CN107293536A - light emitting diode packaging structure and manufacturing method thereof - Google Patents
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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Abstract
Description
本申请是2012年6月13日申请的,申请号为“201210194908.1”,发明名称为“发光二极管封装结构及其制作方法”的中国发明专利申请的分案申请This application was filed on June 13, 2012, with the application number "201210194908.1" and the divisional application of the Chinese invention patent application titled "Light-emitting diode packaging structure and its manufacturing method"
技术领域technical field
本发明是有关于一种封装结构及其制作方法,且特别是有关于一种发光二极管封装结构及其制作方法。The present invention relates to a packaging structure and a manufacturing method thereof, and in particular to a light emitting diode packaging structure and a manufacturing method thereof.
背景技术Background technique
发光二极管是一种由含有III-Ⅴ族元素的半导体材料所构成的发光元件,且发光二极管具有诸如寿命长、体积小、高抗震性、低热产生及低功率消耗等优点,因此已被广泛应用于家用及各种设备中的指示器或光源。近年来,发光二极管已朝多色彩及高亮度发展,因此其应用领域已扩展至大型户外看板、交通号志灯及相关领域。在未来,发光二极管甚至可能成为兼具省电及环保功能的主要照明光源。Light-emitting diode is a light-emitting element composed of semiconductor materials containing III-V elements, and light-emitting diodes have advantages such as long life, small size, high shock resistance, low heat generation and low power consumption, so they have been widely used Indicators or light sources in household and various equipment. In recent years, light-emitting diodes have developed towards multi-color and high brightness, so their application fields have been extended to large outdoor signage, traffic lights and related fields. In the future, light-emitting diodes may even become the main lighting source with both power saving and environmental protection functions.
举例而言,以目前高功率白光发光二极管的封装方式大多数是采用蓝光发光二极管并搭配黄色萤光粉的使用而成。白光发光二极管的所以发白光是因为其发光二极管芯片发出蓝光,蓝光通过黄色萤光粉后会被转换成黄光,而被黄色萤光粉转换成的黄光与没被转换的蓝光即混合成白光。由于发光二极管所发出的蓝光具有一定程度的指向性,这会使得以较大角度偏离光轴的蓝光的光强度较弱,进而使得以较大角度偏离光轴的黄光的强度大于蓝光的强度。如此一来,会使得照明灯具的照射范围的边缘产生黄晕。此外,采用蓝光二极管并搭配黄色萤光粉的白光发光二极管往往在制程上会因为黄色萤光粉在芯片上分布不均,也使得其出射的白光外围会分布一圈黄光,即黄晕现象(yellowish halo),以致于影响白光发光二极管所发出的光的颜色均匀度。For example, most of the current packaging methods for high-power white light emitting diodes use blue light emitting diodes combined with yellow phosphors. White light-emitting diodes emit white light because their light-emitting diode chips emit blue light. After the blue light passes through the yellow phosphor, it will be converted into yellow light, and the yellow light converted by the yellow phosphor is mixed with the unconverted blue light. white light. Since the blue light emitted by the light-emitting diode has a certain degree of directivity, the light intensity of the blue light that deviates from the optical axis at a larger angle is weaker, and the intensity of the yellow light that deviates from the optical axis at a larger angle is greater than that of the blue light. . In this way, a yellow halo will be produced at the edge of the illumination range of the lighting fixture. In addition, white light emitting diodes that use blue light diodes and yellow phosphor powder are often unevenly distributed on the chip due to the uneven distribution of yellow phosphor powder in the manufacturing process, which also causes a circle of yellow light around the periphery of the emitted white light, which is the yellow halo phenomenon. (yellowish halo), so as to affect the color uniformity of the light emitted by the white light emitting diode.
因此,过去为了解决黄晕的问题通常会在萤光粉中添加增白剂来降低黄晕的发生,其中增白剂例如是白色微粒或是玻璃微粒,如此可以散射发光二极管的光束降低黄晕的程度。相对地,增白剂的添加却往往会牺牲了发光二极管整体的出光效率,并且在演色性的表现上也无法产生任何提升的效果。Therefore, in the past, in order to solve the problem of yellow halo, whitening agents were usually added to phosphors to reduce the occurrence of yellow halos. The whitening agents are white particles or glass particles, which can scatter the light beams of LEDs and reduce yellow halos. Degree. In contrast, the addition of whitening agents often sacrifices the overall light extraction efficiency of the LED, and cannot produce any improvement in the performance of color rendering.
发明内容Contents of the invention
本发明提供一种发光二极管封装结构,其可呈现出较佳的光学表现。The invention provides a light emitting diode packaging structure, which can exhibit better optical performance.
本发明提供一种发光二极管封装结构的制作方法,用以制作上述的发光二极管封装结构。The present invention provides a method for manufacturing a light emitting diode packaging structure, which is used to manufacture the above light emitting diode packaging structure.
本发明提出一种发光二极管封装结构,其包括一承载器、至少一个发光二极管芯片、一第一环形挡墙、一第二环形挡墙以及一萤光胶体。承载器具有一承载区以及一围绕承载区的周边区。发光二极管芯片配置于承载器的承载区内,且电性连接至承载器。第一环形挡墙配置于承载器的周边区内,且围绕发光二极管芯片。第二环形挡墙配置于第一环形挡墙的内侧,且围绕发光二极管芯片,其中所述第二环形挡墙的高度低于第一环形挡墙的高度。而,萤光胶体配置于承载器上且至少覆盖发光二极管芯片与第二环形挡墙,其中所述萤光胶体包括至少一种萤光粉及至少一种胶体,而所述萤光粉分布于发光二极管芯片的表面上。The invention provides a light emitting diode packaging structure, which includes a carrier, at least one light emitting diode chip, a first annular retaining wall, a second annular retaining wall and a fluorescent colloid. The carrier has a carrying area and a peripheral area surrounding the carrying area. The light emitting diode chip is arranged in the carrying area of the carrier and is electrically connected to the carrier. The first annular retaining wall is disposed in the peripheral area of the carrier and surrounds the LED chip. The second annular retaining wall is disposed inside the first annular retaining wall and surrounds the LED chip, wherein the height of the second annular retaining wall is lower than that of the first annular retaining wall. And, the fluorescent colloid is arranged on the carrier and at least covers the light-emitting diode chip and the second annular retaining wall, wherein the fluorescent colloid includes at least one phosphor powder and at least one colloid, and the phosphor powder is distributed on the on the surface of the LED chip.
本发明另一实施例中,所述的第一环形挡墙与第二环形挡墙之间具有一间距,且在承载器上定义一凹槽,所述萤光胶体填充于凹槽。In another embodiment of the present invention, there is a distance between the first annular retaining wall and the second annular retaining wall, and a groove is defined on the carrier, and the fluorescent colloid is filled in the groove.
本发明又一实施例中,所述的承载器与第一环形挡墙或第二环形挡墙一体成型。In yet another embodiment of the present invention, the carrier is integrally formed with the first annular retaining wall or the second annular retaining wall.
本发明又一实施例中,所述的第一环形挡墙或第二环形挡墙为一不连续的环形挡墙。In yet another embodiment of the present invention, the first annular retaining wall or the second annular retaining wall is a discontinuous annular retaining wall.
本发明又一实施例中,所述的发光二极管封装结构更包括多个条形挡墙。所述条形挡墙配置于承载器上且连接所述第二环形挡墙,其中所述条形挡墙与第二环形挡墙在承载器上定义出多个格子状凹槽,而发光二极管芯片设置于所述格子状凹槽内。In yet another embodiment of the present invention, the LED packaging structure further includes a plurality of strip-shaped retaining walls. The strip-shaped retaining wall is arranged on the carrier and connected to the second annular retaining wall, wherein the strip-shaped retaining wall and the second annular retaining wall define a plurality of grid-shaped grooves on the carrier, and the light-emitting diodes The chip is arranged in the grid-shaped groove.
本发明提出另一种发光二极管封装结构,其包括一承载器、多个发光二极管芯片、一环形挡墙、多个条形挡墙以及一萤光胶体。发光二极管芯片配置于承载器上,且电性连接至承载器。环形挡墙配置于承载器上,且围绕发光二极管芯片。所述条形挡墙配置于承载器上且连接环形挡墙,其中条形挡墙与环形挡墙在承载器上定义出多个格子状凹槽,而发光二极管芯片设置于格子状凹槽内。萤光胶体配置于承载器上,且填充于格子状凹槽中并至少覆盖发光二极管芯片,其中萤光胶体包括至少一种萤光粉及至少一种胶体,且萤光粉分布于发光二极管芯片的表面上。The present invention proposes another LED packaging structure, which includes a carrier, a plurality of LED chips, a ring-shaped retaining wall, a plurality of strip-shaped retaining walls, and a fluorescent colloid. The LED chip is disposed on the carrier and electrically connected to the carrier. The annular retaining wall is configured on the carrier and surrounds the LED chips. The strip-shaped retaining wall is arranged on the carrier and connected to the annular retaining wall, wherein the strip-shaped retaining wall and the annular retaining wall define a plurality of grid-shaped grooves on the carrier, and the LED chips are arranged in the lattice-shaped grooves . The fluorescent colloid is arranged on the carrier, filled in the grid-shaped grooves and covers at least the light-emitting diode chip, wherein the fluorescent colloid includes at least one phosphor powder and at least one colloid, and the phosphor powder is distributed on the light-emitting diode chip on the surface.
本发明又一实施例中,所述的多个条形挡墙彼此相连而定义出多个次环形挡墙,其中所述多个次环形挡墙配置于承载器上且其分别围绕发光二极管芯片。In yet another embodiment of the present invention, the plurality of strip-shaped retaining walls are connected to each other to define a plurality of sub-annular retaining walls, wherein the plurality of sub-annular retaining walls are arranged on the carrier and respectively surround the light-emitting diode chips .
本发明又一实施例中,所述的环状挡墙的高度与每一条形挡墙的高度相同。In yet another embodiment of the present invention, the height of the annular retaining wall is the same as that of each strip retaining wall.
本发明又一实施例中,所述的每一条形挡墙的高度低于环状挡墙的高度。In yet another embodiment of the present invention, the height of each strip-shaped retaining wall is lower than that of the annular retaining wall.
本发明又一实施例中,所述的承载器与环形挡墙或条形挡墙一体成型。In yet another embodiment of the present invention, the carrier is integrally formed with the annular retaining wall or the strip-shaped retaining wall.
本发明又一实施例中,所述的发光二极管芯片系透过倒装焊技术与承载器电性连接。In yet another embodiment of the present invention, the light-emitting diode chip is electrically connected to the carrier through flip-chip bonding technology.
本发明又一实施例中,所述的发光二极管芯片系透过打线接合技术与承载器电性连接。In yet another embodiment of the present invention, the LED chip is electrically connected to the carrier through wire bonding technology.
