CN106935467B - A kind of inductively coupled plasma processor - Google Patents
A kind of inductively coupled plasma processor Download PDFInfo
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- CN106935467B CN106935467B CN201511012707.5A CN201511012707A CN106935467B CN 106935467 B CN106935467 B CN 106935467B CN 201511012707 A CN201511012707 A CN 201511012707A CN 106935467 B CN106935467 B CN 106935467B
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- gas
- air inlet
- inductively coupled
- coupled plasma
- transparent air
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- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims description 56
- 238000009792 diffusion process Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 239000011797 cavity material Substances 0.000 claims 5
- 238000001514 detection method Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 23
- 238000010586 diagram Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000003516 pericardium Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A kind of optical detection system for inductively coupled plasma processor, optical detection system is integrated into the gas tip of reaction chamber top insulator material window center by the present invention, while ensureing that gas is uniformly distributed, moreover it is possible to etching data of the detection positioned at central area.It ensure that transparent air inlet piece can be run steadily in the long term by the methods of recessed openings, lower layer's plated film, inclined transparent air inlet piece can reduce interference of the reflected light of transparent air inlet on piece generation to optical detection system, ensure the accurate of measurement data.
Description
Technical field
The present invention relates to the gases in technical field of manufacturing semiconductors more particularly to a kind of inductively coupled plasma processor
Nozzle.
Background technology
Plasma processor is widely used in semi-conductor industry, is used for carrying out high-precision processing to pending substrate
Such as plasma etching, chemical vapor deposition（CVD）Deng.Wherein inductively coupled plasma processor（ICP）Because it can obtain height
The plasma of concentration and be widely used in silicon etching field.Traditional inductively coupled plasma processor is as shown in Figure 1, include
One reaction chamber 100, the interior lower section of reaction chamber 100 includes pedestal 120, and the electrode in pedestal passes through adaptation 50 and radio-frequency power supply 40
It is connected.Include electrostatic chuck 121 on pedestal, pending substrate 122 is fixed on electrostatic chuck 121, and edge ring 105 is around quiet
Electric chuck and substrate to the adjusting of substrate edge region electric field, air-flow or temperature by improving edge treated effect.Reaction chamber
Top includes an insulating materials window 30, and 30 top of insulating materials window includes inductance coil 70, and inductance coil passes through adaptation 80
It is connected to high frequency RF power source 60.The electromagnetic field that inductance coil generates, which is admitted in reaction chamber, forms plasma.In insulation windows
Pericardium includes the different zones into reaction chamber of gas tip 90 and uniformly sprays into reaction gas, and gas tip 90 passes through at least one
A valve is connected to external reaction gas source 110.It is needed during plasma etching real-time using the method for optical interference
Monitoring lower section etching progress and plasma distribution state.But since reaction chamber middle is occupied by gas tip, optic probe
114 can only be arranged in side, although can also obtain optical data, cannot achieve the monitoring to central area still can cause
The generation of problem.Since etch rate is unevenly distributed in substrate surface, thus when probe 114 by optical signal transfer to signal at
Reason device 112 and when judging that the material layer of target thickness has completed etching, central area may carve excessive, phase therewith already
Counter is also likely to be not etched also.
So needing a kind of new optical detecting gear in the industry, the optical signalling in substrate center region and acquisition can be detected
The etching speed parameter in substrate center region.
Invention content
Problems solved by the invention is that optical detecting gear is integrated into positioned at anti-in inductively coupled plasma processor
On the gas tip for answering top of chamber center, the present invention provides a kind of inductively coupled plasma processors, including：One reaction cavity
Around composition airtight space, reaction cavity includes：Reaction cavity side wall and the pedestal in reaction cavity, pedestal top
Include an insulating materials window, inductance coil at the top of reaction cavity including being fixed with electrostatic chuck for fixing pending substrate
It is arranged above insulating materials window, a gas tip is arranged in insulating materials window lower surface central area, into reaction chamber
Even penetrating reaction gas, it is characterised in that the gas tip includes gas diffusion chamber and positioned at the top of gas diffusion top of chamber
Lid, includes a reaction gas air inlet and an optical emitting and reception device on the head cover,
The gas diffusion chamber side wall and bottom surface include multiple gas passages, and gas diffusion bottom of chamber face further includes one upward
The opening of recess, overthe openings include a transparent air inlet piece, and transparent air inlet on piece includes an at least gas passage, and the gas expands
The gas for dissipating intracavitary sprays into downwards reaction chamber by the gas passage of the transparent air inlet on piece.Wherein dress occurs and receives for optics
It sets the light sent out and reaches down to substrate across the transparent air inlet piece.Gas diffusion chamber can be by opaque oxidation aluminum
At the transparent air inlet piece silica is made.
