in fig. 3, including a case 1, a temperature monitoring circuit, and an integrated TEC2, where the integrated TEC2 includes a common-substrate hot side 21 and two independent cold side structures (including 22 and 23 labeled in fig. 3).
The first cold surface 22 of the two cold surface structures bears a heat sink 4, and the laser emitting chip 5 and the first thermistor 3 are arranged on the heat sink 4.
The second cold surface 23 of the two cold surface structures bears an AWG6, the light entrance surface of the AWG6 is provided with a lens array 9, the waveguide segment for transmitting the converged optical signal in the AWG6 is provided with a first groove 31, and the first groove 31 is provided with an SOA chip 7; wherein, a second thermistor 8 is also arranged on the AWG 6.
The lens array 9 can be obtained by performing mask etching step by step after the AWG optical waveguide structure is completed, or by mask growth during the AWG manufacturing process. The specific implementation thereof will be described in the methods of example 2 and example 3.
The first thermistor 3, the second thermistor 8, a first loop formed by the first cold surface 22 and the first hot surface area 24 in the hot surface 21 of the common substrate, and a second loop formed by the second cold surface 23 and the second hot surface area 25 in the hot surface 21 of the substrate are respectively connected with a temperature monitoring circuit.
Wherein the first and second circuits may represent two pairs of electrodes on the hot side, wherein the first pair of electrodes is configured to provide a drive current to the first circuit formed by the first cold side 22 and the first hot side region 24; and a second pair of electrodes is used to provide drive current to a second circuit formed by the second cold face 23 and the second hot face region 25. The temperature monitoring circuit can be a manufactured patch type lead or a conventional lead represented in the assembly and is used for working after being connected with an external temperature monitoring device in use.
The hot side 21 is fixed to the inner wall of the housing 1.
According to the multichannel EML integrated component provided by the embodiment of the invention, the integrated TEC is adopted, and the laser side TEC and the AWG/SOA side TEC which are manufactured by conventional separation are manufactured into the integrated TEC with the common heating surface, so that the coupling precision between the laser and the AWG is ensured, and the purpose of passive coupling can be realized. Compared with the prior art, the mode of needing to borrow the coupling lens saves the manufacturing cost and the processing efficiency.
As shown in fig. 4, which is a module architecture diagram corresponding to the structure shown in fig. 3 after the improvement of the embodiment of the present invention, compared with the module architecture diagram in the prior art shown in fig. 1, the arrangement of the SOA in the architecture proposed in the embodiment of the present invention is more reasonable and the integration level is higher.
On the other hand, the embodiment of the invention also realizes the improvement of the control efficiency and the reduction of the production cost by manufacturing the first groove in the AWG, directly inversely welding the SOA chip 7 on the first groove of the AWG by the continuous devices needing two optical fiber sections in the prior art and adopting the mode of sharing the integrated TEC to complete the control of the respective temperature.
In combination with the embodiment of the present invention, since the SOA chip 7 is fabricated in the AWG6 in an embedded manner, compared with the prior art, in the embodiment of the present invention, only one top surface is left in a region where the SOA chip 7 is affected by the external temperature, and the other five surfaces are all located in a relatively adjacent spatial region of the AWG6, so that a more efficient TEC control effect can be obtained, and the stability and bandwidth characteristics of the amplification operation of the laser signal are greatly improved. Therefore, for the embedded SOA structure proposed in the embodiment of the present invention, there is also a preferred implementation of the corresponding thermistor, specifically, a second groove 32 is made on the AWG6 and located near the first groove 31, and the second thermistor 8 is disposed in the second groove 32; wherein the depth of the second groove 32 is such that the heat sensing region of the second thermistor 8 after completion of flip-chip bonding is at the same level as the waveguide of the AWG 6.
In order to further improve the optical coupling efficiency between the AWG6 and the SOA chip 7, there is a preferred implementation, as shown in fig. 5, in which the AWG6 is provided with a lens 10 on the side of the light exit surface of the first groove 31 for transmitting the condensed optical signal waveguide segment. In the embodiment of the present invention, the lens 10 may be a separate lens embedded in the AWG6 and located on the light exit surface side of the first groove 31, or may be fabricated by photolithography and etching (how to fabricate the lens in embodiments 2 and 3 of the present invention will be described in detail).
