CN107093405B - AMOLED pixel-driving circuit and image element driving method - Google Patents
AMOLED pixel-driving circuit and image element driving method Download PDFInfo
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- CN107093405B CN107093405B CN201710444799.7A CN201710444799A CN107093405B CN 107093405 B CN107093405 B CN 107093405B CN 201710444799 A CN201710444799 A CN 201710444799A CN 107093405 B CN107093405 B CN 107093405B
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- 229920001621 AMOLED Polymers 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 229
- 239000010408 film Substances 0.000 claims abstract description 108
- 239000003990 capacitor Substances 0.000 claims abstract description 50
- 208000032005 Spinocerebellar ataxia with axonal neuropathy type 2 Diseases 0.000 claims description 24
- 208000033361 autosomal recessive with axonal neuropathy 2 spinocerebellar ataxia Diseases 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 21
- 238000004020 luminiscence type Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000003760 hair shine Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 230000005611 electricity Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The present invention provides a kind of AMOLED pixel-driving circuit and image element driving method.The AMOLED pixel-driving circuit uses 6T2C structure, including the first film transistor as driving thin film transistor (TFT), second thin film transistor (TFT), third thin film transistor (TFT), 4th thin film transistor (TFT), 5th thin film transistor (TFT), 6th thin film transistor (TFT), first capacitor, second capacitor, and Organic Light Emitting Diode, the first scanning signal is accessed in circuit, second scanning signal, third scanning signal, voltage data signal, power supply positive voltage, and power supply negative voltage, the circuit is capable of the threshold voltage of effective compensation driving thin film transistor (TFT), solve the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, guarantee that the light emission luminance of Organic Light Emitting Diode is uniform, improve the display effect of picture.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of AMOLED pixel-driving circuits and image element driving method.
Background technique
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width is known as being the display for most having development potentiality by industry, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring
Device.
OLED display according to driving method can be divided into passive matrix OLED (Passive Matrix OLED,
) and active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. directly addressing and film crystal PMOLED
Manage two class of (Thin Film Transistor, TFT) matrix addressing.Wherein, AMOLED has the pixel in array arrangement, belongs to
In active display type, luminous efficacy is high, is typically used as large scale display device high-definition.
AMOLED is current driving apparatus, when there is electric current to flow through Organic Light Emitting Diode, organic light-emitting diode,
And light emission luminance is determined by the electric current for flowing through Organic Light Emitting Diode itself.Most of existing integrated circuit (Integrated
Circuit, IC) voltage signal is all only transmitted, therefore the pixel-driving circuit of AMOLED needs to complete that voltage signal is changed into electricity
Flow the task of signal.Traditional AMOLED pixel-driving circuit is usually 2T1C, i.e., two thin film transistor (TFT)s add a capacitor
Voltage transformation is electric current by structure.
As shown in Figure 1, the AMOLED pixel-driving circuit of existing 2T1C structure, including first film transistor T10,
Two thin film transistor (TFT) T20, capacitor C10 and Organic Light Emitting Diode D10, the first film transistor T10 are that driving film is brilliant
Body pipe, the second thin film transistor (TFT) T20 are switching thin-film transistor, and the capacitor C10 is storage capacitance.Specifically, described
The grid of second thin film transistor (TFT) T20 accesses scanning drive signal Gate, source electrode incoming data signal Data, and drain electrode is electrically connected
The grid of first film transistor T10；The source electrode of the first film transistor T10 accesses power supply positive voltage OVDD, drain electrode electricity
Property connection Organic Light Emitting Diode D10 anode；One end of capacitor C10 is electrically connected the grid of first film transistor T10, separately
One end is electrically connected the source electrode of first film transistor T10, and the cathode of Organic Light Emitting Diode D10 accesses power supply negative voltage
OVSS.When driving to AMOLED, the electric current for flowing through Organic Light Emitting Diode D10 meets the 2T1C pixel-driving circuit:
I=k × (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D10, and k is the intrinsic conduction factor for driving thin film transistor (TFT),
Vgs is driving thin film transistor (TFT), that is, first film transistor T10 grid and source electrode voltage difference, and Vth is driving thin film transistor (TFT)
That is the threshold voltage of first film transistor T10, it is seen that flow through the electric current and driving thin film transistor (TFT) of Organic Light Emitting Diode D10
Threshold voltage it is related.
