CN107116874B - A kind of temperature control semiconductor BOPET polyester base film and its production technology - Google Patents
A kind of temperature control semiconductor BOPET polyester base film and its production technology Download PDFInfo
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- CN107116874B CN107116874B CN201710269997.4A CN201710269997A CN107116874B CN 107116874 B CN107116874 B CN 107116874B CN 201710269997 A CN201710269997 A CN 201710269997A CN 107116874 B CN107116874 B CN 107116874B
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- 229920000728 polyester Polymers 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- 239000010410 layer Substances 0.000 claims abstract description 111
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000004594 Masterbatch (MB) Substances 0.000 claims abstract description 56
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 44
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 39
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 39
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 39
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000002344 surface layer Substances 0.000 claims abstract description 24
- 239000012792 core layer Substances 0.000 claims abstract description 20
- 238000001125 extrusion Methods 0.000 claims abstract description 17
- 239000011162 core material Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 14
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000004615 ingredient Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005453 pelletization Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 34
- 239000011229 interlayer Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 241000353097 Molva molva Species 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 210000002469 basement membrane Anatomy 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/001—Combinations of extrusion moulding with other shaping operations
- B29C48/0018—Combinations of extrusion moulding with other shaping operations combined with shaping by orienting, stretching or shrinking, e.g. film blowing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
- B29C48/07—Flat, e.g. panels
- B29C48/08—Flat, e.g. panels flexible, e.g. films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/16—Articles comprising two or more components, e.g. co-extruded layers
- B29C48/18—Articles comprising two or more components, e.g. co-extruded layers the components being layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D7/00—Producing flat articles, e.g. films or sheets
- B29D7/01—Films or sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/24—All layers being polymeric
- B32B2250/244—All polymers belonging to those covered by group B32B27/36
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
- Shaping By String And By Release Of Stress In Plastics And The Like (AREA)
Abstract
The invention discloses a kind of temperature control semiconductor BOPET polyester base film and its production technologies, are characterized in that: including ABCDE five-layer structure, C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, and material includes SiO2 anti stick master batch and glossy polyester melt, and B/D layers are characteristic of semiconductor layer, and material includes temperature control characteristic of semiconductor master batch, glossy polyester melt；The A layers of component with E layer material with following mass percent: 1%~2% SiO2 anti stick master batch and 98%~99% glossy polyester melt；B/D layer material has the component of following mass percent: 20%~30% characteristic of semiconductor master batch and 70%~80% glossy polyester melt；C layer material is 100% glossy polyester melt.The present invention has light PET that co-extrusion film forming is blended by temperature control semiconductor master batch and anti stick master batch with polyester, and characteristic of semiconductor, which is placed on film layer interlayer, prevents falling off for characteristic of semiconductor layer, improves the stability of performance film.
Description
Technical field
The present invention relates to a kind of temperature control semiconductor BOPET polyester base film and its production technologies.
Background technique
BOPET polyester film has the characteristics that intensity is high, rigidity is good, transparent, glossiness is high, can pass through coating or vacuum
The mode aluminized promotes its performance to widened application field；Coating is to be coated with one layer of certain characteristic high score in film surface
Sub- solution, such as this paper similar temperature control semiconductor polyester film are to have the macromolecule of temperature control characteristic of semiconductor molten by being coated with
Liquid reaches this effect on polyester film surface layer；The present invention passes through real to melt vertical pulling is passed through after polyester raw material blending and modifying
Existing BOPET basement membrane interlayer has temperature control characteristic of semiconductor；For rubbing method, the present invention reduce after road manufacturing procedure and at
This, characteristic of semiconductor stablize it is permanent, will not the characteristic coating solvent on surface layer as rubbing method be easy to fall off that characteristic is caused to disappear.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of temperature control semiconductor BOPET polyester base film and its production works
Skill.
