CN107104158A - A kind of preparation method of doping CdTe nano photovoltaic materials - Google Patents
A kind of preparation method of doping CdTe nano photovoltaic materials Download PDFInfo
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- CN107104158A CN107104158A CN201710452467.3A CN201710452467A CN107104158A CN 107104158 A CN107104158 A CN 107104158A CN 201710452467 A CN201710452467 A CN 201710452467A CN 107104158 A CN107104158 A CN 107104158A
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- cdte nano
- photovoltaic material
- tellurium powder
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- 239000000463 material Substances 0.000 title claims abstract description 50
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 93
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000137 annealing Methods 0.000 claims abstract description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000005292 vacuum distillation Methods 0.000 claims abstract description 26
- 239000000243 solution Substances 0.000 claims abstract description 20
- 239000007864 aqueous solution Substances 0.000 claims abstract description 19
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- 238000005273 aeration Methods 0.000 claims description 24
- 238000003756 stirring Methods 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000000460 chlorine Substances 0.000 claims description 20
- 229910052801 chlorine Inorganic materials 0.000 claims description 20
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 17
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 16
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 16
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims 4
- 238000010992 reflux Methods 0.000 claims 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 2
- FHKUNGMXAOFZLF-UHFFFAOYSA-L cadmium(2+) methanol dichloride Chemical compound CO.[Cl-].[Cd+2].[Cl-] FHKUNGMXAOFZLF-UHFFFAOYSA-L 0.000 claims 2
- 239000002244 precipitate Substances 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 2
- 229960000935 dehydrated alcohol Drugs 0.000 claims 1
- 229960004756 ethanol Drugs 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 abstract description 36
- 239000007788 liquid Substances 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract description 9
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 abstract description 6
- 241000370738 Chlorion Species 0.000 abstract description 4
- 238000001556 precipitation Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 2
- 235000019441 ethanol Nutrition 0.000 description 20
- 238000013019 agitation Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- 230000009466 transformation Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 7
- 230000006837 decompression Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000013049 sediment Substances 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 229920002472 Starch Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000011267 electrode slurry Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 235000019698 starch Nutrition 0.000 description 4
- 239000008107 starch Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007613 slurry method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- -1 tellurium ion Chemical class 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation method of doping CdTe nano photovoltaic materials, suspended alcohol liquid is prepared using tellurium powder as raw material, and is mixed with the aqueous solution dropwise addition of caddy, the suspended aqueous solution is formed after vacuum distillation；Then ammonia is carried out to the suspended aqueous solution and takes reaction and aerated reaction in one's arms, cadmium telluride precipitation is obtained under the conditions of constant pressure back flow reaction, finally cadmium telluride is dispersed in caddy methanol solution, is sprayed on base material and carries out obtaining the CdTe nano photovoltaic materials that adulterate after annealing reaction.Doping CdTe nano photovoltaics material prepared by the present invention is stable by the way of solute doping to be doped into chlorion and cadmium ion in film, and uniform in effect of adulterating, performance is stable.
Description
Technical field
The invention belongs to photovoltaic material technical field, and in particular to a kind of preparation side of doping CdTe nano photovoltaic materials
Method.
Background technology
Photovoltaic material is also known as solar cell material, refers to solar energy can be directly changed into the material of electric energy.Only partly lead
Body material has this function.Can do the material of solar cell material have monocrystalline silicon, polysilicon, non-crystalline silicon, GaAs, GaAlAs,
InP, CdS, CdTe etc..There are monocrystalline silicon, GaAs, InP for space.There are monocrystalline silicon, polycrystalline for what ground had been produced in batches
Silicon, non-crystalline silicon.Other are still in the development phase.Reduction material cost is directed at present and conversion efficiency is improved, and makes solar cell
Power price and thermal power generation power price compete so that for more extensively more large-scale application create conditions.However, such
Material still needs raising electricity conversion, wherein, doping is the emphasis direction studied at present.
The content of the invention
It is an object of the invention to provide doping prepared by a kind of preparation method of doping CdTe nano photovoltaic materials, the present invention
CdTe nano photovoltaics material is stable by the way of solute doping to be doped into chlorion and cadmium ion in film, effect of adulterating
Uniformly, performance is stable.
The present invention technical purpose technical scheme is that：One kind doping CdTe nano photovoltaic materials
Preparation method, its step is as follows：
Step 1, tellurium powder is put into absolute ethyl alcohol, adds polyvinylpyrrolidone, ultrasonic agitation forms finely dispersed suspended
Alcohol liquid；
Step 2, caddy is added to the water, suspended alcohol liquid is slowly added dropwise after stirring and dissolving, until stirring completely, decompression is steamed
Evaporate to ethanol and exclude completely, obtain the suspended aqueous solution；
Step 3, the suspended aqueous solution is put into reactor, then pass to ammonia carry out cyclic aeration reaction 2-5h, natural cooling,
Obtain being coordinated suspension；
Step 4, coordination suspension is subjected to chlorine aerated reaction 3-5h, then constant pressure back flow reaction 5-8h, after cold filtration
To sediment；
Step 5, sediment is put into caddy methanol solution, substrate surface is sprayed to after stirring, then carried out at annealing
3h is managed, the CdTe nano photovoltaic materials that adulterate are obtained after cooling.
Tellurium powder concentration in the step 1 is 20-30mg/L, and the addition of the polyvinylpyrrolidone is tellurium powder mole
The 5-8% of amount, the frequency of the ultrasonic agitation is 5-10kHz, and the ultrasonic agitation time is 10-30min；The step is by tellurium powder
It is dissolved in absolute ethyl alcohol, and is aided with polyvinylpyrrolidone as dispersant, tellurium powder is evenly distributed in solution, forms steady
Fixed suspended alcohol liquid.
Caddy addition in the step 2 is 1.1-1.2 times of tellurium powder mole, and the addition of the water is anhydrous
The 0.3-0.5 of ethanol, the speed being slowly added dropwise is 4-8mL/min；The step is by the way of being slowly added dropwise by tellurium powder alcohol
Liquid is added into absolute ethyl alcohol, utilizes the intersolubility of ethanol and water, it is ensured that the tellurium powder of polyvinylpyrrolidone parcel is dispersed to water
In, form stable aqueous phase suspension solution.
The temperature of vacuum distillation in the step 2 is 80-90 DEG C, and the pressure of the vacuum distillation is the 50- of atmospheric pressure
60%, the vacuum distillation time is 2-3h, and the volume of the vacuum distillation is the 40-50% of original volume, and the step is steamed in decompression
Under conditions of evaporating, by absolute ethyl alcohol evaporating completely, the aqueous solution is converted into, while ensure that the dispersion effect of tellurium powder.
Ammonia addition in the step 3 is 1.5-1.7 times of tellurium powder mole, and the aeration flow velocity is 10-15mL/
Min, the aerated reaction temperature is 60-70 DEG C；The step by cadmium ion and ammonium ion formation complexation reaction, play fixed cadmium from
The effect of son.
The intake of chlorine in the step 4 is 1.8-2.2 times of tellurium powder, and the temperature of the chlorine aerated reaction is
60-100 DEG C, the aeration flow velocity is 5-8mL/min, and the pressure of the constant pressure back flow reaction is atmospheric pressure, and the temperature is
100-110 DEG C, the backflow uses water cooling；The step reacts tellurium powder by way of chlorine cyclic aeration reacts, and is formed
Stable ionic condition, and react to form cadmium telluride in the cadmium ion of coordination, and formed in water in precipitation, the step using perseverance
The volatile impurity such as hydrogen chloride can be removed by pushing back the mode of stream, obtain relatively stable cadmium telluride, and in polyvinyl pyrrole
The effect of alkanone forms good dispersion effect；Using more chlorine as reducing agent in the step, and to be aerated as anti-
Mode is answered, the reaction speed and reaction depth of tellurium powder is substantially increased, it is ensured that the complete reaction of tellurium powder.
