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CN107249257A - The IC support plate preparation methods of novel environment friendly - Google Patents

The IC support plate preparation methods of novel environment friendly Download PDF

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Publication number
CN107249257A
CN107249257A CN201710638255.4A CN201710638255A CN107249257A CN 107249257 A CN107249257 A CN 107249257A CN 201710638255 A CN201710638255 A CN 201710638255A CN 107249257 A CN107249257 A CN 107249257A
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Prior art keywords
copper
layer
implantation
ion implantation
substrate
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CN201710638255.4A
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Chinese (zh)
Inventor
廖斌
左帅
姜其立
庞盼
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Beijing Normal University
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Beijing Normal University
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/07Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process being removed electrolytically
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/188Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/092Particle beam, e.g. using an electron beam or an ion beam

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The invention discloses the IC support plate preparation methods of novel environment friendly, ion implanting surface metalation is carried out on its surface after being cleaned to substrate, layers of copper is plated to obtain in injection layer surface with electroless copper and copper plating technology by two methods progress;One layer of positive/negative property photoresist is coated in layers of copper, mask is recycled and obtains circuitous pattern through the processing such as overexposure, development;Finally the elements such as chip are mounted on support plate and encapsulated, then whole IC support plates are inlayed on circuit boards.Electroplating process and electrolytic process are constituted a circulation in the method that the present invention is provided, or only circuitous pattern part is injected and electroplated, therefore greatly reduces the pollution to environment and improves the utilization rate of metallic copper.High-accuracy, small size, the design of ultra-thin IC support plates not only optimize circuitous pattern and further increase circuit board overall performance simultaneously, also due to the flat smooth of ceramic substrate, so as to solve the problem of elements such as chip, resistance and electric capacity are high to substrate planarization requirement well.

Description

新型环保的IC载板制备方法New environmentally friendly IC substrate preparation method

技术领域technical field

本发明涉及一种IC载板的制备技术领域。The invention relates to the technical field of IC carrier board preparation.

背景技术Background technique

在电子设备当中几乎都会出现印制电路板(又称PCB),大小、功能、复杂程度都各不相同。电子产业的发展尤其是近年来3G智能手机、平板电脑等电子终端产业发展带来的产业革命不断升温,使得该类电子产品对PCB的需求不断增加。我国的PCB制造商不断在加大投入及扩张步伐,但对于高端电路板领域还有所欠缺,任意层HDI、软硬结合板、IC载板是当今发展最快,目前应用在通信、电子最新科技产品中最为高端的印制板品种。Printed circuit boards (also known as PCBs) appear almost everywhere in electronic equipment, and vary in size, function, and complexity. The development of the electronics industry, especially the industrial revolution brought about by the development of electronic terminal industries such as 3G smartphones and tablet computers in recent years, has continued to heat up, making the demand for PCBs for such electronic products continue to increase. my country's PCB manufacturers are constantly increasing investment and expansion, but there is still a lack of high-end circuit boards. Any layer HDI, soft and hard boards, and IC carrier boards are the fastest growing today. They are currently used in communications and electronics. The most high-end printed circuit board variety in scientific and technological products.

近年来,我国的电子工业迅速发展,印制电路板(PCB)的产量也日益增加,造成了大量的电路板腐蚀废液的产生和排放。据文献报道,年生产10万平方米的印制电路板厂,年用水量约60万吨,其产生的污水至少48万吨。其中,在蚀刻电路板的废液中含有大量的铜离子,不能得到很好的回收利用,造成大量铜的流失浪费,而目前我国的铜资源储量少,大型铜矿少,但由于铜工业的迅猛发展,对于对铜的需求量却非常大,自身的铜产量早已不能满足所需,从而需要从秘鲁、智利等国外大量进口。In recent years, my country's electronics industry has developed rapidly, and the output of printed circuit boards (PCBs) has also increased day by day, resulting in the generation and discharge of a large number of circuit board corrosion waste liquids. According to literature reports, a printed circuit board factory with an annual production of 100,000 square meters consumes about 600,000 tons of water and produces at least 480,000 tons of sewage. Among them, the waste liquid of etching circuit boards contains a large amount of copper ions, which cannot be well recycled, resulting in the loss and waste of a large amount of copper. At present, my country's copper resource reserves are small, and there are few large-scale copper mines. However, due to the development of the copper industry With rapid development, the demand for copper is very large, and its own copper production can no longer meet the needs, so it needs to import a large amount from Peru, Chile and other foreign countries.

而本发明中提出的方法,第一种制备过程中永电解法处理铜,且电解过程与电镀过程组成循环,电解液可循环利用。第二种过程仅对电路图形区域电镀,直接省却了刻蚀过程。两种方法都极大地减少了环境污染并有效的节约了铜金属资源。In the method proposed in the present invention, copper is treated by permanent electrolysis in the first preparation process, and the electrolysis process and the electroplating process form a cycle, and the electrolyte can be recycled. The second process only electroplates the circuit pattern area, directly saving the etching process. Both methods greatly reduce environmental pollution and effectively save copper metal resources.