本发明又一实施例中,所述的承载器的材质包括陶瓷、高分子聚合物或金属。In yet another embodiment of the present invention, the material of the carrier includes ceramics, polymers or metals.
本发明又一实施例中,所述的第一环形挡墙的材质与第二环形挡墙的材质包括硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属。In yet another embodiment of the present invention, the material of the first annular retaining wall and the second annular retaining wall include silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal.
本发明提出一种发光二极管封装结构的制作方法,其包括以下步骤。提供一承载器,其中承载器具有一承载区以及一围绕承载区的周边区。配置至少一个发光二极管芯片于承载器的承载区内,且发光二极管芯片电性连接至承载器。形成一第一环形挡墙于承载器的周边区内。形成一第二环形挡墙于承载器的周边区内,其中第二环形挡墙围绕发光二极管芯片并设置于第一环形挡墙的内侧,且第二环形挡墙的高度低于第一环形挡墙的高度。填充一萤光胶体于承载器上以至少覆盖发光二极管芯片与第二环形挡墙,其中所述萤光胶体包括至少一种萤光粉及至少一种胶体混合而成,且萤光粉散布于胶体内。之后,进行一离心程序,以使萤光胶体中的萤光粉沉降于发光二极管芯片的表面上。最后,放置烤箱进行烘烤定形。The invention provides a method for manufacturing a light-emitting diode packaging structure, which includes the following steps. A carrier is provided, wherein the carrier has a carrying area and a peripheral area surrounding the carrying area. At least one light-emitting diode chip is arranged in the carrying area of the carrier, and the light-emitting diode chip is electrically connected to the carrier. A first annular retaining wall is formed in the peripheral area of the carrier. A second annular retaining wall is formed in the peripheral area of the carrier, wherein the second annular retaining wall surrounds the LED chip and is arranged inside the first annular retaining wall, and the height of the second annular retaining wall is lower than the first annular retaining wall the height of the wall. Filling a fluorescent colloid on the carrier to at least cover the light-emitting diode chip and the second annular retaining wall, wherein the fluorescent colloid includes at least one kind of fluorescent powder mixed with at least one colloid, and the fluorescent powder is dispersed on the colloid. Afterwards, a centrifugation process is performed to make the fluorescent powder in the fluorescent colloid settle on the surface of the LED chip. Finally, place the oven for baking and setting.
本发明另一实施例中,所述的第一环形挡墙与第二环形挡墙之间具有一间距,在承载器上定义一凹槽,且萤光胶体填充于凹槽。In another embodiment of the present invention, there is a distance between the first annular retaining wall and the second annular retaining wall, a groove is defined on the carrier, and the fluorescent colloid is filled in the groove.
本发明另一实施例中,所述的发光二极管封装结构的制作方法,还包括:形成多个条形挡墙,配置于承载器上且连接第二环形挡墙,其中所述条形挡墙与第二环形挡墙在承载器上定义出多个格子状凹槽,而所述发光二极管芯片设置于所述格子状凹槽内。In another embodiment of the present invention, the manufacturing method of the LED packaging structure further includes: forming a plurality of strip-shaped retaining walls, which are arranged on the carrier and connected to the second annular retaining wall, wherein the strip-shaped retaining walls A plurality of grid-shaped grooves are defined on the carrier together with the second annular retaining wall, and the light-emitting diode chips are arranged in the grid-shaped grooves.
本发明另一实施例中,所述的承载器与第一环形挡墙或第二环形挡墙一体成型。In another embodiment of the present invention, the carrier is integrally formed with the first annular retaining wall or the second annular retaining wall.
本发明另一实施例中,所述的第一环形挡墙或第二环形挡墙为不连续的环形挡墙。In another embodiment of the present invention, the first annular retaining wall or the second annular retaining wall is a discontinuous annular retaining wall.
本发明再提出一种发光二极管封装结构的制作方法,其包括以下步骤。提供一承载器。配置多个发光二极管芯片于承载器上,且发光二极管芯片电性连接至承载器。形成一环形挡墙于承载器上,其中环形挡墙围绕发光二极管芯片。形成多个条形挡墙于承载器上,其中条形挡墙连接环形挡墙,且条形挡墙与环形挡墙在承载器上定义出多个格子状凹槽,而发光二极管芯片设置于格子状凹槽内。填充一萤光胶体于承载器的一承载区内,其中萤光胶体填满格子状凹槽且至少覆盖发光二极管芯片,萤光胶体包括至少一种萤光粉及至少一种胶体混合而成,且萤光粉分散于胶体内。进行一离心程序以使萤光胶体中的萤光粉沉降于发光二极管芯片的表面上。最后,放置一烤箱进行一烘烤程序。The present invention further proposes a method for manufacturing a light emitting diode packaging structure, which includes the following steps. A carrier is provided. A plurality of LED chips are arranged on the carrier, and the LED chips are electrically connected to the carrier. An annular retaining wall is formed on the carrier, wherein the annular retaining wall surrounds the LED chip. A plurality of strip-shaped retaining walls are formed on the carrier, wherein the strip-shaped retaining walls are connected to the annular retaining wall, and the strip-shaped retaining walls and the annular retaining wall define a plurality of grid-like grooves on the carrier, and the LED chips are arranged on In the lattice groove. Filling a fluorescent colloid in a loading area of the carrier, wherein the fluorescent colloid fills the grid-shaped grooves and at least covers the light-emitting diode chip, and the fluorescent colloid is formed by mixing at least one phosphor powder and at least one colloid, And the fluorescent powder is dispersed in the colloid. A centrifugation process is performed to settle the fluorescent powder in the fluorescent colloid on the surface of the LED chip. Finally, an oven is placed to perform a baking procedure.
本发明另一实施例中,所述的条形挡墙彼此相连而定义出多个次环形挡墙,其中所述多个次环形挡墙配置于承载器上且其分别围绕发光二极管芯片。In another embodiment of the present invention, the strip-shaped retaining walls are connected to each other to define a plurality of sub-annular retaining walls, wherein the plurality of sub-annular retaining walls are disposed on the carrier and respectively surround the LED chips.
本发明另一实施例中,所述的填充萤光胶体于承载器的承载区的步骤,包括:将萤光胶体依序填入格子状凹槽,使萤光胶体的一上表面与环状挡墙的一顶面及每一条形挡墙的一顶面高度相同。In another embodiment of the present invention, the step of filling the fluorescent colloid in the carrying area of the carrier includes: filling the fluorescent colloid into the grid-shaped grooves in sequence, so that an upper surface of the fluorescent colloid is in contact with the annular groove. A top surface of the retaining wall and a top surface of each strip retaining wall have the same height.
本发明另一实施例中,所述的填充萤光胶体于承载器的承载区的步骤,包括:将萤光胶体任意填入一部分的格子状凹槽;以及进行一离心程序,以使萤光胶体向两侧流动以填满格子状凹槽,且萤光胶体覆盖于每一条形挡墙的一顶面。In another embodiment of the present invention, the step of filling the fluorescent colloid in the carrying area of the carrier includes: randomly filling the fluorescent colloid into a part of the grid-shaped grooves; and performing a centrifugation procedure to make the fluorescent colloid The colloid flows to both sides to fill the grid-shaped grooves, and the fluorescent colloid covers a top surface of each bar-shaped retaining wall.
本发明另一实施例中,所述的承载器与环形挡墙或条形挡墙一体成型。In another embodiment of the present invention, the carrier is integrally formed with the annular retaining wall or the strip-shaped retaining wall.
本发明另一实施例中,所述的环形挡墙为不连续的环形挡墙。In another embodiment of the present invention, the annular retaining wall is a discontinuous annular retaining wall.
本发明另一实施例中,所述的发光二极管封装结构的制作方法,其中配置每一发光二极管芯片于承载器上的方法系透过倒装焊技术与承载器电性连接。In another embodiment of the present invention, in the manufacturing method of the light-emitting diode packaging structure, the method of arranging each light-emitting diode chip on the carrier is electrically connected to the carrier through flip-chip welding technology.
本发明另一实施例中,所述的发光二极管封装结构的制作方法,其中配置每一发光二极管芯片于承载器上的方法系透过打线接合技术与承载器电性连接。In another embodiment of the present invention, in the manufacturing method of the light-emitting diode packaging structure, the method of arranging each light-emitting diode chip on the carrier is to electrically connect with the carrier through wire bonding technology.
本发明另一实施例中,所述的承载器的材质包括陶瓷、高分子聚合物或金属。In another embodiment of the present invention, the material of the carrier includes ceramics, polymers or metals.
本发明另一实施例中,所述的第一环形挡墙的材质与第二环形挡墙的材质包括硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属。In another embodiment of the present invention, the material of the first annular retaining wall and the second annular retaining wall include silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal.
基于上述,由于本发明的发光二极管封装结构具有第一环形挡墙与第二环形挡墙的设计,且萤光胶体的萤光粉是分布至发光二极管芯片的表面上,因此可有效避免发光二极管封装结构边壁黄晕现象的发生且可有效提升整体的发光效率。Based on the above, since the light-emitting diode packaging structure of the present invention has the design of the first annular retaining wall and the second annular retaining wall, and the phosphor powder of the fluorescent colloid is distributed on the surface of the light-emitting diode chip, it can effectively avoid the light-emitting diode The occurrence of the yellow halo phenomenon on the side wall of the packaging structure can effectively improve the overall luminous efficiency.
附图说明Description of drawings
为让本发明的上述目的、特征和优点能更明显易懂,以下结合附图对本发明的具体实施方式作详细说明,其中:In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:
图1A为本发明的一实施例的一种发光二极管封装结构的剖面示意图。FIG. 1A is a schematic cross-sectional view of an LED packaging structure according to an embodiment of the present invention.
图1B为图1A的发光二极管封装结构的俯视示意图。FIG. 1B is a schematic top view of the LED package structure in FIG. 1A .
图1C为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。FIG. 1C is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention.
图1D为本发明的一实施例的一种发光二极管封装结构的俯视示意图。FIG. 1D is a schematic top view of a LED packaging structure according to an embodiment of the present invention.
图2A为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。FIG. 2A is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention.
图2B为图2A的发光二极管封装结构的俯视示意图。FIG. 2B is a schematic top view of the LED package structure in FIG. 2A .
图2C为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。FIG. 2C is a schematic cross-sectional view of an LED packaging structure according to another embodiment of the present invention.
图3为本发明的一实施例的一种发光二极管封装结构的制作方法的流程示意图。FIG. 3 is a schematic flowchart of a manufacturing method of a light emitting diode packaging structure according to an embodiment of the present invention.
图4A为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。FIG. 4A is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention.