The chlorine aerated reaction is reacted using gradient, i.e., 60-65 DEG C sustained response 0.5-1h, 80-90 DEG C of reaction 0.5h,
100 DEG C of reactions can carry out tellurium powder course of reaction by the way of gradient is reacted detailed-oriented to terminating, and pass through 60-65 DEG C of bar
Tellurium powder is converted into tellurium ion by the aerated reaction under part, under the conditions of 80-90 DEG C, and aerated reaction promotes the mixing effect of internal solution
Really, the reaction for substantially increasing cadmium telluride is produced, scattered to cadmium telluride product formation aeration under the conditions of last 100 DEG C, is played
Good dispersion effect, while promoting the dispersion effect of polyvinylpyrrolidone effectively to act on to particle surface.
The concentration of caddy methanol solution is 10-15mg/L in the step 5, and the mixing speed is 1500-2000r/
Min, the step is formed using caddy formalin as doped solution and is effectively dispersed to precipitation surface, is formed relatively stable
Suspended state.
Fountain height in the step 5 is 2-4mg/cm2, the annealing temperature is 400-450 DEG C, and the annealing reaction is adopted
Annealing reaction is protected with nitrogen, the annealing reaction uses Gradient annealing method, i.e., 1-2h reacted under the conditions of 200-250 DEG C, so
Continue afterwards in 350 DEG C of reactions, until reaction reacts 0.5h before terminating under the conditions of 400-450 DEG C.The step is used as painting to spray
Metal ion and Doped ions in solution effectively can be stayed in substrate surface by the mode of covering, under the conditions of Gradient annealing, first
By the impurity complete oxidation such as polyvinylpyrrolidone, then under high annealing under a nitrogen atmosphere, by chlorion and cadmium ion
It is doped into cadmium telluride, forms stable doping effect, effectively raise its electricity conversion.
The present invention prepares suspended alcohol liquid using tellurium powder as raw material, and is mixed with the aqueous solution dropwise addition of caddy, vacuum distillation
After form the suspended aqueous solution；Then ammonia is carried out to the suspended aqueous solution and takes reaction and aerated reaction in one's arms, in constant pressure back flow reaction bar
Cadmium telluride precipitation is obtained under part, finally cadmium telluride is dispersed in caddy methanol solution, is sprayed on base material and carries out annealing reaction
After obtain adulterate CdTe nano photovoltaic materials.
In summary, the present invention has the advantages that：
Preparation method simple possible of the present invention, practicality and highly versatile.Doping CdTe nano photovoltaic materials prepared by the present invention
Stable by the way of solute doping that chlorion and cadmium ion are doped into film, uniform in effect of adulterating, performance is stable.This
Photovoltaic material prepared by invention effectively raises photoelectricity conduction efficiency, effectively raises the conduction velocity of inside.The present invention
The preparation method of offer is simple and quick, while its optoelectronic transformation efficiency can reach commercialization standard.
Embodiment
Embodiment 1
A kind of preparation method of doping CdTe nano photovoltaic materials, its step is as follows：
Step 1, tellurium powder is put into absolute ethyl alcohol, adds polyvinylpyrrolidone, ultrasonic agitation forms finely dispersed suspended
Alcohol liquid；
Step 2, caddy is added to the water, suspended alcohol liquid is slowly added dropwise after stirring and dissolving, until stirring completely, decompression is steamed
Evaporate to ethanol and exclude completely, obtain the suspended aqueous solution；
Step 3, the suspended aqueous solution is put into reactor, then passes to ammonia and carry out cyclic aeration reaction 2h, natural cooling is obtained
To coordination suspension；
Step 4, coordination suspension is subjected to chlorine aerated reaction 3h, then constant pressure back flow reaction 5h, sunk after cold filtration
Starch；
Step 5, sediment is put into caddy methanol solution, substrate surface is sprayed to after stirring, then carried out at annealing
3h is managed, the CdTe nano photovoltaic materials that adulterate are obtained after cooling.
Tellurium powder concentration in the step 1 is 20mg/L, and the addition of the polyvinylpyrrolidone is tellurium powder mole
5%, the frequency of the ultrasonic agitation is 5kHz, and the ultrasonic agitation time is 10min.
Caddy addition in the step 2 is 1.1 times of tellurium powder mole, and the addition of the water is absolute ethyl alcohol
0.3, the speed being slowly added dropwise is 4mL/min.