Wherein the width of gas passage is less than 5mm, to prevent plasma from entering in gas diffusion chamber.
Transparent air inlet piece is obliquely installed is more than 2 degree less than 10 degree, to reduce in transparent air inlet on piece with the angle of horizontal plane
It is reflected into the light of optical emitting and reception device.
Transparent air inlet piece lower surface is covered with one layer of resistant to plasma corrosion material layer, the resistant to plasma corrosion material thickness
Degree is less than 50um, to increase the corrosion resistance of transparent air inlet piece, moreover it is possible to which enough light can pass through.
The opening depth being recessed upwards is more than 5mm, preferably selects and is more than 10mm, to ensure that only a small amount of plasma energy expands
It is scattered to the lower surface up to transparent air inlet piece, reduces corrosion.
The opening width being recessed upwards is more than 7mm, to ensure that the light of optical emitting and reception device can irradiate
To enough areas.
Description of the drawings
Fig. 1 is prior art plasma processor schematic diagram；
Fig. 2 is the present invention plus gas tip structure schematic diagram.
Specific implementation mode
It is illustrated in figure 2 gas tip schematic diagram of the present invention, the present invention is specific similar compared with the prior art shown in FIG. 1
As reaction cavity basic structure, the main distinction is filling 114 and set to be integrated into prior art optical detection and being located at for the present invention
In the gas tip 90 ' of insulating materials window center.Gas tip 90 ' of the present invention includes gas diffusion chamber 91, on gas diffusion chamber
Side includes head cover 92, includes a through-hole at the top of head cover, optical emitting and reception device 93, while head cover 92 are provided in through-hole
Side wall further includes an admission line 94, and reaction gas flows into head cover and lower section diffusion chamber 91 by admission line 94.Gas expands
Dissipate 91 side wall of chamber and bottom surface include it is multiple run through gas passage 96, by multiple gas passages by the reaction in gas diffusion chamber 91
Gas is uniformly spurted into plasm reaction cavity.Due to being all plasma around and under gas tip 90 ', it is passed through
Reaction gas in gas diffusion chamber 91 is also easy to be ignited, in the diffusion chamber for the plasma meeting etchant gas nozzle lighted
Wall, while decomposition product can also be deposited on inner wall and bottom blocking channel 96.Plasma diffusion is into gas diffusion in order to prevent
The bore of chamber, all gas passages 96 needs to be less than 5mm, and such charged particle can be collided in crossing process neutralizing canal side wall
And extinguish.Gas tip needs the material such as aluminium oxide using resistant to plasma corrosion simultaneously, and surface can also be coated more resistant to corrosion
The material layers such as yttrium oxide, to improve the service life of gas tip.Such gas diffusion chamber side wall and bottom are impermeable
Bright cannot achieve penetrating for optical signal.Through-hole of multiple bores less than 5mm is opened up on opaque material can not penetrate enough
Light（Light transmittance is less than 20%）, so being not used to the etching speed detection of the present invention.The present invention is set in diffusion chamber bottom centre
It sets there are one the opening being recessed upwards, open top includes that transparent air inlet piece 95, air inlet piece made of a piece of transparent material are relatively thin
Thickness only has（1-4mm）, can be made of the high material of the light transmittances such as silica.It is logical that air inlet on piece offers multiple air inlets simultaneously
Hole, similar with the channel 96 opened up on gas diffusion chamber, for reaction gas to be sprayed into reaction chamber, but bore is smaller, and
Less than 5mm.Air inlet piece 95 of the present invention select high transparency material can synchronous belt carry out defect, the materials such as silica not resistant to plasma
When corrosion, especially reaction gas meeting fluorochemical；In order to ensure that the transparent air inlet piece of transparency 95 can not be too thick.The present invention
Opening upwards recess can reduce Plasma contact and corrode the chance of transparent air inlet piece, and a large amount of plasmas can diffuse up
Extinguish in the process, and part can collide with the side wall on recessed openings both sides and extinguish.So the cup depth of opening upwards is preferable
Need be more than 5mm, it is best to need to be more than 10mm.The bore of the horizontal direction of open depression needs to be more than 7mm less than 25mm
Corrode transparent air inlet piece 95 to ensure optical detection range and prevent plasma from diffusing up.Simultaneously because inductive coupling etc.