发明内容Contents of the invention

本发明在电路板制备过程中,IC载板的设计让整个电路板小型化、高密度化,功能也更加强大,弥补当前国内在高端印制板领域的不足,同时第一种制备过程中采用电解过程取代传统的刻蚀过程,且将电解步骤与电镀铜步骤组成一个循环。第二种制备过程采用直接在电路图形区域镀铜的方法,省去了刻蚀过程。在目前由于电路板行业迅速发展所带来的环境污染以及资源短缺问题中,达到减少环境污染和节约铜资源的目的。In the process of circuit board preparation, the design of the IC carrier board makes the entire circuit board miniaturized, high-density, and more powerful, making up for the current domestic deficiencies in the field of high-end printed boards. At the same time, the first preparation process uses The electrolysis process replaces the traditional etching process, and the electrolysis step and the copper electroplating step are combined into a cycle. The second preparation process adopts the method of directly plating copper on the circuit pattern area, omitting the etching process. In the current environmental pollution and resource shortage problems caused by the rapid development of the circuit board industry, the purpose of reducing environmental pollution and saving copper resources is achieved.

鉴于此,本发明提供了一种新型环保的IC载板制备方法,其中又包括两种不同的制备过程:In view of this, the present invention provides a novel environment-friendly IC substrate preparation method, which includes two different preparation processes:

第一种制备过程包括以下步骤:S110,制作标准的PCB电路板,IC载板以陶瓷为基底;S120,对基底清洗后在其表面进行离子注入,完成后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层;S130,在铜层上涂覆一层正性光刻胶,再利用掩模版并经过曝光、显影等处理得到电路图形;S140,然后用电解法处理样板上除电路图形以外的铜,最后将处理好的IC载板镶嵌在PCB电路板上。The first preparation process includes the following steps: S110, making a standard PCB circuit board, and the IC substrate is based on ceramics; S120, cleaning the substrate and performing ion implantation on its surface. The copper layer is plated on the surface of the injection layer; S130, coat a layer of positive photoresist on the copper layer, and then use the mask plate to obtain the circuit pattern through exposure, development, etc.; S140, and then use the electrolytic method to process the sample Copper other than circuit graphics, and finally the processed IC substrate is embedded on the PCB circuit board.

第二种制备过程包括以下步骤:S110,制作标准的PCB电路板,IC载板以陶瓷为基底;S120,在基底上涂覆一层负性光刻胶,再利用掩模版并经过曝光、显影等处理在得到电路图形;S130,将样板清洗后在其表面上进行离子注入;S140,注入后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层,最后将处理好的IC载板镶嵌在PCB电路板上。The second preparation process includes the following steps: S110, making a standard PCB circuit board, and the IC substrate is based on ceramics; S120, coating a layer of negative photoresist on the substrate, and then using a mask plate to expose and develop Wait for the treatment to obtain the circuit pattern; S130, clean the sample and perform ion implantation on its surface; S140, after implantation, use electroless copper plating and electroplating copper plating technology to plate a copper layer on the surface of the implanted layer, and finally place the processed IC The carrier board is embedded on the PCB circuit board.

优选地,根据权利要求1所述的方法,其特征在于,在丙酮中对样板表面进行超声波清洗。Preferably, the method according to claim 1, characterized in that, the sample surface is cleaned ultrasonically in acetone.

进一步优选地,根据权利要求1所述的方法,其特征在于,IC载板以陶瓷为基底,在其表面采用金属真空蒸汽离子源(MEVVA)离子注入设备进行离子注入。Further preferably, the method according to claim 1, characterized in that the IC carrier board is based on ceramics, and ion implantation is performed on the surface thereof using a Metal Vacuum Vapor Ion Source (MEVVA) ion implantation device.

优选地,根据权利要求1所述的方法,其特征在于,所述离子注入的注入元Preferably, the method according to claim 1, characterized in that the implantation element of the ion implantation

素为金属元素Ni,Cu,Fe,Au,Ti或Ag。The elements are metal elements Ni, Cu, Fe, Au, Ti or Ag.

优选地,根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,其注入电压为0~50kV,束流强度为0~10mA,注入剂量为1×1015~1×1017/cm2Preferably, the method according to claim 1, characterized in that ion implantation is performed on the surface of the ceramic substrate by using metal vacuum vapor ion source (MEVVA) ion implantation equipment, the implantation voltage is 0-50kV, and the beam intensity is 0-50kV. 10mA, the injection dose is 1×10 15 -1×10 17 /cm 2 .

优选地,根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,注入深度为0~300nm。Preferably, the method according to claim 1, characterized in that ion implantation is performed on the surface of the ceramic substrate by using metal vacuum vapor ion source (MEVVA) ion implantation equipment, and the implantation depth is 0-300 nm.

