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CN107097012A - A kind of crystal grain is orientated consistent banjo fixing butt jointing electro-migration testing method - Google Patents

A kind of crystal grain is orientated consistent banjo fixing butt jointing electro-migration testing method Download PDF

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CN107097012A
CN107097012A CN201710313851.5A CN201710313851A CN107097012A CN 107097012 A CN107097012 A CN 107097012A CN 201710313851 A CN201710313851 A CN 201710313851A CN 107097012 A CN107097012 A CN 107097012A
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solder
fixing butt
banjo fixing
butt jointing
consistent
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CN107097012B (en
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汉晶
郭福
刘建萍
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Beijing University of Technology
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/12Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to investigating the properties, e.g. the weldability, of materials
    • B23K31/125Weld quality monitoring

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  • Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Mechanical Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

一种晶粒取向一致的对接接头电迁移测试方法,属于材料制备与连接领域。将两个焊盘之间采用钎料焊膏重熔焊接成钎料接头,钎料对接接头采用环氧树脂粘附于基板上,钎料接头至少有一个侧面表面作为钎料对接接头截面,选取在PLM下呈现单一晶粒取向的钎焊对接接头;对接单晶接头进行线切割,进行精抛,获取EBSD数据,确定钎焊对接接头晶粒c轴与电流方向的夹角,借助环氧树脂钎料接头粘附于基板上,进行相关的测试。在单晶焊点晶粒c轴与电流方向夹角一致的前提下获得具备可比性的焊点可靠性评价。

The invention discloses a butt joint electromigration test method with consistent grain orientation, which belongs to the field of material preparation and connection. The two pads are remelted with solder paste to form a solder joint. The solder butt joint is adhered to the substrate with epoxy resin. At least one side surface of the solder joint is used as the cross section of the solder joint. Select Brazed butt joints with a single grain orientation under PLM; butt single crystal joints are wire-cut and finely polished to obtain EBSD data to determine the angle between the c-axis of the brazed butt joint grains and the current direction, with the help of epoxy resin Solder joints are adhered to the substrate for the relevant tests. On the premise that the angle between the c-axis of the single crystal solder joint grain and the current direction is consistent, a comparable solder joint reliability evaluation is obtained.

Description

一种晶粒取向一致的对接接头电迁移测试方法A method for electromigration testing of butt joints with consistent grain orientation

技术领域technical field

本发明为一种晶粒取向一致的对接接头电迁移测试方法,属于材料制备与连接领域,适用于制备晶粒取向一致的微型钎焊对接接头,应用于电迁移可靠性研究。该方法可以有效保证微型对接接头的尺寸和晶粒取向一致性,进而保证钎焊对接接头的电迁移可靠性测试数据的可比性。The invention relates to an electromigration test method for a butt joint with consistent grain orientation, which belongs to the field of material preparation and connection, is suitable for preparing micro-brazed butt joints with consistent grain orientation, and is applied to electromigration reliability research. The method can effectively ensure the consistency of the size and grain orientation of the micro-butt joints, thereby ensuring the comparability of the electromigration reliability test data of the brazed butt joints.

背景技术Background technique

焊点是微电子互连中不可或缺的组成部分,起到了机械连接和电信号传输的作用。目前,微电子封装空间减小,芯片产热加剧,一方面,在焊点形成或电子产品使用过程中钎料与焊盘金属化层之间反应所生成的界面金属间化合物(Intermetallic Compounds,IMCs)层占整个焊点的比重不断增加,其形貌、尺寸、晶体取向以及厚度等对焊点可靠性的影响也愈发严重,另一方面,焊点所承受的电流密度不断增加,在热力学与动力学因素的驱使下,重熔过程中液态钎料润湿于固态焊盘上形成的IMCs会生长或溶解,造成焊点的失效,焊点的可靠性很大程度上决定了整个电子产品的可靠性和寿命。因此,如何控制界面IMCs的反应行为就显得尤为重要,这就需要首先明确焊点形成及服役过程中的界面反应机理。Solder joints are an integral part of microelectronic interconnection, playing the role of mechanical connection and electrical signal transmission. At present, the microelectronic packaging space is reduced, and the heat generation of the chip is intensified. On the one hand, the intermetallic compounds (Intermetallic Compounds, IMCs) generated by the reaction between the solder and the pad metallization layer during the formation of solder joints or the use of electronic products ) layer accounts for an increasing proportion of the entire solder joint, and its shape, size, crystal orientation, and thickness have an increasingly serious impact on the reliability of the solder joint. On the other hand, the current density borne by the solder joint continues to increase. Driven by kinetic factors, the IMCs formed by the liquid solder wetting on the solid pad during the remelting process will grow or dissolve, resulting in the failure of the solder joint. The reliability of the solder joint largely determines the entire electronic product. reliability and lifespan. Therefore, how to control the reaction behavior of IMCs at the interface is particularly important, which requires clarifying the interface reaction mechanism during solder joint formation and service.