Due to unstability of panel processing procedure etc., so that the driving film in panel in each pixel-driving circuit is brilliant
The threshold voltage of body pipe creates a difference, even if the driving film crystalline substance being applied in each pixel-driving circuit that data voltage is equal
Body pipe also will appear the inconsistent situation of the electric current of inflow Organic Light Emitting Diode, cause the homogeneity of image quality difficult
To realize.And with the passage of driving thin film transistor (TFT) driving time, material meeting aging, the variation of thin film transistor (TFT) cause
It drives the threshold voltage of thin film transistor (TFT) to generate drift, and the degree of aging of thin-film-transistor material is different, causes each driving thin
The threshold voltage shift amount of film transistor is different, will cause the non-uniform phenomenon of Display panel, and can make to drive film crystal
The cut-in voltage of pipe rises, and flows into the current reduction of Organic Light Emitting Diode, leads to panel luminance reduction, luminous efficiency decline etc.
Problem.
It, in the prior art generally can be to AMOLED pixel driver aiming at the problem that driving thin film transistor (TFT) threshold voltage shift
Circuit improves, and increases thin film transistor (TFT) and controls signal accordingly, is carried out with the threshold voltage to driving thin film transistor (TFT)
Compensation, makes Organic Light Emitting Diode when luminous, and the electric current for flowing through it is unrelated with the driving threshold voltage of thin film transistor (TFT).It please join
Read Fig. 2, a kind of existing AMOLED pixel-driving circuit adds a capacitor using the structure namely five thin film transistor (TFT)s of 5T1C
Structure, including first film transistor T100, the second thin film transistor (TFT) T200, third thin film transistor (TFT) T300, the 4th film
Transistor Td1, the 5th thin film transistor (TFT) Ts1, first capacitor C100 and Organic Light Emitting Diode D100, the company of specific each element
Connect mode are as follows: the grid of first film transistor T100 accesses scanning signal Vscan1, and source electrode is electrically connected organic light-emitting diodes
The anode of pipe D100, drain electrode are electrically connected the cathode of organic light emitting diode D100；The grid of the second thin film transistor (TFT) T200
First control signal CT1 is accessed in pole, and source electrode is electrically connected the cathode of organic light emitting diode D100, and it is thin that drain electrode is electrically connected the 4th
The drain electrode of film transistor Td1；The grid of the third thin film transistor (TFT) T300 accesses second control signal CT2, and source electrode electrically connects
The drain electrode of the 4th thin film transistor (TFT) Td1 is connect, drain electrode is electrically connected the grid of the 4th thin film transistor (TFT) Td1；4th film is brilliant
The grid of body pipe Td1 is electrically connected one end of first capacitor C100, and source electrode accesses power supply negative voltage Vss；5th thin film transistor (TFT)
The grid of Ts1 accesses scanning signal Vscan1, source electrode incoming data signal Vdata1, and drain electrode is electrically connected first capacitor C100's
The other end；The anode of the Organic Light Emitting Diode D100 accesses power supply positive voltage Vdd.
As shown in figure 3, the timing diagram of the AMOLED pixel-driving circuit for Fig. 2, AMOLED pixel-driving circuit work
When, four-stage is successively carried out, in the first stage in t1, scanning signal Vscan1 is high potential, the first, the 5th thin film transistor (TFT)
T100, Ts1 are opened, and first control signal CT1 is high potential, and the second thin film transistor (TFT) T200 is opened, and second control signal CT2 is
High potential, third thin film transistor (TFT) T300 are opened, and power supply positive voltage Vdd, data-signal is written in one end of first capacitor C100
Vdata1 provides low reference voltage VL and the other end of first capacitor C100 is written；In second stage t2, scanning signal
Vscan1 is high potential, and the first, the 5th thin film transistor (TFT) T100, Ts1 is opened, and first control signal CT1 is low potential, and second is thin
Film transistor T200 is closed, and second control signal CT2 is high potential, and third thin film transistor (TFT) T300 is opened, first capacitor C100
Start to discharge, until the 4th thin film transistor (TFT) Td1 is closed, the grid namely first capacitor of the 4th thin film transistor (TFT) Td1 at this time
The voltage of one end of C100 is Vth+Vss, and wherein Vth is the threshold voltage of the 4th thin film transistor (TFT) Td1, first capacitor C100 two
The voltage difference at end is Vth+Vss-VL；In phase III t3, scanning signal Vscan1 is high potential, and the first, the 5th film is brilliant
Body pipe T100, Ts1 are opened, and first control signal CT1 is low potential, and the second thin film transistor (TFT) T200 is closed, second control signal
CT2 is low potential, and third thin film transistor (TFT) T300 is closed, and data-signal Vdata1 provides voltage data signal VH and is written first
One end voltage of the other end of capacitor C100, first capacitor C100 becomes Vth+Vss+VH-VL, at this time the 4th thin film transistor (TFT)
The gate-source voltage difference of Td1 is Vth+VH-VL, flows through the electric current and the 4th thin film transistor (TFT) Td1 of Organic Light Emitting Diode D100
Threshold voltage it is unrelated, complete the compensation to driving thin film transistor (TFT) threshold voltage, however above-mentioned AMOLED pixel-driving circuit
Fourth stage t4 can be entered after completing phase III t3, scanning signal Vscan1 is low potential, the 5th thin film transistor (TFT) at this time
Ts1 is closed, this current potential that will lead to the other end of first capacitor C100 cannot keep and the state in floating (floating),
This can make one end of first capacitor C100 namely the current potential of the grid of the 4th thin film transistor (TFT) Td1 be in nondeterministic statement, therefore
The gate-source voltage difference of 4th thin film transistor (TFT) Td1 cannot keep state when phase III t3, will lead to Display panel not just
Really, the display effect of picture is influenced.
Summary of the invention
The purpose of the present invention is to provide a kind of AMOLED pixel-driving circuits, being capable of effective compensation driving thin film transistor (TFT)
Threshold voltage, solve the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, guarantee
The light emission luminance of Organic Light Emitting Diode is uniform, improves the display effect of picture.
The object of the invention is also to provide a kind of AMOLED image element driving methods, being capable of effective compensation driving film crystal
The threshold voltage of pipe solves the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, protects
The light emission luminance for demonstrate,proving Organic Light Emitting Diode is uniform, improves the display effect of picture.
To achieve the above object, the present invention provides a kind of AMOLED pixel-driving circuits, comprising: the first film crystal
Pipe, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th film crystal
Pipe, first capacitor, the second capacitor and Organic Light Emitting Diode；
The grid of the first film transistor is electrically connected first node, and source electrode accesses power supply negative voltage, and drain electrode is electrically
Connect the drain electrode of third thin film transistor (TFT)；
The grid of second thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected first node, drain electrode electricity
Property connection first film transistor drain electrode；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected organic light emitting diode
Cathode；
The grid of 4th thin film transistor (TFT) accesses third scanning signal, source electrode incoming data signal voltage, drain electrode electricity
Property connection second node；
The grid of 5th thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected organic light emitting diode
Anode, drain electrode are electrically connected second node；
The grid of 6th thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected organic light emitting diode
Anode, drain electrode are electrically connected the cathode of organic light emitting diode；
One end of the first capacitor is electrically connected first node, and the other end is electrically connected common ground end；
One end of second capacitor is electrically connected first node, and the other end is electrically connected second node；
The anode of the Organic Light Emitting Diode accesses power supply positive voltage.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
First scanning signal, the second scanning signal and third scanning signal pass through external sequence controller and generate.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT), the 6th thin film transistor (TFT) are N-type TFT.
First scanning signal, the second scanning signal and third scanning signal, which are combined, successively corresponds to initialization rank
Section, threshold voltage memory phase and luminescence display stage；
In the initial phase, first scanning signal is high potential, and second scanning signal is high potential, institute
Stating third scanning signal is low potential；
In the threshold voltage memory phase, first scanning signal is high potential, and second scanning signal is low
Current potential, the third scanning signal are high potential；
In the luminescence display stage, first scanning signal is low potential, and second scanning signal is high potential,
The third scanning signal is low potential.
The present invention also provides a kind of AMOLED image element driving methods, include the following steps:
Step 1 provides an AMOLED pixel-driving circuit；
The AMOLED pixel-driving circuit includes: first film transistor, the second thin film transistor (TFT), third film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), first capacitor, the second capacitor and organic light emission
Diode；
The grid of the first film transistor is electrically connected first node, and source electrode accesses power supply negative voltage, and drain electrode is electrically
Connect the drain electrode of third thin film transistor (TFT)；
The grid of second thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected first node, drain electrode electricity
Property connection first film transistor drain electrode；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected organic light emitting diode
Cathode；
The grid of 4th thin film transistor (TFT) accesses third scanning signal, source electrode incoming data signal voltage, drain electrode electricity
Property connection second node；
The grid of 5th thin film transistor (TFT) accesses the second scanning signal, and source electrode is electrically connected organic light emitting diode
Anode, drain electrode are electrically connected second node；
The grid of 6th thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected organic light emitting diode
Anode, drain electrode are electrically connected the cathode of organic light emitting diode；
One end of the first capacitor is electrically connected first node, and the other end is electrically connected common ground end；
One end of second capacitor is electrically connected first node, and the other end is electrically connected second node；
The anode of the Organic Light Emitting Diode accesses power supply positive voltage；
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT), the 6th thin film transistor (TFT) are N-type TFT；
Step 2, into initial phase；
First scanning signal provides high potential, described second, the 6th thin film transistor (TFT) opening, the second scanning letter
Number offer high potential, the third, the 5th thin film transistor (TFT) are opened, and the third scanning signal provides low potential, and the described 4th
Thin film transistor (TFT) is closed, and power supply positive voltage is written in the second node and first node；
Step 3, into threshold voltage memory phase；
First scanning signal provides high potential, described second, the 6th thin film transistor (TFT) opening, the second scanning letter
Number low potential being provided, the third, the 5th thin film transistor (TFT) are closed, and the third scanning signal provides high potential, and the described 4th
Thin film transistor (TFT) is opened, and the second node is written voltage data signal, the voltage change of the first node to OVSS+Vth,
Wherein OVSS is power supply negative voltage, and Vth is the threshold voltage of first film transistor；
Step 4, into the luminescence display stage；
First scanning signal provides low potential, described second, the closing of the 6th thin film transistor (TFT), the second scanning letter
Number offer high potential, the third, the 5th thin film transistor (TFT) are opened, and the third scanning signal provides low potential, and the described 4th
Thin film transistor (TFT) is closed, and the voltage change of the second node is to power supply positive voltage, and the voltage change of the first node is extremely
OVSS+Vth+ δ V, wherein δ V is that the voltage of second node is changed to after power supply positive voltage by voltage data signal to first node
The influence that generates of voltage, the organic light-emitting diode, and flow through the electric current and first of the Organic Light Emitting Diode
The threshold voltage of thin film transistor (TFT) is unrelated.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
First scanning signal, the second scanning signal and third scanning signal pass through external sequence controller and generate.
