CN107315288B - 一种阵列基板、液晶面板及其制作工艺 - Google Patents
一种阵列基板、液晶面板及其制作工艺 Download PDFInfo
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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Abstract
本申请公开了一种阵列基板、液晶面板及其制作工艺,用以解决由于配向膜受损导致非显示状态下液晶分子排列紊乱,从而导致液晶面板漏光的问题。本申请提供的阵列基板,包括配向膜,还包括:上电极、下电极,以及位于所述上电极和下电极之间的中间电极。所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
Description
技术领域
本申请涉及显示技术领域,尤其涉及一种阵列基板、液晶面板及其制作工艺。
背景技术
横向驱动的液晶显示器被广泛应用在各领域当中,但是横向驱动的液晶显示器在搬运和客户端的静压和动压测试中受斜向力容易产生蓝斑,严重影响产品良率。蓝斑产生是由于在受斜向外力时,处于显示区边缘的隔垫物划伤显示区的配向膜导致的。现有的液晶显示器,在非显示状态下无电压驱动,液晶分子由配向膜的配向方向引导排列,而当配向膜损伤,在非显示状态下液晶分子的排列将产生紊乱,形成漏光,而由于隔垫物通常设置在像素单元蓝色子像素的栅极线上,所以漏光现象通常表现为显示区的蓝斑。
发明内容
本申请实施例提供了一种阵列基板、液晶面板及其制作工艺,用以避免由于配向膜受损导致非显示状态下液晶分子排列紊乱,从而避免显示区漏光的问题,提高显示品质。
本申请实施例提供的一种阵列基板,包括配向膜,还包括:上电极、下电极,以及位于所述上电极和下电极之间的中间电极;其中,所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
本申请实施例提供的上述阵列基板,通过在上电极和下电极之间设置中间电极,使得在液晶面板非显示状态下,液晶盒内仍能形成平行于配向膜配向方向的电场引导液晶分子的排列,从而避免了在配向膜被隔垫物划伤的情况下,液晶面板在非显示状态时配向膜不能引导液晶分子按配向膜的配向方向排列,从而液晶分子排列产生紊乱,从而使显示区漏光的问题,提高显示品质,另一方面,本申请技术方案从改变液晶面板非显示状态下的液晶分子的排列入手,能从根本上改善蓝斑问题,能够在生产过程中就进行本质的改善,从而省去由于在机构端复杂的修改造成的人力和时间的浪费,并能减少对产线不必要的改建,从根本上解决在客户端的静压和动压测试过程中及产线组装过程中导致的蓝斑问题。
可选地,本申请实施例提供的上述阵列基板,所述上电极为条形的像素电极。
可选地,本申请实施例提供的上述阵列基板,所述中间电极包括多个条形电极。
可选地,本申请实施例提供的上述阵列基板,所述下电极为公共电极。
可选地,本申请实施例提供的上述阵列基板,所述中间电极位于显示区的预设范围内的边缘区域。
本申请实施例提供的上述阵列基板中,由于隔垫物设置在显示区的边缘区域,所以是配向膜被划伤的高发区,通过在边缘区域增加中间电极,可在液晶面板在非显示状态下,仍能产生平行于配向方向的电场,避免液晶分子的排列产生紊乱,从而使显示区漏光的问题,提高显示品质。
可选地,本申请实施例提供的上述阵列基板,所述预设范围内的边缘区域为距离显示区边缘0微米~50微米之间的区域。
可选地,本申请实施例提供的上述阵列基板,还包括:用于使得所述上电极、下电极、中间电极相互绝缘的绝缘层,所述绝缘层材料包括钛酸钡和聚酰亚胺的有机混合物。
本申请实施例提供的上述阵列基板中,通过在上电极、下电极、中间电极之间设置绝缘层,使得电极之间不会发生扰动,增加了结构的稳定性。