已有研究表明,重熔制备的Sn基无铅互连焊点往往呈现单晶或孪晶结构,而β-Sn的BCT晶体结构具有各向异性(a=0.5832,c=0.3182,c/a=0.546),Cu等原子在焊点中的扩散会由于β-Sn不同的晶粒取向而呈现出强烈的各向异性,比如,在25℃,Cu沿β-Sn晶格c轴的扩散速率为2×10-6cm2/s,是其沿a、b轴扩散速率的500倍,这种取向扩散行为将会对焊点的电迁移行为造成严重影响,具有c轴与电流方向平行的Sn-Ag或者Sn-Ag-Cu钎料单晶焊点容易产生提前失效,其界面IMCs的生长速度约为具有c轴与电流方向垂直的单晶焊点或孪晶焊点的10倍。目前,深刻理解并预测Sn枝晶的生长模式是一个热力学难题,在完成互连后,每一个焊点都具有独特的晶体取向,因此不可避免的会有一些焊点由于β-Sn晶粒的取向不利,在电子产品使用过程中提前失效,进而降低电子产品的使用寿命。可见,焊点的晶粒取向会严重影响其服役可靠性,因此,寻找一个合适的手段,获取具有相同晶粒取向的单晶焊点,进行其界面IMCs重熔状态表征、时效过程界面IMCs演变行为以及电迁移过程中界面IMCs演变行为的研究,必将极大程度上提高对焊点界面反应行为的认识水平。Studies have shown that Sn-based lead-free interconnect solder joints prepared by remelting often exhibit single crystal or twin crystal structure, while the BCT crystal structure of β-Sn is anisotropic (a=0.5832, c=0.3182, c/a =0.546), the diffusion of Cu and other atoms in the solder joint will show strong anisotropy due to the different grain orientations of β-Sn, for example, at 25 °C, the diffusion rate of Cu along the c-axis of β-Sn lattice It is 2×10 -6 cm 2 /s, which is 500 times of its diffusion rate along the a and b axes. This orientational diffusion behavior will have a serious impact on the electromigration behavior of solder joints, and has a c-axis parallel to the current direction. Sn-Ag or Sn-Ag-Cu solder single crystal solder joints are prone to premature failure, and the growth rate of IMCs at the interface is about 10 times that of single crystal solder joints or twin crystal solder joints with c-axis perpendicular to the current direction. At present, it is a thermodynamic problem to deeply understand and predict the growth mode of Sn dendrites. After the interconnection is completed, each solder joint has a unique crystal orientation, so it is inevitable that there will be some solder joints due to the growth of β-Sn grains. The orientation is unfavorable, and it will fail early during the use of electronic products, thereby reducing the service life of electronic products. It can be seen that the grain orientation of solder joints will seriously affect its service reliability. Therefore, it is necessary to find a suitable method to obtain single crystal solder joints with the same grain orientation, and to perform the characterization of the remelting state of the interface IMCs and the evolution of the interface IMCs during the aging process. The research on the behavior and the evolution behavior of interfacial IMCs during the electromigration process will greatly improve the understanding level of the interfacial reaction behavior of solder joints.