Beneficial effects of the present invention: a kind of AMOLED pixel-driving circuit provided by the invention, using 6T2C structure, including
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th film crystal as driving thin film transistor (TFT)
Pipe, the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), first capacitor, the second capacitor and Organic Light Emitting Diode, in circuit
Access the first scanning signal, the second scanning signal, third scanning signal, voltage data signal, power supply positive voltage and power supply negative electricity
Pressure, the circuit are capable of the threshold voltage of effective compensation driving thin film transistor (TFT), and solution is flowed through as caused by threshold voltage shift to be had
The unstable problem of the electric current of machine light emitting diode guarantees that the light emission luminance of Organic Light Emitting Diode is uniform, improves the aobvious of picture
Show effect.A kind of AMOLED image element driving method provided by the invention is capable of the threshold value electricity of effective compensation driving thin film transistor (TFT)
Pressure, solves the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, guarantees organic light emission
The light emission luminance of diode is uniform, improves the display effect of picture.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is a kind of circuit diagram of the AMOLED pixel-driving circuit of existing 2T1C structure；
Fig. 2 is a kind of circuit diagram of the AMOLED pixel-driving circuit of existing 5T1C structure；
Fig. 3 is the timing diagram of the AMOLED pixel-driving circuit of Fig. 2；
Fig. 4 is the circuit diagram of AMOLED pixel-driving circuit of the invention；
Fig. 5 is the timing diagram of AMOLED pixel-driving circuit of the invention；
Fig. 6 is the schematic diagram of the step 2 of AMOLED image element driving method of the invention；
Fig. 7 is the schematic diagram of the step 3 of AMOLED image element driving method of the invention；
Fig. 8 is the schematic diagram of the step 4 of AMOLED image element driving method of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Fig. 4 and Fig. 5 is please referred to, and combines Fig. 6 to Fig. 8, the present invention provides a kind of AMOLED pixel-driving circuit, comprising:
First film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th film
Transistor T5, the 6th thin film transistor (TFT) T6, first capacitor C1, the second capacitor C2 and Organic Light Emitting Diode D1；
The connection type of specific each element is as follows: the grid of the first film transistor T1 is electrically connected first node G,
Source electrode accesses power supply negative voltage OVSS, and drain electrode is electrically connected the drain electrode of third thin film transistor (TFT) T3；Second thin film transistor (TFT)
The grid of T2 accesses the first scanning signal Scan1, and source electrode is electrically connected first node G, and drain electrode is electrically connected the first film crystal
The drain electrode of pipe T1；The grid of the third thin film transistor (TFT) T3 accesses the second scanning signal Scan2, and source electrode is electrically connected organic hair
The cathode of optical diode D1；The grid of the 4th thin film transistor (TFT) T4 accesses third scanning signal Scan3, and source electrode accesses data
Signal voltage Vdata, drain electrode are electrically connected second node N；Grid access the second scanning letter of the 5th thin film transistor (TFT) T5
Number Scan2, source electrode are electrically connected the anode of organic light emitting diode D1, and drain electrode is electrically connected second node N；6th film
The grid of transistor T6 accesses the first scanning signal Scan1, and source electrode is electrically connected the anode of organic light emitting diode D1, drain electrode electricity
Property connection Organic Light Emitting Diode D1 cathode；One end of the first capacitor C1 is electrically connected first node G, and the other end is electrical
Connect common ground end GND；One end of the second capacitor C2 is electrically connected first node G, and the other end is electrically connected the second section
Point N；The anode of the Organic Light Emitting Diode D1 accesses power supply positive voltage OVDD.
Specifically, the first film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1
It shines, the AMOLED pixel-driving circuit can compensate for the threshold value electricity of the driving i.e. first film transistor T1 of thin film transistor (TFT)
Pressure.Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film crystal
Pipe T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
Thin film transistor (TFT) or amorphous silicon film transistor.The first scanning signal Scan1, the second scanning signal Scan2 and third
Scanning signal Scan3 passes through external sequence controller and generates.
Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin
Film transistor T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6 are N-type TFT.
Further, referring to Fig. 5, the first scanning signal Scan1, the second scanning signal Scan2 and third scanning
Signal Scan3, which is combined, successively corresponds to initial phase S1, threshold voltage memory phase S2 and luminescence display stage S3；
Referring to Fig. 6, in the initial phase S1, the first scanning signal Scan1 is high potential, described second,
6th thin film transistor (TFT) T2, T6 is opened, and the second scanning signal Scan2 is high potential, the third, the 5th thin film transistor (TFT)
T3, T5 are opened, and the third scanning signal Scan3 is low potential, and the 4th thin film transistor (TFT) T4 is closed, the second node
Power supply positive voltage OVDD is written via the 5th open thin film transistor (TFT) T5 in N, and the first node G is via the 6th open film
Power supply positive voltage OVDD is written in transistor T6, third thin film transistor (TFT) T3 and the second thin film transistor (TFT) T2, completes to first node
The initialization of the current potential of G, since the 6th thin film transistor (TFT) T6 is opened in initial phase S1, Organic Light Emitting Diode D1 is not sent out
Light；
Referring to Fig. 7, the first scanning signal Scan1 is high potential, described in the threshold voltage memory phase S2
The second, the 6th thin film transistor (TFT) T2, T6 is opened, and the second scanning signal Scan2 is low potential, the third, the 5th film
Transistor T3, T5 are closed, and the third scanning signal Scan3 is high potential, and the 4th thin film transistor (TFT) T4 is opened, and described the
Voltage data signal Vdata is written via the 4th open thin film transistor (TFT) T4 in two node N, and the first node G passes through second
Thin film transistor (TFT) T2 and first film transistor T1 electric discharge, until the gate-source voltage difference of first film transistor T1 is first thin
When the threshold voltage vt h of film transistor T1, first film transistor T1 is closed, and the voltage of first node G no longer changes, and at this time the
The voltage of one node G is first film transistor T1 source voltage namely power supply negative voltage OVSS and first film transistor T1
The sum of threshold voltage vt h, i.e. OVSS+Vth, it is organic due to being opened in the 6th thin film transistor (TFT) T6 of threshold voltage memory phase S2
Light emitting diode D1 does not shine；
Referring to Fig. 8, in the luminescence display stage S3, the first scanning signal Scan1 is low potential, described the
Two, the 6th thin film transistor (TFT) T2, T6 is closed, and the second scanning signal Scan2 is high potential, and the third, the 5th film are brilliant
Body pipe T3, T5 are opened, and the third scanning signal Scan3 is low potential, and the 4th thin film transistor (TFT) T4 is closed, and described second
The voltage of node N is changed to power supply positive voltage OVDD by voltage data signal Vdata, due to first capacitor C1 and the second capacitor C2
Coupling, the voltage change of the first node G to OVSS+Vth+ δ V, wherein δ V is the voltage of second node N by data-signal
Voltage Vdata is changed to the influence generated after power supply positive voltage OVDD to the voltage of first node G, the Organic Light Emitting Diode
D1 shines.
It should be noted that according to capacitive coupling principle, it is known that δ V=(OVDD-Vdata) × C2/ (C1+C2), wherein
C1 is the capacitance of first capacitor, and C2 is the capacitance of the second capacitor, at this time the grid source electrode electricity of the first film transistor T1
Pressure difference becomes δ V+Vth+OVSS-OVSS=δ V+Vth；
According to the formula for the electric current for flowing through Organic Light Emitting Diode:
I=K (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D1, and K is driving thin film transistor (TFT) namely the first film crystal
The intrinsic conduction factor of pipe T1, Vgs be drive the gate-source voltage of thin film transistor (TFT) namely first film transistor T1 poor, and this
When first film transistor T1 gate-source voltage difference be δ V+Vth, therefore I=K (Vgs-Vth)2=K (δ V+Vth-Vth)2=K
(δV)2=K [(OVDD-Vdata) × C2/ (C1+C2)]2, it is seen that Organic Light Emitting Diode D1 flows through the organic light emission when shining
The electric current of diode D1 is unrelated with the threshold voltage of first film transistor T1, is able to solve by driving film crystal pipe threshold electricity
The unstable problem of the electric current of Organic Light Emitting Diode is flowed through caused by pressure drift, keeps the light emission luminance of Organic Light Emitting Diode equal
It is even, improve the display effect of picture.
