CN107112382A - A kind of active drive inorganic light-emitting diode display device structure - Google Patents
A kind of active drive inorganic light-emitting diode display device structure Download PDFInfo
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Abstract
本发明公开了一种主动驱动无机发光二极管显示器件结构，其中公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极的应力最小，保证了互连电极的稳定性和导电性，这样就提高了公共电极的导电性。
The invention discloses an active driving inorganic light emitting diode display device structure, wherein the height of the connection area between the common electrode and the interconnection electrode is the same as the height of the connection area between the pixel light-emitting device and the interconnection electrode, and the same height ensures the minimum stress of the interconnection electrode , to ensure the stability and conductivity of the interconnection electrodes, thus improving the conductivity of the common electrode.
Description
本发明涉及一种主动驱动无机发光二极管显示器件结构，特别是提高像素驱动电路和像素发光器件之间互连电极稳定性和公共电极导电性的无机发光二极管显示器件结构。The invention relates to a structure of an actively driven inorganic light emitting diode display device, in particular to a structure of an inorganic light emitting diode display device which improves the stability of interconnected electrodes and the conductivity of a common electrode between a pixel drive circuit and a pixel light emitting device.
微型显示器是微型投影仪和穿戴式显示的核心部件。当前微型显示器产品主要采用两种技术：硅上液晶显示装置(LCOS)和数字光处理技术(DLP)。这两种技术都属于反射型显示技术，光利用率很低，而且需要采用额外的光学系统，这样就增加了投影仪和近眼显示的体积和成本。最近出现的一种无机发光二极管显示技术属于主动发光技术，很有可能取代现有产品。微型显示器与普通平板显示器的一个主要区别是其有效显示面积小，即显示分辨率高，像素间隔小，一般像素尺寸在几微米到十几微米。随着显示分辨率的提高，对无机发光二极管显示器件的互连电极的稳定性和公共电极的导电性要求越来越高。Microdisplays are at the heart of pico projectors and wearable displays. Current microdisplay products mainly use two technologies: liquid crystal on silicon (LCOS) and digital light processing (DLP). Both of these technologies are reflective display technologies, which have low light utilization and require an additional optical system, which increases the size and cost of projectors and near-eye displays. An inorganic light-emitting diode display technology that has recently emerged is an active light-emitting technology that is likely to replace existing products. A main difference between a microdisplay and an ordinary flat panel display is that its effective display area is small, that is, the display resolution is high, and the pixel spacing is small. The general pixel size is several microns to more than ten microns. With the improvement of display resolution, the requirements for the stability of interconnect electrodes and the conductivity of common electrodes of inorganic light emitting diode display devices are getting higher and higher.
图1是现有技术的主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电 极24，像素发光器件与互连电极连接区域的高度Ha，公共电极与互连电极连接区域的高度Hc。从图1可以看出，公共电极与互连电极连接区域的高度Hc小于像素发光器件与互连电极连接区域的高度Ha，这些就造成了像素发光器件区域的互连电极23和公共电极区域的互连电极24存在应力，影响互联电极的稳定性和导电性，进而影响显示图像的均匀性。FIG. 1 is a schematic structural diagram of an actively driven inorganic light emitting diode display device in the prior art. Wherein, the pixel light-emitting device includes: a substrate 1 where the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 where the pixel driving circuit device is located, and a contact electrode 22 of the pixel driving device. Also includes: the interconnection electrode 23 of the pixel light-emitting device area, the interconnection electrode 23 of the common electrode area pole 24, the height Ha of the connection area between the pixel light-emitting device and the interconnection electrode, and the height Hc of the connection area between the common electrode and the interconnection electrode. It can be seen from FIG. 1 that the height Hc of the connection area between the common electrode and the interconnection electrode is smaller than the height Ha of the connection area between the pixel light-emitting device and the interconnection electrode, which causes the interconnection electrode 23 in the pixel light-emitting device area and the common electrode area. The interconnection electrode 24 has stress, which affects the stability and conductivity of the interconnection electrode, and further affects the uniformity of the displayed image.
发明内容Contents of the invention
本发明的主要目的是提高主动驱动无机发光二极管显示器件的像素驱动电路和像素发光器件之间互连电极稳定性和公共电极导电性。The main purpose of the present invention is to improve the stability of the interconnect electrode and the conductivity of the common electrode between the pixel driving circuit and the pixel light emitting device that actively drive the inorganic light emitting diode display device.
