CN107153384A - Active MEMS inertia switches - Google Patents
Active MEMS inertia switches Download PDFInfo
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- CN107153384A CN107153384A CN201710513804.5A CN201710513804A CN107153384A CN 107153384 A CN107153384 A CN 107153384A CN 201710513804 A CN201710513804 A CN 201710513804A CN 107153384 A CN107153384 A CN 107153384A
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- microcontroller
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- 238000005516 engineering process Methods 0.000 claims description 7
- 238000013500 data storage Methods 0.000 claims description 4
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- 238000007789 sealing Methods 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
- G05B19/0423—Input/output
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/25—Pc structure of the system
- G05B2219/25257—Microcontroller
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Electronic Switches (AREA)
Abstract
The invention provides a kind of active MEMS inertia switches, including voltage regulation unit, microcontroller, accelerometer, memory cell and electronic switch, the voltage regulation unit is connected as equipment with external power source and provides burning voltage;The accelerometer is used to pass to microcontroller after the acceleration information of actual acquisition is carried out into sample variance;The microcontroller is used for the actual acceleration data Cun Chudao memory cell for gathering the accelerometer, is compared with default acceleration rate threshold, judges whether impact occurs and send corresponding control signal to electronic switch according to result of determination;The memory cell is used for the actual acceleration data for recording the accelerometer collection;The control signal that the electronic switch is used to be sent according to microcontroller is realized to being controlled by the turn-on and turn-off of control circuit.The present invention can be realized to by the intelligent control of control circuit by above-mentioned means, moreover it is possible to which the acceleration information that accelerometer is gathered is recorded and analyzed.
Description
Technical field
Opened the present invention relates to the inertia under the application scenarios such as military missile-borne fuse, SMART AMMUNITION, Aero-Space, automotive electronics
Technical field is closed, especially, is related to a kind of active MEMS inertia switches.
Background technology
Inertia switch be it is a kind of being capable of device sensitive to acceleration change and producing switch closed action, also referred to as threshold
Value switch, acceleration switch or g values switch, are widely used in military missile-borne fuse, SMART AMMUNITION, Aero-Space, automobile electricity
The multiple fields such as son.Conventional inertia switch is all mechanical, with cost is low, strong antijamming capability the features such as, but due to adopting
With mass and spring structure, volume is often larger, due to processing and assembling factor, and acceleration rate threshold distribution is big, exists
Closure is possible by mistake, and reliability and security be not high.
MEMS (MEMS, Micro-Electro Mechanical System) be it is a kind of by body silicon etching, it is big
The technologies such as scale integrated circuit, electronics and mechanical devices are integrated together, and are formed and are included information sensing, data processing, execution
The integrated system of mechanism and other micro elements, with miniaturization, integrated, multi-crossed disciplines, can manufacture the features such as.It is existing
The mechanical switch produced by MEMS technology, its typical feature is, without externally fed, state to be off during normality, during work
The conducting of signal is realized by the inertial collision contact of internal mechanical structure.
Either tradition machinery inertia switch is also based on the passive of MEMS technology to the structures shape of existing inertia switch
Inertia switch, belongs to passive inertia switch category, it is impossible to which the inertial acceleration before and after impact is recorded and analyzed.
The content of the invention
The invention provides a kind of active MEMS inertia switches, for solve existing inertia switch can not be to impact before and after
The problem of inertial acceleration is recorded and analyzed.
A kind of active MEMS inertia switches that the present invention is provided, including voltage regulation unit, microcontroller, accelerometer, storage
Unit and electronic switch, wherein:The voltage regulation unit is connected with external power source, into the microcontroller after external power source is changed
Device, accelerometer and memory cell provide burning voltage;The accelerometer is used to perceive environmental information, will actually adopt
The acceleration information of collection passes to microcontroller after carrying out sample variance;The microcontroller is used to gather the accelerometer
Actual acceleration data Cun Chudao memory cell, and the actual acceleration data and default acceleration rate threshold are carried out
Compare, judge whether impact occurs and send corresponding control signal to electronic switch according to result of determination;The memory cell
Actual acceleration data for recording the accelerometer collection;The electronic switch is used for the control sent according to microcontroller
Signal processed is realized to being controlled by the turn-on and turn-off of control circuit.