To achieve the above object, the present invention provides the following technical scheme that
A kind of temperature control semiconductor BOPET polyester base film can be led at 120 DEG C or less, and 120 DEG C or more insulate, including ABCDE five
Layer structure, it is characterised in that: C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, material packet
SiO2 anti stick master batch and glossy polyester melt are included, B/D layers are characteristic of semiconductor layer, and material includes characteristic of semiconductor master batch, has
Light polyester fondant；The A layers of component with E layer material with following mass percent: 1%~2% SiO2 anti stick master batch and
98%~99% glossy polyester melt；The B layers of component with D layer material with following mass percent: 20%~30% temperature control
Characteristic of semiconductor master batch and 70%~80% glossy polyester melt；C layer material is 100% glossy polyester melt.
Preferably, A/E thickness degree, which accounts for 10%~15%, B/D thickness degree and accounts for 15%~20%, C thickness degree, accounts for 40%.
Preferably, SiO2 anti stick master batch and characteristic of semiconductor master batch are by having micron silica, nanoscale temperature
Ferroelectric media barium strontium titanate is controlled respectively with glossy polyester melt using blend method preparation gained.
The production technology of the temperature control semiconductor BOPET polyester base film, includes the following steps:
Step 1: 2.5~3.5 μm of SiO2 powder and 0.1~0.2 μm of barium strontium titanate powder are melted with glossy polyester respectively
After body is blended, 3% SiO2 master batch and 10% semiconductor master batch are made through Cast Strip pelletizing；
Step 2: by the SiO2 master batch on the surface layer A/E, the glossy polyester melt of B/D significant level intermediate core layer and intermediate core layer
Polyester fondant is respectively fed to five layer co-extruding biaxial stretched equipment and squeezes out respectively, and B/D layers are squeezed out by a double screw extruder；A/
E layers are squeezed out by a double screw extruder；
Step 3: the surface layer A/E SiO2 anti stick master batch is melted in 270 DEG C~285 DEG C extrusions, mixed through glossy polyester melt
It is 1100~1400PPM glossy polyester melt that conjunction, which is diluted to SiO2 content, after metering pump-metered is delivered to filter filtering
To five-layer co-squeezing die head；B/D significant level is melted in 270 DEG C~285 DEG C extrusions, is diluted to characteristic through glossy polyester melt mixed and is situated between
Matter content is 35000~50000PPM glossy polyester melt, to five-layer co-squeezing after metering pump-metered delivery filter filtering
Die head；C layers of intermediate core layer directly transport glossy polyester melt after major ingredient measures pump-metered to five-layer co-squeezing by polyester fondant pump
Die head；
Step 4: slab is squeezed out through five-layer co-squeezing die head, extrusion pressure controls 45~50bar；Operating cold drum above
It is quickly cooled down, cooling temperature controls 30~35 DEG C；
Step 5: again by 85 DEG C~105 DEG C preheatings longitudinal directions and 105 DEG C~115 DEG C cross directional stretch, longitudinal stretching is than control
3.5~3.8, cross directional stretch ratio is controlled 3.8~4.0；
Step 6: through 235 DEG C~245 DEG C setting treatment rolling after cooling after completion biaxial tension, thickness 25~75 is made
μm semiconductor BOPET polyester base film parent roll, then carry out parent roll cutting.
Preferably, in step 2 B/D layers squeezed out by double screw extruder；A/E layers are squeezed by a double screw extruder
Out.
Preferably, in step 3, it is the disk filter of 15um~20um that the filter on the surface layer A/E, which selects precision,；B/D is special
Property layer filter to select precision be disk filter that precision is 5um~10um.
Preferably, Leng Gushang is adsorbed on by high-pressure electrostatic before slab contacts cold drum in step 4.
Preferably, in step 5, calibrator is equipped in the front-end and back-end of drawing process.
Preferably, it in step 5, in longitudinal stretching process, is stretched using differential two-part.
In conclusion the present invention is due to using above technical scheme, have significant technical effect: the present invention is by half
Conductor master batch and anti stick master batch have light PET that co-extrusion film forming is blended with polyester, and characteristic of semiconductor, which is placed on film layer interlayer, to be prevented
Characteristic of semiconductor layer falls off, and improves the stability of performance film；The present invention tests under the conditions of 25 DEG C~120 DEG C, has good
Good electric conductivity becomes insulator because characteristic medium attribute itself changes at 120 DEG C or more, in addition, high-pressure electrostatic can be with
So that slab is attached to Leng Gushang well, keep cold scarce effect more preferable, calibrator is installed in the rear and front end of drawing process, it can be at any time
The variation of drawing process is monitored, and is made adjustment, is stretched using differential two-part, can be dropped while guaranteeing tensile elongation
The revolving speed of low shaft.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of temperature control semiconductor BOPET polyester base film.
Specific embodiment
A kind of temperature control semiconductor BOPET polyester base film of the present invention and its production technology are further described by Fig. 1.
Embodiment one:
A kind of temperature control semiconductor BOPET polyester base film can be led at 120 DEG C or less, and 120 DEG C or more insulate, including ABCDE five
Layer structure, it is characterised in that: C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, material packet
SiO2 anti stick master batch and glossy polyester melt are included, B/D layers are characteristic of semiconductor layer, and material includes characteristic of semiconductor master batch, has
Light polyester fondant；The A layers of component with E layer material with following mass percent: 1% SiO2 anti stick master batch and 99% there is light
Polyester fondant；B/D layer material has the component of following mass percent: 20% characteristic of semiconductor master batch and 80% glossy polyester
Melt；C layer material is 100% glossy polyester melt.
Preferably, A/E thickness degree, which accounts for 10%, B/D thickness degree and accounts for 20%, C thickness degree, accounts for 40%.
Preferably, SiO2 anti stick master batch and characteristic of semiconductor master batch are by there is micron silica, nanoscale half
Conductor ferroelectric media barium strontium titanate is respectively with glossy polyester melt using blend method preparation gained.
The production technology of the temperature control semiconductor BOPET polyester base film, includes the following steps:
Step 1: respectively by 2.5 μm of SiO2 powder and 0.1 μm of barium strontium titanate powder and glossy polyester it is melt blended after, warp
3% SiO2 master batch and 10% semiconductor master batch is made in Cast Strip pelletizing；
Step 2: by the SiO2 master batch on the surface layer A/E, the glossy polyester melt of B/D significant level intermediate core layer and intermediate core layer
Polyester fondant is respectively fed to five layer co-extruding biaxial stretched equipment and squeezes out respectively, and B/D layers are squeezed out by a double screw extruder；A/
E layers are squeezed out by a double screw extruder；
Step 3: the surface layer A/E SiO2 anti stick master batch is melted in 270 DEG C of extrusions, is diluted through glossy polyester melt mixed
It is 1100PPM glossy polyester melt at SiO2 content, to five-layer co-squeezing mould after metering pump-metered is delivered to filter filtering
Head；B/D significant level is melted in 270 DEG C of extrusions, and be diluted to characteristic medium content through glossy polyester melt mixed has for 35000PPM
Light polyester fondant, to five-layer co-squeezing die head after metering pump-metered delivery filter filtering；C layers of intermediate core layer are by polyester fondant
Pump directly transports glossy polyester melt after major ingredient measures pump-metered to five-layer co-squeezing die head；
Step 4: slab is squeezed out through five-layer co-squeezing die head, extrusion pressure controls 45bar；It is quick above in the cold drum of operating
Cooling, cooling temperature controls 30 DEG C；
Step 5: again by 85 DEG C of preheatings longitudinal directions and 105 DEG C of cross directional stretch, longitudinal stretching is than control 3.5, cross directional stretch ratio
Control is 3.8；
Step 6: through 235 DEG C of setting treatment rolling after cooling after completion biaxial tension, 25 μm of thickness of semiconductor is made
Then BOPET polyester base film parent roll carries out parent roll cutting.
Preferably, in step 2 B/D layers squeezed out by double screw extruder；A/E layers are squeezed by a double screw extruder
Out.