本发明的基本原理是：在像素发光器件所在衬底上的公共电极位置上同时保留P型半导体层和N型半导体层，公共电极位置的P型半导体层和N型半导体层通过电极连接起来，这样公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极的应力最小，保证了互连电极的稳定性和导电性，这样就提高了公共电极的导电性。The basic principle of the present invention is: keep the P-type semiconductor layer and the N-type semiconductor layer at the position of the common electrode on the substrate where the pixel light-emitting device is located, and the P-type semiconductor layer and the N-type semiconductor layer at the position of the common electrode are connected through electrodes, In this way, the height of the connection area between the common electrode and the interconnection electrode is the same as the height of the connection area between the pixel light-emitting device and the interconnection electrode, and the same height ensures the minimum stress on the interconnection electrode, and ensures the stability and conductivity of the interconnection electrode. The conductivity of the common electrode is improved.
根据本发明的一个方面，在像素发光器件衬底上的公共电极区域，刻蚀部分P型半导体层，保留部分P型半导体层，通过电极把P型半导体层和N型半导体层连接起来，这样公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，公共电极所起功能是电子注入功能。According to one aspect of the present invention, in the common electrode region on the substrate of the pixel light-emitting device, part of the P-type semiconductor layer is etched, part of the P-type semiconductor layer is reserved, and the P-type semiconductor layer and the N-type semiconductor layer are connected through electrodes, so that The height of the connection area between the common electrode and the interconnection electrode is the same as the height of the connection area between the pixel light-emitting device and the interconnection electrode, and the function of the common electrode is electron injection.
根据本发明的一个方面，在像素发光器件衬底上的公共电极区域，刻蚀部分N型半导体层，保留部分N型半导体层，通过电极把P型半导体层和N型半导体层连接起来，这样公共电极与互连电极连接区域的高度和 像素发光器件与互连电极连接区域的高度相同，公共电极所起功能是空穴注入功能。According to one aspect of the present invention, in the common electrode region on the substrate of the pixel light-emitting device, part of the N-type semiconductor layer is etched, part of the N-type semiconductor layer is reserved, and the P-type semiconductor layer and the N-type semiconductor layer are connected through electrodes, so that The height of the connection area between the common electrode and the interconnection electrode and The height of the pixel light-emitting device is the same as that of the connection area of the interconnection electrode, and the function of the common electrode is hole injection.
根据本发明的一个方面，公共电极与每个互联电极连接区域的绝缘层开口面积与每个像素发光器件的绝缘层开口面积相同。According to one aspect of the present invention, the opening area of the insulating layer in the connection region between the common electrode and each interconnection electrode is the same as the opening area of the insulating layer of each pixel light emitting device.
根据本发明的一个方面，公共电极与每个互联电极连接区域的绝缘层开口面积与每个像素发光器件的绝缘层开口面积不同。According to one aspect of the present invention, the opening area of the insulating layer in the connection region between the common electrode and each interconnection electrode is different from the opening area of the insulating layer in each pixel light emitting device.
根据本发明的一个方面，公共电极上的每个互连电极与每个像素发光器件的互连电极面积相同。According to one aspect of the present invention, each interconnection electrode on the common electrode has the same area as the interconnection electrode of each pixel light emitting device.
根据本发明的一个方面，公共电极上的每个互连电极与每个像素发光器件的互连电极面积不同。According to one aspect of the present invention, each interconnection electrode on the common electrode has a different area from that of each pixel light emitting device.
根据本发明的一个方面，每个像素发光器件存在全部封闭的公共电极引线。According to one aspect of the present invention, each pixel light emitting device has a fully enclosed common electrode lead.
根据本发明的一个方面，每个像素发光器件存在部分封闭的公共电极引线。According to one aspect of the present invention, there is a partially enclosed common electrode lead for each pixel light emitting device.
根据本发明的一个方面，有效显示区域的周围存在虚设像素。According to one aspect of the present invention, there are dummy pixels around the effective display area.
根据本发明的一个方面，公共电极区域的互连电极形成闭合形状。According to an aspect of the present invention, the interconnection electrodes of the common electrode region form a closed shape.
本发明的积极效果在于：The positive effects of the present invention are:
1.在像素发光器件所在衬底上的公共电极位置上同时保留P型半导体层和N型半导体层，而且公共电极位置的P型半导体层和N型半导体层通过电极连接起来，保证了公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极承受的 应力最小，保证了互连电极的稳定性。1. At the position of the common electrode on the substrate where the pixel light-emitting device is located, the P-type semiconductor layer and the N-type semiconductor layer are kept at the same time, and the P-type semiconductor layer and the N-type semiconductor layer at the common electrode position are connected by electrodes, ensuring that the common electrode The height of the connection area of the interconnection electrode is the same as the height of the connection area of the pixel light-emitting device and the interconnection electrode, and the same height ensures that the interconnection electrode bears Stress is minimized, ensuring the stability of the interconnect electrodes.
2.公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，可以保证信号从像素驱动电路所在基板通过互连电极传输到公共电极上，提高导电均匀性，进而提高显示图像的均匀性。2. The height of the connection area between the common electrode and the interconnection electrode is the same as the height of the connection area between the pixel light-emitting device and the interconnection electrode, which can ensure that the signal is transmitted from the substrate where the pixel drive circuit is located to the common electrode through the interconnection electrode, improving the uniformity of conductivity. Further, the uniformity of the displayed image is improved.