优选地,一种新型环保的IC载板制备方法,其特征在于:利用金属真空蒸汽离子源对系统级封装陶瓷基底进行表面金属化处理;Preferably, a novel environment-friendly IC carrier preparation method is characterized in that: using a metal vacuum vapor ion source to carry out surface metallization treatment on the system-in-package ceramic substrate;

进一步优选地,一种新型环保的IC载板制备方法,其特征在于,先得到电路图形再进行离子注入处理再加厚处理或先离子注入处理再加厚处理再得到图形。Further preferably, a novel environment-friendly method for preparing an IC carrier board is characterized in that the circuit pattern is first obtained and then ion implanted and then thickened, or the ion implanted and then thickened before obtaining the pattern.

优选地,根据权利要求2所述的方法,其特征在于,对基底清洗后在其表面进行离子注入,完成后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层;在铜层上涂覆一层正性光刻胶,再利用掩模版并经过曝光、显影等处理得到电路图形;然后用电解法处理样板上除电路图形以外的铜,最后将处理好的IC载板镶嵌在PCB电路板上。Preferably, the method according to claim 2, characterized in that, after the substrate is cleaned, ion implantation is carried out on its surface, and after completion, a copper layer is plated on the surface of the implanted layer with electroless copper plating and electroplating copper technology; Coating a layer of positive photoresist on the layer, and then using the mask plate to obtain the circuit pattern through exposure, development, etc.; then electrolytically treat the copper on the sample plate except for the circuit pattern, and finally inlay the processed IC substrate on the PCB circuit board.

优选地,根据权利要求2所述的方法,其特征在于,一种新型环保的IC载板制备方法,其特征在于:在基底上涂覆一层负性光刻胶,再利用掩模版并经过曝光、显影等处理在得到电路图形;将样板清洗后在其表面上进行离子注入;注入后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层,最后将处理好的IC载板镶嵌在PCB电路板上。Preferably, the method according to claim 2, characterized in that it is a novel environment-friendly IC substrate preparation method, characterized in that: a layer of negative photoresist is coated on the substrate, and then the mask plate is used and passed through Exposure, development and other treatments are used to obtain circuit patterns; after the sample is cleaned, ion implantation is carried out on its surface; after implantation, a copper layer is plated on the surface of the implanted layer by electroless copper plating and electroplating copper technology, and finally the processed IC is loaded The board is embedded on the PCB circuit board.

优选地,根据权利要求1所述的方法,其特征在于,所述离子注入的注入元素为金属元素Ni,Cu,Fe,Au,Ti或Ag。Preferably, the method according to claim 1, characterized in that the implanted element of the ion implantation is metal element Ni, Cu, Fe, Au, Ti or Ag.

优选地,根据权利要求书1所述方法,其特征在于离子注入处理的设备为连续宽束处理设备,处理直径为300~900mm,束流为10~50mA,处理能力为2m/min。Preferably, the method according to claim 1, characterized in that the equipment for ion implantation treatment is a continuous wide-beam treatment equipment, with a treatment diameter of 300-900 mm, a beam current of 10-50 mA, and a treatment capacity of 2 m/min.

优选地,根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,其注入电压为0~50kV,注入剂量为1×1015~1×1017/cm2Preferably, the method according to claim 1, characterized in that ion implantation is performed on the surface of the ceramic substrate by using metal vacuum vapor ion source (MEVVA) ion implantation equipment, the implantation voltage is 0-50kV, and the implantation dose is 1×10 15 to 1×10 17 /cm 2 .

优选地,根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,注入深度为0~300nm。Preferably, the method according to claim 1, characterized in that ion implantation is performed on the surface of the ceramic substrate by using metal vacuum vapor ion source (MEVVA) ion implantation equipment, and the implantation depth is 0-300 nm.

优选地,根据权利要求2所述的方法,其特征在于,电镀铜所电镀的铜层的厚度为10~20um。Preferably, the method according to claim 2, characterized in that the copper layer electroplated by the copper electroplating has a thickness of 10-20 um.

优选地,根据权利要求3所述的方法,其特征在于,过程中电解处理和电镀处理组成一个循环,以敷铜板为阳极,以经过注入和化学镀铜处理后的样板为阴极。Preferably, the method according to claim 3, characterized in that the electrolytic treatment and electroplating treatment constitute a cycle in the process, the copper-clad plate is used as the anode, and the template after implantation and electroless copper plating is used as the cathode.

相对于现有技术,本发明实施例具有以下优势:Compared with the prior art, the embodiments of the present invention have the following advantages:

1、本发明提出的采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入以改变基底材料电学性能,MEVVA离子注入在陶瓷基底表面注入的离子浓度、深度分布可精确控制,注入金属元素可选范围广。1. The metal vacuum vapor ion source (MEVVA) ion implantation equipment proposed by the present invention is used to perform ion implantation on the surface of the ceramic substrate to change the electrical properties of the substrate material. The ion concentration and depth distribution of the MEVVA ion implantation implanted on the surface of the ceramic substrate can be accurately controlled. There is a wide range of options for injecting metal elements.

