CN106938370B - A laser processing system and method - Google Patents
A laser processing system and method Download PDFInfo
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- CN106938370B CN106938370B CN201511021911.3A CN201511021911A CN106938370B CN 106938370 B CN106938370 B CN 106938370B CN 201511021911 A CN201511021911 A CN 201511021911A CN 106938370 B CN106938370 B CN 106938370B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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Abstract
本发明公开了一种激光加工系统及方法,该激光加工系统包括:激光器,提供加工所需的激光;光学系统,设于工件台的上方,调整激光的光斑尺寸,并将调整后的激光光斑投射至工件台上;传感器,设于工件台的上方,采集工件材料的参数信息;处理器,与传感器连接,接收并处理传感器采集的参数信息,得到工件材料所需激光的光斑尺寸;控制器,与处理器连接,接收处理器的信息对光学系统进行控制。通过传感器实时采集工件材料的参数信息,并通过处理器计算出所需的光斑尺寸,采用控制器控制光学系统改变激光的光斑大小来实时调整激光脉冲能量密度,实时性好,切割效率高;在切割过程中,激光器始终以额定激光功率输出,提高了激光能量的利用率。
The invention discloses a laser processing system and method. The laser processing system includes: a laser device, which provides the laser required for processing; Projected onto the workpiece table; the sensor is set above the workpiece table to collect the parameter information of the workpiece material; the processor is connected to the sensor, receives and processes the parameter information collected by the sensor, and obtains the laser spot size required by the workpiece material; the controller , connected with the processor, receiving information from the processor to control the optical system. The sensor collects the parameter information of the workpiece material in real time, and calculates the required spot size through the processor, and uses the controller to control the optical system to change the laser spot size to adjust the laser pulse energy density in real time, with good real-time performance and high cutting efficiency; During the cutting process, the laser always outputs at the rated laser power, which improves the utilization rate of laser energy.
Description
技术领域technical field
本发明涉及半导体加工领域,具体涉及一种激光加工系统及方法。The invention relates to the field of semiconductor processing, in particular to a laser processing system and method.
背景技术Background technique
在半导体加工领域,半导体器件通常在晶圆上批量制造完成,且加工完成后,需要将晶圆上的器件分离成一个一个的芯片,因此需要对晶圆进行切割。In the field of semiconductor processing, semiconductor devices are usually manufactured in batches on a wafer, and after processing, the devices on the wafer need to be separated into individual chips, so the wafer needs to be cut.
针对晶圆工件通常采用机械式切割,主要包括砂轮刀,激光切割和离子刻蚀三种切割方式,其中砂轮刀的切割道较宽,在切割减薄晶圆工件时容易引起崩边及裂纹。此外,由于半导体器件越来越多的使用低介电常数(low-k介电)材料,由于该材料的延展性及较低的粘附性使得切割非常困难,容易造成切割区域的裂纹及分层,甚至会包裹刀刃而引起断刀,因此砂轮刀切割的适应性较差。离子刻蚀的成本较高,且工序比较复杂,需要先将表层的材料划开露出基材,然后用离子进行深度刻蚀。Mechanical cutting is usually used for wafer workpieces, mainly including three cutting methods: grinding wheel cutter, laser cutting and ion etching. Among them, the cutting path of the grinding wheel cutter is relatively wide, which is easy to cause edge chipping and cracks when cutting and thinning wafer workpieces. In addition, since more and more semiconductor devices use low-k dielectric materials, the ductility and low adhesion of the materials make cutting very difficult, easily causing cracks and splits in the cutting area. layer, and even wrap the blade and cause the knife to break, so the adaptability of the grinding wheel knife to cut is poor. The cost of ion etching is relatively high, and the process is relatively complicated. It is necessary to first cut the surface material to expose the substrate, and then perform deep etching with ions.
激光切割是将激光束聚焦到工件材料的表面或者内部,材料吸收光子后通过熔化,气化和改性等方式使自身断开。使用长脉冲宽度(如纳秒级别)激光切割时,工件材料经熔化、气化,在材料上形成切割道,然而由于长脉宽激光作用时间较长,热效应比较明显,容易在材料表层形成热影响区(Heat affected zone,HAZ),从而引起材料性质改变,降低材料强度。因此,通常选择超快激光对工件材料进行切割。Laser cutting is to focus the laser beam on the surface or inside of the workpiece material, and the material will break itself by melting, gasification and modification after absorbing photons. When using long pulse width (such as nanosecond level) laser cutting, the workpiece material is melted and gasified, and a cutting line is formed on the material. However, due to the long pulse width laser action time, the thermal effect is more obvious, and it is easy to form heat on the surface of the material. Heat affected zone (HAZ), which causes changes in material properties and reduces material strength. Therefore, ultrafast lasers are usually chosen to cut workpiece materials.
在半导体加工领域,通常会使用不同的材料来制造IC器件,如铜、low-k介电材料。不同材料的厚度不同,这些材料被一层一层覆盖到工件基底上,在进行切割时需要将这些材料以及基底全部切开,由于不同材料对激光的吸收不同,其烧蚀阈值也不同,烧蚀阈值是指:激光作用在材料上,使材料发生相变致使材料去除所需的最小激光能量密度。因此切割不同材料所需的激光脉冲能量密度也不同。而过高的激光能量密度会转化成热能,使材料升温,甚至会破坏已加工好的IC电路。因此选用不同的激光脉冲能量密度对工件上不同的材料层,以及工件不同的区域进行切割非常重要。In the field of semiconductor processing, different materials are usually used to manufacture IC devices, such as copper, low-k dielectric materials. The thickness of different materials is different, and these materials are covered on the workpiece substrate layer by layer. When cutting, these materials and the substrate need to be cut completely. Because different materials absorb laser light differently, their ablation thresholds are also different. The eclipse threshold refers to the minimum laser energy density required for the laser to act on the material to cause a phase change in the material and to remove the material. Therefore, the laser pulse energy density required to cut different materials is also different. Excessive laser energy density will be converted into heat energy, which will heat up the material and even destroy the processed IC circuit. Therefore, it is very important to choose different laser pulse energy densities to cut different material layers on the workpiece and different regions of the workpiece.