图1是现有技术的主动驱动无机发光二极管显示器件结构示意图。FIG. 1 is a schematic structural diagram of an actively driven inorganic light emitting diode display device in the prior art.
图2是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起电子注入功能。Fig. 2 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the common electrode functions as electron injection.
图3是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起空穴注入功能。Fig. 3 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the common electrode functions as hole injection.
图4是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极上的每个互连电极与每个像素发光器件的互连电极面积相同。Fig. 4 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, each interconnection electrode on the common electrode has the same area as the interconnection electrode of each pixel light emitting device.
图5是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极上的每个互连电极与每个像素发光器件的互连电极面积不相同。Fig. 5 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the area of each interconnection electrode on the common electrode is different from that of each pixel light emitting device.
图6是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极的绝缘层开口面积与每个像素发光器件的绝缘层开口面积相同。FIG. 6 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the opening area of the insulating layer of the common electrode is the same as the opening area of the insulating layer of each pixel light emitting device.
图7是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极的绝缘层开口面积与每个像素发光器件的绝缘层开口面积 不相同。Fig. 7 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the opening area of the insulating layer of the common electrode and the opening area of the insulating layer of each pixel light-emitting device Are not the same.
图8是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件部分示意图。其中，每个像素发光器件存在部分封闭的公共电极引线。FIG. 8 is a partial schematic diagram of a pixel light-emitting device of an actively driven inorganic light-emitting diode display device according to the present invention. Wherein, each pixel light-emitting device has a partially enclosed common electrode lead.
图9是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。其中，有效显示区域的周围存在虚设像素。FIG. 9 is a partial schematic diagram of a pixel light-emitting device and interconnection electrodes of an actively driven inorganic light-emitting diode display device of the present invention. Wherein, there are dummy pixels around the effective display area.
图10是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。其中，公共电极区域的互连电极形成闭合形状。Fig. 10 is a partial schematic diagram of a pixel light-emitting device and interconnection electrodes of an actively driven inorganic light-emitting diode display device of the present invention. Wherein, the interconnected electrodes in the common electrode area form a closed shape.
下面结合附图描述本发明的具体实施方式。Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.
实施例一Embodiment one
图2是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起电子注入功能。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电极24，像素发光器件与互连电极连接区域的高度Ha，公共电极与互连电极连接区域的高度Hc。从图2可以看出，公共电极与互连电极连接区域的高度Hc等于像素发光器件与互连电极连接区域的高度Ha，这就最大程度地减小了像素发光器件区域的互连电极23和公共电极区域的互连电极24的应力，提高互联电极的稳定性和电导性，进而增加了显示图像的均匀性。 Fig. 2 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the common electrode functions as electron injection. Wherein, the pixel light-emitting device includes: a substrate 1 where the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 where the pixel driving circuit device is located, and a contact electrode 22 of the pixel driving device. It also includes: the interconnection electrode 23 in the region of the pixel light-emitting device, the interconnection electrode 24 in the common electrode region, the height Ha of the connection region between the pixel light-emitting device and the interconnection electrode, and the height Hc of the connection region between the common electrode and the interconnection electrode. It can be seen from FIG. 2 that the height Hc of the connection region between the common electrode and the interconnection electrode is equal to the height Ha of the connection region between the pixel light emitting device and the interconnection electrode, which minimizes the interconnection electrode 23 and the interconnection electrode 23 in the pixel light emitting device region. The stress of the interconnection electrode 24 in the common electrode area improves the stability and electrical conductivity of the interconnection electrode, thereby increasing the uniformity of the displayed image.
实施例二Embodiment two
图3是本发明的主动驱动无机发光二极管显示器件结构示意图。与实施例一的区别是公共电极起空穴注入功能。Fig. 3 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. The difference from Embodiment 1 is that the common electrode functions as hole injection.
实施例三Embodiment three
图4是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电极24，每个像素发光器件的互连电极面积Ba，公共电极上的每个互连电极面积Bc。公共电极上的每个互连电极面积Bc与每个像素发光器件的互连电极面积Ba相同。Fig. 4 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the pixel light-emitting device includes: a substrate 1 where the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 where the pixel driving circuit device is located, and a contact electrode 22 of the pixel driving device. It also includes: the interconnection electrode 23 in the region of the pixel light-emitting device, the interconnection electrode 24 in the common electrode region, the area Ba of the interconnection electrode of each pixel light-emitting device, and the area Bc of each interconnection electrode on the common electrode. The area Bc of each interconnection electrode on the common electrode is the same as the area Ba of the interconnection electrode of each pixel light emitting device.