相应地,本申请实施例还提供一种液晶面板,包括上述任一项所述的阵列基板。
可选地,本申请实施例提供的上述液晶面板,还包括:驱动控制单元,用于在所述上电极和下电极之间相对电压为零的情况下,向所述中间电极施加驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
本申请实施例提供的上述液晶面板中,通过给中间电极设置单独的驱动控制单元,使得在液晶面板在非显示状态下,中间电极仍能施加驱动电压,产生平行于配向膜配向方向的电场,引导液晶分子的排列。
相应地,本申请实施例还提供一种阵列基板的制作工艺,包括制作配向膜的步骤,还包括:制作上电极、下电极,以及制作位于所述上电极层和下电极层之间的中间电极的步骤;其中,所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
附图说明
图1为本申请实施例提供的一种阵列基板的结构示意图之一;
图2为本申请实施例提供的一种阵列基板的结构示意图之二;
图3为本申请实施例提供的一种液晶面板的工作原理图之一;
图4为本申请实施例提供的一种液晶面板的工作原理图之二;
图5为本申请实施例提供的一种阵列基板的电极排列示意图;
图6为本申请实施例提供的一种阵列基板的实施区域示意图。
具体实施方式
为了使本申请的目的、技术方案和优点更加清楚,下面将结合附图对本申请作进一步地详细描述,显然,所描述的实施例仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本申请保护的范围。
附图中各部件的形状和大小不反映真实比例,目的只是示意说明本申请内容。
本申请实施例提供一种阵列基板,如图1(纵剖面)至图2(横剖面)所示,所述阵列基板1包括:配向膜03、上电极11、下电极12、以及位于上电极11和下电极12之间的中间电极13;其中,所述中间电极13用于在所述上电极11和下电极12之间相对电压为零的情况下,施加驱动电压,使得所述中间电极13与所述下电极之间12形成电场,并且所述电场的方向平行于所述配向膜的配向方向;其中,所述上电极11和所述中间电极13、所述中间电极13和所述下电极12之间还设置有绝缘层14。
本申请实施例中所述的纵剖面,是指在阵列基板的平面内沿着上电极的延伸方向进行剖面。
本申请实施例中所述的横剖面,是指在阵列基板的平面内沿着与上电极的延伸方向相垂直的方向进行剖面。
进一步地,在本申请实施例提供的上述阵列基板中,所述上电极11可以为形状是条形的像素电极。即上电极是现有技术中的多个条形的像素电极,用于在显示状态下,与公共电极配合形成电场,驱动液晶偏转。
进一步地,在本申请实施例提供的上述阵列基板中,所述下电极12可以为公共电极。即下电极是现有技术中的面状的公共电极。
进一步地,在本申请实施例提供的上述阵列基板中,所述中间电极13包括多个形状可以为条形的电极。
本申请实施例中,上电极和中间电极都是条状电极,上电极的延伸方向与中间电极的延伸方向相互垂直。
在液晶面板技术中,配向膜需要经过摩擦(Rubbing)处理,使配向膜表面具有配向纹,也就使得当液晶面板的电源关闭,像素电极和公共电极之间相对电压为零,没有电场引导液晶分子偏转时,液晶分子沿Rubbing方向(即配向方向)排列,有一定的倾斜角和方位角。而当在搬运或测试过程中,例如,液晶面板受到斜向作用力,导致配向膜被液晶面板中的隔垫物划伤时,由于配向膜表面的配向纹被破坏,液晶分子不再沿原来的Rubbing方向排列,产生紊乱的偏转角由液晶面板透过率公式:
T=T0Sin2(2Φ)Sin2(Δnd×π/λ),其中T0为归一化常数,d为液晶厚度,Δnd为液晶层厚带来的光程差;
正常情况下,即配向膜的配向纹未被破坏的情况下,当非显示状态时:
Δnd≠0,Φ=0;
