CN107079604A - Power electronics stack assemblies - Google Patents
Power electronics stack assemblies Download PDFInfo
- Publication number
- CN107079604A CN107079604A CN201480082877.8A CN201480082877A CN107079604A CN 107079604 A CN107079604 A CN 107079604A CN 201480082877 A CN201480082877 A CN 201480082877A CN 107079604 A CN107079604 A CN 107079604A
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- China
- Prior art keywords
- semiconductor module
- electric power
- stack assemblies
- electron electric
- power stack
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of power electronics stack assemblies, it includes：At least one radiator element (1), cooling agent is circulated via at least one described radiator element and at least one described radiator element includes at least one shell (5)；At least one substrate (7), it is used to be anchored at least one shell (5)；At least one semiconductor module (2), it is anchored at least one fastening base (7)；At least one driver element (15), it is anchored at least one semiconductor module (2)；At least one capacitor (16)；And bus (17).At least one described shell (5) of the radiator element (1) includes at least one fluid through-hole (6), the cooling agent is delivered in the passage being formed between the fastening base (7) and the semiconductor module (2) via at least one described fluid through-hole by means of multiple perforation (8) in the fastening base (7), and the cooling agent is directly contacted with least one semiconductor module (2).
Description
Technical field
The present invention relates to a kind of electron electric power stack assemblies, its expression characteristics is directly to cool down the semiconductor wherein accommodated
The advantage of module；That is, described semiconductor module by with the cooling agent via radiator element and aforesaid semiconductor Module cycle
Fluid is directly contacted and cooled off.
Background technology
The application field of the present invention is electronic power converter：From alternating current to alternating current, direct current to direct current, exchange
Electricity arrives direct current, and vice versa.Semiconductor module, condenser, bus and spoke for the electrical connection between different elements
Emitter is contained in sub-assembly.This configuration makes it possible to obtain compact, high performance sub-assembly, so as to realize manufacturing cost
Improve.
Using electronic power converter control motor speed and moment of torsion industry and energy industry in it is well-known；Its
It is additionally operable to control the system for being connected to power network that (such as the wind turbine generator and photovoltaic phase inverter for generating are (active and anti-
Answering property), or in alternating current system produce reactive power STATCOM (STATCOM)) in power and
Electric current, or for control DC system (for example rectifier and HVDC (high voltage direct current) Transmission system or for battery or
The control system of fuel cell) in power and electric current.
Currently, motor vehicle driven by mixed power and the importance separately through the vehicle of electricity operation constantly increase, wherein component
Size and weight and its running temperature it is all most important.
Substantially, all systems jointly share high power electronic module (such as diode and IGBT) and such as condenser
Etc. the use of energy storage elements.All these elements are attributed to the energy loss during running and produce a considerable amount of heat.
This heat must be dissipated by efficient cooling system, and the cooling system must maintain the temperature of all component under control and low
In running temperature limitation.
In the past, the ventilation type radiator with forced air stream is used；These radiators are cheap and sane, but damaged in power
Efficiency is low when consuming high.After a period of time, using the radiator of the water cooling by flowing through passage, wherein heat transport fluid is directed
By the closed conduct for being attached element to be cooled above.Although the radiator of this type is much more complex (because such spoke
Emitter needs auxiliary pumping system to move fluid, and Air-Water radiator has forced ventilation with the heat that dissipates), but these
System is more much higher than the efficiency of ventilation type radiator.
Temperature difference between institute's assembling element is inevitable in power electronics cooling system and still undesirable,
Because high-temperature difference therebetween by the ability of sub-assembly be limited to most thermal element temperature and the overall temperature of not element.
In this patent, directly cooling radiator has been developed, wherein heat transport fluid is directly contacted with element to be cooled, so that
The low thermal resistance that is attributed between element to be cooled and coolant fluid and realize more efficient heat transfer and can easily control.Borrow
Help the cooling of this type, it is possible to decrease the size of equipment.This make it possible to reduce equipment weight, energization specific density and
Cost of the reduction per power unit.