图4B为图4A的发光二极管封装结构的俯视示意图。FIG. 4B is a schematic top view of the LED package structure in FIG. 4A .
图4C为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。FIG. 4C is a schematic cross-sectional view of an LED packaging structure according to another embodiment of the present invention.
图4D为本发明的另一实施例的一种发光二极管封结构的俯视示意图。FIG. 4D is a schematic top view of a light emitting diode package structure according to another embodiment of the present invention.
图5为本发明的另一实施例的一种发光二极管封装结构的制作方法的流程示意图。FIG. 5 is a schematic flowchart of a method for manufacturing a light emitting diode packaging structure according to another embodiment of the present invention.
主要元件符号说明:Description of main component symbols:
100a、100b、100c、100d、100e、100f、100g、100h:发光二极管封装结构100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h: LED packaging structure
110、110a:承载器110, 110a: carrier
112:承载区112: Bearing area
114:周边区114: Surrounding area
120a、120b:发光二极管芯片120a, 120b: LED chips
125:导线125: wire
130a:第一环形挡墙130a: First circular retaining wall
130b:次环形挡墙130b: Secondary ring retaining wall
130c:环形挡墙130c: Ring retaining wall
131:顶面131: top surface
132:顶表面132: top surface
140a、140b:第二环形挡墙140a, 140b: second annular retaining wall
140c、140d、140e:条形挡墙140c, 140d, 140e: strip retaining wall
141、143:顶面141, 143: top surface
150:萤光胶体150: fluorescent colloid
151:上表面151: upper surface
152:萤光粉152: fluorescent powder
154:胶体154: colloid
C、C’:格子状凹槽C, C': lattice groove
D:间距D: Spacing
H1、H2、H3、H4:高度H1, H2, H3, H4: Height
S10~S16、S20~S26:步骤S10~S16, S20~S26: steps
U:凹槽U: Groove
具体实施方式detailed description
图1A为本发明的一实施例的一种发光二极管封装结构的剖面示意图。图1B为图1A的发光二极管封装结构的俯视示意图。请同时参考图1A与图1B,在本实施例中,发光二极管封装结构100a包括一承载器110、至少一个发光二极管芯片120a(图1A与图1B中仅示意地绘示一个)、一第一环形挡墙130a、一第二环形挡墙140a以及一萤光胶体150。FIG. 1A is a schematic cross-sectional view of an LED packaging structure according to an embodiment of the present invention. FIG. 1B is a schematic top view of the LED package structure in FIG. 1A . Please refer to FIG. 1A and FIG. 1B at the same time. In this embodiment, the LED packaging structure 100a includes a carrier 110, at least one LED chip 120a (only one is schematically shown in FIG. 1A and FIG. 1B ), a first The annular retaining wall 130 a , a second annular retaining wall 140 a and a fluorescent glue 150 .
详细来说,承载器110具有一承载区112以及一围绕承载区112的周边区114。此处,承载器110的材质例如是陶瓷、高分子聚合物、硅、碳化硅、绝缘材料或金属,其中当承载器110的材质为金属时,承载器110可为一铜基板或一金属核心印刷电路板(Metal CorePrinted Circuit Board,MCPCB),但并不以此为限。In detail, the carrier 110 has a carrying area 112 and a peripheral area 114 surrounding the carrying area 112 . Here, the material of the carrier 110 is, for example, ceramics, high molecular polymer, silicon, silicon carbide, insulating material or metal, wherein when the material of the carrier 110 is metal, the carrier 110 can be a copper substrate or a metal core Printed circuit board (Metal Core Printed Circuit Board, MCPCB), but not limited thereto.
发光二极管芯片120a配置于承载器110的承载区112内,且电性连接至承载器110。在本实施例中,发光二极管芯片120a系透过倒装焊技术与承载器110电性连接。也就是说,本实施例的发光二极管封装结构100为一表面粘着型态(surface mounted device type,SMD type)的发光二极管封装结构。此处的发光二极管芯片120a是以蓝光发光二极管芯片为举例说明,但并不以此为限。The LED chip 120 a is disposed in the carrying area 112 of the carrier 110 and is electrically connected to the carrier 110 . In this embodiment, the LED chip 120a is electrically connected to the carrier 110 through the flip-chip bonding technique. That is to say, the LED packaging structure 100 of this embodiment is a surface mounted device type (SMD type) LED packaging structure. Here, the LED chip 120a is illustrated by taking a blue LED chip as an example, but not limited thereto.
第一环形挡墙130a配置于承载器110的周边区114内,且围绕发光二极管芯片120a。第二环形挡墙140a配置第一环形挡墙130a的内侧,亦位于承载器110的周边区114内,且围绕发光二极管芯片120。特别是,在本实施例中,第二环形挡墙140a设置于发光二极管芯片120a与第一环形挡墙130a之间,且第二环形挡墙140a的高度H2低于第一环形挡墙130a的高度H1。此外,第一环形挡墙130a的材质与第二环形挡墙140a的材质例如是硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属,其中第一环形挡墙130a的材质可与第二环形挡墙140a的材质相同或不同,于此并不加以限制。再者,本实施例的第一环形挡墙130a与第二环形挡墙140a皆具有不吸光且具有反射功能的特性。此处,第一环形挡墙130a与第二环形挡墙140a皆为一连续的环形挡墙。The first annular retaining wall 130a is disposed in the peripheral region 114 of the carrier 110 and surrounds the LED chip 120a. The second annular retaining wall 140 a is disposed inside the first annular retaining wall 130 a, is also located in the peripheral area 114 of the carrier 110 , and surrounds the LED chips 120 . In particular, in this embodiment, the second annular retaining wall 140a is disposed between the LED chip 120a and the first annular retaining wall 130a, and the height H2 of the second annular retaining wall 140a is lower than that of the first annular retaining wall 130a. Height H1. In addition, the material of the first annular retaining wall 130a and the material of the second annular retaining wall 140a are, for example, silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal, wherein the material of the first annular retaining wall 130a can be the same as The materials of the second annular retaining wall 140a are the same or different, which is not limited here. Furthermore, both the first annular retaining wall 130 a and the second annular retaining wall 140 a in this embodiment have the property of not absorbing light and having a reflective function. Here, the first annular retaining wall 130a and the second annular retaining wall 140a are both a continuous annular retaining wall.
萤光胶体150配置于承载器110上且至少覆盖发光二极管芯片120a与第二环形挡墙140a。特别是,本实施例的萤光胶体150包括至少一种萤光粉152及至少一种胶体154,也就是说,本实施例的萤光胶体150是由至少一种萤光粉152与至少一种胶体154混合而成,其中萤光粉152分布于发光二极管芯片120a的表面上。此处,萤光粉152例如是黄色萤光粉、红色萤光粉、绿色萤光粉或以上萤光粉任意组合,但并不以此为限。此外,萤光胶体150中亦可添加光扩散剂(未绘示)来调整发光二极管封装结构100a所发出的光的颜色或均匀度等光学效果。The fluorescent glue 150 is disposed on the carrier 110 and covers at least the LED chip 120a and the second annular retaining wall 140a. In particular, the fluorescent colloid 150 of this embodiment includes at least one phosphor 152 and at least one colloid 154, that is, the fluorescent colloid 150 of this embodiment is composed of at least one phosphor 152 and at least one The colloid 154 is mixed, and the phosphor powder 152 is distributed on the surface of the LED chip 120a. Here, the fluorescent powder 152 is, for example, yellow fluorescent powder, red fluorescent powder, green fluorescent powder or any combination of the above fluorescent powders, but not limited thereto. In addition, a light diffusing agent (not shown) may also be added to the fluorescent gel 150 to adjust optical effects such as color or uniformity of the light emitted by the LED packaging structure 100a.
更具体来说,在本实施例中,如图1A所示,第二环形挡墙140a与第一环形挡墙130a之间具有一间距D,且在承载器110上定义出一凹槽U。本实施例中,萤光胶体150填充于凹槽U,且萤光粉152分布于凹槽U的底面及第二环形挡墙140a的顶表面。More specifically, in this embodiment, as shown in FIG. 1A , there is a distance D between the second annular retaining wall 140 a and the first annular retaining wall 130 a, and a groove U is defined on the carrier 110 . In this embodiment, the fluorescent colloid 150 is filled in the groove U, and the phosphor powder 152 is distributed on the bottom surface of the groove U and the top surface of the second annular retaining wall 140a.
由于本实施例的发光二极管封装结构100a具有第一环形挡墙130a与第二环形挡墙140a的设计,且萤光胶体150的萤光粉152分布于发光二极管芯片120a的表面上,又部分萤光粉152分布于凹槽U的底面及第二环形挡墙140a的顶表面。因此,发光二极管芯片120a的周围(即承载器110的周边区114)不会聚集过多的萤光粉152,即可减少承载器110的周边区114内的闲置空间,以使较多的萤光粉152分布于发光二极管芯片120a的表面上。故,当具有指向性的发光二极管芯片120a所发出的色光(例如是蓝光或紫外光)照射至分布于其上的萤光粉152,以激发萤光粉152发出色光(例如是黄光或红光),并与发光二极管芯片120a所发出的色光(例如是蓝光或紫外光)相混合时,可有效避免周边区114堆叠较多的萤光粉152受到发光二极管芯片120a激发而产生黄晕现象。Since the light emitting diode packaging structure 100a of this embodiment has the design of the first annular retaining wall 130a and the second annular retaining wall 140a, and the phosphor powder 152 of the fluorescent colloid 150 is distributed on the surface of the light emitting diode chip 120a, part of the phosphor The light powder 152 is distributed on the bottom surface of the groove U and the top surface of the second annular retaining wall 140a. Therefore, the surrounding area of the light emitting diode chip 120a (that is, the peripheral area 114 of the carrier 110) will not accumulate too much phosphor 152, and the idle space in the peripheral area 114 of the carrier 110 can be reduced, so that more phosphors can be used. The light powder 152 is distributed on the surface of the LED chip 120a. Therefore, when the colored light (such as blue light or ultraviolet light) emitted by the directional light-emitting diode chip 120a irradiates the phosphor powder 152 distributed thereon, the fluorescent powder 152 is excited to emit colored light (such as yellow light or red light). When mixed with the colored light (such as blue light or ultraviolet light) emitted by the LED chip 120a, it can effectively prevent the phosphor powder 152 stacked more in the peripheral area 114 from being excited by the LED chip 120a to produce a yellow halo phenomenon. .
