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CN107204319A - Small-signal voltage stabilizing semiconductor devices - Google Patents

Small-signal voltage stabilizing semiconductor devices Download PDF

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Publication number
CN107204319A
CN107204319A CN201710372568.XA CN201710372568A CN107204319A CN 107204319 A CN107204319 A CN 107204319A CN 201710372568 A CN201710372568 A CN 201710372568A CN 107204319 A CN107204319 A CN 107204319A
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CN
China
Prior art keywords
lead bar
area
bending section
diode chip
backlight unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710372568.XA
Other languages
Chinese (zh)
Inventor
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201710372568.XA priority Critical patent/CN107204319A/en
Publication of CN107204319A publication Critical patent/CN107204319A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Rectifiers (AREA)

Abstract

A kind of small-signal voltage stabilizing semiconductor devices of the present invention, its the first lead bar one end is the Support being connected with diode chip for backlight unit, described diode chip for backlight unit one end is electrically connected by solder(ing) paste with the Support, the first lead bar other end is the first pin area, the first pin area of the first lead bar as the rectifier electric current transmission end;Second lead bar one end is weld zone, and the second lead bar other end is second pin area, the second pin area of the second lead bar as the rectifier electric current transmission end;Slab region, step sector and expanded letter area are followed successively by between the connection sheet two ends, the width in the expanded letter area is at least 3 times of the width of slab region;The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder(ing) paste.The present invention instead of the scheme of existing 0.4mm sizes and following chip by gold thread and elargol using specific connection sheet, be solved from technological design due to the problem of solder consumption is minimum, solder distribution stability is poor.