Fig. 6 to Fig. 8 is please referred to, and combines Fig. 4 and Fig. 5, is based on above-mentioned AMOLED pixel-driving circuit, the present invention also provides
A kind of AMOLED image element driving method, includes the following steps:
Step 1, referring to Fig. 4, provide an AMOLED pixel-driving circuit；
The AMOLED pixel-driving circuit includes: first film transistor T1, the second thin film transistor (TFT) T2, third film
Transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, first capacitor C1, the second electricity
Hold C2 and Organic Light Emitting Diode D1；
The connection type of specific each element is as follows: the grid of the first film transistor T1 is electrically connected first node G,
Source electrode accesses power supply negative voltage OVSS, and drain electrode is electrically connected the drain electrode of third thin film transistor (TFT) T3；Second thin film transistor (TFT)
The grid of T2 accesses the first scanning signal Scan1, and source electrode is electrically connected first node G, and drain electrode is electrically connected the first film crystal
The drain electrode of pipe T1；The grid of the third thin film transistor (TFT) T3 accesses the second scanning signal Scan2, and source electrode is electrically connected organic hair
The cathode of optical diode D1；The grid of the 4th thin film transistor (TFT) T4 accesses third scanning signal Scan3, and source electrode accesses data
Signal voltage Vdata, drain electrode are electrically connected second node N；Grid access the second scanning letter of the 5th thin film transistor (TFT) T5
Number Scan2, source electrode are electrically connected the anode of organic light emitting diode D1, and drain electrode is electrically connected second node N；6th film
The grid of transistor T6 accesses the first scanning signal Scan1, and source electrode is electrically connected the anode of organic light emitting diode D1, drain electrode electricity
Property connection Organic Light Emitting Diode D1 cathode；One end of the first capacitor C1 is electrically connected first node G, and the other end is electrical
Connect common ground end GND；One end of the second capacitor C2 is electrically connected first node G, and the other end is electrically connected the second section
Point N；The anode of the Organic Light Emitting Diode D1 accesses power supply positive voltage OVDD；
Wherein, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film
Transistor T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6 are N-type TFT.
Specifically, the first film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1
It shines, the AMOLED image element driving method can compensate for the threshold value electricity of the driving i.e. first film transistor T1 of thin film transistor (TFT)
Pressure.Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film crystal
Pipe T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
Thin film transistor (TFT) or amorphous silicon film transistor.The first scanning signal Scan1, the second scanning signal Scan2 and third
Scanning signal Scan3 passes through external sequence controller and generates.
Step 2, referring to Fig. 6, into initial phase S1；
The first scanning signal Scan1 provides high potential, and described second, the 6th thin film transistor (TFT) T2, T6 opening are described
Second scanning signal Scan2 provides high potential, and the third, the 5th thin film transistor (TFT) T3, T5 are opened, the third scanning signal
Scan3 provides low potential, and the 4th thin film transistor (TFT) T4 is closed, and the second node N is via the 5th open film crystal
Power supply positive voltage OVDD is written in pipe T5, and the first node G is via the 6th open thin film transistor (TFT) T6, third thin film transistor (TFT)
Power supply positive voltage OVDD is written in T3 and the second thin film transistor (TFT) T2, completes the initialization to the current potential of first node G, due to
The 6th thin film transistor (TFT) T6 is opened in initial phase S1, and Organic Light Emitting Diode D1 does not shine.
Step 3, referring to Fig. 7, into threshold voltage memory phase S2；
The first scanning signal Scan1 provides high potential, and described second, the 6th thin film transistor (TFT) T2, T6 opening are described
Second scanning signal Scan2 provides low potential, and the third, the 5th thin film transistor (TFT) T3, T5 are closed, the third scanning signal
Scan3 provides high potential, and the 4th thin film transistor (TFT) T4 is opened, and the second node N is via the 4th open film crystal
Voltage data signal Vdata is written in pipe T4, and the first node G passes through the second thin film transistor (TFT) T2 and first film transistor T1
Electric discharge, when the gate-source voltage difference of first film transistor T1 is the threshold voltage vt h of first film transistor T1, first
Thin film transistor (TFT) T1 is closed, and the voltage of first node G no longer changes, and the voltage of first node G is first film transistor at this time
The sum of threshold voltage vt h, the i.e. OVSS+Vth of T1 source voltage namely power supply negative voltage OVSS and first film transistor T1, by
It is opened in the 6th thin film transistor (TFT) T6 of threshold voltage memory phase S2, Organic Light Emitting Diode D1 does not shine.
