CN107272279A - Dot structure and liquid crystal display panel - Google Patents
Dot structure and liquid crystal display panel Download PDFInfo
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- CN107272279A CN107272279A CN201710550557.6A CN201710550557A CN107272279A CN 107272279 A CN107272279 A CN 107272279A CN 201710550557 A CN201710550557 A CN 201710550557A CN 107272279 A CN107272279 A CN 107272279A
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- gate line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a kind of dot structure and liquid crystal display panel.Dot structure includes underlay substrate, the first metal layer, the first insulating barrier and transparent electrode layer.The first metal layer is formed on underlay substrate, and it includes the pattern of gate line.First insulating barrier is formed on the first metal layer, and transparent electrode layer is formed on the first insulating barrier.Transparent electrode layer includes first transparency electrode, and projection of the first transparency electrode on gate line is in the regional area of gate line, i.e. the first transparency electrode part corresponding with gate line is not exclusively covered on gate line.Liquid crystal display panel is the LCDs with above-mentioned dot structure.On the one hand the dot structure of the present invention can reduce the RC loads on gate line, the voltage provided on gate line is more stablized, reduce the influence to pixel charge rate.On the other hand, the influence of high low potential that gate line produces after the switch to transparency electrode is reduced so that do not occur side light leak at the gate line of plain structure, improve the aperture opening ratio of pixel, improve the display quality for the LCDs for possessing the dot structure.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of dot structure and the liquid crystal with the dot structure
Show panel.
Background technology
PSVA (Polmer Stabilized Vertivally Aligned, the homeotropic alignment liquid crystal of polymer stabilizing) mould
The LCDs of formula is the longitudinal electric field using vertical direction, to drive arranged perpendicular in the liquid crystal molecule on glass substrate,
So as to the LCDs for forming polymer stabilizing and being arranged vertically.The LCDs of the pattern is not when applying voltage to be black
Color dispaly state；After certain voltage is applied, the liquid crystal molecule of LCDs swings to horizontal direction, the liquid crystal display of the pattern
Shield for white displays state.
At present, in order to avoid black matrix bends the LCDs side light leak caused, the curved surface of existing PSVA patterns
LCDs forms one layer of shading electrode on gate line, and the shading electrode effectively reduces the side of curved surface LCDs
Face light leakage phenomena.However, on curved surface LCDs gate line shading electrode setting there is a problem in that：
1st, electric capacity is produced between gate line and shading electrode so that the parasitic capacitance of gate line becomes big so that gate line
RC retardation ratio phenomenon is serious, influences the charge rate of pixel；
2nd, because shading electrode is completely covered by gate line, therefore shading electrode is highly susceptible to the height on gate line
The influence of electric potential signal so that produce voltage difference between the public electrode on shading electrode and color membrane substrates, still result in liquid
The side light leak of crystal display screen.
The content of the invention
The technical problems to be solved by the invention are that the shading electrode set on the gate line of existing dot structure is increased
The parasitic capacitance of gate line, so that the RC retardation ratio phenomenon produced on gate line is serious, influences the charge rate of pixel, and shading
Electrode is highly susceptible to the influence of high low potential on gate line, therefore can cause side occur at the gate line of curved surface LCDs
Face light leakage phenomena.
In order to solve the above-mentioned technical problem, the liquid crystal the invention provides a kind of dot structure and with the dot structure
Display panel.
According to an aspect of the invention, there is provided a kind of dot structure, including
Underlay substrate；
The first metal layer on the underlay substrate is formed at, it includes the pattern of gate line；
It is formed at the first insulating barrier on the first metal layer；
The transparent electrode layer on first insulating barrier is formed at, it includes the pattern of first transparency electrode, described first
Transparency electrode is configured as making the liquid crystal corresponding to its position not overturn, and the first transparency electrode is on the gate line
Projection positioned at the gate line regional area in.