The content of the invention
The present invention relates to a kind of power electronics stack assemblies, it includes：At least one radiator element, coolant fluid
At least one described radiator element is flowed through, wherein the radiator element includes at least one shell；It is described at least one
At least one mounting substrate in shell；At least one semiconductor module, it is attached at least one mounting substrate；At least one
Driver element, it is attached at least one semiconductor module；At least one condenser；Bus, it is to link described group
The electrical component of component, wherein at least one shell of the radiator element include be used for enable flow through at least one lead to
Hole, the coolant fluid via at least one described through hole towards come across the mounting substrate and the semiconductor module it
Between passage flow through the multiple perforation formed in the mounting substrate, the coolant fluid becomes and at least one semiconductor
Module is directly contacted.
The radiator element of the electron electric power stack assemblies includes the first manifold and the second manifold, and its mode is
So that the coolant fluid is from first manifold flow to second manifold, so as to become to connect with the semiconductor module
Touch and cool down the semiconductor module.
Coolant fluid for the electron electric power stack assemblies of the target of the present invention directly cools down the semiconductor
Module, in parallel via the passage for coming across different mounting substrates and being formed between the semiconductor module that electron electric power is stacked
From first manifold flow to second manifold, maintain to flow through the equidirectional of two manifolds, and ensure most hot semiconductor
Temperature difference between module and most cold semiconductor module is less than or equal to 3 degrees Celsius.
Include quick connection for the radiator element of the electron electric power stack assemblies of the target of the present invention, for will
Coolant fluid is loaded into both the first manifold and the second manifold.
The electron electric power stack assemblies include for each semiconductor module：The mounting substrate, the installation base
Bottom is independent for each semiconductor module so that the semiconductor module is independent of one another；In the radiator element and institute
Several first o-rings between mounting substrate are stated, to ensure the contact between the mounting substrate and the radiator element
Watertightness；Several second O-rings, to ensure the watertightness of the contact between the semiconductor module and the mounting substrate.
The thickness for coming across the passage between the mounting substrate and the semiconductor module is less than 1mm, and described
Passage is designed to realize the minimum thermal resistance between each semiconductor module and the coolant fluid.
For the present invention target electronic electric power stack assemblies mounting substrate include position correspond to be used for make fluid from
The multiple perforation for the through hole that the radiator element passes through.
In the electron electric power stack assemblies for the target of the present invention, the driver passes through at least one bolt
It is attached to each semiconductor module and is attached to the radiator element by means of installing plate, its mode is so that the installing plate
The radiator element is attached to by least one bolt an end, and adhered in another end by means of bolt
To the driver.
For described electric group of the bus link sub-assembly of the electron electric power stack assemblies of the target of the present invention
Part, and be the bus with multi-layer configuration, wherein conductive plate forms parallel layers with insulation board.
The conductive plate of the bus is made up of the material selected from aluminium or copper, and the insulation board is by Ke Weila
(Kevlar) it is made, is so that possible minimum stray inductance is presented using the bus of these material manufactures in its mode.
The electron electric power stack assemblies receive the semiconductor module of the 130mm or 190mm modules selected from up to 6.5kV
Block.
It is made up of the radiator element of the electron electric power stack assemblies of the target of the present invention of extruded aluminum, so that
Reduce production cost.
The bus for the electron electric power stack assemblies of the target of the present invention is used to be connected to volume including several
The connector of exoelectron electric power stack assemblies, is enable to that two or more electron electric power stacked groups are connected in parallel
Component.
Include accommodating the framework of at least one condenser for the electron electric power stack assemblies of the target of the present invention, and
Further comprise the temp probe of the temperature of several measurement coolant fluids.
Each semiconductor module element for the electron electric power stack assemblies of the target of the present invention is visited including temperature
Head, the temp probe measures the temperature of aforesaid semiconductor module.
Brief description of the drawings
As the supplement of the description to making herein, with part of one group of schema as the description, wherein
Describe herein below：
Fig. 1 is depicted as the perspective exploded view with the electron electric power stack assemblies directly cooled down of the target of the present invention.
