CN106997858B - Substrate wet processing device and single wafer etching and cleaning device comprising same - Google Patents

Abstract

The present invention provides a substrate wet processing device and a single wafer etching and cleaning device including the same, which comprises a rotating chuck, a transmission spindle, a backwash seat and at least one sealing member. The rotating chuck is used to hold and rotate a substrate. The transmission spindle is connected to the rotating chuck and is used to drive the rotating chuck. The backwash seat is arranged around the rotating chuck and the transmission spindle, and the backwash seat is provided with a liquid nozzle for providing liquid to clean the bottom surface of the substrate. The backwash seat comprises a plurality of components, wherein a gap is provided between two adjacent components. The at least one sealing member is arranged in each gap to isolate the leakage of liquid and gas.

Description

Substrate wet processing apparatus and single-wafer etching and cleaning apparatus including the same

【Technical field】

The present invention relates to a substrate processing device, in particular to a substrate wet processing device and a single-wafer etching and cleaning device comprising the same.

【Background technique】

In the process of semiconductor wafers, display substrates, solar substrates, LED substrates, etc., it is necessary to perform multiple processing steps on the substrates, such as spraying processing liquids (such as chemicals or deionized water, etc.) on the surface of the wafers, in order to carry out Wet processing procedures such as etching and cleaning of wafers. Please refer to FIG. 1 , which is a schematic cross-sectional view of a conventional spin-etching cleaning machine. The existing spin-etching cleaning machine 10 includes an etching chamber 12. The etching chamber 12 is provided with a stage 14 for carrying and fixing a wafer W. The rotating shaft 16 under the stage 14 can be adjusted according to various process parameters. Set requirements, rotate at high and low speeds, and then drive the wafer W to rotate, and the etchant 19 flows down from the liquid supply unit 18 above the wafer W to etch the front surface of the wafer W.

In fact, the etching chamber 12 also has many mechanisms under the stage 14, such as a motor, a fluid nozzle (not shown) for cleaning the bottom of the wafer, and so on. Generally, when etching is performed, the etching solution 19 often uses an acidic liquid. , such as nitric acid (HNO ₃ ) and hydrofluoric acid (HF), etc., and these etching solutions 19 will generate acid gas during the reaction process, and the acid gas will be introduced with the air flow after being filtered by HEPA (high-efficiency air filter). The lower body area, while eroding the body above. In addition, when the acid liquid remains on the surface of the component of the fluid nozzle, it will also flow into the mechanism area along the gap of the component due to capillary phenomenon, thereby eroding the above-mentioned mechanism.

[Content of the invention]

In view of this, in order to prevent the etching solution or the acid gas formed by it from eroding the mechanism below the cavity, the object of the present invention is to provide a substrate wet processing device, which can isolate the possible gap of the backwash seat through a sealing member to isolate Erosion of the mechanism area by etching liquids or corrosive gases.

Another object of the present invention is to provide a single-wafer etching and cleaning device, which adopts the above-mentioned substrate wet processing device to isolate the erosion of the mechanism area by etching liquid or corrosive gas.

In order to achieve the above object, the substrate wet processing apparatus provided by the present invention includes a rotary chuck, a drive spindle, a backwash seat and at least one seal. The rotating chuck is used to hold and rotate the substrate. The transmission spindle is connected to the rotary chuck for driving the rotary chuck. The back-washing seat is arranged around the rotating chuck and the drive spindle. The back-washing seat is provided with a liquid nozzle for providing liquid to clean the bottom surface of the substrate. The back-washing seat includes a plurality of components , wherein there is a gap between two adjacent components. The at least one sealing element is arranged in each gap for preventing leakage of liquid and gas.

In a preferred embodiment, the gap is annular and each seal is an O-ring.

In a preferred embodiment, the substrate wet processing apparatus further includes a mechanism area, the mechanism area is defined below the drive spindle and the back wash seat, wherein the at least one seal is used to prevent liquid and The gas enters the mechanism area.

In a preferred embodiment, the plurality of components includes a main body, an upper pressing ring and a lower pressing ring. The main body ring is arranged around the drive shaft and below the rotating chuck. The upper pressing ring is arranged around the main body and is separated from the bottom surface of the substrate by a predetermined distance, wherein a first gap is formed between the upper pressing ring and the main body. The lower pressing ring is arranged around the main body and below the upper pressing ring, wherein there is a second gap between the lower pressing ring and the main body.

In this preferred embodiment, the main body has a first annular groove at the first gap and a second annular groove at the second gap, and the at least one seal includes a first O-ring and a second annular groove. Two O-rings, the first O-ring and the second O-ring are respectively disposed in the first ring groove and the second ring groove.

In this preferred embodiment, the plurality of components further include a shaft seal ring disposed around the drive shaft and below the main body, and a third gap is formed between the shaft seal and the main body. In addition, the main body has a third annular groove at the third gap, the at least one sealing element further includes a third O-ring, and the third O-ring is arranged in the third annular groove.

In this preferred embodiment, an annular gas nozzle is formed between the upper pressing ring and the lower pressing ring, and the annular gas nozzle is used to form a gas wall between the bottom surfaces of the substrates.

In order to achieve the above-mentioned other object, the single-wafer etching and cleaning apparatus provided by the present invention includes the substrate wet processing apparatus of the above-mentioned embodiments. The above-mentioned substrate wet processing device includes a rotary chuck, a drive spindle, a backwash seat and at least one seal. The rotating chuck is used to hold and rotate a wafer. The transmission spindle is connected to the rotary chuck for driving the rotary chuck. The back-washing seat is arranged around the rotating chuck and the drive spindle. The back-washing seat is provided with a liquid nozzle for supplying liquid to clean the bottom surface of the wafer. The back-washing seat includes a plurality of components, wherein there is a gap between two adjacent components. The at least one sealing element is arranged in each gap for preventing leakage of liquid and gas.

Compared with the prior art, the substrate wet processing apparatus of the present invention and the single-wafer etching cleaning apparatus including the same seal the gaps of the plurality of components of the back cleaning seat through a plurality of O-rings, thereby overcoming the existing problems. In the prior art, the acid gas will be introduced into the lower mechanism area with the air flow after HEPA filtration, and the problem of eroding the above mechanism. At the same time, it also overcomes the problem that the capillary phenomenon flows into the mechanism area along the gap of the components, thereby eroding the above mechanism.

In order to make the above-mentioned and other objects, features, and advantages of the present invention more obvious and easy to understand, in conjunction with the accompanying drawings, a detailed description is as follows:

【Description of drawings】

1 is a schematic cross-sectional view of a conventional spin-etching cleaning machine;

2 is a schematic cross-sectional view of a substrate wet processing apparatus according to a preferred embodiment of the present invention;

3 is a schematic top view of a substrate wet processing apparatus according to this preferred embodiment;

4 is a schematic cross-sectional view of a single-wafer etching and cleaning apparatus according to a preferred embodiment of the present invention.

【Detailed ways】

Several preferred embodiments of the present invention are described in detail with the aid of the accompanying drawings and the following description, in which the same reference numerals refer to the same or similar elements in the different drawings.

Please refer to FIG. 2 , which is a schematic cross-sectional view of a substrate wet processing apparatus according to a preferred embodiment of the present invention. The substrate wet processing apparatus 20 of this embodiment is used for rotating the substrate 30 to perform wet processing. The wet processing may include steps such as etching, rinsing, and drying, wherein the substrate 30 may be a semiconductor wafer, a display substrate, a solar substrate, LED substrate, etc. The substrate wet processing apparatus 20 of this embodiment includes a rotary chuck 22, a drive spindle 24, a backwash seat 26 and at least one seal 28, and the above components can be disposed in an etching chamber (not shown).

The rotating chuck 22 is used to hold and rotate the substrate 30 . Preferably, the rotating chuck 22 can generate a vacuum negative pressure to suck and fix the substrate 30 . The transmission spindle 24 is connected to the rotary chuck 22 for driving the rotary chuck 22 . Specifically, the transmission spindle 24 can be connected to a power source such as a motor (not shown in the figure), and the motor can provide rotational driving forces with different rotational speeds, thereby rotating the substrate 30 .

Please refer to FIGS. 2 and 3 , FIG. 3 is a schematic top view of a substrate wet processing apparatus according to a preferred embodiment, wherein FIG. 2 is a cross-sectional view along the line AA′ in FIG. 3 , for the sake of clarity, the substrate is not shown in FIG. 3 30. The backwash seat 26 is disposed around the rotary chuck 22 and the drive spindle 24 . The backwash seat 26 is provided with a liquid nozzle 27 for supplying liquid to clean the bottom surface 32 of the substrate 30 . In detail, the liquid nozzle 27 can spray DI water to rinse the bottom surface 32 of the substrate 30 to protect the bottom surface 32 from erosion.

Referring to FIG. 2 , the backwash seat 26 includes a plurality of components (details will be described later), wherein a gap 260 is formed between two adjacent components. The at least one seal 28 is disposed in each gap 260 for preventing leakage of liquid and gas. In this embodiment, as shown in FIG. 3 , the gap 260 is annular, and each seal 28 is an O-ring (as shown in FIG. 2 ). It is worth noting that the sealing member 28 of the present invention is not limited to be implemented with an O-ring, and other sealing materials such as oil seals, colloids, etc. are all within the scope of the present invention. In this embodiment, the substrate wet processing apparatus 20 further includes a mechanism area 40, the mechanism area 40 is defined below the drive spindle 24 and the back wash seat 26, and the mechanism area 40 can Including motors, liquid pipelines, gas pipelines and other mechanisms. The at least one sealing member 28 is used to prevent liquid and gas from entering the mechanism area 40, so as to prevent etching liquid or acid gas from corroding the above-mentioned mechanisms such as the motor, the liquid pipeline, and the gas pipeline.

Further, the plurality of components include a main body 262 , an upper pressure ring 264 and a lower pressure ring 266 . The main body 262 is arranged around the drive shaft 24 and located below the rotating chuck 22 . The upper pressing ring 264 is arranged around the main body 262 and is separated from the bottom surface 32 of the substrate 30 by a predetermined distance D, wherein there is a first space between the upper pressing ring 264 and the main body 262 . Gap 263. The lower pressing ring 266 is arranged around the main body 262 and below the upper pressing ring 264 , wherein a second gap 265 is formed between the lower pressing ring 266 and the main body 262 . In this embodiment, the upper pressing ring 264 and the lower pressing ring 266 are locked and fixed by screws 295 . In addition, the main body 262 has a first annular groove 272 at the first gap 263 and a second annular groove 274 at the second gap 265, and the at least one sealing member 28 includes a first O The first O-ring 282 and the second O-ring 284 are respectively disposed in the first ring groove 272 and the second ring groove 274 .

As shown in FIG. 2 , it is worth mentioning that the plurality of components further include a shaft seal 268 . The shaft seal 268 is arranged around the transmission main shaft 24 and is located below the main body 262 . The shaft seal 268 is used for To seal the gap between the rotating drive shaft 24 and the main body 262 and the drive shaft 24 , specifically, the shaft seal 268 is provided with an oil seal 269 , which can keep the seal when the drive shaft 24 rotates. A third gap 267 is formed between the shaft seal 268 and the main body 262 . In addition, the main body 262 has a third annular groove 276 at the third gap 267, and the at least one sealing member 28 further includes a third O-ring 286, and the third O-ring 286 is disposed at the 276 in the third annular groove. Accordingly, in this embodiment, the first O-ring 282 , the second O-ring 284 and the third O-ring 286 block the possibility of etching liquid or acid gas from entering the mechanism area 40 .

As shown in FIGS. 2 and 3 , an annular gas nozzle 290 is also formed between the upper pressing ring 264 and the lower pressing ring 266 , and the annular gas nozzle 290 is used for the bottom surface 32 of the substrate 30 . An air wall is formed therebetween to prevent the etching solution from eroding the bottom surface 32 .