2、本发明提出的第一种制备过程中使用电解法电解敷铜板上除电路图形外的铜,其中电解液可以循环利用,相比于会产生大量污染刻蚀废液传统的刻蚀过程,极大的减少了对环境的污染。2. In the first preparation process proposed by the present invention, the electrolytic method is used to electrolyze the copper on the copper clad plate except the circuit pattern, wherein the electrolyte can be recycled, compared with the traditional etching process that will produce a large amount of polluted etching waste, Greatly reduce the pollution to the environment.

3、本发明提出的第一种制备过程中把电解过程与电镀铜过程组成一个循环,在电解敷铜板上除电路图形外的铜的同时又将这些铜用于电镀铜过程,从而大大提高了金属铜的利用率。3. In the first preparation process proposed by the present invention, the electrolysis process and the copper electroplating process are formed into a cycle, and these coppers are used for the copper electroplating process while the copper on the electrolytic copper clad plate except the circuit pattern is used for the copper electroplating process, thereby greatly improving Utilization of copper metal.

4、本发明提出的第二种制备过程中在镀铜时,由于仅对电路图形部分进行镀铜,故不需要刻蚀过程来刻蚀多余的铜,因而不会产生对污染环境且难以处理的刻蚀废液,减少了对环境的污染。4. During copper plating in the second preparation process proposed by the present invention, since only the circuit pattern part is copper-plated, an etching process is not required to etch excess copper, thus no pollution to the environment and difficult to handle The etching waste liquid reduces the pollution to the environment.

5、本发明提出的第二种制备过程中在镀铜时,由于只对电路图形部分进行镀铜,相比于传统技术需要对整个板面进行镀铜而言,很大程度上节约了铜金属资源。5. During copper plating in the second preparation process proposed by the present invention, since only the circuit pattern part is copper-plated, compared with the traditional technology that needs to copper-plate the entire board surface, copper is largely saved. metal resources.

6、本发明中制作的芯片等元件所在的IC载板体积小,板层薄,具有更高的精度,提高了电路板的整体性能。6. The IC carrier board on which the chip and other components produced in the present invention are located is small in volume, thin in board layer, has higher precision, and improves the overall performance of the circuit board.

7、本发明中将制作的芯片等元件所在的IC载板镶嵌在匹配的PCB电路板上,传统的PCB电路板基底是表面粗糙的环氧树脂等,而芯片等元件对平整性要求较高,本发明的载板基底是表面光滑平整的陶瓷,因此在平整性的方面得到了优化。7. In the present invention, the IC carrier board where the produced chips and other components are located is embedded on the matching PCB circuit board. The traditional PCB circuit board base is rough epoxy resin, etc., while chips and other components have higher requirements for flatness , the carrier substrate of the present invention is a ceramic with a smooth and even surface, so it is optimized in terms of flatness.

8、本发明中以陶瓷作为基板,材料成本低,且具有良好的导热性和气密性,同时本发明中的氧化铝的陶瓷材料还具有与半导体硅相匹配的热膨胀系数、高热稳定性、化学稳定性和低介电常数。8. In the present invention, ceramics are used as the substrate, the material cost is low, and it has good thermal conductivity and air tightness. At the same time, the ceramic material of alumina in the present invention also has a thermal expansion coefficient, high thermal stability, chemical stability and low dielectric constant.

附图说明Description of drawings

构成本发明实施例一部分的附图用来提供对本发明实施例的进一步理解,本发明的附图及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:The accompanying drawings constituting a part of the embodiments of the present invention are used to provide a further understanding of the embodiments of the present invention. The accompanying drawings and their descriptions of the present invention are used to explain the present invention and do not constitute improper limitations to the present invention. In the attached picture:

图1为本发明实施例提供的一种新型环保的IC载板制备方法的流程示意图;Fig. 1 is a schematic flow diagram of a novel environmentally friendly IC carrier preparation method provided by an embodiment of the present invention;

图2为本发明实施例提供的一种电路板表面示意图;Fig. 2 is a schematic diagram of the surface of a circuit board provided by an embodiment of the present invention;

图3为本发明实施例提供的电路板结构成分示意图;FIG. 3 is a schematic diagram of circuit board structural components provided by an embodiment of the present invention;

图4为本发明实施例提供的MEVVA注入系统的结构示意图;Fig. 4 is the structural representation of the MEVVA injection system provided by the embodiment of the present invention;

图5为本发明中第一种制备过程实施例提供的电解过程与电镀铜过程的结构示意图;Fig. 5 is the structural representation of the electrolysis process and electroplating copper process that the first kind of preparation process embodiment provides among the present invention;