Preferably, the projection is positioned at the both sides of the axis of the gate line.
Preferably, the first transparency electrode is identical with the current potential of public electrode.
Preferably, the projected area accounts for the 40-60% of the maximum cross-section area of the horizontal direction of gate line.
Preferably, the first transparency electrode is rectangle, axis direction of the first transparency electrode along gate line
Multiple void regions are arranged at intervals with, the void region is set relative to the axisymmetrical of gate line.
Preferably, the first transparency electrode is rectangle, and the first transparency electrode has rectangle void region,
The rectangle void region is set relative to the axisymmetrical of gate line.
Preferably, the dot structure also includes：
The second metal layer on first insulating barrier is formed at, it includes the pattern of data wire；And
It is formed at the second insulating barrier in the second metal layer；
The transparent electrode layer also includes the pattern of pixel electrode, and the pixel electrode insulate with the first transparency electrode
Set.
Preferably, the transparent electrode layer also includes the pattern of second transparency electrode, and the second transparency electrode is in institute
The projection stated in second metal layer is located on the data wire, the pixel electrode and the second transparency electrode insulation set.
According to another aspect of the present invention there is provided a kind of liquid crystal display panel, it includes above-mentioned dot structure.
Preferably, above-mentioned liquid crystal display panel is the liquid crystal display panel of PSVA patterns.
Compared with prior art, one or more of such scheme embodiment can have the following advantages that or beneficial effect
Really：
The top of the gate line for the dot structure that the present invention is provided is covered with transparency electrode, and the orthographic projection of transparency electrode is only
In the regional area of gate line, that is to say, that the transparency electrode part corresponding with gate line is not exclusively covered in grid
On line.Compared with prior art, the transparency electrode of the application reduces the coverage rate with gate line, on the one hand reduces gate line
The parasitic capacitance produced after the switch with transparency electrode, reduces the RC loads on gate line so that the electricity provided on gate line
Pressure is more stablized, and improves the charge rate of pixel, on the other hand, reduces high low potential that gate line produces after the switch to transparent
The influence of electrode, is not overturn with the liquid crystal for ensureing corresponding between transparency electrode and public electrode, i.e., at corresponding pixel
In dark-state, make do not occur side leakage light at the gate line of dot structure to play, improve the aperture opening ratio of pixel, also improve simultaneously
The display performance of LCDs with the dot structure.
Other features and advantages of the present invention will be illustrated in the following description, and partly becomes from specification
It is clear that or being understood by implementing the present invention.The purpose of the present invention and other advantages can be by wanting in specification, right
Structure specifically noted in book and accompanying drawing is asked to realize and obtain.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, the reality with the present invention
Apply example to be provided commonly for explaining the present invention, be not construed as limiting the invention.In the accompanying drawings：
Fig. 1 shows the cross-sectional view of the dot structure of the embodiment of the present invention one；
Fig. 2 shows the top view of the dot structure of the embodiment of the present invention one；
Fig. 3 shows the top view of the dot structure of the embodiment of the present invention two；
Fig. 4 shows the structural representation of the LCDs for the dot structure for possessing embodiment one；
Fig. 5 shows the structural representation of the LCDs for the dot structure for possessing embodiment two.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, how the present invention is applied whereby
Technological means solves technical problem, and reaches the implementation process of technique effect and can fully understand and implement according to this.Need explanation
As long as not constituting each embodiment in conflict, the present invention and each feature in each embodiment can be combined with each other,
The technical scheme formed is within protection scope of the present invention.