The design feature of plasma reactor determines that the distribution of plasma is：Concentration low peripheral region concentration in central area is high, this
Transparent air inlet piece 95 is arranged in the lower section of air inlet spray head 90 ' of central area by invention, be inherently located at plasma concentration compared with
Low region, so being not easy to be corroded.It, can will be into order to further increase the reliability and service life of transparent air inlet piece 95
Gas piece 95 is divided into the substrate 95a made of the transparent materials such as silica of top, and the thin layer formed below 95a
Resistant to plasma material layer 95b, 95b material layer thickness it is best need to be less than 50um to ensure transparency.Resistant to plasma material
Bed of material 95b can be by spraying or chemical vapor deposition（CVD）Or physical vapour deposition (PVD)（PVD）Etc. modes in substrate
Resistant to plasma corrosion thin layer is formed on 95a.Since 95b material layers are very thin so will not be made to the whole light transmittance of air inlet piece 95
At seriously affecting, optical measurement function of the present invention can be realized effectively.95b material layers can be the materials such as yttrium oxide or aluminium oxide
Made of material, belong to common materials in the industry, details are not described herein.
Optical emitting and reception device 93 emit reference light vertically downward in the present invention, sequentially pass through under transparent air inlet piece 95
The plasma of side reaches pending 122 upper surface of substrate.During plasma etching, pending substrate upper surface etches shape
At figure change in size can occur, so phase change can also occur for the reflected light on surface.The part reference light reflected upwards
Into after optical emitting and reception device 93, by the processing of signal processor, the reference light of transmitting and reflection is compared into energy
Detect the etching depth of underlying substrate.But in addition to underlying substrate 112 can reflect, the upper and lower surface of transparent air inlet piece 95
The optics that a large amount of light that can be reflected, and reflect also are to revert to top occurs to work as interference with reception device 93, formation interference
Optical system can be caused to fail when the intensity of light and the close or even stronger intensity of underlying substrate reflected light.Thus in the present invention
Transparent air inlet piece 95 can be it is inclined be arranged in recessed openings, inclined angle is not very big, can be and level side
It is more than 2 degree to angle and is less than 10 degree, had both can guarantee the reflected light back of air inlet on piece to the inner wall of gas diffusion chamber 91, warp in this way
The overwhelming majority that will not be repeatedly formed after refraction in the reference light that also can guarantee top incidence compared with strong jamming light can pass through transparent
Air inlet piece reaches underlying substrate.
Optical detection system is integrated into gas tip 90 ' by the present invention, while ensureing that gas is uniformly distributed, moreover it is possible to
Etching data of the detection positioned at central area.It ensure that transparent air inlet piece can be grown by the methods of recessed openings, lower layer's plated film
Phase stable operation, inclined transparent air inlet piece can reduce the reflected light that transparent air inlet on piece generates and be done to optical detection system
It disturbs, ensures the accurate of measurement data.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (8)
1. a kind of inductively coupled plasma processor, including：
One reaction cavity, which surrounds, constitutes airtight space, and reaction cavity includes：Reaction cavity side wall and in reaction cavity
One pedestal, pedestal top include being fixed with electrostatic chuck for fixing pending substrate, are insulated including one at the top of reaction cavity
Material window, inductance coil are arranged above insulating materials window, and a gas tip is arranged in insulating materials window lower surface center
Domain uniformly sprays into reaction gas into reaction chamber,
It is characterized in that the gas tip includes gas diffusion chamber and the head cover positioned at gas diffusion top of chamber, on the head cover
Including a reaction gas air inlet and an optical emitting and reception device,
The gas diffusion chamber side wall and bottom surface include multiple gas passages, and gas diffusion bottom of chamber face further includes a recess upwards
Opening, overthe openings include a transparent air inlet piece, and the transparent air inlet piece lower surface is covered with one layer of resistant to plasma corrosion material
The bed of material, the resistant to plasma corrosion material layer thickness are less than 50um；Transparent air inlet on piece includes an at least gas passage, the gas
Gas in body diffusion chamber sprays into downwards reaction chamber by the gas passage of the transparent air inlet on piece.