Fig. 2 is depicted as the perspective view of the radiator element of the electron electric power stack assemblies of the target of the present invention.
Fig. 3 describes the perspective exploded view of the radiator element with mounting substrate, semiconductor module and O-ring therebetween.
Fig. 4 a be Fig. 3 exploded views in element side view.
Fig. 4 b are the side view of the connection of the element described after mounting in Fig. 3.
Fig. 4 c are the view in transverse section of the connection of the element described after mounting in Fig. 3.
Fig. 5 a are the perspective view for the radiator element that condenser has been connected via framework.
Fig. 5 b are the front view for the element described in Fig. 5 a.
The perspective view for the radiator element that Fig. 6 a have connected for all elements in addition to framework.
Fig. 6 b are the side view for the element described in Fig. 6 a.
Fig. 6 c are the plan seen from above for the element described in Fig. 6 a and 6b.
Embodiment
The technical barrier referred in preceding section to overcome this specification, propose the present invention target, i.e., with by
In the electron electric power stack assemblies of the direct cooling of the radiator element (1) of attachment semiconductor module (2) above, its mode is
Directly contacted so that existing between aforesaid semiconductor module (2) and the coolant fluid circulated via radiator element (1).
For the present invention target electron electric power stack assemblies radiator element (1) include it is associated with single project
The first manifold (3) and the second manifold (4).
The radiator element (1) include several mounting substrates (7) by means of several fixing bolts (12) be attached to it is many
Individual shell (5), semiconductor module (2) is attached on the mounting substrate.
In the inside of multiple shells (5), radiator element (1) includes several through holes (6) for enabling flow through, its
Purpose is the first manifold of connection (3) and the second manifold (4) and semiconductor module (2).Mounting substrate (7) includes position and corresponds to use
In making multiple perforation (8) of through hole (6) that fluid passes through in radiator element (1).By means of this sub-assembly, via manifold
(3,4) coolant fluid of circulation becomes directly to contact with semiconductor module (2) during circulating via radiator element (1),
So as to cool down the semiconductor module (2).
Between radiator element (1) and mounting substrate (7), several first o-rings (9) are positioned over for enabling flow through
In the through hole (6) of radiator element (1), to ensure the watertight of the contact between mounting substrate (7) and radiator element (1)
Property, and in addition, place the second O-ring (10) to ensure the watertight of the contact between semiconductor module (2) and mounting substrate (7)
Property, thus formed for make fluid be attached to each semiconductor module (2) of radiator element (1) and mounting substrate (7) it
Between the passage that circulates.
The passage come across between mounting substrate (7) and semiconductor module (2) is to design as follows：So that ensuring half
Maximum heat transfer between coolant fluid of the conductor module (2) with contacting the semiconductor module (2).To realize this maximum heat
Transmission, it is necessary to make coolant fluid to circulate as quickly as possible；With the speed and diameter of passage, there is pressure result, institute
Pressure is stated as the flow velocity of coolant fluid increases and increases, and is declined in the diameter increase of pipeline.It means that in order to obtain
Must by the high flow rate of small diameter pipeline, pressure will height so that big expensive pump is required.
In the electron electric power stack assemblies for the target of the present invention, mounting substrate (7) and semiconductor module are come across
(2) being used between makes the passage of fluid circulation design and be characterized with the height for being consistently less than 1mm；Length will be by being pacified
The model of the semiconductor module (2) of dress is limited.This configuration makes it possible to run with 100l/min flow velocity under 2 bar pressures,
This pressure is the compromised solution that selection may be with the pump of Cost Competition.It is utilized as the electron electric power heap of the target of the present invention
Stacked group component, the thermal resistance of 5 times and 10 times smaller than air-cooling systems smaller than conventional liq cooling system of realization.
In the preferred embodiment that electron electric power stack assemblies are invented, six semiconductor modules (2) may be coupled to spoke
Transmitter element (1).