Existing LCDs, is generally provided with black matrix above gate line, and the black matrix can realize liquid
Side shading at the gate line of crystal display screen.But in the manufacturing process of curved surface LCDs, the bending of display screen is set
Black matrix position is often set to shift, so as to cause that side leakage light occurs at the gate line of curved surface LCDs, influence is bent
The display effect of face LCDs.In order to solve the above problems, the curved surface LCDs of PSVA patterns is by grid line position
Corresponding black matrix is removed, and one layer of shading electrode is formed in the top of gate line, by controlling at shading electrode and public electrode
In same potential, to cause the corresponding liquid crystal of grid line position not overturn, it is to avoid side leakage optical issue occurs in grid line position,
To reach the purpose of curved surface LCDs side shading.However, because shading electrode is set to be completely covered by gate line,
It is easy to produce parasitic capacitance after gate line and shading electrode are powered, between them, so that the RC loads on gate line increase
Plus, the stability for the voltage that influence gate line is provided.Also, shading electrode is completely covered by gate line, gate line is being connected
The high low potential produced afterwards is easy to influence the current potential of shading electrode so that produce voltage between shading electrode and public electrode
Difference, so that the problem of causing to occur side light leak at the gate line of LCDs.
Embodiment one
To solve above-mentioned technical problem present in prior art, the embodiments of the invention provide a kind of dot structure.
Fig. 1 shows the cross-sectional view of according to embodiments of the present invention one dot structure.Fig. 2 is shown in Fig. 1
The top view of shown dot structure.
Referring to Figures 1 and 2, the present embodiment dot structure include underlay substrate 1, the first metal layer 2, the first insulating barrier 3, thoroughly
Prescribed electrode layer, the insulating barrier 5 of second metal layer 4 and second.
Specifically, the first metal layer 2 is formed on underlay substrate 1, and the first metal layer 2 includes the pattern of gate line 13.The
One insulating barrier 3 is formed on the first metal layer 2.Second metal layer 4 is formed on the first insulating barrier 3.Second metal layer 4 includes number
According to the pattern of line 14.Second insulating barrier 5 is formed in second metal layer 4.Transparent electrode layer is formed on the second insulating barrier 5, thoroughly
Prescribed electrode layer includes the pattern of first transparency electrode 15 and the figure for the pixel electrode 9 not electrically connected with first transparency electrode 15
Case.Preferably, the material of first transparency electrode and pixel electrode 9 is tin-doped indium oxide (ITO).
Projection of the first transparency electrode 15 on gate line 13 is in the regional area of gate line 13, first transparency electrode
15 projected area on gate line accounts for the 50% of the maximum cross-section area of the horizontal direction of gate line 13, specifically, due to this
Gate line 13 in embodiment is shaped as cuboid, therefore the maximum cross-section area of the horizontal direction of gate line 13 is gate line
The area of 13 upper surface.The shape of the cross section of first transparency electrode 15 in the horizontal direction is also rectangle, transparent first
Multiple void regions 16 are arranged at intervals with along the axis direction of gate line 13 on electrode 15, each void region 16 is to wait greatly small
Rectangle.Also, all void regions 16 are set both with respect to the axisymmetrical of gate line 13.Preferably, void region 16
Width be 4 μm.The area and width of void region 16 are defined, can be reduced between void region 16 and public electrode
The voltage difference of generation, make the upset situation of liquid crystal between first transparency electrode 15 and public electrode is not influenceed by the voltage difference.
It should be noted that the shape of void region 16 is not limited to rectangle, and first transparency electrode 15 and gate line phase
The form that corresponding part is not exclusively covered on gate line 13 is also not necessarily limited to the above-mentioned mode for making it have void region 16.On
It is only a kind of form for the area coverage for reducing first transparency electrode 15 and gate line 13 to state mode.