The single-wafer etching and cleaning apparatus using the substrate wet processing apparatus 20 of the above-mentioned embodiment will be described in detail below. Please refer to FIG. 4 , which is a schematic cross-sectional view of a single-wafer etching and cleaning apparatus according to a preferred embodiment of the present invention. The single-wafer etching and cleaning apparatus 50 of this embodiment includes the substrate wet processing apparatus 20 , the etching chamber 12 and the liquid supply unit 18 of the above-mentioned embodiment. The substrate wet processing apparatus 20 includes a rotary chuck 22 , a drive spindle 24 , a backwash seat 26 and at least one seal 28 . The rotating chuck 22 is used for holding and rotating a wafer W. The transmission spindle 24 is connected to the rotary chuck 22 for driving the rotary chuck 22 . The backwash seat 26 is arranged around the rotary chuck 22 and the drive spindle 24, and the backwash seat 26 is provided with a liquid nozzle 27 (as shown in FIG. 3 ) for providing liquid to clean the crystal. On the bottom surface 32 of the circle W, the backwash seat 26 includes a plurality of components, wherein a gap 260 is formed between two adjacent components. The at least one seal 28 is disposed in each gap 260 for preventing leakage of liquid and gas. The specific descriptions of the above-mentioned components are described in detail above, and are not repeated here.

To sum up, the wet substrate processing apparatus 20 of the present invention and the single-wafer etching cleaning apparatus 50 including the same can seal the gaps 260 of the components of the back-washing seat 26 through the plurality of sealing members 28, and overcome the The problem in the prior art that the acid gas will be introduced into the lower mechanism area 40 along with the air flow after the HEPA filtration is settled, and the above-mentioned mechanism will be eroded. At the same time, the problem of corrosion caused by capillary phenomenon flowing into the mechanism area 40 through the gap of the components is also overcome.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the appended claims.

Claims (7)

1. A substrate wet processing device, comprising: Rotary chuck for holding and rotating the substrate; a transmission spindle, which is connected to the rotating chuck and is used for driving the rotating chuck; A back-washing seat is arranged around the rotating chuck and the transmission spindle, and the back-washing seat is provided with a liquid nozzle for providing liquid to clean the bottom surface of the substrate, and the back-washing seat includes a plurality of components, There is a gap between two adjacent components; the plurality of components include: The main body is arranged around the transmission spindle and under the rotating chuck; an upper pressing ring, which is arranged around the main body and is separated from the bottom surface of the substrate by a predetermined distance, wherein a first gap is formed between the upper pressing ring and the main body; and a lower pressing ring, which is arranged around the main body and below the upper pressing ring, wherein there is a second gap between the lower pressing ring and the main body; the main body has a first annular groove at the first gap and a second annular groove at the second gap; a mechanism area, the mechanism area is defined below the drive spindle and the back wash seat; and At least one seal is arranged in each gap to isolate the leakage of liquid and gas, the at least one seal includes a first O-ring and a second O-ring, the first O-ring and the The second O-rings are respectively disposed in the first ring groove and the second ring groove. 2 . The substrate wet processing apparatus according to claim 1 , wherein the gap is annular, and each sealing member is an O-ring. 3 . 3 . The substrate wet processing apparatus of claim 1 , wherein the at least one seal is used to prevent liquid and gas from entering the mechanism area. 4 . 4 . The substrate wet processing apparatus according to claim 3 , wherein the plurality of components further comprises a shaft seal, which is arranged around the drive shaft and located under the main body, and the shaft seal is connected to the shaft seal. 5 . There is a third gap between the main bodies. 5 . The substrate wet processing apparatus according to claim 4 , wherein the main body has a third annular groove at the third gap, the at least one sealing member further comprises a third O-ring, and the A third O-ring is arranged in the third ring groove. 6 . The substrate wet processing apparatus according to claim 4 , wherein an annular gas nozzle is formed between the upper pressing ring and the lower pressing ring, and the annular gas nozzle is used to install the nozzle on the surface of the substrate. 7 . An air wall is formed between the bottom surfaces. 7 . An apparatus for etching and cleaning a single wafer, comprising the substrate wet processing apparatus according to claim 1 . 8 .

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