Further, the voltage regulation unit is provided with one-way guide flow circuit and internal energy storage device, the voltage regulation unit
Power output end is connected by one-way guide flow circuit with the power end of microcontroller, accelerometer and memory cell;The inside
Power end of the power end of energy storage device respectively with microcontroller, accelerometer and memory cell is connected, when generation ultra-high g penetration
Impact causes the fracture of external power source line to be, is that microcontroller, accelerometer and memory cell are carried by the internal energy storage device
For temporary source.
Further, the one-way guide flow circuit includes the first diode and the second diode, the internal energy storage device
Including the first electric capacity and the second electric capacity, wherein:The power output end of the voltage regulation unit passes through the first diode and microcontroller
Connected with the power end of accelerometer, the first electric capacity one end ground connection, the power end of other end connection microcontroller and acceleration
Spend the power end of meter;The power output end of the voltage regulation unit is connected by the second diode and the power end of memory cell, institute
State the power end that second electric capacity one end ground connection, the other end connect memory cell in succession.
Further, a digital IO port of the microcontroller is connected to the electricity of voltage regulation unit by a resistance
Source output terminal, the connection status to detect external power source;When external power source is connected, the microcontroller is by the acceleration
Count the actual acceleration data Cun Chudao memory cell of collection;When external power source disconnects, the microcontroller accelerates described
The actual acceleration data storage of degree meter collection is in microcontroller memory chip in itself.
Further, the active MEMS inertia switches also include threshold setting unit, for receiving and preserving user defeated
The acceleration rate threshold entered.
Further, the range of the accelerometer is more than 100g, response frequency and is more than 1KHz.
Further, described three orthogonal sensitive axes of accelerometer disposition, can be perceived any in three dimensions
The inertia force in direction.
Further, the traffic rate of the microcontroller is more than 2Mbps;And/or, the microcontroller is provided with inside
Clock source.
Further, the active MEMS inertia switches use double-shell structure, wherein, it is provided between inner casing and shell
Padded coaming, and integrally filled voltage regulation unit, microcontroller, accelerometer, memory cell and electronic switch using dosing technology
It is enclosed in inner casing.
Further, the voltage regulation unit, microcontroller, accelerometer, memory cell and electronic switch are integrated in an electricity
On the plate of road, with fluid sealant to integrated voltage regulation unit, microcontroller, accelerometer, memory cell and electronic cutting on circuit boards
Put row sealing into smear, inner casing is put into afterwards, overall embedding is carried out using Embedding Material;Inner casing is fitted into shell, inner casing and outer
Bottom gap addition padded coaming, the peripheral clearance addition packing material of shell.
Compared with prior art, the active inertia switch provided in an embodiment of the present invention based on MEMS, include by
Microcontroller, accelerometer and memory cell that voltage regulation unit is powered, the acceleration information that microcontroller is gathered to accelerometer
It is compared with default acceleration rate threshold to judge whether to hit, and corresponding control signal is sent to electronic switch,
It can not only realize to by the intelligent control of control circuit, additionally it is possible to which the acceleration information for perceiving and gathering to accelerometer is being deposited
Storage unit is recorded, and is improved to carry out subsequent data analysis and system.
Brief description of the drawings
Accompanying drawing is only used for showing the purpose of preferred embodiment, and is not considered as limitation of the present invention.And whole
In individual accompanying drawing, identical part is denoted by the same reference numerals.Wherein:
Fig. 1 is the structural representation of the active embodiment of MEMS inertia switches one of the invention;
Fig. 2 constitutes structural representation for the voltage regulation unit of the active specific embodiment of MEMS inertia switches one of the invention;
Fig. 3 is the product encapsulating structure schematic diagram of the active specific embodiment of MEMS inertia switches one of the invention;
In figure, 1 row's of expression pin, 2 expression caps, 3 expression studs, 4 expression shells, 5 indication circuit control modules, 6 represent
Embedding Material, 7 represent inner casing, and 8 represent packing material, and 9 represent padded coaming.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
In the description of the invention, it is to be understood that term " first ", " second " are only used for describing purpose, and can not
It is interpreted as indicating or implies relative importance or the implicit quantity for indicating indicated technical characteristic.Thus, define " the
One ", one or more this feature can be expressed or be implicitly included to the feature of " second "." multiple " are meant that two
Or two or more, unless otherwise specifically defined.Term " comprising ", "comprising" and similar terms are understood to out
The term of putting property, i.e., " including/including but not limited to ".Term "based" is " being based at least partially on ".Term " embodiment "
Represent " at least one embodiment ";Term " another embodiment " expression " at least one further embodiment ".The phase of other terms
Close during definition will be described below and provide.
The active MEMS inertia switches that one embodiment of the invention is provided, are that a kind of active inertia based on MEMS is opened
Close, as shown in figure 1, including voltage regulation unit, microcontroller, accelerometer, memory cell and electronic switch, wherein:
Voltage regulation unit is connected with external power source, into voltage regulation unit, microcontroller, accelerometer and memory cell etc. after changing
Electronic component provides burning voltage.
Accelerometer can be perceived to environmental information, for being acquired to actual acceleration information, sample variance
After pass to microcontroller.
Microcontroller is used for the actual acceleration data Cun Chudao memory cell that gathers the accelerometer, and by institute
Actual acceleration data are stated to be compared with default acceleration rate threshold, judge impact whether occur and according to result of determination to
Electronic switch sends corresponding control signal.
The memory cell is used for the actual acceleration data for recording the accelerometer collection, to carry out follow-up number
According to reading and analysis.
The control signal that the electronic switch is used to being sent according to microcontroller realize to by A in control circuit and B points it
Between turn-on and turn-off control.
In the specific implementation, microcontroller can be electrically connected by serial ports with accelerometer, and microcontroller preferred disposition is fast
Fast serial ports (such as traffic rate is more than 2Mbps), to realize that the actual acceleration data obtained are gathered to the accelerometer to be carried out
Effectively read and store;In addition, microcontroller is needed with quick calculation processing power, with realize quick logical process and
Effective identification of signal.As shown in figure 1, microcontroller can also be communicated with external equipment (such as host computer), to realize life
The reception of order and the reading of stored data.Memory cell needs larger storage capacity (can such as be more than 8Mb), to ensure to one
The record of the acceleration information gathered in the range of fixing time.The electronic switch need to have the short response time, with quick real
Existing circuit turn-on.
In another embodiment, for prevent when impact occur when caused external power source wiring fracture be unable to normal power supply
Problem, voltage regulation unit can also set internal energy storage device to provide temporary source for system, be adopted with completing corresponding follow-up data
Collection, data processing and data storage action, power output end that can be in the voltage regulation unit to prevent backward flow problem and inside
One-way guide flow circuit is set between energy storage device.When it is implemented, can be therein unidirectional using the structure type shown in Fig. 2
Guiding circuit includes the first diode D1 and the second diode D2, and internal energy storage device includes the first electric capacity C1 and the second electric capacity
C2, specific connected mode is:The power output end VCC's of voltage regulation unit passes through the first diode D1 and microcontroller power supply all the way
The power end VCC3 connections of VCC1 and accelerometer are held, first electric capacity C1 one end ground connection, the other end connect the power supply of microcontroller
Hold the power end VCC3 of VCC1 and accelerometer;The power output end VCC of the voltage regulation unit another road passes through the two or two pole
Pipe D2 and memory cell power end VCC2 connections, the second electric capacity C2 one end ground connection, the other end connect memory cell in succession
Power end VCC2.Under normal circumstances, system is powered by external power source, and now the first electric capacity C1, the second electric capacity C2 carry out charging storage
Energy;When ultra-high g penetration, which impacts, to be occurred, if external power source wiring is broken, the first electric capacity C1 electric discharges are the microcontroller
Power supply is provided with accelerometer, to complete the subsequent treatment of data and storage after impact occurs;Second electric capacity C2 electric discharges are storage
Unit provides power supply, memory cell power down during preventing that data from writing and causes data corruption.First diode D1 and the two or two
Pole pipe D2 control electric current one-way flows, to ensure to be consumed by external equipment during the first electric capacity C1 and the second electric capacity C2 electric discharges,
Improve effectively using for internal energy storage device energy.