In the embodiment of the present invention, according to the structure manufactured in the embodiment of the present invention, the difference in surface height between the first cold surface and the second cold surface on the hot surface 21 of the common substrate can be smaller than 20 um.
In the embodiment of the present invention, the heat sink 4 is preferably made of an aluminum nitride ALN material.
Example 2:
the embodiment of the present invention focuses on the description of the method for manufacturing AWG6 in the multi-channel EML integrated component proposed in embodiment 1, where the AWG6 used in the embodiment of the present invention is an AWG6 base board that already has a complete optical waveguide structure, as shown in fig. 6, the method includes:
in step 201, a first mask is fabricated on the light-entering face of AWG6 base plate and a first round of etching is performed.
Wherein, the pattern of the first layer mask is a circular spot corresponding to the center of each lens in the lens array 9.
In step 202, after the first round of etching for a predetermined time is completed, a second mask is made on the light-in side of AWG6, and a second round of etching is performed.
In step 203, sequentially carrying out n-round corrosion to obtain a lens array 9; wherein, the diameter of the circular spot in the pattern of each layer of the mask increases along with the increasing of the layer number. Wherein n is a natural number.
The principle of the method for manufacturing the lens structure on the AWG6 light inlet surface is that the centers of all optical waveguides on the AWG6 light inlet surface are firstly aligned, and a mask pattern is manufactured on the centers of all the optical waveguides, wherein the mask pattern is designed into a plurality of circles with discrete row diameters according to the radian size of a lens surface and the smoothness degree of the radian, and the whole circle shows the continuity of the diameters. The lens structure completed by the embodiment of the invention is similar to a structure obtained by cutting the lens solid structure into pieces at equal intervals and then assembling the pieces.
It should be noted that the AWG6 with lens structure proposed by the embodiment of the present invention is essentially different from the prior art in which a separate lens is disposed between the laser and the AWG 6. First, the lens in the prior art needs to complete the coupling between the laser, the lens and the AWG6 waveguide based on active testing, but the embodiment of the present invention relies on the integrated TEC in embodiment 1, so as to solve the problem of coupling accuracy between the laser and the AWG6 on the Z axis, and achieve the coupling between the laser and the AWG6 in a passive environment after solving the problem of accuracy on the Z axis. Secondly, the lens in the prior art is used on the principle that a laser signal is converged on the optical waveguide of the AWG6, so that the setting angle and the position of the lens have extremely high requirements, and the lens in the embodiment of the invention is directly manufactured on the optical waveguide of the AWG6 light inlet surface, so that a certain error space is provided for the horizontal angle and/or the vertical height of the laser, namely, the lens is used for reducing the processing difficulty of an integrated assembly and improving the yield to a certain extent.
In the implementation of the embodiment of the present invention, the lens can be manufactured by time calculation, but in order to facilitate the precision of the operation and control in the manufacturing process and the availability of the manufacturing method in the new lens size, the embodiment of the present invention also provides a preferable control improvement scheme. Specifically, the manufacturing method further comprises the step of controlling the growth speed of the mask thickness and the corrosion speed of the light inlet surface of the AWG6 base plate in the corrosion solution, so that the speeds of the two meet a preset proportion; the manufacturing method further comprises:
and manufacturing the thickness and the corrosion depth of each layer of mask, and finishing according to the preset proportion, so that the lens array 9 after finishing each round of corrosion can be represented according to the preset proportion through the current mask graph.
As a complete AWG6 structure used in the embodiment of the present invention, in addition to the steps described in the above-mentioned steps 201-203, as shown in FIG. 7, the embodiment of the present invention further comprises:
in step 204, mask patterns of the first groove 31 and the second groove 32 are produced, and the first groove 31 and the second groove 32 are etched.
Wherein the first groove 31 is located in the AWG6 for transmitting the condensed optical signal waveguide segment; the second groove 32 is located in the vicinity of the first groove 31, and the depth of the second groove 32 is such that the heat sensing region of the second thermistor 8 after completion of flip-chip bonding is located on the same level as the waveguide of the AWG 6.
As for the preferred embodiment of embodiment 1, a lens is also formed on the light-emitting surface of the first groove 31, in the embodiment of the present invention, the execution sequence between the steps 201-203 and 204 is not strictly limited. For example: when the design requirement for fabricating the lens on the light exit surface of the first groove 31 is completed, the first groove 31 and the second groove 32 in the step 204 may be fabricated first, and then the lens fabrication of the light entrance surface of the AWG6 and the lens fabrication in the first groove 31 are completed through the steps 201 and 203, respectively.
In the embodiment of the present invention, since the SOA chip 7 and the thermistor are both advocated to be completed by flip-chip bonding, the power supply for the SOA chip 7 and the thermistor can be completed by gold wire bonding or by a conductive Metal layer (for example, the conductive Metal layer is completed by Metal Organic Chemical Vapor Deposition (MOCVD) after a mask layer of a conductive Metal layer pattern is made). Both ways are within the scope of the embodiments of the present invention.
Example 3:
focusing on the description of the method for fabricating AWG6 in a multi-channel EML integrated component as set forth in example 1, compared with fabricating lenses after the optical waveguide structure has been fabricated in example 2, the fabrication method as set forth in the present invention is introduced from the wafer processing process for fabricating AWG6, that is, the lens array is obtained by a growing method, rather than by an etching method as set forth in example 2, as shown in fig. 8, and the fabrication method includes:
in step 301, growing an AWG host material over the wafer;
in step 302, when the growing AWG body material has reached the predetermined thickness where the lens array is located at the lower edge of the AWG6, the mask pattern for the lens array on the AWG is started to be fabricated layer by layer.
The mask patterns of the AWG upper lens array are sequentially manufactured according to the area change rule of the cross section of the lens from large to small and from small to large. The change rule conforms to the change rule of the cross section of the lens in the vertical state.
Wherein, begin the mask figure of lens array on the layer-by-layer preparation AWG, specifically include:
in step 303, each time the growth of the AWG body material of the corresponding layer is made, the mask pattern of the corresponding layer is removed, and the making of a new layer of mask pattern and the growth of the AWG body material are started until the growth of the lens array is completed.
If it is considered that the first groove 31 structure, the second groove 32 structure, and the first groove 31 have the lens structure formed therein, as shown in fig. 9, the step 302 is again executed as:
in step 3021, the thickness of the AWG bulk material layer where the mask to be currently fabricated is located is determined, and it is determined whether one or more of the first groove 31 structure, the second groove 32 structure, and the lens structure in the first groove 31 need to be generated at the thickness.
In step 3022, if necessary, mask patterns are formed, the mask patterns for each object with a corresponding thickness are formed on the AWG body, and the AWG body material with a corresponding thickness is grown.
The first groove 31 structure, the second groove 32 structure and the lens structure in the first groove 31 have a growth stage which is needed independently (for example, the depth of the first groove 31 is larger than the depths of the lens array, the second groove 32 and the lens in the first groove 31, so that the area of the mask pattern which needs to be manufactured is the area of the first groove 31 which is inclined to the bottom), and also have a plurality of growth stages which are simultaneously carried out (for example, the lens structures in the first groove 31 structure, the second groove 32 structure, the lens array and the first groove 31 are usually covered partially on the horizontal area where the optical waveguide is located, so that the manufactured mask pattern comprises the pattern characteristics of the four structures under the corresponding thicknesses).
The above-described manner is equivalent to the completion of the lens structure in the first groove 31, the second groove 32, the first groove 31 by the control of the growth region during the growth of the AWG host material. In the practical implementation method, besides the first groove 31 and the second groove 32 obtained by the growth after masking, the embodiment of the present invention further provides another implementation method, which specifically includes:
making mask patterns of a first groove 31 and a second groove 32, and etching the first groove 31 and the second groove 32; wherein the first groove 31 is located in the AWG6 for transmitting the condensed optical signal waveguide segment; the second groove 32 is located in the vicinity of the first groove 31, and the depth of the second groove 32 is such that the heat sensing region of the second thermistor 8 after completion of flip-chip bonding is located on the same level as the waveguide of the AWG 6.
