CN107026075A - The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting - Google Patents
The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting Download PDFInfo
- Publication number
- CN107026075A CN107026075A CN201610800022.5A CN201610800022A CN107026075A CN 107026075 A CN107026075 A CN 107026075A CN 201610800022 A CN201610800022 A CN 201610800022A CN 107026075 A CN107026075 A CN 107026075A
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- ion implantation
- sic
- laser annealing
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 238000005224 laser annealing Methods 0.000 title claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000005468 ion implantation Methods 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910008599 TiW Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 238000004886 process control Methods 0.000 abstract description 5
- 230000003213 activating effect Effects 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明公开了采用离子注入增强激光退火制备碳化硅欧姆接触的方法，包括如下步骤：步骤一：在SiC所需形成欧姆接触的部位进行离子注入；步骤二：在所述SiC晶圆表面淀积欧姆接触金属；步骤三：采用激光对欧姆接触金属进行辐照以制备欧姆接触；采用离子注入增加SiC欧姆接触区域的掺杂浓度，通过激光退火在激活注入离子的同时在SiC上形成欧姆接触。通过该方法降低了激光退火工艺形成欧姆接触的工艺控制问题，降低了欧姆接触电阻率，从而提高了SiC器件的性能。
The invention discloses a method for preparing silicon carbide ohmic contacts by using ion implantation enhanced laser annealing, which comprises the following steps: step 1: performing ion implantation on the SiC required to form ohmic contacts; step 2: depositing Ohmic contact metal; Step 3: use laser to irradiate the ohmic contact metal to prepare ohmic contact; use ion implantation to increase the doping concentration of the SiC ohmic contact area, and form an ohmic contact on SiC while activating the implanted ions by laser annealing. The method reduces the process control problem of the ohmic contact formed by the laser annealing process, reduces the resistivity of the ohmic contact, and thus improves the performance of the SiC device.
Description
技术领域technical field
本发明涉及碳化硅器件制造领域，具体涉及采用离子注入增强激光退火制备碳化硅欧姆接触的方法。The invention relates to the field of silicon carbide device manufacturing, in particular to a method for preparing silicon carbide ohmic contacts by using ion implantation enhanced laser annealing.
背景技术Background technique
作为第三代半导体材料，碳化硅(SiC)具有高的禁带宽度(2.4-3.3eV)、高的热导率(5-7W·cm-1K-1)、高的临界击穿电场(＞2×106V·cm-1)、与硅(Si)相当的电子迁移率、化学性质稳定、高硬度、耐摩擦以及抗辐射等一系列的优点，在高温、高频、大功率等方面有着广泛的应用。As a third-generation semiconductor material, silicon carbide (SiC) has a high band gap (2.4-3.3eV), high thermal conductivity (5-7W cm-1K-1), and a high critical breakdown electric field (> 2×106V cm-1), electron mobility equivalent to silicon (Si), stable chemical properties, high hardness, friction resistance and radiation resistance, etc., have a wide range of advantages in high temperature, high frequency, high power, etc. Applications.
欧姆接触是半导体器件制备过程中的一项关键工艺，它的目的是制备在金半接触部位形成线性的电流与电压关系，并且保证接触电阻足够小以至于不影响器件的导通特性。碳化硅材料上的欧姆接触一般在金属淀积完成后，采用高温退火方法制备。由于碳化硅器件上欧姆接触制备需要高温退火过程，而高温退火过程会对半导体器件其他部位的材料产生消极影响(如：肖特基金属，金属电极等)，因此为了降低高温退火的影响，欧姆接触工艺需要再一些工艺进行之前完成。如在SiC肖特基器件制备过程中，需要先在背部欧姆接触工艺完成后，才能进行正面的肖特基金属工艺。Ohmic contact is a key process in the semiconductor device manufacturing process. Its purpose is to form a linear current-voltage relationship at the gold half-contact and ensure that the contact resistance is small enough not to affect the conduction characteristics of the device. The ohmic contact on the silicon carbide material is generally prepared by high temperature annealing method after the metal deposition is completed. Since the preparation of ohmic contacts on silicon carbide devices requires a high-temperature annealing process, and the high-temperature annealing process will have a negative impact on the materials of other parts of the semiconductor device (such as: Schottky metal, metal electrodes, etc.), in order to reduce the impact of high-temperature annealing, ohmic The contacting process needs to be completed before some processes can be performed. For example, in the preparation process of SiC Schottky devices, the front Schottky metal process can only be carried out after the back ohmic contact process is completed.