Further to improve the reliability of data storage, present invention also offers a kind of pair of memory mechanism, Fig. 2 can be used
Shown circuit structure, the difference with above-described embodiment is, in digital IO pin DIO and the voltage stabilizing list of microprocessor
A resistance R1 is also connected between the power output end VCC of member, concrete operating principle is:Accelerometer is received in microcontroller to adopt
During the acceleration information of collection, the state of external power source is read by digital IO pin DIO first, if external power source is normal
Above-mentioned acceleration information is then stored in memory cell;Above-mentioned acceleration information is stored on microcontroller if external power source is abnormal
Internal memory in.Now, the first diode D1 and the second diode D2 can also be further ensured that the microcontroller numeral input
Output pin DIO can effectively read the wiring state of external power source.
Further, in order to recognize the inertia force of three dimensions any direction, realize to three dimensions any direction
Effective identification of impact, accelerometer can configure three mutually perpendicular sensitive axes.Specifically, having inside accelerometer micro-
Mechanical structure, the information of collection carries out Analog-digital Converter by the accelerometer internal circuit, finally with data signal
Form passes to microcontroller by serial line interface.Within a sampling period of accelerometer, the microcontroller is to receiving
Acceleration information stored, and according to inner setting logic decision impact whether occur and to the electronic switch send
Corresponding control signal.
Because there is the accelerometer in the characteristics of g values overload is big, the pulse duration is short, the present invention program to need for impact
Possesses larger impact resistance (can such as be more than 10000g), so that ensure being capable of reliably working when being impacted;In addition, plus
Speedometer has also needed faster response frequency (can such as be more than 1KHz), to ensure effectively read when shock pulse occurs
Take;Identification impact is only needed in the present invention program, does not require to liquidate and hits whole accurate measurement, the accelerometer can select compared with
The product of wide range (such as larger than 100g), effectively to recognize high g value impact and conventional vibration.
The probability failed further to improve the impact resistance of product, stress destruction during reduction impact generation, this
Duplex shell structure can be used by inventing active MEMS inertia switches, which includes voltage regulation unit, microcontroller, accelerometer, be deposited
The circuit control module of storage unit and electronic switch is placed in inner casing, and overall embedding is carried out according to dosing technology by potting compound,
Padded coaming is added between inside and outside shell, to apparatus with shock absorbing, the stress wave acted on inertia switch, padded coaming is reduced
It can also increase the shock pulse time while impact amplitude is reduced, be more beneficial for effectively recognizing impact.
Fig. 3 is the duplex shell structure schematic diagram of an active MEMS inertia switches of the invention, when it is implemented, circuit control module
5 can be integrated on a circuit board, with fluid sealant (such as 502 glue) to carrying out sealing smearing, prevent during impact stress crosses ambassador big
The thin device of area causes to damage.Inner casing 7 is put into afterwards, overall embedding is carried out using Embedding Material 6, and appropriate heating is used during embedding
Bubble is handled, the bubble prevented causes embedding intensity decreases.Inner casing 7 is fitted into shell 4, and the addition of inside and outside shell bottom gap is slow
Material 9 is rushed, inside and outside shell peripheral clearance addition packing material 8 (such as heat conductive silica gel) passes to apparatus with shock absorbing, reduction and is
The stress wave size of system.The upper port of inside and outside shell is closed using cap 2, and cap 2 is fixedly connected with shell 4 by stud 3, arranges pin
1 exposes outside housing through cap 2.Circuit control module 5 is connected and and external equipment by arranging the realization of pin 1 with external power source
(such as host computer) is communicatively coupled, and inside is without independent cabling, it is to avoid because the dislocation that impact is produced causes wire fracture.Arrange pin 1
Main by shell and embedding guarantee through overall construction intensity, duplex shell structure can make after shell gross distortion, be in inner casing
System remains to repetition recovery and used.
Each embodiment in this specification is described by the way of progressive, what each embodiment was stressed be with
Between the difference of other embodiment, each embodiment identical similar part mutually referring to.It is described above, it is only this
Invention preferably embodiment, but protection scope of the present invention is not limited thereto, and any those skilled in the art exist
Disclosed herein technical scope in, the change or replacement that can be readily occurred in, should all cover protection scope of the present invention it
It is interior.
Claims (10)
1. a kind of active MEMS inertia switches, it is characterised in that including voltage regulation unit, microcontroller, accelerometer, memory cell
And electronic switch, wherein:
The voltage regulation unit is connected with external power source, into the microcontroller, accelerometer and storage after external power source is changed
Unit provides burning voltage;
The accelerometer is used to perceive environmental information, and the acceleration information of actual acquisition is carried out to pass after sample variance
Pass microcontroller;
The microcontroller is used for the actual acceleration data Cun Chudao memory cell that gathers the accelerometer, and by institute
Actual acceleration data are stated to be compared with default acceleration rate threshold, judge impact whether occur and according to result of determination to
Electronic switch sends corresponding control signal;
The memory cell is used for the actual acceleration data for recording the accelerometer collection;
The control signal that the electronic switch is used to be sent according to microcontroller is realized to by the turn-on and turn-off control of control circuit
System.
2. active MEMS inertia switches according to claim 1, it is characterised in that the voltage regulation unit, which is provided with, unidirectionally leads
Current circuit and internal energy storage device, the power output end of the voltage regulation unit pass through one-way guide flow circuit and microcontroller, acceleration
Degree meter and the power end of memory cell are connected;The power end of the internal energy storage device respectively with microcontroller, accelerometer and
The power end connection of memory cell, causes the fracture of external power source line to be, by the internal energy storage when occurring ultra-high g penetration impact
Device is microcontroller, accelerometer and memory cell provide temporary source.
3. active MEMS inertia switches according to claim 2, it is characterised in that the one-way guide flow circuit includes first
Diode and the second diode, the internal energy storage device include the first electric capacity and the second electric capacity, wherein:
The power output end of the voltage regulation unit is connected by the first diode with the power end of microcontroller and accelerometer, institute
State the power end of first electric capacity one end ground connection, the power end of other end connection microcontroller and accelerometer;The voltage regulation unit
Power output end pass through the second diode and the power end of memory cell and connect, the second electric capacity one end ground connection, the other end
The power end of memory cell is connect in succession.
4. active MEMS inertia switches according to claim 3 a, it is characterised in that numeral input of the microcontroller
Output port is connected to the power output end of voltage regulation unit by a resistance, the connection status to detect external power source;When outer
During portion's power supply connection, the actual acceleration data Cun Chudao memory cell that the microcontroller gathers the accelerometer;When
When external power source disconnects, the actual acceleration data storage that the microcontroller gathers the accelerometer is in microcontroller sheet
In the memory chip of body.
5. active MEMS inertia switches according to claim 1, it is characterised in that the active MEMS inertia switches are also wrapped
Threshold setting unit is included, the acceleration rate threshold for receiving and preserving user's input.
6. active MEMS inertia switches according to claim 1, it is characterised in that the range of the accelerometer is more than
100g, response frequency are more than 1KHz.