实施例四Embodiment Four
图5是本发明的一种主动驱动无机发光二极管显示器件结构示意图。与实施例三的区别是公共电极上的每个互连电极面积Bc与每个像素发光器件的互连电极面积Ba不相同。Fig. 5 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. The difference from the third embodiment is that the area Bc of each interconnected electrode on the common electrode is different from the area Ba of the interconnected electrode of each pixel light emitting device.
实施例五Embodiment five
图6是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电 极24，每个像素发光器件的绝缘层开口面积Ia，公共电极的绝缘层开口面积Ic。公共电极与每个互连电极连接区域的绝缘层开口面积Ic与每个像素发光器件的绝缘层开口面积Ia相同。FIG. 6 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. Wherein, the pixel light-emitting device includes: a substrate 1 where the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2 , a light-emitting inorganic semiconductor layer 3 , a P-type inorganic semiconductor layer 4 , a P-type electrode 5 , and an N-type electrode 6 . The pixel driving circuit device includes: a substrate 21 where the pixel driving circuit device is located, and a contact electrode 22 of the pixel driving device. Also includes: the interconnection electrode 23 of the pixel light-emitting device area, the interconnection electrode 23 of the common electrode area pole 24, the insulating layer opening area Ia of each pixel light emitting device, and the insulating layer opening area Ic of the common electrode. The opening area Ic of the insulating layer in the connection region between the common electrode and each interconnection electrode is the same as the opening area Ia of the insulating layer of each pixel light emitting device.
实施例六Embodiment six
图7是本发明的一种主动驱动无机发光二极管显示器件结构示意图。与实施例五的区别是公共电极与每个互连电极连接区域的绝缘层开口面积Ic与每个像素发光器件的绝缘层开口面积Ia不相同。Fig. 7 is a schematic structural diagram of an actively driven inorganic light emitting diode display device of the present invention. The difference from the fifth embodiment is that the opening area Ic of the insulating layer in the connection region between the common electrode and each interconnection electrode is different from the opening area Ia in the insulating layer of each pixel light emitting device.
实施例七Embodiment seven
图8是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件部分示意图。包括：N型无机半导体层2、P型电极5、N型电极6、公共电极引线10，其中，N型电极6作为公共电极，每个像素发光器件存在部分封闭的公共电极引线10，可以保证公共电极的均匀性。FIG. 8 is a partial schematic diagram of a pixel light-emitting device of an actively driven inorganic light-emitting diode display device according to the present invention. It includes: an N-type inorganic semiconductor layer 2, a P-type electrode 5, an N-type electrode 6, and a common electrode lead 10, wherein the N-type electrode 6 is used as a common electrode, and each pixel light-emitting device has a partially enclosed common electrode lead 10, which can ensure Uniformity of the common electrode.
实施例八Embodiment eight
图9是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。包括：N型无机半导体层2、P型电极5、N型电极6、虚设像素的P型电极11、像素发光器件区域的互连电极23、公共电极区域的互连电极24、虚设像素(dummy pixel)的互连电极25。从图中可以看出，36个像素发光器件组成显示有效显示区域，而虚设像素可以减少器件制作过程中工艺的不均匀性，保证有效显示区域的均匀性。FIG. 9 is a partial schematic diagram of a pixel light-emitting device and interconnection electrodes of an actively driven inorganic light-emitting diode display device of the present invention. Including: N-type inorganic semiconductor layer 2, P-type electrode 5, N-type electrode 6, P-type electrode 11 of dummy pixel, interconnection electrode 23 in pixel light-emitting device area, interconnection electrode 24 in common electrode area, dummy pixel (dummy pixel) interconnect electrodes 25. It can be seen from the figure that 36 pixel light-emitting devices form an effective display area, and dummy pixels can reduce the unevenness of the process in the device manufacturing process and ensure the uniformity of the effective display area.
实施例九Embodiment nine
图10是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。包括：N型无机半导体层2、P型电极5、N 型电极6、像素发光器件区域的互连电极23、公共电极区域的互连电极24。从图中可以看出，公共电极区域的互连电极24形成闭合形状。Fig. 10 is a partial schematic diagram of a pixel light-emitting device and interconnection electrodes of an actively driven inorganic light-emitting diode display device of the present invention. Including: N-type inorganic semiconductor layer 2, P-type electrode 5, N-type type electrode 6, the interconnection electrode 23 in the pixel light-emitting device area, and the interconnection electrode 24 in the common electrode area. As can be seen from the figure, the interconnection electrodes 24 in the common electrode region form a closed shape.
以上针对本发明的优选实施方式进行了描述，本领域技术人员应该理解，在不脱离本发明的精神和权利要求书的范围基础上可以进行各种变化和修改。 The preferred embodiments of the present invention have been described above, and those skilled in the art should understand that various changes and modifications can be made without departing from the spirit of the present invention and the scope of the claims.
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