现有技术中给出了一种切割基片时所形成可变像散聚焦光斑的方法。该方法首先扩展激光束,然后改型扩展光束,使光束沿着像散轴准直而沿着聚焦轴汇聚,在基板面形成像散聚焦光斑,该光斑具有伸长形状,且沿所述像散轴为长度,沿所述聚焦轴为宽度,且宽度小于长度。通过调整像散聚焦光斑的尺寸,从而使得工件基底上的能量密度处于最佳状态。所述像散聚焦光斑沿长度方向相对工件基底移动,形成光斑烧蚀达到切割效果。然而该技术中并未揭示如何调整光斑尺寸以达到最佳切割效果,且只通过一种方法来调整激光能量密度,具有很大局限性。In the prior art, a method of focusing light spots with variable astigmatism formed when cutting a substrate is given. In this method, the laser beam is first expanded, and then the expanded beam is modified so that the beam is collimated along the astigmatic axis and converged along the focusing axis to form an astigmatic focused spot on the substrate surface, the spot has an elongated shape, and along the The scatter axis is the length and along said focus axis is the width, and the width is less than the length. By adjusting the size of the astigmatism focused spot, the energy density on the workpiece substrate is in an optimal state. The astigmatism focusing spot moves relative to the base of the workpiece along the length direction to form the spot ablation to achieve the cutting effect. However, this technology does not disclose how to adjust the spot size to achieve the best cutting effect, and only one method is used to adjust the laser energy density, which has great limitations.
之后,现有技术中又提出了一种可改变时间脉冲剖面的激光划片工件的方法。所述方法包括第一时间脉冲剖面和第二时间脉冲剖面,使用第一时间脉冲剖面的激光序列切割基底的一层,使用第二时间脉冲剖面的激光序列切割工件剩下部分。其第一时间脉冲剖面和第二时间脉冲剖面是指激光脉冲的强度随时间变化,形成不同的剖面形貌,如高斯型时间脉冲剖面、方形时间脉冲剖面和三角形时间脉冲剖面等。根据基底材料的不同特定,定制激光时间脉冲剖面以达到最佳切割效果。然而该方法中依然存在以下不足:一是通过调整时间脉冲剖面的方法不可避免地降低了激光能量的利用率,并且需要一套复杂的激光输出控制系统调整输出光强随时间的变化,成本高;二是该方法仅适用于纳秒脉冲激光,而对于皮秒量级激光脉冲调整效果大大降低,因此未能切实满足实际需求。Later, a method for laser scribing workpieces that can change the time pulse profile was proposed in the prior art. The method includes a first time pulse profile cutting a layer of the substrate using a laser sequence of the first time pulse profile and a second time pulse profile cutting a remaining portion of the workpiece using the laser sequence of the second time pulse profile. The first time pulse profile and the second time pulse profile refer to the intensity of the laser pulse changing with time to form different profile shapes, such as Gaussian time pulse profile, square time pulse profile and triangular time pulse profile. According to the specificity of the substrate material, the laser time pulse profile can be customized to achieve the best cutting effect. However, this method still has the following deficiencies: First, the utilization rate of laser energy is inevitably reduced by adjusting the time pulse profile, and a complex laser output control system is required to adjust the output light intensity over time, which is costly ; Second, this method is only applicable to nanosecond pulse lasers, and the adjustment effect for picosecond laser pulses is greatly reduced, so it cannot actually meet the actual needs.
发明内容Contents of the invention
本发明提供了一种激光加工系统及方法,以解决以上技术问题。The present invention provides a laser processing system and method to solve the above technical problems.
为了解决上述技术问题,本发明的技术方案是:一种激光加工系统,用于对工件台上的工件材料进行加工,包括:激光器,提供加工所需的激光;光学系统,设于所述工件台的上方,调整所述激光的光斑尺寸,并将调整后的激光光斑投射至工件台上;传感器,设于所述工件台的上方,采集所述工件材料的参数信息;处理器,与所述传感器连接,接收并处理所述传感器采集的参数信息,得到工件材料所需激光的光斑尺寸;控制器,与所述处理器连接,接收所述处理器的信息控制所述光学系统形成所需的光斑尺寸。In order to solve the above technical problems, the technical solution of the present invention is: a laser processing system for processing the workpiece material on the workpiece table, including: a laser, which provides the laser required for processing; an optical system, which is arranged on the workpiece Above the stage, adjust the spot size of the laser, and project the adjusted laser spot onto the workpiece stage; the sensor is arranged above the workpiece stage to collect the parameter information of the workpiece material; the processor, with the The sensor is connected to receive and process the parameter information collected by the sensor to obtain the laser spot size required by the workpiece material; the controller is connected to the processor and receives the information from the processor to control the optical system to form the required of the spot size.
进一步的,所述激光器为脉冲激光器。Further, the laser is a pulsed laser.