再者,由于第一环形挡墙130a与第二环形挡墙140a皆具有不吸光且具有反射功能的特性,因此当发光二极管芯片120a所发出的色光(例如是蓝光)照射至分布于凹槽U内的萤光粉152时,第一环形挡墙130a与第二环形挡墙140a可使色光产生反射及散射现象,进而使反射色光及散射色光照射至承载区112内,可有效提高发光二极管封装结构100a的出光亮度。简言之,本实施例的发光二极管封装结构100a可呈现较佳的光学表现。Moreover, since both the first annular retaining wall 130a and the second annular retaining wall 140a have the characteristics of not absorbing light and having a reflective function, when the colored light (for example, blue light) emitted by the LED chip 120a is irradiated onto the groove U When the fluorescent powder 152 is inside, the first annular retaining wall 130a and the second annular retaining wall 140a can cause the colored light to reflect and scatter, and then make the reflected colored light and scattered colored light irradiate into the carrying area 112, which can effectively improve the LED package. The light output brightness of the structure 100a. In short, the light emitting diode packaging structure 100a of this embodiment can exhibit better optical performance.
值得一提的是,本实施例并不限定发光二极管芯片120a与承载器110的连接形态,虽然此处所提及的发光二极管芯片120a具体化为透过倒装焊的方式与承载器110电性连接。但是,于其他实施例中,请参考图1C,发光二极管封装结构100b的发光二极管芯片120b亦可透过多条导线125以打线接合的方式与承载器110电性连接,此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。再者,虽然于本实施例中承载器110、第一环形挡墙130a及第二环形挡墙140a为各自独立的元件,但于其他未绘示的实施例中,承载器110与第一环形挡墙130a亦可为一体成型的结构,其中承载器110的材质与第一环形挡墙130a的材质例如皆采用金属;或者是,承载器110与第二环形挡墙140a为一体成型的结构,其中承载器110的材质以及第二环形挡墙140a的材质例如皆采用金属。It is worth mentioning that this embodiment does not limit the connection form of the light-emitting diode chip 120a and the carrier 110, although the light-emitting diode chip 120a mentioned here is embodied to be electrically connected to the carrier 110 through flip-chip bonding. sexual connection. However, in other embodiments, please refer to FIG. 1C , the light emitting diode chip 120b of the light emitting diode package structure 100b can also be electrically connected to the carrier 110 by wire bonding through a plurality of wires 125, which still belongs to the present invention. The technical solutions that can be adopted do not depart from the scope of protection intended by the present invention. Furthermore, although the carrier 110, the first annular retaining wall 130a and the second annular retaining wall 140a are independent components in this embodiment, in other unillustrated embodiments, the carrier 110 and the first annular retaining wall The retaining wall 130a can also be an integrally formed structure, wherein the material of the carrier 110 and the first annular retaining wall 130a are all made of metal, for example; or, the carrier 110 and the second annular retaining wall 140a are integrally formed. The material of the carrier 110 and the material of the second annular retaining wall 140a are, for example, metal.
虽然本实施例的第二环形挡墙140a的形态与第一环形挡墙130a的形态相同,皆为一连续的环形挡墙。但,于其他实施例中,请参考图1D,发光二极管封装结构100c的第二环形挡墙140b亦可为一不连续的环形挡墙,而第一环形挡墙130a在相同概念下,亦可为一不连续的环形挡墙(未绘示),此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。此外,于其他未绘示的实施例中,本领域的技术人员当可参照上述实施例的说明,依据实际需求,而选用上述元件、元件的材质、元件的型态及其配置方式,以达到所需的技术效果。Although the shape of the second annular retaining wall 140a in this embodiment is the same as that of the first annular retaining wall 130a, they are both a continuous annular retaining wall. However, in other embodiments, please refer to FIG. 1D, the second annular retaining wall 140b of the LED package structure 100c can also be a discontinuous annular retaining wall, and the first annular retaining wall 130a can also be It is a discontinuous annular retaining wall (not shown), which still belongs to the applicable technical solution of the present invention and does not depart from the intended protection scope of the present invention. In addition, in other unillustrated embodiments, those skilled in the art can refer to the description of the above-mentioned embodiments, and select the above-mentioned components, materials of the components, types and configurations of the components according to actual needs, so as to achieve desired technical effect.
图2A为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。图2B为图2A的发光二极管封装结构的俯视示意图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。FIG. 2A is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention. FIG. 2B is a schematic top view of the LED package structure in FIG. 2A . The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated.
请同时参考图2A与图2B,图2A与图2B的发光二极管封装结构100d与图1A及图1B的发光二极管封装结构100a相似,其不同之处在于:图2A与图2B的发光二极管封装结构100d包括多个发光二极管芯片120a,其中这些发光二极管芯片120a是透过倒装焊技术与承载器110电性连接。此处的发光二极管封装结构100d例如是一芯片-电路板接合(chip onboard,COB)型态的发光二极管封装结构。此外,萤光胶体150的萤光粉152是分布于这些发光二极管芯片120a的表面上、这些发光二极管芯片120a之间的间隙内。当然,如图2A所示,萤光胶体150亦可填充于于承载器110上所定义的凹槽U,且萤光粉152分布于凹槽U内及第二环形挡墙140a的顶表面。Please refer to FIG. 2A and FIG. 2B at the same time. The LED packaging structure 100d in FIG. 2A and FIG. 2B is similar to the LED packaging structure 100a in FIG. 1A and FIG. 100d includes a plurality of LED chips 120a, wherein the LED chips 120a are electrically connected to the carrier 110 through flip-chip bonding technology. The LED package structure 100d here is, for example, a chip-on-board (COB) type LED package structure. In addition, the phosphor powder 152 of the fluorescent colloid 150 is distributed on the surfaces of the LED chips 120a and in the gaps between the LED chips 120a. Certainly, as shown in FIG. 2A , the fluorescent gel 150 can also be filled in the groove U defined on the carrier 110 , and the phosphor powder 152 is distributed in the groove U and the top surface of the second annular retaining wall 140 a.
由于本实施例的发光二极管芯片120a是采用倒装焊技术与承载器110电性连接,可节省多个发光二极管芯片120a间预留的打线区域,因此在单位面积下可于承载器110上配置较多的发光二极管芯片120a,即可配置较多的芯片数量,可有效提高发光二极管封装结构100d的出光亮度。再者,由于本实施例的发光二极管封装结构100a具有第一环形挡墙130a与第二环形挡墙140a的设计,且萤光胶体150的萤光粉152是分布于所述发光二极管芯片120a的表面上与各芯片120a之间的间隙内,以及第二环形挡墙140a的顶表面与第一环形挡墙130a与第二环形挡墙140a之间的间隙内。因此,所述发光二极管芯片120a的周围(即承载器110的周边区114)不会聚集过多的萤光粉152,不但可减少承载器110的周边区114内的闲置空间,更由于第一环形挡墙130a与第二环形挡墙140a皆具有不吸光且具有反射功能的特性,故第二环形挡墙140a的顶表面及第一环形挡墙130a与第二环形挡墙140a之间的间隙内所聚集的萤光粉152不易受到发光二极管芯片120a的激发,可有效避免周边区114产生黄晕现象。Since the light-emitting diode chip 120a of this embodiment is electrically connected to the carrier 110 by flip-chip bonding technology, the reserved wiring area between multiple light-emitting diode chips 120a can be saved, so it can be placed on the carrier 110 per unit area. More light-emitting diode chips 120a are configured, so that a larger number of chips can be configured, which can effectively improve the light output brightness of the light-emitting diode package structure 100d. Furthermore, since the LED packaging structure 100a of this embodiment has the design of the first annular retaining wall 130a and the second annular retaining wall 140a, and the fluorescent powder 152 of the fluorescent colloid 150 is distributed on the LED chip 120a In the gap between the surface and each chip 120a, and in the gap between the top surface of the second annular barrier 140a and the first annular barrier 130a and the second annular barrier 140a. Therefore, the surrounding area of the LED chip 120a (that is, the peripheral area 114 of the carrier 110) will not accumulate too much phosphor 152, which not only reduces the idle space in the peripheral area 114 of the carrier 110, but also due to the first Both the annular retaining wall 130a and the second annular retaining wall 140a have the characteristics of not absorbing light and having a reflective function, so the top surface of the second annular retaining wall 140a and the gap between the first annular retaining wall 130a and the second annular retaining wall 140a The fluorescent powder 152 accumulated in the interior is less likely to be excited by the LED chip 120a, which can effectively avoid the yellow halo phenomenon in the peripheral area 114.
此外,由于第一环形挡墙130a与第二环形挡墙140a皆具有不吸光且具有反射功能的特性,因此反射及散射所述发光二极管芯片120a所产生的色光至承载区112内,可有效提高发光二极管封装结构100d的出光亮度。简言之,本实施例的发光二极管封装结构100d可呈现较佳的光学表现。In addition, because both the first annular retaining wall 130a and the second annular retaining wall 140a have the characteristics of not absorbing light and having a reflective function, so reflecting and scattering the colored light generated by the LED chip 120a into the carrying area 112 can effectively improve The light output brightness of the LED packaging structure 100d. In short, the LED packaging structure 100d of this embodiment can exhibit better optical performance.
值得一提的是,本实施例并不限定所述发光二极管芯片120a与承载器110的连接形态,虽然此处所提及的所述发光二极管芯片120a具体化为透过倒装焊的方式与承载器110电性连接。但,于其他实施例中,请参考图2C,发光二极管封装结构100e的所述发光二极管芯片120b亦可透过多条导线125以打线接合的方式与承载器110电性连接,此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。It is worth mentioning that this embodiment does not limit the connection form of the light emitting diode chip 120a and the carrier 110, although the light emitting diode chip 120a mentioned here is embodied in the way of flip chip bonding and The carrier 110 is electrically connected. However, in other embodiments, please refer to FIG. 2C , the light emitting diode chip 120b of the light emitting diode package structure 100e can also be electrically connected to the carrier 110 by wire bonding through a plurality of wires 125, which still belongs to The technical solutions that can be adopted in the present invention do not depart from the scope of protection intended by the present invention.
此外,虽然于本实施例中承载器110、第一环形挡墙130a及第二环形挡墙140a为各自独立的元件,但于其他未绘示的实施例中,承载器110与第一环形挡墙130a亦可为一体成型的结构,其中承载器110的材质与第一环形挡墙130a的材质例如皆采用金属;或者是,承载器110及第二环形挡墙140a亦可为一体成型的结构,其中承载器110的材质以及第二环形挡墙140a的材质例如皆采用金属。In addition, although the carrier 110, the first annular retaining wall 130a and the second annular retaining wall 140a are independent components in this embodiment, in other unillustrated embodiments, the carrier 110 and the first annular retaining wall The wall 130a can also be an integral structure, wherein the material of the carrier 110 and the first annular retaining wall 130a are all made of metal, for example; or, the carrier 110 and the second annular retaining wall 140a can also be an integral structure , wherein the material of the carrier 110 and the material of the second annular retaining wall 140a are, for example, metal.