发明内容Contents of the invention

本发明的目的是克服微型钎焊对接接头晶粒取向不可调控的特点,制作出焊点尺寸可控,晶粒取向一致的钎焊对接接头。同时期望可以通过进行取向一致的对接单晶焊点的重熔状态、时效过程和电迁移过程中界面IMCs演变行为的表征,在焊点晶体取向一致的前提下,得到对应c轴与电流方向夹角的一系列可靠性数据,最终达到深入理解钎焊对接接头电迁移可靠性的目的。The purpose of the invention is to overcome the characteristic that the crystal grain orientation of the miniature brazed butt joint cannot be controlled, and produce a brazed butt joint with controllable solder joint size and consistent crystal grain orientation. At the same time, it is expected that by characterizing the remelting state of the butt single crystal solder joints with the same orientation, the aging process and the evolution behavior of the interface IMCs during the electromigration process, on the premise that the crystal orientation of the solder joints is consistent, the corresponding c-axis and current direction can be obtained. A series of reliability data of angle, and finally achieve the purpose of in-depth understanding of electromigration reliability of brazed butt joints.

为了达到上述目的,本发明采用了如下技术方案。In order to achieve the above object, the present invention adopts the following technical solutions.

一种晶粒取向一致的对接接头电迁移测试方法,其特征在于,包括以下步骤:A butt joint electromigration test method with consistent grain orientation, characterized in that it comprises the following steps:

(1)、去除焊盘表面的氧化物和有机污染物,在基板上粘附双面胶,并将两个焊盘置于基板上,保证两焊盘的焊接面平行,并有一定的间距,以保证焊缝尺寸和宽度一致性,焊接面垂直基板;(1) Remove oxides and organic pollutants on the surface of the pads, stick double-sided adhesive on the substrate, and place the two pads on the substrate to ensure that the welding surfaces of the two pads are parallel and have a certain distance , to ensure the consistency of weld size and width, and the welding surface is perpendicular to the substrate;

(2)、将选用的钎料焊膏涂敷于两个焊盘的焊接面之间,进行重熔,然后冷却,得到相应的钎料对接接头;将钎料对接接头连同基板一起置于丙酮溶液中,以将钎料对接接头从基板上取下,得到具有一定晶粒取向的重熔制备的钎焊对接接头,不经镶嵌,直接研磨,以去除多余钎料,并对钎焊对接接头的可作为截面的表面进行抛光;(2), apply the selected solder paste between the welding surfaces of the two pads, remelt, and then cool to obtain the corresponding solder butt joint; place the solder butt joint together with the substrate in acetone In the solution, the solder butt joint is removed from the substrate to obtain a brazed butt joint prepared by remelting with a certain grain orientation, and it is directly ground without inlaying to remove excess solder, and the brazed butt joint The surface that can be used as a section can be polished;

(3)、通过正交偏振光学显微镜(Polarized light microscopy,PLM)观察抛光了的钎焊对接接头表面截面,区分不同晶体取向的β-Sn晶粒,选取在PLM下呈现单一晶粒取向的钎焊对接接头;(3) Observing the surface cross-section of the polished butt joint by Polarized light microscopy (PLM), distinguishing the β-Sn grains with different crystal orientations, and selecting the solder that exhibits a single grain orientation under PLM. Welded butt joints;

由于β-Sn具有各向异性的BCT晶体结构,光束入射到抛光的β-Sn晶体表面时,会分解为两束光而沿不同方向折射而发生双折射现象。由于不同取向的晶粒在正交偏振光学显微镜(Polarized light microscopy,PLM)下对比度显著不同,因此通过PLM观察抛光了的钎焊对接接头截面,可以区分不同晶体取向的β-Sn晶粒,选取在PLM下呈现单一晶粒取向的钎焊对接接头;Due to the anisotropic BCT crystal structure of β-Sn, when the light beam is incident on the surface of the polished β-Sn crystal, it will be decomposed into two beams of light and refracted in different directions to cause birefringence. Since the contrast of grains with different orientations is significantly different under Polarized light microscopy (PLM), the β-Sn grains with different crystal orientations can be distinguished by observing the cross-section of the polished brazed butt joint through PLM. Brazed butt joints exhibiting a single grain orientation under PLM;

