CN107043925A - Molded article having functional layer, method for producing same, and use thereof - Google Patents
Molded article having functional layer, method for producing same, and use thereof Download PDFInfo
- Publication number
- CN107043925A CN107043925A CN201610816001.2A CN201610816001A CN107043925A CN 107043925 A CN107043925 A CN 107043925A CN 201610816001 A CN201610816001 A CN 201610816001A CN 107043925 A CN107043925 A CN 107043925A
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- CN
- China
- Prior art keywords
- plasma
- mechanograph
- precursor
- gas
- coating
- Prior art date
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- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000002346 layers by function Substances 0.000 title abstract description 7
- 239000007789 gas Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 35
- 239000002243 precursor Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 8
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 8
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical group C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- -1 polysiloxanes Polymers 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000010891 electric arc Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 239000012943 hotmelt Substances 0.000 claims description 4
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 150000008282 halocarbons Chemical class 0.000 claims description 3
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 claims description 3
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000005299 abrasion Methods 0.000 claims 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims 2
- 235000003642 hunger Nutrition 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 238000009958 sewing Methods 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 239000007921 spray Substances 0.000 claims 2
- 239000003570 air Substances 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 210000001367 artery Anatomy 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 238000010422 painting Methods 0.000 claims 1
- 230000035935 pregnancy Effects 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 238000006116 polymerization reaction Methods 0.000 description 9
- 239000000178 monomer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000003678 scratch resistant effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010022998 Irritability Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000181 anti-adherent effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- IQSBKDJPSOMMRZ-UHFFFAOYSA-N ethenyl(methyl)silane Chemical compound C[SiH2]C=C IQSBKDJPSOMMRZ-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention relates to a molded article, the surface of which is at least partially covered by a functional layer, to a method for producing the molded article, and to the use thereof; the invention further relates to a system, in particular a tool, comprising a moulding according to the invention, which has an increased stability against wear forces.
Description
Technical field
The present invention relates to the mechanograph that a kind of surface covers functional layer at least in part, the manufacture method of the mechanograph,
And application thereof；Especially the present invention relates to a kind of instrument, it is coated with plasma polymer functional layer, and it, which has, is directed to such as institute
The anti-sticking action of the adherence of adhesive as the thermosol adhesive and dispersing binder of meaning.It the invention also relates to one
Kind of system, a kind of particularly instrument, it has enhanced stability of confrontation friction effect power.
Background technology
Mechanograph or target part known in the state of the art with plasma polymer functional layer.In Germany Patent document DE
The target part of silvery has been described in 42 16 999 A1, it has so-called plasma-coated.
Due to gradually changing for technological parameter, coating has Rotating fields, the Rotating fields comprising coupling layer, penetration barrier layer with
And the scratch resistant face seal portion of hard.
In order to manufacture scratch resistant layer, the mixture being made up of oxygen and hexamethyldisiloxane (HMDSO) is used.
In addition, disclosing thin by plasma polymerization effect production in the A1 of Germany Patent document DE 195 43 133
, the method for firm hydrophobic polymerizable layer.Point out vinyl methyl silane and the vinyltrimethoxy silane use such as monomer
In plasma polymerization effect, they are the monomers with least one group low to oxygen affinity, and they can be to the greatest extent
Plasma polymerization in the case of possibility is structure-preserved.
The monomer can add the gas that can not polymerize as such as inert gas, nitrogen or hydrogen as auxiliary
Gas or vector gas.Such auxiliary gas or vector gas are conducive to improving the homogeneity of plasma and improve gas phase
In pressure.
The shortcoming of coating disclosed in DE 195 43 133 is easily removed from base material as described above particularly in it.
In addition, the A1 of Germany Patent document DE 197 48 240 are described by way of plasma polymerization to metal base
The method of corrosion-resistant finishes, wherein, before the coating of plasma polymerization is applied, by metal base first in the first pretreatment
Mechanically, chemically and/or electrochemically polished in step, and the plasma activation in the second processing step.
Disclose using hydrocarbon compound and/or organo-silicon compound as plasma polymer chief component, its
In highlight particularly preferably use hexamethyldisiloxane and hexamethyl cyclotrisiloxane.
Used hexamethyldisiloxane in example in above-mentioned patent document, wherein can using mixture of oxygen or nitrogen as
Additional or auxiliary gas.
Details as the ratio of such as monomer and oxygen can not be inferred in above-mentioned file.In addition, the patent document
It is also undisclosed to be particularly easy to the surface of cleaning in order to obtain and how to apply plasma polymerization coating or by plasma polymerization
Which base material coating is applied on.
The content of the invention
Functional layer, the i.e. mechanograph with functional coating, particularly instrument are carried it is an object of the invention to provide one kind,
And the manufacture method of the moulded parts of this functional coating, the coating of the moulded parts has anti-adhesion characteristic, especially with respect to
Adhesive, such as relative to so-called hotmelt or dispersing binder, and with anticorrosion properties, so as to minimum
Change the stopping for producing for instrument clean and (remove attachment residue) or damaged for replacing or shabby in the industrial production
The machine time.
Purpose is solved by the moulded parts that can be produced in following method：
I. by base material or moulded parts introduce and be positioned at ADP (atmospheric plasma) system, NP (low pressure plasma) system
Unite or in PACVD (plasma active chemical vapor deposition) system；
Ii. the mechanograph of coating is handled under the plasma condition of the plasma of each selection so that with wear-resistant
The non-adhering coating of property is at least formed at least a portion on the surface of base material/moulded parts.
Almost all establish plasma technology in all technical fields in recent years.Accordingly, for various embodiments, portion
It there is known extensive prior art with dividing.Except to surface fine purification and activation, especially for the tune of surface characteristic
Whole, plasma technology applies also for the coating on surface, for example, coat hydrophily or hydrophobic layer, the layer for reducing friction or stop
Layer.On the component or the coating of workpiece of variety classes (base material), latter use is special for the purpose for solving the invention described above
It is important.
According to the present invention plasma asistance coating process can in particular upon three kinds of different method variants reality
Apply, including low pressure method (low pressure plasma NP), normal pressure method (atmospheric plasma ADP) and so-called PACVD (wait from
Daughter activity chemical vapor deposition) method.
In the case of low pressure method, supplied, for example, radiated and excited gas by UV by energy in a vacuum.By
This, in addition to electronics or other active particles, generates the energetic ion to form plasma.Use this glow discharge class
The low pressure plasma of type is used to coat.Herein, 50-1000mm scopes are produced in 1-100Pa pressure range
(Ausdehnung) scattered gas discharge (diffuse Gasentladungen).In the extensive pressure from low pressure to normal pressure
Applying arc discharge during power is interval, and its local plasma for being generally suitable for producing several millimeters of scopes (Ausdehnung)
Body.By these thermal regions, either circulate gas to be processed or by working gas jet for the conversion of gas
Energy is transported to treatment region from electric arc (referring to the modification under normal pressure).When supplying active gases, active gases is in region of discharge
Domain is decomposed, and the generation layer deposition on the surface in may belong to the surrounding environment of workpiece.The gas of ionization and base material
Surface is chemically reacted.Therefore, it is possible to effectively adjust or coating surface.
In the case of normal pressure modification, by the high pressure excited gas under environmental pressure so that light plasma.Deng from
Daughter is discharged under conditions of applied compression air from nozzle.
By the conversion of technological parameter, such as processing speed and the change with the distance of substrate surface, such as in low pressure method
In the case of, result may be impacted in a different direction.
In the case of producing plasma in atmospheric pressure scope, main to use barrier discharge or corona discharge, it makes
Although obtaining between electronics and heavy particle, collision frequency is high, also allows the Energy distribution for producing non-thermal.In the situation of barrier discharge
Under, by being automatically stopped for electric discharge, energy is introduced during about 5-50ns short time window, and corona discharge is by tip
Electrode (spitzer Elektroden) or casing electrode (kantiger Elektroden) produce very uneven electric field.
Under both of these case, only temporarily to electrode supplying energy so that can only occur a small amount of collision.
(English is plasma-enhanced chemical to the chemical vapor deposition-PACVD of plasma enhancing
Vapour deposition, PECVD) be chemical vapor deposition (CVD) special shape, in this case, chemical deposition is obtained
The support of plasma.Can directly at the base material to be coated (direct plasma method) or in separated chamber (distal end etc.
Ion method) light plasma.In CVD, the molecule of reacting gas decomposes (spalling) by the heat that outside applies, and
Occur the energy release of subsequent chemical reaction, and in PECVD, this task is undertaken by the acceleration electronics in plasma.Remove
Outside the free radical formed in this way, ion is also created in plasma, it causes on base material together with free radical
Layer deposition.Therefore the gas temperature in plasma generally only rises hundreds of degrees Celsius, so that, it can also be applied compared with CVD
Cover thermo-sensitive material.
In the case of direct plasma method, in the base material to be coated and to establishing highfield between electrode, by this
Electric field lights plasma.In the case of remote plasma method, plasma is arranged to not contact directly with base material.From
And the advantage of the selective stimulating to the independent component of process gas mixture is realized, and base material table is reduced by ion
The possibility that the plasma in face is damaged.Can also by convert the radiation of electromagnetic field and irritability/capacitively produce plasma
Body
Within the framework of the invention, low pressure plasma or atmospheric plasma are applied under the implementation modification provided,
Wherein preferred atmospheric plasma.This plasma can show as the commercially available equipment for plasma treatment, for example, make
Make business's Pu Sima plasma treatments Co., Ltd (Germany, Shi Taiyinhagen) (Plasmatreat GmbH, Steinhagen
(DE) plasma processor device A S 400 (Plasmatreater AS 400)).
In the case where plasma polymerization is acted on, under current control condition, work is activated by plasma first
Gaseous state organic precursor compounds (precursor monomer) in skill room.The molecule of the ionization produced by activation shape in the gas phase
Into cluster or the first molecule fragment of the form of chain.The subsequent condensation of these fragments on substrate surface is in base material temperature
Polymerization is produced under the influence of degree, electron bombardment and bombardment by ions, and may eventually lead to the formation of confining bed.
It has been surprisingly found that preferably in the case where using hydrocarbon and/or siloxanes as precursor, by mechanograph
Plasma treatment result in used in coating on mechanograph, the coating have relative to particularly hotmelt and
The desired anti-adhesive effect of adhesive as dispersing binder, and help the workpiece coated to obtain the increasing to antifraying force
Strong protection.
In this case, (1 to 10 carbon atom) saturated or unsaturated hydrocarbon of short chain is preferably in above-mentioned hydrocarbon precursor,
Wherein it is particularly preferably methane, ethane and acetylene (acetylene).
In addition, being preferably halogenated hydrocarbons, particularly saturated or unsaturated, ring-type fluorohydrocarbon, such as hexafluoro in hydrocarbon
Ethane.In addition, cyclic hydrocarbon is particularly preferably octafluorocyclobutane and perfluoro-cyclopentene.
In the case of siloxanes preferred poly- (dimethyl siloxane) (Poly (dimethylsiloxane)), wherein also wrapping
Include cyclosiloxane as such as hexamethyl cyclotrisiloxane.Six are particularly preferably in the case of poly- (dimethyl siloxane)
The silicon ether of methyl two.
The mixture of above-mentioned precursor can additionally be used.
According to each precursor used, it is advantageous that heated substrate, i.e. mechanograph or instrument in coating.
The gas used as process gas or ionized gas is equally known in the prior art.They include
Gas or inert gas as argon gas, oxygen and/or nitrogen, or the gas mixing as air or compressed air
Thing, or nitrogen and hydrogen mixture (admixture of gas of 95% nitrogen and 5% hydrogen).
Gas molecule is ionized in (vacuum) processing equipment, wherein obtaining plasma by electric field.Preferably borrow
Help microwave radiation and high-frequency ac voltage to obtain for handling the plasma of synthetic material, and enter to the base material that metal is made
During row plasma coating, it is preferred to use pulsed dc plasma.
Embodiment
Following illustrative plasma parameter is given respectively for carbon-based and siloxy group coating plasma
State：
A) device parameter
Tungsten and copper into free-jet nozzle, d~4mm
Pulse AC arc discharges (alternating current arc electric discharge) with destination channel：
Effective power~300W (effective voltage~1kV, effective current 0.3A)
The pulse of each cycle~2, peak value~3.8kV, the μ s of pulsewidth~1.4
About +/- 25% (can be achieved in the case of using the equipment of plasma processor AS 400) of allowable deviation
Plasma voltage：280V
Plasma frequency：21kHz
The plasma cycle time：10-20%
B) for the illustrative layers formula of organic carbon based layer：
Ionized gas：Nitrogen (~1500 1/h)
Precursor：Acetylene (~38 1/h), 1- points-supply (1-Punkt-Einspeisung)
The distance of jet expansion-base material：5-10mm
The road spacing of (meander-like) coating of plane：1-4mm (per thickness degree)
Jet velocity：5-10m/min (per thickness degree)
Optionally：For example (Soforteinsatz) is hardened in 200 DEG C of degree annealing 1.5h to improve adherence/rapid surface.
C) for the illustrative layers formula of siloxanes basic unit：
Ionized gas：Compressed air (~1500 1/h)
Precursor：Hexamethyldisiloxane (~30g/h), 1- points-supply
The distance of jet expansion-base material：5-10mm；
The road spacing of (meander-like) coating of plane：1-4mm (per thickness degree)
Jet velocity：20-80m/min (per thickness degree)
Optionally：For example hardened in 200 DEG C of degree annealing 1.5h with improving adherence/rapid surface.
Claims (33)
1. there is a kind of mechanograph, the mechanograph non-sticky for the anti-abrasion of hotmelt and/or dispersing binder to apply
Layer, the mechanograph can be manufactured as follows：
Under conditions of it there is process gas and ionized gas, exist from including the short hydrocarbon with 1 to 10 carbon atom
Under conditions of the organic precursor or organosilicon precursor selected in the group of polysiloxanes, with tungsten copper free-jet nozzle
Handled in plasma processing using plasma in the mechanograph of non-coating, the equipment：The tungsten copper free jet spray
Mouth is a diameter of~4mm, wherein the pulse ac arc discharge with the destination channel with~300W effective power, effective power
Effective voltage be~1kV, effective current is 0.3A；And the pulse of each cycle~2, wherein crest voltage are~3.8kV and arteries and veins
A width of~1.4 μ s, allowable deviation is +/- 25%；And plasma voltage is 280V, plasma frequency 21KHz, plasma cycle
Time (plasma circulation time) 10-20%.
2. mechanograph according to claim 1, it is characterised in that the mechanograph is instrument.
3. mechanograph according to claim 2, it is characterised in that the instrument is lid arrangement or sewing cutter.
4. the mechanograph according to one of claims 1 to 3, it is characterised in that the plasma is low pressure plasma
Or atmospheric plasma, or it is embodied as the coating with plasma auxiliary chemical vapor deposition.
5. the mechanograph according to one of Claims 1-4, it is characterised in that the organic precursor be short chain saturation or
Undersaturated aliphatic hydrocarbon precursor.
6. mechanograph according to claim 5, it is characterised in that select hydrocarbon from the group including methane, ethane and acetylene
Precursor.
7. the mechanograph according to one of Claims 1-4, it is characterised in that the organic precursor is saturation or insatiable hunger
The halogenated hydrocarbons of sum.
8. mechanograph according to claim 7, it is characterised in that from including perfluoroethane, octafluorocyclobutane and octafluoro ring
Mechanograph is selected in the group of pentane.
9. the mechanograph according to one of Claims 1-4, it is characterised in that the organosilicon precursor is poly- (dimethyl-silicon
Oxygen alkane).
10. the mechanograph according to one of Claims 1-4, it is characterised in that from hexamethyl cyclotrisiloxane or hexamethyl
The organosilicon precursor is selected in two silicon ether groups.
11. the mechanograph according to one of claim 1 to 10, it is characterised in that from including oxygen, nitrogen, gas mixing
Ionized gas is selected in the group of thing and inert gas.
12. mechanograph according to claim 11, it is characterised in that from including air, compressed air and nitrogen and hydrogen mixture
Admixture of gas is selected in the group of body.
13. mechanograph according to claim 11, it is characterised in that the inert gas is argon gas.
14. the mechanograph according to claim 1 and 11, it is characterised in that the ionized gas is nitrogen, and with~
1500l/h speed is fed to plasma chamber, and precursor is acetylene (acetylene), and the precursor is supplied with~38l/h speed
Into plasma chamber, wherein, the distance from jet expansion to base material is embodied as in jet speed in the range of 5 to 10mm
Plane, meander-like in the case of spending in the range of 5 to 10m/min has the painting of the thickness degree in the range of from 1 to 4mm
Layer.
15. the mechanograph according to one of claim 1 and 12, it is characterised in that the ionized gas is compressed air,
And be supplied to~1500l/h speed in plasma chamber, and the precursor is hexamethyldisiloxane, the precursor with~
30g/h speed is supplied in plasma chamber, wherein the distance from jet expansion to base material is in the range of 5 to 10mm, and
It is embodied as plane, meander-like with from 1 to 4mm's in the case where jet velocity is in the range of 20 to 80m/min
In the range of thickness degree coating.
16. mechanograph according to claim 1, it is characterised in that carried out in further reactions steps at 200 DEG C
Last 1.5h annealing.
17. a kind of method for manufacturing mechanograph, the mechanograph is having for hot melt according to one of claim 1 to 16
The non-stick coating of the anti-abrasion of adhesive and/or dispersing binder, methods described is comprised the following steps that：
Under conditions of it there is process gas and ionized gas, exist from including the short hydrocarbon with 1 to 10 carbon atom
Under conditions of the organic precursor or organosilicon precursor selected in the group of polysiloxanes, with tungsten copper free-jet nozzle
Handled in plasma processing using plasma in the mechanograph of non-coating, the equipment：The tungsten copper free jet spray
A diameter of~4mm of mouth, wherein the pulse ac arc discharge with the destination channel with~300W effective power, Effective power
The effective voltage of rate is~1kV, and effective current is 0.3A；The pulse of each cycle~2, wherein crest voltage~3.8kV and pulsewidth
For~1.4 μ s, allowable deviation is +/- 25%；And plasma voltage is 280V, plasma frequency 21KHz, during plasma cycle
Between (plasma circulation time) 10-20%.
18. method according to claim 17, it is characterised in that the plasma used in the process is low pressure etc.
Gas ions or atmospheric plasma, or implement coating by plasma auxiliary chemical vapor deposition.
19. the method according to claim 17 or 18, it is characterised in that the organic precursor is saturation or the insatiable hunger of short chain
The aliphatic hydrocarbon precursor with 1 to 10 carbon atom of sum.
20. method according to claim 19, it is characterised in that select hydrocarbon from the group including methane, ethane and acetylene
Precursor.
21. the method according to claim 17 or 18, it is characterised in that the organic precursor is saturated or unsaturated
Halogenated hydrocarbons.
22. method according to claim 21, it is characterised in that from including perfluoroethane, octafluorocyclobutane and octafluoro ring
The precursor is selected in the group of pentane.
23. the method according to claim 17 or 18, it is characterised in that the organosilicon precursor is poly- (dimethyl silica
Alkane).
24. the method according to claim 17 or 18, it is characterised in that the organosilicon precursor is the silica of pregnancy basic ring three
Alkane or hexamethyldisiloxane.
25. the method according to one of claim 17 to 24, it is characterised in that from including oxygen, nitrogen, admixture of gas
Ionized gas is selected with the group of inert gas.
26. method according to claim 25, it is characterised in that from including air, compressed air and nitrogen hydrogen mixeding gas
Group in select admixture of gas.
27. method according to claim 25, it is characterised in that the inert gas is argon gas.
28. the method according to claim 17,20 and 25, it is characterised in that the ionized gas is nitrogen, and with
~1500l/h speed is fed to plasma chamber, and precursor is acetylene, the precursor with~38l/h speed be supplied to etc. from
In seed cell, wherein, the distance from jet expansion to base material in the range of 5 to 10mm, and be embodied as jet velocity 5 to
In the case of in the range of 10m/min it is plane, meander-like have from 1 to 4mm in the range of thickness degree coating.
29. the method according to claim 17,24 and 26, it is characterised in that the ionized gas is compressed air, and
And be supplied to~1500l/h speed in plasma chamber, and the precursor is hexamethyldisiloxane, the precursor is with~30g/
H speed is supplied in plasma chamber, wherein the distance from jet expansion to base material is in the range of 5 to 10mm, and is implemented
For in jet velocity in the range of 20 to 80m/min in the case of plane, meander-like there is scope from 1 to 4mm
The coating of interior thickness degree.
30. method according to claim 17, it is characterised in that carried out in further reactions steps at 200 DEG C
Last 1.5h annealing.
31. a kind of system of the mechanograph comprising according to one of claim 1 to 16.
32. system according to claim 31, it is characterised in that the system is presented as pressure laminating tool or sewing
Machine.
33. the purposes of the mechanograph according to one of claim 1 to 16, is laminated or produces what is be sewed and connected as pressure
Measure.
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| DE102015115167.7A DE102015115167B4 (en) | 2015-09-09 | 2015-09-09 | Shaped body comprising a functional layer, process for its preparation and its use |
| DE102015115167.7 | 2015-09-09 |
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| DE102016226191B4 (en) * | 2016-12-23 | 2018-12-13 | HS-Group GmbH | Method and device for producing a substrate coated with a barrier layer and a protective layer |
| US10973569B2 (en) * | 2017-09-22 | 2021-04-13 | Covidien Lp | Electrosurgical tissue sealing device with non-stick coating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191174A (en) * | 1996-11-12 | 1998-08-26 | 全培赫 | Method of enhancing releasing effect of mold using low temperature plasma processes |
| CN1210901A (en) * | 1997-06-26 | 1999-03-17 | 通用电气公司 | Protective Coating Formed by Arc Plasma High Speed Deposition |
| DE102014100385A1 (en) * | 2014-01-15 | 2015-07-16 | Plasma Innovations GmbH | Plasma coating method for depositing a functional layer and separator |
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| DE4216999C2 (en) | 1992-05-22 | 1996-03-14 | Fraunhofer Ges Forschung | Process for the surface coating of silver objects and protective layer produced by this process |
| DE19543133C2 (en) | 1995-11-18 | 1999-05-06 | Fraunhofer Ges Forschung | Process for producing highly hydrophobic polymer layers by means of plasma polymerization |
| DE19826259A1 (en) * | 1997-06-16 | 1998-12-17 | Bosch Gmbh Robert | Plasma CVD process application |
| DE19748240C2 (en) | 1997-10-31 | 2001-05-23 | Fraunhofer Ges Forschung | Process for the corrosion-resistant coating of metal substrates by means of plasma polymerization and its application |
| GB0211354D0 (en) * | 2002-05-17 | 2002-06-26 | Surface Innovations Ltd | Atomisation of a precursor into an excitation medium for coating a remote substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1191174A (en) * | 1996-11-12 | 1998-08-26 | 全培赫 | Method of enhancing releasing effect of mold using low temperature plasma processes |
| CN1210901A (en) * | 1997-06-26 | 1999-03-17 | 通用电气公司 | Protective Coating Formed by Arc Plasma High Speed Deposition |
| DE102014100385A1 (en) * | 2014-01-15 | 2015-07-16 | Plasma Innovations GmbH | Plasma coating method for depositing a functional layer and separator |
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