In view of in electron electric power stack assemblies, the ability of the sub-assembly is by one in semiconductor module (2)
Maximum temperature limitation, therefore in order to minimize the temperature difference being connected between the semiconductor module of radiator element (1) (2),
In the electron electric power stack assemblies for the target of the present invention, select in the same direction by the first manifold (3) and the
The flow arrangement of two manifolds (4)；That is, cold cooling agent enters via an end of the first manifold (3), becomes and semiconductor module
Block (2) is contacted, and wherein coolant fluid is heated up, and then, hot fluid is moved back in entrance to set terminal via the second manifold (4)
Go out.By means of this flow arrangement, in the electron electric power stack assemblies for the target of the present invention, radiator element is connected to
(1) the temperature difference between different semiconductor modules (2) is limited to maximum 3 degree.
In the electron electric power stack assemblies for the target of the present invention, make to flow through the direction of manifold in the same direction and
The configuration of use may combine the more preferable result of (configuration for example in the opposite direction) generation than other, because it causes the first discrimination
Pressure between pipe (3) and the second manifold (4) is balanced naturally, so that the speed in passage can be balanced, causes difference
Balance between the temperature of semiconductor module (2).
Radiator element (1) for the electron electric power stack assemblies of the target of the present invention is designed for standard
IHM 130mm, IHMB 130mm, IHM 190mm and IHMB 190mm seal boxes (capsule) and voltage are up to the half of 6.5kV
Conductor module (2) is attached thereto；These semiconductor modules (2) are well known in the art.
Radiator element (1) includes quick connection (13), for coolant fluid to be loaded into the first manifold (3) and second
In both manifolds (4).
In a preferred embodiment of the invention, radiator element (1) is made up of extruded aluminum, and by means of mechanical processing technique
Form the through hole of fluid.
It is included in several monitoring temperatures in radiator element (1) for the electron electric power stack assemblies of the target of the present invention
Pop one's head in (14a, 14b), the probe measurement fluid intake and outlet temperature.
In the electron electric power stack assemblies for the target of the present invention, mounting substrate (7) can be with semiconductor module (2) one
Rise and independently dismantle, be enable to replace each semiconductor module (2) (if necessary to replace).This measure makes it possible to simplify
And reduce safeguard and repair, reduce replace semiconductor module necessary to the time, make equipment for a long time can not run lack
Point is preferably minimized.
Each semiconductor module (2) for the electron electric power stack assemblies of the target of the present invention is adhered to by 6 bolts
To mounting substrate (7).By the mounting substrate (7) of a semiconductor module (2) and the fixing semiconductor module formed it is each
It is overall to be attached to radiator element (1) further through 6 bolts；It is real between different semiconductor modules (2) by means of the connection
Now such disclosed mechanical independence.
Each semiconductor module (2) for the electron electric power stack assemblies of the target of the present invention is included by six bolts
In one (semiconductor module (2) is attached to mounting substrate (7) by means of the bolt) be attached to each semiconductor module (2)
Temp probe (21).
The electron electric power stack assemblies include being configured to PCB at least one driver (15), so that partly leading
Module (2) can be run；That is, described driver is signal conditioner, because the optical signalling that control system is sent is by driving
Device adjusts and is transformed into electric signal, and electric signal is the type required for semiconductor module (2) is run.
Driver (15) is attached to installing plate (11) by means of bolt, and the plate is attached to radiation by means of two bolts
Device element (1).
Include the bus (17) that its electrical component links together for the electron electric power stack assemblies of the target of the present invention；
The bus (17) is with the multi-layer configuration by several conductive plates (18) and the parallel layers of several insulation boards (19) formation.
In Fig. 1, it is observed that the configuration of parallel layers；It is described to be configured to：Insulation board (19)-conductive plate (18)-double insulation plate (19)-
Conductive plate (18)-insulation board (19).
Require that conductive plate (18) is by selected from aluminium or copper according to the current density of the final application of electron electric power stack assemblies
Material be made.
In a preferred embodiment of the invention, insulation board (19) is made up of Ke Weila, and Ke Weila is that electrical conductivity is low-down
Material；For this reason, the thickness of this material can be very small, so as to reduce the region between conductive plate (18).In this way,
Stray inductance between electrical component is as low as possible, and the overvoltage stress in semiconductor module (2) is minimized.
Bus (17) includes several connectors for being used to be connected to other electron electric power stack assemblies and (not retouched in the drawings
Paint) so that being connected in parallel for multiple electron electric power stack assemblies is realized, therefore acquisition has the three of 2 and 3 voltage levels
Phase bridge is configured, i.e. the configuration of the parallel configuration or " back-to-back " type of the three-phase bridge at 2 or 3 voltage levels.
Finally, electron electric power stack assemblies include framework (20), in a preferred embodiment of the invention, and framework (20) holds
Receive multiple condensers (16), its mode is causes framework (20) to be used for semiconductor being in radiator element described above (1)
Side in the shell (5) of module (2) is located in radiator element (1) on opposed side.
In this section, the preferred embodiments of the present invention have been described；Further embodiment can be exported from this paper content；
Therefore, true scope of the invention is provided by claims in this document.
Commercial Application
This sub-assembly is in a large amount of industry such as expressed " background technology " part；In all that industry,
Power electronics all has importance.
In the above description, using elements below symbol：
1. radiator element,
2. semiconductor module,
3. the first manifold,
4. the second manifold,
5. shell,
6. for the through hole of fluid,
7. mounting substrate,
8. perforation,
9. first o-ring,
10. the second O-ring,
11. installing plate,
12. fixing bolt,
13. quick connector,
14a, 14b. fluid temperature (F.T.) are popped one's head in,
15. driver,
16. condenser,
17. bus,
18. conductive plate,
19. insulation board,
20. framework, and
21. semiconductor module temp probe.
Claims (15)
1. a kind of electron electric power stack assemblies, it is characterised in that the electron electric power stack assemblies include
At least one radiator element (1), coolant fluid flows through at least one described radiator element, wherein the radiator
Element (1) includes at least one shell (5)；
At least one mounting substrate (7) at least one shell (5)；
At least one semiconductor module (2), it is attached at least one mounting substrate (7)；
At least one driver element (15), it is attached at least one semiconductor module (2)；
At least one condenser (16)；
Bus (17), its electrical component to link the sub-assembly；
At least one described shell (5) of wherein described radiator element (1) includes at least one through hole (6), the cooling agent
Fluid is logical between the mounting substrate (7) and the semiconductor module (2) towards coming across via at least one described through hole
Road flows, and the coolant fluid becomes directly to contact with least one described semiconductor module (2).
2. electron electric power stack assemblies according to claim 1, it is characterised in that the radiator element (1) includes
First manifold (3) and the second manifold (4), its mode are to cause the coolant fluid from first manifold (3) via appearance
The passage between the mounting substrate (7) and the semiconductor module (2) flow to second manifold (4), so that
Become that the semiconductor module is contacted and cooled down with the semiconductor module (2).
3. electron electric power stack assemblies according to claim 2, it is characterised in that flow through first manifold (3) and
The coolant fluid of second manifold (4) flows through first manifold and second manifold in the same direction, from
And directly cool down the semiconductor module (2).
4. the electron electric power stack assemblies according to preceding claims, it is characterised in that radiator element (1) bag
Quick connector (13) is included, for coolant fluid to be loaded into both described first manifold (3) and second manifold (4)
In.
5. the electron electric power stack assemblies according to preceding claims, it is characterised in that each semiconductor module (2) bag
Include：
The mounting substrate (7), the mounting substrate (7) is independent for each semiconductor module (2) so that described partly to lead
Module is independent of one another；
Several first o-rings (9) between the radiator element (1) and the mounting substrate (7), to ensure the installation
The watertightness of contact between substrate (7) and the radiator element (1)；
Several second O-rings (10), to ensure the water of the contact between the semiconductor module (2) and the mounting substrate (7)
Close property；
The passage wherein come across between the mounting substrate (7) and the semiconductor module (2) has the thickness for being less than 1mm
Degree, and be designed to realize the minimum thermal resistance between each semiconductor module (2) and the coolant fluid.