The temperature of vacuum distillation in the step 2 is 80 DEG C, and the pressure of the vacuum distillation is the 50% of atmospheric pressure, institute
The vacuum distillation time is stated for 2h, the volume of the vacuum distillation is the 40% of original volume.
Ammonia addition in the step 3 is 1.5 times of tellurium powder mole, and the aeration flow velocity is 10mL/min, described
Aerated reaction temperature is 60 DEG C.
The intake of chlorine in the step 4 is 1.8 times of tellurium powder, and the temperature of the chlorine aerated reaction is 60 DEG C,
The aeration flow velocity is 5mL/min, and the pressure of the constant pressure back flow reaction is atmospheric pressure, and the temperature is 100 DEG C, the backflow
Using water cooling.
The concentration of caddy methanol solution is 10mg/L in the step 5, and the mixing speed is 1500r/min.
Fountain height in the step 5 is 2mg/cm2, the annealing temperature is 400 DEG C, and the annealing reaction uses nitrogen
Annealing reaction is protected, the annealing reaction uses Gradient annealing method, i.e., 1h is reacted under the conditions of 200 DEG C, then continues at 350 DEG C
Reaction, until reaction reacts 0.5h before terminating under the conditions of 400 DEG C.
One block of FTO glass is selected, is cleaned up and is further dried, screen printing is used on its backward FTO glass
Brush method prints one layer of TiO2Film layer, in the compacted zone for obtaining being carried on FTO glass after heating 25min at 500 DEG C, the densification
Thickness degree is 50nm, photovoltaic material dissolving will be spun on as made from embodiment 1 on compacted zone thereafter, and in heating 10 at 80 DEG C
The coating that minute makes the photovoltaic material form 30nm, which is affixed on compacted zone, forms light-absorption layer, then will pass through silk screen to electrode slurry
Print process is printed on the light-absorption layer, and dry 10min is placed in 80 DEG C of baking ovens after levelling and obtains solar cell,
Used in battery performance test, experimentation in 100mW/cm2 Solar simulator (Newport) AM1.5G
Carried out under illumination, it is 20.11% to measure optoelectronic transformation efficiency.After being kept for 20 days during 20 degrees Celsius of temperature, humidity is 45% environment,
It is 18.8% to test its transformation efficiency.
Embodiment 2
A kind of preparation method of doping CdTe nano photovoltaic materials, its step is as follows：
Step 1, tellurium powder is put into absolute ethyl alcohol, adds polyvinylpyrrolidone, ultrasonic agitation forms finely dispersed suspended
Alcohol liquid；
Step 2, caddy is added to the water, suspended alcohol liquid is slowly added dropwise after stirring and dissolving, until stirring completely, decompression is steamed
Evaporate to ethanol and exclude completely, obtain the suspended aqueous solution；
Step 3, the suspended aqueous solution is put into reactor, then passes to ammonia and carry out cyclic aeration reaction 5h, natural cooling is obtained
To coordination suspension；
Step 4, coordination suspension is subjected to chlorine aerated reaction 5h, then constant pressure back flow reaction 8h, sunk after cold filtration
Starch；
Step 5, sediment is put into caddy methanol solution, substrate surface is sprayed to after stirring, then carried out at annealing
3h is managed, the CdTe nano photovoltaic materials that adulterate are obtained after cooling.
Tellurium powder concentration in the step 1 is 30mg/L, and the addition of the polyvinylpyrrolidone is tellurium powder mole
8%, the frequency of the ultrasonic agitation is 10kHz, and the ultrasonic agitation time is 30min.
Caddy addition in the step 2 is 1.2 times of tellurium powder mole, and the addition of the water is absolute ethyl alcohol
0.5, the speed being slowly added dropwise is 8mL/min.
The temperature of vacuum distillation in the step 2 is 90 DEG C, and the pressure of the vacuum distillation is the 60% of atmospheric pressure, institute
The vacuum distillation time is stated for 3h, the volume of the vacuum distillation is the 50% of original volume.
Ammonia addition in the step 3 is 1.7 times of tellurium powder mole, and the aeration flow velocity is 15mL/min, described
Aerated reaction temperature is 70 DEG C.