由于欧姆接触工艺会引入了金属离子，并伴随着高温退火过程，因此存在着金属离子污染器件，降低器件性能的隐患。另一方面，传统的SiC器件制备过程中，由于背部欧姆接触工艺完成后由于正面还需进行光刻、刻蚀等过程，因此需要保证一定的晶圆平整度。而为了降低器件的导通电阻，通常需要对晶圆进行衬底减薄处理，而磨片后由于应力的原因通常会导致器件的翘度升高，因此传统的热退火制备欧姆接触工艺所制备的SiC器件通常不能进行衬底减薄工艺。Since the ohmic contact process will introduce metal ions, accompanied by high-temperature annealing process, there is a hidden danger that metal ions will contaminate the device and reduce the performance of the device. On the other hand, in the traditional SiC device manufacturing process, since the backside ohmic contact process is completed, photolithography, etching and other processes need to be performed on the front side, so it is necessary to ensure a certain level of wafer flatness. In order to reduce the on-resistance of the device, it is usually necessary to thin the substrate of the wafer, and the warpage of the device will usually increase due to stress after grinding, so the traditional thermal annealing process for preparing ohmic contacts SiC devices generally cannot undergo substrate thinning processes.
激光退火形成欧姆接触工艺对器件影响则成功的避免了上述问题。这是由于激光对材料进行处理时为局部加热过程，对欧姆接触部位进行退火时对其他部位的影响很小，因此，可以在其它工艺完成之后进行欧姆接触工艺，避免了金属离子对器件的污染，也可以通过衬底减薄工艺降低器件的导通电阻。Laser annealing to form an ohmic contact process has successfully avoided the above-mentioned problems. This is because the laser treatment of the material is a local heating process, and the annealing of the ohmic contact part has little effect on other parts. Therefore, the ohmic contact process can be performed after other processes are completed, avoiding the pollution of metal ions to the device. , and the on-resistance of the device can also be reduced through the substrate thinning process.
然而，由于激光光斑的均匀性问题，激光退火在SiC上形成欧姆接触面临着工艺控制性差、欧姆接触电阻率高、欧姆接触电阻率不均匀的问题。However, due to the uniformity of the laser spot, the formation of ohmic contacts on SiC by laser annealing faces the problems of poor process control, high ohmic contact resistivity, and uneven ohmic contact resistivity.
发明内容Contents of the invention
针对以上问题，本发明提供了一种采用离子注入增强激光退火效果制备碳化硅欧姆接触的方法。采用离子注入增加SiC欧姆接触区域的掺杂浓度，通过激光退火在激活注入离子的同时在SiC上形成欧姆接触。通过该方法降低了激光退火工艺形成欧姆接触的工艺控制问题，降低了欧姆接触电阻率，从而提高了SiC器件的性能，可以有效解决背景技术中的问题。In view of the above problems, the present invention provides a method for preparing silicon carbide ohmic contacts by using ion implantation to enhance the effect of laser annealing. Ion implantation is used to increase the doping concentration of the SiC ohmic contact region, and the ohmic contact is formed on the SiC while activating the implanted ions by laser annealing. The method reduces the process control problem of the ohmic contact formed by the laser annealing process, reduces the resistivity of the ohmic contact, thereby improving the performance of the SiC device, and can effectively solve the problems in the background technology.
为了实现上述目的，本发明采用的技术方案如下：采用离子注入增强激光退火制备碳化硅欧姆接触的方法，包括如下步骤：In order to achieve the above object, the technical scheme adopted in the present invention is as follows: the method for preparing silicon carbide ohmic contact by ion implantation enhanced laser annealing comprises the following steps:
步骤一：在SiC所需形成欧姆接触的部位进行离子注入；Step 1: Perform ion implantation on the part of SiC where ohmic contact needs to be formed;
步骤二：在所述SiC晶圆表面淀积欧姆接触金属；Step 2: depositing ohmic contact metal on the surface of the SiC wafer;
步骤三：采用激光对欧姆接触金属进行辐照以制备欧姆接触。Step 3: irradiating the ohmic contact metal with a laser to prepare an ohmic contact.
其中，步骤一所述的SiC材料，晶型可以是4H-SiC，也可以是6H-SiC。Wherein, the crystal form of the SiC material described in step 1 can be 4H-SiC or 6H-SiC.
其中，步骤一种所需形成欧姆接触的部位掺杂类型可以是n型掺杂，也可以是P型掺杂。Wherein, the doping type of the part required to form the ohmic contact in step one may be n-type doping or p-type doping.
其中，步骤一所注入离子形成的掺杂类型与原有的掺杂类型相同。如：若欧姆接触部位原为N型掺杂，注入离子则为N、P、As等中的一种或者几种共同注入；若欧姆接触部位原为P型掺杂，注入离子则为B、Al等中的一种或者几种共同注入；离子注入可以是单能量离子注入也可以是多重能量的离子注入。Wherein, the doping type formed by the implanted ions in step 1 is the same as the original doping type. For example: if the ohmic contact part is originally N-type doped, the implanted ions are one or more of N, P, As, etc. implanted together; if the ohmic contact part is originally P-type doped, the implanted ions are B, P, As, etc. One or several kinds of Al etc. are co-implanted; ion implantation can be single-energy ion implantation or multiple-energy ion implantation.
其中，步骤一所述离子注入后形成的重掺杂区深度范围为0.01-1μm，重掺杂区浓度范围为1E17cm-3-5E21cm-3。Wherein, the depth of the heavily doped region formed after the ion implantation in step 1 is in the range of 0.01-1 μm, and the concentration of the heavily doped region is in the range of 1E17cm-3-5E21cm-3.
其中，步骤二中所述的欧姆接触金属可以是Ti、Ni、Pt、TiW、Si、TiN、Al、Ag、Cu、W等金属中的一种或者几种，其生长方法可以是溅射、蒸发、淀积等。Wherein, the ohmic contact metal described in step 2 can be one or more of metals such as Ti, Ni, Pt, TiW, Si, TiN, Al, Ag, Cu, W, etc., and its growth method can be sputtering, Evaporation, deposition, etc.
其中，步骤三中所述的激光辐照方法中所采用的激光器可以是激光器脉宽范围可以是微妙、纳、皮秒、飞秒激光器，激光的波长范围为100nm-1mm。Wherein, the laser used in the laser irradiation method described in step 3 may be a laser with a pulse width range of microseconds, nanoseconds, picoseconds, or femtoseconds, and a laser wavelength range of 100nm-1mm.
其中，步骤三中激光扫描方式可以是单脉冲扫描，也可以是多脉冲扫描。Wherein, the laser scanning method in step 3 may be single-pulse scanning or multi-pulse scanning.
本发明的有益效果：Beneficial effects of the present invention:
本发明采用离子注入增加SiC欧姆接触区域的掺杂浓度，通过激光退火在激活注入离子的同时在SiC上形成欧姆接触。通过该方法降低了激光退火工艺形成欧姆接触的工艺控制问题，降低了欧姆接触电阻率，从而提高了SiC器件的性能。The invention adopts ion implantation to increase the doping concentration of SiC ohmic contact area, and forms ohmic contact on SiC while activating implanted ions through laser annealing. The method reduces the process control problem of the ohmic contact formed by the laser annealing process, reduces the resistivity of the ohmic contact, and thus improves the performance of the SiC device.
附图说明Description of drawings
图1为本发明实施例中的一种示意图。Fig. 1 is a schematic diagram of an embodiment of the present invention.
图2为本发明实施例中的一种示意图。Fig. 2 is a schematic diagram of an embodiment of the present invention.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
实施例：Example:
首先，在N型的SiC衬底底部，通过离子注入N形成深度为0.2μm，掺杂浓度为1E20cm-3的重掺杂区，所需形成欧姆接触的部位掺杂类型可以是n型掺杂，也可以是P型掺杂，所注入离子形成的掺杂类型与原有的掺杂类型相同。如：若欧姆接触部位原为N型掺杂，注入离子则为N、P、As等中的一种或者几种共同注入；若欧姆接触部位原为P型掺杂，注入离子则为B、Al等中的一种或者几种共同注入；离子注入可以是单能量离子注入也可以是多重能量的离子注入，所述离子注入后形成的重掺杂区深度范围为0.01-1μm，重掺杂区浓度范围为1E17cm-3-5E21cm-3，如附图1所示。First, at the bottom of the N-type SiC substrate, a heavily doped region with a depth of 0.2 μm and a doping concentration of 1E20cm-3 is formed by ion implantation of N. The doping type of the part required to form an ohmic contact can be n-type doping , can also be P-type doping, and the doping type formed by the implanted ions is the same as the original doping type. For example: if the ohmic contact part is originally N-type doped, the implanted ions are one or more of N, P, As, etc. implanted together; if the ohmic contact part is originally P-type doped, the implanted ions are B, P, As, etc. One or more co-implantation of Al, etc.; ion implantation can be single-energy ion implantation or multiple-energy ion implantation, the depth of the heavily doped region formed after the ion implantation ranges from 0.01-1 μm, and the heavily doped The zone concentration ranges from 1E17cm -3 to 5E21cm -3 , as shown in Figure 1.
然后，在晶圆表面通过溅射工艺溅射一层厚度为100nm的Ni作为欧姆接触金属，所述的欧姆接触金属可以是Ti、Ni、Pt、TiW、Si、TiN、Al、Ag、Cu、W等金属中的一种或者几种，其生长方法可以是溅射、蒸发、淀积等，如附图2所示。Then, a layer of Ni with a thickness of 100nm is sputtered on the surface of the wafer by a sputtering process as an ohmic contact metal, and the ohmic contact metal can be Ti, Ni, Pt, TiW, Si, TiN, Al, Ag, Cu, One or more of W and other metals can be grown by sputtering, evaporation, deposition, etc., as shown in Figure 2.
最后，采用波长为532的纳秒激光器，脉冲宽度为10ns，脉冲能量密度为3.6J/cm2的单脉冲对欧姆接触金属表面进行激光辐照，激活注入离子，并且形成金属与SiC衬底的欧姆接触，所述的激光辐照方法中所采用的激光器可以是激光器脉宽范围可以是微妙、纳、皮秒、飞秒激光器，激光的波长范围为100nm-1mm，激光扫描方式可以是单脉冲扫描，也可以是多脉冲扫描。Finally, a nanosecond laser with a wavelength of 532, a single pulse with a pulse width of 10 ns, and a pulse energy density of 3.6 J/cm2 is used to irradiate the metal surface with ohmic contact with laser to activate the implanted ions and form an ohmic bond between the metal and the SiC substrate. Contact, the laser used in the laser irradiation method can be the laser pulse width range can be subtle, nano, picosecond, femtosecond laser, the wavelength range of the laser is 100nm-1mm, and the laser scanning method can be single pulse scanning , can also be a multi-pulse scan.
基于上述，本发明的优点在于，本发明采用离子注入增加SiC欧姆接触区域的掺杂浓度，通过激光退火在激活注入离子的同时在SiC上形成欧姆接触。通过该方法降低了激光退火工艺形成欧姆接触的工艺控制问题，降低了欧姆接触电阻率，从而提高了SiC器件的性能。Based on the above, the advantage of the present invention is that the present invention uses ion implantation to increase the doping concentration of the SiC ohmic contact region, and forms an ohmic contact on SiC while activating the implanted ions through laser annealing. The method reduces the process control problem of the ohmic contact formed by the laser annealing process, reduces the resistivity of the ohmic contact, and thus improves the performance of the SiC device.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
Claims (8)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610800022.5A CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
| PCT/CN2017/079844 WO2018040562A1 (en) | 2016-08-31 | 2017-04-10 | Method for preparing silicon carbide ohmic contacts by using ion implantation enhanced laser annealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610800022.5A CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107026075A true CN107026075A (en) | 2017-08-08 |
Family
ID=59524804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610800022.5A Pending CN107026075A (en) | 2016-08-31 | 2016-08-31 | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107026075A (en) |
| WO (1) | WO2018040562A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN109037041A (en) * | 2018-09-21 | 2018-12-18 | 黄兴 | A kind of preparation method and device of the Ohmic contact of silicon carbide |
| CN113178414A (en) * | 2021-03-10 | 2021-07-27 | 中国科学院微电子研究所 | Forming method of silicon carbide ohmic contact structure and preparation method of MOS transistor |
| CN113345806A (en) * | 2021-04-23 | 2021-09-03 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113707546A (en) * | 2021-08-16 | 2021-11-26 | 成都莱普科技有限公司 | Method for forming ohmic contact of semiconductor device by selective laser annealing |
| CN114695091A (en) * | 2020-12-31 | 2022-07-01 | 上海微电子装备（集团）股份有限公司 | Laser annealing method and device for electrode |
| CN119361420A (en) * | 2024-12-26 | 2025-01-24 | 山东大学 | Laser annealed silicon carbide ohmic contact, device and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410138B (en) * | 2021-06-15 | 2023-06-30 | 西安微电子技术研究所 | Low-leakage SiC Schottky diode and manufacturing method thereof |
| CN113745319B (en) * | 2021-09-06 | 2024-07-23 | 扬州扬杰电子科技股份有限公司 | Silicon carbide semiconductor device and processing method |
| CN114414747B (en) * | 2022-03-14 | 2022-08-12 | 中芯越州集成电路制造(绍兴)有限公司 | Verification method for laser annealing uniformity |
| CN115786863B (en) * | 2022-11-30 | 2025-03-04 | 山东省科学院新材料研究所 | An electro-optical element in which potassium tantalate niobate crystal forms ohmic contact with an electrode and a preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145869A1 (en) * | 2003-11-12 | 2005-07-07 | Slater David B.Jr. | Light emitting devices with self aligned ohmic contact and methods of fabricating same |
| US20060035449A1 (en) * | 2004-08-10 | 2006-02-16 | Yoo Woo S | Method of forming ultra shallow junctions |
| CN103907176A (en) * | 2011-12-02 | 2014-07-02 | 住友电气工业株式会社 | Semiconductor device fabrication method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2546865B1 (en) * | 2005-09-16 | 2023-12-06 | Wolfspeed, Inc. | Methods of processing semiconductor wafers having silicon carbide power devices thereon |
| CN101908591A (en) * | 2010-06-23 | 2010-12-08 | 山东华光光电子有限公司 | Preparation method for ohmic contact electrode for LED with SiC substrate |
| CN102507704A (en) * | 2011-10-18 | 2012-06-20 | 重庆邮电大学 | Schottky barrier diode oxygen sensor based on silicon carbide and manufacturing method thereof |
| JP6222771B2 (en) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | Method for manufacturing silicon carbide semiconductor device |
| WO2015159437A1 (en) * | 2014-04-18 | 2015-10-22 | 富士電機株式会社 | Method for manufacturing semiconductor device |
-
2016
- 2016-08-31 CN CN201610800022.5A patent/CN107026075A/en active Pending
-
2017
- 2017-04-10 WO PCT/CN2017/079844 patent/WO2018040562A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145869A1 (en) * | 2003-11-12 | 2005-07-07 | Slater David B.Jr. | Light emitting devices with self aligned ohmic contact and methods of fabricating same |
| US20060035449A1 (en) * | 2004-08-10 | 2006-02-16 | Yoo Woo S | Method of forming ultra shallow junctions |
| CN103907176A (en) * | 2011-12-02 | 2014-07-02 | 住友电气工业株式会社 | Semiconductor device fabrication method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN107706096B (en) * | 2017-11-02 | 2024-03-15 | 芯合半导体(合肥)有限公司 | Method for thinning back of silicon carbide power chip and preparing ohmic contact and product |
| CN109037041A (en) * | 2018-09-21 | 2018-12-18 | 黄兴 | A kind of preparation method and device of the Ohmic contact of silicon carbide |
| CN114695091A (en) * | 2020-12-31 | 2022-07-01 | 上海微电子装备（集团）股份有限公司 | Laser annealing method and device for electrode |
| CN113178414A (en) * | 2021-03-10 | 2021-07-27 | 中国科学院微电子研究所 | Forming method of silicon carbide ohmic contact structure and preparation method of MOS transistor |
| CN113345806A (en) * | 2021-04-23 | 2021-09-03 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113345806B (en) * | 2021-04-23 | 2024-03-05 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
| CN113707546A (en) * | 2021-08-16 | 2021-11-26 | 成都莱普科技有限公司 | Method for forming ohmic contact of semiconductor device by selective laser annealing |
| CN119361420A (en) * | 2024-12-26 | 2025-01-24 | 山东大学 | Laser annealed silicon carbide ohmic contact, device and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018040562A1 (en) | 2018-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107026075A (en) | The method that laser annealing prepares carborundum Ohmic contact is strengthened using ion implanting | |
| US8679882B2 (en) | Method of manufacturing semiconductor device, semiconductor device, and semiconductor apparatus | |
| US9384981B2 (en) | Method of manufacturing silicon carbide semiconductor device | |
| US8962468B1 (en) | Formation of ohmic contacts on wide band gap semiconductors | |
| JP6261155B2 (en) | Method for manufacturing SiC semiconductor device | |
| JP2011091100A (en) | Method of manufacturing silicon carbide semiconductor device | |
| JPWO2013080584A1 (en) | Manufacturing method of semiconductor device | |
| CN109037041A (en) | A kind of preparation method and device of the Ohmic contact of silicon carbide | |
| JP6425457B2 (en) | Semiconductor device manufacturing method | |
| US9887086B2 (en) | Method for manufacturing a wide bandgap junction barrier schottky diode | |
| TWI531004B (en) | Method for fabricating a semiconuctor chip | |
| CN104701405B (en) | Silicon carbide embedded electrode opposed-contact photo-conductive switch and manufacturing method thereof | |
| EP3134914A1 (en) | Formation of ohmic contacts on wide band gap semiconductors | |
| JP5734435B2 (en) | Manufacturing method of semiconductor device | |
| CN106252216A (en) | Use the method that laser irradiation gallium nitride epitaxial slice improves its ohmic contact characteristic | |
| Hellinger et al. | Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC | |
| US20230094592A1 (en) | Process for manufacturing a vertical conduction silicon carbide electronic device and vertical conduction silicon carbide electronic device having improved mechanical stability | |
| US11239081B2 (en) | Method for preparing ohmic contact electrode of gallium nitride-based device | |
| CN115602721A (en) | A method and component for reducing contact resistance | |
| CN108231565A (en) | The preparation method of the Ohmic contact of GaN high electron mobility transistor | |
| JP6137955B2 (en) | Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device | |
| CN108321191B (en) | Power semiconductor device and method for manufacturing the same | |
| WO2019109747A1 (en) | Ohmic contact preparation method for gallium nitride electronic device | |
| CN104134610A (en) | Method for SiC (Silicon Carbide) ohmic contact by using laser irradiation | |
| Imokawa et al. | High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170808 |