Preferably, in step 3, it is the disk filter of 15um that the filter on the surface layer A/E, which selects precision,；B/D significant level
It is the disk filter that precision is 5um that filter, which selects precision,.
Preferably, cold bulging surface is adsorbed on using high-pressure electrostatic before slab contacts cold drum in step 4.
Preferably, in step 5, calibrator is equipped in the front-end and back-end of drawing process.
Preferably, it in step 5, in longitudinal stretching process, is stretched using differential two-part.
Embodiment two:
A kind of temperature control semiconductor BOPET polyester base film can be led at 120 DEG C or less, and 120 DEG C or more insulate, including ABCDE five
Layer structure, it is characterised in that: C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, material packet
SiO2 anti stick master batch and glossy polyester melt are included, B/D layers are characteristic of semiconductor layer, and material includes characteristic of semiconductor master batch, has
Light polyester fondant；The A layers of component with E layer material with following mass percent: 2% SiO2 anti stick master batch and 99% there is light
Polyester fondant；B/D layer material has the component of following mass percent: 30% characteristic of semiconductor master batch and 70% glossy polyester
Melt；C layer material is 100% glossy polyester melt.
Preferably, A/E thickness degree, which accounts for 15%, B/D thickness degree and accounts for 15%, C thickness degree, accounts for 40%.
Preferably, SiO2 anti stick master batch and characteristic of semiconductor master batch are by there is micron silica, nanoscale half
Conductive medium barium strontium titanate is respectively with glossy polyester melt using blend method preparation gained.
The production technology of the semiconductor BOPET polyester base film, includes the following steps:
Step 1: respectively by 3.5 μm of SiO2 powder and 0.2 μm of barium strontium titanate powder and glossy polyester it is melt blended after, warp
3% SiO2 master batch and 10% semiconductor master batch is made in Cast Strip pelletizing；
Step 2: by the SiO2 master batch on the surface layer A/E, the glossy polyester melt of B/D significant level intermediate core layer and intermediate core layer
Polyester fondant is respectively fed to five layer co-extruding biaxial stretched equipment and squeezes out respectively, and B/D layers are squeezed out by a double screw extruder；A/
E layers are squeezed out by a double screw extruder；
Step 3: the surface layer A/E SiO2 anti stick master batch is melted in 285 DEG C of extrusions, is diluted through glossy polyester melt mixed
It is 1400PPM glossy polyester melt at SiO2 content, to five-layer co-squeezing mould after metering pump-metered is delivered to filter filtering
Head；B/D significant level is melted in 285 DEG C of extrusions, and be diluted to characteristic medium content through glossy polyester melt mixed has for 50000PPM
Light polyester fondant, to five-layer co-squeezing die head after metering pump-metered delivery filter filtering；C layers of intermediate core layer are by polyester fondant
Pump directly transports glossy polyester melt after major ingredient measures pump-metered to five-layer co-squeezing die head；
Step 4: slab is squeezed out through five-layer co-squeezing die head, extrusion pressure controls 50bar；It is quick above in the cold drum of operating
Cooling, cooling temperature controls 35 DEG C；
Step 5: again by 105 DEG C of preheatings longitudinal directions and 115 DEG C of cross directional stretch, longitudinal stretching is than control 3.8, cross directional stretch
Than controlling 4.0；
Step 6: through 245 DEG C of setting treatment rolling after cooling after completion biaxial tension, 75 μm of thickness of semiconductor is made
Then BOPET polyester base film parent roll carries out parent roll cutting.
Preferably, in step 2 B/D layers squeezed out by double screw extruder；A/E layers are squeezed by a double screw extruder
Out.
Preferably, in step 3, it is the disk filter of 20um that the filter on the surface layer A/E, which selects precision,；B/D significant level
It is the disk filter that precision is 10um that filter, which selects precision,.
Preferably, cold bulging surface is adsorbed on using high-pressure electrostatic before slab contacts cold drum in step 4.
Preferably, in step 5, calibrator is equipped in the front-end and back-end of drawing process.
Preferably, it in step 5, in longitudinal stretching process, is stretched using differential two-part.
Embodiment three:
A kind of temperature control semiconductor BOPET polyester base film can be led at 120 DEG C or less, and 120 DEG C or more insulate, including ABCDE five
Layer structure, it is characterised in that: C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, material packet
SiO2 anti stick master batch and glossy polyester melt are included, B/D layers are characteristic of semiconductor layer, and material includes characteristic of semiconductor master batch, has
Light polyester fondant；The A layers of component with E layer material with following mass percent: 1.5% SiO2 anti stick master batch and 98.5%
Glossy polyester melt；B/D layer material has a component of following mass percent: 25% characteristic of semiconductor master batch and 75% having
Light polyester fondant；C layer material is 100% glossy polyester melt.
Preferably, A/E thickness degree, which accounts for 12%, B/D thickness degree and accounts for 18%, C thickness degree, accounts for 40%.
Preferably, SiO2 anti stick master batch and characteristic of semiconductor master batch are by there is micron silica, nanoscale half
Conductive medium barium strontium titanate is respectively with glossy polyester melt using blend method preparation gained.
The production technology of the semiconductor BOPET polyester base film, includes the following steps:
Step 1: respectively by 2 μm of SiO2 powder and 0.15 μm of barium strontium titanate powder and glossy polyester it is melt blended after, warp
3% SiO2 master batch and 10% semiconductor master batch is made in Cast Strip pelletizing；
Step 2: by the SiO2 master batch on the surface layer A/E, the glossy polyester melt of B/D significant level intermediate core layer and intermediate core layer
Polyester fondant is respectively fed to five layer co-extruding biaxial stretched equipment and squeezes out respectively, and B/D layers are squeezed out by a double screw extruder；A/
E layers are squeezed out by a double screw extruder；
Step 3: the surface layer A/E SiO2 master batch is melted in 280 DEG C of extrusions, is diluted to SiO2 through glossy polyester melt mixed
Content is 1200PPM glossy polyester melt, to five-layer co-squeezing die head after metering pump-metered is delivered to filter filtering；B/D
Significant level is melted in 280 DEG C of extrusions, and being diluted to characteristic medium content through glossy polyester melt mixed is 40000PPM glossy polyester
Melt, to five-layer co-squeezing die head after metering pump-metered delivery filter filtering；C layers of intermediate core layer are pumped direct by polyester fondant
Glossy polyester melt is conveyed after major ingredient measures pump-metered to five-layer co-squeezing die head；
Step 4: slab is squeezed out through five-layer co-squeezing die head, extrusion pressure controls 48bar；It is quick above in the cold drum of operating
Cooling, cooling temperature controls 32 DEG C；
Step 5: again by 95 DEG C of preheatings longitudinal directions and 110 DEG C of cross directional stretch, longitudinal stretching is than control 3.6, cross directional stretch ratio
Control is 3.9；
Step 6: through 240 DEG C of setting treatment rolling after cooling after completion biaxial tension, 50 μm of thickness of semiconductor is made
Then BOPET polyester base film parent roll carries out parent roll cutting.
Preferably, in step 2 B/D layers squeezed out by double screw extruder；A/E layers are squeezed by a double screw extruder
Out.
Preferably, in step 3, it is the disk filter of 18um that the filter on the surface layer A/E, which selects precision,；B/D significant level
It is the disk filter that precision is 8um that filter, which selects precision,.
Preferably, cold bulging surface is adsorbed on using high-pressure electrostatic before slab contacts cold drum in step 4.
Preferably, in step 5, calibrator is equipped in the front-end and back-end of drawing process.