Compared with the former growth mode after the mask, the latter simplifies the mask manufacturing process, namely, mask patterns of the first groove 31 and the second groove 32 are required to be generated for multiple times, and the final stage is focused on completing the first groove 31 and the second groove 32 by only one-time mask etching. However, the latter approach also has its own drawbacks, namely, the inability to efficiently fabricate the lens in the first groove 31. Therefore, in combination with the embodiment of the present invention and the two methods for manufacturing the first groove 31, the second groove 32, and the lens in the first groove 31, there is also an optional implementation manner, that is, the manufacturing of the lens in the first groove 31 and the first groove 31 is completed by using the above-mentioned growth after masking, and the manufacturing of the second groove 32 is completed by using the etching after masking, so that the advantages of the two methods can be combined, and the production and processing efficiency is greatly improved.
Two alternative implementations are also provided for the growth of the optical waveguide region involved in the embodiments of the present invention, specifically set forth below:
the first method is as follows:
when the thickness of the AWG main body material reaches the preset region where the optical waveguide is located, the growth of the AWG main body material is stopped, and a first mask pattern of the optical waveguide is manufactured; the boundary of the first mask pattern of the optical waveguide and the region for manufacturing the lens array on the AWG have a preset distance, and the non-shielded region of the first mask pattern is a region of the optical waveguide to be grown;
after the optical waveguide is grown, removing the first mask pattern; and recovering the process of manufacturing the mask pattern of the lens array on the AWG layer by layer and the growth of the AWG main body material.
The second method comprises the following steps:
when the growing AWG main body material covers the preset region where the optical waveguide is located, the growing of the AWG main body material is stopped, and a second mask pattern of the optical waveguide is manufactured; the boundary of the second mask graph of the optical waveguide and the region for manufacturing the lens array on the AWG have a difference of a preset distance;
under the assistance of the second mask pattern, corroding an optical waveguide region for growing an optical waveguide material, and growing the optical waveguide material;
after the optical waveguide is grown, removing the second mask pattern; and recovering the process of manufacturing the mask pattern of the lens array on the AWG layer by layer and the growth of the AWG main body material.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A multi-channel EML integrated component is characterized by comprising a tube shell (1) and an integrated TEC (2), wherein the integrated TEC (2) comprises a hot surface (21) with a common substrate and two independent cold surfaces,
a first cold surface (22) of the two cold surface structures bears a heat sink (4), and a laser emission chip (5) and a first thermistor (3) are arranged on the heat sink (4);
a second cold surface (23) of the two cold surface structures bears an AWG (6), a lens array (9) is arranged on a light inlet surface of the AWG (6), a first groove (31) is arranged in a waveguide section used for transmitting converged optical signals in the AWG (6), and an SOA chip (7) is arranged in the first groove (31); wherein, the AWG (6) is also provided with a second thermistor (8);
the first thermistor (3), the second thermistor (8), a first loop formed by a first cold surface (22) and a first hot surface area (24) in the hot surface (21) of the common substrate, and a second loop formed by a second cold surface (23) and a second hot surface area (25) in the hot surface (21) of the common substrate are respectively connected with a temperature monitoring circuit;
the hot surface (21) is fixed on the inner wall of the pipe shell (1).
2. A multi-channel EML integrated component according to claim 1, characterized in that a second groove (32) is made on the AWG (6) and in the vicinity of the first groove (31), the second thermistor (8) being arranged in the second groove (32); wherein the depth of the second groove (32) is such that the heat sensing region of the second thermistor (8) after flip-chip bonding is at the same level as the waveguide of the AWG (6).
3. The multi-channel EML integrated component of claim 2, wherein a lens (10) is arranged in the AWG (6) on the side of the light exit surface of the first groove (31) for transmitting the condensed optical signal waveguide segments.
4. The multi-channel EML integrated component of any one of claims 1-3, wherein the difference in surface heights of the first and second cold faces above the hot face (21) of the common substrate is less than 20 um.
5. A multi-channel EML integrated component according to any of claims 1-3, characterized in that the lens array (9) is obtained by progressive mask etching after completion of the AWG optical waveguide structure; or,
the lens array (9) is grown from the mask during the fabrication of the AWG on the wafer.
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| CN108983372A (en) * | 2018-07-06 | 2018-12-11 | 烽火通信科技股份有限公司 | It is a kind of for converting the electricity into the optical device of light |
| CN109038209B (en) * | 2018-08-29 | 2020-04-14 | Oppo（重庆）智能科技有限公司 | Wafer level packaging method, laser module, camera assembly and electronic device |
| CN112379490B (en) * | 2020-11-16 | 2022-03-29 | 河北华美光电子有限公司 | Optical module |
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