虽然本实施例的图2B所示的第二环形挡墙140a的形态与第一环形挡墙130a的形态相同,即皆为一连续的环形挡墙。但,于其他未绘示的实施例中,第二环形挡墙亦可为一不连续的环形挡墙(请参考如图1D所示),而第一环形挡墙130a在相同概念下,亦可为一不连续的环形挡墙(未绘示),此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。Although the shape of the second annular retaining wall 140a shown in FIG. 2B of this embodiment is the same as that of the first annular retaining wall 130a, that is, both are a continuous annular retaining wall. However, in other unillustrated embodiments, the second annular retaining wall can also be a discontinuous annular retaining wall (please refer to FIG. 1D ), and the first annular retaining wall 130a can also be It may be a discontinuous annular retaining wall (not shown), which still belongs to the applicable technical solution of the present invention, and does not depart from the intended protection scope of the present invention.
以上仅介绍本发明的发光二极管封装结构100a、100b、100c、100d、100e的结构,并未介绍本发明的发光二极管封装结构100a、100b、100c、100d、100e的制作方法。对此,以下将以一实施例来详细说明发光二极管封装结构100a、100b、100c、100d、100e的结构的制作方法。The above only introduces the structures of the LED packaging structures 100a, 100b, 100c, 100d, and 100e of the present invention, but does not introduce the manufacturing methods of the LED packaging structures 100a, 100b, 100c, 100d, and 100e of the present invention. In this regard, an embodiment will be used to describe the fabrication method of the structures of the LED packaging structures 100 a , 100 b , 100 c , 100 d , and 100 e in detail.
图3为本发明的一实施例的一种发光二极管封装结构的制作方法的流程示意图。请参考图3,并同时配合参考图1A至1D及图2A至2C的图式。FIG. 3 is a schematic flowchart of a manufacturing method of a light emitting diode packaging structure according to an embodiment of the present invention. Please refer to FIG. 3 , and refer to the diagrams of FIGS. 1A to 1D and FIGS. 2A to 2C at the same time.
依照本实施例的发光二极管封装结构的制作方法,首先,步骤S10,提供一承载器110,其中承载器110具有一承载区112以及一围绕承载区112的周边区114。此处,承载器110的材质例如是陶瓷、高分子聚合物、硅、碳化硅、绝缘材料或金属,其中当承载器110的材质为金属时,承载器110可为一铜基板或一金属核心印刷电路板(Metal Core PrintedCircuit Board,MCPCB),但并不以此为限。According to the manufacturing method of the light emitting diode package structure of this embodiment, firstly, step S10 , providing a carrier 110 , wherein the carrier 110 has a carrying area 112 and a peripheral area 114 surrounding the carrying area 112 . Here, the material of the carrier 110 is, for example, ceramics, high molecular polymer, silicon, silicon carbide, insulating material or metal, wherein when the material of the carrier 110 is metal, the carrier 110 can be a copper substrate or a metal core Printed circuit board (Metal Core Printed Circuit Board, MCPCB), but not limited thereto.
接着,步骤S11,配置至少一个发光二极管芯片120a(或120b)于承载器110的承载区112内,且发光二极管芯片120a(或120b)电性连接至承载器110。此处,发光二极管芯片120a(或120b)是透过倒装焊(或打线接合)技术与承载器110电性连接。Next, step S11 , disposing at least one LED chip 120 a (or 120 b ) in the carrying area 112 of the carrier 110 , and the LED chip 120 a (or 120 b ) is electrically connected to the carrier 110 . Here, the LED chip 120a (or 120b ) is electrically connected to the carrier 110 through flip-chip (or wire bonding) technology.
接着,步骤S12,形成一第一环形挡墙130a于承载器110的周边区114内。Next, step S12 , forming a first annular retaining wall 130 a in the peripheral area 114 of the carrier 110 .
接着,步骤S13,形成一第二环形挡墙140a(或140b)于承载器110的周边区114内。特别是,第二环形挡墙140a(或140b)围绕发光二极管芯片120a(或120b)并设置于第一环形挡墙130a的内侧,亦于发光二极管芯片120a(或120b)与第一环形挡墙130a之间。第二环形挡墙140a(或140b)的高度H2低于第一环形挡墙130a的高度H1。此处,更具体来说,第二环挡墙140a(或140b)与第一环形挡墙130a之间具有一间距D,且在承载器110上定义出凹槽U。第一环形挡墙130a的材质与第二环形挡墙140a(或140b)的材质具有不吸光且具有反射功能的特性,例如是硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属,其中第一环形挡墙130a的材质可与第二环形挡墙140a(或140b)的材质相同或不同,于此并不加以限制。本实施例中,第一环形挡墙130a与第二环形挡墙140a(或140b)可为一连续的环形挡墙,亦可以非连续的环形挡墙作改变。Next, step S13 , forming a second annular retaining wall 140 a (or 140 b ) in the peripheral area 114 of the carrier 110 . In particular, the second annular retaining wall 140a (or 140b) surrounds the LED chip 120a (or 120b) and is disposed inside the first annular retaining wall 130a. Between 130a. The height H2 of the second annular retaining wall 140a (or 140b ) is lower than the height H1 of the first annular retaining wall 130a. Here, more specifically, there is a distance D between the second annular retaining wall 140 a (or 140 b ) and the first annular retaining wall 130 a, and a groove U is defined on the carrier 110 . The material of the first annular retaining wall 130a and the material of the second annular retaining wall 140a (or 140b) have the characteristics of not absorbing light and having a reflective function, such as silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal , wherein the material of the first annular retaining wall 130a may be the same as or different from that of the second annular retaining wall 140a (or 140b ), which is not limited here. In this embodiment, the first annular retaining wall 130a and the second annular retaining wall 140a (or 140b ) can be a continuous annular retaining wall, or can be changed into discontinuous annular retaining walls.
需说明的是,在本实施例中并不限定第一环形挡墙130a与第二环形挡墙140a(或140b)的形成顺序。也就是说,可先形成第一环形挡墙130a后,再形成第二环形挡墙140a(或140b);或者是,第一环形挡墙130a与承载器110一体成型后,再形成第二环形挡墙140a(或140b)于承载器110上;或者是,先形成第二环形挡墙140a(或140b)后,再形成第一环形挡墙130a,于此并不加以限制。此外,形成第一环形挡墙130a与第二环形挡墙140a(或140b)的方法可包括透过点胶机(未绘示)来进行点胶程序(此时,第一环形挡墙130a与第二环形挡墙140a(或140b)的材质例如是橡胶)或是透过光刻、蚀刻及电镀程序来形成(此时,第一环形挡墙130a与第二环形挡墙140a(或140b)的材质例如是金属)。It should be noted that, in this embodiment, the formation order of the first annular retaining wall 130 a and the second annular retaining wall 140 a (or 140 b ) is not limited. That is to say, the first annular retaining wall 130a can be formed first, and then the second annular retaining wall 140a (or 140b); The retaining wall 140a (or 140b ) is on the carrier 110 ; or, the first annular retaining wall 130a is formed after the second annular retaining wall 140a (or 140b ) is formed first, which is not limited here. In addition, the method of forming the first annular retaining wall 130a and the second annular retaining wall 140a (or 140b) may include performing a dispensing process through a glue dispenser (not shown) (at this time, the first annular retaining wall 130a and The material of the second annular retaining wall 140a (or 140b) is, for example, rubber) or formed through photolithography, etching and electroplating procedures (at this time, the first annular retaining wall 130a and the second annular retaining wall 140a (or 140b) material such as metal).
之后,步骤S14,填充一萤光胶体150于承载器110上以至少覆盖发光二极管芯片120a(或120b)与第二环形挡墙140b,其中萤光胶体150包括至少一种萤光粉152及至少一种胶体154混合而成,且萤光粉152散布于胶体154内。需说明的是,填充萤光胶体150的方法例如是透过点胶机(未绘示)来进行点胶程序。为了避免点胶的过程中,萤光胶体150中的萤光粉152沉淀速度不一致,因此通常会于萤光胶体150中掺杂有抗沉淀剂,例如二氧化硅(SiO2)(未绘示)。再者,萤光胶体150中亦可添加有一光扩散剂(未绘示)来调整发光二极管封装结构100a所发出的光的颜色或均匀度等光学效果。Afterwards, step S14, filling a fluorescent colloid 150 on the carrier 110 to at least cover the LED chip 120a (or 120b) and the second annular retaining wall 140b, wherein the fluorescent colloid 150 includes at least one phosphor 152 and at least one A colloid 154 is mixed, and the fluorescent powder 152 is dispersed in the colloid 154 . It should be noted that, the method of filling the fluorescent gel 150 is, for example, a dispensing process through a dispensing machine (not shown). In order to avoid the inconsistency of the sedimentation speed of the fluorescent powder 152 in the fluorescent colloid 150 during the dispensing process, the fluorescent colloid 150 is usually doped with an anti-precipitation agent, such as silicon dioxide (SiO 2 ) (not shown). ). Furthermore, a light diffusing agent (not shown) may also be added to the fluorescent colloid 150 to adjust optical effects such as the color or uniformity of the light emitted by the LED packaging structure 100a.
接着,步骤S15,进行一离心程序以使萤光胶体150中的萤光粉152沉降至发光二极管芯片120(或120b)的表面上。此处,进行离心程序是采用离心机(未绘示)来实现,透过离心机的离心力将分散于胶体154内的萤光粉152分布于发光二极管芯片120(或120b)的表面上,可使萤光粉152平均分布于发光二极管芯片120(或120b)的表面,而避免萤光粉152囤积的厚度不均一,而影响光学效果,或因过多的萤光粉152囤积至承载器110的周边区114而产生边壁黄晕现象。当然,于离心程序的过程中,萤光粉152亦可能因为离心力的关系而填充于凹槽U内。Next, in step S15 , a centrifugation process is performed so that the fluorescent powder 152 in the fluorescent colloid 150 settles on the surface of the LED chip 120 (or 120 b ). Here, the centrifugation process is implemented by using a centrifuge (not shown), and the fluorescent powder 152 dispersed in the colloid 154 is distributed on the surface of the LED chip 120 (or 120b) through the centrifugal force of the centrifuge. The phosphor powder 152 is evenly distributed on the surface of the light-emitting diode chip 120 (or 120b), so as to avoid the uneven thickness of the phosphor powder 152 accumulation, which will affect the optical effect, or cause excessive phosphor powder 152 accumulation to the carrier 110 The peripheral area 114 of the wall produces a yellow halo phenomenon on the side wall. Of course, during the centrifugal process, the phosphor powder 152 may also be filled in the groove U due to the centrifugal force.