Further, first transparency electrode 15 is configured as making the liquid crystal corresponding to its position not overturn.Specifically
Ground, identical current potential is set to by first transparency electrode 15 and public electrode.When dot structure is in running order, due to
One transparency electrode 15 is identical with the current potential of public electrode, therefore corresponding liquid crystal point between first transparency electrode 15 and public electrode
Sub- two ends do not have voltage difference, so that the liquid crystal molecule will not deflect, corresponding pixel is in dark-state.Further, since first
Void region 16 is provided with transparency electrode 15, therefore the void region 16 reduces first transparency electrode 15 to a certain extent
With the area coverage of gate line 13.Therefore, after first transparency electrode 15 and gate line 13 are powered, correspondingly reduce them it
Between the parasitic capacitance that produces so that reduce gate line 13 it is in running order when RC loads, gate line 13 is provided
The voltage more stablized.Using the present embodiment, orthographic projection of the first transparency electrode 15 on the gate line of mountain is only positioned at gate line 13
Regional area in, that is to say, that the part corresponding with gate line of first transparency electrode 15 is not exclusively covered in gate line 13
On.Compared with prior art, the first transparency electrode 15 of the application reduces the coverage rate with gate line 13, on the one hand reduces
The parasitic capacitance that gate line 13 is produced after the switch with first transparency electrode 15, reduces the RC loads on gate line 13 so that
The voltage provided on gate line 13 is more stablized, and on the other hand, reduces the high low potential pair that gate line 13 is produced after the switch
The influence of first transparency electrode 15, is not turned over the liquid crystal for ensureing corresponding between first transparency electrode 15 and public electrode
Turn, corresponding pixel is in dark-state, makes do not occur side leakage light at the gate line 13 of dot structure to play, improves with the picture
The display performance of the LCDs of plain structure.
First transparency electrode 15 is set to same potential with public electrode, can make first transparency electrode 15 and gate line 13
Between corresponding liquid crystal two ends do not produce voltage difference so that liquid crystal is not overturn at this, corresponding pixel is in dark
State.Projected area of the first transparency electrode 15 on gate line accounts for the maximum cross-section area of the horizontal direction of gate line 13
50%, the setting of void region 16 effectively reduces the area coverage of first transparency electrode 15 and gate line 13.Pixel electrode 9
With the insulation set of first transparency electrode 15, it is easy to those skilled in the art to apply different voltages to it, to cause dot structure
Being capable of normal work.First transparency electrode 15 and pixel electrode 9 are set to identical material, are making the technique mistake of dot structure
Both can form simultaneously in journey, simplify the manufacturing process of the dot structure.
Embodiment two
Correspondingly, Fig. 3 shows the top view of dot structure according to a second embodiment of the present invention.Reference picture 3, this implementation
Structure of the example to the color blocking layer 6 of dot structure, the 3rd insulating barrier 7 and transparent electrode layer on the basis of embodiment one is limited
It is fixed.
Specifically, color blocking layer 6 is formed on the second insulating barrier 5, plays filter action.3rd insulating barrier 7 is formed at color blocking layer 6
Between transparent electrode layer, for making to insulate between color blocking layer 6 and transparent electrode layer.Meanwhile, transparent electrode layer also includes second
The pattern of transparency electrode 8, projection of the second transparency electrode 8 in second metal layer 4 is covered on data wire 14, pixel electrode 9
With the insulation set of second transparency electrode 8.
Therefore, the dot structure is in turn set to from down to up：Underlay substrate 1, the first metal layer 2, the first insulating barrier
3rd, second metal layer 4, the second insulating barrier 5, color blocking layer 6, the 3rd insulating barrier 7 and transparent electrode layer.Wherein, the first metal layer 2 is wrapped
The pattern of gate line 13 is included, second metal layer 4 includes the pattern of data wire 14, and transparent electrode layer includes the He of first transparency electrode 15
The pattern of second transparency electrode 8 and with the pixel electrode 9 of first transparency electrode and the equal insulation set of second transparency electrode 8
Pattern.