Description

Small-signal voltage stabilizing semiconductor devices
Technical field
The present invention relates to a kind of semiconductor devices, more particularly to a kind of voltage stabilizing semiconductor devices.
Background technology
Rectification/voltage-stabilizing device is widely used in the charger of household electrical appliances, office, Communication Equipment, the module such as power supply;Small-signal two Pole pipe product chips size is minimum, only 0.4mm or so, it is difficult to realize that connection sheet process lot is produced.Wire bond structure is typically used Gold thread and elargol, cost are higher, and routing technique process is complicated, inefficiency.Current small-signal diode product is usually to beat , there is low process efficiency in cable architecture, the drawback such as cost is higher.Because chip size is minimum, connection sheet structural manufacturing process difficulty is high, It is difficult to batch production.
When designing and developing connection sheet structural semiconductor product, in order to utilize chip area to greatest extent, generally even Contact pin is amplified to suitable with chip weld zone area with the connection spot size of chip.Thus the problem of bringing be, to connection sheet with The relative position precision of chip requires very high.Existing connection sheet position limiting structure is typically only capable to spacing in one direction, it is difficult to Reach technological requirement.Existing connection sheet structural semiconductor product is generally to connection sheet infinite place or using simple groove structure limit Position, its shortcoming is direction can only be done to connection sheet spacing, and spacing purpose is to avoid connecting in stove welding process is entered Contact pin off normal, which causes the tie point in connection sheet to deflect away from chip weld zone, causes product electrical property failure.
The content of the invention
It is an object of the present invention to provide a kind of small-signal voltage stabilizing semiconductor devices, the small-signal with voltage stabilizing semiconductor devices its The scheme of existing 0.4mm sizes and following chip by gold thread and elargol instead of using specific connection sheet, from technique Solved in design because solder consumption is minimum, poor and low precision the technical problem of solder distribution stability.
To reach above-mentioned purpose, the technical solution adopted by the present invention is:A kind of small-signal voltage stabilizing semiconductor devices, bag Include:First lead bar, the second lead bar, connection sheet and diode chip for backlight unit, the first lead bar one end are connected with diode chip for backlight unit The Support connect, described diode chip for backlight unit one end is electrically connected by solder(ing) paste with the Support, and the first lead article other end is One pin area, the first pin area of the first lead bar as the rectifier electric current transmission end;
Described second lead bar one end is weld zone, and the second lead bar other end is second pin area, the second lead bar Second pin area is as the electric current transmission end of the rectifier, and the size of the diode chip for backlight unit is 0.3 ~ 1mm;
Slab region, step sector and expanded letter area are followed successively by between the connection sheet two ends, the width in the expanded letter area is at least bar shaped 3 times of the width in area, the slab region end has the first downward bending section, and expanded letter area end has downward second Bending section;
The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder(ing) paste, positioned at second Electrically connected between second welding ends of bending section end and the weld zone of the second lead bar by solder(ing) paste, second bending section Length be more than the first bending section so that the first welding ends be higher than the second welding ends, the side of weld zone two is respectively provided with There is side block block, the weld zone end of this second lead bar is provided with terminal block block.
Further improved scheme is as follows in above-mentioned technical proposal:
1. in such scheme, the width in the expanded letter area is 5 ~ 8 times of the width of slab region.
2. in such scheme, first bending section and step sector angle are 90 ° ~ 110 °, second bending section and ladder Shape area angle is 90 ° ~ 110 °.
Because above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
Small-signal of the present invention voltage stabilizing semiconductor devices, its use specific connection sheet instead of existing 0.4mm sizes and with Under chip by the scheme of gold thread and elargol, solved from technological design because solder consumption is minimum, solder distribution is stable Property difference and low precision technical problem;Secondly, its connection sheet is connected with the second lead bar by specific structure, is realized to even Contact pin is spacing while do spacing to connection sheet corner in X, Y both direction, has reached high-precision spacing requirement, has realized maximum limit The utilization chip area of degree and the purpose of reduction chip cost, it is to avoid connection sheet off normal causes connection sheet in stove welding process is entered On tie point deflect away from chip weld zone and cause product electrical property failure, so as to substantially increase yield.
Brief description of the drawings
Accompanying drawing 1 is existing small-signal diode device structure schematic diagram;
Accompanying drawing 2 is the present invention looks up structural representation of accompanying drawing 2;
Accompanying drawing 3 is small-signal voltage stabilizing semiconductor device structure schematic diagram of the present invention;
Accompanying drawing 4 is the present invention looks up structural representation of accompanying drawing 3.
In the figures above:1st, the first lead bar;11st, the first pin area;12nd, Support;2nd, the second lead bar;21st, second Pin area;22nd, weld zone;3rd, connection sheet;31st, slab region;32nd, step sector;33rd, expanded letter area;4th, diode chip for backlight unit;5th, first is curved Pars convoluta;51st, the first welding ends;6th, the second bending section;61st, the second welding ends;7th, side block block;8th, terminal block block.
Embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Embodiment:A kind of small-signal voltage stabilizing semiconductor devices, including:First lead bar 1, the second lead bar 2, the and of connection sheet 3 Diode chip for backlight unit 4, the one end of the first lead bar 1 is the Support 12 being connected with diode chip for backlight unit 4, the diode chip for backlight unit 4 one End is electrically connected by solder(ing) paste with the Support 12, and the other end of the first lead bar 1 is the first pin area 11, the first lead bar 1 The first pin area 11 as the rectifier electric current transmission end;
Described one end of second lead bar 2 is weld zone 22, and the other end of the second lead bar 2 is second pin area 21, and this second draws The second pin area 21 of lines 2 is as the electric current transmission end of the rectifier, and the size of the diode chip for backlight unit 4 is 0.3 ~ 1mm;
Slab region 31, step sector 32 and expanded letter area 33 are followed successively by between the two ends of connection sheet 3, the width in the expanded letter area 33 is extremely It is 3 times of the width of slab region 31 less, the end of slab region 31 has the first downward bending section 5, the end of expanded letter area 33 End is with the second downward bending section 6;
The first welding ends 51 positioned at the end of the first bending section 5 is electrically connected with the other end of diode chip for backlight unit 4 by solder(ing) paste, is located at Electrically connected between second welding ends 61 of the end of the second bending section 6 and the weld zone 22 of the second lead bar 2 by solder(ing) paste, it is described The length of second bending section 6 is more than the first bending section 5, so that the first welding ends 51 is higher than the second welding ends 61, the weldering Connect 22 liang of area side and be provided with side block block 7, the end of weld zone 22 of this second lead bar 2 is provided with terminal block block 8.
The width in above-mentioned expanded letter area 33 is 6 times of the width of slab region 31.
Above-mentioned first bending section 5 and the angle of step sector 32 are 100 °, and second bending section 6 is with the angle of step sector 32 100°。
During using above-mentioned small-signal with voltage stabilizing semiconductor devices, it uses specific connection sheet to instead of existing 0.4mm chis Very little and following chip is solved because solder consumption is minimum, solder by the scheme of gold thread and elargol from technological design Distribute stability difference and the technical problem of low precision;Secondly, its connection sheet is connected with the second lead bar by specific structure, real Show spacing while do spacing to connection sheet corner in X, Y both direction to connection sheet, reached high-precision spacing requirement, it is real The purpose of chip area and reduction chip cost is now utilized to greatest extent, it is to avoid connection sheet off normal is made in stove welding process is entered Deflecting away from chip weld zone into the tie point in connection sheet causes product electrical property failure, so as to substantially increase yield.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all according to the present invention The equivalent change or modification that Spirit Essence is made, should all be included within the scope of the present invention.