经由以上问题产生的原因分析,举例说明本申请实施例提供的技术方案。
实施例一:
如图3(横剖面)所示,在液晶面板正常显示时,上电极11施加驱动电源Von,下电极12和中间电极13之间相对电压为0,这样在正常显示时,上电极11和下电极12形成边缘电场(如图3中箭头所示),电场的电场方向平行于阵列基板1,电场驱动液晶分子转动平行排列显示,可以达到宽视角和高对比度的显示效果。图3中01为彩膜(Color Filter,CF)基板,04为液晶分子,02为与下电极12相连的薄膜晶体管(Thin-Film Technology,TFT)基板,001为液晶面板正常显示状态下的驱动控制单元,此部分后续详述。
实施例二:
如图4(纵剖面)所示,在液晶面板非显示状态(L0态)时,上电极11和下电极12之间相对电压为0,中间电极13施加驱动电压Vx,较佳地,0<Vx<Von,在中间电极13和下电极12之间形成电场,电场方向平行于配向膜03的配向方向(如图4中箭头所示)。这样即使在配向膜03被划伤的情况下,在L0态时,仍可以产生电场引导液晶分子的排列,消除紊乱,从而改善或消除蓝斑。图4中001为液晶面板L0态下的驱动控制单元,此部分后续详述。
具体地,在本申请实施例提供的上述阵列基板中,如图5所示,上电极11和中间电极13的放置方式例如可以为相互垂直、且都平行于下电极12,当然,任一中间电极13与上电极11的放置方式只要可以使得中间电极13在L0态下能产生平行于配向方向的引导电场都是可行的,并不只限于一种放置方式,在此不做限定,可根据需要调整中间电极的放置位置和方式。
进一步地,在具体实施时,本申请实施例提供的上述阵列基板由于工作原理是增加一层中间电极13,用于在L0态时施加驱动电压,与下电极之间形成平行于配向方向的电场,所以本申请实施例提供的上述阵列基板,适用于所有的横向驱动的液晶面板,即驱动电场的电场方向平行于阵列基板的液晶面板,例如可以为横向电场效应显示技术(In-PlaneSwitching,IPS)液晶面板、高级超维场转换技术(Advanced Super Dimension Switch,ADS)液晶面板等。
进一步地,在具体实施时,在本申请实施例提供的上述阵列基板中,所述中间电极13材料可以为氧化铟锡(ITO)。
进一步地,在本申请实施例提供的上述阵列基板中,如图6所示,中间电极位于显示区的预设范围内的边缘区域04。图中61为栅极(Gate)线,62为数据(Data)线,63为薄膜晶体管单元,64为本申请实施区域,即显示区的边缘区域,66为隔垫物。由于隔垫物66通常设置在显示区的边缘区域64内,所以显示区的边缘区域64是配向膜损伤的高发区。因此,以在显示区的预设范围内的边缘区域64依次排列多个中间电极65为例,使得在L0态下中间电极65可施加电压Vx,产生电场,引导显示区的边缘区域64之中的液晶分子按配向膜的配向方向排列,避免配向膜被隔垫物划伤导致的液晶分子排列紊乱,从而避免漏光,提高显示品质。
进一步地,在具体实施时,在本申请实施例提供的上述阵列基板中,所述预设范围内的边缘区域,例如可以为距离显示区边缘0微米~50微米之间的区域。
进一步地,在本申请实施例提供的上述阵列基板中,如图1所示,所述阵列基板1还包括用于使得所述上电极11、下电极12、中间电极13相互绝缘的绝缘层14。
进一步地,在具体实施时,在本申请实施例提供的上述阵列基板中,所述绝缘层14的材料例如可以包括钛酸钡和聚酰亚胺的有机混合物,其中钛酸钡的含量为50%,介电常数为30。
基于同一发明构思,如图3和图4所示,本申请实施例还提供了一种液晶面板,包括本申请实施例提供的上述阵列基板1、位于阵列基板之上的CF基板01、以及位于阵列基板1和CF基板01之间的液晶分子04。在CF基板01面向阵列基板1的一侧,也设置有配向膜03。