进一步的,所述光学系统包括沿光路依次排列的激光透镜和准直透镜,所述准直透镜与电机连接,所述电机连接至所述控制器,所述电机带动所述准直透镜相对所述激光透镜运动。Further, the optical system includes a laser lens and a collimator lens arranged in sequence along the optical path, the collimator lens is connected to a motor, the motor is connected to the controller, and the motor drives the collimator lens relative to the The movement of the laser lens is described.
进一步的,所述光学系统包括转盘机构,所述转盘机构上设有若干通孔,所述通孔内设有衍射光学元件,所述通孔内的衍射光学元件的形貌不同。Further, the optical system includes a turntable mechanism, and the turntable mechanism is provided with several through holes, and diffractive optical elements are arranged in the through holes, and the shapes of the diffractive optical elements in the through holes are different.
进一步的,所述传感器为光电探测器,测量所述工件材料的反射率。Further, the sensor is a photodetector, which measures the reflectivity of the workpiece material.
进一步的,所述传感器为激光位移传感器,测量所述工件材料的厚度以及切割后材料的剩余厚度。Further, the sensor is a laser displacement sensor, which measures the thickness of the workpiece material and the remaining thickness of the material after cutting.
进一步的,所述传感器为高速相机,测量工件材料的切缝宽度。Further, the sensor is a high-speed camera, which measures the kerf width of the workpiece material.
本发明还提供一种激光加工系统的激光加工方法,包括以下步骤:The present invention also provides a laser processing method of a laser processing system, comprising the following steps:
S1:激光器发出激光,经过光学系统后照射至工件台的工件材料上;所述光学系统在工件面形成不同尺寸的加工光斑,从而得到切割不同工件材料所需的激光能量密度;S1: The laser emits laser light and irradiates the workpiece material on the workpiece table after passing through the optical system; the optical system forms processing spots of different sizes on the workpiece surface, thereby obtaining the laser energy density required for cutting different workpiece materials;
S2:传感器实时采集所述工件材料的参数信息,并将采集到的参数信息发送至处理器;S2: The sensor collects parameter information of the workpiece material in real time, and sends the collected parameter information to the processor;
S3:所述处理器接收所述参数信息,对其进行处理,并根据切割所述工件材料所需的激光脉冲能量密度计算出所述工件材料所需激光的光斑尺寸,并将包括该光斑尺寸的信息发送至控制器;S3: The processor receives the parameter information, processes it, and calculates the laser spot size required for the workpiece material according to the laser pulse energy density required for cutting the workpiece material, and will include the spot size The information is sent to the controller;
S4:所述控制器根据接收的光斑尺寸的信息控制所述光学系统形成所需的光斑尺寸,达到工件材料所需的激光脉冲能量密度;S4: The controller controls the optical system to form the required spot size according to the received information of the spot size, so as to achieve the laser pulse energy density required by the workpiece material;
S5:所述工件材料与激光的光斑相对移动形成加工轨迹,对工件材料进行加工。S5: The workpiece material moves relative to the laser spot to form a processing track, and the workpiece material is processed.
进一步的,所述步骤S2中,所述参数信息包括工件材料的反射率、工件材料的厚度和切割后材料的剩余厚度以及工件材料的切缝宽度。Further, in the step S2, the parameter information includes the reflectivity of the workpiece material, the thickness of the workpiece material, the remaining thickness of the material after cutting, and the kerf width of the workpiece material.
本发明提供一种激光加工系统及方法,该激光加工系统包括:激光器,提供加工所需的激光;光学系统,设于所述工件台的上方,调整所述激光的光斑尺寸,并将调整后的激光光斑投射至工件台上;传感器,设于所述工件台的上方,采集所述工件材料的参数信息;处理器,与所述传感器连接,接收并处理所述传感器采集的参数信息,得到工件材料所需激光的光斑尺寸;控制器,与所述处理器连接,接收所述处理器的信息对所述光学系统进行控制。通过传感器实时采集工件材料的参数信息,并通过处理器计算出所需的光斑尺寸,采用控制器控制光学系统改变激光的光斑大小来实时调整激光脉冲能量密度,实时性好,切割效率高;在切割过程中,激光器始终以额定激光功率输出,最大程度利用激光能量用于切割,并且不受激光脉冲宽度的限制,适用性较广,大大提高了激光能量的利用率。The present invention provides a laser processing system and method. The laser processing system includes: a laser, which provides the laser required for processing; The laser spot is projected onto the workpiece table; the sensor is arranged above the workpiece table to collect the parameter information of the workpiece material; the processor is connected to the sensor, receives and processes the parameter information collected by the sensor, and obtains The spot size of the laser light required by the workpiece material; the controller is connected with the processor and receives information from the processor to control the optical system. The sensor collects the parameter information of the workpiece material in real time, and calculates the required spot size through the processor, and uses the controller to control the optical system to change the laser spot size to adjust the laser pulse energy density in real time, with good real-time performance and high cutting efficiency; During the cutting process, the laser is always output at the rated laser power, and the laser energy is used for cutting to the greatest extent, and it is not limited by the laser pulse width. It has wide applicability and greatly improves the utilization rate of laser energy.