Claims (1)

1. a kind of small-signal voltage stabilizing semiconductor devices, including:First lead bar(1), the second lead bar(2), connection sheet(3)With Diode chip for backlight unit(4), the first lead bar(1)One end is and diode chip for backlight unit(4)The Support of connection(12), the diode Chip(4)One end passes through solder(ing) paste and the Support(12)Electrical connection, the first lead bar(1)The other end is the first pin area (11), the first lead bar(1)The first pin area(11)It is used as the electric current transmission end of the rectifier;
The second lead bar(2)One end is weld zone(22), the second lead bar(2)The other end is second pin area(21), The second lead bar(2)Second pin area(21)It is used as the electric current transmission end of the rectifier, the diode chip for backlight unit(4)'s Size is 0.3 ~ 1mm;It is characterized in that:
The connection sheet(3)Slab region is followed successively by between two ends(31), step sector(32)With expanded letter area(33), the expanded letter area (33)Width be at least slab region(31)3 times of width, the slab region(31)End has the first downward bending section (5), the expanded letter area(33)End has the second downward bending section(6);
Positioned at the first bending section(5)First welding ends of end(51)With diode chip for backlight unit(4)The other end is electrically connected by solder(ing) paste Connect, positioned at the second bending section(6)Second welding ends of end(61)With the second lead bar(2)Weld zone(22)Between pass through weldering Tin cream is electrically connected, second bending section(6)Length be more than the first bending section(5), so that the first welding ends(51)It is high In the second welding ends(61), the weld zone(22)Two sides are provided with side block block(7), this second lead bar(2)Welding Area(22)End is provided with terminal block block(8);The expanded letter area(33)Width be slab region(31)5 ~ 8 times of width;It is described First bending section(5)With step sector(32)Angle is 100 °, second bending section(6)With step sector(32)Angle is 100 °.
CN201710372568.XA 2015-01-19 2015-01-19 Small-signal voltage stabilizing semiconductor devices Pending CN107204319A (en)

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CN104617156B (en) * 2015-01-19 2017-10-13 苏州固锝电子股份有限公司 Rectification chip for microelectronic component
CN109003947A (en) * 2018-07-23 2018-12-14 苏州锝耀电子有限公司 High-power stacked core chip architecture
CN109065516B (en) * 2018-07-23 2020-07-21 苏州锝耀电子有限公司 High-power chip packaging production method
CN109461711A (en) * 2018-10-30 2019-03-12 格力电器(合肥)有限公司 Optical coupler device and apparatus including the same

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CN107293530B (en) 2020-03-24

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