最后,步骤S16,放置一烤箱进行一烘烤程序以固化萤光胶体150,而完成发光二极管封装结构100a、100b、100c、100d、100e的制作。Finally, in step S16 , place an oven to perform a baking process to cure the fluorescent glue 150 , and complete the fabrication of the LED packaging structures 100 a , 100 b , 100 c , 100 d , 100 e.
由于本实施例是先进行完离心程序后,即已使萤光胶体150中的萤光粉152分布于发光二极管芯片120(或120b)的表面上,才进行烘烤程序。相较于已知填充完萤光胶体后即进行烘烤程序而言,本实施例的发光二极管封装结构100a、100b、100c、100d、100e的色度座标不易偏移或增大(拉长),即可较为集中,可具有较佳的色度表现。此外,透过离心程序亦可将萤光胶体150中的气泡脱离,而使所形成的发光二极管封装结构100a、100b、100c、100d、100e具有较佳的光学表现。In this embodiment, after the centrifugation process is performed first, that is, the phosphor powder 152 in the fluorescent colloid 150 is distributed on the surface of the LED chip 120 (or 120 b ), the baking process is performed. Compared with the known baking process after the fluorescent colloid is filled, the chromaticity coordinates of the LED packaging structures 100a, 100b, 100c, 100d, and 100e in this embodiment are not easy to shift or increase (elongated). ), which can be more concentrated and have better chroma performance. In addition, air bubbles in the fluorescent colloid 150 can also be detached through the centrifugation process, so that the formed LED packaging structures 100a, 100b, 100c, 100d, 100e have better optical performance.
图4A为本发明的另一实施例的一种发光二极管封装结构的剖面示意图。图4B为图4A的发光二极管封装结构的俯视示意图。本实施例沿用前述实施例的元件标号与部分内容,其中采用相同的标号来表示相同或近似的元件,并且省略了相同技术内容的说明。关于省略部分的说明可参照前述实施例,本实施例不再重复赘述。FIG. 4A is a schematic cross-sectional view of a light emitting diode packaging structure according to another embodiment of the present invention. FIG. 4B is a schematic top view of the LED package structure in FIG. 4A . The present embodiment follows the reference numerals and partial contents of the previous embodiments, wherein the same reference numerals are used to denote the same or similar components, and descriptions of the same technical contents are omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, and this embodiment will not be repeated.
请同时参考图4A与图4B,本实施例的发光二极管封装结构100f包括一承载器110a、多个发光二极管芯片120a、一环形挡墙130c、多个条形挡墙140c以及一萤光胶体150。承载器110a的材质例如是陶瓷、高分子聚合物或金属,其中当承载器110a的材质为金属时,承载器110a可为一铜基板或一金属核心印刷电路板(Metal Core Printed CircuitBoard,MCPCB),但并不以此为限。本实施例中,发光二极管芯片120a配置于承载器110a上且电性连接至承载器110a,其中发光二极管芯片120a是透过倒装焊技术与承载器110a电性连接。环形挡墙130c配置于承载器110a上且围绕发光二极管芯片120a。Please refer to FIG. 4A and FIG. 4B at the same time. The light emitting diode packaging structure 100f of this embodiment includes a carrier 110a, a plurality of light emitting diode chips 120a, an annular retaining wall 130c, a plurality of strip retaining walls 140c and a fluorescent colloid 150 . The material of the carrier 110a is, for example, ceramics, polymer or metal. When the material of the carrier 110a is metal, the carrier 110a can be a copper substrate or a metal core printed circuit board (Metal Core Printed CircuitBoard, MCPCB). , but not limited to this. In this embodiment, the LED chip 120a is disposed on the carrier 110a and electrically connected to the carrier 110a, wherein the LED chip 120a is electrically connected to the carrier 110a through flip-chip bonding technology. The annular retaining wall 130c is disposed on the carrier 110a and surrounds the LED chips 120a.
条形挡墙140c配置于承载器110a上且连接环形挡墙130c,其中条形挡墙140c与环形挡墙130c在承载器110a上定义出多个格子状凹槽C,而发光二极管芯片120a分别设置于格子状凹槽C内。于另一实施例中,请参考图4D,发光二极管封装结构100h的条形挡墙140e亦可为彼此相连而定义出多个次环形挡墙130b,次环形挡墙130b配置于承载器110a上且其分别围绕各个发光二极管芯片120a,而定义出多个格子状凹槽C’。请再参考图4A与图4B,萤光胶体150配置于承载器110a上,且填充于格子状凹槽C中并至少覆盖发光二极管芯片120a,其中萤光胶体150包括至少一种萤光粉152及至少一种胶体154,且萤光粉152分布于发光二极管芯片120a的表面上。更具体来说,在本实施例中,环状挡墙130c的高度H3与每一条形挡墙140c的高度H4实质上相同,其中所述条形挡墙140c是由连续的条形挡墙(即图4B中纵轴方向的挡墙)与不连续的条形挡墙(即图4B中横轴方向的挡墙)所组成,但并不以此为限。环形挡墙130c的材质与每一条形挡墙140c的材质例如是硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属。The strip-shaped retaining wall 140c is disposed on the carrier 110a and connected to the annular retaining wall 130c, wherein the strip-shaped retaining wall 140c and the annular retaining wall 130c define a plurality of grid-shaped grooves C on the carrier 110a, and the LED chips 120a are respectively Set in the lattice groove C. In another embodiment, please refer to FIG. 4D , the strip-shaped retaining walls 140e of the LED packaging structure 100h can also be connected to each other to define a plurality of sub-annular retaining walls 130b, and the sub-annular retaining walls 130b are disposed on the carrier 110a And they respectively surround each light emitting diode chip 120a, and define a plurality of grid-like grooves C'. Please refer to FIG. 4A and FIG. 4B again, the fluorescent colloid 150 is disposed on the carrier 110a, and is filled in the grid-shaped groove C and covers at least the LED chip 120a, wherein the fluorescent colloid 150 includes at least one phosphor 152 and at least one colloid 154, and the phosphor powder 152 is distributed on the surface of the LED chip 120a. More specifically, in this embodiment, the height H3 of the ring-shaped retaining wall 130c is substantially the same as the height H4 of each strip-shaped retaining wall 140c, wherein the strip-shaped retaining wall 140c is composed of continuous strip-shaped retaining walls ( That is, the retaining wall in the vertical axis direction in FIG. 4B) and discontinuous bar-shaped retaining walls (ie, the retaining wall in the horizontal axis direction in FIG. 4B), but it is not limited thereto. The material of the annular retaining wall 130c and the material of each strip retaining wall 140c is, for example, silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal.
由于本实施例的发光二极管芯片120a是采用倒装焊技术与承载器110a电性连接,可节省多个发光二极管芯片120a间预留的打线区域,因此在单位面积下可于承载器110a上配置较多的发光二极管芯片120a,即可配置较多的芯片数量,可有效提高发光二极管封装结构100h的出光亮度。再者,由于本实施例的发光二极管封装结构100f具有环形挡墙130c及所述条形挡墙140c的搭配设计,因此可减少承载器110a上的闲置空间,而减少过多萤光粉152堆积于环形挡墙130c及条形挡墙140c之间的间隙,使其不易受到发光二极管芯片120a的激发,故可有效避免边壁产生黄晕现象。此外,由于本实施例的环形挡墙130c及所述条形挡墙140c具有不吸光且具有反射功能的特性,因此可反射及散射所述发光二极管芯片120a所产生的色光,可有效提高发光二极管封装结构100h的出光亮度。简言之,本实施例的发光二极管封装结构100h可呈现较佳的光学表现。Since the light-emitting diode chip 120a of this embodiment is electrically connected to the carrier 110a by flip-chip bonding technology, the reserved wiring area between multiple light-emitting diode chips 120a can be saved, so it can be placed on the carrier 110a in a unit area. More light-emitting diode chips 120a are configured, so that a larger number of chips can be configured, which can effectively improve the light output brightness of the light-emitting diode package structure 100h. Furthermore, since the light emitting diode packaging structure 100f of this embodiment has a collocation design of the ring-shaped retaining wall 130c and the strip-shaped retaining wall 140c, the idle space on the carrier 110a can be reduced, thereby reducing the accumulation of excess phosphor 152 The gap between the ring-shaped retaining wall 130c and the strip-shaped retaining wall 140c makes it less likely to be excited by the light-emitting diode chip 120a, so that the yellow halo phenomenon on the side wall can be effectively avoided. In addition, since the ring-shaped retaining wall 130c and the strip-shaped retaining wall 140c in this embodiment have the characteristics of not absorbing light and having a reflective function, they can reflect and scatter the colored light generated by the LED chip 120a, which can effectively improve the performance of the LED. The light output brightness of the package structure 100h. In short, the LED packaging structure 100h of this embodiment can exhibit better optical performance.
值得一提的是,本实施例并不限定所述发光二极管芯片120a与承载器110a的连接形态,虽然此处所提及的所述发光二极管芯片120a具体化为透过倒装焊的方式与承载器110a电性连接。但,于其他未绘示的实施例中,发光二极管封装结构的所述发光二极管芯片亦可透过打线接合的方式与承载器电性连接,此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。再者,虽然于本实施例中承载器110a、环形挡墙130c及条形挡墙140c为各自独立的元件,但于其他未绘示的实施例中,承载器110a与环形挡墙130c亦可为一体成型的结构,其中承载器110a的材质与第一环形挡墙130c的材质例如皆采用金属;或者是,承载器110a及所述条形挡墙140c亦可为一体成型的结构,其中承载器110a的材质以及所述条形挡墙140c的材质例如皆采用金属。此外,虽然本实施例的所述条形挡墙140c的高度H4实质上与环形挡墙130c的高度H3相同,但于其他实施例中,请参考图4C,发光二极管封装结构100g的每一条形挡墙140d的高度H5亦可低于环状挡墙130a的高度H3,此仍属于本发明可采用的技术方案,不脱离本发明所欲保护的范围。另外,于其他未绘示的实施例中,本领域的技术人员当可参照上述实施例的说明,依据实际需求,而选用上述元件、元件的材质、元件的型态及其配置方式,以达到所需的技术效果。It is worth mentioning that this embodiment does not limit the connection form of the light emitting diode chip 120a and the carrier 110a, although the light emitting diode chip 120a mentioned here is embodied in the way of flip chip bonding and The carrier 110a is electrically connected. However, in other unillustrated embodiments, the light emitting diode chip of the light emitting diode packaging structure can also be electrically connected to the carrier by wire bonding, which still belongs to the technical solution that can be adopted in the present invention, and does not Deviating from the intended protection scope of the present invention. Furthermore, although the carrier 110a, the annular retaining wall 130c and the bar-shaped retaining wall 140c are independent components in this embodiment, in other unillustrated embodiments, the carrier 110a and the annular retaining wall 130c can also be An integrally formed structure, wherein the material of the carrier 110a and the material of the first annular retaining wall 130c are all made of metal; or, the carrier 110a and the strip-shaped retaining wall 140c can also be an integrally formed structure, wherein The material of the device 110a and the strip-shaped retaining wall 140c are all made of metal, for example. In addition, although the height H4 of the bar-shaped retaining wall 140c in this embodiment is substantially the same as the height H3 of the annular retaining wall 130c, in other embodiments, please refer to FIG. The height H5 of the retaining wall 140d may also be lower than the height H3 of the annular retaining wall 130a, which still belongs to the applicable technical solution of the present invention and does not depart from the intended protection scope of the present invention. In addition, in other unillustrated embodiments, those skilled in the art may refer to the description of the above-mentioned embodiments, and select the above-mentioned elements, materials of the elements, types of elements and their configurations according to actual needs, so as to achieve desired technical effect.