附图说明Description of drawings
图1是本发明激光加工系统实施例1的结构示意图;Fig. 1 is a schematic structural view of embodiment 1 of the laser processing system of the present invention;
图2a、2b分别是本发明激光加工系统实施例1中工件的俯视图和主视图;Figures 2a and 2b are the top view and front view of the workpiece in Embodiment 1 of the laser processing system of the present invention, respectively;
图3是本发明激光加工系统实施例1中光学系统的结构示意图;3 is a schematic structural view of the optical system in Embodiment 1 of the laser processing system of the present invention;
图4a是本发明激光加工系统实施例2中一类衍射光学元件对应的光学系统的结构示意图;Fig. 4a is a schematic structural diagram of an optical system corresponding to a type of diffractive optical element in Embodiment 2 of the laser processing system of the present invention;
图4b是图4a中四个衍射光学元件形成的光斑示意图;Fig. 4b is a schematic diagram of spots formed by four diffractive optical elements in Fig. 4a;
图5a是本发明激光加工系统实施例2中另一类衍射光学元件对应的光学系统的结构示意图;Fig. 5a is a schematic structural diagram of an optical system corresponding to another type of diffractive optical element in Embodiment 2 of the laser processing system of the present invention;
图5b是图5a中四个衍射光学元件形成的光斑示意图。Fig. 5b is a schematic diagram of the light spots formed by the four diffractive optical elements in Fig. 5a.
图中所示:1、工件台;2、工件材料;201、器件层;202、工件基底;203、保护胶层;204、芯片;3、激光器;301、激光;4、光学系统;401、激光透镜;402、准直透镜;403、转盘机构;404a~404d、衍射光学元件;302、405a~405d、椭圆光斑;406a~406d、圆形光斑;5、传感器;6、处理器;7、控制器。As shown in the figure: 1. workpiece table; 2. workpiece material; 201. device layer; 202. workpiece substrate; 203. protective adhesive layer; 204. chip; 3. laser; 301. laser; 4. optical system; 401. Laser lens; 402, collimating lens; 403, turntable mechanism; 404a-404d, diffractive optical element; 302, 405a-405d, elliptical spot; 406a-406d, circular spot; 5, sensor; 6, processor; 7, controller.
具体实施方式Detailed ways
下面结合附图对本发明作详细描述。The present invention will be described in detail below in conjunction with the accompanying drawings.
实施例1Example 1
如图1-3所示,本发明一种激光加工系统,用于对工件台1上的工件材料2进行加工(即切割),包括:激光器3,提供加工所需的激光301,优选的,所述激光器3为脉冲激光器,其脉冲的宽度不受限制,如可以是超短脉冲宽度的激光器3,有利于控制切割过程中的热影响;光学系统4,设于所述工件台1的上方,调整所述激光301的光斑尺寸,并将调整后的激光301的光斑投射至工件台1上;传感器5,设于所述工件台1的上方,采集所述工件材料2的参数信息;处理器6,与所述传感器5连接,接收并处理所述传感器5采集的参数信息,得到工件材料2所需激光301的光斑尺寸;控制器7,与所述处理器6连接,接收所述处理器6的信息控制所述光学系统4形成所需的光斑尺寸。需要说明的是,如图2a-2b所示为工件材料2的结构示意图,由上至下包括器件层201、工件基底202和保护胶层203,其中器件层201由多层不同材料复合而成,且经过切割后形成若干个芯片204,保护胶层203是切割前贴在工件基底202底面的,可防止切割后的芯片204散落。通过传感器5实时采集工件材料2的参数信息,并通过处理器6计算出所需的光斑尺寸,采用控制器7控制光学系统4改变激光301的光斑大小来实时调整激光脉冲能量密度,实时性好,切割效率高;在切割过程中,激光器3始终以额定激光功率输出,最大程度利用激光能量用于切割,并且不受激光脉冲宽度的限制,适用性较广,大大提高了激光能量的利用率。As shown in Figures 1-3, a kind of laser processing system of the present invention is used for processing (that is, cutting) the workpiece material 2 on the workpiece table 1, including: a laser 3, providing laser 301 required for processing, preferably, The laser 3 is a pulsed laser, and the width of its pulse is not limited. For example, it can be a laser 3 with an ultrashort pulse width, which is beneficial to control the thermal influence in the cutting process; the optical system 4 is located above the workpiece table 1 , adjust the spot size of the laser 301, and project the adjusted spot of the laser 301 onto the workpiece table 1; the sensor 5 is arranged above the workpiece table 1, and collects the parameter information of the workpiece material 2; processing A device 6 is connected to the sensor 5 to receive and process the parameter information collected by the sensor 5 to obtain the spot size of the laser 301 required by the workpiece material 2; a controller 7 is connected to the processor 6 to receive the processing The information of the device 6 controls the optical system 4 to form the required spot size. It should be noted that, as shown in Figure 2a-2b is a schematic structural view of the workpiece material 2, including a device layer 201, a workpiece substrate 202 and a protective adhesive layer 203 from top to bottom, wherein the device layer 201 is composed of multiple layers of different materials , and several chips 204 are formed after cutting, and the protective adhesive layer 203 is pasted on the bottom surface of the workpiece substrate 202 before cutting, which can prevent the chips 204 from being scattered after cutting. The parameter information of the workpiece material 2 is collected in real time by the sensor 5, and the required spot size is calculated by the processor 6, and the laser pulse energy density is adjusted in real time by controlling the optical system 4 by the controller 7 to change the spot size of the laser 301, and the real-time performance is good. , high cutting efficiency; during the cutting process, the laser 3 always outputs at the rated laser power, maximizing the use of laser energy for cutting, and is not limited by the laser pulse width, wide applicability, greatly improving the utilization rate of laser energy .
如图3所示,所述光学系统4连续或非连续地调整作用在工件面的激光光斑形貌及尺寸。所述光学系统4包括沿光路依次排列的激光透镜401和准直透镜402,所述准直透镜402与电机(图中未标出)连接,所述电机连接至所述控制器7,所述电机带动所述准直透镜402相对所述激光透镜401运动。具体的,激光301入射到激光透镜401的入射端面,并经过出射端面后投射到准直透镜402上使激光301的光束进行准直,本实施例中,在沿竖直方向上,即图中的Y方向,激光301的光斑尺度得到拉伸,在水平方向上,即图中的Z方向,光斑的尺寸保持不变,最终在工件材料2表面形成椭圆光斑302,其Y向经激光透镜401拉伸成长轴,而Z向没有拉伸,为短轴。此时可以通过电机带动准直透镜402相对所述激光透镜401水平运动,以调整激光透镜401和准直透镜402之间的距离L。可以实现上述功能的光学系统4的激光透镜401有很多种,例如可以是柱面镜,而且不限于拉伸某一方向的光斑尺寸,也可以采用压缩光斑尺寸的方式;本实施例也不限于只调整一个方向的光斑尺寸,可以对两个方向同时进行调整;该激光301的形状也不限于圆形,可以是其它形状,比如长方形。As shown in FIG. 3 , the optical system 4 continuously or discontinuously adjusts the shape and size of the laser spot acting on the workpiece surface. The optical system 4 includes a laser lens 401 and a collimator lens 402 arranged in sequence along the optical path, the collimator lens 402 is connected to a motor (not shown in the figure), the motor is connected to the controller 7, and the The motor drives the collimator lens 402 to move relative to the laser lens 401 . Specifically, the laser light 301 is incident on the incident end face of the laser lens 401, and is projected onto the collimator lens 402 after passing through the exit end face to collimate the beam of the laser light 301. In this embodiment, in the vertical direction, that is, in the figure In the Y direction of the laser 301, the spot size of the laser 301 is stretched. In the horizontal direction, that is, the Z direction in the figure, the size of the spot remains unchanged, and finally an elliptical spot 302 is formed on the surface of the workpiece material 2, and its Y direction passes through the laser lens 401. The long axis is stretched, but the Z direction is not stretched, which is the short axis. At this time, the motor can drive the collimating lens 402 to move horizontally relative to the laser lens 401 to adjust the distance L between the laser lens 401 and the collimating lens 402 . The laser lens 401 of the optical system 4 that can realize the above-mentioned function has many kinds, for example, it can be a cylindrical lens, and it is not limited to stretching the spot size of a certain direction, and the mode of compressing the spot size can also be used; this embodiment is not limited to The spot size of only one direction can be adjusted, and two directions can be adjusted simultaneously; the shape of the laser 301 is not limited to a circle, and can be other shapes, such as a rectangle.
优选的,所述传感器5为光电探测器,测量所述工件材料2的反射率。具体的,处理器6通过传感器5获得的反射率确定当前切割最表层的是何种材料,根据该材料的烧蚀阈值确定所需的激光脉冲能量密度,通过该激光脉冲能量密度计算出所需的光斑面积,通常激光脉冲能量密度可以选择为烧蚀阈值的4~10倍。如Si在15ps,532nm激光脉冲下的烧蚀阈值为0.15J/cm2,激光器单个脉冲能量为10uJ,可以将光斑的长轴调整为100um,短轴调整为20um,则单脉冲能量密度为0.64J/cm2,约4倍烧蚀阈值。Preferably, the sensor 5 is a photodetector, which measures the reflectivity of the workpiece material 2 . Specifically, the processor 6 determines what kind of material is currently cutting the outermost layer through the reflectivity obtained by the sensor 5, determines the required laser pulse energy density according to the ablation threshold of the material, and calculates the required laser pulse energy density through the laser pulse energy density. Generally, the laser pulse energy density can be selected to be 4 to 10 times the ablation threshold. For example, the ablation threshold of Si under 15ps, 532nm laser pulse is 0.15J/cm 2 , the single pulse energy of the laser is 10uJ, the long axis of the spot can be adjusted to 100um, and the short axis can be adjusted to 20um, then the single pulse energy density is 0.64 J/cm 2 , about 4 times the ablation threshold.
本发明还提供了一种如上所述激光加工系统的激光加工方法,包括以下步骤:The present invention also provides a laser processing method of the above-mentioned laser processing system, comprising the following steps:
S1:激光器3发出激光301,经过光学系统4后照射至工件台1的工件材料2上,激光301可以为任意宽度的激光脉冲,所述光学系统4在工件面形成不同尺寸的加工光斑,从而得到切割不同工件材料2所需的激光能量密度。S1: The laser 3 emits laser light 301, which is irradiated onto the workpiece material 2 of the workpiece table 1 after passing through the optical system 4. The laser light 301 can be a laser pulse of any width, and the optical system 4 forms processing spots of different sizes on the workpiece surface, thereby Obtain the laser energy density required for cutting different workpiece materials 2 .
S2:传感器5实时采集所述工件材料2的参数信息,并将采集到的参数信息发送至处理器6;该参数信息包括工件材料2的反射率、工件材料2的厚度和切割后材料的剩余厚度以及工件材料2的切缝宽度。S2: The sensor 5 collects the parameter information of the workpiece material 2 in real time, and sends the collected parameter information to the processor 6; the parameter information includes the reflectivity of the workpiece material 2, the thickness of the workpiece material 2 and the remaining material after cutting Thickness and kerf width of workpiece material 2.