(4)、将通过PLM观察所得的钎料对接单晶接头进行线切割,得到与步骤(2)重熔制备的钎焊对接接头具有相同晶粒取向的多个微型钎焊对接接头,对得到的微型钎焊对接接头进行精抛,获取电子背散射衍射(Electron Backscattered Diffraction,EBSD)数据,确定钎焊对接接头晶粒c轴与电流方向的夹角;(4), wire-cut the solder butt joint single crystal joint obtained by PLM observation, and obtain a plurality of micro-solder butt joints with the same grain orientation as the brazed butt joint prepared by remelting in step (2), to obtain Finely polish the micro-brazed butt joints, obtain Electron Backscattered Diffraction (EBSD) data, and determine the angle between the c-axis of the brazed butt joint grains and the current direction;

(5)、借助环氧树脂将步骤(4)进行线切割得到的钎料接头粘附于基板上,并进行指定截面的研磨抛光,最终得到可用于进行电迁移测试的钎焊对接接头,并进行焊点横截面和俯视方向IMCs演变行为分析;(5) Adhere the solder joint obtained by wire cutting in step (4) to the substrate with the aid of epoxy resin, and perform grinding and polishing of a specified section to finally obtain a brazed butt joint that can be used for electromigration testing, and Analyze the evolution behavior of IMCs in cross-section and top view direction of solder joints;

采用环氧树脂是由于其满足一般钎料焊点电迁移可靠性测试温度要求,同时又可以保证钎料焊点的结构强度;The use of epoxy resin is because it meets the temperature requirements of the electromigration reliability test of general solder solder joints, and at the same time can ensure the structural strength of solder solder joints;

(6)、进行电迁移测试相关的可靠性测试,在钎焊对接接头晶粒取向一致的基础上,得到具备可比性的焊点电迁移可靠性数据。(6) Conduct reliability tests related to electromigration tests, and obtain comparable solder joint electromigration reliability data on the basis of consistent grain orientation of brazed butt joints.

采用线切割进行微型钎焊对接接头的加工;Processing of micro-brazed butt joints by wire cutting;

所述基板能够耐受重熔温度和电迁移温度并且不导电,采用印刷电路板等;The substrate can withstand remelting temperature and electromigration temperature and is non-conductive, using a printed circuit board, etc.;

所述焊盘采用Cu、Cu/Ni/Au,Cu/Cu6Sn5The pads are made of Cu, Cu/Ni/Au, Cu/Cu 6 Sn 5 ;

钎料焊膏为所Sn基的二元合金、三元合金或四元合金;优选是二元合金SnCu系列、SnAg系列、SnZn系列、SnBi系列或SnIn系列,三元合金SnAgCu系列、SnAgBi系列或SnAgIn系列,四元SnAgBiIn系列无铅钎料。The solder solder paste is a Sn-based binary alloy, ternary alloy or quaternary alloy; preferably binary alloy SnCu series, SnAg series, SnZn series, SnBi series or SnIn series, ternary alloy SnAgCu series, SnAgBi series or SnAgIn series, quaternary SnAgBiIn series lead-free solder.

所述步骤(2)中的重熔,温度范围选择200℃到700℃;步骤(2)中的冷却,选择随炉冷却、空冷、风冷、水冷或油冷的冷却方式。For remelting in step (2), the temperature range is from 200°C to 700°C; for cooling in step (2), choose furnace cooling, air cooling, air cooling, water cooling or oil cooling.

步骤(6)中的相关的可靠性测试是重熔制备界面微观组织观察、晶体取向观察和成分分析、时效实验、电迁移实验、电迁移寿命测试。Relevant reliability tests in step (6) are observation of microstructure at remelted preparation interface, observation of crystal orientation and component analysis, aging experiment, electromigration experiment, and electromigration life test.

本发明的优点在于能够控制钎焊对接接头的尺寸,保证对接接头晶体取向一致性;工艺简单,成本低廉;同时获得的对接接头能够满足时效和电迁移测试的各种要求,在c轴与电流方向夹角一致的前提下获得具备可比性的焊点可靠性评价。The invention has the advantages of being able to control the size of the brazed butt joint, ensuring the consistency of the crystal orientation of the butt joint; the process is simple and the cost is low; the butt joint obtained at the same time can meet various requirements of aging and electromigration tests, and the c-axis and current Comparable solder joint reliability evaluations are obtained under the premise that the included angles in the directions are consistent.