进一步地,在本申请实施例提供的上述液晶面板中,所述液晶面板还包括两个独立的驱动控制单元,用于在正常显示状态下给上电极11供电,使上电极11和下电极12形成边缘电场,电场方向平行于阵列基板1;或在L0状态下给中间电极13供电,产生电场,电场方向平行于配向膜03的配向方向。
下面举例说明本申请实施例提供的上述液晶面板的驱动控制方式。
实施例一:
如图3所示,驱动控制单元001用于在液晶面板正常显示时,给液晶面板提供驱动电压,使得上电极11施加驱动电源Von,下电极12和中间电极13之间相对电压为0,这样在正常显示时,上电极11和下电极12形成边缘电场(如图3中箭头所示),电场的电场方向平行于阵列基板1,电场驱动液晶分子转动平行排列显示,可以达到宽视角和高对比度的显示效果。
实施例二:
如图4所示,驱动控制单元002用于在液晶面板处于L0态时,给中间电极13提供电压,使得中间电极13施加驱动电压Vx,上电极11和下电极12之间相对电压为0,产生电场,电场方向平行于配向膜03的配向方向(如4图中箭头所示)。这样即使在配向膜03被划伤的情况下,在L0态时,仍可以产生电场引导液晶分子的排列,消除紊乱,从而改善或消除蓝斑。
其中,所述驱动控制单元001和驱动控制单元002可以为同一驱动控制单元,也可以为不同的驱动控制单元,也就是说同一液晶显示面板,可以同时包括两个驱动IC,分别控制正常显示模式下的电极驱动,和L0模式下的电极驱动。也可以只包括一个驱动IC,该驱动IC即可以实现正常显示模式下的电极驱动,还可以实现L0模式下的电极驱动。
总之,本申请实施例上述技术方案对液晶面板在正常显示和L0态时分开进行驱动控制,实现L0态下对液晶面板单独驱动,使得两个状态下电场互不干扰,提高了液晶面板显示的稳定性。
基于同一发明构思,本申请实施例还提供了一种阵列基板制作工艺,包括制作配向膜的步骤,还包括:制作上电极、下电极,以及制作位于所述上电极层和下电极层之间的中间电极的步骤;其中,所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
进一步地,在具体实施时,在本申请实施例提供的上述阵列基板制作工艺中,下电极12的制作方式例如可以为溅射(Sputter)镀膜工艺;制作上电极11和中间电极13的材料例如可以为条形(Slit)的氧化铟锡(ITO),制作方式例如可以为溅射(Sputter)镀膜工艺,经光刻胶涂覆后曝光,并刻蚀后形成像素边缘的Slit ITO电极;在上电极11和中间电极13之间、下电极13和中间电极13之间,均有一层高介电常数聚合物绝缘层14,制作工艺例如可以为等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition,PECVD)。
本申请公开了一种阵列基板、液晶面板及其制作工艺,通过在上电极和下电极之间新增中间电极,并对液晶面板正常显示状态和非显示状态分开驱动,实现了对非显示状态下液晶分子的单独驱动,从而使得液晶面板在非显示状态仍能产生电场引导液晶分子按配向膜的配向方向排列,从而避免了在配向膜被隔垫物划伤的情况下,液晶面板非显示状态下配向膜不能引导液晶分子按配向膜的配向方向排列,从而液晶分子排列产生紊乱,从而使显示区漏光的问题,提高显示品质;另一方面,本申请技术方案从改变液晶面板非显示状态下的液晶分子的排列入手,能从根本上改善蓝斑问题,能够在生产过程中就进行本质的改善,从而省去由于在机构端复杂的修改造成的人力和时间的浪费,并能减少对产线不必要的改建,从根本上解决客户端的静压和动压测试及产线组装导致的蓝斑问题。
显然,本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样,倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内,则本申请也意图包含这些改动和变型在内。
