CN107171651A - Load the adjustable Microstrip equalizer of equilibrium quantity of PIN diode - Google Patents
Load the adjustable Microstrip equalizer of equilibrium quantity of PIN diode Download PDFInfo
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Abstract
Description
技术领域technical field
本发明属于均衡器控制技术领域，尤其涉及一种加载PIN二极管的均衡量可调微带均衡器。The invention belongs to the technical field of equalizer control, in particular to a microstrip equalizer with adjustable equalization amount loaded with PIN diodes.
背景技术Background technique
均衡器主要运用于现代雷达电子战中，它连接在大功率行波管输入或输出端，起增益均衡(幅度均衡器)或相位均衡(相位均衡器)的作用。关键是如何选择性吸收多余微波能量，同时不让能量反射回输入端口。电阻是均衡器中的能量吸收机制，主要影响均衡器曲线的衰减特性，吸波材料可用于腔体式均衡器的能量吸收，但其衰减量却难以准确控制，因而在工程实用中以固定电阻为主。电阻加工上的误差以及装配上的原因常常导致最终的均衡量比目标偏高或偏低，此外，MPM前级驱动模块输出功率往往随工作温度有较大变化，改变均衡器均衡量能在一定程度上改善这一温度特性，因此，实现均衡器衰减的二次调节将具有重要的使用价值。The equalizer is mainly used in modern radar electronic warfare. It is connected to the input or output of the high-power traveling wave tube and plays the role of gain equalization (amplitude equalizer) or phase equalization (phase equalizer). The key is how to selectively absorb excess microwave energy without reflecting energy back to the input port. Resistance is the energy absorption mechanism in the equalizer, which mainly affects the attenuation characteristics of the equalizer curve. The absorbing material can be used for the energy absorption of the cavity equalizer, but its attenuation is difficult to control accurately. Therefore, in engineering practice, fixed resistance is used as the host. Errors in resistor processing and assembly reasons often lead to the final equalization value being higher or lower than the target. In addition, the output power of the MPM pre-driver module often changes greatly with the operating temperature. To improve this temperature characteristic to a certain extent, therefore, it will be of great use value to realize the secondary adjustment of equalizer attenuation.
发明内容Contents of the invention
本发明的发明目的是：为了解决现有技术中存在的以上问题，本发明提出了一种加载PIN二极管的均衡量可调微带均衡器。The purpose of the present invention is: in order to solve the above problems in the prior art, the present invention proposes a microstrip equalizer with adjustable equalization amount loaded with PIN diodes.
本发明的技术方案是：一种加载PIN二极管的均衡量可调微带均衡器，包括从上至下依次层叠的第一金属层、介质基片和第二金属层；所述第一金属层包括沿直线设置的输入传输线、主传输线及输出传输线；所述主传输线一侧的两端位置分别设置有第一谐振单元和第二谐振单元，另一侧的中段位置设置有直流偏置电路；所述第一谐振单元和第二谐振单元具有相同结构，均包括与所述主传输线连接的PIN二极管及微带枝节；所述第一谐振单元的微带枝节一端与第一PIN二极管连接，另一端通过金属通孔接地；所述第二谐振单元的微带枝节一端与第二PIN二极管连接，另一端通过金属通孔接地；所述直流偏置电路包括第一焊盘和第二焊盘，所述第二焊盘接入正向偏置电压。The technical solution of the present invention is: a microstrip equalizer with adjustable equalization amount loaded with PIN diodes, comprising a first metal layer, a dielectric substrate and a second metal layer sequentially stacked from top to bottom; the first metal layer It includes an input transmission line, a main transmission line, and an output transmission line arranged along a straight line; a first resonant unit and a second resonant unit are respectively provided at both ends of one side of the main transmission line, and a DC bias circuit is provided at the middle of the other side; The first resonance unit and the second resonance unit have the same structure, and both include a PIN diode and a microstrip branch connected to the main transmission line; one end of the microstrip branch of the first resonance unit is connected to the first PIN diode, and the other One end is grounded through a metal through hole; one end of the microstrip stub of the second resonant unit is connected to the second PIN diode, and the other end is grounded through a metal through hole; the DC bias circuit includes a first pad and a second pad, The second pad is connected to a forward bias voltage.