6. electron electric power stack assemblies according to claim 5, it is characterised in that the mounting substrate (7) includes position
Put multiple perforation (8) corresponding to the through hole (6) for being used to make fluid in the radiator element (1) pass through.
7. the electron electric power stack assemblies according to preceding claims, it is characterised in that the driver (15)：
Each power module (2) is attached to by least one bolt, and
The radiator element (1) is attached to by means of installing plate (11), its mode is so that the installing plate is an end
Place is attached to the radiator element (1) by least one bolt, and described in being attached to by means of bolt in another end
Driver (15).
8. the electron electric power stack assemblies according to preceding claims, it is characterised in that link the institute of the sub-assembly
The bus (17) for stating electrical component is the bus (17) with multi-layer configuration, wherein conductive plate (18) and insulation board (19) formation
Parallel layers.
9. electron electric power stack assemblies according to claim 8, it is characterised in that：
The conductive plate (18) is made up of the material selected from aluminium or copper, and
The insulation board (19) is made up of Ke Weila,
Possible minimum stray inductance wherein is presented using the bus (17) of these material manufactures.
10. the electron electric power stack assemblies according to preceding claims, it is characterised in that the electron electric power stacked group
Component receives to be selected from 130mm or 190mm modules and up to 6.5kV semiconductor module.
11. the electron electric power stack assemblies according to preceding claims, it is characterised in that the radiator element (1)
It is made up of extruded aluminum, so as to reduce production cost.
12. the electron electric power stack assemblies according to preceding claims, it is characterised in that the bus (17) includes number
The individual connector for being used to be connected to extra electron electric power stack assemblies, is enable to that some electron electric powers are connected in parallel
Stack assemblies.
13. the electron electric power stack assemblies according to preceding claims, it is characterised in that it includes accommodating at least one
The framework (20) of condenser (16).
14. the electron electric power stack assemblies according to preceding claims, it is characterised in that it is included in the radiator
Several temp probes (14a, 14b) in element (1), the temp probe measures the temperature of the coolant fluid.
15. the electron electric power stack assemblies according to preceding claims, it is characterised in that it is in the semiconductor module
(21) place includes several temp probes that the semiconductor module (2) are attached to by least one bolt, and the temperature is visited
The temperature of head measurement aforesaid semiconductor module (2).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/ES2014/000188 WO2016071538A1 (en) | 2014-11-04 | 2014-11-04 | Power electronics stack assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107079604A true CN107079604A (en) | 2017-08-18 |
Family
ID=55908632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480082877.8A Pending CN107079604A (en) | 2014-11-04 | 2014-11-04 | Power electronics stack assemblies |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107079604A (en) |
| WO (1) | WO2016071538A1 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037426A (en) * | 2008-04-21 | 2011-04-27 | 固核电脑公司 | A case and rack system for liquid submersion cooling of electronic devices connected in an array |
| US20120188717A1 (en) * | 2010-07-23 | 2012-07-26 | Adam Albrecht | Power electronics assembly for a magnetic resonance device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7403392B2 (en) * | 2006-05-16 | 2008-07-22 | Hardcore Computer, Inc. | Liquid submersion cooling system |
| US7983040B2 (en) * | 2008-10-23 | 2011-07-19 | International Business Machines Corporation | Apparatus and method for facilitating pumped immersion-cooling of an electronic subsystem |
| US8184436B2 (en) * | 2010-06-29 | 2012-05-22 | International Business Machines Corporation | Liquid-cooled electronics rack with immersion-cooled electronic subsystems |
-
2014
- 2014-11-04 WO PCT/ES2014/000188 patent/WO2016071538A1/en active Application Filing
- 2014-11-04 CN CN201480082877.8A patent/CN107079604A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102037426A (en) * | 2008-04-21 | 2011-04-27 | 固核电脑公司 | A case and rack system for liquid submersion cooling of electronic devices connected in an array |
| US20120188717A1 (en) * | 2010-07-23 | 2012-07-26 | Adam Albrecht | Power electronics assembly for a magnetic resonance device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016071538A1 (en) | 2016-05-12 |
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Application publication date: 20170818 |