附图说明Description of drawings

图1:实施例1线切割获得的微型钎焊对接接头照片Fig. 1: Micro-brazed butt joint photo obtained by wire cutting in embodiment 1

图2:实施例1线切割获得的微型钎焊对接接头取向分布图Figure 2: Micro-brazed butt joint orientation distribution diagram obtained by wire cutting in Example 1

图3:实施例1微型钎焊对接接头电迁移测试结构组成示意图Figure 3: Schematic diagram of the composition of the micro-brazed butt joint electromigration test structure in Example 1

图4:实施例1用于电迁移相关测试的微型钎焊对接接头照片。Figure 4: Photo of micro-brazed butt joints used in electromigration-related tests in Example 1.

具体的实施方式specific implementation

下面结合实施例对本发明做进一步说明,但本发明并不限于以下实施例。The present invention will be further described below in conjunction with the examples, but the present invention is not limited to the following examples.

实施例1Example 1

以下内容结合图1、2和4具体阐述本发明的实施方式。钎料焊膏一般保存在冰箱中,需要提前4-8h从冰箱取出放在室温环境中以恢复焊膏的粘度,使用之前还需要进行充分搅拌。The following content specifically illustrates the embodiment of the present invention in conjunction with FIGS. 1 , 2 and 4 . Solder solder paste is generally stored in the refrigerator. It needs to be taken out of the refrigerator 4-8 hours in advance and placed at room temperature to restore the viscosity of the solder paste. It needs to be fully stirred before use.

晶粒取向一致的,截面尺寸为300μm×300μm,焊缝宽度为200μm的Cu/Sn3.5Ag/Cu对接单晶接头电迁移性能测试。Electromigration performance test of Cu/Sn3.5Ag/Cu butt single crystal joint with consistent grain orientation, cross-sectional size of 300μm×300μm, and weld width of 200μm.

1、Cu焊盘准备:用线切割方式制作铜焊盘,其尺寸为500μm×10mm×20mm;1. Preparation of Cu pads: Make copper pads by wire cutting, the size of which is 500μm×10mm×20mm;

2、将纯度大于99.99wt.%,尺寸为500μm×10mm×20mm的Cu片放入配制好的30%HNO3水溶液中浸泡几分钟,去除Cu焊盘表面氧化物和污染物,接着将其放入丙酮中进一步超声清洗,清洗完毕烘干备用;2. Put the Cu sheet with a purity greater than 99.99wt.% and a size of 500μm×10mm×20mm into the prepared 30% HNO 3 aqueous solution for a few minutes to remove oxides and pollutants on the surface of the Cu pad, and then place it Put into acetone for further ultrasonic cleaning, after cleaning, dry for subsequent use;

3、在10mm×10mm×1.5mm的印刷电路板(Printed circuit boards,PCB)上粘附双面胶,并将两个Cu焊盘置于其上,间距为200μm,同时注意保证焊盘间距为200μm,并且保证Cu焊盘的平行性;3. Adhere double-sided tape on the 10mm×10mm×1.5mm printed circuit boards (Printed circuit boards, PCB), and place two Cu pads on it with a spacing of 200μm. At the same time, pay attention to ensure that the spacing between the pads is 200μm, and ensure the parallelism of the Cu pad;

4、然后采用细的纸棉签将搅拌好的Sn3.5Ag钎料焊膏涂敷于两个Cu焊盘之间,采用热风返修工作台(美国PACE ST325)进行重熔实验,重熔温度设定为245℃,重熔时间设定为50s,空冷,得到Sn3.5Ag钎料对接接头;4. Then use a thin paper cotton swab to apply the stirred Sn3.5Ag solder paste between the two Cu pads, and use a hot air rework bench (US PACE ST325) to conduct a remelting experiment, and set the remelting temperature The temperature is 245°C, the remelting time is set to 50s, air-cooled, and a Sn3.5Ag solder butt joint is obtained;