S3:所述处理器6接收所述参数信息,对其进行处理,并根据切割该工件材料2所需的激光脉冲能量密度计算出所需激光301的光斑尺寸,并将包括该光斑尺寸的信息发送至控制器7;当参数信息为工件材料2的反射率时,处理器6通过该反射率确定当前切割最表层的是何种材料,根据该材料的烧蚀阈值确定所需的激光脉冲能量密度,通常激光脉冲能量密度可以选择为烧蚀阈值的4~10倍;当参数信息为工件材料2的厚度和切割后材料的剩余厚度时,处理器6计算出工件材料2的切割深度以及与目标切割深度的偏差,控制器7根据该偏差即可计算出所需的光斑面积,具体的,通过切割深度的变化调整激光脉冲能量密度来调整切割深度,其中减少光斑面积可以增大激光能量脉冲密度以获得更大的切深,增大光斑面积可以减小激光能量脉冲密度来减小切深,如该工件材料2的目标切割深度为L,处理器6计算出当前的切割深度为L1,则偏差ΔL=L1–L,此时控制器7运行PID控制算法可得出当前所需的光斑面积,并通过控制器7进行控制,使实际切深与目标切深趋于一致;当参数信息为工件材料2的切缝宽度时,处理器6将该切缝宽度与目标切割宽度进行对比,获得切割宽度差值,并通过控制器7根据该切割宽度的差值计算出所需的光斑面积,控制光学系统4对激光301沿切缝宽度方向的尺寸进行调整,如短轴尺寸,以使得切割宽度与目标切割宽度相同。S3: The processor 6 receives the parameter information, processes it, and calculates the spot size of the required laser 301 according to the laser pulse energy density required for cutting the workpiece material 2, and includes the information of the spot size Send it to the controller 7; when the parameter information is the reflectivity of the workpiece material 2, the processor 6 determines which material is currently cutting the outermost layer through the reflectivity, and determines the required laser pulse energy according to the ablation threshold of the material Density, usually the laser pulse energy density can be selected as 4 to 10 times the ablation threshold; when the parameter information is the thickness of the workpiece material 2 and the remaining thickness of the material after cutting, the processor 6 calculates the cutting depth of the workpiece material 2 and the The deviation of the target cutting depth, the controller 7 can calculate the required spot area according to the deviation, specifically, adjust the laser pulse energy density through the change of the cutting depth to adjust the cutting depth, wherein reducing the spot area can increase the laser energy pulse Density to obtain a greater depth of cut, increasing the spot area can reduce the laser energy pulse density to reduce the depth of cut, such as the target cutting depth of the workpiece material 2 is L, the processor 6 calculates the current cutting depth as L1, Then the deviation ΔL=L1–L, at this time, the controller 7 runs the PID control algorithm to obtain the currently required spot area, and controls it through the controller 7, so that the actual depth of cut is consistent with the target depth of cut; when the parameter information When it is the kerf width of the workpiece material 2, the processor 6 compares the kerf width with the target cutting width to obtain the difference of the cutting width, and calculates the required spot area according to the difference of the cutting width by the controller 7 , the optical system 4 is controlled to adjust the dimension of the laser 301 along the width direction of the slit, such as the minor axis dimension, so that the cutting width is the same as the target cutting width.
S4:所述控制器7根据接收的光斑尺寸的信息控制光学系统4形成所需的光斑尺寸,达到工件材料2所需的激光脉冲能量密度,工件材料2所需的激光脉冲能量密度F可以通过调整光斑尺寸,也即光斑面积S实现,F=P/S,P表示激光脉冲能量。通过调整光斑的尺寸来实现工件材料2所需的激光脉冲能量密度,在切割过程中始终保持激光器3以最大功率输出,使激光使用效率最大化,以达到最快切割速度,提高了系统的工作效率。另外,不同的光学系统4对应的光斑形状不同,处理器6可根据具体的光学系统4计算出对应的光斑形状。S4: The controller 7 controls the optical system 4 to form the required spot size according to the information of the received spot size, so as to achieve the laser pulse energy density required by the workpiece material 2, and the laser pulse energy density F required by the workpiece material 2 can be passed It is realized by adjusting the spot size, that is, the spot area S, F=P/S, and P represents the energy of the laser pulse. By adjusting the size of the light spot to achieve the laser pulse energy density required by the workpiece material 2, the laser 3 is always output at the maximum power during the cutting process, so that the laser use efficiency is maximized to achieve the fastest cutting speed and improve the work of the system efficiency. In addition, different optical systems 4 correspond to different spot shapes, and the processor 6 can calculate the corresponding spot shapes according to the specific optical system 4 .
S5:所述工件台1带动工件材料2相对激光301的光斑进行移动形成加工轨迹,对工件材料2进行加工,即将其切割形成若干独立的芯片204。S5: The workpiece table 1 drives the workpiece material 2 to move relative to the spot of the laser 301 to form a processing track, and process the workpiece material 2, that is, cut it to form a plurality of independent chips 204 .
在S5中,只要保证工件材料与激光的光斑相对移动形成加工轨迹即可,本发明并不局限于上述由工件台带动工件材料移动的方式。In S5, as long as the relative movement of the workpiece material and the laser spot is sufficient to form a processing track, the present invention is not limited to the above-mentioned method in which the workpiece material is driven by the workpiece table to move.