7. the active MEMS inertia switches according to claim 1 or 6, it is characterised in that the accelerometer disposition three
Orthogonal sensitive axes, can perceive the inertia force of any direction in three dimensions.
8. active MEMS inertia switches according to claim 1, it is characterised in that the traffic rate of the microcontroller is big
In 2Mbps;And/or, the microcontroller is provided with internal clock source.
9. active MEMS inertia switches according to claim 1, it is characterised in that the active MEMS inertia switches are used
Double-shell structure, wherein, padded coaming is provided between inner casing and shell, and use dosing technology by voltage regulation unit, microcontroller
Device, accelerometer, memory cell and electronic switch are integrally potted in inner casing.
10. active MEMS inertia switches according to claim 9, it is characterised in that the voltage regulation unit, microcontroller,
Accelerometer, memory cell and electronic switch are integrated on a circuit board, with fluid sealant to integrated voltage stabilizing list on circuit boards
Member, microcontroller, accelerometer, memory cell and electronic switch carry out sealing smearing, inner casing are put into afterwards, using Embedding Material
Carry out overall embedding;Inner casing is fitted into shell, the bottom gap addition padded coaming of inner casing and shell, peripheral clearance addition filling
Material.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110601527A (en) * | 2019-09-30 | 2019-12-20 | 南京理工大学 | Overload-resistant power supply module for data acquisition of outer missile way |
CN114169016A (en) * | 2021-11-08 | 2022-03-11 | 陕西千山航空电子有限责任公司 | Inertia control device |
WO2022052801A1 (en) * | 2020-09-08 | 2022-03-17 | 陈林 | Data transmission apparatus and method |
CN114236270A (en) * | 2021-11-25 | 2022-03-25 | 北京时代精衡航天科技有限公司 | A miniature transient high overload measuring device and method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6314887B1 (en) * | 2000-02-22 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Army | Microelectromechanical systems (MEMS)-type high-capacity inertial-switching device |
CN201489839U (en) * | 2009-08-13 | 2010-05-26 | 合肥钦力电子有限公司 | Power down zero returning circuit of stepping motor for meter |
CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
CN102522262A (en) * | 2011-12-15 | 2012-06-27 | 华东光电集成器件研究所 | MEMS acceleration switch |
-
2017
- 2017-06-29 CN CN201710513804.5A patent/CN107153384A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6314887B1 (en) * | 2000-02-22 | 2001-11-13 | The United States Of America As Represented By The Secretary Of The Army | Microelectromechanical systems (MEMS)-type high-capacity inertial-switching device |
CN201489839U (en) * | 2009-08-13 | 2010-05-26 | 合肥钦力电子有限公司 | Power down zero returning circuit of stepping motor for meter |
CN102259827A (en) * | 2011-06-25 | 2011-11-30 | 中北大学 | Method for encapsulating MEMS (micro electro mechanical system) high-range acceleration sensor |
CN102522262A (en) * | 2011-12-15 | 2012-06-27 | 华东光电集成器件研究所 | MEMS acceleration switch |
Non-Patent Citations (1)
Title |
---|
蔺怡: "惯性微流体导电开关的稳健优化设计", 《中国优秀硕士学位论文全文数据库 工程科技II辑》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110601527A (en) * | 2019-09-30 | 2019-12-20 | 南京理工大学 | Overload-resistant power supply module for data acquisition of outer missile way |
CN110601527B (en) * | 2019-09-30 | 2024-04-19 | 南京理工大学 | Overload-resistant power supply module for external ballistic data acquisition |
WO2022052801A1 (en) * | 2020-09-08 | 2022-03-17 | 陈林 | Data transmission apparatus and method |
CN114169016A (en) * | 2021-11-08 | 2022-03-11 | 陕西千山航空电子有限责任公司 | Inertia control device |
CN114236270A (en) * | 2021-11-25 | 2022-03-25 | 北京时代精衡航天科技有限公司 | A miniature transient high overload measuring device and method |
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