The intake of chlorine in the step 4 is 2.2 times of tellurium powder, and the temperature of the chlorine aerated reaction is 100 DEG C,
The aeration flow velocity is 8mL/min, and the pressure of the constant pressure back flow reaction is atmospheric pressure, and the temperature is 110 DEG C, the backflow
Using water cooling.
The concentration of caddy methanol solution is 15mg/L in the step 5, and the mixing speed is 2000r/min.
Fountain height in the step 5 is 4mg/cm2, the annealing temperature is 450 DEG C, and the annealing reaction uses nitrogen
Annealing reaction is protected, the annealing reaction uses Gradient annealing method, i.e., 2h is reacted under the conditions of 250 DEG C, then continues at 350 DEG C
Reaction, until reaction reacts 0.5h before terminating under the conditions of 450 DEG C.
One block of FTO glass is selected, is cleaned up and is further dried, screen printing is used on its backward FTO glass
Brush method prints one layer of TiO2Film layer, in the compacted zone for obtaining being carried on FTO glass after heating 25min at 500 DEG C, the densification
Thickness degree is 50nm, and the photovoltaic material as made from embodiment 2 is spun on compacted zone thereafter, and in heating 10 minutes at 80 DEG C
Photovoltaic material formation 30nm coating is affixed on compacted zone and form light-absorption layer, then silk-screen printing will be passed through to electrode slurry
Method is printed on the light-absorption layer, and dry 10min is placed in 80 DEG C of baking ovens after levelling and obtains solar cell,
Used in battery performance test, experimentation in 100mW/cm2 Solar simulator (Newport) AM1.5G
Carried out under illumination, it is 19.72% to measure optoelectronic transformation efficiency.After being kept for 20 days during 20 degrees Celsius of temperature, humidity is 45% environment,
It is 17.32% to test its transformation efficiency.
Embodiment 3
A kind of preparation method of doping CdTe nano photovoltaic materials, its step is as follows：
Step 1, tellurium powder is put into absolute ethyl alcohol, adds polyvinylpyrrolidone, ultrasonic agitation forms finely dispersed suspended
Alcohol liquid；
Step 2, caddy is added to the water, suspended alcohol liquid is slowly added dropwise after stirring and dissolving, until stirring completely, decompression is steamed
Evaporate to ethanol and exclude completely, obtain the suspended aqueous solution；
Step 3, the suspended aqueous solution is put into reactor, then passes to ammonia and carry out cyclic aeration reaction 3h, natural cooling is obtained
To coordination suspension；
Step 4, coordination suspension is subjected to chlorine aerated reaction 4h, then constant pressure back flow reaction 6h, sunk after cold filtration
Starch；
Step 5, sediment is put into caddy methanol solution, substrate surface is sprayed to after stirring, then carried out at annealing
3h is managed, the CdTe nano photovoltaic materials that adulterate are obtained after cooling.
Tellurium powder concentration in the step 1 is 25mg/L, and the addition of the polyvinylpyrrolidone is tellurium powder mole
6%, the frequency of the ultrasonic agitation is 7kHz, and the ultrasonic agitation time is 20min.
Caddy addition in the step 2 is 1.1 times of tellurium powder mole, and the addition of the water is absolute ethyl alcohol
0.4, the speed being slowly added dropwise is 6mL/min.
The temperature of vacuum distillation in the step 2 is 85 DEG C, and the pressure of the vacuum distillation is the 55% of atmospheric pressure, institute
The vacuum distillation time is stated for 2h, the volume of the vacuum distillation is the 45% of original volume.
Ammonia addition in the step 3 is 1.6 times of tellurium powder mole, and the aeration flow velocity is 12mL/min, described
Aerated reaction temperature is 65 DEG C.
The intake of chlorine in the step 4 is 2.0 times of tellurium powder, and the temperature of the chlorine aerated reaction is 80 DEG C,
The aeration flow velocity is 6mL/min, and the pressure of the constant pressure back flow reaction is atmospheric pressure, and the temperature is 105 DEG C, the backflow
Using water cooling.
The concentration of caddy methanol solution is 13mg/L in the step 5, and the mixing speed is 1800r/min.