实施例2Example 2
与实施例1不同的是,本实施例2中,所述光学系统4包括转盘机构403,所述转盘机构403上设有若干通孔,所述通孔的数量为3~5个,本实施例中,通孔设有4个,所述通孔内设有衍射光学元件,所述4个通孔内的衍射光学元件的形貌各不同,激光301通过不同的衍射光学元件得到的光斑形状和尺寸不同,如图4a所示,404a~404d为转盘机构403上安装的不同的衍射光学元件,当激光301入射到所述衍射光学元件上时会形成不同的衍射光斑405a~405d,如图4b所示,其中405a是404a形成的具有长轴l1和短轴m2的椭圆光斑,假设激光脉冲能量为u,其对应的激光脉冲能量密度为4u/(π*l1*m1);405a~405d均具有不同的长轴和短轴,因此可以形成共4种激光脉冲能量密度。通过旋转转盘机构403可以将不同的衍射光学元件切入激光光路,可实现对激光光斑的调整,得到所需的激光脉冲能量密度。如图5a所示为另一类衍射光学元件对应的光学系统,激光301通过该类衍射光学元件后产生一行排开的N个直径为R的圆形光斑,如图5b所示,光斑离散化后的优点是使工件材料2在前一个光斑与后一个光斑之间有一定间隔时间,可以使其释放应力及散热,利于切割。404a~404d分别对应形成406a~406d所示的1~4个直径为R的圆形光斑,其光斑面积依次增大,所对应的脉冲能量密度依次递减。通过旋转转盘机构403可以将不同的衍射光学元件切入激光光路,可实现对激光光斑的调整,得到所需的激光脉冲能量密度。The difference from Embodiment 1 is that in Embodiment 2, the optical system 4 includes a turntable mechanism 403, and the turntable mechanism 403 is provided with a number of through holes, and the number of the through holes is 3-5. In the example, there are 4 through holes, and diffractive optical elements are arranged in the through holes, and the shapes of the diffractive optical elements in the 4 through holes are different, and the spot shape obtained by the laser 301 through different diffractive optical elements Different from the size, as shown in FIG. 4a, 404a-404d are different diffractive optical elements installed on the turntable mechanism 403. When the laser 301 is incident on the diffractive optical element, different diffractive spots 405a-405d will be formed, as shown in FIG. As shown in 4b, 405a is an elliptical spot formed by 404a with a major axis l1 and a minor axis m2, assuming that the laser pulse energy is u, and the corresponding laser pulse energy density is 4u/(π*l1*m1); 405a~405d All have different major and minor axes, so a total of 4 kinds of laser pulse energy densities can be formed. By rotating the turntable mechanism 403, different diffractive optical elements can be cut into the laser light path, which can realize the adjustment of the laser spot and obtain the required laser pulse energy density. As shown in Figure 5a, it is an optical system corresponding to another type of diffractive optical element. After the laser 301 passes through this type of diffractive optical element, a row of N circular spots with a diameter of R will be generated. As shown in Figure 5b, the spot is discretized The last advantage is to make the workpiece material 2 have a certain interval between the previous light spot and the next light spot, so that it can release stress and dissipate heat, which is beneficial to cutting. 404a-404d correspond to form 1-4 circular light spots with a diameter R shown in 406a-406d respectively, the areas of the light spots increase sequentially, and the corresponding pulse energy densities decrease sequentially. By rotating the turntable mechanism 403, different diffractive optical elements can be cut into the laser light path, which can realize the adjustment of the laser spot and obtain the required laser pulse energy density.
实施例3Example 3
与实施例1不同的是,本实施例中,所述传感器5为激光位移传感器,测量所述工件材料2的厚度以及切割后材料的剩余厚度,从而得到工件材料2的切割深度,处理器6根据切割深度的变化调整激光脉冲能量密度来调整切割深度,其中减少光斑面积可以增大激光能量脉冲密度以获得更大的切深,增大光斑面积可以减小激光能量脉冲密度来减小切深,如该工件材料2的目标切割深度为L,处理器6计算出当前的切割深度为L1,则偏差ΔL=L1–L,此时控制器7运行PID控制算法可得出当前所需的光斑面积,并通过控制器7进行控制,使实际切深与目标切深趋于一致,通过该方法对光斑面积进行连续调整,以达到最佳的切割效果。Different from Embodiment 1, in this embodiment, the sensor 5 is a laser displacement sensor, which measures the thickness of the workpiece material 2 and the remaining thickness of the material after cutting, so as to obtain the cutting depth of the workpiece material 2, and the processor 6 Adjust the laser pulse energy density according to the change of cutting depth to adjust the cutting depth, among which reducing the spot area can increase the laser energy pulse density to obtain a greater depth of cut, increasing the spot area can reduce the laser energy pulse density to reduce the cutting depth , if the target cutting depth of the workpiece material 2 is L, and the processor 6 calculates the current cutting depth as L1, then the deviation ΔL=L1–L, at this time, the controller 7 runs the PID control algorithm to obtain the current required spot The area is controlled by the controller 7 so that the actual depth of cut is consistent with the target depth of cut, and the spot area is continuously adjusted by this method to achieve the best cutting effect.
实施例4Example 4
与实施例1不同的是,本实施例中,所述传感器5为高速相机,测量工件材料的切缝宽度,处理器6将该切缝宽度与目标切割宽度进行对比,获得切割宽度差值,并通过控制器7根据该切割宽度的差值计算出所需的光斑面积,控制光学系统4对激光301沿切缝宽度方向的尺寸进行调整,如短轴尺寸,以使得切割宽度与目标切割宽度相同,通过该方法也可以对光斑面积进行连续多次调整,以达到最佳的切割效果。The difference from Embodiment 1 is that in this embodiment, the sensor 5 is a high-speed camera that measures the kerf width of the workpiece material, and the processor 6 compares the kerf width with the target cutting width to obtain the difference in cutting width, And calculate the required spot area according to the difference of the cutting width by the controller 7, control the optical system 4 to adjust the size of the laser 301 along the width direction of the slit, such as the minor axis size, so that the cutting width is equal to the target cutting width Similarly, this method can also be used to continuously adjust the spot area for multiple times to achieve the best cutting effect.