进一步地，所述主传输线的另一侧的两端位置分别设置有输入匹配枝节和输出匹配枝节。Further, the two ends of the other side of the main transmission line are respectively provided with an input matching stub and an output matching stub.
进一步地，所述输入传输线与所述输入匹配枝节之间串联有第一隔直电容。Further, a first DC blocking capacitor is connected in series between the input transmission line and the input matching stub.
进一步地，所述输入传输线与所述输出匹配枝节之间串联有第二隔直电容。Further, a second DC blocking capacitor is connected in series between the input transmission line and the output matching stub.
进一步地，所述第一谐振单元和第二谐振单元的微带枝节均为折叠弯曲结构。Further, the microstrip branches of the first resonant unit and the second resonant unit are folded and bent structures.
进一步地，所述直流偏置电路的第一焊盘连接所述主传输线，所述第二焊盘通过扼流电感与所述第一焊盘连接。Further, the first pad of the DC bias circuit is connected to the main transmission line, and the second pad is connected to the first pad through a choke inductor.
本发明的有益效果是：本发明的加载PIN二极管的均衡量可调微带均衡器基于微带形式，利用PIN二极管的电阻随偏置电压的变化关系，通过PIN二极管改变吸收电阻，从而实现均衡器的均衡量可调，能在一定程度上改善均衡器的温度特性，同时兼顾了小型化和低驻波的要求，具有调谐电压低、调谐方便以及体积小的优点。The beneficial effects of the present invention are: the microstrip equalizer with adjustable equalization amount loaded with PIN diodes of the present invention is based on the microstrip form, uses the relationship between the resistance of the PIN diodes and the variation of the bias voltage, and changes the absorbing resistance through the PIN diodes, thereby realizing equalization The equalization amount of the equalizer is adjustable, which can improve the temperature characteristics of the equalizer to a certain extent, and at the same time take into account the requirements of miniaturization and low standing wave, and has the advantages of low tuning voltage, convenient tuning and small size.
附图说明Description of drawings
图1是本发明的加载PIN二极管的均衡量可调微带均衡器的横截面结构示意图。Fig. 1 is a cross-sectional schematic diagram of a microstrip equalizer with adjustable equalization amount loaded with PIN diodes according to the present invention.
图2是本发明的加载PIN二极管的均衡量可调微带均衡器的电路拓扑结构示意图。FIG. 2 is a schematic diagram of the circuit topology of the microstrip equalizer with adjustable equalization amount loaded with PIN diodes according to the present invention.
图3是本发明的加载PIN二极管的均衡量可调微带均衡器的第一金属层的电路结构示意图。FIG. 3 is a schematic diagram of the circuit structure of the first metal layer of the microstrip equalizer with adjustable equalization amount loaded with PIN diodes according to the present invention.
图4是本发明实施例中S21的测试结果示意图。Fig. 4 is a schematic diagram of the test results of S21 in the embodiment of the present invention.
图5是本发明实施例中S11的测试结果示意图。Fig. 5 is a schematic diagram of the test results of S11 in the embodiment of the present invention.
其中，1、输入传输线；2、第一隔直电容；3、输入匹配枝节；4、第一谐振单元；5、主传输线；6、直流偏置电路；7、第二谐振单元；8、输出匹配枝节；9、第二隔直电容；10、输出传输线；11、第一焊盘；12、扼流电感；13、第二焊盘；14、金属通孔；15、第一PIN二极管；16、第二PIN二极管；17、第一金属层；18、介质基片；19、第二金属层。Among them, 1. Input transmission line; 2. First DC blocking capacitor; 3. Input matching stub; 4. First resonant unit; 5. Main transmission line; 6. DC bias circuit; 7. Second resonant unit; 8. Output Matching branch; 9. Second DC blocking capacitor; 10. Output transmission line; 11. First pad; 12. Choke inductor; 13. Second pad; 14. Metal via; 15. First PIN diode; 16 , the second PIN diode; 17, the first metal layer; 18, the dielectric substrate; 19, the second metal layer.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
如图1所示为本发明的加载PIN二极管的均衡量可调微带均衡器的横截面结构示意图。一种加载PIN二极管的均衡量可调微带均衡器，包括从上至下依次层叠的第一金属层17、介质基片18和第二金属层19；为了形成本发明的可调均衡器，通过印刷电路板制造工艺对第一金属层17进行加工形成所需的金属图案，第二金属层19为未做加工的完整的金层。FIG. 1 is a schematic diagram of a cross-sectional structure of a microstrip equalizer with adjustable equalization amount loaded with PIN diodes according to the present invention. A microstrip equalizer with adjustable equalization amount loaded with PIN diodes, comprising a first metal layer 17, a dielectric substrate 18 and a second metal layer 19 stacked sequentially from top to bottom; in order to form the adjustable equalizer of the present invention, The first metal layer 17 is processed to form a required metal pattern through the printed circuit board manufacturing process, and the second metal layer 19 is a complete gold layer without processing.