附图标记说明Explanation of reference signs

100 PCB电路板100 PCB circuit boards

110 IC载板110 IC carrier board

120 芯片等元件120 chips and other components

200 陶瓷基底200 ceramic base

210 注入——扩散层210 Injection - diffusion layer

220 铜层220 copper layers

300 MEVVA离子源300 MEVVA ion source

310 束斑310 beam spots

320 出片口320 film outlet

330 装样位置330 sample loading position

340 传送履带340 conveyor track

350 传动转轴350 drive shaft

360 抽真空系统360 vacuum system

370 离子源阴极370 Ion Source Cathode

400 电源400 power

410 电解池410 electrolytic cell

420 阳极420 anode

430 电解液430 Electrolyte

440 阴极440 Cathode

具体实施步骤Specific implementation steps

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

需要说明的是,在不冲突的情况下,本发明实施例及实施例中的特征可以相互组合。It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

下面结合附图,对本发明的各优选实施例作进一步说明:Below in conjunction with accompanying drawing, each preferred embodiment of the present invention is described further:

方法实施例method embodiment

近些年来,电子行业飞速发展并早已普及到人们的日常生活中,而几乎所有的电子产品都有电路板元件,其带来的污染废液和金属铜的消耗问题也越来越严重,本发明提出的方法中两种制备过程都能极大地减少环境污染,同时又能有效地提高金属铜的利用率从而节约铜金属资源。In recent years, the electronics industry has developed rapidly and has been widely used in people's daily life, and almost all electronic products have circuit board components, which bring more and more serious problems of polluting waste liquid and metal copper consumption. The two preparation processes in the method proposed by the invention can greatly reduce environmental pollution, and at the same time can effectively improve the utilization rate of metal copper so as to save copper metal resources.

第一种制备过程,图1为本发明实施例提供一种新型环保的IC载板制备方法的流程示意图,其具体流程如图1所示:The first preparation process, Figure 1 is a schematic flow diagram of a new environmentally friendly IC substrate preparation method provided by the embodiment of the present invention, and its specific process is shown in Figure 1:

S110,制作标准的PCB电路板,IC载板以陶瓷为基底;S110, making standard PCB circuit boards, IC substrates are based on ceramics;

本步骤中,先制作一块标准的PCB电路板,选取陶瓷作为IC载板的基底。In this step, a standard PCB circuit board is made first, and ceramics are selected as the substrate of the IC carrier board.

S120,对基底清洗后在其表面进行离子注入,完成后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层;S120, performing ion implantation on the surface of the substrate after cleaning, and successively using electroless copper plating and electroplating copper plating techniques to form a copper layer on the surface of the implanted layer;

本步骤中,对IC载板的陶瓷基底进行表面清洗,目的是为了去除基底表面的灰尘、大颗粒等其他杂质,可选地是,在丙酮等溶剂中进行超声波清洗,清洗之后用金属真空蒸汽离子源(MEVVA)离子注入设备对其表面进行注入,设备结构如图4所示,注入形成图3中的注入——扩散层,其中可选地是,注入的元素可以是所有的金属元素,优选地是Ni,Fe,Au,Ti,Cu或Ag,本发明中所选的注入元素为Ni,其注入电压为0~50kV,束流强度为0~10mA,注入剂量为1×1015~1×1017/cm2,注入深度为0~300nm。将注入完成后的样板先进行初步清洗以去除油污及其他杂质,可选地是,在无水乙醇或丙酮中对其超声波清洗,再将样板放入PtCl4溶液中,由于活度的强弱,注入的Ni会将Pt4+离子置换出来形成Pt单质,Pt单质对陶瓷表面有催化活化的作用,有利于化学镀铜的进一步进行,随后将样板放入化学镀的镀液中镀上一层薄铜层。然后在这层薄铜层上用电镀铜技术电镀一层铜层,形成的图3所示的铜层,其中可选的是,电镀铜层厚度为10~20um。在这个步骤中,电镀铜过程与最后一个步骤中的电解过程其实是一个循环,即在进行电解过程时也进行电镀铜过程。In this step, the surface cleaning of the ceramic substrate of the IC carrier board is carried out in order to remove other impurities such as dust and large particles on the surface of the substrate. Ion source (MEVVA) ion implantation equipment is implanted on its surface, the equipment structure is as shown in Figure 4, implantation forms the implantation in Figure 3-diffusion layer, wherein optionally, the implanted elements can be all metal elements, It is preferably Ni, Fe, Au, Ti, Cu or Ag. The implanted element selected in the present invention is Ni, the implantation voltage is 0-50kV, the beam current intensity is 0-10mA, and the implantation dose is 1×10 15 ~ 1×10 17 /cm 2 , and the implantation depth is 0-300nm. After the injection is completed, the template is firstly cleaned to remove oil and other impurities. Optionally, it is ultrasonically cleaned in absolute ethanol or acetone, and then the template is placed in the PtCl 4 solution. Due to the strength of the activity , the implanted Ni will replace Pt 4+ ions to form Pt simple substance, Pt simple substance can catalyze and activate the ceramic surface, which is conducive to the further progress of electroless copper plating, and then put the sample into the electroless plating bath to plate a layer of thin copper. Then, a layer of copper is electroplated on the thin copper layer by electroplating copper technology to form the copper layer shown in FIG. 3 , wherein optionally, the thickness of the electroplating copper layer is 10-20 um. In this step, the copper electroplating process and the electrolytic process in the last step are actually a cycle, that is, the copper electroplating process is also performed during the electrolytic process.

S130,在铜层上涂覆一层正性光刻胶,再利用掩模版并经过曝光、显影等处理得到电路图形;S130, coating a layer of positive photoresist on the copper layer, and then using a mask plate to obtain a circuit pattern through exposure and development;

本步骤中,先将镀铜后的样板用正性光刻胶涂覆,可选地是,对上述涂覆完成后的陶瓷样板进行前烘(软烘)处理除去光刻胶中大部分溶剂以及稳定光刻胶的感光特性,之后把带有如图2所示的电路图形的掩模版覆在光刻胶上,然后将样板曝光处理,曝光后把样板放入显影液里显影,对于本实施例中的正性光刻胶,就是将曝光区域的光刻胶在显影液中溶解掉,即曝光显影后有光刻胶的部分为转移的电路图形,经过上述处理后的样板再进行后烘(硬烘、坚膜)处理使余下的胶膜硬化。In this step, the sample plate after copper plating is first coated with a positive photoresist, and optionally, the ceramic sample plate after the above coating is completed is pre-baked (soft baked) to remove most of the solvent in the photoresist And stabilize the photosensitive properties of the photoresist, then cover the photoresist with the mask plate with the circuit pattern as shown in Figure 2, then expose the template, and put the template into the developing solution after exposure for development, for this implementation The positive photoresist in the example is to dissolve the photoresist in the exposed area in the developer, that is, the part with photoresist after exposure and development is the transferred circuit pattern, and the sample after the above treatment is post-baked (hard baking, hard film) treatment to harden the remaining film.

S140,然后用电解法处理样板上除电路图形以外的铜,最后将处理好的IC载板镶嵌在PCB电路板上。S140, and then electrolytically process the copper on the sample board except for the circuit pattern, and finally embed the processed IC carrier board on the PCB circuit board.

不步骤中,如图5所示,如S120过程中所述,电解过程与电镀铜过程组成一个循环,电解液的主要成分为硫酸铜与硫酸,其他还有诸如Cl-离子之类的活化剂以及添加剂等用以辅助电解与电镀,以完成上述步骤后的敷铜板为阳极,以S120过程中需要电镀的样板为阴极,在阳极上电解掉除电路图形外的铜,同时又将这些铜用于阴极上的电镀。最后,去除板面上剩下的光刻胶。再将芯片、电阻、电容等元件装在处理好的IC载板上,并将IC载板镶嵌在S110过程中制作好的PCB基板上,如图2所示。In the different steps, as shown in Figure 5, as described in the S120 process, the electrolysis process and the copper electroplating process form a cycle. The main components of the electrolyte are copper sulfate and sulfuric acid, and there are other activators such as Cl- ions And additives are used to assist electrolysis and electroplating. The copper clad plate after the above steps is used as the anode, and the sample that needs to be electroplated in the S120 process is used as the cathode. The copper other than the circuit pattern is electrolyzed on the anode, and the copper is used Electroplating on the cathode. Finally, remove the remaining photoresist on the board. Then install chips, resistors, capacitors and other components on the processed IC carrier board, and embed the IC carrier board on the PCB substrate made in the S110 process, as shown in Figure 2.

第二种制备过程,图1为本发明实施例提供一种新型环保的IC载板制备方法的流程示意图,其具体流程如图1所示:The second preparation process, Figure 1 is a schematic flow diagram of a new environmentally friendly IC substrate preparation method provided by the embodiment of the present invention, and its specific process is shown in Figure 1:

S110,制作标准的PCB电路板,IC载板以陶瓷为基底;S110, making standard PCB circuit boards, IC substrates are based on ceramics;

本步骤中,先制作一块标准的PCB电路板,选取绝缘且耐热性能较好的陶瓷作为IC载板的基底。In this step, a standard PCB circuit board is made first, and ceramics with good insulation and heat resistance are selected as the substrate of the IC carrier board.

S120,在基底上涂覆一层负性光刻胶,再利用掩模版并经过曝光、显影等处理在得到电路图形;S120, coating a layer of negative photoresist on the substrate, and then using a mask plate to obtain a circuit pattern through exposure, development and other treatments;