综上所述,本发明提供一种激光加工系统及方法,该激光加工系统用于对工件台1上的工件材料2进行加工,包括:激光器3,提供加工所需的激光301;光学系统4,设于所述工件台1的上方,调整所述激光301的光斑尺寸,并将调整后的激光301的光斑投射至工件台1上;传感器5,设于所述工件台1的上方,采集所述工件材料2的参数信息;处理器6,与所述传感器5连接,接收并处理所述传感器5采集的参数信息,得到工件材料2所需激光301的光斑尺寸;控制器7,与所述处理器6连接,接收所述处理器6的信息对所述光学系统4进行控制。通过传感器5实时采集工件材料2的参数信息,并通过处理器6计算出所需的光斑尺寸,采用控制器7控制光学系统4改变激光光斑4大小来实时调整激光脉冲能量密度,实时性好,切割效率高;在切割过程中,激光器3始终以额定激光功率输出,最大程度利用激光能量用于切割,并且不受激光脉冲宽度的限制,适用性较广,大大提高了激光能量的利用率。In summary, the present invention provides a laser processing system and method. The laser processing system is used to process the workpiece material 2 on the workpiece table 1, including: a laser 3, which provides a laser 301 required for processing; an optical system 4 , arranged above the workpiece table 1, adjusting the spot size of the laser 301, and projecting the adjusted spot of the laser 301 onto the workpiece table 1; the sensor 5, arranged above the workpiece table 1, collecting The parameter information of the workpiece material 2; the processor 6 is connected with the sensor 5, receives and processes the parameter information collected by the sensor 5, and obtains the spot size of the laser 301 required by the workpiece material 2; the controller 7 is connected with the sensor 5 connected to the processor 6, receiving information from the processor 6 to control the optical system 4. The parameter information of the workpiece material 2 is collected in real time by the sensor 5, and the required spot size is calculated by the processor 6, and the laser pulse energy density is adjusted in real time by controlling the optical system 4 by the controller 7 to change the size of the laser spot 4, and the real-time performance is good. High cutting efficiency; during the cutting process, the laser 3 always outputs at the rated laser power to maximize the use of laser energy for cutting, and is not limited by the laser pulse width, which has wide applicability and greatly improves the utilization rate of laser energy.
虽然说明书中对本发明的实施方式进行了说明,但这些实施方式只是作为提示,不应限定本发明的保护范围。在不脱离本发明宗旨的范围内进行各种省略、置换和变更均应包含在本发明的保护范围内。Although the embodiments of the present invention have been described in the specification, these embodiments are only used as hints and should not limit the protection scope of the present invention. Various omissions, substitutions and changes within the scope not departing from the gist of the present invention shall be included in the protection scope of the present invention.
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Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107378232B (en) * | 2017-07-14 | 2019-03-15 | 中国科学院微电子研究所 | Method and system for processing wafer by laser |
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CN114378436B (en) * | 2022-03-25 | 2022-08-05 | 武汉锐科光纤激光技术股份有限公司 | Material welding method, device, storage medium and electronic device |
CN117123938B (en) * | 2023-10-12 | 2024-01-12 | 武汉金运激光股份有限公司 | Power compensation method and system for laser cutting film |
CN118527850B (en) * | 2024-06-27 | 2024-10-22 | 胜代机械(山东)有限公司 | High-precision cutting system |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1966197A (en) * | 2005-11-18 | 2007-05-23 | 鸿富锦精密工业(深圳)有限公司 | Laser processing system and method |
CN102057480A (en) * | 2008-04-30 | 2011-05-11 | 伊雷克托科学工业股份有限公司 | Dicing a semiconductor wafer |
CN103153522A (en) * | 2011-07-28 | 2013-06-12 | 三菱电机株式会社 | Laser machining device and laser machining control device |
CN103878495A (en) * | 2014-04-02 | 2014-06-25 | 温州大学 | Method and device for precisely machining deep groove and deep hole by varifocal lasers |
CN105108358A (en) * | 2015-09-15 | 2015-12-02 | 南京理工大学 | Real-time detection and control device and method for slit width image of carbon dioxide laser cut die plate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004188422A (en) * | 2002-12-06 | 2004-07-08 | Hamamatsu Photonics Kk | Device and method for machining laser beam |
CN100491048C (en) * | 2007-05-24 | 2009-05-27 | 上海交通大学 | Spectroscopic laser texture modulation device |
CN104362502B (en) * | 2014-11-14 | 2017-10-10 | 上海交通大学 | A kind of high power activation speculum of zero thermal lensing effect |
-
2015
- 2015-12-30 CN CN201511021911.3A patent/CN106938370B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1966197A (en) * | 2005-11-18 | 2007-05-23 | 鸿富锦精密工业(深圳)有限公司 | Laser processing system and method |
CN102057480A (en) * | 2008-04-30 | 2011-05-11 | 伊雷克托科学工业股份有限公司 | Dicing a semiconductor wafer |
CN103153522A (en) * | 2011-07-28 | 2013-06-12 | 三菱电机株式会社 | Laser machining device and laser machining control device |
CN103878495A (en) * | 2014-04-02 | 2014-06-25 | 温州大学 | Method and device for precisely machining deep groove and deep hole by varifocal lasers |
CN105108358A (en) * | 2015-09-15 | 2015-12-02 | 南京理工大学 | Real-time detection and control device and method for slit width image of carbon dioxide laser cut die plate |
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