以上仅介绍本发明的发光二极管封装结构100h、100i的结构,并未介绍本发明的发光二极管封装结构100h、100i的制作方法。对此,以下将以一实施例来详细说明发光二极管封装结构100h、100i的结构的制作方法。The above only introduces the structures of the LED packaging structures 100h and 100i of the present invention, but does not introduce the manufacturing method of the LED packaging structures 100h and 100i of the present invention. In this regard, an embodiment will be used to describe the fabrication method of the structures of the LED packaging structures 100h and 100i in detail below.
图5为本发明的另一实施例的一种发光二极管封装结构的制作方法的流程示意图。请参考图5,并同时配合参考图4A至4C的图式。依照本实施例的发光二极管封装结构的制作方法,首先,步骤S20,提供一承载器110a。此处,承载器110a的材质例如是陶瓷、高分子聚合物或金属,其中当承载器110a的材质为金属时,承载器110a可为一铜基板或一金属核心印刷电路板(Metal Core Printed Circuit Board,MCPCB),但并不以此为限。FIG. 5 is a schematic flowchart of a method for manufacturing a light emitting diode packaging structure according to another embodiment of the present invention. Please refer to FIG. 5 and refer to the diagrams of FIGS. 4A to 4C at the same time. According to the manufacturing method of the light emitting diode packaging structure of this embodiment, firstly, in step S20, a carrier 110a is provided. Here, the material of the carrier 110a is, for example, ceramics, polymer or metal. When the material of the carrier 110a is metal, the carrier 110a can be a copper substrate or a metal core printed circuit board (Metal Core Printed Circuit Board). Board, MCPCB), but not limited to this.
接着,步骤S21,配置多个发光二极管芯片120a于承载器110上,且所述发光二极管芯片120a电性连接至承载器110a。此处,这些发光二极管芯片120a是透过倒装焊技术与承载器110a电性连接。当然,于其他未绘示的实施例中,这些发光二极管芯片是透过打线接合技术与承载器电性连接。Next, step S21 , disposing a plurality of LED chips 120 a on the carrier 110 , and the LED chips 120 a are electrically connected to the carrier 110 a. Here, the LED chips 120a are electrically connected to the carrier 110a through the flip-chip bonding technique. Certainly, in other unillustrated embodiments, these LED chips are electrically connected to the carrier through wire bonding technology.
接着,步骤S22,形成一环形挡墙130c于承载器110a上,其中环形挡墙130c围绕发光二极管芯片120a。Next, step S22, forming an annular retaining wall 130c on the carrier 110a, wherein the annular retaining wall 130c surrounds the LED chip 120a.
接着,步骤S23,形成多个条形挡墙140c(或140d)于承载器110a上。条形挡墙140c(或140d)连接环形挡墙130c,且条形挡墙140c(或140d)与环形挡墙130c在承载器110a上定义出多个格子状凹槽C,而发光二极管芯片120a设置于格子状凹槽C内。此处,条形挡墙140c(或140d)的高度H4(或H5)相同于(或低于)环形挡墙130c的高度H3。环形挡墙130c的材质与条形挡墙140c(或140d)的材质具有不吸光且具有反射功能的特性,例如是硅、氧化硅、氮化硼、橡胶、有机高分子材料或金属。本实施例中,环形挡墙130c的材质可与条形挡墙140c(或140d)的材质相同或不同,于此并不加以限制。此处,环形挡墙130c为一连续的环形挡墙,而条形挡墙140c(或140d)可连续的条形挡墙与非连续的条形挡墙的组合。Next, step S23 , forming a plurality of bar-shaped retaining walls 140c (or 140d ) on the carrier 110a. The strip-shaped retaining wall 140c (or 140d) is connected to the annular retaining wall 130c, and the strip-shaped retaining wall 140c (or 140d) and the annular retaining wall 130c define a plurality of grid-shaped grooves C on the carrier 110a, and the LED chips 120a Set in the lattice groove C. Here, the height H4 (or H5) of the bar-shaped retaining wall 140c (or 140d) is the same as (or lower than) the height H3 of the annular retaining wall 130c. The material of the ring-shaped retaining wall 130c and the material of the bar-shaped retaining wall 140c (or 140d ) have characteristics of non-absorbing and reflective properties, such as silicon, silicon oxide, boron nitride, rubber, organic polymer material or metal. In this embodiment, the material of the ring-shaped retaining wall 130c may be the same as or different from that of the bar-shaped retaining wall 140c (or 140d ), which is not limited here. Here, the annular retaining wall 130c is a continuous annular retaining wall, and the strip-shaped retaining wall 140c (or 140d) may be a combination of a continuous strip-shaped retaining wall and a discontinuous strip-shaped retaining wall.
需说明的是,在本实施例中并不限定环形挡墙130c与条形挡墙140c(或140d)的形成顺序。也就是说,可先形成环形挡墙130c后,再形成条形挡墙140c(或140d);或者是,环形挡墙130c与承载器110a一体成型后,再形成条形挡墙140c(或140d)于承载器110a上;或者是,先形成条形挡墙140c(或140d)与承载器110a一体成型后,再形成环形挡墙130c,于此并不加以限制。此外,形成环形挡墙130c与条形挡墙140c(或140d)的方法可包括透过点胶机(未绘示)来进行点胶程序(此时,环形挡墙130c与条形挡墙140c(或140d)的材质例如是橡胶)或是透过光刻、蚀刻及电镀程序来形成(此时,环形挡墙130c与条形挡墙140c(或140d)的材质例如是金属)。It should be noted that, in this embodiment, the forming order of the ring-shaped retaining wall 130c and the strip-shaped retaining wall 140c (or 140d ) is not limited. That is to say, the annular retaining wall 130c can be formed first, and then the bar-shaped retaining wall 140c (or 140d) can be formed; ) on the carrier 110a; or, after forming the bar-shaped retaining wall 140c (or 140d) and the carrier 110a integrally, and then forming the annular retaining wall 130c, it is not limited here. In addition, the method of forming the ring-shaped retaining wall 130c and the strip-shaped retaining wall 140c (or 140d) may include performing a dispensing process through a glue dispenser (not shown) (at this time, the annular retaining wall 130c and the strip-shaped retaining wall 140c (or 140d ) is made of rubber, for example) or formed by photolithography, etching and electroplating (in this case, the material of the ring-shaped retaining wall 130c and the bar-shaped retaining wall 140c (or 140d ) is, for example, metal).
之后,步骤S24,填充一萤光胶体150于承载器110a的一承载区(即配置发光二极管芯片120a的区域)上内,其中萤光胶体150填满格子状凹槽C且至少覆盖发光二极管芯片120a。萤光胶体包150括至少一种萤光粉152及至少一种胶体154混合而成,且萤光粉152散布于胶体154内。需说明的是,填充萤光胶体150的方法例如是透过点胶机(未绘示)来进行点胶程序。为了避免点胶的过程中,萤光胶体150中的萤光粉152沉淀速度不一致,因此通常会于萤光胶体150中掺杂有抗沉淀剂,例如二氧化硅(SiO2)(未绘示)。再者,萤光胶体150中亦可填加有一光扩散剂(未绘示)来调整发光二极管封装结构100a所发出的光的颜色或均匀度等光学效果。Afterwards, step S24, filling a fluorescent gel 150 in a carrying area of the carrier 110a (that is, the area where the LED chip 120a is disposed), wherein the fluorescent gel 150 fills the grid-shaped groove C and at least covers the LED chip 120a. The fluorescent colloid package 150 is formed by mixing at least one phosphor powder 152 and at least one colloid 154 , and the phosphor powder 152 is dispersed in the colloid 154 . It should be noted that, the method of filling the fluorescent gel 150 is, for example, a dispensing process through a dispensing machine (not shown). In order to avoid the inconsistency of the sedimentation speed of the fluorescent powder 152 in the fluorescent colloid 150 during the dispensing process, the fluorescent colloid 150 is usually doped with an anti-precipitation agent, such as silicon dioxide (SiO 2 ) (not shown). ). Furthermore, a light diffusing agent (not shown) may also be added to the fluorescent gel 150 to adjust optical effects such as color or uniformity of the light emitted by the LED packaging structure 100a.
更具体来说,在本实施例中,当这些条形挡墙140c的高度H4相同于环形挡墙130c的高度H3时,填充萤光胶体150于承载器110a的承载区的步骤,可包括:将萤光胶体150依序填入格子状凹槽C,使萤光胶体150的一上表面151与环状挡墙130a的一顶面131及每一条形挡墙140a的一顶面141高度相同,请参考图4A。于另一实施例中,当这些条形挡墙140d的高度H5低于环形挡墙130c的高度H3时,填充萤光胶体150于承载器110a的承载区的步骤,包括:将萤光胶体150任意填入一部分的格子状凹槽C,接着直接进行后续步骤S23的离心程序,以使萤光胶体150向两侧流动以填满格子状凹槽C,且萤光胶体150覆盖于每一条形挡墙140d的一顶面143,请参考图4C。More specifically, in this embodiment, when the height H4 of these strip-shaped retaining walls 140c is the same as the height H3 of the annular retaining wall 130c, the step of filling the carrying area of the carrier 110a with the fluorescent gel 150 may include: Fill the fluorescent colloid 150 into the grid-shaped groove C in sequence, so that an upper surface 151 of the fluorescent colloid 150 is at the same height as a top surface 131 of the annular retaining wall 130a and a top surface 141 of each bar-shaped retaining wall 140a , please refer to Figure 4A. In another embodiment, when the height H5 of these bar-shaped retaining walls 140d is lower than the height H3 of the annular retaining wall 130c, the step of filling the carrying area of the carrier 110a with the fluorescent gel 150 includes: placing the fluorescent gel 150 Fill a part of the grid-shaped groove C arbitrarily, and then directly perform the centrifugation procedure of the subsequent step S23, so that the fluorescent colloid 150 flows to both sides to fill the grid-shaped groove C, and the fluorescent colloid 150 covers each strip Please refer to FIG. 4C for a top surface 143 of the retaining wall 140d.