Step 4, referring to Fig. 8, into luminescence display stage S3；
The first scanning signal Scan1 provides low potential, and described second, the 6th thin film transistor (TFT) T2, T6 closing are described
Second scanning signal Scan2 provides high potential, and the third, the 5th thin film transistor (TFT) T3, T5 are opened, the third scanning signal
Scan3 provides low potential, and the 4th thin film transistor (TFT) T4 is closed, and the voltage of the second node N is by voltage data signal
Vdata is changed to power supply positive voltage OVDD, due to the coupling of first capacitor C1 and the second capacitor C2, the electricity of the first node G
Pressure is changed to OVSS+Vth+ δ V, and the voltage that wherein δ V is second node N is changed to power supply positive electricity by voltage data signal Vdata
The influence generated after OVDD to the voltage of first node G is pressed, the Organic Light Emitting Diode D1 shines.
It should be noted that according to capacitive coupling principle, it is known that δ V=(OVDD-Vdata) × C2/ (C1+C2), wherein
C1 is the capacitance of first capacitor, and C2 is the capacitance of the second capacitor, at this time the grid source electrode electricity of the first film transistor T1
Pressure difference becomes δ V+Vth+OVSS-OVSS=δ V+Vth；
According to the formula for the electric current for flowing through Organic Light Emitting Diode:
I=K (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D1, and K is driving thin film transistor (TFT) namely the first film crystal
The intrinsic conduction factor of pipe T1, Vgs be drive the gate-source voltage of thin film transistor (TFT) namely first film transistor T1 poor, and this
When first film transistor T1 gate-source voltage difference be δ V+Vth, therefore I=K (Vgs-Vth)2=K (δ V+Vth-Vth)2=K
(δV)2=K [(OVDD-Vdata) × C2/ (C1+C2)]2, it is seen that Organic Light Emitting Diode D1 flows through the organic light emission when shining
The electric current of diode D1 is unrelated with the threshold voltage of first film transistor T1, is able to solve by driving film crystal pipe threshold electricity
The unstable problem of the electric current of Organic Light Emitting Diode is flowed through caused by pressure drift, keeps the light emission luminance of Organic Light Emitting Diode equal
It is even, improve the display effect of picture.
In conclusion AMOLED pixel-driving circuit of the invention, using 6T2C structure, including as driving film crystal
The first film transistor of pipe, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), first capacitor, the second capacitor and Organic Light Emitting Diode access the first scanning letter in circuit
Number, the second scanning signal, third scanning signal, voltage data signal, power supply positive voltage and power supply negative voltage, which can
Effective compensation drives the threshold voltage of thin film transistor (TFT), and Organic Light Emitting Diode is flowed through in solution as caused by threshold voltage shift
The unstable problem of electric current guarantees that the light emission luminance of Organic Light Emitting Diode is uniform, improves the display effect of picture.Of the invention
AMOLED image element driving method, is capable of the threshold voltage of effective compensation driving thin film transistor (TFT), and solution is led by threshold voltage shift
The unstable problem of the electric current for flowing through Organic Light Emitting Diode caused, guarantees that the light emission luminance of Organic Light Emitting Diode is uniform, changes
The display effect of kind picture.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (8)
1. a kind of AMOLED pixel-driving circuit characterized by comprising first film transistor (T1), the second film crystal
Manage (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th film crystal
Manage (T6), first capacitor (C1), the second capacitor (C2) and Organic Light Emitting Diode (D1)；
The grid of the first film transistor (T1) is electrically connected first node (G), and source electrode accesses power supply negative voltage (OVSS),
Drain electrode is electrically connected the drain electrode of third thin film transistor (TFT) (T3)；
The grid of second thin film transistor (TFT) (T2) accesses the first scanning signal (Scan1), and source electrode is electrically connected first node
(G), drain electrode is electrically connected the drain electrode of first film transistor (T1)；
The grid of the third thin film transistor (TFT) (T3) accesses the second scanning signal (Scan2), and source electrode is electrically connected organic shine
The cathode of diode (D1)；
The grid of 4th thin film transistor (TFT) (T4) accesses third scanning signal (Scan3), source electrode incoming data signal voltage
(Vdata), drain electrode is electrically connected second node (N)；
The grid of 5th thin film transistor (TFT) (T5) accesses the second scanning signal (Scan2), and source electrode is electrically connected organic shine
The anode of diode (D1), drain electrode are electrically connected second node (N)；
The grid of 6th thin film transistor (TFT) (T6) accesses the first scanning signal (Scan1), and source electrode is electrically connected organic shine
The anode of diode (D1), drain electrode are electrically connected the cathode of organic light emitting diode (D1)；
One end of the first capacitor (C1) is electrically connected first node (G), and the other end is electrically connected common ground end (GND)；
One end of second capacitor (C2) is electrically connected first node (G), and the other end is electrically connected second node (N)；
The anode of the Organic Light Emitting Diode (D1) accesses power supply positive voltage (OVDD).