5、将样品连同PCB一起置于丙酮溶液,将线性焊点由PCB取下,不经镶嵌,直接研磨,去除多余钎料,得到Cu/Sn3.5Ag/Cu对接接头;5. Put the sample together with the PCB in acetone solution, remove the linear solder joint from the PCB, grind it directly without inlaying, remove the excess solder, and obtain a Cu/Sn3.5Ag/Cu butt joint;

6、进行指定截面的研磨抛光,借助PLM观察重熔制备的钎焊对接接头晶粒取向,选取在PLM下呈现单晶焊点的对接接头;6. Grinding and polishing the specified cross-section, observing the grain orientation of the brazed butt joint prepared by remelting with the help of PLM, and selecting the butt joint that presents single crystal solder joints under PLM;

7、对选取的单晶焊点对接接头进行线切割,对得到的微型钎焊对接接头进行研磨,去除多余钎料,并对其指定截面进行精抛,最终得到线性焊点截面尺寸为300μm×300μm,焊点厚度为200μm,如图1所示;7. Carry out wire cutting on the selected single crystal solder joints, grind the obtained micro-brazed butt joints, remove excess solder, and perform fine polishing on the specified cross-section, and finally obtain a linear solder joint cross-sectional size of 300μm× 300μm, the solder joint thickness is 200μm, as shown in Figure 1;

8、获取精抛截面的EBSD数据,如图2所示,确定钎焊对接接头是否为晶粒取向一致的单晶焊点,并确定晶粒c轴与电流方向的夹角;8. Obtain the EBSD data of the finely polished section, as shown in Figure 2, determine whether the brazed butt joint is a single crystal solder joint with consistent grain orientation, and determine the angle between the c-axis of the grain and the current direction;

9、借助环氧树脂将样品粘附于尺寸为10mm×10mm×1.5mm的PCB上,并进行指定截面的研磨抛光,最终得到线性焊点截面尺寸为300μm×300μm,焊点厚度为200μm,如图4所示。钎料通电面积为9×104μm2,与实际倒装芯片焊球的通电面积相当;9. Adhere the sample to a PCB with a size of 10mm×10mm×1.5mm by means of epoxy resin, and perform grinding and polishing of a specified section, and finally obtain a linear solder joint with a cross-sectional size of 300 μm × 300 μm and a solder joint thickness of 200 μm, such as Figure 4 shows. The conductive area of the solder is 9×10 4 μm 2 , which is equivalent to the conductive area of the actual flip-chip solder ball;

10、每个单晶焊点对接接头通过线切割为多个线性焊点,其中一个焊点进行深腐蚀,以获得重熔制备焊点初始界面IMCs状态;10. Each single crystal solder joint butt joint is cut into multiple linear solder joints by wire cutting, and one of the solder joints is subjected to deep etching to obtain the initial interface IMCs state of the solder joint prepared by remelting;

11、一个焊点进行电迁移实验,对其横截面进行微观组织、晶体取向观察和成分分析,然后对先后经过7天、14天、21天、28天和35天电迁移实验后的同一焊点抛光横截面进行微观组织观察和成分分析,最后在35天电迁移实验后对焊点进行深腐蚀;11. Conduct electromigration experiments on a solder joint, conduct microstructure, crystal orientation observation and composition analysis on its cross section, and then conduct electromigration experiments on the same solder joint after 7 days, 14 days, 21 days, 28 days and 35 days Spot polished cross-section for microstructure observation and component analysis, and finally deep corrosion of solder joints after 35-day electromigration experiment;

12、一个焊点进行与电迁移实验对应温度的时效实验,对其进行微观组织、晶体取向观察和成分分析,并测量界面IMCs层的厚度,获得焊点初始横截面内部和界面IMCs状态。分别进行7天、14天、21天、28天和35天的时效处理后,对同一样品抛光横截面进行微观组织观察和成分分析,并在35天时效后对焊点进行深腐蚀;12. A solder joint is subjected to an aging experiment at the temperature corresponding to the electromigration experiment, and its microstructure, crystal orientation observation and composition analysis are carried out, and the thickness of the interface IMCs layer is measured to obtain the internal and interface IMCs state of the initial cross section of the solder joint. After 7 days, 14 days, 21 days, 28 days and 35 days of aging treatment, the microstructure observation and component analysis of the polished cross-section of the same sample were carried out, and the solder joints were deeply etched after 35 days of aging;