本步骤中,先将陶瓷基底脱水烘烤,主要目的是去除陶瓷基底表面可能吸附的水分,再对陶瓷基底进行增粘处理以增加板面与光刻胶的粘附性,处理后在陶瓷表面涂覆一层负性光刻胶。对上述涂覆完成后的陶瓷样板进行前烘(软烘)处理除去光刻胶中大部分溶剂以及稳定光刻胶的感光特性,之后把有电路图形的掩模版覆盖在光刻胶上,然后将样板曝光处理,曝光后把样板放入显影液里显影,对于本制备过程中的负性光刻胶,就是将未曝光区域的光刻胶在显影液中溶解掉,即曝光显影后未有光刻胶的部分为转移的电路图形,经过上述处理后的样板再进行后烘(硬烘、坚膜)处理使余下的胶膜硬化。In this step, the ceramic substrate is first dehydrated and baked, the main purpose is to remove the moisture that may be adsorbed on the surface of the ceramic substrate, and then the ceramic substrate is treated to increase the adhesion between the board surface and the photoresist, and after the treatment, the ceramic surface Apply a layer of negative photoresist. Carry out pre-baking (soft baking) treatment to the above-mentioned coated ceramic template to remove most of the solvent in the photoresist and stabilize the photosensitive properties of the photoresist, then cover the photoresist with a mask plate with a circuit pattern, and then Expose the sample, put the sample into the developing solution after exposure, and for the negative photoresist in this preparation process, the photoresist in the unexposed area is dissolved in the developing solution, that is, there is no photoresist after exposure and development. The part of the photoresist is the transferred circuit pattern, and the sample after the above treatment is subjected to post-baking (hard baking, hard film) treatment to harden the remaining film.

S130,将样板清洗后在其表面上进行离子注入;S130, performing ion implantation on the surface of the sample after cleaning;

本步骤中,将上述的样板先进行表面清洗,可选地,在丙酮等溶剂中进行超声波清洗,目的是为了去除基底表面的灰尘、大颗粒等其他杂质,清洗之后用结构如图4所示金属真空蒸汽离子源(MEVVA)离子注入设备对其表面进行离子注入,其中可选地是,其中可选地是,注入的元素可以是所有的金属元素,优选地是Ni,Fe,Au,Ti,Cu或Ag,本发明中所选的注入元素为Ni,注入电压为0~50kV,束流强度为0~10mA,注入剂量为1×1015~1×1017/cm2,注入深度为0~300nm,注入过程其实就是在样板上有电路图形的部分注入了金属Ni,形成图3中的注入——扩散层。In this step, the surface of the above sample is first cleaned, and optionally, ultrasonic cleaning is performed in a solvent such as acetone, the purpose is to remove dust, large particles and other impurities on the surface of the substrate. After cleaning, the structure is shown in Figure 4. Metal Vacuum Vapor Ion Source (MEVVA) ion implantation equipment performs ion implantation on its surface, wherein optionally, wherein optionally, the implanted elements can be all metal elements, preferably Ni, Fe, Au, Ti , Cu or Ag, the implanted element selected in the present invention is Ni, the implantation voltage is 0-50kV, the beam intensity is 0-10mA, the implantation dose is 1×10 15 ~1×10 17 /cm 2 , and the implantation depth is 0 ~ 300nm, the implantation process is actually to inject metal Ni into the part with circuit pattern on the template to form the implantation-diffusion layer in Figure 3.

S140,注入后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层,最后将处理好的IC载板镶嵌在PCB电路板上。S140, after injection, the copper layer is plated on the surface of the injection layer by electroless copper plating and electroplating copper technology successively, and finally the processed IC carrier board is embedded on the PCB circuit board.

本步骤中,将注入完成后的样板先进行初步清洗以去除油污及其他杂质,可选地是,在无水乙醇或丙酮中对其超声波清洗,再将样板放入PtCl4溶液中,由于金属活度的强弱,注入的Ni会将Pt4+离子置换出来形成Pt单质,Pt单质对陶瓷表面有催化活化的作用,有利于化学镀铜的进一步进行,随后将样板放入化学镀的镀液中镀上一层薄铜层。然后在薄铜层上用电镀铜技术进行电镀,即形成图3中的铜层,其中可选地是,电镀铜层厚度为10~20um。镀完铜层之后去除余下的光刻胶,将装有芯片等元件的IC载板镶嵌在PCB电路板上,如图2所示。In this step, the template after the injection is initially cleaned to remove oil and other impurities. Optionally, it is ultrasonically cleaned in absolute ethanol or acetone, and then the template is put into the PtCl solution . The strength of the activity, the implanted Ni will replace Pt 4+ ions to form Pt element, Pt element has a catalytic activation effect on the ceramic surface, which is conducive to the further progress of electroless copper plating, and then put the sample into the electroless plating A thin layer of copper is plated in the solution. Then electroplating is performed on the thin copper layer by electroplating copper technology, that is, the copper layer shown in FIG. 3 is formed, wherein optionally, the thickness of the electroplated copper layer is 10-20 um. After the copper layer is plated, the remaining photoresist is removed, and the IC carrier board with chips and other components is embedded on the PCB circuit board, as shown in Figure 2.