Claims (6)
1.一种阵列基板,包括配向膜,其特征在于,还包括:
薄膜晶体管基板;
位于所述薄膜晶体管基板上方的下电极;
位于所述下电极背离所述薄膜晶体管基板一侧且与所述下电极接触的第一绝缘层;
位于所述第一绝缘层背离所述下电极一侧且与所述第一绝缘层接触的中间电极;
位于所述中间电极背离所述第一绝缘层一侧且与所述中间电极接触的第二绝缘层;
位于所述第二绝缘层背离所述中间电极一侧且与所述第二绝缘层接触的上电极,所述配向 膜位于所述上电极背离所述第二绝缘层一侧;
位于所述配向膜背离所述上电极一侧的液晶层;
其中,所述下电极为平面公共电极,所述上电极和所述中间电极为相互垂直的条形的像素电极;
其中,所述中间电极位于显示区的预设范围内的边缘区域,所述边缘区域设置有隔垫物;
其中,当包括所述阵列基板的液晶面板处于显示状态时,所述上电极用于在所述中间电极和所述下电极之间相对电压为零的情况下,施加第一驱动电压,使得所述上电极和所述下电极之间形成边缘电场,且所述边缘电场的方向平行于所述配向膜的配向方向,以使所述液晶层中液晶分子的排列方向与所述配向膜的配向方向平行;
其中,当包括所述阵列基板的液晶面板处于非显示状态时,所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加第二驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向,以使所述液晶层中液晶分子的排列方向保持与所述配向膜的配向方向平行。
2.如权利要求1所述的阵列基板,其特征在于,所述预设范围内的边缘区域为距离显示区边缘0微米~50微米之间的区域。
3.如权利要求1所述的阵列基板,其特征在于,所述绝缘层材料包括钛酸钡和聚酰亚胺的有机混合物。
4.一种液晶面板,其特征在于,包括如权利要求1-3任一项所述的阵列基板。
5.如权利要求4所述的液晶面板,其特征在于,还包括:驱动控制单元,用于在所述上电极和下电极之间相对电压为零的情况下,向所述中间电极施加第二驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向。
6.一种阵列基板的制作工艺,包括制作配向膜的步骤,其特征在于,还包括:制作薄膜晶体管基板;
在所述薄膜晶体管基板上形成下电极;
在所述下电极上形成第一绝缘层,所述第一绝缘层与所述下电极接触;
在所述第一绝缘层上形成中间电极,所述中间电极与所述第一绝缘层接触;
在所述中间电极上形成第二绝缘层,所述第二绝缘层与所述第一绝缘层接触;
在所述第二绝缘层上形成上电极,所述上电极与所述第二绝缘层接触;
在所述上电极上形成配向膜;
在所述配向膜上形成液晶层;
其中,所述下电极为平面公共电极,所述上电极和所述中间电极为相互垂直的条形的像素电极;
其中,所述中间电极位于显示区的预设范围内的边缘区域,所述边缘区域设置有隔垫物;
其中,当包括所述阵列基板的液晶面板处于显示状态时,所述上电极用于在所述中间电极和所述下电极之间相对电压为零的情况下,施加第一驱动电压,使得所述上电极和所述下电极之间形成边缘电场,且所述边缘电场的方向平行于所述配向膜的配向方向,以使所述液晶层中液晶分子的排列方向与所述配向膜的配向方向平行;
其中,当包括所述阵列基板的液晶面板处于非显示状态时,所述中间电极用于在所述上电极和下电极之间相对电压为零的情况下,施加第二驱动电压,使得所述中间电极与所述下电极之间形成电场,并且所述电场的方向平行于所述配向膜的配向方向,以使所述液晶层中液晶分子的排列方向保持与所述配向膜的配向方向平行。
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