如图2所示，为本发明的加载PIN二极管的均衡量可调微带均衡器的电路拓扑结构示意图。本发明的第一金属层17包括沿长边直线设置的输入传输线1、主传输线5及输出传输线10；主传输线5一侧的两端位置分别设置有第一谐振单元4和第二谐振单元7，另一侧的中段位置设置有直流偏置电路6；主传输线5的另一侧的两端位置还分别设置有输入匹配枝节3和输出匹配枝节8，用于调节端口驻波；输入传输线1与输入匹配枝节3之间串联有第一隔直电容2，输出传输线10与输出匹配枝节8之间串联有第二隔直电容9实现隔直。As shown in FIG. 2 , it is a schematic diagram of the circuit topology of the microstrip equalizer with adjustable equalization amount loaded with PIN diodes of the present invention. The first metal layer 17 of the present invention includes the input transmission line 1, the main transmission line 5 and the output transmission line 10 arranged along the long side straight line; the two ends of the main transmission line 5 are respectively provided with the first resonant unit 4 and the second resonant unit 7 , the middle position on the other side is provided with a DC bias circuit 6; the two ends of the other side of the main transmission line 5 are also respectively provided with an input matching branch 3 and an output matching branch 8, which are used to adjust the port standing wave; the input transmission line 1 A first DC blocking capacitor 2 is connected in series with the input matching stub 3 , and a second DC blocking capacitor 9 is connected in series between the output transmission line 10 and the output matching stub 8 to realize DC blocking.
本发明的第一谐振单元4和第二谐振单元7具有相同结构，均包括与主传输线连接的PIN二极管及微带枝节；第一谐振单元4的微带枝节一端与第一PIN二极15管连接，另一端通过金属通孔14接地；第二谐振单元7的微带枝节一端与第二PIN二极管16连接，另一端通过金属通孔14接地；金属通孔14同时作为谐振结构中的射频通路接地和直流电路的地；为减小谐振单元的长度，第一谐振单元4和第二谐振单元7的微带枝节均为折叠弯曲结构。The first resonant unit 4 and the second resonant unit 7 of the present invention have the same structure, and all include a PIN diode and a microstrip branch connected to the main transmission line; one end of the microstrip branch of the first resonant unit 4 is connected to the first PIN diode 15 connected, the other end is grounded through the metal through hole 14; one end of the microstrip stub of the second resonant unit 7 is connected to the second PIN diode 16, and the other end is grounded through the metal through hole 14; the metal through hole 14 is also used as a radio frequency path in the resonant structure Grounding and the ground of the DC circuit; in order to reduce the length of the resonant unit, the microstrip branches of the first resonant unit 4 and the second resonant unit 7 are folded and bent structures.
本发明的直流偏置电路6包括第一焊盘11和第二焊盘13，第二焊盘13接入正向偏置电压。直流偏置电路6的第一焊盘11连接主传输线5，第二焊盘13通过扼流电感12与第一焊盘11连接进行微波信号隔离。The DC bias circuit 6 of the present invention includes a first pad 11 and a second pad 13, and the second pad 13 is connected to a forward bias voltage. The first pad 11 of the DC bias circuit 6 is connected to the main transmission line 5 , and the second pad 13 is connected to the first pad 11 through a choke inductor 12 for microwave signal isolation.