2. AMOLED pixel-driving circuit as described in claim 1, which is characterized in that the first film transistor (T1),
Second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon
Thin film transistor (TFT).
3. AMOLED pixel-driving circuit as described in claim 1, which is characterized in that first scanning signal (Scan1),
Second scanning signal (Scan2) and third scanning signal (Scan3) are generated by external sequence controller.
4. AMOLED pixel-driving circuit as described in claim 1, which is characterized in that the first film transistor (T1),
Second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
6th thin film transistor (TFT) (T6) is N-type TFT.
5. AMOLED pixel-driving circuit as claimed in claim 4, which is characterized in that first scanning signal (Scan1),
Second scanning signal (Scan2) and third scanning signal (Scan3), which are combined, successively corresponds to initial phase (S1), threshold value
Voltage memory phase (S2) and luminescence display stage (S3)；
At the initial phase (S1), first scanning signal (Scan1) is high potential, second scanning signal
It (Scan2) is high potential, the third scanning signal (Scan3) is low potential；
In the threshold voltage memory phase (S2), first scanning signal (Scan1) is high potential, the second scanning letter
Number (Scan2) is low potential, and the third scanning signal (Scan3) is high potential；
In the luminescence display stage (S3), first scanning signal (Scan1) is low potential, second scanning signal
It (Scan2) is high potential, the third scanning signal (Scan3) is low potential.
6. a kind of AMOLED image element driving method, which comprises the steps of:
Step 1 provides a kind of AMOLED pixel-driving circuit as claimed in claim 4；
Step 2, into initial phase (S1)；
First scanning signal (Scan1) provides high potential, and the described second, the 6th thin film transistor (TFT) (T2, T6) is opened, described
Second scanning signal (Scan2) provides high potential, and the third, the 5th thin film transistor (TFT) (T3, T5) are opened, the third scanning
Signal (Scan3) provides low potential, and the 4th thin film transistor (TFT) (T4) is closed, the second node (N) and first node (G)
It is written power supply positive voltage (OVDD)；
Step 3, into threshold voltage memory phase (S2)；
First scanning signal (Scan1) provides high potential, and the described second, the 6th thin film transistor (TFT) (T2, T6) is opened, described
Second scanning signal (Scan2) provides low potential, and the third, the 5th thin film transistor (TFT) (T3, T5) are closed, the third scanning
Signal (Scan3) provides high potential, and the 4th thin film transistor (TFT) (T4) is opened, and data-signal is written in the second node (N)
Voltage (Vdata), the voltage change of the first node (G) to OVSS+Vth, wherein OVSS is power supply negative voltage, Vth the
The threshold voltage of one thin film transistor (TFT) (T1)；
Step 4, into luminescence display stage (S3)；
First scanning signal (Scan1) provides low potential, and the described second, the 6th thin film transistor (TFT) (T2, T6) is closed, described
Second scanning signal (Scan2) provides high potential, and the third, the 5th thin film transistor (TFT) (T3, T5) are opened, the third scanning
Signal (Scan3) provides low potential, and the 4th thin film transistor (TFT) (T4) is closed, and the voltage change of the second node (N) is extremely
Power supply positive voltage (OVDD), the voltage change of the first node (G) is to OVSS+Vth+ δ V, and wherein δ V is second node (N)
Voltage is changed to the shadow generated after power supply positive voltage (OVDD) to the voltage of first node (G) by voltage data signal (Vdata)
It rings, the Organic Light Emitting Diode (D1) shines, and flows through the electric current and the first film crystalline substance of the Organic Light Emitting Diode (D1)
The threshold voltage of body pipe (T1) is unrelated.
7. AMOLED image element driving method as claimed in claim 6, which is characterized in that the first film transistor (T1),
Second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon
Thin film transistor (TFT).
8. AMOLED image element driving method as claimed in claim 6, which is characterized in that first scanning signal (Scan1),
Second scanning signal (Scan2) and third scanning signal (Scan3) are generated by external sequence controller.
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| US10475385B2 (en) | 2018-02-28 | 2019-11-12 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | AMOLED pixel driving circuit and driving method capable of ensuring uniform brightness of the organic light emitting diode and improving the display effect of the pictures |
| CN108335671B (en) * | 2018-02-28 | 2019-10-11 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuit and driving method |
| CN110060630B (en) * | 2019-05-06 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and display panel |
| CN113284462B (en) | 2021-05-31 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel compensation circuit, method and display panel |
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| CN102651189A (en) * | 2011-05-17 | 2012-08-29 | 京东方科技集团股份有限公司 | Organic light-emitting diode driving circuit, display panel and displayer |
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