接着,步骤S25,进行一离心程序以使萤光胶体150中的萤光粉152沉降于这些发光二极管芯片120a的表面上。此处,进行离心程序是采用离心机(未绘示)来实现,透过离心机的离心力将分散于胶体154内的萤光粉152沉降于这些发光二极管芯片120的表面上,可避免过多的萤光粉152囤积至承载器110a的闲置空间上而产生边壁黄晕现象。Next, in step S25 , a centrifugation procedure is performed to settle the fluorescent powder 152 in the fluorescent colloid 150 on the surfaces of the LED chips 120 a. Here, the centrifugation process is realized by using a centrifuge (not shown). The centrifugal force of the centrifuge will settle the fluorescent powder 152 dispersed in the colloid 154 on the surface of these LED chips 120, so as to avoid excessive The fluorescent powder 152 accumulated on the idle space of the carrier 110a produces a yellow halo phenomenon on the side wall.
最后,步骤S26,放置一烤箱进行一烘烤程序以固化萤光胶体150,而完成发光二极管封装结构100f、100g、100h、100i的制作。Finally, in step S26 , an oven is placed to perform a baking process to cure the fluorescent glue 150 , and complete the fabrication of the LED packaging structures 100f , 100g , 100h , 100i .
由于本实施例是先进行完离心程序后,即已使萤光胶体150中的萤光粉152分布于这些发光二极管芯片120a的表面上,才进行烘烤程序。相较于已知填充完萤光胶体后即进行烘烤程序而言,本实施例的发光二极管封装结构100f、100g、100h、100i的色度座标不易偏移或增大(拉长),即可较为集中,可具有较佳的色度表现。再者,当环形挡墙130c与这些条状挡墙140c具有相同的高度时,于进行离心程序时,可有效避免凹胶的现象产生。此外,透过离心程序亦可将萤光胶体150中的气泡脱离,而使所形成的发光二极管封装结构100f、100g、100h、100i具有较佳的光学表现。In this embodiment, after the centrifugation process is performed first, that is, the phosphor powder 152 in the fluorescent colloid 150 is distributed on the surfaces of the LED chips 120a, and then the baking process is performed. Compared with the known baking process after the fluorescent colloid is filled, the chromaticity coordinates of the light emitting diode packaging structures 100f, 100g, 100h, and 100i of this embodiment are not easy to shift or increase (elongate), That is, it can be more concentrated and have better chroma performance. Furthermore, when the ring-shaped retaining wall 130c has the same height as the strip-shaped retaining walls 140c, the phenomenon of concave glue can be effectively avoided during the centrifugation process. In addition, the air bubbles in the fluorescent colloid 150 can also be removed through the centrifugation process, so that the formed LED packaging structures 100f, 100g, 100h, and 100i have better optical performance.
综上所述,本发明的发光二极管芯片可采用倒装焊技术与承载器电性连接,因此在单位面积下可于承载器上配置较多的发光二极管芯片,即具有较多的芯片数量,可有效提高发光二极管封装结构的出光亮度。再者,由于本实施例的发光二极管封装结构具有第一环形挡墙与第二环形挡墙的搭配设计、环形挡墙、环形挡墙与条形挡墙的搭配设计,且萤光胶体的萤光粉是分布于发光二极管芯片的表面上。因此,发光二极管封装结构的周边不会聚集过多的萤光粉,即可减少承载器上的闲置空间,以使较多的萤光粉分布于发光二极管芯片的表面上,故可有效避免边壁产生黄晕现象。此外,由于第一环形挡墙、第二环形挡墙、环形挡墙及条形挡墙皆具有不吸光且具有反射功能的特性,因此可反射及散射发光二极管芯片所产生的色光,可有效提高发光二极管封装结构的出光亮度。简言之,本发明的发光二极管封装结构可呈现较佳的光学表现。To sum up, the light emitting diode chip of the present invention can be electrically connected to the carrier by flip-chip welding technology, so more light emitting diode chips can be placed on the carrier per unit area, that is, there are more chips, The light output brightness of the light emitting diode packaging structure can be effectively improved. Furthermore, since the light emitting diode packaging structure of this embodiment has the matching design of the first annular retaining wall and the second annular retaining wall, the collocation design of the annular retaining wall, the annular retaining wall and the strip retaining wall, and the fluorescent colloid The light powder is distributed on the surface of the LED chip. Therefore, too much fluorescent powder will not gather around the LED packaging structure, and the idle space on the carrier can be reduced, so that more fluorescent powder can be distributed on the surface of the LED chip, so that the edge can be effectively avoided. The wall produces a yellow halo phenomenon. In addition, since the first annular retaining wall, the second annular retaining wall, the annular retaining wall and the bar-shaped retaining wall all have the characteristics of not absorbing light and having a reflective function, they can reflect and scatter the colored light generated by the LED chip, which can effectively improve The light output brightness of the light emitting diode package structure. In short, the LED packaging structure of the present invention can exhibit better optical performance.
此外,本发明是透过离心机的离心力将分散于萤光胶体的胶体内的萤光粉沉降至发光二极管芯片的表面上,如此一来,萤光粉可平均分布于发光二极管芯片的表面,而避免萤光粉囤积分布的厚度不均一,而影响光学效果,或因过多的萤光粉囤积至承载器的闲置空间而产生边壁黄晕现象。再者,由于本实施例是先进行完离心程序后,即已使萤光胶体中的萤光粉分布于发光二极管芯片的表面上,才进行烘烤程序。相较于已知填充完萤光胶体后即进行烘烤程序而言,本发明的发光二极管封装结构的色度座标不易偏移或增大(拉长),即可较为集中,可具有较佳的色度表现。此外,当环形挡墙与条状挡墙具有相同的高度时,于进行离心程序时,可有效避免凹胶的现象产生。另外,透过离心程序亦可将萤光胶体中的气泡脱离,而使所形成的发光二极管封装结构具有较佳的光学表现。In addition, the present invention settles the fluorescent powder dispersed in the colloid of the fluorescent colloid onto the surface of the light-emitting diode chip through the centrifugal force of the centrifuge, so that the fluorescent powder can be evenly distributed on the surface of the light-emitting diode chip, To avoid the uneven thickness of the phosphor accumulation and distribution, which will affect the optical effect, or cause the yellow halo phenomenon on the side wall due to excessive phosphor accumulation in the idle space of the carrier. Furthermore, in this embodiment, after the centrifugation process is performed first, that is, the phosphor powder in the fluorescent colloid is distributed on the surface of the LED chip, and then the baking process is performed. Compared with the known baking process after filling the fluorescent colloid, the chromaticity coordinates of the light emitting diode packaging structure of the present invention are not easy to shift or increase (elongate), that is, it can be more concentrated, and can have more Good color performance. In addition, when the annular retaining wall and the strip retaining wall have the same height, the phenomenon of concave glue can be effectively avoided during the centrifugation process. In addition, the air bubbles in the fluorescent colloid can also be detached through the centrifugation process, so that the formed LED packaging structure has better optical performance.
值得一提的是,在上述本实施例中,挡墙可为一封闭环状或一非封闭环状,其中封闭环状例如是四边形、圆形、椭圆形、蛋形、星形或其他多边形,而非封闭环状例如是弧形、线形或随机变化曲线形。特别是,挡墙的形状可对应发光二极管芯片的外型,意即挡墙的形状与发光二极管的外型共形(conformal)设置。It is worth mentioning that, in the above-mentioned embodiment, the retaining wall can be a closed ring or a non-closed ring, wherein the closed ring is, for example, a quadrangle, a circle, an ellipse, an egg, a star or other polygons , and the non-closed loop is, for example, an arc, a line or a random changing curve. In particular, the shape of the wall can correspond to the shape of the LED chip, that is, the shape of the wall is conformal to the shape of the LED.
在上述实施例中,第一环形挡墙为一连续的环形挡墙,高度可以是等高或不等高变化。In the above embodiment, the first annular retaining wall is a continuous annular retaining wall, and its height can be equal or unequal.
在上述实施例中,第二环形挡墙为一连续的环形挡墙,高度可以是等高或不等高变化。In the above embodiment, the second annular retaining wall is a continuous annular retaining wall, and its height can be equal or unequal.
在上述实施例中,第一环形挡墙可以是不连续的环形挡墙,高度可以是等高或不等高变化。在一实施例中,第二环形挡墙可以是不连续的环形挡墙,高度可以是等高或不等高变化。In the above embodiment, the first annular retaining wall may be a discontinuous annular retaining wall, and the height may be equal or unequal. In an embodiment, the second annular retaining wall may be a discontinuous annular retaining wall, and the height may be of equal or unequal height.
在上述实施例中,第一环形挡墙可以是反射材料,或者是非反射材料表面涂布反射材料。In the above embodiments, the first annular retaining wall may be a reflective material, or a non-reflective material coated with a reflective material.
在上述实施例中,第二环形挡墙可以是反射材料,或者是非反射材料表面涂布反射材料。In the above embodiments, the second annular retaining wall may be a reflective material, or a non-reflective material coated with a reflective material.
在上述实施例中,萤光粉浓度分布状况会随着发光二极管芯片高度、第一环形挡墙高度、第二环形挡墙高度、发光二极管芯片及第一环形挡墙之间距离、第一环形挡墙及第二环形挡墙之间距离而变化。In the above-mentioned embodiment, the phosphor concentration distribution will vary with the height of the LED chip, the height of the first annular barrier, the height of the second annular barrier, the distance between the LED chip and the first annular barrier, the first annular barrier The distance between the retaining wall and the second annular retaining wall varies.
在上述实施例中,萤光粉浓度由萤光胶体表面往发光二极管芯片表面逐渐增加或减少。In the above embodiments, the concentration of phosphor powder increases or decreases gradually from the surface of the fluorescent colloid to the surface of the LED chip.
在上述实施例中,萤光粉浓度由发光二极管芯片表面往发光二极管芯片侧面逐渐增加或减少。In the above embodiments, the concentration of phosphor powder gradually increases or decreases from the surface of the LED chip to the side of the LED chip.
在上述实施例中,当萤光粉浓度由萤光胶体表面往发光二极管芯片表面逐渐增加或减少时,萤光粉浓度由发光二极管芯片表面往发光二极管芯片侧面逐渐增加或减少。In the above embodiment, when the concentration of phosphor powder gradually increases or decreases from the surface of the fluorescent colloid to the surface of the LED chip, the concentration of phosphor powder gradually increases or decreases from the surface of the LED chip to the side of the LED chip.
虽然本发明已以较佳实施例揭示如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的修改和完善,因此本发明的保护范围当以权利要求书所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the claims.
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CN103489984A (en) | 2014-01-01 |
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