如图3所示，为本发明的加载PIN二极管的均衡量可调微带均衡器的第一金属层的电路结构示意图。本发明的整个结构传输线采用微带线，介质基片18使用厚度为0.635mm，介电常数为6.15的Taconic RF-60(tm)基片，输入传输线1和输出传输线10的线宽w0＝0.95mm；主传输线5的线宽ws＝0.6mm，长度ls＝6.2mm；输入匹配枝节3和输出匹配枝节8的尺寸相同，dx＝1mm，dy＝0.8mm，d1＝0.5mm，d2＝0.4mm；第一谐振单元4和第二谐振单元7的尺寸相同，pad_w＝0.8mm，pad_l＝0.8mm，w＝0.25mm，l1＝0.8mm，l2＝2.5mm，l3＝l5＝l7＝0.7mm，l4＝l6＝l8＝3.5mm，l9＝1.2mm，l10＝2.5mm，a＝b＝1mm；金属通孔14的直径d0＝0.5mm。第一隔直电容2和第二隔直电容9采用0402封装的100pF电容，扼流电感12选用LQW18AN13NJ00，电感值为13nH。第一PIN二极管15和第二PIN二极管16采用SKYWORKS公司的低电容二极管SMP1302-040LF，对应的偏置电压约为600～650mV。整个电路大小为15mm×24mm。As shown in FIG. 3 , it is a schematic diagram of the circuit structure of the first metal layer of the microstrip equalizer with adjustable equalization amount loaded with PIN diodes of the present invention. Whole structural transmission line of the present invention adopts microstrip line, and dielectric substrate 18 uses thickness is 0.635mm, and dielectric constant is the Taconic RF-60 (tm) substrate of 6.15, and the line width w0=0.95 of input transmission line 1 and output transmission line 10 mm; the line width ws=0.6mm of the main transmission line 5, the length ls=6.2mm; the size of the input matching stub 3 and the output matching stub 8 are the same, dx=1mm, dy=0.8mm, d1=0.5mm, d2=0.4mm The size of the first resonance unit 4 and the second resonance unit 7 is the same, pad_w=0.8mm, pad_l=0.8mm, w=0.25mm, l1=0.8mm, l2=2.5mm, l3=l5=l7=0.7mm, l4=l6=l8=3.5mm, l9=1.2mm, l10=2.5mm, a=b=1mm; the diameter d0 of the metal through hole 14=0.5mm. The first DC blocking capacitor 2 and the second DC blocking capacitor 9 are 100pF capacitors packaged in 0402, and the choke inductor 12 is LQW18AN13NJ00 with an inductance value of 13nH. The first PIN diode 15 and the second PIN diode 16 are low-capacitance diodes SMP1302-040LF from SKYWORKS, and the corresponding bias voltage is about 600-650 mV. The size of the whole circuit is 15mm×24mm.
如图4所示，为本发明实施例中S21的测试结果示意图，如图5所示，为本发明实施例中S11的测试结果示意图。本发明的加载PIN二极管的均衡量可调微带均衡器工作于2～6GHz，对应的曲线最大衰减值从5.8dB增加到11.4dB，S11除了偏置电压0.65V时中间个别点略高于-10dB，其余均在-10dB以下。As shown in FIG. 4 , it is a schematic diagram of the test result of S21 in the embodiment of the present invention, and as shown in FIG. 5 , it is a schematic diagram of the test result of S11 in the embodiment of the present invention. The microstrip equalizer with adjustable equalization amount loaded with PIN diodes of the present invention works at 2-6GHz, and the maximum attenuation value of the corresponding curve increases from 5.8dB to 11.4dB, and the middle point of S11 is slightly higher than - 10dB, the rest are below -10dB.
本发明的加载PIN二极管的均衡量可调微带均衡器的工作原理为：The operating principle of the microstrip equalizer with adjustable equalization amount loaded with PIN diodes of the present invention is:
微波信号从输入传输线1馈入，经输入匹配枝节3进行阻抗匹配后在主传输线5上传输；主传输线5上连接两个谐振单元(第一谐振单元4、第二谐振单元7)，信号在第一谐振单元4和第二谐振单元7上发生谐振，表现带阻特性，其中的第一PIN二极管15和第二PIN二极管16主要表现为电阻特性，用于吸收微波能量；微波信号由输出匹配枝节8进行阻抗匹配后，经输出传输线10输出；第一隔直电容2和第二隔直电容9的作用是隔直流通交流，扼流电感12的作用是通直流隔交流；通过第二焊盘13给第一PIN二极管15和第二PIN二极管16加正偏压，调节其偏置电压即可得到不同的电阻值，达到调节衰减量的效果。The microwave signal is fed from the input transmission line 1, and then transmitted on the main transmission line 5 after impedance matching by the input matching branch 3; two resonant units (the first resonant unit 4 and the second resonant unit 7) are connected to the main transmission line 5, and the signal is in Resonance occurs on the first resonant unit 4 and the second resonant unit 7, showing band-stop characteristics, wherein the first PIN diode 15 and the second PIN diode 16 mainly show resistance characteristics, and are used to absorb microwave energy; the microwave signal is matched by the output After the impedance matching of the branch 8, it is output through the output transmission line 10; the function of the first DC blocking capacitor 2 and the second DC blocking capacitor 9 is to block DC and communicate with AC, and the function of the choke inductor 12 is to communicate with DC and isolate AC; The plate 13 applies forward bias voltage to the first PIN diode 15 and the second PIN diode 16, and different resistance values can be obtained by adjusting the bias voltage, so as to achieve the effect of adjusting the attenuation.
本领域的普通技术人员将会意识到，这里所述的实施例是为了帮助读者理解本发明的原理，应被理解为本发明的保护范围并不局限于这样的特别陈述和实施例。本领域的普通技术人员可以根据本发明公开的这些技术启示做出各种不脱离本发明实质的其它各种具体变形和组合，这些变形和组合仍然在本发明的保护范围内。Those skilled in the art will appreciate that the embodiments described here are to help readers understand the principles of the present invention, and it should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical revelations disclosed in the present invention without departing from the essence of the present invention, and these modifications and combinations are still within the protection scope of the present invention.
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| CN109617618A (en) * | 2019-01-31 | 2019-04-12 | 北京无线电测量研究所 | A kind of broadband photoelectric conversion circuit |
| CN110277617A (en) * | 2019-07-02 | 2019-09-24 | 电子科技大学 | Broadband miniaturized equalizer based on unequal hybrid bridge structure |
| CN110784187A (en) * | 2019-11-26 | 2020-02-11 | 中国电子科技集团公司第五十四研究所 | An Adjustable Amplitude Equalizer Based on SIR Structure |
| CN111697994A (en) * | 2020-06-24 | 2020-09-22 | 天津中科海高微波技术有限公司 | Novel adjustable amplitude equalizer |
| CN112002975A (en) * | 2020-08-27 | 2020-11-27 | 电子科技大学 | Miniaturized equalizer based on double-helix resonator and defected ground structure |
| CN113014202A (en) * | 2021-03-25 | 2021-06-22 | 中国电子科技集团公司第五十四研究所 | Adjustable amplitude equalizer based on variable capacitance diode and PIN diode |
| CN114374065A (en) * | 2022-01-11 | 2022-04-19 | 陕西烽火诺信科技有限公司 | X, Ku wave band multi-branch equalizer loaded by medium |
| CN118693496A (en) * | 2024-07-30 | 2024-09-24 | 无锡思恩电子科技有限公司 | A miniaturized adjustable microstrip gain equalizer |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185573A (en) * | 2011-03-11 | 2011-09-14 | 京信通信系统（中国）有限公司 | Circuit of electric-tuning gain equalizer |