Preferably, it in step 5, in longitudinal stretching process, is stretched using differential two-part.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
Those of ordinary skill for, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of temperature control semiconductor BOPET polyester base film, can lead at 120 DEG C or less, 120 DEG C or more insulate, including ABCDE five
Layer structure, it is characterised in that: C layers are intermediate core layer, and material is big glossy polyester melt；A/E layers are upper and lower surface layer, material packet
Include SiO2Anti stick master batch and glossy polyester melt, B/D layers are characteristic of semiconductor layer, and material includes that temperature control characteristic of semiconductor is female
Grain, glossy polyester melt；The A layers of component with E layer material with following mass percent: 1%~2% SiO2Anti stick master batch
And 98%~99% glossy polyester melt；B/D layer material has the component of following mass percent: 20%~30% temperature control half
Conductor characteristics master batch and 70%~80% glossy polyester melt；C layer material is 100% big glossy polyester melt；
A/E thickness degree, which accounts for 10%~15%, B/D thickness degree and accounts for 15%~20%, C thickness degree, accounts for 40%；
SiO2Anti stick master batch and temperature control characteristic of semiconductor master batch are by micron silica, nanoscale temperature control semiconductor medium
Barium strontium titanate is respectively with glossy polyester melt using blend method preparation gained.
2. the production technology of temperature control semiconductor BOPET polyester base film as described in claim 1, includes the following steps:
Step 1: respectively by 2.5~3.5 μm of SiO2Powder and 0.1~0.2 μm of barium strontium titanate powder and glossy polyester are melt blended
Afterwards, 3% SiO is made through Cast Strip pelletizing2Master batch and 10% semiconductor master batch；
Step 2: the upper and lower surface layer A/E, the glossy polyester melt of B/D characteristic of semiconductor layer and intermediate core layer polyester fondant are distinguished
It is sent into five layer co-extruding biaxial stretched equipment and squeezes out respectively, B/D layers are squeezed out by a double screw extruder；The upper and lower surface layer A/E by
One double screw extruder squeezes out；
Step 3: by the SiO on the upper and lower surface layer A/E2Anti stick master batch is melted in 270 DEG C~285 DEG C extrusions, through glossy polyester melt
Mixed diluting is at SiO2Content is 1100~1400PPM glossy polyester melt, is delivered to filter filtering by measuring pump-metered
Afterwards to five-layer co-squeezing die head；B/D characteristic of semiconductor layer is melted in 270 DEG C~285 DEG C extrusions, is diluted through glossy polyester melt mixed
It is 35000~50000PPM glossy polyester melt at semiconductor medium content, after metering pump-metered delivery filter filtering
To five-layer co-squeezing die head；C layers of intermediate core layer directly transport big glossy polyester melt by polyester fondant pump and measure pump-metered through major ingredient
Afterwards to five-layer co-squeezing die head；
Step 4: slab is squeezed out through five-layer co-squeezing die head, extrusion pressure controls 45~50bar；It is quick above in the cold drum of operating
Cooling, cooling temperature controls 30~35 DEG C；Slab is adsorbed before contacting cold drum using high-pressure electrostatic；
Step 5: again by 85 DEG C~105 DEG C preheatings longitudinal directions and 105 DEG C~115 DEG C cross directional stretch, longitudinal stretching is than control 3.5
~3.8, cross directional stretch ratio is controlled 3.8~4.0；In longitudinal stretching process, stretched using differential two-part；
Step 6: through 235 DEG C~245 DEG C setting treatment rolling after cooling after completion biaxial tension, 25~75 μm of thickness are made
Then temperature control semiconductor BOPET polyester base film parent roll carries out parent roll cutting.
3. the production technology of temperature control semiconductor BOPET polyester base film according to claim 2, it is characterised in that: step
In three, it is the disk filter of 15um~20um that the filter on the upper and lower surface layer A/E, which selects precision,；The mistake of B/D characteristic of semiconductor layer
It is the disk filter that precision is 5um~10um that filter, which selects precision,.
4. the production technology of temperature control semiconductor BOPET polyester base film according to claim 2, it is characterised in that: step 5
In, calibrator is equipped in the front-end and back-end of drawing process.
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| CN104044318B (en) * | 2013-03-11 | 2016-02-24 | 清华大学 | Polymer-based dielectric energy-storage composite material of a kind of laminated construction and preparation method thereof |
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