Fountain height in the step 5 is 3mg/cm2, the annealing temperature is 430 DEG C, and the annealing reaction uses nitrogen
Annealing reaction is protected, the annealing reaction uses Gradient annealing method, i.e., 2h is reacted under the conditions of 230 DEG C, then continues at 350 DEG C
Reaction, until reaction reacts 0.5h before terminating under the conditions of 430 DEG C.
One block of FTO glass is selected, is cleaned up and is further dried, screen printing is used on its backward FTO glass
Brush method prints one layer of TiO2Film layer, in the compacted zone for obtaining being carried on FTO glass after heating 25min at 500 DEG C, the densification
Thickness degree is 50nm, photovoltaic material dissolving will be spun on as made from embodiment 3 on compacted zone thereafter, and in heating 10 at 80 DEG C
The coating that minute makes the photovoltaic material form 30nm, which is affixed on compacted zone, forms light-absorption layer, then will pass through screen printing to electrode slurry
Brush method is printed on the light-absorption layer, and dry 10min is placed in 80 DEG C of baking ovens after levelling and obtains solar cell,
Used in battery performance test, experimentation in 100mW/cm2 Solar simulator (Newport) AM1.5G
Carried out under illumination, it is 20.41% to measure optoelectronic transformation efficiency.After being kept for 20 days during 20 degrees Celsius of temperature, humidity is 45% environment,
It is 19.12% to test its transformation efficiency.
Embodiment 4
A kind of preparation method of doping CdTe nano photovoltaic materials, its step is as follows：
Step 1, tellurium powder is put into absolute ethyl alcohol, adds polyvinylpyrrolidone, ultrasonic agitation forms finely dispersed suspended
Alcohol liquid；
Step 2, caddy is added to the water, suspended alcohol liquid is slowly added dropwise after stirring and dissolving, until stirring completely, decompression is steamed
Evaporate to ethanol and exclude completely, obtain the suspended aqueous solution；
Step 3, the suspended aqueous solution is put into reactor, then passes to ammonia and carry out cyclic aeration reaction 4h, natural cooling is obtained
To coordination suspension；
Step 4, coordination suspension is subjected to chlorine aerated reaction 4h, then constant pressure back flow reaction 7h, sunk after cold filtration
Starch；
Step 5, sediment is put into caddy methanol solution, substrate surface is sprayed to after stirring, then carried out at annealing
3h is managed, the CdTe nano photovoltaic materials that adulterate are obtained after cooling.
Tellurium powder concentration in the step 1 is 28mg/L, and the addition of the polyvinylpyrrolidone is tellurium powder mole
7%, the frequency of the ultrasonic agitation is 8kHz, and the ultrasonic agitation time is 25min.
Caddy addition in the step 2 is 1.2 times of tellurium powder mole, and the addition of the water is absolute ethyl alcohol
0.4, the speed being slowly added dropwise is 7mL/min.
The temperature of vacuum distillation in the step 2 is 86 DEG C, and the pressure of the vacuum distillation is the 57% of atmospheric pressure, institute
The vacuum distillation time is stated for 3h, the volume of the vacuum distillation is the 45% of original volume.
Ammonia addition in the step 3 is 1.6 times of tellurium powder mole, and the aeration flow velocity is 14mL/min, described
Aerated reaction temperature is 65 DEG C.
The intake of chlorine in the step 4 is 2.1 times of tellurium powder, and the aeration flow velocity is 7mL/min, the constant pressure
The pressure of back flow reaction is atmospheric pressure, and the temperature is 108 DEG C, and the backflow uses water cooling.
The chlorine aerated reaction is reacted using gradient, i.e., 63 DEG C sustained responses 0.7h, 85 DEG C of reaction 0.5h, and 100 DEG C anti-
Should be to terminating.
The concentration of caddy methanol solution is 14mg/L in the step 5, and the mixing speed is 1700r/min.
Fountain height in the step 5 is 3mg/cm2, the annealing temperature is 440 DEG C, and the annealing reaction uses nitrogen
Annealing reaction is protected, the annealing reaction uses Gradient annealing method, i.e., 2h is reacted under the conditions of 220 DEG C, then continues at 350 DEG C
Reaction, until reaction reacts 0.5h before terminating under the conditions of 440 DEG C.