| CN202696648U (en) * | 2012-07-13 | 2013-01-23 | 四川九洲电器集团有限责任公司 | Adjustable millimeter wave power equalizer |
| CN105140086A (en) * | 2015-09-10 | 2015-12-09 | 电子科技大学 | Miniature power gain balancer based on dual-mode resonator |
| CN105655674A (en) * | 2016-03-24 | 2016-06-08 | 成都九洲迪飞科技有限责任公司 | Zero point adjustable microstrip filter |
| CN205335217U (en) * | 2016-01-11 | 2016-06-22 | 中国电子科技集团公司第十研究所 | Compact microstrip gainequalizer |
| CN106252181A (en) * | 2016-08-29 | 2016-12-21 | 电子科技大学 | Miniaturization equalizer based on LCP technology |
| CN106356606A (en) * | 2016-08-30 | 2017-01-25 | 电子科技大学 | Miniaturized phase shifting equalizer based on Wilkinson power divider |
-
2017
- 2017-06-23 CN CN201710485021.0A patent/CN107171651B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185573A (en) * | 2011-03-11 | 2011-09-14 | 京信通信系统（中国）有限公司 | Circuit of electric-tuning gain equalizer |
| CN202696648U (en) * | 2012-07-13 | 2013-01-23 | 四川九洲电器集团有限责任公司 | Adjustable millimeter wave power equalizer |
| CN105140086A (en) * | 2015-09-10 | 2015-12-09 | 电子科技大学 | Miniature power gain balancer based on dual-mode resonator |
| CN205335217U (en) * | 2016-01-11 | 2016-06-22 | 中国电子科技集团公司第十研究所 | Compact microstrip gainequalizer |
| CN105655674A (en) * | 2016-03-24 | 2016-06-08 | 成都九洲迪飞科技有限责任公司 | Zero point adjustable microstrip filter |
| CN106252181A (en) * | 2016-08-29 | 2016-12-21 | 电子科技大学 | Miniaturization equalizer based on LCP technology |
| CN106356606A (en) * | 2016-08-30 | 2017-01-25 | 电子科技大学 | Miniaturized phase shifting equalizer based on Wilkinson power divider |
Non-Patent Citations (2)
| Title |
|---|
| Q.Y. YANG ET AL: "Miniaturized microstrip equalizer based on SCRLH ZOR", 《2014 IEEE INTERNATIONAL CONFERENCE ON COMMUNICTION PROBLEM-SOLVING》 * |
| 周太富: "微波与毫米波增益均衡及放大技术研究", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108040024A (en) * | 2017-12-04 | 2018-05-15 | 中国电子科技集团公司第四十研究所 | A kind of ultra wide band electrically adjustable equalizer based on CSRR structures |
| CN109617618A (en) * | 2019-01-31 | 2019-04-12 | 北京无线电测量研究所 | A kind of broadband photoelectric conversion circuit |
| CN110277617A (en) * | 2019-07-02 | 2019-09-24 | 电子科技大学 | Broadband miniaturized equalizer based on unequal hybrid bridge structure |
| CN110277617B (en) * | 2019-07-02 | 2021-01-26 | 电子科技大学 | Broadband miniaturized equalizer based on unequal hybrid bridge structure |
| CN110784187A (en) * | 2019-11-26 | 2020-02-11 | 中国电子科技集团公司第五十四研究所 | An Adjustable Amplitude Equalizer Based on SIR Structure |
| CN111697994A (en) * | 2020-06-24 | 2020-09-22 | 天津中科海高微波技术有限公司 | Novel adjustable amplitude equalizer |
| CN111697994B (en) * | 2020-06-24 | 2021-07-09 | 天津中科海高微波技术有限公司 | Novel adjustable amplitude equalizer |
| CN112002975A (en) * | 2020-08-27 | 2020-11-27 | 电子科技大学 | Miniaturized equalizer based on double-helix resonator and defected ground structure |
| CN112002975B (en) * | 2020-08-27 | 2021-09-24 | 电子科技大学 | Miniaturized Equalizer Based on Double Helix Resonator and Defective Ground Structure |
| CN113014202A (en) * | 2021-03-25 | 2021-06-22 | 中国电子科技集团公司第五十四研究所 | Adjustable amplitude equalizer based on variable capacitance diode and PIN diode |
| CN114374065A (en) * | 2022-01-11 | 2022-04-19 | 陕西烽火诺信科技有限公司 | X, Ku wave band multi-branch equalizer loaded by medium |
| CN118693496A (en) * | 2024-07-30 | 2024-09-24 | 无锡思恩电子科技有限公司 | A miniaturized adjustable microstrip gain equalizer |
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