Projection of the first transparency electrode 15 on gate line 2 is in the regional area of gate line 13, first transparency electrode
15 projected area on gate line 2 accounts for the 40% of the horizontal the maximum cross-section area of gate line 13.Specifically, due to the embodiment
In gate line 13 be shaped as cuboid, so the maximum cross-section area of the horizontal direction of gate line 13 is the upper of gate line 13
The area on surface.First transparency electrode 15 is rectangle, and axis direction of the first transparency electrode 15 along gate line 13 has one
Rectangular void region 16, the void region 16 is set relative to the axisymmetrical of gate line 13.And preferably, the vacancy section
The width in domain 16 is 5 μm.The restriction effect of area and width to void region 16 is identical with embodiment one, herein no longer to it
Repeated.
It should be noted that the shape of void region 16 is not limited to rectangle, and first transparency electrode 15 and gate line phase
The form that corresponding part is not exclusively covered on gate line 13 is also not necessarily limited to the above-mentioned mode for making it have void region 16.On
It is only a kind of form for the area coverage for reducing first transparency electrode 15 and gate line 13 to state mode.
Projection of the second transparency electrode 8 in second metal layer 4 is located on data wire 14, and second transparency electrode 8 is configured
To make the liquid crystal corresponding to its position not overturn.Specifically, second transparency electrode 8 and public electrode are set to identical
Current potential.Corresponding liquid crystal molecule is not overturn between second transparency electrode 8 and public electrode.
Using the present embodiment, orthographic projection of the first transparency electrode 15 on gate line is also only positioned at the partial zones of gate line 13
In domain, that is to say, that the part corresponding with gate line of first transparency electrode 15 is not exclusively covered on gate line 13.With it is existing
Technology is compared, and the first transparency electrode 15 of the application reduces the coverage rate with gate line 13, on the one hand reduces gate line 13
The parasitic capacitance produced after the switch with first transparency electrode 15, reduces the RC loads on gate line 13 so that gate line 13
The voltage of upper offer is more stablized, on the other hand, reduces the high low potential that gate line 13 produces after the switch transparent to first
The influence of electrode 15, is not overturn with the liquid crystal for ensureing corresponding between first transparency electrode 15 and public electrode, to play
Make do not occur side leakage light at the gate line 13 of dot structure.
The setting of color blocking layer 6 can improve the dot structure and be used in the filter effect occurred when on curved surface LCDs
Bad the problem of.Projected area of the first transparency electrode 15 on gate line accounts for the maximum cross section of the horizontal direction of gate line 13
Long-pending 40%, the setting of void region 16 effectively reduces the area coverage of first transparency electrode 15 and gate line 13.Hollow out
The shape design rectangularity in region 16, with reference to the restriction to rectangular area and width, void region 16 is to a certain degree
It is upper to reduce first transparency electrode 15 and the area coverage of gate line 13.
Embodiment three
Correspondingly, Fig. 4 shows the structural representation of the LCDs for the dot structure for possessing above-described embodiment one.
Reference picture 4, the present embodiment LCDs is the LCDs of PSVA patterns, and the LCDs is curved surface
LCDs.The LCDs includes the dot structure of multiple structures of above-described embodiment one.
The dot structure of LCDs of the present invention also includes liquid crystal layer 10, common electrode layer 11, color blocking layer 6 and upper glass
Glass substrate 12.
Top glass substrate 12 is formed with above transparent electrode layer, color blocking layer 6 is formed on the downside of top glass substrate 12,
Be formed with common electrode layer 11 on the downside of color blocking layer 6, liquid crystal layer 10 be arranged at transparent electrode layer and common electrode layer 11 it
Between.
Using the present embodiment, wherein orthographic projection of the first transparency electrode 15 of dot structure on gate line is only positioned at grid
In the regional area of line 13, that is to say, that the part corresponding with gate line of first transparency electrode 15 is not exclusively covered in grid
On line 13.Compared with prior art, the first transparency electrode 15 of the application reduces the coverage rate with gate line 13, on the one hand subtracts
Lack the parasitic capacitance that gate line 13 is produced after the switch with first transparency electrode 15, reduce the RC loads on gate line 13,
So that the voltage provided on gate line 13 is more stablized, on the other hand, the height electricity that gate line 13 is produced after the switch is reduced
Influence of the position to first transparency electrode 15, does not occur with the liquid crystal for ensureing corresponding between first transparency electrode 15 and public electrode
Deflection, makes do not occur side leakage light at the gate line 13 of dot structure to play, improves the display performance of the LCDs, make
The display effect of LCDs is more preferably.