13、三个焊点进行电迁移失效时间测试,取平均值作为失效时间,由于钎料具有较大的通电面积,所以电阻较低,因此,在到达失效时间时,电阻会突然升高,在本实验中,钎料通电面积为9×104μm2,与实际焊球失效面积相当,因此也可以在电阻记录过程中看到类似的现象,在电阻记录过程中,钎料电阻骤升的地方设定为钎料的失效时间。13. Three solder joints are tested for electromigration failure time, and the average value is taken as the failure time. Since the solder has a large current-carrying area, the resistance is low. Therefore, when the failure time is reached, the resistance will suddenly increase. In this experiment, the conductive area of the solder is 9×10 4 μm 2 , which is equivalent to the failure area of the actual solder ball. Therefore, a similar phenomenon can also be seen in the resistance recording process. During the resistance recording process, the resistance of the solder increases sharply The local setting is the expiration time of the solder.

Claims (9)

1. a kind of crystal grain is orientated consistent banjo fixing butt jointing electro-migration testing method, it is characterised in that comprise the following steps:
(1) oxide and organic pollution of bond pad surface, are removed, double faced adhesive tape is adhered on substrate, and two pads are placed in On substrate, it is ensured that the solder side of two pads is parallel, and there is certain spacing, to ensure weld size and width consistency, welding Face vertical substrate;
(2), the solder soldering paste of selection is coated between the solder side of two pads, remelting is carried out, then cools down, obtains corresponding Solder banjo fixing butt jointing;Solder banjo fixing butt jointing is placed in acetone soln together with substrate, by solder banjo fixing butt jointing from base Removed on plate, obtain the soldering banjo fixing butt jointing prepared with certain grain-oriented remelting, without inlaying, directly grind, to go Except redundant brazing filler metal, and can be polished as the surface in section to soldering banjo fixing butt jointing;
(3) pricker polished, is observed by cross-polarization optics microscope (Polarized light microscopy, PLM) Banjo fixing butt jointing surface sections are welded, the β-Sn crystal grain of different crystal orientation is distinguished, is chosen under PLM and single grain-oriented pricker is presented Weld banjo fixing butt jointing;
(4) the solder docking monocrystalline joint obtained by, being observed as PLM carries out wire cutting, obtains what is prepared with step (2) remelting Soldering banjo fixing butt jointing has multiple miniature soldering banjo fixing butt jointings that same die is orientated, and obtained miniature soldering banjo fixing butt jointing is entered Row essence is thrown, and is obtained EBSD (Electron Backscattered Diffraction, EBSD) data, is determined pricker Weld the angle of banjo fixing butt jointing crystal grain c-axis and the sense of current;
(5), the solder connector that step (4) progress wire cutting is obtained is adhered on substrate by epoxy resin, and specified The grinding and polishing in section, finally give available for carry out electro-migration testing soldering banjo fixing butt jointing, and carry out solder joint cross section and Overlook direction IMCs develops behavioural analysis;
(6) the related reliability testing of electro-migration testing, is carried out, on the basis of soldering banjo fixing butt jointing crystal grain orientation is consistent, is obtained To the solder joint electromigration reliability data for possessing comparativity;
Solder soldering paste for institute's Sn bases bianry alloy, ternary alloy three-partalloy or quaternary alloy.
2. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Step (4) carries out the processing of miniature soldering banjo fixing butt jointing using wire cutting.
3. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Substrate is resistant to remelting temperature and electromigration temperature and non-conductive.
4. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Substrate uses printed circuit board (PCB).
5. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that The pad is selected from Cu, Cu/Ni/Au, Cu/Cu6Sn5
6. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Solder soldering paste is selected from bianry alloy SnCu series, SnAg series, SnZn series, SnBi series or SnIn series, ternary alloy three-partalloy SnAgCu series, SnAgBi series or SnAgIn series, quaternary SnAgBiIn series leadless solders.
7. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Remelting in step (2), temperature range selects 200 DEG C to 700 DEG C.
8. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Cooling in step (2), selects the type of cooling of furnace cooling, air cooling, air-cooled, water cooling or oil cooling.
9. consistent banjo fixing butt jointing electro-migration testing method is orientated according to a kind of crystal grain described in claim 1, it is characterised in that Related reliability testing in step (6) be remelting prepare interface microstructure observation, crystal orientation observation and constituent analysis, Timeliness experiment, electromigration experiment, electromigration lifetime test.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107876920A (en) * 2017-12-04 2018-04-06 北京工业大学 A kind of preparation method with super more small grains docking solder joints
CN108422116A (en) * 2018-02-01 2018-08-21 北京工业大学 The method for preparing the unleaded interconnection solder joint of polycrystalline structure by adding Bi and In
CN108663402A (en) * 2018-03-14 2018-10-16 北京工业大学 A kind of miniature solder joint thermophoresis test method
CN112255526A (en) * 2020-09-09 2021-01-22 北京航天控制仪器研究所 Preparation method and test method of copper-filled silicon through hole electromigration test structure
CN114211070A (en) * 2021-12-31 2022-03-22 北京工业大学 Method for preparing solder joint remelting crystal orientation of Sn-based brazing filler metal
CN115116990A (en) * 2021-03-23 2022-09-27 株式会社电装 Semiconductor device and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201681119U (en) * 2010-03-26 2010-12-22 北京工业大学 Data collecting system for electro-migration voltage at welding spot
CN102323451A (en) * 2011-05-30 2012-01-18 华南理工大学 A kind of method and device that detects interconnection solder joint electric migration performance
CN103658899A (en) * 2013-12-04 2014-03-26 哈尔滨工业大学深圳研究生院 Method for preparing and applying single orientation Cu6Sn5 intermetallic compound micro-interconnecting welding point structure
CN103962680A (en) * 2014-04-13 2014-08-06 北京工业大学 Soldered joint electromigration experiment device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201681119U (en) * 2010-03-26 2010-12-22 北京工业大学 Data collecting system for electro-migration voltage at welding spot
CN102323451A (en) * 2011-05-30 2012-01-18 华南理工大学 A kind of method and device that detects interconnection solder joint electric migration performance
CN103658899A (en) * 2013-12-04 2014-03-26 哈尔滨工业大学深圳研究生院 Method for preparing and applying single orientation Cu6Sn5 intermetallic compound micro-interconnecting welding point structure
CN103962680A (en) * 2014-04-13 2014-08-06 北京工业大学 Soldered joint electromigration experiment device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHENG-EN HO等: "Electromigration in 3D-IC scale Cu/Sn/Cu solder joints", 《JOURNAL OF ALLOYS AND COMPOUNDS》 *
赵建飞: "Sn晶粒扩散各向异性对微焊点电迁移行为影响", 《中国优秀硕士学位论文全文数据库 信息科技辑》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107876920A (en) * 2017-12-04 2018-04-06 北京工业大学 A kind of preparation method with super more small grains docking solder joints
CN108422116A (en) * 2018-02-01 2018-08-21 北京工业大学 The method for preparing the unleaded interconnection solder joint of polycrystalline structure by adding Bi and In
CN108663402A (en) * 2018-03-14 2018-10-16 北京工业大学 A kind of miniature solder joint thermophoresis test method
CN112255526A (en) * 2020-09-09 2021-01-22 北京航天控制仪器研究所 Preparation method and test method of copper-filled silicon through hole electromigration test structure
CN115116990A (en) * 2021-03-23 2022-09-27 株式会社电装 Semiconductor device and method of manufacturing the same
CN114211070A (en) * 2021-12-31 2022-03-22 北京工业大学 Method for preparing solder joint remelting crystal orientation of Sn-based brazing filler metal
CN114211070B (en) * 2021-12-31 2023-09-19 北京工业大学 A welding method that makes the grain orientation of solder joints into multiple twins

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