One block of FTO glass is selected, is cleaned up and is further dried, screen printing is used on its backward FTO glass
Brush method prints one layer of TiO2Film layer, in the compacted zone for obtaining being carried on FTO glass after heating 25min at 500 DEG C, the densification
Thickness degree is 50nm, photovoltaic material dissolving will be spun on as made from embodiment 4 on compacted zone thereafter, and in heating 10 at 80 DEG C
The coating that minute makes the photovoltaic material form 30nm, which is affixed on compacted zone, forms light-absorption layer, then will pass through screen printing to electrode slurry
Brush method is printed on the light-absorption layer, and dry 10min is placed in 80 DEG C of baking ovens after levelling and obtains solar cell,
Used in battery performance test, experimentation in 100mW/cm2 Solar simulator (Newport) AM1.5G
Carried out under illumination, it is 22.37% to measure optoelectronic transformation efficiency.After being kept for 20 days during 20 degrees Celsius of temperature, humidity is 45% environment,
It is 20.07% to test its transformation efficiency.
One embodiment of the invention is the foregoing is only, the present invention, all use equivalent substitutions or equivalent transformation is not intended to limit
The technical scheme that is obtained of mode, all fall within protection scope of the present invention.
Claims (9)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130680A (en) * | 2021-04-14 | 2021-07-16 | 宁波大学 | CdCl2Doped all-inorganic perovskite solar cell and preparation method thereof |
| CN114005905A (en) * | 2021-10-22 | 2022-02-01 | 成都中建材光电材料有限公司 | Continuous production equipment for cadmium telluride solar cell |
| CN117585649A (en) * | 2024-01-19 | 2024-02-23 | 广州市尤特新材料有限公司 | Preparation method of cadmium telluride target with excellent photoelectric property and cadmium telluride film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142481A (en) * | 2009-12-16 | 2011-08-03 | 通用电气公司 | Method of P-type doping of cadmium telluride |
| CN102169090A (en) * | 2011-01-13 | 2011-08-31 | 武汉大学 | Method for preparing quantum dot marked catalase fluorescent probe |
| CN103043631A (en) * | 2013-01-16 | 2013-04-17 | 四川大学 | Method for preparing cadmium telluride powder by liquid phase reduction and hydrogen treatment |
-
2017
- 2017-06-15 CN CN201710452467.3A patent/CN107104158B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142481A (en) * | 2009-12-16 | 2011-08-03 | 通用电气公司 | Method of P-type doping of cadmium telluride |
| US20140248738A1 (en) * | 2009-12-16 | 2014-09-04 | First Solar, Inc. | Method of P-Type Doping of Cadmium Telluride |
| CN102169090A (en) * | 2011-01-13 | 2011-08-31 | 武汉大学 | Method for preparing quantum dot marked catalase fluorescent probe |
| CN103043631A (en) * | 2013-01-16 | 2013-04-17 | 四川大学 | Method for preparing cadmium telluride powder by liquid phase reduction and hydrogen treatment |
Non-Patent Citations (1)
| Title |
|---|
| P.R.EDWARDS: ""A comparative EBIC study of CdTe solar cell activation using CdCl2 and Cl2"", 《THIN SOLID FILMS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130680A (en) * | 2021-04-14 | 2021-07-16 | 宁波大学 | CdCl2Doped all-inorganic perovskite solar cell and preparation method thereof |
| CN114005905A (en) * | 2021-10-22 | 2022-02-01 | 成都中建材光电材料有限公司 | Continuous production equipment for cadmium telluride solar cell |
| CN114005905B (en) * | 2021-10-22 | 2023-10-17 | 成都中建材光电材料有限公司 | A continuous production equipment for cadmium telluride solar cells |
| CN117585649A (en) * | 2024-01-19 | 2024-02-23 | 广州市尤特新材料有限公司 | Preparation method of cadmium telluride target with excellent photoelectric property and cadmium telluride film |
| CN117585649B (en) * | 2024-01-19 | 2024-03-26 | 广州市尤特新材料有限公司 | Preparation method of cadmium telluride target with excellent photoelectric property and cadmium telluride film |
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