Example IV
Accordingly, Fig. 5 shows the structural representation of the LCDs for the dot structure for possessing above-described embodiment two.
Reference picture 5, the present embodiment is with the difference of embodiment three：The dot structure of LCDs of the present invention is also wrapped
Include liquid crystal layer 10, common electrode layer 11 and top glass substrate 12.
It is formed with above transparent electrode layer on top glass substrate 12, the downside of top glass substrate 12 and is formed with public electrode
Layer 11, liquid crystal layer 10 is arranged between transparent electrode layer and common electrode layer 11.
The present embodiment beneficial effect identical and resulting with the general principle of embodiment three is also identical, therefore herein
Place is no longer repeated the above.
While it is disclosed that embodiment as above, but described content is only to facilitate understanding the present invention and adopting
Embodiment, is not limited to the present invention.Any those skilled in the art to which this invention pertains, are not departing from this
On the premise of the disclosed spirit and scope of invention, any modification and change can be made in the implementing form and in details,
But protection scope of the present invention, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of dot structure, it is characterised in that including：
Underlay substrate；
The first metal layer on the underlay substrate is formed at, it includes the pattern of gate line；
It is formed at the first insulating barrier on the first metal layer；
The transparent electrode layer on first insulating barrier is formed at, it includes the pattern of first transparency electrode, described first is transparent
Electrode is configured as making the liquid crystal corresponding to its position not overturn, throwing of the first transparency electrode on the gate line
Shadow is located in the regional area of the gate line.
2. dot structure according to claim 1, it is characterised in that the projection is located at the two of the axis of the gate line
Side.
3. dot structure according to claim 1, it is characterised in that the current potential of the first transparency electrode and public electrode
It is identical.
4. dot structure according to claim 1, it is characterised in that the projected area accounts for the horizontal direction of gate line
The 40-60% of the maximum cross-section area.
5. dot structure according to claim 1, it is characterised in that the first transparency electrode is rectangle, described the
Axis direction of one transparency electrode along gate line is arranged at intervals with multiple void regions, and the void region is relative to gate line
Axisymmetrical is set.
6. dot structure according to claim 1, it is characterised in that the first transparency electrode is rectangle, described the
One transparency electrode has rectangle void region, and the rectangle void region is set relative to the axisymmetrical of gate line.
7. dot structure according to any one of claim 1 to 6, it is characterised in that also include：
The second metal layer on first insulating barrier is formed at, it includes the pattern of data wire；And
It is formed at the second insulating barrier in the second metal layer；
The transparent electrode layer also includes the pattern of pixel electrode, and the pixel electrode is set with first transparency electrode insulation
Put.
8. dot structure according to claim 7, it is characterised in that also include：
The transparent electrode layer also includes the pattern of second transparency electrode, and the second transparency electrode is in the second metal layer
Projection be located on the data wire, the pixel electrode and the second transparency electrode insulation set.
9. a kind of liquid crystal display panel, it is characterised in that including the dot structure as any one of claim 1-8.
10. liquid crystal display panel according to claim 9, it is characterised in that it is the liquid crystal display panel of PSVA patterns.
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| CN201710550557.6A CN107272279A (en) | 2017-07-07 | 2017-07-07 | Dot structure and liquid crystal display panel |
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| CN112379552A (en) * | 2020-12-03 | 2021-02-19 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| WO2024221501A1 (en) * | 2023-04-25 | 2024-10-31 | 广州华星光电半导体显示技术有限公司 | Display panel and preparation method therefor, and electronic device |
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