Claims (10)

1.一种新型环保的IC载板制备方法,其特征在于:利用金属真空蒸汽离子源对系统级封装陶瓷基底进行表面金属化处理。1. A novel environment-friendly method for preparing an IC carrier plate, characterized in that: a metal vacuum vapor ion source is used to carry out surface metallization treatment to a system-level packaging ceramic substrate. 2.一种新型环保的IC载板制备方法,其特征在于,先得到电路图形再进行离子注入处理再加厚处理或先离子注入处理再加厚处理再得到图形。2. A novel environment-friendly method for preparing an IC carrier plate, characterized in that the circuit pattern is first obtained and then ion-implanted and then thickened or first ion-implanted and then thickened before obtaining the pattern. 3.根据权利要求2所述的方法,其特征在于,对基底清洗后在其表面进行离子注入,完成后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层;在铜层上涂覆一层正性光刻胶,再利用掩模版并经过曝光、显影等处理得到电路图形;然后用电解法处理样板上除电路图形以外的铜,最后将处理好的IC载板镶嵌在PCB电路板上。3. The method according to claim 2, characterized in that, ion implantation is carried out on the surface of the substrate after cleaning, and after completion, the copper layer is plated on the surface of the injection layer with electroless copper plating and electroplating copper technology; Coat a layer of positive photoresist on the surface, and then use the mask plate to obtain the circuit pattern through exposure, development, etc.; then use the electrolytic method to treat the copper on the sample plate except the circuit pattern, and finally inlay the processed IC carrier on the PCB circuit board. 4.根据权利要求2所述的方法,其特征在于,一种新型环保的IC载板制备方法,其特征在于:在基底上涂覆一层负性光刻胶,再利用掩模版并经过曝光、显影等处理在得到电路图形;将样板清洗后在其表面上进行离子注入;注入后,先后用化学镀铜和电镀铜技术在注入层表面镀得铜层,最后将处理好的IC载板镶嵌在PCB电路板上。4. The method according to claim 2, characterized in that, a novel environment-friendly IC carrier preparation method, characterized in that: a layer of negative photoresist is coated on the substrate, and then a mask plate is used and exposed , development and other treatments to obtain the circuit pattern; after cleaning the sample, ion implantation is performed on its surface; after implantation, a copper layer is plated on the surface of the implanted layer with electroless copper plating and electroplating copper technology, and finally the processed IC carrier board Embedded on the PCB circuit board. 5.根据权利要求1所述的方法,其特征在于,所述离子注入的注入元素为金属元素Ni,Cu,Fe,Au,Ti或Ag。5. The method according to claim 1, characterized in that, the implanted element of the ion implantation is a metal element Ni, Cu, Fe, Au, Ti or Ag. 6.根据权利要求书1所述方法,其特征在于离子注入处理的设备为连续宽束处理设备,处理直径为300~900mm,束流为10~50mA,处理能力为2m/min。6. The method according to claim 1, wherein the equipment for ion implantation treatment is a continuous wide-beam treatment equipment, with a treatment diameter of 300-900 mm, a beam current of 10-50 mA, and a treatment capacity of 2 m/min. 7.根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,其注入电压为0~50kV,注入剂量为1×1015~1×1017/cm27. The method according to claim 1, characterized in that ion implantation is performed on the surface of the ceramic substrate by using metal vacuum vapor ion source (MEVVA) ion implantation equipment, the implantation voltage is 0-50kV, and the implantation dose is 1×10 15 ~1×10 17 /cm 2 . 8.根据权利要求1所述的方法,其特征在于,采用金属真空蒸汽离子源(MEVVA)离子注入设备在陶瓷基底表面进行离子注入,注入深度为0~300nm。8 . The method according to claim 1 , characterized in that ion implantation is performed on the surface of the ceramic substrate by using Metal Vacuum Vapor Ion Source (MEVVA) ion implantation equipment, and the implantation depth is 0-300 nm. 9.根据权利要求2所述的方法,其特征在于,电镀铜所电镀的铜层的厚度为10~20um。9. The method according to claim 2, characterized in that the thickness of the copper layer electroplated by the copper electroplating is 10-20 um. 10.根据权利要求3所述的方法,其特征在于,过程中电解处理和电镀处理组成一个循环,以敷铜板为阳极,以经过注入和化学镀铜处理后的样板为阴极。10. The method according to claim 3, wherein the electrolytic treatment and the electroplating treatment form a cycle in the process, the copper clad plate is used as the anode, and the sample plate after injection and electroless copper plating is used as the cathode.
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CN114828430A (en) * 2022-05-10 2022-07-29 深圳市鼎华芯泰科技有限公司 Etching method of double-sided or multilayer printed circuit board

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CN104213121A (en) * 2014-08-15 2014-12-17 北京凯迪思电路板有限公司 Method for synchronously performing acidic etching and copper recovery for circuit board
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CN103209546A (en) * 2013-04-03 2013-07-17 遂宁市广天电子有限公司 Method for making line in direct negative etching way
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CN110923624A (en) * 2019-12-13 2020-03-27 北京师范大学 An ion beam printing method based on an ion beam printing system
CN110923624B (en) * 2019-12-13 2020-11-24 北京师范大学 An ion beam printing method based on an ion beam printing system
CN114828430A (en) * 2022-05-10 2022-07-29 深圳市鼎华芯泰科技有限公司 Etching method of double-sided or multilayer printed circuit board

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Application publication date: 20171013