2. inductively coupled plasma processor as described in claim 1, which is characterized in that the optical emitting and reception device
The light sent out reaches down to substrate across the transparent air inlet piece.
3. inductively coupled plasma processor as described in claim 1, which is characterized in that the width of the gas passage is less than
5mm。
4. inductively coupled plasma processor as described in claim 1, which is characterized in that the transparent air inlet piece is obliquely installed
It is more than 2 degree with the angle of horizontal plane and is less than 10 degree.
5. inductively coupled plasma processor as described in claim 1, which is characterized in that the gas diffusion chamber is by opaque
Aluminium oxide be made, the transparent air inlet piece silica is made.
6. inductively coupled plasma processor as described in claim 1, which is characterized in that the opening depth being recessed upwards
More than 5mm.
7. inductively coupled plasma processor as claimed in claim 6, which is characterized in that the opening depth being recessed upwards
More than 10mm.
8. inductively coupled plasma processor as described in claim 1, which is characterized in that the opening width being recessed upwards
More than 7mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012707.5A CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
| TW105135252A TWI618140B (en) | 2015-12-31 | 2016-10-31 | Inductively coupled plasma processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012707.5A CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
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| Publication Number | Publication Date |
|---|---|
| CN106935467A CN106935467A (en) | 2017-07-07 |
| CN106935467B true CN106935467B (en) | 2018-11-06 |
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| CN201511012707.5A Active CN106935467B (en) | 2015-12-31 | 2015-12-31 | A kind of inductively coupled plasma processor |
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| CN (1) | CN106935467B (en) |
| TW (1) | TWI618140B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109148316A (en) * | 2018-09-07 | 2019-01-04 | 北京智芯微电子科技有限公司 | For accurately determining the monitoring method of plasma etching machine etching chip terminal |
| CN113130285B (en) * | 2019-12-31 | 2022-04-15 | 江苏鲁汶仪器有限公司 | Ceramic air inlet and radio frequency cleaning device |
| CN113707524B (en) * | 2020-05-20 | 2022-06-10 | 江苏鲁汶仪器有限公司 | Prevent palirrhea air intake structure of plasma |
| CN116453925B (en) * | 2023-06-16 | 2023-08-25 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
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|---|---|---|---|---|
| US6758941B1 (en) * | 1999-06-02 | 2004-07-06 | Tokyo Electron Limited | Plasma processing unit, window member for plasma processing unit and electrode plate for plasma processing unit |
| CN101243535A (en) * | 2005-08-18 | 2008-08-13 | 奥立孔美国公司 | Optical emission interferometry for PECVD using a gas injection hole |
| CN101585019A (en) * | 2008-05-19 | 2009-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of semiconductor processing and the nozzle arrangements that is used for this device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129807A (en) * | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
| US8009938B2 (en) * | 2008-02-29 | 2011-08-30 | Applied Materials, Inc. | Advanced process sensing and control using near infrared spectral reflectometry |
| JP5385875B2 (en) * | 2010-08-26 | 2014-01-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and optical monitor apparatus |
| US9162236B2 (en) * | 2012-04-26 | 2015-10-20 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
| US20150118832A1 (en) * | 2013-10-24 | 2015-04-30 | Applied Materials, Inc. | Methods for patterning a hardmask layer for an ion implantation process |
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2015
- 2015-12-31 CN CN201511012707.5A patent/CN106935467B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6758941B1 (en) * | 1999-06-02 | 2004-07-06 | Tokyo Electron Limited | Plasma processing unit, window member for plasma processing unit and electrode plate for plasma processing unit |
| CN101243535A (en) * | 2005-08-18 | 2008-08-13 | 奥立孔美国公司 | Optical emission interferometry for PECVD using a gas injection hole |
| CN101585019A (en) * | 2008-05-19 | 2009-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of semiconductor processing and the nozzle arrangements that is used for this device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201724258A (en) | 2017-07-01 |
| CN106935467A (en) | 2017-07-07 |
| TWI618140B (en) | 2018-03-11 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |